Light-emitting device and self-luminous display device, as well as luminaire and backlight incorporating light-emitting device

The present invention relates to a light emitting device and a self-luminous display device including a plurality of light emitting diodes, as well as a lighting device and a backlight provided with the above light emitting device.

Conventionally, there is a light emitting device in which a plurality of light emitting diode elements are mounted in one package to obtain desired brightness (Japanese Patent Laid-Open No. 2007-149896 (Patent Document 1)).

FIG. 34 is a schematic configuration diagram of a conventional light emitting device disclosed in Patent Document 1. As shown in FIG. 34, the light emitting device 1 is parallel to each other in the forward direction between the package body 2 and the pair of electrodes 3a and 3b provided on the outer surfaces of the package body 2 facing each other and the pair of electrodes 3a and 3b. The two LED (light emitting diode) chips 4a and 4b mounted on the package body 2 and the current adjusting units 5a and 5b interposed between the electrodes 3a and the LED chips 4a and 4b are connected to each other. I have.

In this way, by providing a plurality of LED chips in one package, desired brightness can be obtained.

However, in the conventional light emitting device 1 disclosed in Patent Document 1, if any one of the two LED chips 4a and 4b, which are the light emitting elements, causes a short circuit failure, a short circuit failure occurs. There is a problem that all LED chips cannot be lit as a result because an overcurrent flows through the LED chips and the voltage applied to the remaining LED chips decreases due to a voltage drop in the power supply or wiring.

Since the probability that any of the plurality of LED chips will cause a short-circuit failure increases as the number of LED chips increases, the yield of the light emitting device 1 decreases or the failure rate increases as the number of mounted LED chips increases. Will rise.

<p><patcit num="1"><text>JP-A-2007-149896</text></patcit></p>

<p> Therefore, the first object of the present invention is to improve the yield and reduce the failure rate in a light emitting device provided with a plurality of light emitting elements.</p><p> The second problem is to improve the yield and reduce the failure rate of the self-luminous display provided with a plurality of light emitting elements.</p><p> A third object is to provide a lighting device and a backlight provided with the above-mentioned light emitting device.</p>

