JP2017191338A

Semiconductor device

Abstract

Problem to be solved.To provide a semiconductor device in which a layer to be peeled is attached to a base material having a curved surface, and a method for manufacturing the same. In particular, an object of the present invention is to provide a display having a curved surface, specifically, a light emitting device having an organic light emitting element attached to a substrate having a curved surface.

Solution.A film to be peeled off including an organic light emitting element provided on a substrate by utilizing the lamination of a first material layer composed of a metal layer or a nitride layer and a second material layer composed of an oxide layer. A display having a curved surface is realized by transferring to and bending the film and the layer to be peeled off. [Selection diagram] Fig. 12

JP2017191338A, drawing sheet 1 — Sheet 1 of 16

Term

Projected expiry 4 July 2037.

1 claim: 1 independent, 0 dependent

1
フィルム上の酸化物層と、前記酸化物層上の素子を含む層と、を有し、前記素子を含む層は、画素部を有し、前記画素部は、トランジスタと、前記トランジスタと電気的に接続された発光素子と、を有し、前記フィルムは、湾曲する機能を有することを特徴とする半導体装置。

34 paragraphs, as filed

0001According to the present invention, a thin film transistor (hereinafter, referred to as a thin film transistor) in which a peeled layer to be peeled is attached to a substrate and transferred It is represented by a semiconductor device having a circuit composed of (called TFT), for example, a liquid crystal module. Electro-optic devices, light emitting devices such as EL modules, and such devices are used as parts. Related to electronic devices mounted on or vehicles equipped with these. In addition, in these manufacturing methods Related.

0002In the present specification, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Electro-optics, light-emitting devices, semiconductor circuits, and electronic devices are all semiconductor devices. is there.

0003In recent years, semiconductor thin films (thickness of several to several hundred nm) formed on a substrate having an insulating surface have been used. The technology for constructing thin film transistors (TFTs) is attracting attention. Thin film transistor Widely applied to electronic devices such as ICs and electro-optical devices, especially switches for image display devices. Development is urgently needed as a device.

0004There are also various display devices for vehicles such as automobiles and aircraft, such as navigation tables. Attempts have been made to install display devices, audio operation screen display devices, and instrument display devices. ..

0005Various applications using such an image display device are expected. In particular, its use in mobile devices is drawing attention. Currently, glass substrates and quartz substrates are often used. However, it has the disadvantage of being fragile and heavy. In addition, for mass production, a glass substrate And quartz substrates are difficult to increase in size and are not suitable. Therefore, a flexible substrate, representative Attempts have been made to form a TFT element on a flexible plastic film. ing.

0006However, due to the low heat resistance of the plastic film, lower the maximum temperature of the process. As a result, it is possible to form a TFT with better electrical characteristics than when it is formed on a glass substrate. The current situation is that there is no such thing. Therefore, high-performance light-emitting elements and liquid crystals using plastic films No display device has been realized.

If an organic light emitting element (OLED:) is placed on a flexible substrate such as a plastic film. Making a light emitting device or a liquid crystal display device on which an Organic Light Emitting Device) is formed. If possible, in addition to being thin and lightweight, a display with a curved surface , Show windows, etc. Therefore, its application is not limited to mobile devices, and its application range is very wide. Moreover, if a display having a curved surface is realized, a limited space, for example, an automobile or an aircraft, can be realized. When trying to install images and instrument displays in the driver's seat of a vehicle such as It can be installed on curved surfaces (windows, ceilings, doors, dashboards, etc.) and is a space. Space can be narrowed. Traditionally, the display is flat and the space of the vehicle Cut out the wall to narrow the pace or fit a flat display The work was complicated. The present invention describes a semiconductor device in which a layer to be peeled is attached to a base material having a curved surface, and a method for manufacturing the same. The challenge is to provide. In particular, a display having a curved surface, specifically, having a curved surface A light emitting device having a light emitting element having a layer containing an organic compound attached to a base material as a light emitting layer, or a light emitting device. An object of the present invention is to provide a liquid crystal display device attached to a base material having a curved surface. Further, the present invention relates to a flexible film (a film that can be curved). Various elements typified by TFT (thin film diode, photoelectric consisting of silicon PIN junction) To provide a semiconductor device to which a conversion element or a silicon resistance element is attached and a method for manufacturing the same. Is the issue.

