Manufacturing apparatus of thin film sealing and manufacturing method of thin film sealing
Abstract
Problem to be solved.To provide a thin film sealing manufacturing apparatus and a thin film sealing manufacturing method.
Solution.A thin film encapsulation manufacturing apparatus 100 deposits organic substances on a first cluster 120 in which a first inorganic layer is formed on a display substrate by a sputtering process and a first inorganic layer transferred from the first cluster 120. A second inorganic layer is formed on the second cluster 130, which forms the first organic layer in the process, and the first organic layer transferred from the second cluster 130 in the chemical vapor deposition step or the plasma chemical vapor deposition step. It is equipped with a third cluster 140. [Selection diagram] Fig. 1

Term
7.2 yearsto projected expiry
Projected expiry 12 December 2033, counted from filing; an application has no term until it is granted.
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36 claims: 6 independent, 30 dependent
- 1ディスプレイ基板上にスパッタリング工程で第1無機層を形成する第1クラスタと、 前記第1クラスタから移送された第1無機層上に、有機物蒸着工程で第1有機層を形成する第2クラスタと、 前記第2クラスタから移送された第1有機層上に、化学気相蒸着工程またはプラズマ化学気相蒸着工程で第2無機層を形成する第3クラスタと、を備える薄膜封止の製造装置。
- 2前記第1クラスタ、第2クラスタ及び第3クラスタは、それぞれ複数の工程チャンバを備える請求項1に記載の薄膜封止の製造装置。
- 3前記第1クラスタの工程チャンバ、前記第2クラスタの工程チャンバ及び前記第3クラスタの工程チャンバそれぞれは、一方向に順番が定められ、同順番の各工程チャンバで前記第1無機層、第1有機層及び前記第2無機層がそれぞれ形成される請求項2に記載の薄膜封止の製造装置。
- 4前記第1クラスタ、前記第2クラスタ及び前記第3クラスタのうち少なくとも一つは、マスクを保存するマスク保存チャンバを備える請求項1に記載の薄膜封止の製造装置。
- 5前記第3クラスタに連結されるように設けられ、前記第3クラスタから移送された第2無機層上に、有機物蒸着工程で第2有機層を形成する第4クラスタをさらに備える請求項1に記載の薄膜封止の製造装置。
- 6前記第4クラスタに連結されるように設けられ、前記第4クラスタから移送された第2有機層上に、化学気相蒸着工程またはプラズマ化学気相蒸着工程で第3無機層を形成する第5クラスタをさらに備える請求項5に記載の薄膜封止の製造装置。
- 7前記第2クラスタ及び前記第3クラスタは、交互に設けられる請求項1に記載の薄膜封止の製造装置。
- 8前記第1クラスタ及び前記第2クラスタは、下向き蒸着で前記第1無機層及び前記第1有機層をそれぞれ形成し、前記第3クラスタは、上向き蒸着で前記第2無機層を形成する請求項1に記載の薄膜封止の製造装置。
- 9前記第1クラスタと前記第2クラスタとの間に設けられる前記ディスプレイ基板を移送させる移送チャンバ、及び前記ディスプレイ基板の投入方向を整列するターンモジュールチャンバのうち少なくとも一つをさらに備える請求項1に記載の薄膜封止の製造装置。
- 10前記移送チャンバは複数備えられ、 前記各移送チャンバは前記ターンモジュールチャンバの両側に設けられ、前記第1クラスタ及び前記第2クラスタに連結される請求項9に記載の薄膜封止の製造装置。
- 11前記ディスプレイ基板の移送時、前記第1クラスタと複数の移送チャンバのうち一つ、前記複数の移送チャンバのうち一つと前記ターンモジュールチャンバ、前記ターンモジュールチャンバと前記複数の移送チャンバのうち他の一つ、または前記複数の移送チャンバのうち他の一つと前記第2クラスタは、互いに内部圧力が同じになるように制御される請求項10に記載の薄膜封止の製造装置。
- 12前記第2クラスタと前記第3クラスタとの間に設けられる前記ディスプレイ基板を移送させる移送チャンバ、及び前記ディスプレイ基板の投入方向を整列するターンモジュールチャンバのうち少なくとも一つをさらに備える請求項1に記載の薄膜封止の製造装置。
- 13前記移送チャンバは複数備えられ、 前記各移送チャンバは、前記ターンモジュールチャンバの両側に設けられ、それぞれ前記第2クラスタ及び前記第3クラスタに連結される請求項12に記載の薄膜封止の製造装置。
- 14前記ディスプレイ基板の移送時、前記第2クラスタと前記複数の移送チャンバのうち一つ、前記複数の移送チャンバのうち一つと前記ターンモジュールチャンバ、前記ターンモジュールチャンバと前記複数の移送チャンバのうち他の一つ、または前記複数の移送チャンバのうち他の一つと前記第3クラスタは、互いに内部圧力が同じになるように制御される請求項13に記載の薄膜封止の製造装置。
- 15外部から前記ディスプレイ基板を供給され、前記第1クラスタに前記ディスプレイ基板を供給するローディングクラスタをさらに備える請求項1に記載の薄膜封止の製造装置。
- 16前記第3クラスタに連結され、前記第3クラスタから移送されるディスプレイ基板を外部に搬出するアンローディングクラスタをさらに備える請求項1に記載の薄膜封止の製造装置。
- 17前記アンローディングクラスタは複数のアンローディングチャンバを備え、 前記各アンローディングチャンバは、その内部に前記ディスプレイ基板が存在していないと判断されれば、前記アンローディングクラスタに進入した前記ディスプレイ基板を保存する請求項16に記載の薄膜封止の製造装置。
- 18前記第3クラスタと前記アンローディングクラスタとを連結し、前記第3クラスタから引き出される前記ディスプレイ基板を反転させるターンモジュールチャンバをさらに備える請求項16に記載の薄膜封止の製造装置。
- 19ディスプレイ基板上に第1無機層をスパッタリング工程で形成する段階と、 前記第1無機層上に有機物蒸着工程で第1有機層を形成する段階と、 前記第1有機層上に化学気相蒸着工程またはプラズマ化学気相蒸着工程で第2無機層を形成する段階と、を含む薄膜封止の製造方法。
- 20前記第1有機層を形成した後、前記ディスプレイ基板を反転させた後で前記第2無機層を形成する請求項19に記載の薄膜封止の製造方法。
- 21前記第1無機層、前記第1有機層及び前記第2無機層は、それぞれ複数の工程チャンバを備える第1クラスタ、複数の工程チャンバを備える第2クラスタ及び複数の工程チャンバを備える第3クラスタで形成される請求項19に記載の薄膜封止の製造方法。
- 22前記第1クラスタの工程チャンバ、前記第2クラスタの工程チャンバ及び前記第3クラスタの工程チャンバそれぞれは、一方向に順番が定められ、同順番の各工程チャンバで前記第1無機層、第1有機層及び前記第2無機層がそれぞれ形成される請求項21に記載の薄膜封止の製造方法。
- 23前記第1クラスタ、前記第2クラスタ及び前記第3クラスタのうち少なくとも一つは、マスクを保存するマスク保存チャンバを備える請求項21に記載の薄膜封止の製造方法。
- 24前記第1クラスタと前記第2クラスタとの間に設けられる前記ディスプレイ基板を移送させる移送チャンバ、及び前記ディスプレイ基板の投入方向を整列するターンモジュールチャンバのうち少なくとも一つを通じて、前記第1クラスタから前記第2クラスタへ前記ディスプレイ基板を移送させる請求項21に記載の薄膜封止の製造方法。
- 25前記移送チャンバは複数備えられ、 前記各移送チャンバは、前記ターンモジュールチャンバの両側に設けられ、前記第1クラスタ及び前記第2クラスタに連結される請求項24に記載の薄膜封止の製造方法。
- 26前記ディスプレイ基板の移送時、前記第1クラスタと複数の移送チャンバのうち一つ、前記複数の移送チャンバのうち一つと前記ターンモジュールチャンバ、前記ターンモジュールチャンバと前記複数の移送チャンバのうち他の一つ、または前記複数の移送チャンバのうち他の一つと前記第2クラスタは、互いに内部圧力が同じになるように制御される請求項25に記載の薄膜封止の製造方法。
- 27前記第2クラスタと前記第3クラスタとの間に設けられる前記ディスプレイ基板を移送させる移送チャンバ、及び前記ディスプレイ基板の投入方向を整列するターンモジュールチャンバのうち少なくとも一つを通じて、前記ディスプレイ基板を前記第2クラスタから前記第3クラスタへ移送させる請求項24に記載の薄膜封止の製造方法。
- 28前記移送チャンバは複数備えられ、 前記各移送チャンバは、前記ターンモジュールチャンバの両側に設けられ、それぞれ前記第2クラスタ及び前記第3クラスタに連結される請求項27に記載の薄膜封止の製造方法。
- 29前記ディスプレイ基板の移送時、前記第2クラスタと前記複数の移送チャンバのうち一つ、前記複数の移送チャンバのうち一つと前記ターンモジュールチャンバ、前記ターンモジュールチャンバと前記複数の移送チャンバのうち他の一つ、または前記複数の移送チャンバのうち他の一つと前記第3クラスタは、互いに内部圧力が同じになるように制御される請求項28に記載の薄膜封止の製造方法。
- 30前記第1有機層を形成する段階及び前記第2無機層を形成する段階は、互いに交互に複数回行われる請求項19に記載の薄膜封止の製造方法。
- 31前記第1無機層及び前記第1有機層は下向き蒸着で形成され、前記第2無機層は上向き蒸着で形成される請求項19に記載の薄膜封止の製造方法。
- 32前記第1無機層及び前記第1有機層を形成した後、前記ディスプレイ基板を反転させて前記第2無機層を形成する請求項31に記載の薄膜封止の製造方法。
- 33前記第1無機層の形成段階前に、 ローディングクラスタを通じて外部から前記ディスプレイ基板を供給されて前記第1無機層が形成されるように、前記ディスプレイ基板を供給する段階をさらに含む請求項19に記載の薄膜封止の製造方法。
- 34前記第2無機層の形成段階後に、 前記第2無機層が形成された前記ディスプレイ基板を、アンローディングクラスタを通じて外部に搬出する請求項19に記載の薄膜封止の製造方法。
- 35前記アンローディングクラスタは複数のアンローディングチャンバを備え、 前記各アンローディングチャンバは、その内部に前記ディスプレイ基板が存在していないと判断されれば、前記アンローディングクラスタに進入した前記ディスプレイ基板を保存する請求項34に記載の薄膜封止の製造方法。
- 36前記アンローディングクラスタへの進入前に、前記ディスプレイ基板を反転させて前記アンローディングクラスタに供給する請求項34に記載の薄膜封止の製造方法。
Independent claims36
166 paragraphs, as filed
The present invention relates to a manufacturing apparatus and a manufacturing method, and more particularly to a thin film encapsulation manufacturing apparatus and a thin film encapsulation manufacturing method.