<p> In order to solve the above problems, the light emitting device of the present invention A light emitting diode element with a fuse in which a light emitting diode element and a fuse that cuts off the current when a current exceeding a preset set current flows are connected in series. A parallel configuration unit in which a plurality of the above-mentioned light emitting diode elements with fuses are connected in parallel, and A light emitting diode element circuit having at least one of the above parallel building blocks, A first power line and a second power line that are connected to the light emitting diode element circuit and supply a current from the current source to the light emitting diode element circuit. It is characterized by being equipped with.</p><p> According to the above configuration, current is supplied from the current source to the light emitting diode element circuit via the first power supply line and the second power supply line, and the light emitting diode element circuit is connected in parallel to form a parallel configuration unit with a plurality of fuses. The light emitting diode element of the light emitting diode element emits light. At that time, even if any of the light emitting diode elements causes a short circuit failure, the fuse connected to the light emitting diode element that has caused the short circuit failure can be disconnected to cut off the overcurrent. Therefore, the light emitting diode element other than the light emitting diode element that has caused the short circuit failure can continuously emit light, and the present light emitting device can continue to operate. That is, the yield of the light emitting device can be improved and the failure rate can be reduced.</p><p> Further, in the light emitting device of the first embodiment, A control circuit is interposed between the light emitting diode element with each fuse in the light emitting diode element circuit and the second power supply line.</p><p> According to this embodiment, since the control circuit is interposed between the light emitting diode element with each fuse in the light emitting diode element circuit and the second power supply line, each light emitting diode element is connected by the control circuit. It becomes possible to drive independently.</p><p> Further, in the light emitting device of the first embodiment, The plurality of fused light emitting diode elements are arranged on a single substrate.</p><p> According to this embodiment, the plurality of fused light emitting diode elements are arranged on a single substrate. Therefore, after the plurality of light emitting diode elements constituting the plurality of fused light emitting diode elements are collectively arranged on the single substrate, they are connected in series with each of the arranged plurality of light emitting diode elements. It becomes possible to collectively form the connected fuses. As a result, it is not necessary to connect each of the plurality of individually formed fuses in series to each light emitting diode element, and the manufacturing cost of this light emitting device can be reduced.</p><p> Further, in the light emitting device of the first embodiment, The maximum size of the light emitting diode element is 100 μm or less. The number of the light emitting diode elements is 100 or more.</p><p> According to this embodiment, the maximum size of the light emitting diode element is 100 μm or less. Therefore, when the plurality of light emitting diode elements are arranged and wired on the substrate, an integrated circuit or a TFT (Thin Film Transistor: thin film transistor) is used. ) The process of formation can be used. Therefore, a part of the wiring can be used as the fuse, and the manufacturing cost of the light emitting device can be reduced.</p><p> Further, since the number of the light emitting diode elements is 100 or more, the change in the brightness of the light emitting device when one of the light emitting diode elements becomes incapable of emitting light can be reduced to about 1% or less. Therefore, the brightness of the light emitting device can be stabilized.</p><p> Further, in the light emitting device of the first embodiment, The light emitting diode element circuit is configured by connecting a plurality of the parallel structural units in series.</p><p> According to this embodiment, for example, when the n parallel building blocks are connected in series to form the light emitting diode element circuit, the light emitting diode element circuit is formed by one of the parallel building blocks. The drive voltage can be increased n times as compared with the case, and the current flowing through the first power supply line and the second power supply line can be reduced to 1 / n. Therefore, the amount of heat generated by the first and second power lines can be reduced. Alternatively, the first and second power lines can be made thinner.</p><p> Further, in the light emitting device of the first embodiment, The plurality of light emitting diode elements included in each of the parallel building blocks are The first light emitting diode element arranged so as to be in the forward direction when the first power supply line has a higher potential than the second power supply line, With the second light emitting diode element arranged so as to be in the forward direction when the second power supply line has a higher potential than the first power supply line. However, they are mixed The first power supply line and the second power supply line supply an AC current from the current source to the light emitting diode element circuit.</p><p> According to this embodiment, the plurality of light emitting diode elements included in each of the parallel building blocks are arranged in order when the potential of the first power supply line is higher than the potential of the second power supply line. The first light emitting diode element arranged so as to be in the direction and the second light emitting diode element are arranged so as to be in the forward direction when the potential of the second power supply line is higher than the potential of the first power supply line. It is mixed with the second light emitting diode element. Therefore, the light emitting diode element circuit can be AC-driven. As a result, when it is driven by an AC power source such as a commercial power source, the addition of a rectifier circuit can be omitted.</p><p> Further, in the light emitting device of the first embodiment, Wiring for connecting the plurality of light emitting diode elements is formed on the single substrate. The plurality of fuses constituting the plurality of light emitting diode elements with fuses are formed by a part of the wiring.</p><p> According to this embodiment, since the wiring for connecting the plurality of light emitting diode elements is formed on the single substrate and the fuse is formed by a part of the wiring, the fuse is formed on the single substrate. The wiring formed in can serve both the role of connecting the plurality of light emitting diode elements and the role of the fuse connected in series with the light emitting diode elements. As a result, it is not necessary to add a separate step for forming the fuse, and the manufacturing cost of the light emitting device can be further reduced.</p><p> Further, the light emitting device of the present invention A light emitting diode element with a fuse in which a light emitting diode element and a fuse that cuts off the current when a current exceeding a preset set current flows are connected in series. A light emitting diode element circuit in which one ends of the plurality of light emitting diode elements with fuses are connected to each other, A power line connected to one end of the plurality of light emitting diode elements with fuses in the light emitting diode element circuit and supplying a current from a current source to the light emitting diode element circuit. It is characterized by being equipped with.</p><p> According to the above configuration, a current is supplied from the current source to the light emitting diode element circuit via the power supply line, and the light emitting diode elements of the plurality of light emitting diode elements with fuses whose ends are connected to each other emit light. At that time, even if any of the light emitting diode elements causes a short circuit failure, the fuse connected to the light emitting diode element that has caused the short circuit failure can be disconnected to cut off the overcurrent. Therefore, the light emitting diode element other than the light emitting diode element that has caused the short circuit failure can continuously emit light, and the present light emitting device can continue to operate. That is, the yield of the light emitting device can be improved and the failure rate can be reduced.</p><p> Further, the lighting device of the present invention Equipped with a light emitting module with a light emitting device mounted on a heat radiating plate The light emitting device is the light emitting device according to any one of claims 1 to 8. It is characterized by that.</p><p> According to the above configuration, since the light emitting module on which the light emitting device according to any one of claims 1 to 8 is mounted is provided on the heat radiating plate, the failure rate can be reduced.</p><p> Further, the backlight of the present invention is A support board with a heat dissipation function and With a plurality of light emitting devices mounted on the support substrate With The light emitting device is the light emitting device according to any one of claims 1 to 8. It is characterized by that.</p><p> According to the above configuration, since the light emitting device according to any one of claims 1 to 8 is mounted on the support substrate having the heat dissipation function, the failure rate can be reduced.</p><p> Further, the self-luminous display of the present invention Multiple first wires arranged in one direction, A plurality of second wires arranged in the other direction substantially orthogonal to the above one direction, and With a plurality of pixels arranged in a matrix at the intersection position of the first wiring and the second wiring. With Each of the plurality of pixels includes a light emitting diode element with a fuse in which a light emitting diode element and a fuse that cuts off the current when a current exceeding a preset set current flows are connected in series. One of the first wiring and the second wiring is connected to one end of the fused light emitting diode element belonging to each of the pixels arranged along the wiring. Of the first wiring and the second wiring, the wiring connected to one end of the fused light emitting diode element is connected to the power supply line to which the current is supplied from the current source. It is characterized by that.</p><p> According to the above configuration, in the passive matrix type self-luminous display, the intersection of the plurality of first wires arranged in one direction and the plurality of second wires arranged in the other direction substantially orthogonal to the one direction. Each pixel arranged in a matrix at the position includes a plurality of light emitting diode elements with a fuse in which a light emitting diode element and a fuse are connected in series.</p><p> Therefore, even if the light emitting diode element constituting a certain pixel causes a short circuit failure, the fuse connected to the light emitting diode element causing the short circuit failure can be disconnected to cut off the overcurrent. As a result, the light emitting diode element belonging to the pixel to which the light emitting diode element causing the short circuit failure belongs and the first wiring or another pixel sharing the second wiring can continuously emit light, and one of the above. It is possible to prevent a line defect from occurring due to a short circuit defect of the light emitting diode element. Therefore, the yield of the self-luminous display can be improved and the failure rate can be reduced.</p><p> In addition, in the self-luminous display of the first embodiment, The power supply line is commonly connected to all of the first wiring and the second wiring, whichever is connected to one end of the fused light emitting diode element.</p><p> According to the above configuration, in the active matrix type self-luminous display, the intersection of the plurality of first wirings arranged in one direction and the plurality of second wirings arranged in the other direction substantially orthogonal to the one direction. Each pixel arranged in a matrix at the position includes a plurality of light emitting diode elements with a fuse in which a light emitting diode element and a fuse are connected in series.</p><p> Therefore, even if the light emitting diode element constituting a certain pixel causes a short circuit failure, the fuse connected to the light emitting diode element causing the short circuit failure can be disconnected to cut off the overcurrent. As a result, the light emitting diode element belonging to another pixel different from the pixel to which the light emitting diode element causing the short circuit failure can continue to emit light, and the other light emitting diode due to the short circuit failure of one light emitting diode element. It is possible to prevent the occurrence of a fatal defect such that the element also becomes defective. Therefore, the yield of the self-luminous display can be improved and the failure rate can be reduced.</p><p> In addition, in the self-luminous display of the first embodiment, Each of the plurality of pixels includes a plurality of the plurality of fused light emitting diode elements connected in parallel.</p><p> According to this embodiment, each of the plurality of pixels includes a plurality of the plurality of fused light emitting diode elements connected in parallel. Therefore, even if the light emitting diode element belonging to a certain pixel causes a short circuit failure, the fuse may be disconnected to cut off the overcurrent, and the other light emitting diode element belonging to the same pixel may continue to emit light. it can. Therefore, it is possible to prevent a pixel defect caused by a short circuit defect of one of the light emitting diode elements.</p><p> In addition, in the self-luminous display of the first embodiment, The maximum size of the light emitting diode element is 100 μm or less.</p><p> According to this embodiment, the maximum size of the light emitting diode element is 100 μm or less. Therefore, when the plurality of light emitting diode elements are arranged and wired on the substrate, an integrated circuit or a TFT forming process is used. Can be done. Therefore, it becomes possible to use the fuse as a part of the wiring, and it is possible to reduce the manufacturing cost of the self-luminous display which requires a very large number of the light emitting diode elements.</p><p> In addition, in the self-luminous display of the first embodiment, The plurality of light emitting diode elements included in each of the plurality of pixels are arranged on the substrate. Wiring for connecting the plurality of light emitting diode elements is formed on the substrate. The plurality of fuses constituting the plurality of light emitting diode elements with fuses are formed by a part of the wiring.</p><p> According to this embodiment, since the wiring for connecting the plurality of light emitting diode elements is formed on the substrate and the fuse is formed by a part of the wiring, the wiring formed on the substrate. Can serve both the role of connecting the plurality of light emitting diode elements and the role of the fuse connected in series with the light emitting diode elements. As a result, it is not necessary to add a separate step for forming the fuse, and the manufacturing cost of the light emitting device can be further reduced.</p>