The present invention functions as a channel of an element when forming a layer to be separated containing the element on a substrate. All the channel length directions of the region are arranged in the same direction, and scanning is performed in the same direction as the channel length direction. After irradiating the element with laser light to complete the device, it is different from the channel length direction. It is attached to a base material having a curved surface that is curved in the direction of the channel, that is, the channel width direction, and has a curved surface. It realizes the display. When the layer to be peeled is bonded to a base material having a curved surface In that case, the layer to be peeled off is also bent along the curved surface of the base material. The present invention is an element channel. All the length directions are arranged in the same direction, and the channel length direction and the direction in which the base material is curved Is different, so even if the layer to be peeled off including the element is bent, the effect on the element characteristics is minimized. Can be suppressed to. That is, in the deformation in a certain direction (here, the direction in which the base material is curved) It is also possible to provide a strong semiconductor device. The configuration of the invention relating to the fabrication method disclosed herein forms a layer to be stripped containing an element on a substrate. After the step of forming and the support being adhered to the layer to be peeled containing the element, the support is physically attached from the substrate. The step of peeling by a target means, and the transfer body is adhered to the layer to be peeled including the element, and the support A method for manufacturing a semiconductor device, which comprises a step of sandwiching the element between the transfer body and the transfer body. The element is a thin film semiconductor whose channel is a semiconductor layer that overlaps with the gate electrode with an insulating film in between. The process of forming the semiconductor layer is the same as that of the channel length direction of the channel. A method for manufacturing a semiconductor device, which comprises a process of irradiating a laser beam that scans in a direction. It is a law. However, in the above configuration, if the mechanical strength of the layer to be peeled is sufficient, the layer to be peeled may be used. It is not necessary to bond the transfer members to be fixed. In the above configuration, a plurality of the thin film transistors are provided, and the plurality of thin films are provided. The channel length directions of the transistors are all arranged in the same direction. Further, in the above configuration, the support has a curved surface curved in a convex or concave shape, and the support is described. The support is characterized in that the curved direction and the channel length direction are different. In addition, when the transfer body is attached, the transfer body is also curved in a convex or concave shape along the curved surface of the support. It has a curved surface. Therefore, in the above configuration, the transfer body is curved in a convex or concave shape. It has a curved surface, and the direction in which the support is curved and the direction in which the channel length is curved are different. It is a feature. Further, in the above configuration, when the liquid crystal display device is formed, the support is an opposed substrate. The element has a pixel electrode, and a liquid crystal material is formed between the pixel electrode and the facing substrate. Is characterized in that it is filled. Further, in the above configuration, a light emitting device having a light emitting element having a layer containing an organic compound as a light emitting layer. When forming a device, the support is a sealing material, and the element is a light emitting element. It is said. Further, in the above configuration, the peeling method is not particularly limited, and is between the layer to be peeled and the substrate. Is provided with a separation layer, and the separation layer is removed with a chemical solution (etchant) to separate the layer to be peeled from the substrate. Or separation of amorphous silicon (or polysilicon) between the layer to be peeled and the substrate A layer is provided, passed through the substrate, irradiated with laser light, and hydrogen contained in amorphous silicon is released. By using a method of creating a gap to separate the layer to be peeled from the substrate, etc. Is possible. When peeling using laser light, hydrogen is released before peeling. It is possible to form an element contained in the layer to be peeled off by setting the heat treatment temperature to 410 ° C or less so as not to prevent it. desirable. In addition, as another peeling method, a peeling method in which peeling is performed by utilizing the film stress between the two layers can also be used. Good. In this peeling method, a metal layer provided on the substrate, preferably a metal nitride layer, is provided, and further before. An oxide layer is provided in contact with the metal nitride layer, an element is formed on the oxide layer, and a film forming process or 50 Even if heat treatment is performed at 0 ° C or higher, film peeling does not occur and it is easy to use physical means. It can be separated cleanly within or at the interface of the oxide layer. Further promotes peeling Therefore, heat treatment or laser light irradiation is performed before peeling by the physical means. Processing may be performed. This is a process of manufacturing a semiconductor device using a peeling method that uses the film stress between the two layers to perform peeling. The configuration relating to the manufacturing method of Ming is that a first layer containing a semiconductor element is formed on the first substrate. In the process, the second substrate is adhered to the peeled layer with the first adhesive, and the peeled layer is attached to the first layer. The second step of sandwiching the substrate and the second substrate, and separating the peeled layer and the first substrate. In the third step, the third substrate is adhered to the peeled layer with a second adhesive, and the peeled layer is fronted. The fourth step of sandwiching the second substrate and the third substrate, and the peeled layer and the second substrate Separated to form the peeled layer having the second adhesive and the third substrate as a support. A semiconductor device having a fifth step and a sixth step of bending the third substrate. This is a method of making a table. In the fifth step of the above configuration, the first adhesive is removed by dissolving it in a solvent solution. Then, the peeled layer and the second substrate are separated, or the first adhesive material is made photosensitive. It is an adhesive to have, and in the fifth step, it is irradiated with light to form the peeled layer and the second group. It is characterized by separating it from the board. Further, the first substrate and the second substrate are in front of each other. The material has a higher rigidity than the third substrate, and the third substrate is a flexible substrate. It is desirable to have. Even in the above configuration, the semiconductor element overlaps with the gate electrode with an insulating film in between. A thin film transistor having a semiconductor layer as a channel, and the step of forming the semiconductor layer is It is preferable to irradiate the laser beam that scans in the same direction as the channel length direction of the channel. Castanopsis. In addition, a layer containing an organic compound is peeled off using the film stress between the two layers. The configuration relating to the manufacturing method of the present invention for manufacturing a semiconductor device having a light emitting element having a light emitting layer of , A subject containing a light emitting element or a semiconductor element having a layer containing an organic compound as a light emitting layer on the first substrate. In the first step of forming the peeling layer, the second substrate is adhered to the peeling layer with the first adhesive, and the front The second step of sandwiching the peeling layer between the first substrate and the second substrate provided with the film. And a third step of separating the peeled layer and the first substrate, and a third substrate on the peeled layer. Is adhered with a second adhesive, and the peeled layer is sandwiched between the second substrate and the third substrate. In the four steps, the film and the second substrate are separated, and the film and the second substrate are adhered to each other. The fifth step of forming the material and the layer to be peeled off using the third substrate as a support, and the third step. It is a method for manufacturing a semiconductor device, which comprises a sixth step of bending a substrate. In the above configuration, the film has a photosensitive adhesive on both sides or one side. The film is separated from the second substrate by irradiating light in the fifth step. It is characterized by being separated. Further, the first substrate and the second substrate are the third substrate. The material has a higher rigidity than the substrate, and the third substrate is a flexible substrate. Is desirable. Even in the above configuration, the semiconductor element overlaps with the gate electrode with an insulating film in between. A thin film transistor having a semiconductor layer as a channel, and the step of forming the semiconductor layer is It is preferable to irradiate the laser beam that scans in the same direction as the channel length direction of the channel. Castanopsis. The semiconductor device obtained by the manufacturing method of the present invention shown above has various features. Configuration 1 of the invention disclosed herein is on a substrate having a curved surface that is curved in a convex or concave shape. , Multiple thin film transistors are provided, and the channel length directions of the plurality of thin film transistors are all. The channel length direction is the same as the curved direction of the base material. It is a semiconductor device characterized by being different. Further, the present invention is a field in which different thin film transistors are formed in the pixel portion and the drive circuit. In this case, the configuration 2 of another invention is a curved surface curved in a convex or concave shape. A pixel portion and a drive circuit portion are provided on the base material having the above, and a thin film transistor provided on the pixel portion is provided. The channel length direction of the gista and the channel length of the thin film transistor provided in the drive circuit unit. The directions are arranged in the same direction, and the channel length direction is the curved direction of the base material. It is a semiconductor device characterized by being different from. The pattern design rules Is about 5 to 20 μm, and 10 for each of the drive circuit and pixel section.6~107About 4 TFTs Is built on the board. Further, in each of the above configurations, the channel length direction is the semiconductor layer of the thin film transistor. It is characterized in that it is in the same direction as the scanning direction of the laser beam irradiated to. On the board A field where a thin film transistor channel is formed from a semiconductor film crystallized by laser annealing. In that case, high field effect mobility can be obtained by aligning the crystal growth direction and the carrier movement direction. it can. That is, the electric field effect mobility is realized by matching the crystal growth direction and the channel length direction. It can be qualitatively high. Irradiate a non-single crystal semiconductor film with a continuously oscillating laser beam When crystallized, the solid-liquid interface is retained and continuous formation in the scanning direction of the laser beam. It is possible to carry out crystal growth. As the laser light, a gas laser such as an excimer laser A solid-state laser such as a laser or a YAG laser, or a semiconductor laser may be used. Also , The form of laser oscillation may be either continuous oscillation or pulse oscillation, and the shape of the laser beam. The shape may be linear or rectangular. Further, in each of the above configurations, the curved direction and the channel length direction are orthogonal to each other. It is characterized by that. That is, the channel length direction is orthogonal to the channel width direction. In the third aspect of the invention, a plurality of thin sheets are formed on a base material having a curved surface curved in a convex or concave shape. A film transistor is provided, and the channel width directions of the plurality of thin film transistors are all in the same direction. And the channel width direction is the same as the curved direction of the base material. It is a semiconductor device characterized by the above. In the configuration 3, the channel width direction is the semiconductor of the thin film transistor. It will be orthogonal to the scanning direction of the laser beam applied to the layer. Further, the base material having a curved surface is curved in a convex or concave shape, but is curved in a certain direction. If so, it can be said that it has a curved surface having a direction having a curvature and a direction having no curvature. .. Therefore, the configuration 4 of another invention has a curved surface having a direction having a curvature and a direction having no curvature. The channel length directions of the plurality of thin film transistors provided on the surface of the provided base material are all the same direction. And that the channel length direction and the direction without curvature are the same direction. It is a characteristic semiconductor device. In the configuration 4, the channel length direction is the semiconductor layer of the thin film transistor. It is characterized in that it is in the same direction as the scanning direction of the laser beam irradiated to. Further, the present invention relates to a flexible film (a film that can be curved). , Preferably, it can also be applied to the case where the peelable layer is attached to a film that is curved in one direction. In addition, this flexible film is not curved under normal conditions, and some external force is applied. It is supposed to be bent in a certain direction. Configuration 5 of another invention is convex or concave. A plurality of thin film transistors are provided on a base material that can be curved in a shape, and the plurality of thin films are provided. Those in which the channel length directions of the transistors are all arranged in the same direction and the base material is curved. The direction is a semiconductor device characterized in that it is different from the channel length direction. In the configuration 5, the channel length direction is the semiconductor layer of the thin film transistor. It is characterized in that it is in the same direction as the scanning direction of the laser beam irradiated to. Also, the above In configuration 5, the curved direction and the channel length direction are orthogonal, that is, the bay. The bending direction and the channel width direction are the same direction. In the present specification, the transfer material is a substance that is peeled off and then adhered to the layer to be peeled off. Yes, as long as it has a curved surface, it is not particularly limited, and it is plastic, glass, metal, ceramic. It may be a base material having any composition such as Further, in the present specification, the support is a physical hand. It is for adhering to the layer to be peeled when peeling by a step, and is not particularly limited, and is plastic. A base material having any composition such as a glass, a metal, a ceramic, etc. may be used. Also, the shape of the transcript The shape and the shape of the support are not particularly limited, and those having a flat surface, those having a curved surface, and flexibility. It may be in the form of a film or a film. Also, if weight reduction is the highest priority , Film-like plastic substrate, for example, polyethylene terephthalate (PET), Reether Sulfone (PES), Polyethylene Naphthalate (PEN), Polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PS) F), polyetherimide (PEI), polyarylate (PAR), polybutylene tereph Plastic substrates such as tarate (PBT) are preferred. Further, it is possible to realize a display having a curved surface by each of the above manufacturing methods. It can be mounted on vehicles such as automobiles, aircraft, ships, and trains. Inner wall of the vehicle, heaven For wells, etc., take as much space as possible, and it is a problem even if the human body collides with it for some reason. It is composed of a smooth curved surface so that it does not become. Configuration 6 of the other invention is convex or concave. A layer containing a thin film transistor and an organic compound on a base material having a curved curved surface is used as a light emitting layer. A vehicle in which a display device having a light emitting element is mounted as an instrument or a lighting device. This thin A display device having a light emitting element having a layer containing a film transistor and an organic compound as a light emitting layer is a. It is preferable to use the active matrix type, but it is also possible to manufacture a passive type display device. It is possible. For example, a vehicle window is used as a base material, and a layer containing an organic compound is used as a light emitting layer along the curved surface of the window. By bending and adhering a display device having an optical element, images and instruments can be displayed. Can be done. In particular, a display device having a light emitting element having a layer containing an organic compound as a light emitting layer is very useful. It can be thin and lightweight, and the space does not change. Organic compounds in vehicle windows When adhering a display device having a light emitting element having a layer containing the light emitting layer as a light emitting layer, a substrate, electrodes, or arrangement It is desirable that the wire be transparent, and a film that blocks external light may be provided. Also, When it is not displayed, it is preferable that the outside scenery can be confirmed without any problem. Also, layers containing organic compounds along the interior walls of vehicles, doors, seats and dashboards of cars. By bending and adhering a display device having a light emitting element as a light emitting layer, an image or a meter can be obtained. It is possible to display the vessel. The flexible display device of the present invention is attached along a curved surface. The work of installing the display device is easy because it only needs to be done, and the inner wall, door, seat, and duck There is no particular need to partially process the sboard. Also, for example, in a car, right c In the case of Ndol, there is a blind spot because there is a part of the car body (the part between the windowpanes) on the left rear side. However, the flexible display device of the present invention is attached to the part between the windowpanes, and further outside the vehicle. If you attach a camera that can shoot the blind spot direction and connect it to each other, the driver can check the blind spot be able to. In particular, a display device having a light emitting element having a layer containing an organic compound as a light emitting layer is a liquid. It is a display device that is stronger in moving images and has a wider viewing angle than a crystal display device. Further, the ceiling of the vehicle is used as a base material, and a layer containing an organic compound is used as a light emitting layer along the curved surface of the ceiling. By bending and adhering a display device having a light emitting element, it is possible to display an image or illuminate the inside. It can be performed. Further, for example, in a car, the present invention is provided in a portion between the ceiling and each window glass. A flexible display device is attached, and the outside scenery corresponding to each display device can be seen outside the vehicle. If you attach a camera that can shoot and connect it to each other, people in the car can stay in the car You can enjoy the outside scenery like an open car. Also, for example, on trains and trains If the flexible display device of the present invention is attached to the ceiling or side wall, the space can be narrowed. It is possible to display advertisements and display TV images without having to do so. Especially the layer containing organic compounds A display device having a light emitting element as a light emitting layer is a display device having a wider viewing angle than a liquid crystal display device. is there. In the above vehicle, if the radius of curvature of the curved surface of the mounted display device is 50 cm to 200 cm For example, a light emitting element having a thin film transistor or a layer containing an organic compound as a light emitting layer can be driven without any problem. Can be The channel length directions of the plurality of thin film transistors provided are all the same. If it is arranged in the direction and the channel length direction is different from the curved direction of the base material, It is preferable to let it.

According to the present invention, the position of the semiconductor region forming the TFT is aligned with the entire surface of the large-area substrate. It is crystallized by irradiating it with a laser beam to form a crystal semiconductor film with a large particle size with good throughput. A display that can be formed, improves the characteristics of the TFT, and has a curved surface. B can be realized.According to the present invention, a display having a curved surface can be realized, and a limited space such as an automobile or an aviation can be realized. When trying to install images and instrument displays in the driver's seat of a vehicle such as a machine, there are various cases. Parts with curved surfaces (windows, ceilings, doors, dashboards, etc.) It can be installed in, and the space can be narrowed.

0044<figref num="1">It is a process drawing which shows this invention. (Embodiment)</figref><figref num="2">It is a figure which shows each direction in this invention. (Embodiment)</figref><figref num="3">It is a layout drawing which shows one aspect of a laser irradiation apparatus. (Example 1)</figref><figref num="4">It is a layout drawing which shows one aspect of a laser irradiation apparatus. (Example 1)</figref><figref num="5">It is a figure explaining the relationship between the structure of the substrate provided with the TFT, the arrangement of the semiconductor region constituting the TFT, and the scanning direction of the laser beam.</figref><figref num="6">It is a figure explaining the scanning direction of a laser beam in a semiconductor film, and the manufacturing process of a top gate type TFT.</figref><figref num="7">It is a figure explaining the scanning direction of a laser beam in a semiconductor film, and the manufacturing process of a bottom gate type TFT.</figref><figref num="8">The process chart which shows Example 3.</figref><figref num="9">The figure which shows the VI characteristic graph of the n-channel type TFT after peeling.</figref><figref num="10">The figure which shows the VI characteristic graph of the p-channel type TFT after peeling.</figref><figref num="11">The process chart which shows Example 4. FIG.</figref><figref num="12">FIG. 6 is an external view of a semiconductor device having a light emitting element having a layer containing a curved organic compound as a light emitting layer. (Example 4)</figref><figref num="13">It is a figure which shows the front area in the driver's seat of a car. (Example 5)</figref><figref num="14">It is a figure which shows the rear part of a car. (Example 5)</figref><figref num="15">It is a process drawing which shows Example 6.</figref>

0045Embodiments of the present invention will be described below.

