Method and apparatus for filling a gap

The present disclosure relates generally to methods and devices for manufacturing electronic devices.

More specifically, the present invention provides one or more gaps formed during the production of a feature on a substrate by providing the substrate in a reaction chamber and by providing a method of deposition. With respect to methods and equipment for filling, the method is to introduce the first reactant into the substrate in the first dose amount, thereby over the first region of the surface of one or more gaps. To form and introduce a single layer of about one layer or less with the first reactant and to introduce the second reactant into the substrate in a second dose amount, thereby one or more. Forming and introducing a monolayer of about one layer or less on the second region of the surface of the gap, and allowing the first and second reactants to react. include.

While manufacturing integrated circuits on the substrate, gaps, such as trenches, can be formed on the substrate. Filling the trench can take various forms depending on the particular application.

The basic trench filling process has the drawback of including the formation of voids in the trench during refilling. If the refill material forms a shrinkage near the top of the trench before the refill material is fully filled, voids can form. Such voids can compromise the device insulation separation of the device on the integrated circuit (IC) and the overall structural integrity of the IC. Unfortunately, preventing the formation of voids during trench filling can often constrain the size of the trench, which can limit the device filling density of the device.

When the trench is filled for device insulation isolation, an important parameter in measuring the effectiveness of device insulation isolation is the field threshold voltage, the voltage required to generate the parasitic current connecting adjacent insulating devices. There can be. The field threshold voltage can be affected by many physical and material properties such as trench width, trench filling material dielectric constant, substrate doping, field implant dose, and substrate bias.

Void formation can be reduced by reducing the depth of the trench and / or by inclining the sidewalls of the trench so that the opening is wider at the top than at the bottom. The trade-off in reducing the depth of the trench can reduce the effectiveness of device isolation separation, while the larger upper opening of the trench with the sloping sidewalls of other integrated circuits. The area may be exhausted.

For example, it is an object of the present invention to provide an improved or at least an alternative gap filling method.

Accordingly, by providing the substrate in the reaction chamber and by providing a deposition method, a method for filling one or more gaps formed during the production of the feature on the substrate is provided. The deposition method is to introduce the first reactant into the substrate in the first dose amount, thereby the first reactant on the first region of the surface of one or more gaps. Forming and introducing a single layer of about one layer or less and introducing a second reactant into the substrate in a second dose amount, thereby forming a second on the surface of one or more gaps. A single layer of about one layer or less is formed on the region of the first and second reactants, and the first and second regions overlap in the overlapping region with which the first and second reactants react. Retaining and introducing an initial unreacted region in which the regions of the above do not overlap, and introducing a third reactant into the substrate in a third dose amount, wherein the third reactant is said. It comprises introducing, reacting with the first or second reactant remaining on the initial unreacted region.

By dosing the first and second reactants so that the reactants overlap in the overlapping region at the top of the gap, the first and second reactants react at the top of the gap and at the top of the gap. Prevent further reactions. In the initial unreacted region at the bottom of the gap where the first and second reactants do not overlap, the reactants can further react with the third reactant, thereby filling the gap upward from the bottom.

In a further embodiment, for example, a semiconductor processing apparatus is provided to provide an improved or at least an alternative gap filling method. The device gas-communicate with one or more reaction chambers for accommodating the substrate with the gap formed during the production of the feature on the substrate and one of the reaction chambers via the first valve. A first source for the first reactant and a second source for the second reactant that is gas-permeable to one of the reaction chambers through the second valve. The device operates on the first, second, and third gas valves, with a third source for the third reactants gas communicating with one of the reaction chambers through the third valve. It is possible to connect and introduce the first reactant to the substrate in the first dose amount, thereby the first reaction on the first region of the surface of one or more gaps. Forming and introducing a single layer of about one or less layers with the material and introducing the second reactant into the substrate in a second dose amount, thereby forming one or more gap surfaces. A single layer of about one layer or less is formed on the second region by the second reactant, and the first and second regions are overlapped in the overlapping region where the first and second reactants react, and the first and second regions are overlapped. The introduction of leaving the initial unreacted region where the second region does not overlap and the introduction of the third reactant into the substrate in the third dose amount, the third reactant is the initial It comprises a control device configured and programmed to control the introduction and reaction of the first or second reactants remaining on the unreacted region.

In order to summarize the invention and its advantages achieved beyond the prior art, certain objectives and advantages of the invention have been described above herein. Of course, it should be understood that all such objectives or advantages do not necessarily have to be achieved in accordance with any particular embodiment of the invention.

Thus, for example, as taught or suggested herein, not necessarily other purposes or advantages that may be taught or suggested herein, in a form that achieves or optimizes one advantage or group of benefits. Those skilled in the art will recognize that the invention may be embodied or practiced without being achieved.