Electronic devices based on mobility are widely used. As mobile electronic devices, tablet PCs have recently been widely used in addition to small electronic devices such as mobile phones.
Such mobile electronic devices include display devices to provide users with visual information such as images or videos to support a variety of functions. Recently, as other parts for driving display devices have become smaller, the specific gravity of display devices in electronic devices is gradually increasing, and we have also developed a structure that can be bent to a predetermined angle in a flat state. Has been done.
In particular, when the display device is flexibly formed as described above, the light emitting portion of the display device can be sealed with a thin film having a plurality of layers in consideration of the life of the display device and the like. At this time, a sealing thin film is formed during the sealing treatment as described above, and the sealing thin film is formed by alternately laminating organic layers and inorganic layers. The organic layer and the inorganic layer forming such a sealing thin film are formed by various methods, respectively.
<p><patcit num="1"><text>Korean Patent No. 10-1055688</text></patcit></p>
<p> An embodiment of the present invention provides a thin film encapsulation manufacturing apparatus and a manufacturing method thereof in which the formation thickness of an organic layer and an inorganic layer can be adjusted and the degree of vacuum of various thin film equipment is kept constant.</p>
<p> One aspect of the present invention is a first cluster that forms a first inorganic layer on a display substrate in a sputtering process, and a first organic layer that is transferred from the first cluster on a first inorganic layer in an organic vapor deposition process. A thin film including a second cluster to be formed and a third cluster for forming a second inorganic layer in a chemical vapor deposition step or a plasma chemical vapor deposition step on the first organic layer transferred from the second cluster. Provided is a sealing manufacturing apparatus.</p><p> Further, the first cluster, the second cluster, and the third cluster each include a plurality of process chambers.</p><p> Further, the process chambers of the first cluster, the process chambers of the second cluster, and the process chambers of the third cluster are ordered in one direction, and the first inorganic layer and the first inorganic layer are used in the process chambers in the same order. 1 An organic layer and the second inorganic layer are formed, respectively.</p><p> In addition, at least one of the first cluster, the second cluster, and the third cluster includes a mask storage chamber for storing masks.</p><p> Further, a fourth cluster which is provided so as to be connected to the third cluster and forms the second organic layer in the organic matter vapor deposition step is further provided on the second inorganic layer transferred from the third cluster.</p><p> Further, a third inorganic layer is formed on the second organic layer transferred from the fourth cluster so as to be connected to the fourth cluster by a chemical vapor deposition step or a plasma chemical vapor deposition step. It also has a fifth cluster.</p><p> Further, the second cluster and the third cluster are alternately provided.</p><p> Further, the first cluster and the second cluster form the first inorganic layer and the first organic layer by downward thin-film deposition, respectively, and the third cluster forms the second inorganic layer by upward thin-film deposition.</p><p> Further, at least one of a transfer chamber for transferring the display board provided between the first cluster and the second cluster and a turn module chamber for aligning the loading directions of the display board is further provided.</p><p> Further, a plurality of the transfer chambers are provided, and each transfer chamber is provided on both sides of the turn module chamber and is connected to the first cluster and the second cluster.</p><p> Further, when the display board is transferred, the first cluster and one of the plurality of transfer chambers, one of the plurality of transfer chambers and the turn module chamber, the turn module chamber and the plurality of transfer chambers, and the like. The second cluster and the other one of the plurality of transfer chambers are controlled so that the internal pressures are the same as each other.</p><p> Further, at least one of a transfer chamber for transferring the display board provided between the second cluster and the third cluster and a turn module chamber for aligning the loading directions of the display board is further provided.</p><p> Further, a plurality of the transfer chambers are provided, and each transfer chamber is provided on both sides of the turn module chamber and is connected to the second cluster and the third cluster, respectively.</p><p> Further, when the display board is transferred, the second cluster and one of the plurality of transfer chambers, one of the plurality of transfer chambers and the turn module chamber, and the turn module chamber and the plurality of transfer chambers. The other one, or the other one of the plurality of transfer chambers, and the third cluster are controlled so that their internal pressures are the same as each other.</p><p> Further, a loading cluster that supplies the display board from the outside and supplies the display board to the first cluster is further provided.</p><p> Further, an unloading cluster that is connected to the third cluster and carries out the display board transferred from the third cluster to the outside is further provided.</p><p> Further, the unloading cluster includes a plurality of unloading chambers, and if it is determined that the display board does not exist inside the unloading chamber, the display board that has entered the unloading cluster can be used. save.</p><p> Further, a turn module chamber for connecting the third cluster and the unloading cluster and inverting the display board drawn from the third cluster is further provided.</p><p> Other aspects of the present invention include a step of forming a first inorganic layer on a display substrate by a sputtering step, a step of forming a first organic layer on the first inorganic layer by an organic vapor deposition step, and the first organic layer. It includes a step of forming a second inorganic layer on the layer by a chemical vapor deposition step or a plasma chemical vapor deposition step.</p><p> Further, after the first organic layer is formed, the display substrate is inverted and then the second inorganic layer is formed.</p><p> Further, the first inorganic layer, the first organic layer and the second inorganic layer each include a first cluster having a plurality of process chambers, a second cluster having a plurality of process chambers, and a third having a plurality of process chambers. Formed in clusters.</p><p> Further, the process chambers of the first cluster, the process chambers of the second cluster, and the process chambers of the third cluster are ordered in one direction, and the first inorganic layer and the first inorganic layer are used in the process chambers in the same order. 1 An organic layer and the second inorganic layer are formed, respectively.</p><p> In addition, at least one of the first cluster, the second cluster, and the third cluster includes a mask storage chamber for storing masks.</p><p> Further, the first cluster is provided through at least one of a transfer chamber for transferring the display board provided between the first cluster and the second cluster and a turn module chamber for aligning the loading directions of the display board. The display board is transferred from the second cluster to the second cluster.</p><p> Further, a plurality of the transfer chambers are provided, and each transfer chamber is provided on both sides of the turn module chamber and is connected to the first cluster and the second cluster.</p><p> Further, when the display board is transferred, the first cluster and one of the plurality of transfer chambers, one of the plurality of transfer chambers and the turn module chamber, the turn module chamber and the plurality of transfer chambers, and the like. The second cluster and the other one of the plurality of transfer chambers are controlled so that the internal pressures are the same as each other.</p><p> Further, the display board is transferred through at least one of a transfer chamber for transferring the display board provided between the second cluster and the third cluster and a turn module chamber for aligning the loading directions of the display board. Transfer from the second cluster to the third cluster.</p><p> Further, a plurality of the transfer chambers are provided, and each transfer chamber is provided on both sides of the turn module chamber and is connected to the second cluster and the third cluster, respectively.</p><p> Further, when the display board is transferred, the second cluster and one of the plurality of transfer chambers, one of the plurality of transfer chambers and the turn module chamber, and the turn module chamber and the plurality of transfer chambers. The other one, or the other one of the plurality of transfer chambers, and the third cluster are controlled so that their internal pressures are the same as each other.</p><p> Further, the step of forming the first organic layer and the step of forming the second inorganic layer are alternately performed a plurality of times.</p><p> Further, the first inorganic layer and the first organic layer are formed by downward vapor deposition, and the second inorganic layer is formed by upward vapor deposition.</p><p> Further, after forming the first inorganic layer and the first organic layer, the display substrate is inverted to form the second inorganic layer.</p><p> Further, a step of supplying the display substrate is further included before the stage of forming the first inorganic layer so that the display substrate is supplied from the outside through the loading cluster to form the first inorganic layer.</p><p> Further, after the stage of forming the second inorganic layer, the display substrate on which the second inorganic layer is formed is carried out through an unloading cluster.</p><p> Further, the unloading cluster includes a plurality of unloading chambers, and if it is determined that the display board does not exist inside the unloading chamber, the display board that has entered the unloading cluster can be used. save.</p><p> Further, before entering the unloading cluster, the display board is inverted and supplied to the unloading cluster.</p>
<p> In the embodiment of the present invention, the thickness of each layer can be controlled at the time of forming a thin film of a plurality of layers in which an organic layer and an inorganic layer are laminated, and the degree of vacuum of various thin film process equipment is controlled by a spatiotemporal divided vacuum control method of plasma chemical vapor deposition. By keeping the same, an inline cluster can be formed. Further, in the embodiment of the present invention, the sputtering, flash vapor deposition, and PECVD steps can be performed in-line by forming an in-line cluster.</p>
<figref num="1">It is a conceptual diagram which shows the manufacturing apparatus of thin film encapsulation by one Embodiment of this invention.</figref><figref num="2">It is sectional drawing which shows the display substrate manufactured by the manufacturing apparatus of thin film encapsulation shown in FIG.</figref><figref num="3">It is a conceptual diagram which shows the manufacturing apparatus of thin film encapsulation by another embodiment of this invention.</figref><figref num="4">It is sectional drawing which shows the display substrate manufactured by the manufacturing apparatus of thin film encapsulation shown in FIG.</figref><figref num="5">It is a conceptual diagram which shows the manufacturing apparatus of thin film sealing by still another Embodiment of this invention.</figref><figref num="6">It is sectional drawing which shows the display substrate manufactured by the manufacturing apparatus of thin film encapsulation shown in FIG.</figref>
The present invention will become clear with reference to embodiments described in detail below with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and is embodied in various forms different from each other. However, the present embodiment completes the disclosure of the present invention and is within the scope of the invention to those skilled in the art. It is provided to fully inform, and the present invention is only defined by the claims. On the other hand, the terms used herein are for the purpose of describing embodiments and are not intended to limit the present invention. In the present specification, the singular type also includes the plural type unless otherwise specified in the wording. As used herein, "comprises, complementing" means the presence or presence of one or more other components, stages, actions and / or elements in the mentioned components, stages, actions and / or elements. Do not rule out additions. Terms such as 1st and 2nd are used to describe various components, but the components should not be limited by terms. The term is used only to distinguish one component from the other.