0046A typical production procedure using the present invention is briefly shown below with reference to FIGS. 1 and 2.

0047In FIG. 1 (A), 10 is a substrate, 11a is a peeling layer, 12 is a pixel portion provided on the peeling layer, and 1 3a is the semiconductor layer provided in the pixel portion, 13b is the channel length direction of the semiconductor layer 13a, 14a. Indicates the laser beam irradiation area, and 14b indicates the laser beam irradiation direction.

0048FIG. 1 (A) is a manufacturing process diagram in the process of completing the layer to be peeled off, and a laser beam is applied to the semiconductor layer. It is a simplified figure which shows the process of irradiating. Laser crystallization by this laser light irradiation treatment And laser annealing can be performed. Oscillation can be either pulse oscillation or continuous oscillation. However, in order to maintain the molten state of the semiconductor film and continuously grow crystals, continuous oscillation is required. It is desirable to select a mode.

0049In FIG. 1 (A), the channel length directions of many semiconductor layers contained in the layer to be peeled are all in the same direction. Is located in. Further, the irradiation direction of the laser beam, that is, the scanning direction is the same as the channel length direction. Let's be one. By doing so, the crystal growth direction and the channel length direction can be matched. The field effect mobility can be substantially increased. In Fig. 1 (A), the linear laser An example of irradiating with light is shown, but the present invention is not particularly limited. Also, here, the semiconductor layer is patterned. Laser light irradiation is performed after this, but laser light irradiation may be performed before patterning. ..

0050Next, various elements (thin film transistors) typified by TFTs are formed by forming electrodes, wiring, insulating films, etc. Forming photoelectric conversion elements and silicon resistance elements consisting of iodes and silicon PIN junctions) Then, after the layer to be peeled 11b is completed, the layer 11b is peeled off from the substrate 10.

0051The method of peeling is not particularly limited, but here, it is controlled by the heat treatment temperature and the type of substrate. Peeling using the film stress between the metal layer or nitride layer and the oxide layer, which is a peeling method that does not receive about Use the separation method. First, before obtaining the state of FIG. 1 (A), a nitride layer or metal is placed on the substrate 10. Form a layer (not shown). Typical examples of nitride layers or metal layers are Ti, W, A l, Ta, Mo, Cu, Cr, Nd, Fe, Ni, Co, Ru, Rh, Pd, Os, Ir , An element selected from Pt, or an alloy material or compound material containing the element as a main component A single layer consisting of these, or a laminate thereof, or these nitrides, for example, titanium nitride, nitride. Using a single layer consisting of tungsten, tantalum nitride, molybdenum nitride, or a laminate of these Just do it. Next, an oxide layer (not shown) is formed on the nitride layer or the metal layer. Oxidation A typical example of a physical layer is silicon oxide, silicon nitriding, or a metal oxide material. I. The oxide layer can be formed by any film forming method such as a sputtering method, a plasma CVD method, or a coating method. May be used. The film stress of this oxide layer is made different from the film stress of the nitride layer or the metal layer. It is very important to. Each film thickness is appropriately set in the range of 1 nm to 1000 nm, and each film thickness is set appropriately. The membrane stress may be adjusted. In addition, an insulating layer or a metal layer is provided between the substrate and the nitride layer or the metal layer. It may be provided to improve the adhesion with the substrate 10. Next, a semiconductor layer is formed on the oxide layer. , The peeled layer 11a may be obtained. The peeling method is based on the film stress of the oxide layer and the nitride layer. Alternatively, even if the film stress of the metal layer is different, the film is formed by heat treatment in the process of producing the layer to be peeled off. No peeling occurs. In addition, the above peeling method involves the film stress of the oxide layer and the nitride layer or gold. Since the film stress of the genus layer is different, it can be peeled off with a relatively small force. Further, here, an example is shown in which it is assumed that the mechanical strength of the layer to be peeled 11b is sufficient. , If the mechanical strength of the layer to be peeled 11b is insufficient, the support for fixing the layer to be peeled 11b It is preferable that the body (not shown) is attached and then peeled off. When the layer 11b to be peeled off is peeled off, the layer 11b to be peeled off should not be bent so as to be peeled off. It is also important to prevent the layers from cracking.

0052In this way, the peelable layer 11b formed on the oxide layer can be separated from the substrate 10. .. The state after peeling is shown in Fig. 1 (B). At the stage shown in Fig. 1 (B), not only the semiconductor layer However, electrodes and wiring are formed, but they are not shown here for the sake of simplicity.

0053The peeled layer 11c after peeling can be curved. The curved state is shown in Fig. 1 (C). Shown. The layer to be peeled 11c is curved in the direction shown in the direction 19. A transfer body having a curved surface Needless to say, it is also possible to paste it on (not shown).

0054In Fig. 1 (C), 15 is provided in the drive circuit (X direction) and 16a is provided in the drive circuit (X direction). Semiconductor layer, 16b is the channel length direction of the semiconductor layer 16a, 17 is the drive circuit (Y direction), 18 a is the semiconductor layer provided in the drive circuit (Y direction), and 18b is the channel length of the semiconductor layer 18a. It points to each direction.

0055As described above, in the present invention, the irradiation direction 14b of the laser beam and all provided on the layer to be peeled off. The channel length directions 13b, 16b, and 18b of the semiconductor layer of the above are set to be the same direction, and these directions are used. The biggest feature is that it is set so that it is orthogonal to the curved direction 19.

0056When focusing on one TFT in order to further clarify the interrelationship between these directions. Is shown in Fig. 2. In FIG. 2, the semiconductor layer 20, the gate electrode 21, and the electrode (source electrode or drain) are shown. TFTs with in-electrodes) 22 and 23 are briefly shown. This TFT is a known technique. A semiconductor film (amorphous silicon, etc.) that can be formed by using a technique and has an amorphous structure. ) Is made into a semiconductor film (polysilicon, etc.) having a crystal structure by a known crystallization technique. The desired shape is patterned to form the semiconductor layer 20, and a gate insulating film (not shown) is used. After covering, the gate electrode 21 is placed so as to partially overlap the semiconductor layer 20 with the gate insulating film in between. Impurity elements that form and impart n-type or p-type are added to a part of the semiconductor layer to reach the source region. Alternatively, a drain region is formed, an interlayer insulating film (not shown) is formed to cover the gate electrode, and the interlayer is formed. An electrode (source electrode or de) that electrically connects to the source or drain region on the insulating film. Rain electrodes) 22 and 23 may be formed.

0057In the present invention, the scanning direction 25 of the laser beam is shown in FIG. 2 in producing this TFT. Use the laser beam in the desired direction. In addition, the gate electrode 21 and the gate electrode 21 are sandwiched between them. The overlapping semiconductor layer 20 functions as a channel, and the channel length direction 24 is shown in FIG. It becomes the direction. The scanning direction 25 of the laser beam and the channel length direction 24 are the same direction. Also , The channel width direction, which is orthogonal to the channel length direction 24, is the curved direction 26. The same direction, and the curved direction 26 is the direction shown in FIG. In Fig. 2, Although a plug gate type TFT is shown as an example, the present invention can be applied without limitation to the TFT structure. For example, it can be applied to bottom gate type (reverse stagger type) TFTs and forward stagger type TFTs. And is possible.

0058Moreover, although the TFT in which the semiconductor layer containing silicon is used as the active layer is shown here, it is particularly limited. It is also possible to prepare an organic TFT as an active layer using an organic material. Organic TF The material that becomes the active layer of T is a material that contains a considerable amount of carbon in combination with other elements. Alternatively, it is a material containing isotopes of carbon elements other than diamond. With the active layer of organic TFT As a typical material, C60, C70, Thiophene polymer, thiophene substituted derivative, Poly (thienylene vinylene) and the like can be mentioned.

0059Further, the present invention can be used in various methods for manufacturing semiconductor devices. In particular, transcripts and supports By using a plastic substrate for the body, weight reduction can be achieved.

0060When manufacturing a liquid crystal display device, the support is used as a facing substrate and the sealing material is used as an adhesive. The support may be adhered to the layer to be peeled off. In this case, the element provided on the layer to be peeled is a pixel electrode. The liquid crystal material is filled between the pixel electrode and the facing substrate. .. Further, the order in which the liquid crystal display device is manufactured is not particularly limited, and an opposed substrate as a support is attached. After gluing and injecting liquid crystal, the substrate is peeled off and a plastic substrate as a transfer body is attached. Alternatively, after forming the pixel electrodes, the substrate is peeled off and the plastic as the first transfer body is used. After the substrate is attached, the opposing substrate as the second transfer body may be attached.

0061Further, light emission typified by an apparatus having a light emitting element having a layer containing an organic compound as a light emitting layer. When manufacturing the device, the support is used as a sealing material, and an organic compound such as water or oxygen is used from the outside. Completely shut off the light emitting element from the outside so as to prevent substances that promote layer deterioration from entering. Is preferable. Further, it is represented as an apparatus having a light emitting element having a layer containing an organic compound as a light emitting layer. When producing a light emitting device, not only the support but also the transfer body is sufficiently water from the outside. It is preferable to prevent the invasion of substances that promote the deterioration of the organic compound layer, such as minutes and oxygen. Further, the order in which the light emitting device is manufactured is not particularly limited, and after forming the light emitting element, the light emitting device is used as a support. Paste the plastic substrate, peel off the substrate, and paste the plastic substrate as a transfer body. It may be attached, or after forming the light emitting element, the substrate is peeled off and the plastic as the first transfer body is used. After pasting the stick substrate, you may paste the plastic substrate as the second transfer body. I. Also, if it is important to suppress deterioration due to permeation of water and oxygen, it will be peeled off after peeling. By forming a thin film in contact with the layer, cracks generated during peeling are repaired, and the layer to be peeled off. A film having thermal conductivity as a thin film in contact with aluminum, specifically, an aluminum nitride or aluminum. By using nium nitride, the heat generated by the device is diffused and deterioration of the device is suppressed. Along with the effect, the effect of protecting the transfer material, specifically, the deformation and deterioration of the plastic substrate is obtained. be able to. In addition, this film having thermal conductivity is a mixture of impurities such as moisture and oxygen from the outside. It also has the effect of preventing entry.

0062The present invention having the above configuration will be described in more detail with reference to the following examples. I will do it.