<p> As is clear from the above, in the light emitting device of the present invention, a current is supplied from the current source to the light emitting diode element circuit via the first power supply line and the second power supply line, and the light emitting device is connected in parallel to form a parallel configuration unit. The light emitting diode element of the plurality of light emitting diode elements with fuses constituting the above is emitted. At that time, even if any of the light emitting diode elements causes a short circuit failure, the fuse connected to the light emitting diode element that has caused the short circuit failure can be disconnected to cut off the overcurrent. As a result, the light emitting diode element other than the light emitting diode element that has caused the short circuit failure can continuously emit light, and the present light emitting device can continue to operate. Therefore, the yield of the light emitting device can be improved and the failure rate can be reduced.</p><p> Further, in the light emitting device of the present invention, a current is supplied from a current source to a light emitting diode element circuit via a power supply line, and light emitting diode elements of a plurality of light emitting diode elements with fuses whose ends are connected to each other are emitted. .. At that time, even if any of the light emitting diode elements causes a short circuit failure, the fuse connected to the light emitting diode element that has caused the short circuit failure can be disconnected to cut off the overcurrent. As a result, the light emitting diode element other than the light emitting diode element causing the short circuit failure can continuously emit light, and the present light emitting device can continue to operate. Therefore, the yield of the light emitting device can be improved and the failure rate can be reduced.</p><p> Further, since the lighting device of the present invention includes a light emitting module on which the light emitting device according to any one of claims 1 to 8 is mounted on a heat radiating plate, the failure rate can be lowered. it can.</p><p> Further, in the backlight of the present invention, the light emitting device according to any one of claims 1 to 8 is mounted on a support substrate having a heat dissipation function, so that the failure rate can be reduced. it can.</p><p> Further, the self-luminous display of the present invention is formed in a matrix at an intersection position of a plurality of first wirings arranged in one direction and a plurality of second wirings arranged in the other direction substantially orthogonal to the one direction. Each of the arranged pixels includes a plurality of light emitting diode elements with a fuse in which a light emitting diode element and a fuse are connected in series. Therefore, even if the light emitting diode element constituting a certain pixel causes a short circuit failure, the fuse connected to the light emitting diode element causing the short circuit failure can be disconnected to cut off the overcurrent.</p><p> As a result, the light emitting diode element belonging to the pixel to which the light emitting diode element causing the short circuit failure belongs and the first wiring or another pixel sharing the second wiring can continuously emit light, and one of the above. It is possible to prevent a line defect from occurring due to a short circuit defect of the light emitting diode element. Therefore, the yield of the self-luminous display can be improved and the failure rate can be reduced.</p>

