Method of coating violet led with luminescent material and device

The present disclosure relates to the field of LED lighting and, more particularly, to the art of manufacturing an array of purple LEDs coated with a high density light emitting material layer.

Conventional embodiments of white LED light sources have consisted of surrounding an array of blue LED dies with a reflective white dam and filling the inner region of the dam with a silicone phosphor mixture. In the case of this conventional method, the blue LED die will be surrounded by the light emitting material-containing silicone, but the obtained conventional embodiment will have some notable defects. First, the light emitted from the light emitting material located far from the LED die can only exit the structure after being scattered many times. In the process, this light may be absorbed by other luminescent material particles, adjacent LED dies (if present) and / or materials forming the base of the structure (ie, submount material). The reflectance of the submount material has been specially treated, for example by coating the submount surface with a highly reflective white coating or a highly reflective metal (eg silver), but some of this light is converted to heat. Therefore, the luminous efficiency is lowered. As a more desirable optical configuration, there is one in which such a light source is produced by juxtaposing light emitting material particles in a spatial region very close to the LED die itself. In this way, light scattering by the luminescent material particles located away from the die and absorption by the submount material can be reduced, and the efficiency of such a light source can be improved. For example, in order to coat with a fluorescent material along the shape of the die, a thin sheet of silicone or other binder impregnated with the fluorescent material is hot-rolled on the LED die. This method has a drawback that the light output is reduced because the coating on the side of the LED die is poor.

<p> However, all that is required to confine the luminescent material particles in a spatial region very close to the LED die itself is to have one or more conformal layers (eg, a coating layer) of the luminescent material adhered around the LED die. It is a low-cost method that improves the luminous efficiency of the LED light source and obtains the desired color balance and highly reliable operation in high current density operation.</p>

<p> In order to improve the luminous efficiency of the LED light source, a cavity is created using a photoresist with a high aspect ratio, and this is filled with a phosphor. This method provides a device in which the sides of the LED die are coated with a phosphor.</p><p> According to the first aspect, the following method of coating a purple light emitting LED die with a high density light emitting material is provided. That is, in this method, an array of one or more purple light emitting LED dies is attached to a submount structure, and at least some of the one or more purple light emitting LED dies are characterized in that the thickness is larger than the height. A first cavity hole is opened in the photoresist around at least some of its one or more purple light emitting LED dies, a light emitting material is applied to the first cavity hole, and the photoresist is peeled off. To form one or more purple light emitting LED dies coated with a high density light emitting material.</p><p> In the second aspect, the following devices are provided. That is, the device includes a submount and a purple light emitting LED die attached to the submount, the outer edge of the die forms one area, and the device further covers at least one surface of the purple light emitting LED die. Includes a coating to coat, which coating comprises at least one light emitting material.</p><p> In the third aspect, the following devices are provided. That is, the device includes a lamp base, a submount, and a purple light emitting LED die attached to the submount and electrically connected to the lamp base, and the outer edge of the purple light emitting LED die forms a triangular region. The device further includes a coating that covers at least one surface of the purple light emitting LED die, which coating contains at least one light emitting material. This application claims the benefits of US Provisional Application No. 61 / 740,937 (Filing Date: December 21, 2012) under 35 USC 119 (e). Those skilled in the art will understand that the drawings described herein are for illustrative purposes only. These drawings are not intended to limit the scope of this disclosure.</p>

<figref num="1">Is a diagram of an LED die array presenting a series of electrically connected LED dies mounted on a silicon or ceramic submount.</figref><figref num="2A">Is a diagram showing juxtaposition of purple LED dies according to some embodiments, the violet LED dies are mounted on a silicon or ceramic submount used to fabricate an array of violet LEDs coated with a high density light emitting material layer. ing.</figref><figref num="2B">Is a diagram showing a coated purple LED die according to some embodiments, the coated purple light emitting LED die is attached to a silicon or ceramic submount, and the submount is thicker than the top surface of the purple LED die. It is coated with a photoresist layer.</figref><figref num="2C">Is a diagram of photoresist cavities formed around each LED die in the process of making an array of purple LED dies coated with a layer of high density light emitting material in some embodiments.</figref><figref num="2D">Demonstrates an assembly step in which, in some embodiments, the cavity is filled with a high density luminescent material and the position of these materials is fixed by applying silicone over the luminescent material layer.</figref><figref num="2E">Demonstrates an assembly step in which, in some embodiments, the photoresist layer is stripped to leave a luminescent material coating on a purple LED die.</figref><figref num="3">Is a diagram showing encapsulation of a coated purple LED die with clear silicone for improving light extraction efficiency in the process of making an array of purple LED dies coated with a high density light emitting material layer.</figref><figref num="4">Is a top view of a circular array of light emitting material coated purple LED dies according to some embodiments.</figref><figref num="5">Is a diagram of a purple LED die array coated with red, green and blue luminescent material-containing layers in some embodiments.</figref><figref num="6A">Is a side sectional view of a device formed from an array of purple LED dies coated with a layer of high density light emitting material and encapsulated at the die level in some embodiments.</figref><figref num="6B">Is a top view of a side wall molded device formed after fabrication of an array of purple LED dies coated with a layer of high density light emitting material and encapsulated at the die level in some embodiments.</figref><figref num="7A">Is a top view of a series of linear arrays of triangular purple LED dies 704 in some embodiments, the linear array being surrounded by a photoresist layer and covered by a light emitting material layer.</figref><figref num="7B">Is a top view of a series of linear arrays of triangular purple LED dies coated with a light emitting material layer after removal of the photoresist layer in some embodiments.</figref><figref num="8A">Shows an example of a linear light source composed of a triangular purple LED die coated with a light emitting material layer, the linear light source in some embodiments composed of two rows of triangular purple LED dies. By making one side of each LED die face the long side of the light source, the uniformity of light emission is improved.</figref><figref num="8B">Shows an example of a linear light source configured by a triangular purple LED die in some embodiments, the linear light source consisting of a row of triangular purple LED dies covered with a layer of luminescent material. By making one side of each LED die face the short side of the linear array, the light emission uniformity is improved.</figref><figref num="9A">Is a top view of a linear light source before filling the light emitting material in some embodiments.</figref><figref num="9B">Is a side view of a linear light source in some embodiments after the area for depositing the luminescent material is coated with the luminescent material and then further coated with a transparent lens cap.</figref><figref num="10A-10D">In some embodiments, the process of coating a single LED die multiple times is shown.</figref><figref num="10E-10G">Indicates, in some embodiments, the process of coating a single LED die multiple times.</figref><figref num="10H-10I">Indicates, in some embodiments, the process of coating a single LED die multiple times.</figref><figref num="11A-11D">In some embodiments, a single coating of the first luminescent material is applied to the first single purple LED die and a single coating of the second luminescent material is applied to the second single purple. The process to be performed on the LED die is shown.</figref><figref num="11E-11G">In some embodiments, a single coating of the first luminescent material is applied to the first single purple LED die and a single coating of the second luminescent material is applied to the second single purple. The process to be performed on the LED die is shown.</figref><figref num="11H-11I">In some embodiments, a single coating of the first luminescent material is applied to the first single purple LED die and a single coating of the second luminescent material is applied to the second single purple. The process to be performed on the LED die is shown.</figref><figref num="12A">and</figref><figref num="12B">Shows a single purple LED die according to some embodiments, with conformal coatings arranged in a coarsely distributed array.</figref><figref num="13A">and</figref><figref num="13B">and</figref><figref num="13C">Shows multiple purple LED dies in a densely distributed array according to some embodiments.</figref><figref num="13D">Is a diagram showing, in some embodiments, a color balance adjusted by spectral processing over a wavelength region and the resulting quality of emitted light having a spectrally processed color gamut.</figref><figref num="13E">Is a diagram showing how variations in blue light leakage due to variations in coating thickness cause variations in white points in some embodiments.</figref><figref num="13F1-13F2">Indicates, in some embodiments, the dimensions described as N, S, E and W, and Top, which are used to define the phosphor layer thickness around the LED die.</figref><figref num="13G1">and</figref><figref num="13G2">Shows a comparison of color variability with the asymmetry of the phosphor layer, and these variability are several times smaller for purple-based LEDs than for blue-based LEDs.</figref><figref num="14">Is a flow chart of a system that, in some embodiments, produces an enclosed purple LED die-based white light emitting linear light source.</figref><figref num="15">Is a flow chart of a system for making an array of purple LED dies coated with a layer of high density light emitting material in some embodiments.</figref><figref num="16A1-16A3">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16B1">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16B2">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16B3">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16C1-16C3">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16D1">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16D2">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16E1-16E2">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16F1">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16F2">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16F3">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16G1">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16G2">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16G3">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16G4">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16H">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="16I">Is a diagram showing an embodiment in which the present disclosure is applicable to lighting applications.</figref><figref num="17">Is a diagram showing a lamp device used to realize the embodiment of the present disclosure in a lighting application.</figref>

The term "exemplary" is used to indicate an example, case or example. Any aspect or design described herein as "exemplary" should not necessarily be construed as preferred or advantageous over other aspects or designs. Rather, when the term "exemplary" is used, it means to concretely show the concept.