Here, an example of a laser processing apparatus suitable for the present invention is shown. Crystallization of amorphous silicon by laser annealing is carried out through a process of melting and solidification. However, in detail, it is considered to be divided into the stages of crystal nucleation and crystal growth from the nuclei. .. However, laser annealing using a pulsed laser beam is performed at the formation position of crystal nuclei. And the production density cannot be controlled, leaving it to occur naturally. Therefore, crystal grains Is formed at an arbitrary position in the plane of the glass substrate, and its size is as small as 0.2 to 0.5 μm. Only small things have been obtained. Many defects are generated at the grain boundaries, which are the electric fields of the TFT. Effect It is considered to be a factor that limits mobility.On the other hand, the method of scanning a continuously oscillating laser and crystallizing it while melting and solidifying it is a zone mel. It is considered to be a method similar to the ting method, but a large beam size cannot be obtained and a large area group is used. It was obvious that it would take a considerable amount of time to achieve crystallization over the entire surface of the plate. In this embodiment, the entire surface of the large-area substrate is roughly aligned with the position where the TFT is formed. A crystal semiconductor film with a large particle size is formed with good throughput by irradiating with a laser beam to crystallize. The laser processing apparatus that can be used is shown below. The laser irradiation device of this embodiment is a first movable device that deflects the laser beam in the main scanning direction. A long length that receives the laser beam deflected in the main scanning direction and scans in the sub-scanning direction. The second movable mirror is equipped with the second movable mirror, and the second movable mirror depends on the rotation angle around the axis in the long direction. Then, the laser beam is scanned in the sub-scanning direction, and the laser beam is applied to the object to be processed on the mounting table. It is equipped with a means to irradiate. Further, as another laser irradiation device, a second laser beam is deflected in the first main scanning direction. 1 First sub-scanning method by receiving the movable mirror and the laser beam deflected in the first main scanning direction A first laser beam scanning system with a long second movable mirror that scans in the direction and a laser A third movable mirror that deflects the beam in the second main scanning direction, and a mirror that is deflected in the second main scanning direction. A second with a long fourth movable mirror that receives the laser beam and scans in the second sub-scanning direction. The laser beam scanning system of 2 and the second movable mirror have an angle of rotation centered on the axis in the long direction. The laser beam is scanned in the first sub-scanning direction, and the laser is applied to the object to be processed on the mounting table. The means for irradiating the beam and the fourth movable mirror depend on the angle of rotation about the axis in the long direction. The laser beam is scanned in the second sub-scanning direction, and the laser beam is applied to the object to be processed on the mounting table. It may be a laser irradiation device provided with a means for irradiating. In the above configuration, galvano mirrors or polygon mirrors are suitable for the first and second movable mirrors. If the laser that supplies the laser beam is a solid-state laser or a gas laser, Good. In the above configuration, the laser beam is scanned by the first movable mirror in the main scanning direction, and the second movable mirror is used. By scanning in the sub-scanning direction with a mirror, the laser beam can be placed at any position on the object to be processed. It becomes possible to irradiate the room. Further, a plurality of such laser beam scanning means are provided. By irradiating the surface to be formed with a laser beam from the biaxial direction, the laser processing time is shortened. Can be shrunk.Hereinafter, the laser irradiation apparatus of this embodiment will be described with reference to the drawings.FIG. 3 shows a desirable example of the laser processing apparatus of this embodiment. The illustrated laser processing device , Solid-state laser 101 capable of continuous oscillation or pulse oscillation, to collect the laser beam Collimator lens or lens 102 such as cylindrical lens, laser beam light Fixed mirror 103 that changes the path, Gull that scans the laser beam radially in two dimensions Receiving the laser beam from the vano mirror 104 and galvano mirror 104, the mounting table 106 It consists of a movable mirror 105 that directs a laser beam to the irradiated surface. Galvano Mirror 1 The optical axes of 04 and the movable mirror 105 are crossed, and the mirrors are rotated in the directions shown by the arrows. By setting the laser beam over the entire surface of the substrate 107 placed on the mounting table 106. Can be scanned. The movable mirror 105 acts as an fθ mirror and is covered by correcting the optical path difference. It is also possible to correct the beam shape on the irradiation surface. FIG. 3 shows a galvano mirror 104 and a base placed on a mounting table 106 by a movable mirror 105. This is a method of scanning a laser beam in the uniaxial direction of the plate 107. As a more preferable form , As shown in FIG. 4, in addition to the configuration of FIG. 3, half mirror 108, fixed mirror 109, Two-axis direction (X and Y direction) laser at the same time by adding Lubano mirror 110 and possible mirror 111 The beam may be scanned. By adopting such a configuration, the processing time can be shortened. Wear. The galvano mirrors 104 and 110 may be replaced with polygon mirrors. The preferred laser is a solid-state laser, YAG, YVO.4, YLF, YA l5O12A laser using crystals doped with Nd, Tm, and Ho is applied to crystals such as .. The fundamental wave of the oscillation wavelength varies depending on the material to be doped, but it oscillates at a wavelength of 1 μm to 2 μm. To do. For crystallization of a non-single crystal semiconductor film, the laser beam is selectively absorbed by the semiconductor film. Therefore, it is preferable to apply the second harmonic to the fourth harmonic of the oscillation wavelength. Typically Nd: YAG laser (primary wave 1064 nm) for crystallization of amorphous silicon The second harmonic (532 nm) is used. In addition, gas lasers such as argon laser, krypton laser, excimer laser, etc. You can also apply the In addition, the atmosphere for irradiating the laser beam is an atmosphere containing oxygen, an atmosphere containing nitrogen, and an inert atmosphere. Either the atmosphere or the vacuum may be used, but it may be appropriately selected according to the purpose. Oscillation may be in either pulse oscillation or continuous oscillation, but the molten state of the semiconductor film is maintained. In order to grow crystals continuously, it is desirable to select the mode of continuous oscillation. When a TFT is formed from a semiconductor film crystallized by laser annealing on a substrate, it is crystallized. A high field effect mobility can be obtained by aligning the growth direction of the carrier with the movement direction of the carrier. That is, the electric field effect mobility is substantially increased by matching the crystal growth direction and the channel length direction. Can be squeezed. When a non-single crystal semiconductor film is irradiated with a continuously oscillating laser beam to crystallize it, it is solid. The liquid interface is maintained, and continuous crystal growth can be performed in the scanning direction of the laser beam. Is. As shown in Fig. 4, an active matrix type liquid crystal display device with an integrated drive circuit is formed. In the TFT substrate (mainly the substrate on which the TFT is formed) 112 for forming, the pixel portion 113 Drive circuit units 114 and 115 are provided around the above, and Fig. 4 shows such a layout. It is a form of a laser irradiation device in consideration of the above. As mentioned above, the laser beam from the biaxial direction In the configuration where the mirrors are incident, a set of galvano mirrors 104 and 110 and movable mirrors 105 and 111 By matching, the laser beam is synchronized or asynchronous in the X and Y directions indicated by the arrows in the figure. It is possible to irradiate with a laser, and specify the location according to the TFT layout. -It is possible to irradiate the beam. Figure 5 shows in detail the relationship between the substrate 112 on which the TFT is provided and the irradiation direction of the laser beam. It shows. Pixel units 113 and drive circuit units 114 and 115 are formed on the substrate 112. The area is shown by the dotted line. At the crystallization stage, a non-single crystal semiconductor film is formed on the entire surface. However, the semiconductor region for forming the TFT is an alignment marker formed at the edge of the substrate. It can be more specific. For example, the drive circuit unit 114 is a region forming a scanning line drive circuit, and the partially enlarged view 3 01 shows the scanning directions of the semiconductor region 204 of the TFT and the laser beam 201. half Any shape of conductor region 204 can be applied, but in any case the channel The long direction and the scanning direction of the laser beam 201 are aligned. Also, it intersects with the drive circuit unit 114. The drive circuit unit 115 extending in the direction of insertion is an area forming a data line drive circuit, and is semi-conducted. Match the alignment of body region 205 with the scanning direction of the laser beam 202 (enlarged view 302). .. The same applies to the pixel portion 113, and the arrangement of the semiconductor regions 206 is arranged as shown in the enlarged view 303. Align and scan the laser beam 203 in the channel length direction. Scan the laser beam The direction is not limited to one direction, and reciprocating scanning may be performed. Next, with reference to FIG. 6, crystallization of the non-single crystal semiconductor film and the formed crystalline semiconductor film are used. The process of forming the TFT will be described. FIG. 6 (1-B) is a vertical cross-sectional view of a non-single crystal semiconductor. The film 403 is formed on the glass substrate 401. A typical non-single crystal semiconductor film 403 An example is an amorphous silicon film, and other amorphous silicon germanium films, etc. Can be applied. A thickness of 10-200 nm is applicable, but of the laser beam It may be further thickened depending on the wavelength and energy density. Also, it is not connected to the glass substrate 401. A blocking layer 402 is provided between the crystal semiconductor film 403 and the crystal semiconductor film 403, and the alkali metal is formed from the glass substrate. It is desirable to take measures to prevent impurities such as these from diffusing into the semiconductor film. Block As the king layer 402, a silicon nitride film, a silicon oxide nitride film, or the like is applied. Also, a metal layer or nitriding between the blocking layer 402 and the substrate 401 for peeling. A laminate 409 of a metal layer and an oxide layer is formed. As the metal layer or nitride layer, Ti, Al , Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Ru, Rh, Pd, Os, I An element selected from r and Pt, or an alloy material or compound material containing the element as a main component Nitride consisting of a single layer consisting of, or a laminate of these, such as titanium nitride, tungsten nitride, A single layer made of tantalum nitride, molybdenum nitride, or a laminate thereof may be used. here Then, a titanium nitride film having a film thickness of 100 nm is used by the sputtering method. In addition, the place where the adhesion with the board is bad In that case, a buffer layer may be provided. Tungsten single layer and tungsten nitride have good adhesion It is one of the preferred materials. The oxide layer is a silicon oxide material or a metal oxide. A single layer made of a material or a laminate thereof may be used. Here, the film thickness is 20 by the sputtering method. A 0 nm silicon oxide film is used. The bonding force between the metal nitride layer and the oxide layer is strong against heat treatment. , Film peeling (also called peeling) does not occur, but the oxide layer can be easily obtained by physical means. It can be peeled off in the layer or at the interface of. A glass substrate is used here. However, the peeling method can use various substrates. Substrate 401 is a quartz substrate, A ceramic substrate, a silicon substrate, a metal substrate, or a stainless steel substrate may be used. Next, crystallization is formed by irradiation with the laser beam 400, and the crystalline semiconductor film 404 is formed. Can be formed. The laser beam 400 is assumed, as shown in Figure 6 (1-A). The scanning is performed according to the position of the semiconductor region 405 of the TFT. Beam shape is rectangular, It can be linear, elliptical, or whatever. The laser beam focused by the optical system , Since the energy intensity is not always constant at the center and the edge, the semiconductor region 405 is bee. It is desirable not to cover the edge of the mud. The scanning of the laser beam is not limited to scanning in only one direction, but may be performed in a reciprocating manner. In that case It is also possible to change the laser energy density for each scan and cause crystal growth in stages. Is. In addition, hydrogenation, which is often required when crystallizing amorphous silicon, is required. It is also possible to combine the processing of, first scanning with low energy density, after releasing hydrogen , The energy density may be increased and crystallization may be completed by a second scan. In such a laser beam irradiation method, a continuously oscillating laser beam is irradiated. This enables crystal growth with a large particle size. Of course, it is the scanning speed of the laser beam and It is necessary to set detailed parameters such as energy density as appropriate, but the scanning speed should be 10 to 80. This can be achieved by setting cm / sec. Melting with a pulsed laser-solid The crystal growth rate after crystallization is said to be 1 m / sec, but the laser beam is slower than that. By scanning the room and slowly cooling it, continuous crystal growth at the solid-liquid interface becomes possible. It is possible to increase the particle size of the crystal. The laser irradiation device of this embodiment specifies an arbitrary position on the substrate in such a situation. It is possible to crystallize by irradiating a laser beam with a laser from two axes. -By irradiating the beam, the throughput can be further improved. In addition, by irradiating with laser light, peeling from the substrate can be done cleanly with less force. The layer to be peeled off, which can be separated and has a large area, can be peeled off over the entire surface. Granular oxides (eg, ITO (Indium Oxide Oxide)) to further facilitate exfoliation Zinc alloy), indium zinc oxide alloy (In2O3ZnO), zinc oxide (ZnO), etc.) May be provided at the interface between the nitride layer or the metal layer or the metal nitride layer and the oxide layer. After that, as shown in FIGS. 6 (2-A) and 6 (2-B), the formed crystalline semiconductor film was formed. Ching to form the semiconductor region 405 divided into islands. Top gate type TFT field In that case, a gate insulating film 406, a gate electrode 407, and a conductive impurity are formed on the semiconductor region 405. A region 408 can be formed to form a TFT. Then, using known technology, it is necessary The element may be formed by forming wiring, an interlayer insulating film, or the like according to the above.When the element having the TFT is obtained in this way, the substrate 401 is peeled off according to the embodiment. Real In the example, what was formed on the blocking layer 402 was the layer to be peeled 11 shown in the embodiment. Corresponds to b. Support for fixing the stripped layer when the mechanical strength of the stripped layer is insufficient It is preferable that the body (not shown) is attached and then peeled off. By peeling off, the layer to be peeled off formed on the oxide layer can be easily separated from the substrate. Wear. The layer to be peeled after peeling can be curved in a certain direction. The peeled layer has a curved surface Needless to say, it is also possible to attach it to a transfer body (not shown).Also in this embodiment, the present invention is provided in the irradiation direction (scanning direction) of the laser beam and in the layer to be separated. The channel length direction of all the semiconductor layers 204 to 206 and 405 is set to be the same direction. , Set so that these directions and the curved direction are orthogonal to each other. By doing this, the curved surface It is possible to realize a display having. In addition, this embodiment can be freely combined with the embodiments.