All of these embodiments are intended to be within the scope of the invention disclosed herein. To those skilled in the art, these and other embodiments will be readily apparent from the embodiments for carrying out the invention of some of the following embodiments with reference to the accompanying drawings, and the invention is disclosed. Not limited to all specific embodiments.

These and other features, embodiments, and advantages of the invention disclosed herein are described below with reference to the drawings of some embodiments and are intended to be exemplified. It is not limited.

<figref num="1">FIG. 1A is a schematic diagram of a PEALD (Plasma Enhanced Atomic Layer Deposition) device for filling gaps that can be used in one embodiment of the invention.</figref>

FIG. 1B illustrates a schematic diagram of a precursor feeding system using a flow path system (FPS) that can be used in embodiments of the present invention.

<figref num="2">It is a flowchart of the method for filling a gap by 1st Embodiment.</figref>

<figref num="3">It is a flowchart of the method for filling a gap by a second embodiment.</figref>

Although some embodiments and examples are disclosed below, the invention extends beyond the embodiments and / or uses of the invention specifically disclosed, as well as their apparent modifications and equivalents. It will be understood by those skilled in the art. Therefore, it is intended that the scope of the disclosed invention should not be limited by the embodiments described and specifically disclosed below.

FIG. 2 is a flow chart of the method according to at least the first embodiment of the present invention, in which one or more gaps formed during the manufacture of a feature on a substrate can be filled by the deposition method 100. The gap can be 40, or even less than 20 nm wide. The gap can be 40, 100, 200, or even deeper than 400 nm.

A substrate can be provided and a deposition method 100 can be provided, wherein the deposition method 100 is to introduce the first reactant into the substrate in a first dose amount in step 110. Thereby forming and introducing a monolayer of about one layer or less with the first reactant on the first region of the surface of one or more gaps, and in step 120, the second reactant. Is to be introduced into the substrate in a dose amount of, thereby forming a monolayer of about one layer or less with the second reactant on the second region of the surface of one or more gaps, the first and more than one. The second region overlaps in the overlapping region where the first and second reactants react, leaving an initial unreacted region where the first and second regions do not overlap, and in step 130, the first Introducing the third reactant into the substrate in a third dose amount, wherein the third reactant reacts with the first or second reactant remaining on the initial unreacted region. Including that.

By dosing the first and second reactants so that the reactants overlap at the top of the gap, the first and second reactants react at the top, preventing further reactions at the top of the gap. Can be. At the bottom of the gap where the first and second reactants do not overlap, the reactants can further react with the third reactants that fill the bottom of the gap.

One dose of the first and second reactants must be saturated (eg, relatively high and / or long) so that one of the first and second reactants covers the entire gap. On the other hand, to ensure that the first and second reactants overlap only at the top of the gap, the other dose of the first and second reactants (eg, relatively short and) / Or low) Must be subsaturated.

After introducing the first, second and / or third reactants, excess reactants and by-products can be removed to avoid direct reactions between reactants that cause contamination.

The deposition method 100 may be repeated multiple times to fill the gap, as indicated by loop 140. The reaction may be repeated 1 to 10,000 times, preferably 5 to 2,000 times, most preferably 10 to 1,000 times via the loop 140.

For example, if the top of the gap is still blocked, the deposition method 100 may be partially repeated via the loop 150, further providing reactants for the reaction at the bottom. A combination of full iterations via loop 140 and partial iterations via loop 150 may also be used. In this way, the speed of the gap filling method can be increased.

One of the first and second reactants is introduced in a saturated state (eg, relatively large or long dose) and the other of the first and second reactants is subsaturated (eg, relatively). Introduced in small doses or short doses). Reactants fed in a saturated doze penetrate deep into the gap and reach the bottom of the gap, while reactants fed in a subsaturated dose do not penetrate deep into the gap and reach the top. stay. Thus, the reaction between the first reactant and the second reactant can occur only at the top of the gap and prevent further reactions at the top of the gap.

One of the first and second reactants may be a potential growth reactant, while the other of the first and second reactants is relatively combined with the potential growth reactant. It may contain a low growth reactant that results in low growth. Therefore, the reaction between the first reactant and the second reactant is relatively low at the top of the gap so that the top of the gap is not blocked before the bottom of the gap is substantially filled. Can bring about growth.

It is possible to introduce one of the first and second reactants to cover the corresponding one of the first and second regions that substantially covers the entire surface of one or more gaps. can. One of the first and second reactants can be a potential growth reactant that depends on the other reactant to cause potential growth.