The term "or" is intended to mean an inclusive "or" rather than an exclusive "or". That is, unless otherwise stated or otherwise clear from the context, the expression "X uses A or B" means any natural comprehension permutation. That is, if X uses A, X uses B, or X uses both A and B, the condition "X uses A or B" is satisfied in any of these cases. In addition, within the scope of this application and the appended claims, non-numerical nouns should generally be construed as "one or more" unless otherwise noted or unless the context makes it clear from the context. Is. Next, a specific embodiment will be described in detail. The disclosed embodiments are not intended to limit the scope of the claims. The composition of the wavelength conversion material described in the present disclosure includes various light emitting materials. In addition, the composition of the light emitting material described in the present disclosure includes various wavelength conversion materials.

Wavelength conversion materials may be ceramic or semiconductor particulate phosphors, ceramic or semiconductor plate phosphors, organic or inorganic downconverters, upconverters (anti-stalks), nanoparticles, and other materials that perform wavelength conversion. .. Some examples are listed below. (Srn, Ca_1-n)₁₀(PO₄)₆* B₂O₃:EU²⁺(However, 0 n 1) (Ba, Sr, Ca)₅(PO₄)₃(Cl, F, Br, OH): Eu²⁺, Mn²⁺(Ba, Sr, Ca) BPO₅:EU²⁺, Mn²⁺Sr₂Si₃O₈* 2 SrC_l2:EU²⁺(Ca, Sr, Ba)₃MgSi₂O₈:EU²⁺, Mn²⁺BaAl₈O₁₃:EU²⁺2SrO * 0.84P₂O₅* 0.16B₂O₃:EU²⁺(Ba, Sr, Ca) MgAl₁₀O₁₇:EU²⁺, Mn²⁺K₂SiF₆: Mn⁴⁺(Ba, Sr, Ca) Al₂O₄:EU²⁺(Y, Gd, Lu, Sc, La) BO₃: Ce³⁺, Tb³⁺(Ba, Sr, Ca)₂(Mg, Zn) Si₂O₇:EU²⁺(Mg, Ca, Sr, Ba, Zn)₂Si_1-xO_4-2x:EU²⁺(However, 0 x 0.2) (Ca, Sr, Ba) MgSi₂O₆:EU²⁺(Sr, Ca, Ba) (Al, Ga)₂S₄:EU²⁺(Ca, Sr)₈(Mg, Zn) (SiO₄)₄C_l2:EU²⁺, Mn2 + Na₂Gd₂B2O₇: Ce³⁺, Tb³⁺(Sr, Ca, Ba, Mg, Zn)₂P2O₇:EU²⁺, Mn²⁺(Gd, Y, Lu, La)₂O₃:EU³⁺, Bi³⁺(Gd, Y, Lu, La)₂O₂S: Eu³⁺, Bi³⁺(Gd, Y, Lu, La) VO₄:EU³⁺, Bi³⁺(Ca, Sr) S: Eu²⁺, Ce³⁺(Y, Gd, Tb, La, Sm, Pr, Lu)₃(Sc, Al, Ga)_5-nO_{12-3 / 2n}: Ce³⁺(However, 0 n 0.5) ZnS: Cu⁺, Cl^-(Y, Lu, Th) 3Al₅O12: Ce³⁺ZnS: Cu⁺, Al³⁺ZnS: Ag +, Al³⁺ZnS: Ag +, Cl-Ca_1-xAl_x-xySi_{1-x + xy}N_2-x-xyC_xy: ACa_1-xzNazM (III)_x-xy-zSi_{1-x + xy + z}N_2-x-xyC_xy: AM (II)_1-xzM (I)_zM (III)_x-xy-zSi_{1-x + xy + z}N_2-x-xyC_xy: AM (II)_1-xzM (I)_zM (III)_x-xy-zSi_{1-x + xy + z}N_{2-x-xy-2w / 3}C_xyO_wv/ 2H_v: AM (II)_1-xzM (I)_zM (III)_x-xy-zSi_{1-x + xy + z}N_{2-x-xy-2w / 3-v / 3}C_xyO_wH_v: A

However, 0 &lt;x &lt;1, 0 &lt;y &lt;1, 0 z &lt;1, 0 v &lt;1, 0 &lt;w &lt;1, x + z &lt;1, x&gt; xy + z, and 0 &lt;x-xy. -z &lt;1, M (II) is at least one divalent cation, M (I) is at least one monovalent cation, and M (III) is at least one trivalent. It is a cation, H is at least one monovalent anion, and A is a luminescent activator doped in the crystal structure. LaAl (Si_6-zAl_z) (N_10-zO_z): Ce³⁺(However, z = 1) (Ca, Sr) Ga₂S4: Eu²⁺AlN: Eu²⁺SrY₂S₄:EU²⁺CaLa₂S₄: Ce³⁺(Ba, Sr, Ca) MgP₂O₇:EU²⁺, Mn²⁺(Y, Lu)₂WO₆:EU³⁺, Mo⁶⁺CaWO₄(Y, Gd, La₎₂O₂S: Eu³⁺(Y, Gd, La)₂O₃:EU³⁺(Ba, Sr, Ca)_nSi_nN_n:EU²⁺(However, 2n + 4 = 3n) Ca₃(SiO₄) Cl₂:EU²⁺(Y, Lu, Gd)_2-nCa_nSi₄N_{6 + n}C_1-n: Ce³⁺, (However, 0 n 0.5) (Lu, Ca, Li, Mg, Y) alpha-SiAlON dopedwithEu²⁺And / or Ce³⁺(Ca, Sr, Ba) SiO₂N₂:EU²⁺, Ce³⁺Ba₃MgSi₂O₈:EU²⁺, Mn²⁺(Sr, Ca) AlSiN₃:EU²⁺CaAlSi (ON)₃:EU²⁺Ba₃MgSi₂O₈:EU²⁺LaSi₃N₅: Ce³⁺Sr10 (PO4)₆Cl₂:EU²⁺(BaSi) O₁₂N₂:EU²⁺M (II) aSibOcNdCe: A

However, (6 &lt;a &lt;8, 8 &lt;b &lt;14, 13 &lt;c &lt;17, 5 &lt;d &lt;9, 0 &lt;e &lt;2), and M (II) is (Be, Mg, Ca, Sr. , Ba, Cu, Co, Ni, Pd, Tm, Cd), and A is (Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Mn, Bi, Sb), SrS_i2(O, Cl)₂N₂:EU²⁺SrSi₉Al₁₉ON₃₁:EU²⁺(Ba, Sr) Si₂(O, Cl)₂N₂:EU²⁺LiM₂O₈: Eu3 + (where M = (W or Mo)).

It is understood that the purpose of this application is that if the light emitting material has two or more dopant ions (ie, the ions listed after the colon ":" in the light emitting material), this is the dopant ion of these dopant ions. This means that the material contains at least one (but not all) of them. That is, as will be appreciated by those skilled in the art, this type of notation means that the light emitting material may include any or all of these specific ions as dopants in the formula.

Furthermore, it is understood that nanoparticles, quantum dots, semiconductor particles and other types of materials can be used as wavelength conversion materials. The above list is representative and should not be construed as including all materials that can be used within the embodiments described herein.

Among those to be improved are high current density / high power LED applications where heating of light emitting material particles can result in reduced efficiency and shortened life. When a large photon stream is emitted from the LED die in such applications and these photons are absorbed by the luminescent material particles surrounding the LED die, a large amount of heat is generated in the luminescent material particles due to the photon down-conversion process. Occurs. The heat generated by this down-conversion often accumulates in the luminescent material particles, which is due to the low thermal conductivity of the silicone in which the luminescent material particles are dispersed. As a result of heat storage, the temperature of the luminescent material particles rises significantly. Due to such an increase in temperature, the down-conversion efficiency of photons decreases, and decomposition (for example, browning or cracking) of the surrounding silicone occurs. One solution to this problem is to pack the luminescent material tightly around the LED die to maintain thermal contact between the materials as well as thermal contact with the submount and LED die surface. .. Therefore, in this configuration, heat from the luminescent material particles can be efficiently transferred through the submount and the LED die itself and released from the rear of the package (eg, the thermal conductivity of both the luminescent material particles and the LED die). If it is higher than the conductivity of the silicone encapsulating material).