In Example 1, an example of a top gate type TFT is shown, but here, a bottom gate type TFT is used. An example is shown. Since the structure is the same as that of the first embodiment except for the structure of the TFT, it is omitted here. With reference to FIG. 7, crystallization of a non-single crystal semiconductor film and TF using the formed crystalline semiconductor film. The process of forming T will be described.FIG. 7 (1-B) is a vertical cross-sectional view in which the gate electrode 507 is formed on a glass substrate and the gate is formed. A non-single crystal semiconductor film 503 is formed on the gate insulating film 506 that covers the electrodes. Non-single crystal A typical example of the semiconductor film 503 is an amorphous silicon film, and the other is amorphous. A silicon germanium film or the like can be applied. A thickness of 10 to 200 nm can be applied However, it may be further thickened depending on the wavelength and energy density of the laser beam. Also , A blocking layer 502 is provided between the glass substrate 501 and the gate electrode, and is it a glass substrate? It is hoped that measures will be taken to prevent impurities such as alkali metals from diffusing into the semiconductor film. Good. As the blocking layer 502, a silicon nitride film, a silicon oxide nitride film, etc. are suitable. To use. Also, a metal layer or nitriding between the blocking layer 502 and the substrate 501 for peeling. A laminated 509 of a metal layer and an oxide layer is formed. As the metal layer or nitride layer, Ti, Al , Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Ru, Rh, Pd, Os, I An element selected from r and Pt, or an alloy material or compound material containing the element as a main component Nitride consisting of a single layer consisting of, or a laminate of these, such as titanium nitride, tungsten nitride, A single layer made of tantalum nitride, molybdenum nitride, or a laminate thereof may be used. here Then, a titanium nitride film having a film thickness of 100 nm is used by the sputtering method. In addition, the place where the adhesion with the board is bad In that case, a buffer layer may be provided. Tungsten single layer and tungsten nitride have good adhesion It is one of the preferred materials. The oxide layer is a silicon oxide material or a metal oxide. A single layer made of a material or a laminate thereof may be used. Here, the film thickness is 20 by the sputtering method. A 0 nm silicon oxide film is used. The bonding force between the metal nitride layer and the oxide layer is strong against heat treatment. , Film peeling (also called peeling) does not occur, but the oxide layer can be easily obtained by physical means. It can be peeled off in the layer or at the interface of. Next, crystallization is formed by irradiation with the laser beam 500, and the crystalline semiconductor film 504 is formed. Can be formed. The laser beam was obtained using the laser processing apparatus shown in Example 1. Be done. The laser beam 500 is the assumed TFT semiconductivity, as shown in Figure 7 (1-A). The scan is performed according to the position of the body region 505. The beam shape can be arbitrary, such as rectangular, linear, or elliptical. Condensing with an optical system Since the energy intensity of the laser beam is not always constant at the center and the end, it is semi-conducted. It is desirable that the body region 505 does not cover the edge of the beam. The scanning of the laser beam is not limited to scanning in only one direction, but may be performed in a reciprocating manner. In that case It is also possible to change the laser energy density for each scan and cause crystal growth in stages. Is. In addition, hydrogenation, which is often required when crystallizing amorphous silicon, is required. It is also possible to combine the processing of, first scanning with low energy density, after releasing hydrogen , The energy density may be increased to complete the crystallization in the second scan. In such a laser beam irradiation method, a continuously oscillating laser beam is irradiated. This enables crystal growth with a large particle size. Of course, it is the scanning speed of the laser beam and It is necessary to set detailed parameters such as energy density as appropriate, but the scanning speed should be 10 to 80. This can be achieved by setting cm / sec. Melting with a pulsed laser-solid The crystal growth rate after crystallization is said to be 1 m / sec, but the laser beam is slower than that. By scanning the room and slowly cooling it, continuous crystal growth at the solid-liquid interface becomes possible. It is possible to increase the particle size of the crystal. In addition, by irradiating with laser light, peeling from the substrate can be done cleanly with less force. The layer to be peeled off, which can be separated and has a large area, can be peeled off over the entire surface. Granular oxides (eg, ITO (Indium Oxide Oxide)) to further facilitate exfoliation Zinc alloy), indium zinc oxide alloy (In2O3ZnO), zinc oxide (ZnO), etc.) May be provided at the interface between the nitride layer or the metal layer or the metal nitride layer and the oxide layer. After that, as shown in FIGS. 7 (2-A) and 7 (2-B), the formed crystalline semiconductor film was formed. Ching to form the semiconductor region 505 divided into islands. Here, the semiconductor area 505 An etching stopper is provided on the top to form a one-conductive impurity region 508 to form a TFT. Can be After that, using known technology, wiring, interlayer insulating film, etc. are formed as needed. The element may be formed.Once the element having the TFT is obtained in this way, the substrate 501 is peeled off according to the embodiment. Real In the example, what was formed on the blocking layer 502 is the layer to be peeled 11 shown in the embodiment. Corresponds to b. Support for fixing the stripped layer when the mechanical strength of the stripped layer is insufficient It is preferable that the body (not shown) is attached and then peeled off. By peeling off, the layer to be peeled off formed on the oxide layer can be easily separated from the substrate. Wear. The layer to be peeled after peeling can be curved in a certain direction. The peeled layer has a curved surface Needless to say, it is also possible to attach it to a transfer body (not shown).Also in this embodiment, the laser beam irradiation direction (scanning direction) and all provided on the layer to be peeled off. The same direction as the channel length direction of the semiconductor layer 505, and these directions and the curved direction. Set so that and are orthogonal to each other. By doing this, a display with a curved surface can be realized. Can be done. In addition, this embodiment can be freely combined with the embodiments.