FIG. 1 is a conceptual diagram showing a thin film encapsulation manufacturing apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a display substrate manufactured by the thin film encapsulation manufacturing apparatus shown in FIG.
With reference to FIGS. 1 and 2, the thin film encapsulation manufacturing apparatus 100 includes a loading cluster 110, a first transfer chamber P1, a first cluster 120, a second transfer chamber P2, a second cluster 130, and a third transfer chamber. It includes P3, 1st turn module chamber T1, 3rd cluster 140, 2nd turn module chamber T2, 4th transfer chamber P4 and unloading cluster 150.
The loading cluster 110 can supply the display board 200 from the outside and supply the display board 200 to the first cluster 120. At this time, the loading cluster 110 includes a loading chamber 112 in which the display board 200 is supplied from the outside and stored. In particular, a plurality of loading chambers 112 are provided, and each of the plurality of loading chambers 112 stores the display board 200. Further, the loading cluster 110 includes a first transfer chamber 111 connected to the loading chamber 112. At this time, the plurality of loading chambers 112 are provided so as to be connected to the first transfer chamber 111, respectively.
On the other hand, the first transfer chamber P1 connects the loading cluster 110 and the first cluster 120. At this time, the first transfer chamber P1 transfers the display board 200 from the loading cluster 110 to the first cluster 120.
The first cluster 120 includes a second transfer chamber 121. Further, the first cluster 120 is connected to the second transfer chamber 121, and includes a first sputtering chamber 122 which is a process chamber for performing a sputtering process. At this time, a plurality of first sputtering chambers 122 are provided, and the plurality of first sputtering chambers 122 are formed so as to be connected to the second transfer chamber 121, respectively. In particular, each first sputtering chamber 122 can carry out a step of depositing the first inorganic layer 231 on the display substrate 200.
The first cluster 120 includes a first mask storage chamber 123 that stores masks required during the sputtering process in addition to the above cases. At this time, the first mask storage chamber 123 stores the mask and then automatically supplies the mask to the first sputtering chamber 122.
On the other hand, the second transfer chamber P2 can connect the first cluster 120 and the second cluster 130, and transfers the display board 200 of the first cluster 120 to the second cluster 130.
The second cluster 130 includes a third transfer chamber 131 that temporarily stores the display board 200 transferred through the second transfer chamber P2. Further, the second cluster 130 includes a first monomer vapor deposition chamber 132, which is a process chamber that is connected to the third transfer chamber 131 to perform a monomer vapor deposition process of organic matter vapor deposition. At this time, a plurality of first monomer vapor deposition chambers 132 are provided, and each first monomer vapor deposition chamber 132 is radially connected to the third transfer chamber 131. In particular, in the first monomer vapor deposition chamber 132, the first organic layer 232 is formed on the first inorganic layer 231.
The second cluster 130 includes a second mask storage chamber 133 that stores the required masks in each first monomer deposition chamber 132. At this time, the second mask storage chamber 133 stores a plurality of masks and then supplies the necessary masks in each first monomer vapor deposition chamber 132.
On the other hand, a third transfer chamber P3 and a first turn module chamber T1 are provided between the second cluster 130 and the third cluster 140. At this time, the third transfer chamber P3 transfers the display board 200 from the second cluster 130 to the first turn module chamber T1, and the first turn module chamber T1 is formed in a flip chamber shape to align the display board 200. Invert while. In particular, in the first turn module chamber T1, the display substrate 200 is provided so that upward vapor deposition can be performed by performing downward vapor deposition in the first cluster 120 and the second cluster 130, then inversion and supplying the third cluster 140. prepare.
The third cluster 140 includes a fourth transfer chamber 141 connected to the first turn module chamber T1. At this time, the fourth transfer chamber 141 is provided with a first chemical vapor phase chamber 142, which is a process chamber for laminating the second inorganic layer 233. In particular, a plurality of first chemical vapor phase chambers 142 are provided, and the plurality of first chemical vapor phase chambers 142 are provided in the fourth transfer chamber 141 radially separated from each other for a certain period of time.
On the first chemical vapor deposition chamber 142 as described above, the second inorganic layer 233 is formed through a general chemical vapor deposition step, or the second inorganic layer 233 is formed through a plasma chemical vapor deposition step. However, for convenience of explanation, the case where the second inorganic layer 233 is formed inside the first chemical vapor phase chamber 142 through a general chemical vapor deposition step will be described in detail below.
The third cluster 140 is provided to be connected to the fourth transfer chamber 141 and includes a third mask storage chamber 143 that supplies the masks required by the first chemical vapor phase chamber 142. At this time, the third mask storage chamber 143 stores the mask required for the process and then supplies the mask to each first chemical vapor phase chamber 142 in which the process is performed.
On the other hand, the second turn module chamber T2 is connected to the third cluster 140 formed as described above. In particular, the second turn module chamber T2 is connected to the fourth transfer chamber 141, and the display board 200 for which the process has been completed is inverted and transferred. Specifically, the second turn module chamber T2 is formed by a flip chamber similar to the first turn module chamber T1 described above.
The fourth transfer chamber P4 is connected to the second turn module chamber T2. The fourth transfer chamber P4 transfers the display substrate 200 that has completed the thin film sealing process to the unloading cluster 150.
The unloading cluster 150 includes a fifth transfer chamber 151. Further, the unloading cluster 150 includes an unloading chamber 152 that is connected to the fifth transfer chamber 151 and carries out the display board 200 transferred from the fifth transfer chamber 151 to the outside. At this time, a plurality of unloading chambers 152 are provided, and the plurality of unloading chambers 152 are radially provided in the fifth transfer chamber 151.
On the other hand, in the following, the method of performing the thin film sealing step through the thin film sealing manufacturing apparatus 100 and the structure of the display substrate 200 will be described in detail.
First, the display board 200 can be manufactured. Specifically, the display board 200 includes a first board 210, a sealing unit 230, and a light emitting unit 220.
The light emitting portion 220 is formed on the first substrate 210. At this time, the light emitting unit 220 is provided with a thin film transistor (TFT), a passivation film 221 is formed so as to cover the thin film transistor (TFT), and an organic light emitting element (OLED) 228 is formed on the passivation film 221.
A glass material can be used for the first substrate 210, but the material is not necessarily limited to this, and a plastic material or a metal material such as SUS or Ti may be used.
A buffer layer 222 made of an organic compound and / or an inorganic compound is further formed on the upper surface of the first substrate 210, but it can be formed of SiOx (x 1) and SiNx (x 1).
After the active layer 223 arranged in a predetermined pattern is formed on the buffer layer 222, the active layer 223 is reclaimed by the gate insulating layer 224. The active layer 223 has a source region 223a and a drain region 223c, and further includes a channel region 223b in between. At this time, the active layer 223 is formed of amorphous silicon, but is not necessarily limited to this, and is formed of an oxide semiconductor. For example, oxide semiconductors are groups 12, 13, 14 such as zinc (Zn), indium (In), gallium (Ga), tin (Sn) cadmium (Cd), germanium (Ge), or hafnium (Hf). Includes oxides of metal elements and substances selected from combinations thereof. For example, the active layer 223 formed of a semiconductor has GIZO [(In).<sub>2</sub>O<sub>3</sub>)<sub>a</sub>(Ga<sub>2</sub>O<sub>3</sub>)<sub>b b</sub>(ZnO)<sub>c</sub>] (A, b, and c are real numbers satisfying the conditions of a 0, b 0, and c> 0, respectively). However, in the following, for convenience of explanation, the case where the active layer 223 is formed of amorphous silicon will be described in detail.
Such an active layer 223 is formed by forming an amorphous silicon film on the buffer layer 222, crystallizing the amorphous silicon film, forming the polycrystalline silicon film, and patterning the polycrystalline silicon film. The source and drain regions 223a and 223c of the active layer 223 are doped with impurities depending on the type of TFT such as a driving TFT (not shown) and a switching TFT (not shown).
On the upper surface of the gate insulating layer 224, a gate electrode 225 corresponding to the active layer 223 and an interfloor insulating layer 226 to fill the gate electrode 225 are formed.
Then, after forming contact holes in the interfloor insulating layer 226 and the gate insulating layer 224, the source electrode 227a and the drain electrode 227b are contacted on the interfloor insulating layer 226 so as to be in contact with the source region 223a and the drain region 223c, respectively. Form.