<figref num="1">It is a circuit diagram in the light emitting device of this invention.</figref><figref num="2">It is a schematic plan view of the light emitting device shown in FIG.</figref><figref num="3">FIG. 2 is a cross-sectional view taken along the line AA'in FIG.</figref><figref num="4">It is sectional drawing of the light emitting diode element in the light emitting device shown in FIG.</figref><figref num="5">It is a figure which shows the forming procedure of the light emitting diode element shown in FIG.</figref><figref num="6">It is a figure which shows the formation procedure of the light emitting diode element which follows FIG.</figref><figref num="7">It is a figure which shows the formation procedure of the light emitting diode element which follows FIG.</figref><figref num="8">It is a figure which shows the formation procedure of the light emitting diode element which follows FIG.</figref><figref num="9">It is a top view of the substrate on which the electrode for the light emitting diode element arrangement was formed.</figref><figref num="10">FIG. 9 is a cross-sectional view taken along the line BB'in FIG.</figref><figref num="11">It is explanatory drawing of the principle that a light emitting diode element is arranged on an electrode.</figref><figref num="12">It is a waveform diagram of the AC voltage applied between the 1st and 2nd electrodes.</figref><figref num="13">It is a top view of the substrate in which light emitting diode elements are arranged.</figref><figref num="14">It is a figure which shows the wiring formation procedure with respect to the light emitting diode element arranged on a substrate.</figref><figref num="15">It is a figure which shows the wiring formation procedure following FIG.</figref><figref num="16">It is a figure which shows the wiring formation procedure following FIG.</figref><figref num="17">It is a figure which shows the wiring formation procedure following FIG.</figref><figref num="18">It is a circuit diagram which shows the modification of the light emitting device shown in FIG.</figref><figref num="19">It is a circuit diagram in the light emitting device different from FIG. 1 and FIG.</figref><figref num="20">It is a circuit diagram in the light emitting device different from FIG. 1, FIG. 18 and FIG.</figref><figref num="21">It is a side view in the lighting apparatus of this invention.</figref><figref num="22">It is a side view of the light emitting module built in the lighting apparatus shown in FIG.</figref><figref num="23">It is a top view of the light emitting module shown in FIG.</figref><figref num="24">It is a top view in the backlight of this invention.</figref><figref num="25">It is a circuit diagram in the self-luminous display of this invention.</figref><figref num="26">It is a schematic plan view of 1 pixel in the self-luminous display shown in FIG.</figref><figref num="27">FIG. 6 is a cross-sectional view taken along the line CC'in FIG. 26.</figref><figref num="28">It is a circuit diagram which shows the modification of the self-luminous display shown in FIG.</figref><figref num="29">It is a circuit diagram of a self-luminous display different from FIGS. 25 and 28.</figref><figref num="30">It is a schematic plan view of 1 pixel in the self-luminous display shown in FIG.</figref><figref num="31">FIG. 30 is a cross-sectional view taken along the line D-D'in FIG.</figref><figref num="32">FIG. 30 is a cross-sectional view taken along the line E-E'in FIG. 30.</figref><figref num="33">FIG. 30 is a cross-sectional view taken along the line FF'in FIG.</figref><figref num="34">It is a schematic block diagram of the conventional light emitting device.</figref>

Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments.

First embodiment FIG. 1 is a circuit diagram of the light emitting device of the present embodiment. Further, FIG. 2 is a schematic plan view of the light emitting device, and FIG. 3 is a cross-sectional view taken along the line AA'in FIG. Further, FIG. 4 is a cross-sectional view of a light emitting element (light emitting diode element) in the present light emitting device. Further, FIGS. 5 to 17 are explanatory views of a forming procedure in this light emitting device.

In FIG. 1, the light emitting device 11 of the present embodiment has a light emitting diode element 14 with a fuse, which is configured by connecting a light emitting diode element 12 and a fuse 13 in series. Further, a plurality of light emitting diode elements 14 with fuses are connected in parallel to form a parallel configuration unit 15. Here, the fuse 13 cuts off the current when a current exceeding a preset set current flows through the light emitting diode element 12 connected in series with the fuse 13.

Further, the parallel configuration unit 15 is one or a plurality of the parallel configuration units 15 are connected in series to form the light emitting diode element circuit 16. That is, in the present embodiment, the light emitting diode element circuit 16 is composed of one parallel structural unit 15, but as in the embodiment described later, light is emitted by a plurality of parallel structural units 15 connected in series. The diode element circuit 16 may be configured.

A first power supply line 17 and a second power supply line 18 are connected to the light emitting diode element circuit 16. Then, a current is supplied from the power supply 19 to the light emitting diode element circuit 16 through the first power supply line 17 and the second power supply line 18.