According to the prior art, layer deposition can be performed on the surface of the LED wafer, which can later be diced to obtain individual LED dies. However, this coating process is not suitable for 3D LED dies. Disclosed herein is a method of coating a three-dimensional purple LED die with a high density layer of luminescent material particles.

One method is to coat the LED die along the shape using an electrophoretic deposition (EPD) process. However, when using a blue light emitting LED die, a highly precision controlled light emitting material deposition process is required. This is because it is necessary to control the blue leakage to the final white spectrum with extremely high accuracy. Due to the complexity of the EPD deposition system, this coating process is expensive (especially if multi-layer coating is desired). By using a purple light emitting LED die instead of a blue light emitting LED die, the need for such ultra-high precision light emitting material thickness control is reduced, resulting in the use of less complex light emitting material deposition processes. Become. In some cases, the high density luminescent material layer provides thermal control that is at least partially based on the properties of the selected luminescent material. Insufficient density of luminescent materials in the coating layer allows for rational thermal contact between these materials, allowing a thermally conductive and optically transparent material to adhere to the coating layer. Therefore, the overall thermal conductivity of the layer can be improved. Table 1 lists exemplary materials that are thermally conductive and optically transparent.

<tables num="1"><img file="JP2014123738A_D0001.tif" /></tables>

In addition to the examples in Table 1, other materials such as the following can also be used. Zinc Fluoride-ZnF₂, Iron Fluoride-FeF₂, Cerium Fluoride-CeF₃, Potassium Dihydrogen Phosphate-KH₂PO₄, Aluminum Phosphate-AlPO₄, And potassium sulphate (K₂SO₄). In addition, there are multiple groups of materials with properties within the desired range (eg, composite fluorides (eg, KMeF).₃), Phosphate and sulfate). Here, referring to FIGS. 2A-2E and 3 above, the luminescent material deposition process may include any one or more of the following steps: 1) Attach the purple LED die 210 (eg flip chip LED die) to the submount 220 structure (eg silicon or ceramic submount).

2) Apply a resist layer (for example, a thick film) to the LED die array. As shown, the resist layer thickness G is slightly larger than the height of the LED die. In this configuration, the height of the resist can substantially affect the final thickness of the material coating on the top surface of the die. Therefore, the thickness of the luminescent material coating on the die can be adjusted regardless of the thickness of the luminescent material coating on the side of the die. The thickness of the luminescent material coating on the sides of the die can be controlled by the size of the openings in the resist layer.

3) Use photolithography to make a hole in the resist around the LED die. The non-flip chip design may provide an opening hole in the resist around the wire bond pad. 4) If necessary, wire bond the die (for example, if it is not a flip chip structure).

5) Apply a high density layer of luminescent material within the cavity surrounding the LED (eg, cavity 240) and at the top of the LED die. The high density layer may consist of a powder layer of luminescent material or a combination of luminescent material and transparent thermally conductive particles (see Table 1). Alternatively, the luminescent material may be compounded in a solvent solution and then evaporated to obtain a high density luminescent material layer, or the luminescent material may be prepared directly into an ultra-high density mixture of silicones. ..

6) Deposit silicone (eg, silicone 250), sol-gel or other stable binding material on the light emitting material (unless already premixed or blended into the silicone) (eg, using a blending needle 270). This allows the light emitting material to be fixed around the LED die.

7) For example, O₂The thick film (or other) resist material is peeled off by the plasma etching method. When selecting a photoresist, the etching rate of the binder material is slowed down so that the resist is selectively removed leaving a luminescent material coating layer surrounding each LED die. Therefore, the etch rate of the binder should be less than, for example, 10 times the etch rate of the photoresist 230.

8) In some embodiments (see, eg, FIG. 3), a die coated with a light emitting material is dipped in clear silicone 310 and the die is cured in a particular spatial orientation (eg, upside down). , Produce a small lens around each coated LED die. This improves the light extraction efficiency. Alternatively, a small silicone lens cap may be molded onto each die.

9) In some embodiments, a reflective dam is placed around a pair of dies on the submount and the dam is filled with clear silicone 310 or silicone filled with a small amount of diffusing material (eg, for light source uniformity). To improve). 10) Dicing a silicon or ceramic submount into a separate light source. 11) In some embodiments, when a reflection dam is used, a large lens is fixed to the reflection dam to further improve the light extraction efficiency.

By performing each of the above steps, a light source device in the form of a purple LED die in a two-dimensional array coated with a high-density light emitting material layer is obtained. In another embodiment (see Figure 5), multiple layers are coated. Such an LED light source can obtain a light extraction efficiency higher than the light extraction efficiency achievable by the light emitting material "paddle" method. In addition, the resulting device has heat transfer characteristics that facilitate high LED current density operation. In addition, the methods described herein allow the simultaneous coating of multiple LED die arrays (eg, in panel-level or wafer-level luminescent material deposition processes). The LED die array 100 of FIG. 1 presents a series of LED dies mounted and electrically connected to a silicon or ceramic submount. As shown, a dam is placed around the LED die array and the dam is filled with fluorophore-filled silicone.

FIG. 2A is FIG. 2A00 showing the juxtaposition of the purple LED dies 210, which are mounted on a silicon or ceramic submount 220 for making an array of purple LED dies coated with a high density light emitting material layer. ing. The purple LED die may be placed on the submount in any spatial configuration. For example, purple LED dies can be arranged in a linear or two-dimensional rectangular or circular configuration.

FIG. 2B is FIG. 2B00 showing the purple LED die 210 on the submount and coated with a photoresist layer that is thicker or taller than the purple LED die 210.

FIG. 2C is FIG. 2C00 of a photoresist 230 cavity (eg, cavity 240) around each purple LED die in the process of making an array of purple LED dies coated with a layer of high density light emitting material.

FIG. 2D is assembly step 2D00 in which the cavity (eg, cavity 240) is filled with a high density luminescent material and the position of the cavity is fixed by applying a small amount of silicone on the formed luminescent material layer 260.

FIG. 2E shows assembly step 2E00 in the process of making an array of purple LED dies coated with a high density light emitting material layer, where the photoresist layer is stripped to leave a light emitting material layer overlying the purple die.

FIG. 3 is FIG. 300 showing how the coated purple die is sealed with transparent silicone 310 to improve the light extraction efficiency in the process of manufacturing a high-density pack array of purple LED dies coated with a light emitting material.

FIG. 4 is a top view 400 of a circular array of purple LED dies 210 coated with luminescent material placed on a submount. The array may be formed with a triangular die, or a diamond-shaped die, a linear die, or a die of any shape.

FIG. 5 shows a red (eg, red layer 260R) -containing layer, a green (eg, green layer 260G) -containing layer, and a blue (eg, eg, green layer 260G) -containing layer obtained from the fabrication of an array of purple LED dies coated with a high density light emitting material layer. , FIG. 500 shows an arrangement of the blue layer 260B) coated with the light emitting material-containing layer.

FIG. 6A is a side sectional view 6A00 of a die-level encapsulated device formed by fabrication of an array of purple LED dies coated with a layer of high density light emitting material.

FIG. 6B is a top view 6B00 of a shaped side wall die level encapsulation device formed after fabrication of an array of purple LED dies coated with a layer of high density light emitting material. FIG. 7A is a top view 700 of a series of linear arrays of triangular purple LED dies 704, which are surrounded by a photoresist layer 708 covering the linear array electrodes 706. The photoresist layer 708 defines the outer edge of the region where the high density light emitting material layer 702 is formed on the inside, and the photoresist layer protects the electrode pads which may be distributed over the outer edge. After removing the photoresist, the individual linear arrays can be integrated.

FIG. 7B is a top view 750 of a series of linear arrays of triangular purple LED dies 704 after removing the photoresist layer. After removing the photoresist, the individual linear arrays can be isolated (eg, by cutting the device containing the luminescent material layer).

FIG. 8A shows, in some embodiments, an example 800 of a linear light source configured by a triangular purple LED die, where the linear light source is composed of two rows of triangular purple LED dies, each purple LED. One side of the die faces the long side of the light source to improve the uniformity of light emission.