On the other hand, since the reflection film is formed at the same time as the source / drain electrodes 227a and 227b as described above, the source / drain electrodes 227a and 227b are made of a material having good electrical conductivity and have a thickness capable of reflecting light. Is desirable. It is preferably composed of metal materials such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca and compounds thereof.
A passivation film 221 is formed on the upper part of the thin film transistor and the reflective film thus formed, and a pixel electrode 228a of an organic light emitting element (OLED) 228 is formed on the upper part of the passivation film 221. The pixel electrode 228a is contacted with the drain electrode 227b of the TFT by the via hole H2 formed in the passivation film 221. The passivation film 221 is formed of an inorganic substance and / or an organic substance, a single layer or two or more layers, and may be formed of a flattening film so that the upper surface is flat regardless of the bending of the lower film, while the lower surface is formed. It is formed so as to bend along the bending of the membrane located at. The passivation film 221 is preferably formed of a transparent insulator so as to exert a resonance effect.
After the pixel electrode 228a is formed on the passivation film 221, the pixel definition film 229 is formed of an organic substance and / or an inorganic substance so as to cover the pixel electrode 228a and the passivation film 221, and the pixel electrode 228a is opened so as to be exposed. Will be done.
Then, the organic layer 228b and the counter electrode 228c are formed on at least the pixel electrode 228a.
The pixel electrode 228a functions as an anode electrode, and the counter electrode 228c functions as a cathode electrode. Of course, the polarities of the pixel electrode 228a and the counter electrode 228c may be reversed.
The pixel electrode 228a is made of a material with a high work function, but is made of a transparent conductor such as ITO, IZO, In2O3, and ZnO.
The counter electrode 228c is made of a metal material such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca and compounds having a low work function, such as Mg, Ag, Al and the like. It is thinly formed so as to be a semi-transmissive reflective film, and is transmitted through optical resonance.
The pixel electrode 228a and the counter electrode 228c are insulated from each other by the organic layer 228b, and voltages having different polarities are applied to the organic layer 228b to cause the organic layer 228b to emit light.
For the organic layer 228b, a low molecular weight or high molecular weight organic film is used. When using a low molecular weight organic film, a hole injection layer (HIL), a hole transport layer (HTL), an organic light emitting layer (EML: Emission Layer), and an electron transport layer (ETL: Electron Transport) are used. Layers, electron injection layers (EILs), etc. are laminated in a single or composite structure, and the organic materials that can be used are copper phthalocyanine (CuPc), N, N-di (CuPc: copper phthalocyanine). It can be applied in various ways such as naphthalene-1-yl) -N, N'-diphenyl-benzidine (NPB) and tris-8-hydroxyquinoline aluminum (Alq3). These low molecular weight organic films are formed by a vacuum vapor deposition method. At this time, the hole injection layer, the hole transport layer, the electron transport layer, the electron injection layer, and the like are common layers, and are commonly applied to the red, green, and blue pixels. Therefore, these common layers are formed so as to cover the entire pixel like the counter electrode 228c.
In the case of a polymer organic film, it has a structure provided by a substantially hole transport layer (HTL) and an organic light emitting layer (EML). At this time, PEDOT is used as the hole transport layer and PPV is used as the organic light emitting layer. High molecular weight organic substances such as (Poly-Phenylene vinylene) and porlifluorene are used, and these are formed by screen printing, inkjet printing methods, fine metal masking processes, laser thermal transfer processes, and the like.
On the other hand, the organic light emitting layer as described above is formed in various forms. For example, a blue organic light emitting layer, a green organic light emitting layer, and a red organic light emitting layer are formed in each subpixel to form one unit pixel. In addition to forming the blue organic light emitting layer, the green organic light emitting layer, and the red organic light emitting layer as described above, it is also possible to form organic light emitting layers of other colors in subpixels. In particular, in addition to the blue organic light emitting layer, the green organic light emitting layer, and the red organic light emitting layer, the blue organic light emitting layer, the green organic light emitting layer, and the red organic light emitting layer are laminated to form the white organic light emitting layer into subpixels. It can also be formed into one unit pixel.
Not only that, in the above-described embodiment, the case where a separate luminescent substance is formed for each pixel in the organic light emitting layer has been described, but the present invention is not limited to this. The organic light emitting layer is commonly formed on all pixels regardless of the pixel position. At this time, the organic light emitting layer is formed, for example, by vertically laminating or mixing layers containing a light emitting substance that emits red, green, and blue light. Of course, it goes without saying that other color combinations are possible as long as they can emit white light. Further, a color conversion layer and a color filter for converting the emitted white light into a predetermined color are further provided.
At this time, the organic layer 228b as described above is not necessarily limited to this, and it goes without saying that various embodiments can be applied. However, for convenience of explanation, the case where the blue organic light emitting layer, the green organic light emitting layer, and the red organic light emitting layer are formed into subpixels to form one unit pixel will be described in detail below.
On the other hand, after preparing the first substrate 210 on which the light emitting portion 220 is formed as described above, the first substrate 210 is brought into the thin film sealing manufacturing apparatus 100 to form the sealing portion 230. At this time, as described above, the sealing portion 230 is formed by sequentially laminating the first inorganic layer 231 and the first organic layer 232 and the second inorganic layer 233.
Specifically, the first organic layer 232 is a single or laminated film formed of a polymer, preferably one of polyethylene terephthalate, polyimide, polycarbonate, epoxy, polyethylene and polyacrylate. .. More preferably, the first organic layer 232 is formed of polyacrylate, and specifically includes a polymerized monomer composition containing a diacrylate-based monomer and a triacrylate-based monomer. The monomer composition further contains a monoacrylate-based monomer. Further, the monomer composition further contains, but is not limited to, a known photoinitiator such as TPO.
The first inorganic layer 231 and the second inorganic layer 233 can be a single film or a laminated film containing a metal oxide or a metal nitride. Specifically, the first inorganic layer 231 and the second inorganic layer 233 are SiNx, Al.<sub>2</sub>O<sub>3</sub>, SiO<sub>2</sub>, TiO<sub>2</sub>Including any one of them. At this time, the second inorganic layer 233 is formed so as to prevent moisture permeation to the light emitting portion 220.
On the other hand, a metal halide layer containing LiF is further contained between the light emitting unit 220 and the first inorganic layer 231. The metal halide layer prevents damage to the light emitting portion 220 when the first inorganic layer 231 is formed in the sputtering step.
Further, the first organic layer 232 is characterized in that the area is smaller than that of the second inorganic layer 233. At this time, the first organic layer 232 is completely covered with the second inorganic layer 233.
Examining the method for forming the sealing portion 230 as described above, first, the first substrate 210 on which the light emitting portion 220 is formed is charged into the loading chamber 112. At this time, the charging method can be various methods. Specifically, after loading the first substrate 210 on which the light emitting unit 220 is formed on the cassette, the cassette is charged into the loading chamber 112. Further, a transfer unit such as an external robot arm supplies the first substrate 210 on which the light emitting unit 220 is formed to the loading chamber 112.
On the other hand, the first substrate 210 supplied as described above is supplied from the loading chamber 112 to the first transfer chamber 111. At this time, a robot arm or the like is provided in the first transfer chamber 111 to move the first substrate 210. In particular, when the first substrate 210 is transferred from the loading chamber 112 to the first transfer chamber 111 as described above, the transfer is performed after controlling the pressures of the loading chamber 112 and the first transfer chamber 111 so as to match before the transfer. Let me.
The first substrate 210 transferred to the first transfer chamber 111 as described above is transferred from the first transfer chamber 111 to the first transfer chamber P1 again. At this time, when the first substrate 210 is transferred, the internal pressure between the first transfer chamber 111 and the first transfer chamber P1 is controlled to be constant.
The first transfer chamber P1 transfers the first substrate 210 to the second transfer chamber 121 of the first cluster 120 again. At this time, when the first substrate 210 is transferred, the internal pressure between the first transfer chamber P1 and the second transfer chamber 121 is maintained constant.
The first substrate 210 transferred as described above is charged from the second transfer chamber 121 into one of the plurality of first sputtering chambers 122. At this time, the order in which the first substrate 210 is charged into the first sputtering chamber 122 may be the default. For example, the plurality of first sputtering chambers 122 are ordered in one direction. Further, each first sputtering chamber 122 is given an ID. At this time, the method for determining the order of the plurality of first sputtering chambers 122 is not limited to the above, and various methods are set. However, in the following, the order will be described in detail mainly in the case where the order is determined in one direction for the convenience of explanation.
The first substrate 210 is charged into the first sputtering chamber 122 whose order is determined as described above by an ID assigned to the first substrate 210 or the like. In particular, the first substrate 210 enters the first sputtering chamber 122 so that the ID given to the first substrate 210 and the order of the first sputtering chamber 122 match.
On the other hand, when the first inorganic layer 231 is formed through the sputtering step as described above, the mask used in the sputtering step is transferred from the first mask storage chamber 123 to the first sputtering chamber 122 in which the sputtering step is performed. At this time, the mask enters at least one of the plurality of first mask storage chambers 123, respectively. In particular, the order in which the masks are inserted may be transferred in advance to the first sputtering chamber 122 in which the sputtering process is performed, or may be transferred before the first substrate 210 is inserted. Further, the mask may enter at the same time as the first substrate 210 without being limited to the above.
On the other hand, after the first substrate 210 has entered the first sputtering chamber 122, the first sputtering chamber 122 forms the first inorganic layer 231 on the light emitting portion 220. At this time, since the first inorganic layer 231 is as described above, detailed description thereof will be omitted.
When the formation of the first inorganic layer 231 is completed as described above, the first substrate 210 is transferred from the first sputtering chamber 122 to the second transfer chamber 121. At this time, the pressures of the first sputtering chamber 122 and the second transfer chamber 121 are controlled to be the same.