In this example, FIG. 8 shows a technique for transferring a layer to be peeled off including a TFT. In FIG. 8, 830 is the first substrate, 831 is the first material layer composed of a nitride layer or a metal layer, 832 is a second material layer consisting of an oxide layer, 833 is a layer to be peeled off, 834 is a first adhesive, 8 35 is the second substrate, 836 is the second adhesive, and 837 is the third substrate. In this embodiment, as the first substrate 830, a glass substrate, a quartz substrate, a ceramic substrate, etc. Can be used. In addition, a semiconductor substrate typified by a silicon substrate or stainless steel A metal substrate typified by the substrate may be used. Here, a glass substrate with a thickness of 0.7 mm (# 1) 737) is used. First, as shown in FIG. 8 (A), the first material layer 831 is formed on the substrate 830. First The material layer 831 has tensile stress even if it has compressive stress immediately after film formation. However, abnormalities such as peeling may occur due to heat treatment or laser light irradiation in the formation of the layer to be peeled off. It does not occur, and after the layer to be peeled is formed, 1 to 1 × 1010(Dyne / cm2) Has tensile stress It is important to use the material. A typical example was selected from W, WN, TiN, TiW An element, or a single layer composed of an alloy material or compound material containing the element as a main component, or These are laminated. The first material layer 831 may be formed by a sputtering method. A second material layer 832 is then formed on top of the first material layer 831. Second material layer 832 As a result, abnormalities such as peeling occur due to heat treatment in the formation of the layer to be peeled off or irradiation with laser light. It does not occur, and after the layer to be peeled is formed, 1 to 1 × 1010(Dyne / cm2) It is important to use a material with compressive stress in the range of. As a second material layer 832, A typical example is silicon oxide, silicon oxide nitride, metal oxide material, or a laminate of these. Can be mentioned. The second material layer 832 may be formed by a sputtering method. Second When the material layer 832 is formed by the sputtering method, a rare gas typified by argon gas is used in the chamber. -Introduced into the second material layer 832 to contain a trace amount of noble gas element. In the first material layer 831 and the second material layer 832, the film thickness of each is 1 nm to 1000. Internal stress in the first material layer 831 and the second material layer 83, set appropriately in the nm range. The internal stress in 2 may be adjusted.Further, in FIG. 8, in order to simplify the process, the first material layer 831 is in contact with the substrate 830. Is shown, but the buffer layer is formed between the substrate 830 and the first material layer 831. An edge layer or a metal layer may be provided to improve the adhesion to the substrate 830. Next, a layer to be peeled 833 is formed on the second material layer 832. (Fig. 8 (A)) The peeled layer 833 has various elements (thin film transistors, layers containing organic compounds as light emitting layers). Is it a light emitting element, an element with a liquid crystal, a memory element, a thin film diode, or a PIN junction of silicon? It may be a layer including a photoelectric conversion element or a silicon resistance element. However, the liquid crystal In the element having the element, the layer to be peeled 833 includes a facing substrate. In addition, the layer to be peeled 83 As the forming process of 3, heat treatment within a tolerable range of the first substrate 830 can be performed. .. The internal stress in the second material layer 832 and the internal stress in the first material layer 831. Even if they are different, the film peeling occurs due to the heat treatment in the manufacturing process of the layer to be peeled 833. I don't know. Next, a process for partially reducing the adhesion between the first material layer 831 and the second material layer 832. Do the reason. The process of partially reducing the adhesion is pre-processed along the periphery of the area to be peeled off. The process of partially irradiating the second material layer or the first material layer with laser light, or A local pressure is applied from the outside along the periphery of the region to be peeled off to form the second material layer. A process that damages the inside of a layer or a part of an interface. Specifically, with a diamond pen, etc. A hard needle may be pressed vertically to apply a load and move. Preferably, the scriber device Use it, set the pushing amount to 0.1 mm to 2 mm, and apply pressure to move it. in this way, It is important to create a part where the peeling phenomenon is likely to occur before peeling, that is, a trigger. It is essential, and by performing pretreatment that selectively (partially) reduces the adhesion, there is no peeling defect. As a result, the yield is further improved. Next, the second substrate 835 and the layer to be peeled 833 are bonded with the first adhesive 834. (Figure 8 (B)) The first adhesive 834 is a reaction-curable adhesive, a thermosetting adhesive, and an ultraviolet hard adhesive. Examples thereof include photocurable adhesives such as chemical adhesives and various curable adhesives such as anaerobic adhesives. Addition In addition, these adhesives are soluble in solvent solutions, and their adhesive strength decreases when exposed to light. It may have photosensitivity. The composition of these adhesives includes, for example, epoxy-based adhesives. Any type such as relate type and silicone type may be used. The formation of such an adhesive is, for example, , Made by coating method. The first adhesive is removed in a later step. Here, the first Soluble contact that dissolves in solvent solution (water, alcohol, toluene, etc.) as the adhesive of 1. Use a landing material. Also, instead of the first adhesive 834, a tape having an adhesive on one or both sides may be used. Good. One or both sides of this tape are soluble in solvent solution or when exposed to light It may have a photosensitive adhesive material that reduces the adhesive strength. The second substrate 835 is a glass substrate, a quartz substrate, a ceramic substrate, a plastic substrate, etc. Can be used. In addition, a semiconductor substrate typified by a silicon substrate or stainless steel A metal substrate typified by the substrate may be used. In this embodiment, the second substrate 835 is thicker and more rigid than the first substrate 830. A quartz substrate (thickness 1.1 mm) is used. A plastic film was used as the second substrate In the case, when transferring the element formed on the first substrate 830 to the plastic film, that is, When the film is lifted by adhering the film to be peeled layer 833 with the first adhesive 834, The ilum is bent, and the layer to be peeled 833 is also affected by the bending, causing cracks. I was afraid to go. Therefore, the layer to be peeled 833 formed on the first substrate 830 is formed on the first substrate 830 to have a high rigidity. After sticking to the second substrate 835 with the first adhesive 834, the first substrate 830 is peeled off, and the first substrate 830 is peeled off. After that, a plastic film (third substrate 837) is applied to the layer containing the element with the second adhesive 836. If the procedure is to separate the second substrate 835 after pasting, cracks are unlikely to occur. Can be Next, the adhesive is peeled off from the region side where the adhesiveness is partially reduced, and the arrow in FIG. 8 (C) shows. In the direction, the first substrate 830 provided with the first material layer 831 is used as a physical means. Peel off more. (Fig. 8 (C)) The second material layer 832 has compressive stress, and the first material layer 8 Since 31 has tensile stress, a relatively small force (eg, human hand, sprayed from a nozzle) It can be peeled off by the wind pressure of the gas, ultrasonic waves, etc.). In this way, the peelable layer 833 formed on the second material layer 832 is transferred from the first substrate 830. Can be separated. The state after peeling is shown in FIG. 8 (D). Then, with the second adhesive 836, the third substrate 837 and the second material layer 832 (and the layer to be peeled off) 833) and glue. (Fig. 8 (E)) The second adhesive 836 is from the first adhesive 834. It is also important that the adhesive strength is strong. The second adhesive 836 includes reaction-curable adhesives, thermosetting adhesives, and UV-curable adhesives. Examples thereof include photocurable adhesives such as agents and various curable adhesives such as anaerobic adhesives. In addition, this The solubility of these adhesives in a solvent solution and the photosensitivity that the adhesive strength decreases when irradiated with light. You may have. The composition of these adhesives includes, for example, epoxy-based adhesives and acrylates. Any system, silicone system, etc. may be used. The formation of such an adhesive is performed, for example, by a coating method. In addition, the second adhesive is later In the process of, it becomes one of the supports of the layer to be peeled off. As the second adhesive 836, the third substrate and the second Use a material that has both high adhesion to the adhesive and the adhesion between the second adhesive and the layer to be peeled off. .. Here, an ultraviolet curable adhesive is used as the second adhesive 836. In addition, it is soluble in a solvent solution as a second adhesive 836, and has adhesive strength when irradiated with light. When a material having photosensitivity is used, the third substrate can also be peeled off in a later step. It is also possible to use only the second adhesive as the support. Also, the second adhesive 83 Instead of 6, a tape having an adhesive on one side or both sides may be used. Up to one side of this tape On both sides, it is soluble in a solvent solution and has photosensitivity that reduces its adhesive strength when irradiated with light. You may have an adhesive to have. A flexible substrate may be used as the third substrate 837. In this embodiment, the third substrate As 837, it is a plastic film. After obtaining the state shown in Fig. 8 (E), it is then immersed in a solvent solution to separate only the second substrate 835. To. (Fig. 8 (F)) For the first adhesive, a soluble adhesive that is soluble in a solvent solution is used. Therefore, it is easily removed and the second substrate 835 and the layer to be peeled 833 are separated. Further, the input / output terminals of the elements included in the layer to be peeled 833 are the uppermost layer (that is, the second layer) of the layer to be peeled. It is formed so as to be exposed to the layer closest to the substrate side of the above. Therefore, the second substrate separation step After that, the first adhesive on the surface of the layer to be peeled off is completely removed so that the input / output terminals are exposed. Is desirable. Further, here, as the first adhesive material 834, a soluble adhesive material that is soluble in a solvent solution. Was used to show an example in which the second substrate was separated by immersing it in a solvent solution, but the present invention is not particularly limited, and for example, , Thermosetting adhesive (adhesive strength decreases when irradiated with ultraviolet rays) is used as the first adhesive. The second substrate may be separated by irradiating with ultraviolet rays. In the above steps, the layer to be peeled 833 having the second adhesive 836 and the third substrate 837 as supports. It is possible to manufacture a semiconductor device provided with the above. Then, it is curved as shown in Fig. 8 (G). If so, it is possible to complete a semiconductor device with a curved surface radius of curvature of 50 cm to 200 cm. Wear. When it is curved, it may be adhered along the curved surface to be installed. The second adhesive 83 There is an oxide layer 832 which is a second material layer between 6 and the layer to be peeled 833. Obtained in this way In the semiconductor device, the second material layer 832 is formed by a sputtering method, and the second material layer 832 is formed. Since it contains a trace amount of noble gas elements, the semiconductor device as a whole is made flexible. Can be Further, in this embodiment, the group is bonded to the third substrate and then curved, but the group has a curved surface directly. The material may be bonded and curved with a second adhesive 836. Here, an example in which the semiconductor device is completed by the above process is shown, but the semiconductor device is mounted by the above process. You may make up to the middle of the place. For example, according to the above process, a circuit consisting of a TFT is included. After forming the peelable layer and obtaining the peelable layer having the second adhesive and the third substrate as the support, In addition to the element formation process, various semiconductor devices, typically layers containing organic compounds, are used as light emitting layers. A light emitting device or a liquid crystal display device having a light emitting element may be completed.In addition, a light emitting device having a light emitting element having a layer containing a passive organic compound as a light emitting layer is manufactured. You can also do it. In addition, in order to reduce the adhesion between the third substrate and the second adhesive, the third substrate is 837. AlN on the surfaceXOYWhen a film-formed plastic film is used, the second substrate 83 The 5th and 3rd substrates 837 can be separated. In this case, it supports the second adhesive 836 A semiconductor device provided with a layer to be peeled 833 as a body can be manufactured. This semiconductor device Thin, lightweight, and flexible because the support is only the second adhesive 836. Can be. Further, it is formed on the first substrate before the first substrate is peeled off by actually performing the above step. The electric measurement of the TFT was performed, the first substrate and the second substrate were peeled off, and then the electric power of the TFT was measured again. Qi measurement was performed. There was almost no change in the TFT characteristics before and after the peeling. Channel length after peeling Figure 9 shows the VI characteristic graph of an n-channel TFT with L / channel width W = 50 μm / 50 μm. Shown in. In addition, the p-channel with channel length L / channel width W = 50 μm / 50 μm after peeling The VI characteristic graph of the type TFT is shown in Fig. 10. Since the characteristics of the TFT hardly changed before and after the peeling, it was transferred by such a series of procedures. It can be said that the process does not affect the TFT even if copying and pasting are performed. Also, It is possible to form the TFT directly on the rustic substrate, but due to the low heat resistance of the substrate, It is difficult to perform heat treatment above 300 ° C, which is high as obtained in FIGS. 9 and 10. It is also difficult to form a TFT that exhibits its characteristics. As shown in this example, it has heat resistance. After forming the TFT on the substrate, the heat-resistant substrate is peeled off to show Fig. 9 and It is possible to form a TFT with high characteristics as obtained in FIG.