One of the first and second reactants, which are potential growth reactants, may include silicon. For example, the potential growth reactant is sold by Air Liquide (Paris, France) under the name of silanediamine, eg N, N, N', N'-tetraethylsilanediamine, eg ALOHA SAM.24. , May be included.

Substantially low growth reactants may include nitrogen, which may be activated by plasma if desired. Nitrogen in combination with potential growth reactants such as silanediamines such as N, N, N', N'-tetraethylsilanediamines can result in relatively low growth at the top of the gap. It may be advantageous to provide a substantially low growth reactant prior to providing the potential growth reactant.

The third reactant can include a high growth reactant that, in combination with a potential growth reactant, results in relatively high growth. To ensure that the third reactant reaches the bottom of the gap, a third reactant is introduced at a relatively high dose and the third reactant is a potential growth reaction at the bottom of the gap. Can react with things. Since the first and second reactants may already be reacting at the top of the gap, the reaction at the top of the trench with the third reactant is blocked.

The third reactant may include oxygen that can be activated by the plasma. Oxygen in combination with silanediamines, such as N, N, N', N'-tetraethylsilanediamines, can result in relatively high growth at the bottom of the gap.

For example, N, N, N', N'-tetraethylsilanediamine, N plasma, and O plasma may be supplied in a periodic iterative reaction to fill the bottom of the gap. Alternatively, N plasma, N, N, N', N'-tetraethylsilanediamine, and O plasma may be supplied in a periodic iterative reaction to fill the bottom of the gap.

FIG. 3 is a flow chart of method 200 according to at least the second embodiment of the present invention, in which before the third reactant, between the introduction of the second reactant and the introduction of the third reactant, It may be beneficial to reintroduce one of the first and second reactants into the substrate.

The substrate can be provided in the reaction chamber and the deposition method 200 can be provided, wherein the deposition method 200 introduces the first reactant into the substrate in the first dose amount in step 210. And thereby forming and introducing a monolayer of about one layer or less with the first reactant on the first region of the surface of one or more gaps, and the second reaction in step 220. Introducing the material into the substrate in a second dose amount, thereby forming a monolayer of about one layer or less with the second reactant on the second region of the surface of one or more gaps. Introducing and reintroducing the first reactant in step 230 into the substrate again in the first dose amount, thereby onto the first region of the surface of one or more gaps. The first reactant forms a monolayer of about one layer or less, the first and second regions overlap in the overlapping regions where the first and second reactants react, and the first and second regions overlap. The initial unreacted region that does not match is left and introduced, and in step 240, the third reactant is introduced into the substrate in the third dose amount, and the third reactant is the initial unreacted substance. Includes introducing, reacting with the first or second reactants remaining on the region.

For example, N, N, N', N'-tetraethylsilanediamine, N plasma, O plasma, and N plasma may be supplied in a periodic iterative reaction to fill the bottom of the gap. The reaction may be repeated 1 to 10,000 times, preferably 5 to 2,000 times, most preferably 10 to 1,000 times. By performing the nitrogen plasma step twice in this sequence, it is more certain that the upper reactants react and are inactivated before the third reactant O plasma is supplied.

The third reactant may include ozone and / or hydrogen peroxide which can result in high growth in combination with silanediamines such as N, N, N', N'-tetraethylsilanediamine. Ozone and / or hydrogen peroxide do not need to be activated by the plasma to react with silanediamine to result in relatively high growth, which is beneficial as the energy of the plasma can be lower deep in the gap. Is.

Potential growth reactants may include organometallics such as organoaluminum, such as trimethylaluminum (TMA).

Potential growth reactants may include organometallics such as organoaluminum, such as trimethylaluminum (TMA), and substantially low growth reactants may include ozone. Combined with trimethylaluminum, ozone can result in low growth at the top of the gap.

The third reactant may contain hydrogen peroxide and can be combined with trimethylaluminum to result in high growth at the bottom of the gap.

The third reactant may contain hydrazine and can be combined with trimethylaluminum to result in high growth at the bottom of the gap.

The third reactant may contain water and can be combined with trimethylaluminum to result in high growth at the bottom of the gap.