The second transfer chamber 121 transfers the first substrate 210 on which the first inorganic layer 231 is formed to the second transfer chamber P2. At this time, the method of transfer is to transfer through a robot arm or the like. In particular, the second transfer chamber 121 and the second transfer chamber P2 transfer the first substrate 210 from the second transfer chamber 121 to the second transfer chamber P2 while maintaining the same internal pressure.
On the other hand, the first substrate 210 transferred as described above is transferred to the second cluster 130. At this time, the first substrate 210 is transferred to the third transfer chamber 131 connected to the second transfer chamber P2, and the pressures of the second transfer chamber P2 and the third transfer chamber 131 are the same when the first substrate 210 is transferred. It is maintained to be.
The first substrate 210 transferred to the third transfer chamber 131 as described above is transferred from the third transfer chamber 131 to the first monomer vapor deposition chamber 132. At this time, the method of transferring the first substrate 210 to one of the plurality of first monomer vapor deposition chambers 132 is the method of transferring the first substrate 210 to one of the plurality of first sputtering chambers 122 described above. Is similar to. In particular, the plurality of first monomer vapor deposition chambers 132 are set to be ordered in the same order as the plurality of first sputtering chambers 122.
The third transfer chamber 131 and the first monomer deposition chamber 132 are set to maintain the same pressure as each other. The first monomer deposition chamber 132 forms the first organic layer 232 on the first inorganic layer 231. Specifically, if the first substrate 210 is charged inside the first monomer vapor deposition chamber 132, the monomer (monomer) and the photoinitiator that are polymerized when UV or heat is applied are passed through a flash evaporator. Evaporate.
When the process is completed, the monomer is polymerized by applying UV or heat to the surface on which the monomer is vapor-deposited and cured to form a polymer-like first organic layer 232. In particular, since the first organic layer 232 is as described above, detailed description thereof will be omitted.
At this time, in the case of the mask used for forming the first organic layer 232, it is supplied to the first monomer vapor deposition chamber 132 in a state of being stored in the second mask storage chamber 133. At this time, the method of supplying the mask from the second mask storage chamber 133 to the first monomer vapor deposition chamber 132 is similar to the method of supplying the mask from the first mask storage chamber 123 to the first sputtering chamber 122 described above. , Detailed explanation is omitted.
On the other hand, the first substrate 210 that has been moved to the third transfer chamber 131 after forming the first organic layer 232 on the first inorganic layer 231 as described above moves from the third transfer chamber 131 to the third transfer chamber P3 again. Be transferred. At this time, when the first substrate 210 is transferred, the internal pressures of the third transfer chamber 131 and the third transfer chamber P3 are controlled to be the same.
When the above process is completed, the first substrate 210 is supplied from the third transfer chamber 131 to the first turn module chamber T1. At this time, the first turn module chamber T1 inverts the first substrate 210 by 180 °. Specifically, in the case of the first cluster 120 and the second cluster 130, it is a downward vapor deposition method in which the first inorganic layer 231 and the first organic layer 232 are vapor-deposited by moving the vapor-deposited material from the lower side to the upper side, respectively. In the case of cluster 140, since the second inorganic layer 233 is an upward vapor deposition method in which the vapor-deposited material is moved from the upper side to the lower side for vapor deposition, the first substrate 210 is inverted by 180 ° for upward vapor deposition.
After inverting the first substrate 210 in the first turn module chamber T1 as described above, the first substrate 210 is supplied to the fourth transfer chamber 141. At this time, the first turn module chamber T1 and the fourth transfer chamber 141 are formed so that their internal pressures are the same.
On the other hand, the first substrate 210 transferred to the fourth transfer chamber 141 is transferred to the first chemical vapor phase chamber 142 again. At this time, the fourth transfer chamber 141 and the first chemical vapor phase chamber 142 are controlled so that their internal pressures are the same.
When the second inorganic layer 233 is vapor-deposited as described above, the mask required in the first chemical vapor phase chamber 142 is supplied from the third mask storage chamber 143. At this time, since the operation of the third mask storage chamber 143 is similar to that of the first mask storage chamber 123 or the second mask storage chamber 133, detailed description thereof will be omitted.
On the other hand, when the vapor deposition of the second inorganic layer 233 is completed as described above, the display board 200 having the sealing portion 230 formed is transferred from the fourth transfer chamber 141 to the second turn module chamber T2. At this time, the second turn module chamber T2 returns to the original state by reversing the display board 200 by 180 ° again.
After being restored to the original state as described above, the display board 200 is transferred from the second turn module chamber T2 to the fifth transfer chamber 151 through the fourth transfer chamber P4. At this time, when the transfer is performed from the 4th transfer chamber P4 to the 5th transfer chamber 151, the transfer is performed while maintaining the same internal pressure between the 2nd turn module chamber T2 and the 4th transfer chamber P4, and then the transfer is performed. 4 Maintain the same internal pressure between the transfer chamber P4 and the 5th transfer chamber 151, and finally transfer to the 5th transfer chamber 151.
When the above process is completed, the formation of the sealing portion 230 in the light emitting portion 220 is completed to manufacture the display substrate 200. The display board 200 manufactured as described above is charged into the unloading chamber 152 from the fifth transfer chamber 151 and stored. At this time, the display board 200 is transferred to the fifth transfer chamber 151 and the unloading chamber 152 in a state where the internal pressures are controlled to be the same.
On the other hand, there are various methods for charging the completed display board 200 into the unloading chamber 152 as described above. For example, if the unloading chamber 152 is already set in order and controlled, and one display board 200 is charged in one randomly selected unloading chamber 152, the display board 200 is charged in the other unloading chamber 152. Can also be controlled to store. Further, one display board 200 is stored in the unloading chamber 152, and if it is determined that there is no display board 200, the display board 200 can be randomly transferred from the fifth transfer chamber 151.
Therefore, since the thin film encapsulation manufacturing apparatus 100 as described above can perform the in-line operation in the thin film encapsulation step, the time required for the thin film encapsulation step is optimized.
Further, the thin film encapsulation manufacturing apparatus 100 can control the thickness of each layer at the time of forming the multi-layer thin film encapsulation, and can simultaneously perform the upward film formation and the downward film formation, so that the multi-layer thin film encapsulation can be easily formed. it can.
In particular, the thin film encapsulation manufacturing apparatus 100 includes the loading cluster 110 and the unloading cluster 150 to form the thin film encapsulation on one line and increase the productivity.
FIG. 3 is a conceptual diagram showing a thin film encapsulation manufacturing apparatus 300 according to another embodiment of the present invention. FIG. 4 is a cross-sectional view showing a display substrate 400 manufactured by the thin film encapsulation manufacturing apparatus 300 shown in FIG.
With reference to FIGS. 3 and 4, the loading cluster (not shown), the first transfer chamber P1, the first cluster 320, the second transfer chamber P2, the first turn module chamber T1, the third transfer chamber P3, the first. 2 cluster 330, 4th transfer chamber P4, 2nd turn module chamber T2, 5th transfer chamber P5, 3rd cluster 340, 6th transfer chamber P6, 3rd turn module chamber T3, 7th transfer chamber P7, 4th cluster 360, 8th Transfer Chamber P8, 4th Turn Module Chamber T4, 9th Transfer Chamber P9, 5th Cluster 370, 10th Transfer Chamber P10, 5th Turn Module Chamber T5, 11th Transfer Chamber P11 and Unloading Cluster (Figure) Not shown).
At this time, the first transfer chamber P1 to the eleventh transfer chamber P11 are formed in the same manner or similar to the first transfer chamber P1 to the fourth transfer chamber P4 described with reference to FIGS. Since the display board 400 can be transferred by the above, detailed description thereof will be omitted below.
Further, the first turn module chamber T1 to the fifth turn module chamber T5 are formed to be the same as or similar to the first turn module chamber T1 and the second turn module chamber T2 described with reference to FIGS. 1 and 2, and are the same or the same. Since the display board 400 can be aligned or inverted and transferred in a similar manner, detailed description thereof will be omitted below.
On the other hand, in the case of the loading cluster and the unloading cluster, since they are formed as described in FIGS. 1 and 2, detailed description thereof will be omitted below. Further, since the loading cluster and the unloading cluster are provided or not provided in the thin film encapsulation manufacturing apparatus 300, the following, for convenience of explanation, the case where the loading cluster and the unloading cluster are not provided. Will be explained in detail.
The first cluster 320 includes a second transfer chamber 321, a first sputtering chamber 322, and a first mask storage chamber 323. At this time, since the first cluster 320 is formed as or similar to that described with reference to FIGS. 1 and 2, detailed description thereof will be omitted.
The second cluster 330 also includes a third transfer chamber 331, a first monomer deposition chamber 332 and a second mask storage chamber 333. At this time, since the second cluster 330 is formed as or similar to that described with reference to FIGS. 1 and 2, detailed description thereof will be omitted.
The third cluster 340 includes a fourth transfer chamber 341, a first chemical vapor phase chamber 342, and a third mask storage chamber 343. At this time, since the third cluster 340 is formed as or similar to that described with reference to FIGS. 1 and 2, detailed description thereof will be omitted. However, for convenience of explanation, the case where the second inorganic layer 433 is formed by the plasma chemical vapor deposition step in the first chemical vapor phase chamber 342 will be described in detail below.
On the other hand, the fourth cluster 360 includes a sixth transfer chamber 361, a second monomer deposition chamber 362, and a fourth mask storage chamber 363. At this time, the fourth cluster 360 forms the second organic layer 434 on the second inorganic layer 433. In particular, since the fourth cluster 360 is formed similar to the second cluster 330 and the second organic layer 434 is formed in the same manner as the first organic layer 432, detailed description thereof will be omitted.