As described above, in the light emitting device 11, each of the light emitting diode elements 12 is connected in series with a fuse 13 that cuts off the current when a current exceeding the set current flows. Therefore, even if the light emitting diode element 12 causes a short circuit failure, the connected fuse 13 can be disconnected to cut off the overcurrent. Therefore, the light emitting diode element 12 other than the light emitting diode element 12 that has caused the short circuit failure can continue to emit light. That is, the light emitting device 11 as a whole can continue to operate. Therefore, the yield of the light emitting device 11 can be improved and the failure rate can be reduced.

Each of the light emitting diode elements 14 with a fuse may be provided with a resistor (not shown) in order to adjust the current flowing through the light emitting diode element 12.

Hereinafter, preferred embodiments of the light emitting device 11 according to the present embodiment will be described in detail.

As shown in FIGS. 2 and 3, in the light emitting device 11 of the present embodiment, a plurality of light emitting diode elements 12 are arranged on the substrate 20.

As shown in FIG. 4, the light emitting diode element 12 has a structure in which a rod-shaped first conductive type semiconductor core 21 is covered with a light emitting layer 22 and a second conductive type semiconductor shell 23 in this order. doing. One end (region 21a) of the rod-shaped semiconductor core 21 is exposed from the semiconductor shell 23. Here, when the first conductive type is n type and the second conductive type is p type, the semiconductor core 21 of the first conductive type (n type) is used as a negative electrode, and the second conductive type is used. The light emitting diode element 12 can emit light by passing a current through the (p-type) semiconductor shell 23 as a positive electrode.

As shown in FIG. 3, two layers of wiring are formed on the substrate 20, and a part of the first layer wiring located in the lower layer constitutes the second power line 18 and is located in the upper layer. A part of the two-layer wiring constitutes the first power line 17. As shown in FIG. 1, the first power line 17 and the second power line 18 are connected to the power source 19. However, in FIGS. 2 and 3, the power supply 19 is not shown.

The first power supply line 17 is composed of another part of the second layer wiring, and is a second layer wiring narrow portion 26 protruding from the first power supply line 17, the second layer wiring and the first power line. A via 25 that connects to the 1st layer wiring, a 1st layer wiring narrow portion 24 that is composed of other parts of the 1st layer wiring and is separated from the 2nd power line 18, and a contact hole 27. It is connected to the semiconductor shell 23 of the light emitting diode element 12 via. On the other hand, the second power supply line 18 is connected to the semiconductor core 21 of the light emitting diode element 12 via the contact hole 28.

The first layer wiring narrow portion 24, via 25, and the second layer wiring narrow portion 26 form a fuse 13 and are connected in series with the light emitting diode element 12. In this way, as described above, the light emitting diode element 12 and the fuse 13 constitute the light emitting diode element 14 with a fuse.

Further, in the first power supply line 17 and the second power supply line 18, as shown in FIG. 2, a plurality of light emitting diode elements 14 with fuses are connected in parallel, and the parallel configuration unit 15 and the light emitting diode element circuit 16 are connected. Plays the role of forming.

As shown in FIG. 3, a first electrode 29 and a second electrode 30 are formed on the substrate 20 where the light emitting diode element 12 is arranged, and the first electrode 29 is formed. And the second electrode 30 is covered with an insulating film 31. The first electrode 29 and the second electrode 30 are used when the light emitting diode element 12 is arranged on the substrate 20, and after the light emitting diode element 12 is arranged, the electrodes and wirings are used. It is not used as. The method of arranging the light emitting diode element 12 on the substrate 20 will be described in detail later.

A transparent first interlayer insulating film 32 is formed between the first layer wiring and the substrate 20 and between the first layer wiring and the light emitting diode element 12. Further, a transparent second interlayer insulating film 33 is formed between the first layer wiring and the second layer wiring. Further, a transparent protective film 34 is formed on the second layer wiring.

Here, for example, n-GaN can be used as the semiconductor core 21 in the light emitting diode element 12, InGaN can be used as the light emitting layer 22, and p-GaN can be used as the semiconductor shell 23. The light emitting layer 22 may have a multiple quantum well structure, or may be further provided with an AlGaN layer. As another example of the light emitting diode element 12, GaAs, AlGaAs, GaAsP, GaP, ZnSe, AlGaInP and the like can be used.