The method can be carried out within a semiconductor process apparatus, wherein the apparatus comprises one or more reaction chambers for accommodating a substrate having a gap formed during the production of a feature on the substrate. A first source for the first reactant that is gas-transmitted to one of the reaction chambers through the first valve, and a gas-communication with one of the reaction chambers through the second valve. The device comprises a second source for the second reactant and a third source for the third reactant that is gas-communicating with one of the reaction chambers via the third valve. And operably connected to the first, second, and third gas valves, and the first reactant is introduced into the substrate in the first dose amount, thereby one or more. Forming and introducing a single layer of about one layer or less with the first reactant on the first region of the surface of the gap and introducing the second reactant into the substrate with a second dose amount. Thus, a monolayer of about one layer or less is formed on the second region of the surface of one or more gaps by the second reactant, and the first and second regions are the first and second regions. Introducing, leaving an initial unreacted region where the second reactants overlap in the overlapping regions where they react and the first and second regions do not overlap, and the third reactants are applied to the substrate in a third dose amount. Introducing, the third reactant is configured and programmed to control the introduction, which reacts with the first or second reactant remaining on the initial unreacted region. , With a control device.

If desired, the apparatus can be equipped with a heater for activating the reaction by raising the temperature of one or more of the substrate, the first, second, and third reactants. .. Illustrative single-wafer reactors specifically designed to carry out the ALD process are from ASM International NV (Almere, The Netherlands) to Pulsar®, Emerald®, Dragon® and Eagle®. It is marketed under the trade name of (trademark). Exemplary batch ALD reactors specifically designed to carry out the ALD process are also commercially available from ASM International NV under the trade names A400 and A412 .

If desired, the device may be configured to generate a plasma of a first, second, or third reactant and may include a radio frequency source operably connected to a controlled device in place. .. Plasma-enhanced atomic layer deposition PEALD can be performed in an Eagle® XP8 PEALD reactor available from ASM International NV, Almere, the Netherlands, which activates one or more reactants. Equipped with a plasma source for

A process cycle using plasma can be carried out using, for example, the apparatus illustrated in FIG. 1A. FIG. 1A is a schematic representation of a PEALD device, preferably integrated with a control device programmed to perform the sequences described herein, which can be used in some embodiments of the invention. In this figure, a pair of conductive plate electrodes 4 and 2 are provided in parallel to each other in the internal 11 (reaction region) of the reaction chamber 3, and HRF power (13.56 MHz or 27 MHz) 20 is applied to one side. By electrically grounding the other side 12, the plasma is excited between the electrodes.

A temperature controller is provided on the lower stage 2 (lower electrode), and the temperature of the base material 1 arranged on the temperature controller is kept constant at a predetermined temperature. The upper electrode 4 also functions as a shower plate, and the reactant gas (and noble gas) and the precursor gas are introduced into the reaction chamber 3 through the gas line 21 and the gas line 22, respectively, and through the shower plate 4. ..

Further, a circular duct 13 having an exhaust line 7 is provided in the reaction chamber 3, and the gas in the inside 11 of the reaction chamber 3 is exhausted through the duct 13. Further, in the transfer chamber 5 arranged below the reaction chamber 3, a seal gas line 24 for introducing the seal gas into the inside 11 of the reaction chamber 3 via the inside 16 (transfer area) of the transfer chamber 5 is provided. It is provided. A separation plate 14 is provided to separate the reaction area from the transfer area (the gate valve that passes through to carry the wafer into and out of the transfer chamber 5 is omitted from this figure). The transport chamber is also provided with an exhaust line 6. In some embodiments, the deposition and surface treatment of the multi-element membrane is performed in the same reaction space, so that all steps can be performed continuously without exposing the substrate to air or other oxygen-containing atmospheres. can. In some embodiments, a remote plasma device can be used to excite the gas.

In some embodiments, in the apparatus shown in FIG. 1A, a system that switches between the flow of the inert gas and the flow of the precursor gas illustrated in FIG. 1B (described above) is used to substantially reduce the pressure in the reaction chamber. The precursor gas can be introduced in pulses without variation.

In some embodiments, dual chamber reactors (two areas or compartments for processing wafers placed in close proximity to each other) can be used, with reactant gas and noble gas via a shared line. Whereas it can be supplied, the precursor gas is supplied via a non-shared line.

One of ordinary skill in the art will appreciate one or more controllers in which the device is programmed or otherwise configured to perform the deposition and reactor cleaning processes described elsewhere herein. You will understand that it has (not shown). As will be appreciated by those of skill in the art, the control device communicates with various power sources, heating systems, pumps, robots, and valves of gas flow control devices or reactors.

The configurations and / or methods described herein are exemplary in nature and these particular embodiments or examples should be considered in a limited sense as they are capable of many modifications. Please understand that it is not. The specific routines or methods described herein can represent one or more of any number of processing methods. Therefore, the various operations exemplified may be performed in other sequences in the sequence exemplified, and may be omitted in some cases.

The subject matter of this disclosure is all new and non-trivial combinations and partial combinations of the various processes, systems and configurations disclosed herein, as well as other features, functions, behaviors and / or characteristics, and the like thereof. Includes any and all equivalents.