The fifth cluster 370 includes a seventh transfer chamber 371, a second chemical vapor phase chamber 372, and a fifth mask storage chamber 373. At this time, the fifth cluster 370 forms the third inorganic layer 435 on the second organic layer 434. In particular, since the fifth cluster 370 is formed in the same manner as the third cluster 340 and the third inorganic layer 435 is formed in the same manner as the second inorganic layer 433, detailed description thereof will be omitted.
On the other hand, in the following, the method of performing the thin film sealing step by the thin film sealing manufacturing apparatus 300 and the structure of the display substrate 400 will be described in detail.
First, the display board 400 is manufactured. Specifically, the display board 400 includes a first board 410, a sealing unit 430, and a light emitting unit 420. At this time, since the first substrate 410 and the light emitting unit 420 are the same as the first substrate 210 and the light emitting unit 220 described with reference to FIGS. 1 and 2, detailed description thereof will be omitted.
On the other hand, after preparing the first substrate 410 on which the light emitting portion 420 is formed as described above, the first substrate 410 is charged into the thin film sealing manufacturing apparatus 300 to form the sealing portion 430. At this time, the sealing portion 430 includes at least one sandwich structure in which at least one organic layer is inserted between at least two inorganic layers. Further, the sealing portion 430 includes at least one sandwich structure in which at least one inorganic layer is inserted between at least two organic layers.
In particular, the sealing portion 430 is formed by sequentially laminating the first inorganic layer 431, the first organic layer 432, the second inorganic layer 433, the second organic layer 434, and the third inorganic layer 435 as described above.
Specifically, the first organic layer 432 and the second organic layer 434 are formed of a polymer, and preferably a single formed of any one of polyethylene terephthalate, polyimide, polycarbonate, epoxy, polyethylene and polyacrylate. It can be a membrane or a laminated membrane. More preferably, the first organic layer 432 and the second organic layer 434 are formed of polyacrylate, and specifically, a monomer composition containing a diacrylate-based monomer and a triacrylate-based monomer is polymerized. Including. The monomer composition further contains a monoacrylate-based monomer. Further, the monomer composition further contains, but is not limited to, a known photoinitiator such as TPO.
The first inorganic layer 431 to the third inorganic layer 435 are a single film or a laminated film containing a metal oxide or a metal nitride. Specifically, the first inorganic layer 431 to the third inorganic layer 435 are SiNx, Al.<sub>2</sub>O<sub>3</sub>, SiO<sub>2</sub>, TiO<sub>2</sub>Including any one of them. At this time, the third inorganic layer 435 is formed so as to prevent moisture permeation to the light emitting portion 420.
On the other hand, a metal halide layer containing LiF is further contained between the light emitting unit 420 and the first inorganic layer 431. The metal halide layer prevents damage to the light emitting portion 420 when the first inorganic layer 431 is formed in the sputtering step.
Further, the first organic layer 432 is characterized in that the area is smaller than that of the second inorganic layer 433, and the area of the second organic layer 434 is also smaller than that of the third inorganic layer 435. Further, the first organic layer 432 is completely covered by the second inorganic layer 433, and the second organic layer 434 is also completely covered by the third inorganic layer 435.
Explaining the method of forming the sealing portion 430 as described above, the overall vacuum degree of the thin film sealing manufacturing apparatus 300 is 5 × 10.<sup>-4</sup>After maintaining below Pa, the masks in each of the 1st mask storage chamber 323 to the 5th mask storage chamber 373 are changed to the 1st sputtering chamber 322, the 1st monomer vapor deposition chamber 332, the 1st chemical vapor deposition chamber 342, and the 2nd monomer, respectively. After moving inside the vapor deposition chamber 362 and the second chemical vapor deposition chamber 372 using a robot arm, the chambers are mounted inside each chamber.
When the above process is completed, the first substrate 410 on which the light emitting portion 420 is formed is mounted on the first transfer chamber P1, the degree of vacuum is maintained the same as that of the second transfer chamber 321, and then the gate valve is opened. The first substrate 410 is moved to the second transfer chamber 321. At this time, the first substrate 410 is moved by using a robot.
On the other hand, if the degree of vacuum of one of the second conveying chamber 321 and the first sputtering chamber 322 that performs the sputtering step of forming the first inorganic layer 431 becomes the same, the gate valve is opened and the first substrate 410 is used. 1 Move to sputtering chamber 322. After the first board 410 is mounted between the mask already mounted and the board holder, precision alignment is performed by utilizing the mark of the first board 410 and the open mark of the mask by the aligning device to which the vision is connected. After that, the first substrate 410 and the mask are joined together.
On the other hand, inside the first sputtering chamber 322, a process gas for the sputtering process is injected to reduce the degree of vacuum to 1 × 10.<sup>-1</sup>~1×10<sup>-2</sup>After maintaining Pa, an electrode is applied to the cathode to form a plasma discharge. At this time, the film forming process is performed while transferring the first substrate 410 or the cathode inside the first sputtering chamber 322.
If the target thickness of the first inorganic layer 431 is reached while the above process is in progress, the discharge is stopped after moving the first substrate 410 or the cathode to the waiting region, and the injection of the process gas is stopped. The conductance of the vacuum exhaust system is controlled to maintain the degree of vacuum at the same level as that of the second transfer chamber 321. At this time, the first substrate 410 and the mask are detached and moved to a position where the first substrate 410 can be discharged.
When the above process is completed, the first substrate 410 is moved from the first sputtering chamber 322 to the second transfer chamber 321. Further, when the degree of vacuum of the second transfer chamber 321 and the second transfer chamber P2 becomes the same, the first substrate 410 is moved from the second transfer chamber 321 to the second transfer chamber P2.
If the degree of vacuum between the second transfer chamber P2 and the first turn module chamber T1 becomes the same, the first substrate 410 is moved to the first turn module chamber T1, and the first substrate 410 is 180 in the first turn module chamber T1. Rotate ° to prevent changes in the loading position of the first substrate 410.
On the other hand, when the operation of the first turn module chamber T1 is completed as described above, the first substrate 410 is controlled to have the same degree of vacuum between the first turn module chamber T1 and the third transfer chamber P3. 3 Move to transfer chamber P3.
At this time, after maintaining the same degree of vacuum between the third transfer chamber P3 and the third transfer chamber 331, the gate valve is opened to move the first substrate 410 to the third transfer chamber 331. At this time, the robot is used to move the first substrate 410.
When the above process is completed, if the degree of vacuum of the third transfer chamber 331 and one of the plurality of first monomer vapor deposition chambers 332, which is the organic matter vapor deposition step for forming the first organic layer 432, becomes the same, the gate valve To move the first substrate 410 to the first monomer deposition chamber 332. At this time, the first board 410 is precisely mounted between the mask already mounted and the board holder, and then the mark of the first board 410 and the open mark of the mask are utilized by the aligning device to which the vision is connected. After aligning, the first substrate 410 and the mask are joined together.
The inside of the first monomer vapor deposition chamber 332 where the organic matter vapor deposition process is performed as described above is gas-injected in the step for the organic matter vapor deposition process to reduce the degree of vacuum to 1 × 10.<sup>-1</sup>~1×10<sup>-2</sup>After maintaining Pa, open the nozzle of the evaporator that accepts vaporized organic matter. At this time, inside the first monomer vapor deposition chamber 332, the film formation and curing steps are performed while transferring the first substrate 410 or the source portion.
In particular, if the first substrate 410 is charged inside the first monomer vapor deposition chamber 332 as described above, the monomer (monomer) and the photoinitiator that are polymerized when UV or heat is applied are flushed. Deposit through an evaporator.
When the above process is completed, the vapor-deposited surface of the monomer is cured by applying UV or heat to polymerize the monomer to form a first organic layer 432 in the polymer form.
On the other hand, if the target thickness is reached while the above steps are in progress, the first substrate 410 or the source portion is moved to the waiting area, the nozzle portion is closed, the injection of the process gas is stopped, and then the vacuum is applied. The conductance of the exhaust system is controlled to maintain the same degree of vacuum inside the first monomer vapor deposition chamber 332 as that of the third transfer chamber 331. At this time, the first substrate 410 and the mask are detached and moved to a position where the first substrate 410 can be discharged.
When the degree of vacuum becomes the same as described above, the first substrate 410 moves from the first monomer vapor deposition chamber 332 to the third transfer chamber 331. Further, when the degree of vacuum of the third transfer chamber 331 and the fourth transfer chamber P4 becomes the same, the first substrate 410 is moved from the third transfer chamber 331 to the fourth transfer chamber P4.
On the other hand, if the degree of vacuum between the 4th transfer chamber P4 and the 2nd turn module chamber T2 becomes the same, the 1st substrate 410 is moved to the 2nd turn module chamber T2, and the 1st substrate 410 in the 2nd turn module chamber T2. Is rotated 180 ° to prevent the change in the loading position of the first substrate 410.
When the above process is completed and the degree of vacuum of the second turn module chamber T2 and the fifth transfer chamber P5 becomes the same, the first substrate 410 is moved to the fifth transfer chamber P5. Further, after maintaining the same degree of vacuum between the fifth transfer chamber P5 and the third cluster 340, the gate valve is opened to move the first substrate 410 to the third cluster 340. In particular, the first substrate 410 moves from the fourth transfer chamber P4 to the fourth transfer chamber 341. At this time, the robot is used to move the first substrate 410.
As described above, the spatiotemporal division method is used in one of a plurality of first chemical vapor deposition (PECVD) steps for forming the fourth transfer chamber 341 and the second inorganic layer 433. When the conductance of the vacuum exhaust system is controlled and the degree of vacuum becomes the same, the gate valve is opened and the substrate is moved to the first chemical vapor deposition chamber 342. After the 1st board 410 was inserted between the mask already mounted and the board holder, precision alignment was performed by utilizing the mark of the 1st board 410 and the open mark of the mask by the aligning device to which the vision was connected. After that, the first substrate 410 and the mask are joined together.