FIG. 8B shows an example 850 of a linear light source configured by a triangular purple LED die in some embodiments. Here, the linear light source is composed of a single row of triangular purple LED dies, and one side of each purple LED die faces the short-dimensional side of the linear array to improve emission uniformity. FIG. 9A is a top view 900 of the linear light source before filling the light emitting material. As shown in FIGS. 9A and 9B, various embodiments are formed as follows. That is-provide a silicon or ceramic submount. -Place the purple LED die as a linear array on the submount (see Purple LED Die 904). -The area between and near the purple LED dies forming the linear array forms the boundary of the area for the luminescent material deposit 902. -Perform further processing steps as shown in Figure 9B. FIG. 9B shows the side surface 950 of the linear light source after the area for depositing the light emitting material is covered with the light emitting material and further covered with the transparent lens cap 908. In some embodiments, the following steps are performed. -Place a transparent silicone dam 906 around the linear array of LED dies. -Deposit one or more luminescent material layers (eg, in the encapsulating material) over the area for luminescent material deposition (see luminescent material layer 260). -Apply a transparent lens cap 908 on the luminescent material layer and dam.

As shown, the dam forms a moat around the LED die and defines the outline of the light emitting material layer. The dam surrounding the LED die is constructed of a material that is transparent to visible light (eg, transparent silicone). In such an embodiment, the dam functions as a sealing member on the side of the linear light source. The dam also forms a transparent base that can be covered with a transparent silicone lens cap (see Figure 9B). The resulting embodiment is a fully enclosed linear light source. This method enables a wafer level method for producing an enclosed linear light source. In some cases, it is possible to integrally mold a plurality of transparent dams together and then integrally mount them on a submount. With such a structure, each light source can be easily integrated, that is, it can be integrated during the submount dicing process.

The above technique for making an array of purple LED dies coated with a layer of high density light emitting material involves depositing a layer on the array of dies. Coat individual LED dies with other techniques. In particular, the embodiments disclosed below relate to a method of making individual LED dies coated with a luminescent material using a photolithography process. The methods disclosed herein include techniques capable of depositing a luminescent material onto individual LED dies in a manner that eliminates or reduces the need for dams. It is also possible to adjust the photolithography process to vary the thickness of the luminescent material at the top or sides of the array of individual single or multiple LED dies. The adjustment may be performed according to the light output conditions. In some cases, after the formation of the wire bond, a light emitting material is applied onto the individual LED dies. In addition, certain techniques for depositing a luminescent material onto individual LED dies have the ability to reduce backscattering of the luminescent material (eg, increase efficiency). In addition, certain techniques for depositing the luminescent material result in higher luminescent material filling, which allows lower operating temperatures (eg, integration of high refractive index silicone in the luminescent material mixture). it can). The above techniques and characteristics open up the following possibilities: That is-implementation of a wide-area light-emitting structure, -formation of a layered structure of light-emitting materials, and-formation of an array of LED pixels using various combinations of light-emitting materials.

Individual LED dies coated with a luminescent material are formed using photolithography, as described above and as described below. Although strictly exemplary, the process may proceed as follows. That is,

-Achieve a thickness of 350 μm using multiple spin processes (eg, spin 1 = 300 rpm for 20 seconds, spin 2 = 1000 rpm for 3.5 seconds, spin 3: 500 rpm for 14 seconds). -Bake the submount in a continuous firing process (eg, a hot plate (135 ° C) for 30 minutes after spin 2 and 40 minutes after spin 3). -Patter the substrate with a mask with an electrode mask aligner to make holes around the die. -Use close contacts with an exposure gap of 50 μm. -Using multiple exposures with alternating exposure and dwell times, the exposure dose was 7800 mJ / cm.²Set to. -Remove the photoresist around the die by developing the resist (eg, AZ300MIF using paddle development at room temperature for 5.5 minutes). -Then, a luminescent material (eg, dispensed in a silicone-based slurry) is applied into the opening around the die. -Remove unwanted air bubbles from the luminescent material mixture by performing a subsequent vacuum degassing step. -Bake this assembly in a convection oven at 150 ° C for 15 minutes to cure the silicone.

-Peel the photoresist using a first AZ300MIF (eg, at 80 ° C for 30 minutes or ultrasonic stripping) and then using an AZ400T (eg, at 80 ° C for 10 minutes). -After thoroughly cleaning the substrate with deionized water, blow dry with nitrogen. -After dehydration firing at 150 ° C for 5 minutes, test / evaluate the parts.

In some embodiments, it comprises two layers of luminescent material that coat the die. In one particular processing flow, a particular spin step is performed at a lower spin rate (eg, spin at 300 rpm for 20 seconds, 900 rpm for 3.5 seconds, 400 rpm for 14 seconds). For a combination of multilayer light emitting materials, the photoresist of the second layer is spun so that it is slightly thicker than the first layer (eg, about 0.5 μm thicker), thereby making the first layer thicker. During the process, the patterned luminescent material is slightly coated.

Several possible techniques for making LED dies coated with luminescent material using a photolithography process are shown in Figures 10A-10I (multiple coatings covering a single LED die), and 11A-11I (adjacent). Individual single coating covering a single LED die).

Figures 10A-10I show the process of forming multiple coatings on a single die. As shown, the multiple coatings of luminescent material are applied to a single LED die as follows.

A photoresist spin-on process is performed on the subassembly 10A00 to form the subassembly 10B00. Subassembly 10C00 is then formed using a mask and photoresist process. A first layer of luminescent material is deposited (eg, by dispensing) in the recesses formed after cleaning the photoresist to form the subassembly 10D00. Therefore, this subassembly is further cleaned to form subassembly 10E00. Subassembly 10F00 is formed (photoresist adherence) by yet another series of photoresist steps, exposure steps and cleaning steps to form subassembly 10G00 (after cleaning with mask 2). A second layer of luminescent material is deposited (eg, with a preparation) in the recesses formed after the formation of the subassembly 10G00, after which the subassembly 1H00 is further washed to form the subassembly 10I00. This subassembly has two layers of luminescent material coating adhered to a single LED die. Further steps can be taken with another mask to add the luminescent material of the third layer or the nth layer.

11A through 11I show a single coating of the first luminescent material on the first single LED die and a single coating of the second luminescent material on the second single LED die. The process to generate is shown above. As shown, multiple coatings of wavelength conversion material are applied to a single LED die as follows.

A photoresist spin-on process is performed on the subassembly 11A00 to form the subassembly 11B00. A mask and photoresist process is then used to form the subassembly 11C00, which is exposed to the first LED die. A first luminescent material layer is deposited (eg, by dispensing) in the recesses formed after cleaning the photoresist to form subassembly 11D00. Therefore, this subassembly is further cleaned to form subassembly 11E00. Yet another series of photoresist steps, exposure steps and cleaning steps are performed to form subassembly 11F00 (eg, with photoresist adherence) and subassembly 11G00 (after cleaning with mask 2). A layer of second luminescent material is deposited (eg, by dispensing) on a second LED die (eg, in a recess formed after the formation of subassembly 11G00). The subassembly is then further cleaned to form subassembly 11I00. This subassembly has different luminescent material coatings on the first LED die and the second LED die (eg, adjacent dies as shown). Using this technique, it is possible to apply various light emitting materials of different thicknesses as a conformal coating to separate (eg, adjacent) LED dies.

12A and 12B show a single LED die with conformal coatings arranged in a coarsely distributed array. More specifically, FIG. 12A shows an exemplary wire-bonded LED die (in an exemplary triangular planar shape). The wire-bonded LED die is surrounded by a patterned resist layer, with a cavity / moat adjacent to the illustrated LED die. FIG. 12B shows the same exemplary LED die with a conformal coating of luminescent material.

13A to 13C show a plurality of dies in a densely distributed array. More specifically, FIG. 13A shows an exemplary wire-bonded LED die array (having an exemplary triangular planar shape). This die array is surrounded by a patterned resist layer with cavities / moats adjacent to each LED die. FIG. 13B shows the same exemplary LED die array with a conformal coating of luminescent material. Figure 13C shows the power-on state of the geometric array of conformally coated LED dies.

FIG. 13D shows that the color balance adjusted by spectral processing over a certain wavelength region and the quality of the resulting emitted light have a spectrally processed color gamut. The embodiment described here solves the problem of excessive blue color balance in a conventional LED (for example, the problem of a large amount of blue light component) by processing the emission spectrum. The spectrum processing can be performed, for example, by selecting the emission spectrum of the LED (for example, selecting a purple emitting LED). Spectral processing can also be performed by selecting a particular luminescent material and depositing that luminescent material in a particular way that produces a particular structure near the LED. Thus, according to such a structure, a highly accurate wavelength conversion optical process can be easily performed from one or more photon down-conversions.