In this example, the technique shown in Example 3 is used to emit light with a layer containing an organic compound as a light emitting layer. FIG. 11 shows a procedure for manufacturing a light emitting device having an element. First, the pixel part (n-channel type TFT and p-channel type TFT) and the pixel part are on the same substrate. Simultaneous drive circuit TFTs (n-channel TFTs and p-channel TFTs) Organic Light Emitting Device (OLED) is formed on it. To do. A first material layer 9 consisting of a nitride layer or a metal layer on a first substrate 930 according to Example 3. 31. Form a second material layer 932 composed of an oxide layer. A layer 933a containing the TFT and wiring on the second material layer 932 is then shown in Example 1. It may be produced by using the above-mentioned technique. After forming an insulating film that covers each TFT, it is provided in the pixel section. Form a cathode or anode that electrically connects to the TFT. Then the end of the cathode or anode Insulations called banks are formed at both ends so as to cover. Also, if necessary, TF A passivation film (protective film) made of a nitride film may be formed by covering T. Then both EL layer (organic compound material layer) and organic emission on a cathode or anode whose edges are covered with a bank Form the anode or cathode of the optical device. When the lower layer of the EL layer is the cathode, the anode is on the EL layer. If the lower layer of the EL layer is an anode, a cathode may be provided on the EL layer. As the EL layer, an EL layer (EL layer) can be freely combined with a light emitting layer, a charge transport layer, or a charge injection layer. A layer for causing light emission and movement of carriers for that purpose) may be formed. For example, low A molecular organic EL material or a polymer organic EL material may be used. In addition, a luminescent material (singlet compound) that emits (fluoresces) as an EL layer by singlet excitation. A thin film consisting of a thin film, or a luminescent material (triplet compound) that emits light (phosphorescence) by triplet excitation. A thin film made of (things) can be used. In addition, silicon carbide is used as a charge transport layer and a charge injection layer. It is also possible to use an inorganic material such as. These organic EL materials and inorganic materials are known materials. Can be used. The EL layer is formed as a thin film layer with a total of about 100 nm. .. Therefore, it is necessary to improve the flatness of the surface formed as the cathode or the anode. Also, as a material used for the cathode, a metal with a small work function (typically, Group 1 of the periodic table) It is said that it is preferable to use metal elements belonging to Group 2) or alloys containing these. .. The smaller the work function, the higher the luminous efficiency. Among them, the material used for the cathode. As a material, an alloy material containing Li (lithium), which is one of the alkali metals, is desirable. Further, as the conductive film used for the anode, a material having a larger work function than the material forming the cathode. ITO (Indium Tin Oxide Oxide), Indium Zinc Oxide Oxide (In)2O3ZnO), zinc oxide (ZnO), and other materials and ingredients with lower sheet resistance than ITO. Physically, platinum (Pt), chromium (Cr), tungsten (W), or nickel (Ni) Materials such as can be used. In the present specification, between the anode and the cathode of the light emitting element having the layer containing the organic compound as the light emitting layer. All formed layers are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer and a hole injection. It includes an inlet layer, an electron injection layer, a hole transport layer, an electron transport layer and the like. Basically, the organic light emitting element is positive It has a structure in which poles / light emitting layers / cathodes are stacked in order, and in addition to this structure, anode / hole injection Laminated in the order of inlet layer / light emitting layer / cathode, anode / hole injection layer / light emitting layer / electron transport layer / cathode, etc. It may have a structure. A light emitting element having a layer containing an organic compound as a light emitting layer is a luminescence generated by applying an electric field. A layer containing an organic compound (organic luminescent material) from which sense (Electroluminescence) can be obtained (hereinafter referred to as , Described as an organic light emitting layer), an anode, and a cathode. In addition, when controlling the current flowing through the organic light emitting element by TFT, there are roughly two methods. There is. Specifically, the method of controlling the current in the voltage range called the saturation region and the saturation region There is a method of controlling the current in the voltage range until it reaches the limit. In this specification, the Vd-Id curve The range of Vd at which the current value is almost constant is called the saturation region. The present invention emits organic light The driving method is not limited to the element, and any driving method may be used. In the above steps, the layer 933b containing a light emitting element having the layer containing the organic compound as the light emitting layer and the generation A layer to be peeled is formed in which a layer 933a containing a TFT connected to an optical element is laminated. In addition, it should be noted. A light emitting device having a layer containing an organic compound as a light emitting layer is vulnerable to moisture and oxygen, and therefore contains an organic compound. Immediately after forming the light emitting element having the layer as the light emitting layer, it is sealed with a substrate for sealing, a sealing can, or a sealing material. You may. Next, a process for partially reducing the adhesion between the first material layer 931 and the second material layer 932. Do the reason. The process of partially reducing the adhesion is pre-processed along the periphery of the area to be peeled off. The process of partially irradiating the second material layer or the first material layer with laser light, or A local pressure is applied from the outside along the periphery of the region to be peeled off to form the second material layer. A process that damages the inside of a layer or a part of an interface. Specifically, with a diamond pen, etc. A hard needle may be pressed vertically to apply a load and move. Preferably, the scriber device Use it, set the pushing amount to 0.1 mm to 2 mm, and apply pressure to move it. in this way, It is important to create a part where the peeling phenomenon is likely to occur before peeling, that is, a trigger. It is essential, and by performing pretreatment that selectively (partially) reduces the adhesion, there is no peeling defect. As a result, the yield is further improved. Next, it is provided at the end of the lead-out wiring connected to the TFT provided on the layer to be peeled 933a. Attach FPC901 to the terminal electrode. Next, the second substrate 935 and the layers to be peeled 933a and 933b are brought into contact with each other with the first adhesive 934. To wear. (Fig. 9 (B)) The film 902 is pre-bonded to the second substrate 935 with the adhesive 903. I will do it. This adhesive 903 uses a material having a weaker adhesive force than the first adhesive 934. It is preferable to have solubility in a solvent solution and photosensitivity in which the adhesive strength decreases when irradiated with light. What you have is desirable. The adhesive 903 is removed in a later step. Also, adhesive Instead of 903, a tape having an adhesive on one side or both sides may be used. A piece of this tape The surface or both sides are soluble in a solvent solution, and the adhesive strength is reduced when irradiated with light. It may have an adhesive having a property. The first adhesive 934 includes a reaction-curable adhesive, a thermosetting adhesive, and an ultraviolet-curable adhesive. Examples thereof include photocurable adhesives such as agents and various curable adhesives such as anaerobic adhesives. These contacts The composition of the coating material may be, for example, epoxy-based, acrylate-based, silicone-based, or any other. May be. However, a light emitting device having a layer containing an organic compound as a light emitting layer is vulnerable to moisture and oxygen. Therefore, it is desirable that the material has a high barrier property against water and oxygen. The formation of such an adhesive , For example, by the coating method. In this embodiment, the thermosetting type contact is used as the first adhesive 934. Use a dressing agent. The second substrate 935 is a glass substrate, a quartz substrate, a ceramic substrate, a plastic substrate, etc. Can be used. In addition, a semiconductor substrate typified by a silicon substrate or stainless steel A metal substrate typified by the substrate may be used. In this embodiment, the second substrate 935 is thicker and more rigid than the first substrate 930. A quartz substrate (thickness 1.1 mm) is used. A plastic film was used as the second substrate In the case, when transferring the element formed on the first substrate 930 to the plastic film, that is, When the film is bonded to the layer to be peeled 933 with the first adhesive 934 and the film is lifted, the film is lifted. The ilmu is bent, and the layer to be peeled off is also affected by the bending, and there is a fear that cracks will occur. There was this. Therefore, the layer to be peeled off formed on the first substrate 930 is formed on the second substrate 93 having high rigidity. After sticking to 5 with the first adhesive 934, the first substrate 930 is peeled off, and then the second contact After attaching a plastic film (third substrate 937) to the layer containing the element with the material 936, the first If the procedure for separating the substrate 935 of 2 is taken, cracks can be made less likely to occur. To. Next, the adhesive was peeled off from the region side where the adhesiveness was partially reduced, and FIG. 11 (C) In the direction of the arrow inside, the first substrate 930 on which the first material layer 931 is provided is Peel off by rational means. (Fig. 11 (C)) The second material layer 932 has compressive stress, and the second material layer 932 has compressive stress. Due to the tensile stress of one material layer 931, a relatively small force (eg human hand, nozzle) It can be peeled off by the wind pressure of the gas blown from, ultrasonic waves, etc.). In this way, the layers to be peeled 933a and 933b formed on the second material layer 932 are used as the first group. Can be separated from board 930. Then, with the second adhesive 936, the third substrate 937 and the second material layer 932 (and the layer to be peeled off) Adhere with 933a, 933b). (Fig. 11 (D)) The second adhesive 936 is the adhesive 9 It is important that the adhesive strength is stronger than 03.The second adhesive 936 includes a reaction-curable adhesive, a thermosetting adhesive, and an ultraviolet-curable adhesive. Examples thereof include various curable adhesives such as photocurable adhesives and anaerobic adhesives. In this example A thermosetting adhesive is used as the second adhesive 936. Solvent solution as second adhesive 936 We used a material that is soluble in water and has photosensitivity that reduces its adhesive strength when irradiated with light. In the case, the third substrate can also be peeled off in a later step, the film 902 and the first adhesive. And it is also possible to use only the second adhesive as the support. A flexible substrate may be used as the third substrate 937. In this embodiment, the third substrate As 937, the same plastic film as 902 is used. After obtaining the state shown in Fig. 11 (D), the adhesive strength of the adhesive 903 is weakened by irradiating it with ultraviolet rays. , Separate only the second substrate 935. (Fig. 11 (E)) Simplified by irradiating with ultraviolet rays It is simply peeled off and the second substrate 935 and film 902 are separated. In the above steps, the layer to be peeled 933 having the second adhesive 936 and the third substrate 937 as supports. A semiconductor device provided with a and 933b can be manufactured. And it is shown in FIG. 11 (F). If curved in this way, a semiconductor device with a curved radius of curvature of 50 cm to 200 cm is completed. Can be made to. When it is curved, it may be adhered along the curved surface to be installed. In addition, the first Between the adhesive material 936 of 2 and the layer to be peeled 933a, there is an oxide layer 932 which is a second material layer. To. In the semiconductor device thus obtained, the second material layer 932 is formed by a sputtering method, and the second material layer 932 is formed. Since the material layer 932 contains a small amount of noble gas elements, the semiconductor device as a whole is flexible. It can be sibble. Further, a luminescent element having a layer containing a curved organic compound obtained by the above procedure as a light emitting layer. The external view of the semiconductor device having a child is shown in FIGS. 12 (A) and 12 (B).FIGS. 12 (A) and 12 (B) correspond to FIG. 1, and the same reference numerals are used for the same parts. There is. The semiconductor device shown in FIG. 12 (A) emits light in the direction of the arrow in FIG. 12 (A). Moreover, it is curved in the direction shown in the direction 19. Although not shown here, the pixel unit 12 and drive times The channel length directions of a large number of semiconductor layers provided on the path 17 are all arranged in the same direction. Further, the irradiation direction of the laser beam, that is, the scanning direction is the same as the channel length direction. like this By doing so, the crystal growth direction and the channel length direction are matched, and the electric field effect mobility is substantially realized. It is high. Further, the semiconductor device shown in FIG. 12 (B) emits light in the direction opposite to that in FIG. 12 (A), and also emits light. One, it is curved in the direction shown in direction 19. In the light emitting direction, the layer containing the organic compound emits light. The practitioner can appropriately determine the method of manufacturing the light emitting element as a layer and the circuit configuration of the pixels. Wear.