Next, after completely closing the conductance control valve connected to the high vibration air pump, Ar, which is a discharge gas, is injected at the plasma generator to maintain 1 to 200 Pa, and then the power supply power is 3 to 5 W / cm.<sup>2</sup>To generate plasma.
At this time, the supply of the reactant, the reaction gas, and the transfer gas is supplied through the plasma generation source to adjust the pressure of 1 to 200 Pa. The reactants are injected into the plasma region to form radicals (SiN-producing gas: SiH).<sub>4</sub>/ NH<sub>3</sub>/ N<sub>2</sub>/ H<sub>2</sub>/ Ar used). The film formation process is performed in the above environment. At this time, the film formation rate is maintained within 200 nm / min, and SiH<sub>4</sub>(50 ~ 500sccm) / NH<sub>3</sub>(300 ~ 2000sccm) / N<sub>2</sub>Continuously supply (300 ~ 2000sccm) gas.
On the other hand, if the target thickness of the second inorganic layer 433 is reached by performing the above steps, the plasma power is increased to 1 W / cm after the supply of the gas that contributed to the reaction is interrupted.<sup>2</sup>It is lowered in multiple stages. Next, the first substrate 410 and the mask are detached and moved to a position where the substrate can be discharged. At the same time, after opening the conductance control valve provided in the high vibration air pump by time division space control, the degree of vacuum of the first chemical vapor phase chamber 342 is maintained at the same level as that of the fourth transfer chamber 341. At this time, the first substrate 410 moves from the first chemical vapor phase chamber 342 to the fourth transfer chamber 341.
On the other hand, when the above process is completed and the degree of vacuum of the 4th transfer chamber 341 and the 6th transfer chamber P6 is the same, the first substrate 410 is moved from the 4th transfer chamber 341 to the 6th transfer chamber P6. ..
If the degree of vacuum of the 6th transfer chamber P6 and the 3rd turn module chamber T3 are the same, the 1st substrate 410 is moved to the 3rd turn module chamber T3, and the 1st substrate 410 is moved to the 3rd turn module chamber T3. Rotate 180 ° to prevent the loading position of the first substrate 410 from being changed.
At this time, if the degree of vacuum of the third turn module chamber T3 and the seventh transfer chamber P7 is the same, the first substrate 410 is moved to the seventh transfer chamber P7. Further, after maintaining the same degree of vacuum between the 7th transfer chamber P7 and the 6th transfer chamber 361, the gate valve is opened to move the 1st substrate 410 to the 6th transfer chamber 361. At this time, the robot is used to move the first substrate 410.
On the other hand, if the degree of vacuum of the sixth transfer chamber 361 and one of the plurality of second monomer vapor deposition chambers 362, which is the organic matter vapor deposition process for forming the second organic layer 434, are the same, the gate valve is opened and the display substrate is displayed. Move 200 to the second monomer deposition chamber 362. At this time, since the method of forming the second organic layer 434 is similar to the method of forming the first organic layer 432, detailed description thereof will be omitted.
When the target thickness of the second organic layer 434 is reached, the first substrate 410 or the source part is moved to the waiting area, the nozzle part is closed, the injection of the process gas is stopped, and then the conductance of the vacuum exhaust system is reached. To keep the degree of vacuum of the second monomer vapor deposition chamber 362 the same as that of the sixth transfer chamber 361. At this time, the first substrate 410 and the mask are detached and moved to a position where the first substrate 410 can be discharged.
On the other hand, if the first substrate 410 as described above moves from the second monomer vapor deposition chamber 362 to the sixth transfer chamber 361 and then the degree of vacuum between the sixth transfer chamber 361 and the eighth transfer chamber P8 becomes the same, The substrate is moved from the 6th transfer chamber 361 to the 8th transfer chamber P8.
Further, if the degree of vacuum of the 8th transfer chamber P8 and the 4th turn module chamber T4 becomes the same, the 1st substrate 410 moves to the 4th turn module chamber T4, and the 1st substrate 410 in the 4th turn module chamber T4. Is rotated 180 ° to prevent the change in the loading position of the first substrate 410.
Further, when the above process is completed and the degree of vacuum of the fourth turn module chamber T4 and the ninth transfer chamber P9 becomes the same, the first substrate 410 is moved to the ninth transfer chamber P9. At this time, after maintaining the same degree of vacuum between the 9th transfer chamber P9 and the 7th transfer chamber 371, the gate valve is opened to move the 1st substrate 410 to the 7th transfer chamber 371. At this time, the robot is used to move the first substrate 410.
On the other hand, when the above process is completed, the seventh transfer chamber 371 and one of the plurality of second chemical vapor deposition chambers 372 that perform the plasma chemical vapor deposition (PECVD) step of forming the third inorganic layer 435 If the degree of vacuum is the same by controlling the conductance of the vacuum exhaust system using the spatiotemporal division method, the gate valve is opened and the first substrate 410 is moved to the second chemical vapor deposition chamber 372. At this time, since the method of forming the third inorganic layer 435 after aligning the first substrate 410 and the mask is similar to the method of forming the second inorganic layer 233 described above, detailed description thereof will be omitted.
On the other hand, when the third inorganic layer 435 reaches the target thickness and the process is completed, the display board 400 and the mask are detached and moved to a position where the display board 400 can be discharged. At the same time, after opening the conductance control valve provided in the high vibration air pump by time division space control, the degree of vacuum of the second chemical vapor phase chamber 372 is maintained at the same level as that of the seventh transfer chamber 371.
When the above process is completed, the display substrate 400 is moved from the second chemical vapor phase chamber 372 to the seventh transfer chamber 371. Further, when the degree of vacuum of the 7th transfer chamber 371 and the 10th transfer chamber P10 is the same, the display board 400 is moved from the 7th transfer chamber 371 to the 10th transfer chamber P10.
On the other hand, when the above process is completed, the display board 400 is transferred from the 10th transfer chamber P10 to the 5th turn module chamber T5, and in the 5th turn module chamber T5, the display board 400 is rotated by 180 ° and aligned. , Move to the 11th transfer chamber P11.
At this time, the user completes the work by moving the display board 400 discharged from the 11th transfer chamber P11 to the outside. In particular, the display board 400 inside the 11th transfer chamber P11 is taken out through the robot.
Therefore, the thin film encapsulation manufacturing apparatus 300 can control the thickness of each layer when forming a multi-layer thin film in which an organic layer and an inorganic layer are laminated, and various thin film processes can be performed by a spatiotemporal divided vacuum control method for plasma chemical vapor deposition. By maintaining the same degree of vacuum in the equipment, an in-line cluster is formed. In addition, the thin film encapsulation manufacturing apparatus 300 can perform the sputtering, flash vapor deposition, and PECVD steps in-line by forming an in-line cluster.
FIG. 5 is a conceptual diagram showing a thin film encapsulation manufacturing apparatus 500 according to still another embodiment of the present invention. FIG. 6 is a cross-sectional view showing a display substrate 200 manufactured by the thin film encapsulation manufacturing apparatus 500 shown in FIG.
With reference to FIGS. 5 and 6, the loading cluster (not shown), the first transfer chamber P1, the first cluster 520, the second transfer chamber P2, the first turn module chamber T1, the third transfer chamber P3, the first. 2 cluster 530, 4th transfer chamber P4, 2nd turn module chamber T2, 5th transfer chamber P5, 3rd cluster 540, 6th transfer chamber P6, 3rd turn module chamber T3, 7th transfer chamber P7, 4th cluster 560, 8th Transfer Chamber P8, 4th Turn Module Chamber T4, 9th Transfer Chamber P9, 5th Cluster 570, 10th Transfer Chamber P10, 5th Turn Module Chamber T5, 11th Transfer Chamber P11, 6th Cluster 580, 12th Transfer Chamber P12, 6th Turn Module Chamber T6, 13th Transfer Chamber P13, 7th Cluster 590, 14th Transfer Chamber P14, 7th Turn Module Chamber T7, 15th Transfer Chamber P15 and Unloading Cluster (not shown) ) Is provided.
At this time, the first transfer chamber P1 to the fifteenth transfer chamber P15 are formed in the same manner or similar to the first transfer chamber P1 to the fourth transfer chamber P4 described with reference to FIGS. Since the display board 600 can be transferred in the above, detailed description thereof will be omitted below.
Further, the 1st turn module chamber T1 to the 7th turn module chamber T7 are formed to be the same as or similar to the 1st turn module chamber T1 and the 2nd turn module chamber T2 described with reference to FIGS. 1 and 2, and are the same or the same. Since the display board 600 can be transferred by aligning or inverting it in a similar manner, detailed description thereof will be omitted below.
On the other hand, in the case of the loading cluster and the unloading cluster, since they are formed as described in FIGS. 1 and 2, detailed description thereof will be omitted below. Further, since the loading cluster and the unloading cluster are provided or not provided in the thin film encapsulation manufacturing apparatus 500, the case where the loading cluster and the unloading cluster are not provided is described below for convenience of explanation. It will be explained in detail as the center.
The first cluster 520 includes a second transfer chamber 521, a first sputtering chamber 522, and a first mask storage chamber 523. At this time, since the first cluster 520 is formed as or similar to that described with reference to FIGS. 1 and 2, detailed description thereof will be omitted.
The second cluster 530 also includes a third transfer chamber 531 and a first monomer deposition chamber 532 and a second mask storage chamber 533. At this time, since the second cluster 530 is formed as or similar to that described with reference to FIGS. 1 and 2, detailed description thereof will be omitted.
The third cluster 540 includes a fourth transfer chamber 541, a first chemical vapor phase chamber 542, and a third mask storage chamber 543. At this time, since the third cluster 540 is formed as or similar to that described with reference to FIGS. 1 and 2, detailed description thereof will be omitted. However, for convenience of explanation, the case where the second inorganic layer 633 is formed by the plasma chemical vapor deposition step in the first chemical vapor phase chamber 542 will be described in detail below.