One possible way to measure the results of spectral processing (and, for example, to evaluate the quality of emitted light) is to clarify the color gamut of the light source. The experimental settings take into account up to 15 reflectance samples (eg, taken from the color quality scale [Davis 10]) and select the sample measurements to use. From a series of measurements, the chromaticity can be derived and calculated, and the color gamut points can be plotted based on the results.

Figure 13D shows two examples in which the color gamut of the reference blackbody radiator is superimposed on the correlated color temperature (CCT) 3000K. As can be seen by combining a series of experiments, when a blue light emitting LED is used, a color gamut in which blue is excessive occurs. When using a blue LED, variations in the luminescent material and in the technique of depositing the luminescent material result in certain structures near the LED, and even such structures have an excessive blue color gamut (eg,). , Blue excess color gamut 1381) occurs.

The improved color gamut 1384, also shown in FIG. 13D, was obtained using a configuration of a purple light emitting LED and a light emitting material selected to produce the desired saturation in the green and red regions. To achieve such a desired color gamut, a luminescent material is selected and then deposited in the vicinity of the LED with a precision controlled structure (eg, the thickness of the luminescent material coating). For example, the processing steps and structures of FIGS. 10A to 10I described above, and the processing steps and structures of FIGS. 11A to 11I described above can be used to control the thickness and height of the deposited structure with high precision. In the embodiments of FIGS. 10 and 11, the LED enclosure can be achieved by the process described above and in the following specific steps. That is,

-Apply a resist layer (eg, thick film) to the LED die array (resist layer thickness is greater than LED die height). In this configuration, the height of the resist can substantially affect the final thickness of the luminescent material coating on the top surface of the die.

-Adjust the thickness of the luminescent material coating on the top of the die so that it fits within the relative thickness compared to the thickness of the luminescent material coating on the side of the die. The thickness of the light emitting material coating on the side of the die can be controlled by the size of the opening of the resist layer. Further color variation according to the variation in coating thickness around the purple LED is characterized from the figure below. The graph shown in FIG. 13E shows how the white spots fluctuate due to the variation in blue light leakage caused by the variation in coating thickness.

Figure 13F shows the dimensions listed as N, S, E and W, and Top, which are used to define the phosphor layer thickness around the LED die. Some of the figures in the present application are side views corresponding to those viewed from the N, S, E or W directions.

FIG. 13G is a graph comparing color variations due to phosphor layer asymmetry. These variations are several times smaller for purple-based LEDs than for blue-based LEDs. The coating covering each surface of the purple light emitting LED is illustrated in the table below. As shown in the table below, the color point variation corresponding to the thickness is shown on the right side of FIG. 13G.

<tables num="2"><img file="JP2014123738A_D0002.tif" /></tables>

FIG. 14 is a flow chart of a system 1400 that produces a white light emitting linear light source based on an enclosed purple LED die. This generation is performed by the following steps. That is, a step of attaching a purple light emitting LED die to a silicon or ceramic submount of an nxm (but n&gt; m) array (see step 1420), a step of molding or stamping a dam in a 2D array, and submounting this dam array. A step of fixing to the mount (see step 1430), a step of applying silicone filled with luminescent material around the purple luminescent LED die (see step 1440), and a clear or white optical lens cap on the top of the dam and emitting light. A step of forming a transparent lens cap on both the top surfaces of the material conversion layer (see step 1450) and a step of dicing both the submount and the interdam connection (see step 1450).

FIG. 15 is a flow chart of a system 1500 for making a purple LED die coated with a high density luminescent material. Each step in the system can be performed individually or in combination with the method operations within the system 1500. Any operation performed within the system 1500 can be performed in any order unless specified in the claims. As shown, the system performs the following steps. That is, the step of attaching the purple LED die to the submount structure (see module 1520), the step of applying a resist layer thicker than the die height to the purple LED die array (see module 1530), and the purple LED die. Peel the resist material, leaving a cavity hole in the resist around it (see Module 1540), a luminescent material layer inside the cavity, and a luminescent material coating layer surrounding each purple LED die. A step (see module 1550) and a step of dying the submount to obtain individual parts (see module 1560).

<p> The following examples detail examples of components of embodiments disclosed herein. Those skilled in the art will appreciate that a number of modifications can be conceived without departing from the scope of this disclosure in any of the materials and methods.</p>

<p> Example 1 shows an aspect of the above-mentioned method for producing the above-mentioned individual white die array. This method is applied to fabrication using purple light emitting LEDs based on a GaN bulk substrate used in the high current density region. Some embodiments include such a white die array constructed with a purple LED die grown on a GaN bulk, and some embodiments have high current densities (eg, 150 amps / cm).²Density over or 175 amps / cm²Includes a separate purple LED die driven by a density that exceeds).</p>

<p> The apparatus formed by the technique of Example 1 further comprises a monochromatic red light emitting material, a green light emitting material and a blue light emitting material deposited around each purple LED die, and is present in a white light source in which the light emitting materials are mixed. Reduces light absorption. This may have the effect of increasing the lm / W efficiency of such a light source. Mixtures of red, green, blue and white (RGBW) coated purple LED dies can also be produced to increase color mixing.</p>

<p> The apparatus formed by the technique of Example 1 is formed by depositing a monochromatic light emitting material around individual purple LED dies in an array. Therefore, a bright monochromatic light source can be generated.</p>

<p> The apparatus formed by the technique of Example 1 further comprises the step of growing a multi-layer luminescent material stack by repeating the process described herein (see FIG. 5). In some such embodiments, the resist openings may be incrementally enlarged to allow the next layer of luminescent material to deposit. The thickness of the individual layers can be optimized for luminous efficiency. In addition, the height of the top layer of the purple LED die can be varied independently of the width of the layer on the side of the purple LED die.</p>

<p> The apparatus formed by the technique of Example 1 further comprises depositing a luminescent material in a color-separated layered structure around the die. For example, by depositing the red light emitting material layer and then working on the blue and green light emitting material layers, the light absorption in the purple LED die can be reduced. This is because short wavelength light, which is easily absorbed, rarely returns to the purple LED die due to scattering. The alignment accuracy achievable by standard photolithography techniques exceeds the accuracy suitable for generating layered structures around each die. Although strictly an example, the deposited first layer is formed to be wide enough to take into account the variation in the arrangement between dies on the submount, and the lower luminescent material layer is sufficiently thin. ..</p>

<p> The apparatus formed by the technique of Example 1 further comprises a two-layer luminescent material stack, which is a step of "dusting" the original openings in the resist layer with the desired first luminescent material to be deposited. And then a step of filling the cavity with additional luminescent material as described above.</p>

<p> The apparatus formed by the technique of Example 1 further comprises a warm white luminescent material and a cold white (bluish white) luminescent material deposited around another individually treatable die and a color point adjustable light source. To generate. In some variants, each of the different purple LED dies has a cold white, warm white, red, green or blue luminescent material coating, and these coatings can be selected in specific proportions for color adjustment. Get a white light source.</p>

<p> The apparatus formed by the technique of Example 1 further comprises repeating die-level encapsulation. In this case, a thick film resist is applied and a hole is opened around the die coated with the luminescent material to obtain a suitable side wall shape, and transparent on and around each coated purple LED die in an array. Apply silicone (see Figure 6). Optimal performance can be obtained from the die array by optimizing the size and shape of the transparent silicone encapsulation. Such a structure can, of course, be molded around the purple LED die using, for example, vacuum overmolding. In an exemplary embodiment, the cavity hole opening step is repeated one after another in the cavity hole next to the cavity hole in the previous layer to deposit a series of individual color light emitting layers.</p>

<p> The device formed by the technique of Example 1 includes vias formed on the submount for rear electrical connection. Using this technique, dicing the submount as individually coated pieces slightly larger than the die size simplifies the manufacturing step of a single die white LED. The lamp formed by such a die exhibits the light output of a purple-excited white light source of three light emitting materials, and the colors match. The lamp formed by such a die was able to exhibit a high light output at a high operating temperature required for the use of a daytime traveling lamp for an automobile.</p>