This embodiment has a curved surface obtained by the technique shown in any one of Examples 1 to 4. An example in which a display is mounted on a vehicle is shown. Here, a car is used as a typical example of a vehicle. However, it is needless to say that it is not particularly limited and can be applied to aircraft, trains, trains, and the like. FIG. 13 is a diagram showing the vicinity of the driver's seat of an automobile. Sound reproduction device in the dashboard Specifically, car audio and car navigation are provided. The main body of the car audio 2701 has a display unit 2702, operation switches 2703, and 2704. Including. By implementing the present invention on the display unit 2702, a thin and lightweight car audio system O can be completed. Further, the present invention is realized in the display unit 2801 of the car navigation system. By applying it, a thin and lightweight car navigation system can be completed. In addition, near the operation handle 2602, there is a speedometer on the dashboard 2601. A display unit 2603 is formed in which a digital display of an instrument such as is made. Book on display 2702 By implementing the invention, it is possible to complete a thin and lightweight mechanical display. To. In addition, a display unit 2602 attached to the dashboard unit 2601 having a curved surface is formed. You may. Thin and lightweight machinery by implementing the present invention on the display unit 2602 Display device and image display device can be completed. The display unit 2602 is indicated by an arrow. It is curved in the direction of the sword. In addition, a display unit 2600 attached to the curved windshield 2604 is formed. You may. When the present invention is applied to the display unit 2600, a transparent material may be used, and the present invention may be used. It is possible to complete a thin and lightweight mechanical display or image display device by using light. .. The display unit 2600 is curved in the direction indicated by the arrow. Here is the front Although it is a lath, it can be installed on other window glass. For example, a display unit 2902 attached to a rear window 2900 having a curved surface is formed. You may. FIG. 14 is a diagram showing the area around the rear seats of an automobile. Note that FIG. 14 is shown in FIG. Since the operation handles are the same, the same reference numerals as those in FIG. 13 are used. Further, the flexible display device of the present invention is attached to the rear window 2900, and further. If you attach a camera that can shoot the rear outside the car and connect it to each other, the driver can use the car body 2906. You can see places that you can't see because they get in the way. The display unit 2902 is curved in the direction indicated by the arrow. Also, as shown in Fig. 14, if the steering wheel is right, a part of the car body 2906 (window glass) is on the left rear side. There is a blind spot because there is a part between the windows), but the flexible part of the present invention is in the part between the windowpanes. A mosquito that can attach a sibble display device (display unit 2901) and take a picture of the blind spot outside the vehicle. By attaching the melody and connecting them to each other, the driver can check the blind spot. In addition, display Part 2901 is curved in the direction indicated by the arrow. Further, the display unit 2905 may be provided on the sheet 2904. The person sitting in the back seat is on TV You can see the car navigation display. Also, although not shown here, the ceiling of the car is used as the base material, and organic compounds are added along the curved surface of the ceiling. By bending and adhering a display device having a light emitting element having the including layer as a light emitting layer, the image is projected. It is possible to display an image and illuminate the inside of a car. As described above, the display having the curved surface of the present invention has a radius of curvature of 50 cm to 200 cm. It can be easily mounted everywhere in a vehicle having a curved surface. Further, in this embodiment, in-vehicle car audio and car navigation are shown, but other rides are shown. It may be used for an object display or a stationary audio or navigation device. In addition, this embodiment can be freely combined with any one of Examples 1 to 4.

In Examples 1 to 5, peeling is performed by using film stress (stress strain) between two layers as a peeling method. However, the peeling method is not particularly limited, and a separation layer is provided between the layer to be peeled and the substrate. A method of removing the separation layer with a chemical solution (etchant) to separate the layer to be peeled from the substrate, or the layer to be peeled. A separation layer made of amorphous silicon (or polysilicon) is provided between the substrate and the substrate, and the substrate is passed through. By letting it pass and irradiating it with laser light to release hydrogen contained in amorphous silicon, It is possible to use a method of creating voids to separate the layer to be peeled from the substrate. Here, amorphous silicon (or polysilicon) containing a large amount of hydrogen is used as the separation layer. An example of peeling by irradiating the separation layer with laser light is shown in FIG. In FIG. 15 (A), 600 is a substrate, 601 is a separation layer, and 602 is a layer to be peeled off. In FIG. 15 (A), the substrate 600 is a translucent substrate, a glass substrate, a quartz substrate, or the like. Is used. Then, the separation layer 601 is formed. Amorphous silicon or Polysilicon is used. The separation layer 601 is formed by a sputtering method, a plasma CVD method, or the like. It is advisable to use a membrane method and appropriately include a large amount of hydrogen in the membrane. Next, the layer to be peeled 602 is formed on the separation layer 601. (Fig. 15 (A)) Layer to be peeled 60 2 consists of various elements represented by TFT (thin film diode, PIN junction of silicon) A layer containing a photoelectric conversion element or a silicon resistance element) may be used. Also, the board 600 can withstand A range of heat treatments can be performed. However, the separation layer 601 is a process for manufacturing the layer to be peeled 602. Prevents film peeling and the like from occurring due to the heat treatment in. Laser -When peeling using light, set the heat treatment temperature to 4 so that hydrogen is not released before peeling. It is desirable to form an element included in the layer to be peeled at 10 ° C or less. Next, the substrate 600 is passed through, and the separation layer is irradiated with laser light. (Fig. 15 (B)) Laser light includes gas lasers such as excimer lasers and solid lasers such as YAG lasers. A laser or a semiconductor laser may be used. In addition, the form of laser oscillation is continuous oscillation, Either loose oscillation may be used, and the shape of the laser beam may be linear or rectangular. This implementation In the example, the laser irradiation apparatus shown in Example 1 is used. Laser illumination shown in Example 1. By using a shooting device, a laser with good throughput is used over the entire surface of a large-area substrate. The beam can be irradiated. Further, the laser irradiation device shown in Example 1 can be used for crystallization. It can be used not only for peeling but also for various laser annealings. By releasing the hydrogen contained in the separation layer 601 by irradiating the above laser light, A gap is created to separate the peeled layer 602 and the substrate 600. (Fig. 15 (C)) Example 1 By using the laser irradiation device shown in the above, the layer to be peeled off having a large area can be applied to the entire surface. It is possible to peel off with good yield over the course.The state after peeling is shown in FIG. 15 (D). Further, here, the mechanical strength of the layer to be peeled 602 is ten. An example is shown assuming that it is minutes, but when the mechanical strength of the layer 602 to be peeled off is insufficient. After attaching a support (not shown) for fixing the layer to be peeled 602, it can be peeled off. preferable. Further, the peeled layer after peeling can be curved in a certain direction. The peeled layer has a curved surface Needless to say, it can be attached to a transfer body (not shown).Also in this embodiment, the laser beam irradiation direction (scanning direction) and all provided on the layer to be peeled off. The channel length direction of the semiconductor layer is the same, and these directions and the curved direction are direct. Set to intersect. By doing this, it is possible to realize a display with a curved surface. To. In addition, this embodiment can be freely combined with the embodiments, Examples 1 to 5.In addition, when this Example and Example 1 are combined, this Example instead of 409 of Example 1. The separation layer 601 of the above may be used, and the laser may be irradiated from the back surface to peel off.Similarly, when the present embodiment and the second embodiment are combined, the present is replaced with the 509 of the second embodiment. Using the separation layer 601 of the example, the laser may be irradiated from the back surface to peel off.

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Citations
Document	Relation	Office	Category	Cited during	Relevant claims
JP2000243970A	Cites	Japan	A	Search report	–
JP2001060697A	Cites	Japan	A	Search report	–
JP2001290439A	Cites	Japan	X	Search report	1
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2001367412	Japan	–	2001-11-30
2001367412	Japan	A	2001-11-30

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TW200300610A	Taiwan Province of China	A	2003-06-01
KR20030044840A	Republic of Korea	A	2003-06-09
CN1430192A	China	A	2003-07-16
JP2003229548A	Japan	A	2003-08-15
US2003162312A1	United States of America	A1	2003-08-28
TWI264121B	Taiwan Province of China	B	2006-10-11
KR20070120080A	Republic of Korea	A	2007-12-21
KR20080006507A	Republic of Korea	A	2008-01-16
US7335573B2	United States of America	B2	2008-02-26
US2008049437A1	United States of America	A1	2008-02-28
KR20090075784A	Republic of Korea	A	2009-07-09
KR20090076883A	Republic of Korea	A	2009-07-13
KR20090118902A	Republic of Korea	A	2009-11-18
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KR100929127B1	Republic of Korea	B1	2009-11-27
KR100929128B1	Republic of Korea	B1	2009-12-01
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KR100944887B1	Republic of Korea	B1	2010-03-03
CN101685796A	China	A	2010-03-31
CN101685829A	China	A	2010-03-31
KR100952320B1	Republic of Korea	B1	2010-04-09
KR20100109541A	Republic of Korea	A	2010-10-08
JP2011063263A	Japan	A	2011-03-31
KR20110130374A	Republic of Korea	A	2011-12-05
KR101095294B1	Republic of Korea	B1	2011-12-16
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KR101142313B1	Republic of Korea	B1	2012-05-17
JP5020370B2	Japan	B2	2012-09-05
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JP2012190025A	Japan	A	2012-10-04
KR101219070B1	Republic of Korea	B1	2013-01-21
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CN101685829B	China	B	2014-03-05
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US2017125454A1	United States of America	A1	2017-05-04
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JP2017191338AThis record	Japan	A	2017-10-19
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US2019371831A1	United States of America	A1	2019-12-05
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Legal events, newest first
	Event	Code
2019-02-13	Written withdrawal of applicationJAPANESE INTERMEDIATE CODE: A761A761	A761
2018-11-13	Decision of refusalJAPANESE INTERMEDIATE CODE: A02A02	A02
2018-05-15	Notification of reasons for refusalJAPANESE INTERMEDIATE CODE: A131A131	A131
2017-08-02	Written request for application examinationJAPANESE INTERMEDIATE CODE: A621A621	A621