On the other hand, the fourth cluster 560 includes a sixth transfer chamber 561, a second monomer deposition chamber 562, and a fourth mask storage chamber 563. At this time, the fourth cluster 560 forms the second organic layer 634 on the second inorganic layer 633. In particular, since the fourth cluster 560 is formed in the same manner as the second cluster 530 and the second organic layer 634 is formed in the same manner as the first organic layer 632, detailed description thereof will be omitted.
The fifth cluster 570 includes a seventh transfer chamber 571, a second chemical vapor phase chamber 572, and a fifth mask storage chamber 573. At this time, the fifth cluster 570 forms the third inorganic layer 635 on the second organic layer 634. In particular, since the fifth cluster 570 is formed in the same manner as the third cluster 540 and the third inorganic layer 635 is formed in the same manner as the second inorganic layer 233, detailed description thereof will be omitted.
On the other hand, the sixth cluster 580 includes an eighth transfer chamber 581, a third monomer vapor deposition chamber 582, and a sixth mask storage chamber 583. At this time, the sixth cluster 580 forms the third organic layer 636 on the third inorganic layer 635. In particular, since the sixth cluster 580 is formed in the same manner as the second cluster 530 and the third organic layer 636 is formed in the same manner as the first organic layer 632, detailed description thereof will be omitted.
The seventh cluster 590 also includes a ninth transfer chamber 591, a third chemical vapor phase chamber 592, and a seventh mask storage chamber 593. At this time, the 7th cluster 590 forms the 4th inorganic layer 637 on the 3rd organic layer 636. In particular, since the 7th cluster 590 is formed in the same manner as the 3rd cluster 540 and the 4th inorganic layer 637 is formed in the same manner as the 2nd inorganic layer 633, detailed description thereof will be omitted.
On the other hand, in the following, the method of performing the thin film sealing step by the thin film sealing manufacturing apparatus 500 and the structure of the display substrate 600 will be described in detail.
First, the display board 600 can be manufactured. Specifically, the display board 600 includes a first board 610, a sealing unit 630, and a light emitting unit 620. At this time, since the first substrate 610 and the light emitting unit 620 are the same as the first substrate 210 and the light emitting unit 220 described with reference to FIGS. 1 and 2, detailed description thereof will be omitted.
On the other hand, after preparing the first substrate 610 on which the light emitting portion 620 is formed as described above, the first substrate 610 is brought into the thin film sealing manufacturing apparatus 500 to form the sealing portion 630. At this time, the sealing portion 630 includes at least one sandwich structure in which at least one organic layer is inserted between at least two inorganic layers. Further, the sealing portion 630 includes at least one sandwich structure in which at least one inorganic layer is inserted between at least two organic layers.
In particular, the sealing portion 630 includes the first inorganic layer 631, the first organic layer 632, the second inorganic layer 633, the second organic layer 634, the third inorganic layer 635, the third organic layer 636, and the fourth inorganic layer, as described above. Layers 637 are sequentially laminated and formed.
Specifically, the first organic layer 632 to the third organic layer 636 are formed of a polymer, and preferably a single formed of any one of polyethylene terephthalate, polyimide, polycarbonate, epoxy, polyethylene and polyacrylate. It can be a membrane or a laminated membrane. More preferably, the first organic layer 632 to the third organic layer 636 are formed of polyacrylate, and specifically, a monomer composition containing a diacrylate-based monomer and a triacrylate-based monomer is polymerized. .. The monomer composition further contains a monoacrylate-based monomer. Further, the monomer composition further contains, but is not limited to, a known photoinitiator such as TPO.
The first inorganic layer 631 to the fourth inorganic layer 637 can be a single film or a laminated film containing a metal oxide or a metal nitride. Specifically, the first inorganic layer 631 to the fourth inorganic layer 637 are SiNx, Al.<sub>2</sub>O<sub>3</sub>, SiO<sub>2</sub>, TiO<sub>2</sub>Including any one of them. At this time, the fourth inorganic layer 637 is formed so as to prevent moisture permeation to the light emitting portion 620.
On the other hand, a metal halide layer containing LiF is further contained between the light emitting unit 620 and the first inorganic layer 631. The metal halide layer prevents damage to the light emitting portion 620 when the first inorganic layer 631 is formed in the sputtering step.
Further, the first organic layer 632 is characterized in that the area is smaller than that of the second inorganic layer 633, and the area of the second organic layer 634 is also smaller than that of the third inorganic layer 635. The area of the third organic layer 636 is also smaller than that of the fourth inorganic layer 637.
At this time, the first organic layer 632 is completely covered by the second inorganic layer 633, and the second organic layer 634 is also completely covered by the third inorganic layer 635. The third organic layer 636 is also completely covered by the fourth inorganic layer 637.
By investigating the method for forming the sealing portion 630 as described above, the overall vacuum degree of the thin film sealing manufacturing apparatus 500 is 5 × 10.<sup>-4</sup>After maintaining below Pa, the masks in each of the first mask storage chambers 523 to the fifth mask storage chamber 573 are placed in the first sputtering chamber 522, the first monomer vapor deposition chamber 532, the first chemical vapor deposition chamber 542, and the second. After moving inside the monomer vapor deposition chamber 562 and the second chemical vapor deposition chamber 572 using a robot arm, the chambers are mounted inside each chamber.
When the above process is completed, the first inorganic layer 631, the first organic layer 632, the second inorganic layer 633, the second organic layer 634, and the third inorganic layer 635 are formed on the light emitting unit 620. At this time, the method of forming the first inorganic layer 631, the first organic layer 632, the second inorganic layer 633, the second organic layer 634, and the third inorganic layer 635 is as described with reference to FIGS. 3 and 4 above. Therefore, detailed explanation is omitted.
On the other hand, when the above process is completed, the first substrate 610 is charged into the fifth cluster 570 to the sixth cluster 580 via the tenth transfer chamber P10, the fifth turn module chamber T5, and the eleventh transfer chamber P11.
At this time, in the sixth cluster 580, the third organic layer 636 is formed on the third inorganic layer 635. At this time, since the operation method of the sixth cluster 580 is similar to the operation of the second cluster 530 and the fourth cluster 560 described above, detailed description thereof will be omitted.
When the above process is completed, the first substrate 610 is moved from the 6th cluster 580 to the 7th cluster 590 through the 12th transfer chamber P12, the 6th turn module chamber T6 and the 13th transfer chamber P13.
At this time, in the 7th cluster 590, the 4th inorganic layer 637 is formed on the 3rd organic layer 636. In particular, the 7th cluster 590 forms the 4th inorganic layer 637 through the plasma chemical vapor deposition process. In the above case, the 7th cluster 590 operates similarly to the 3rd cluster 540 and the 5th cluster 570, and therefore detailed description thereof will be omitted.
After forming the fourth inorganic layer 637 as described above, the display board 600 is pulled out from the seventh cluster 590 through the 14th transfer chamber P14, the 7th turn module chamber T7, and the 15th transfer chamber P15.
On the other hand, the sealing portion 630 formed as described above is not limited to the above, and the first organic layer 632 and the second inorganic layer 633 may be alternately formed on the first inorganic layer 631.
Therefore, the thin film encapsulation manufacturing apparatus 500 can control the thickness of each layer when forming a multi-layer thin film in which an organic layer and an inorganic layer are laminated, and various thin film processes can be performed by a spatiotemporal divided vacuum control method for plasma chemical vapor deposition. By maintaining the same degree of vacuum in the equipment, an in-line cluster can be formed. Further, the thin film encapsulation manufacturing apparatus 500 can perform the sputtering, flash vapor deposition, and PECVD steps in-line by forming an in-line type cluster.
Even if the present invention is described with respect to the preferred embodiments described above, various modifications and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of claims includes modifications and modifications thereof as long as it belongs to the gist of the present invention.
The present invention is suitably used in a technical field related to a thin film encapsulation manufacturing apparatus and a thin film encapsulation manufacturing method.
100, 300, 500 Thin film encapsulation manufacturing equipment 120, 320, 520 1st cluster 130, 330, 530 2nd cluster 140, 340, 540 3rd cluster 200, 400, 600 Display board 210, 410, 610 1st board 220, 420, 620 Light emitting part 230, 430, 630 Sealed part
7 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7
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| EP2747163A1 | European Patent Office (EPO) | A1 | |
| US2014179041A1 | United States of America | A1 | |
| TW201427138A | Taiwan Province of China | A | |
| CN103904006A | China | A | |
| KR20140082479A | Republic of Korea | A | |
| JP2014123727AThis record | Japan | A | |
| US9853192B2 | United States of America | B2 | |
| JP6309260B2 | Japan | B2 | |
| TWI640114B | Taiwan Province of China | B | |
| KR101990555B1 | Republic of Korea | B1 | |
| CN112331591A | China | A | |
| EP4033559A1 | European Patent Office (EPO) | A1 | |
| CN112331591B | China | B |
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Numbers
- Publication
- 2014123727
- Application
- 256884
Titles2
- Japanese
- 薄膜封止の製造装置及び薄膜封止の製造方法
- English
- Thin film encapsulation manufacturing equipment and thin film encapsulation manufacturing method
Classification
- CPC, 7
- H10K71/00
- H10P72/0468
- B05D1/60
- B05D1/62
- H10K59/8731
- H10K50/8445
- H10H20/852
- IPC, 12
- H01L21 31
- H05B33 04
- H01L51 50
- H05B33 10
- C23C16 54
- C23C14 56
- H01L21 312
- H10P14 24
- H10P14 60
- H10P14 22
- H10P14 68
- H10P72 00