<p> The device formed by the technique of Example 1 can be arranged as a linear strip of individual dies (eg, a rectangular strip), which can be used as a tungsten filament-like light source. In the case of a soaked clear silicone cap, no further A-shaped lamp filament-like light source encapsulation would be necessary. Such linear strips can have sufficient surface illuminance currently used in automotive headlight applications. Such a linear strip may include a linear array of triangular purple LEDs on a rectangularly formed submount (or on the rectangular formation area of the submount), in which case the purple LED die will be triangular. One side of the LED die is placed so that it faces the short side of the submount. The process of making a purple LED die coated with a high density light emitting material layer includes: That is, a. The purple LED die is attached to the submount structure, b. The upper surface of the resist layer is provided above the upper surface of the purple LED die, and the resist layer is adhered to the purple LED die. Open a cavity hole in the surrounding resist layer, d. Apply a luminescent material layer into the cavity hole, e. Peel off the resist layer to obtain a luminescent material coating layer surrounding the purple LED die, f. Individual submounts It is to die in the part of. In the process of Example 11, the purple LED grows on a GaN bulk substrate.</p><p> In the process of Example 12, after applying the light emitting material layer, the cavity hole opening step is repeated one after another in the cavity hole next to the cavity hole of the previous layer to deposit a series of separate color light emitting layers. Let me. In the process of Example 13, the height of the resist layer above the LED die is not equal to the distance from the edge of the purple LED die to the photoresist cavity wall.</p><p> In the process of Example 14, the step of applying the light emitting material layer is to apply a blue light emitting material around a specific one of the purple LED dies, and apply a green light emitting material around a specific one of the purple LED dies, and purple. Includes applying a red luminescent material around certain of the LED dies. In the process of Example 15, each of the different purple LED dies is configured to drive separately to obtain a color adjustable light source.</p><p> In the process of Example 16, the step of applying the light emitting material layer includes the step of applying a cold white or warm white light emitting material around a specific one of the purple LED dies, each of which is different from the purple LED die. A light source with adjustable color temperature is obtained.</p><p> In the process of Example 17, the step of applying the light emitting material layer is to select a cold white light emitting material, a warm white light emitting material, a red light emitting material, a green light emitting material or a blue light emitting material around a specific one of the LED dies. A color-adjustable white light source is obtained, which comprises a step of applying in a ratio of In the process of Example 18, the luminescent material is deposited on a linear strip around a linear array of purple LED dies. In the process of Example 19, the cavity hole comprises a linear strip around a linearly arranged purple LED die.</p><p> In the process of Example 20, the purple LEDs are triangular, these purple LEDs are arranged in a linear array, with one side of the triangular purple LEDs facing the short side of the submount.</p><p> In the process of Example 21, the purple LEDs are triangular, these purple LEDs are arranged in a double strip of purple LEDs, with one side of the triangular purple LED facing the short side of the submount. The process of Example 22 further comprises encapsulating the purple LED die in silicone and curing to produce an encapsulating device.</p><p> The process of Example 23 further comprises a further cavity opening step, which is performed after coating the purple LED die with the first luminescent material and further coating the purple LED die with the second luminescent material. .. The process of Example 24 further comprises forming a through hole via in the submount. The process of Example 25 further comprises dicing a die coated with a luminescent material from a submount to obtain individual LEDs. In the process of Example 26, a reflective dam is placed around a die coated with a set of luminescent materials. In the process of Example 27, the layer of luminescent material is about 50 μm to about 450 μm thick. The process of Example 28 further comprises the step of applying silicone onto the light emitting material layer. The process of Example 29 further comprises mixing the luminescent material with a solvent and then applying silicone onto the luminescent material. The process of Example 30 further comprises mixing the luminescent material with silicone and then applying a luminescent material layer into the cavity holes. A light source is formed using purple light emitting LED dies arranged in an nxm array (where n&gt; m). Therefore, (i) the die array is surrounded by a transparent or white light dam material, (ii) silicone with a light emitting conversion material loaded is applied around the purple LED die inside the dam, and (iii) the dam and the light emitting material. A transparent or white light lens cap is applied on both of the conversion layers. In the light source of Example 32, a purple light emitting LED die is grown on a GaN bulk substrate. In the light source of Example 33, a small number of scattering centers are formed in the white light transparent dam material to improve the off appearance of the light source and / or change the emission pattern. In the light source of Example 34, a purple light emitting LED die is individually coated with a conformal light emitting material layer, and then a white light transparent dam is arranged. In the light source of Example 35, white light transparent silicone is applied around the die coated along the shape and on the dam to produce a lens cap. The method of producing an enclosed purple die-based white emission linear light source is carried out by the following steps. That is, (i) A purple light emitting LED die is attached to a silicon or ceramic submount in an nxm (but n&gt; m) array, (ii) a two-dimensional array of transparent or white light dams is molded or stamped, and this dam array is mounted on the submount. Fixed, (iii) luminescent material loaded silicone is applied around the purple light emitting LED die, and (iv) both the top surface of the dam and the top surface of the luminescent material conversion layer are transparent with a transparent or white light lens cap. Form a lens cap and (v) dice both the submount and the interdam connection. In the light source of Example 37, a purple light emitting LED die is grown on a GaN bulk substrate.</p><p> In the method of Example 38, by forming a small number of scattering centers in the white light transparent dam material, the appearance of the light source when off is improved and / or the emission pattern is changed. In the method of Example 38, a purple light emitting LED die is individually coated with a conformal light emitting material layer and then a white light transparent dam is placed.</p><p> In the method of Example 40, white light transparent silicone is applied around the purple LED die coated along the shape and on the dam to generate a lens cap.</p><p> 16A-16I show embodiments of the present disclosure applicable to lighting applications. In these embodiments, one or more light emitting diodes 16A10 can be coated or coated and / or patterned as taught in the present disclosure and mounted in a submount or package for electrical interconnection. To get. The submount or package may be ceramic, oxide, nitride, semiconductor, metal, or a combination thereof, and includes the electrical interconnection function 16A20 of various coated LEDs. The submount or package can be attached to the heat sink member 16B50 via a thermal interface. LEDs can be configured to produce the desired emission spectrum, which can be a mixture of main emission from various LEDs or LED photoexcited wavelength down-converting materials such as phosphors, semiconductors or semiconductor nanoparticles (quantums). It is done by having "dots"), or a combination of any of the above).</p><p> The total light emitting surface (LES) of the LED and some down-converting material can form the light source 16A30. One or more light sources can be interconnected in an array 16B20, then the array 16B20 is electrically contacted with the connector 16B10 and placed in assembly 16B30. One or more lens elements 16B40 may be optically coupled to the light source. Lens designs and characteristics can be selected so that the desired directed light pattern of the lighting product is obtained with a given LES. The directional lighting product may be an LED module, a retrofit lamp 16B70, or a fixed lighting 16C30. In the case of a retrofit lamp, the electronic drive circuit may be provided with a surrounding member 16B60, and the drive circuit adjusts the power from an external power source to make the power suitable for the LED light source. The drive circuit may be incorporated within the retrofit lamp. In the case of a fixed light, an electronic drive circuit is provided that adjusts the power from an external power source to make it suitable for the LED light source, but the drive circuit is built into the fixed light or outside the fixed light. It is provided in. In the case of a module, an electronic drive circuit is provided that adjusts the power from an external power source to make it suitable for an LED light source, but the drive circuit is built in the module or provided outside the module. Examples of suitable external power sources include AC power (eg 120Vrms AC or 240Vrms AC), low voltage AC (eg 12VAC), and low voltage DC (eg 12VDC). For retrofit lamps, the entire lighting product may be designed to meet a standard form factor (eg, ANSI form factor). Examples of retrofit lamp products include LED-based MR16, PAR16, PAR20, PAR30, PAR38, BR30, A19 and various other types of lamps. Examples of fixed luminaires include those used in place of halogen-based and ceramic metal halide-based directional fixed luminaires.</p><p> In some embodiments, the present disclosure can be applied to non-directional lighting applications. In these embodiments, one or more light emitting diodes (LEDs) as taught in the present disclosure can be mounted on a submount or package to obtain electrical interconnection. The submount or package may be, for example, ceramics, oxides, nitrides, semiconductors, metals, or any combination thereof, and includes various LED electrical interconnect functions. The submount or package can be attached to the heat sink member via a thermal interface. These LEDs are made by mixing the main emission from various LEDs or by having an LED photoexcited wavelength down-converting material (eg, a phosphor, semiconductor or semiconductor nanoparticles (quantum dots) or a combination thereof). It can be configured to produce the desired emission spectrum. These LEDs can be distributed to obtain a light source of the desired shape. For example, one common shape is a linear light source that replaces conventional linear fluorescent tube lamps. One or more optics can be connected to the LED to obtain the desired omnidirectional light distribution. Non-directional lighting products may be LED modules, retrofit lamps or fixed lighting. In the case of a retrofit lamp, an electronic drive circuit is provided to adjust the power from an external power source so that the power is suitable for the LED light source. The drive circuit is built into the retrofit lamp. In the case of fixed lighting, an electronic drive circuit is provided to adjust the power from the external power source so that the power is suitable for the LED light source. The drive circuit is installed inside the fixed lighting or outside the fixed lighting. In the case of a module, an electronic drive circuit can be provided to adjust the power from an external power source so that the power is suitable for the LED light source. The drive circuit is installed inside the module or provided outside the module. Examples of external power sources include AC power (eg 120VrmsAC or 240VrmsAC), low voltage AC (eg 12VAC), and low voltage DC (eg 12VDC). .. For retrofit lamps, the entire lighting product may be designed to meet a standard form factor (eg, ANSI form factor). To give an example of retrofit lamp products, there are LED-based alternatives to various straight, circular or curved fluorescent lamps. An example of a non-directional lighting product is shown in Figure 16C. Such fixed luminaires have alternatives to fluorescent-based reflective luminaires. In this embodiment, the LEDs are mechanically integrated into package 16C10, with multiple packages arranged in the appropriate shape (eg, linear array 16C20).</p><p> Some embodiments of the present disclosure can be applied to backlights for flat panel displays. In these embodiments, one or more light emitting diodes (LEDs) may be attached to the submount or package to obtain electrical interconnections, as taught in the present disclosure. The submount or package may be ceramic, oxide, nitride, semiconductor, metal or any combination thereof and includes the electrical interconnection function of various LEDs. The submount or package can be attached to the heat sink member via a thermal interface. These LEDs are made by mixing the main emission from various LEDs or by having an LED photoexcited wavelength down-converting material (eg, a phosphor, semiconductor or semiconductor nanoparticles (quantum dots) or a combination thereof). It can be configured to produce the desired emission spectrum. These LEDs can be distributed to obtain a light source of the desired shape. One common shape is a linear light source. This light source is optically connected to a light guide path for backlight. This can be achieved by optical coupling (edge lighting) to the edge of the light guide path or optical coupling (direct lighting) from behind the light guide path. The light guide path evenly distributes light towards a controllable display device (eg, a liquid crystal display (LCD) panel). The display device electrically controls the light transmission and its color to convert the LED light into a desired image. One color control method is the use of a filter (eg, color filter substrate 16D40). Alternatively, multiple LEDs may be driven in pulse mode to drive the desired primary emission color in sequence (eg, with red LED 16D30, green LED 16D10 and blue LED 16D20). Any brightness enhancing film may be provided in the backlight "stack". The brightness-enhancing film increases the brightness by narrowing the light emission bundle of the flat panel display, but the viewing angle with respect to the screen becomes worse. An electronic drive circuit is provided to adjust the power from an external power source, and the backlight L The power may be suitable for the ED light source. This adjustment involves any change in color order or brightness per LED position (eg, one-dimensional or two-dimensional dimming). Examples of external power sources include AC power (eg 120VrmsAC or 240VrmsAC), low voltage AC (eg 12VAC), and low voltage DC (eg 12VDC). Examples of backlight products are shown in FIGS. 16D1, 16D2, 16E1 and 16E2.</p><p> Some embodiments of the present disclosure can be applied to automotive headlight applications as shown in FIG. 16F (see, for example, the example of automotive headlight product 16F30). In these embodiments, one or more light emitting diodes (LEDs) can be submounted or mounted in a rigid or semi-rigid package 16F10 to obtain electrical interconnection. Submounts or packages are ceramics, oxides, nitrides, semiconductors, metals, or any combination thereof, and include electrical interconnect functions for various LEDs. The submount or package can be attached to the heat sink member via a thermal interface. These LEDs are desired by mixing the main emission from various LEDs or by having an LED photoexcited wavelength down-converting material (eg, a phosphor, semiconductor or semiconductor nanoparticles (quantum dots) or a combination thereof. The total emission surface (LES) of the LED and some down-converting material forms the light source. One or more lens elements 16F20 are optically coupled to the light source. The lens design and characteristics may be selected so that the desired directional light pattern for automotive headlight applications can be obtained with a given LED. An electronic drive circuit can be provided from an external power source. The power can be adjusted to make it suitable for LED light sources. Automotive power supplies include low voltage DC (eg 12VDC). LED light sources have high beam function, low beam function, side beam function or Any combination of these can be realized.</p><p> In some embodiments, the present disclosure can be applied to imaging applications such as flashes for mobile phones and digital still cameras (see, eg, FIG. 16G). In these embodiments, one or more light emitting diodes (LEDs) as taught in the present disclosure can be mounted in a submount or package 16G10 to obtain electrical interconnection. The submount or package may be a ceramic, oxide, nitride, semiconductor, metal, or any combination thereof, and includes the electrical interconnection function of various LEDs. The submount or package may be mounted on a circuit board member and mounted on or inside the mounting package 16G20. These LEDs are made by mixing the main emission from various LEDs or by having an LED photoexcited wavelength down-converting material (eg, a phosphor, semiconductor or semiconductor nanoparticles (quantum dots) or a combination thereof). It can be configured to produce the desired emission spectrum. A light source is formed by the total light emitting surface (LES) of the LED and some down-converting material. One or more lens elements may be optically coupled to the light source. Lens designs and characteristics can be selected to achieve the desired directional light pattern for imaging applications for a given LES. An electronic drive circuit can be provided to adjust the power from an external power source to obtain power suitable for an LED light source. An example of an external power source suitable for imaging applications is low voltage direct current (eg, 5VDC). The LED light source may realize the low-brightness function 16G30, the high-brightness function 16G40, or any combination thereof.</p><p> Some embodiments of the present disclosure can be applied to mobile terminal applications. Figure 16H shows a mobile device (see Smartphone Architecture 16H00). As shown, the smartphone 16H06 includes a housing, a display screen and an interface section. The interface unit may include buttons, a microphone and / or a touch screen. In certain embodiments, the telephone has a high resolution camera unit that can be used in various modes. An example of a smartphone may be an iPhone made by Apple Incorporated (Coupatino, CA, USA). Alternatively, it may be a smartphone such as Samsung Galaxy.</p><p> In one example, the smartphone may include one or more of the following features (these features are found on the Apple Incorporated iPhone 4, but there may be other variants as well): See www.apple.com.</p><p>-GSM model: UMTS / HSDPA / HSUPA (850, 900, 1900, 2100MHz); &amp; # 8232; GSM / EDGE (850, 900, 1800, 1900MHz)-CDMA model: CDMA EV-DO Rev.A (800, 1900MHz) -802.11b / g / n Wi-Fi (802.11n) 2.4GHz only)-Bluetooth 2.1 + EDR wireless technology-Assisted GPS-Digital compass-Wi-Fi-Cellular-Retina display-3.5 inch (diagonal) widescreen multi-touch display-800: 1 contrast ratio (typical)- Maximum brightness 500 cd / m2 (typical)-Fingerprint oil repellent coating on front and back-Supports simultaneous display of multiple languages and characters-5 megapixel iSight camera-30 HD (720p) audio simultaneous video recording up to 30 frames / second -VGA quality stills and videos up to 30 frames per second with front camera-Tap to focus video or stills-LED flash-Add position information for stills and videos-Built-in rechargeable lithium-ion battery-Computer Charging via USB to system or power adapter-Talk time: up to 16 hours on 3G, up to 14 hours on 2G (GSM)-Standby: up to 300 hours-Internet usage: up to 6 hours on 3G, up to 10 on Wi-Fi Time-Video playback: Up to 10 hours-Audio playback: Up to 40 hours-Frequency response: 16Hz ~ 16,000Hz</p><p>-Supported audio formats: AAC (8 ~ 320Kbps), protected AAC (from iTunes Store), HE-AAC, MP3 (8 ~ 320Kbps), MP3VBR, audible (formats 2, 3, 4, audible enhanced audio) , AAX, and AAX +), Apple Lossless, AIFF, and WAV-User-configurable maximum volume limit</p><p>-Supports video output up to 1620p with Apple Digital AV Adapter or Apple VGA Adapter, 576p and 480p with Apple Component AV Cable, 576i and 480i with Apple Composite AV Cable (sold separately)</p><p>-Supported video formats: H.264 video up to 1620p, 30 frames / sec, main profile level 3.1 AAC-LC audio up to 160Kbps, 48kHz, stereo audio (.m4v, .mp4, and .mov file formats) , MPEG-4 video up to 2.5Mbps, 640x480 pixels, 30 frames / sec, simple profile 160Kbps / channel with AAC-LC audio, up to 48kHz, stereo audio (.m4v, .mp4, and .mov file formats) , Motion JPEG (M-JPEG) up to 35Mbps, 1280 x 1620 pixels, 30 frames / sec, audio (ulaw, PCM stereo audio is .avi file format)-3 axis gyro-acceleration sensor-proximity sensor-ambient light sensor- Other</p><p> The embodiments of the present disclosure can be used with other electronic devices. Examples of suitable electronic devices are portable electronic devices (eg, media players, cellular phones, personal digital assistants). In such an embodiment, the portable electronic device may include a combination of features of such a device. In addition, electronic devices allow users to connect and communicate over the Internet or other networks (eg, local area networks or wide area networks). For example, portable electronic devices allow users to access the Internet and communicate using email, text messaging, instant messaging or other forms of electronic communication. For illustrative purposes, the electronic device may be an iPod or iPhone with a display screen released by Apple Incorporated.</p><p> In certain embodiments, the device may be powered by one or more rechargeable and / or replaceable batteries. Such an embodiment is highly portable, allowing the user to carry an electronic device for travel, work, exercise, and the like. In this way, depending on the functionality provided by the electronic device, the user can freely move around with the device while listening to music, playing games or videos, recording or shooting video, making and receiving calls, communicating, etc. Other device operations (eg, via remote control and / or Bluetooth functionality) can be performed. In addition, the device may be sized to fit in a pocket or in the user's hand relatively easily. Although specific embodiments of the present disclosure have been described for portable electronic devices, the techniques of the present disclosure include a wide range of other non-portable electronic devices and systems configured to handle graphical data (eg, desktops). It is also applicable to computers).</p><p> As shown, FIG. 16H is a system diagram including a smartphone with an LED according to an embodiment of the present disclosure. The smartphone 16H06 is configured to communicate with a server 16H02 that electronically communicates with any form of handheld electronic device. Examples of such handheld electronic devices are processor 16H08, memory 16H10, graphics accelerator 16H12, accelerometer 16H14, communication interface 16H11 (which may also include antenna 16H16), compass 16H18, GPS chip 16H20, display screen. Includes functional units such as 16H22 and input unit 16H24. Neither device is limited to these exemplary functional parts. These functional parts may be hardware, software, or a combination of both.</p><p> In some examples, instructions can be input to the handheld electronic device through input 16H24, which directs processor 16H08 to perform various functions in electronic imaging applications. One possible command is to generate thumbnails from images of a part of the user's body. In this case, the processor 16H08 instructs the communication interface 16H11 to communicate with the server 16H02 (eg, via or by using the cloud 16H04) to transfer data (eg, image data). This data is transferred by the communication interface 16H11 and processed by the processor 16H08 immediately after imaging, stored in memory 16H10 and used later, or both. Processor 16H08 also receives information about the attributes of the displayed image, such as data from accelerometer 16H14 and / or other external data (eg, the direction of the compass from compass 16H18, or GPS location information from GPS chip 16H20. ) Can be used to calculate the orientation of the device, and the processor then uses this information to determine the orientation to display the image accordingly.</p><p> The captured image can be processed by processor 16H08, graphics accelerator 16H12 or a combination of the two. In some embodiments, the processor may be the graphics accelerator 16H12. The image may first be stored in memory 16H10, or if possible, the memory may be directly associated with graphics accelerator 16H12. The method described herein can be implemented with a processor 16H08, a graphics accelerator 16H12, or a combination of the two to generate an image and its associated thumbnails. Images or thumbnails may be displayed on the display screen 16H22.</p><p> FIG. 16I shows the interconnection of functional parts within electronic device 16I00. Examples of electronic devices include a housing or housing, a display device, a user input mechanism, and an input / output connection, in addition to the above-mentioned interconnection of functional parts. The housing may be formed from plastics, metals, composites or other suitable materials, or any combination thereof. The housing can protect the internal functional parts of the electronic device from physical damage and also protect the internal functional parts from electromagnetic interference (EMI).</p><p> The display device may be a liquid crystal display (LCD), a light emitting diode (LED) based display, an organic light emitting diode (OLED) based display, or some other suitable display. According to certain embodiments of the present disclosure, the display can display a user interface and various other images (eg, logos, avatars, photographs, album art). Further, in certain embodiments, the display device may include a touch screen that allows the user to interact with the user interface. The display device may also include various functions and / or system displays that provide feedback to the user (eg, power status, call status, memory status). These display units may be included in the user interface displayed on the display unit.</p><p> In certain embodiments, one or more of the user input mechanisms can be configured to control the device by controlling, for example, operating mode, output level, output type, and the like. For example, the user input mechanism may include an on / off switching button for the device. In addition, the user input mechanism allows the user to interact with the user interface on the display device. Examples of portable electronic devices include any number of user input mechanisms, which are buttons, switches, control pads, scroll wheels, or any other suitable input mechanism. The user input mechanism can work with the user interface displayed on the device to control the functionality of the device and / or the functionality of any interface connected to or used by the device. For example, a user input mechanism allows the user to navigate the displayed user interface or return such a displayed user interface to the default screen or home screen.</p><p> A particular device may also include various input and output ports to which another device can be connected. For example, the port may be a headphone jack to which headphones can be connected. In addition, the port may have input / output capabilities for connecting a headset (eg, a combination of headphones and a microphone). Embodiments of the present disclosure may include any number of input and / or output ports. For example, headphone and headset jacks, universal serial bus (USB) ports, IEEE-1394 ports, and AC and / or DC power connectors. In addition, the device may use input and output ports that are connected to any other device (eg, other portable electronic devices, personal computers, printers) to send and receive data. For example, in one embodiment, the device may be connected to a personal computer via an IEEE-1394 connection to send and receive data files (eg, media files).</p><p> The description of electronic device 16I00 encloses a smartphone system diagram according to an embodiment of the present disclosure. The electronic device 16I00 will be described by way of exemplifying the computer hardware, software, and firmware that can be used to realize the above disclosure. The system shown includes processor 16I26, which represents any number of physically and / or logically separate resources, each of which is software, firmware, and hardware configured to perform the desired calculations. Wear can be realized. Processor 16I26 includes a chipset 16I28 capable of controlling input and output to and from processor 16I26. In this example, the chipset 16I28 can output information to the display screen 16I42 and can read and write information to the non-volatile memory 16I44. The non-volatile memory 16I44 may include, for example, magnetic and solid storage media, and / or other semi-fixed storage media. Chi chipset 16I28 can also be write, or read information to RAM16I46. A bridge 16I32 that interfaces with various user interface units can be provided to interface with the chipset 16I28. Such a user interface unit may include a keyboard 16I34, a microphone 16I36, a touch detection / processing circuit 16I38, a pointing device 16I40 (for example, a mouse), and the like. In general, inputs to the system can come from any of a variety of machine-generated and / or human-generated sources.</p><p> The chipset 16I28 can also interface with one or more data network interfaces 16I30 that can have different physical interfaces. Such a data network interface 16I30 may include an interface for wired and wireless local area networks, an interface for wideband wireless networks, and an interface for personal area networks. Some uses of the GUI generation, display and utilization methods disclosed herein include receiving data via physical interface 16I31 or stored in non-volatile memory 16I44 and / or memory or RAM16I46. The processor 16I26, which analyzes the data, may generate the data on the machine itself. In addition, the machine receives inputs from the user via devices such as keyboard 16I34, microphone 16I36, touch detection / processing circuit 16I38 and pointing device 16I40, and uses the processor 16I26 to interpret these inputs for browsing capabilities. It is possible to execute the corresponding function such as.</p><p> FIG. 17 shows an embodiment of the present disclosure applicable to lighting applications. Array 1700 shows lamps classified into several lamp types (eg, lamp series as shown). Some of these various lamps (eg, "A series", "PS series", "B series", "C series") have different lamp bases. Such lamp bases can meet any criteria, some of which are shown in the table below (see Tables 3 and 4).</p><p><tables num="3"><img file="JP2014123738A_D0003.tif" /></tables></p><p> In addition, the lamp base member may be any form factor configured to support electrical connections. These electrical connections may meet either one set of types or standards. For example, Table 4 shows the reference (see Type) and the corresponding characteristics (eg, the mechanical spacing between the first pin (eg, power pin) and the second pin (eg, ground pin). ).</p><p><tables num="4"><img file="JP2014123738A_D0004.tif" /></tables><img file="JP2014123738A_D0005.tif" /><img file="JP2014123738A_D0006.tif" /></p><p> The above list is merely exemplary and should not be considered to include all criteria or form factors available within the scope of the embodiments described herein.</p><p> Finally, it should be noted that there are other ways to implement the disclosed embodiments herein. Therefore, each embodiment should be considered as exemplary rather than restrictive, and the claims should not be limited to the details described herein, but should be modified within that scope and within equality. Is possible.</p>

102 LED Die 104 White Dam 106 Fluorescent Filled Silicone 108 Si or Ceramic Submount 230 photoresist