The maximum size of the light emitting diode element 12 arranged on the substrate 20 is preferably 100 μm or less. This size is smaller than the size of a normal light emitting diode chip (hundreds of μm x hundreds of μm). The size of the light emitting diode element 12 is preferably 100 μm or less for the following reasons.

The first reason is that when a plurality of light emitting diode elements 12 are arranged and wired on the substrate 20, it is easy to use a process of forming a normal integrated circuit or TFT instead of bonding. In this way, by using an integrated circuit or a TFT forming process for wiring, it becomes possible to form a part of the wiring as a fuse 13 as described above. Therefore, the manufacturing cost of the light emitting device 11 can be reduced.

The second reason is that since the size of each of the light emitting diode elements 12 is small, even if the fuse 13 is blown and one light emitting diode element 12 cannot emit light, the change in brightness of the light emitting device 11 is small. is there.

In relation to the second reason, the number of the light emitting diode elements 12 arranged on the substrate 20 is more preferably 100 or more. That is, it is particularly preferable that the maximum size of the light emitting diode elements 12 arranged on the substrate 20 is 100 μm or less, and the number of the light emitting diode elements 12 is 100 or more. By doing so, the change in the brightness of the light emitting device 11 when the fuse 13 is blown and one light emitting diode element 12 cannot emit light becomes about 1% or less, and humans can hardly recognize it. Therefore, the brightness of the light emitting device 11 can be stabilized.

The specific number of the light emitting diode elements 12 arranged on the substrate 20 is that if the size of the light emitting diode elements 12 is, for example, the length of the semiconductor core 21 is 10 μm and the thickness is about 1 μm, the room is illuminated. If this is used, about 100,000 will be required.

As described above, the fuse 13 is a so-called electric fuse that is composed of a first layer wiring narrow portion 24, a via 25, and a second layer wiring narrow portion 26, and utilizes metal electromigration. The narrow portions 24 and 26 of the first and second layer wirings are composed of a part of the first layer wiring located in the lower layer and a part of the second layer wiring located in the upper layer, and the width thereof is wider than the other parts. Is also narrow. The wiring widths of the first and second layer wiring narrow portions 24 and 26 are determined according to the above-mentioned set current value for cutting the fuse 13, and are, for example, 0.1 μm.

As the first layer wiring narrow portion 24, via 25, and the second layer wiring narrow portion 26, for example, a metal thin film containing copper as a main component can be used. The copper-based metal thin film may contain different elements such as Ag, Al, and Au. In addition, barrier metal layers (not shown) containing refractory metals such as Ta, Ti, and W are formed on the side surfaces and bottom surfaces of the first layer wiring narrow portion 24, via 25, and the second layer wiring narrow portion 26. May be good.

As the substrate 20, for example, an insulating substrate such as a glass substrate, a ceramic substrate, and a resin substrate can be used. Alternatively, a substrate whose surface is insulated by coating a resin on an aluminum substrate may be used. Here, it is necessary to insulate the surface of the substrate 20 in order to form the first electrode 29 and the second electrode 30 on the substrate 20.

In FIG. 3, when light is extracted upward, it is desirable to use, for example, an aluminum substrate coated with resin as the substrate 20 so that the light from the light emitting diode element 12 is reflected upward. Further, in FIG. 3, when light is extracted downward, the substrate 20 needs to be transparent, and for example, a glass substrate or a transparent resin substrate can be used.

Further, the substrate 20 needs to be able to withstand the process temperature in the wiring process including the formation of the interlayer insulating films 32 and 33. For example, when a silicon oxide film containing TEOS (tetraethoxysilane) is used as the interlayer insulating films 32 and 33, it is preferable to use a glass substrate or a ceramic substrate as the substrate 20.

As the first electrode 29 and the second electrode 30, metal films such as aluminum, copper, tungsten and gold can be used. Further, as the insulating film 31 covering the first electrode 29 and the second electrode 30, a silicon oxide film containing the TEOS can be used.

As the first interlayer insulating film 32 and the second interlayer insulating film 33, as described above, a silicon oxide film containing TEOS, a transparent resin, or the like can be used.

Further, as the protective film 34, a transparent resin film can be used. If necessary, a phosphor may be dispersed in the protective film 34. For example, as the light emitting diode element 12, a semiconductor core 21 made of n-GaN, a light emitting layer 22 made of InGaN, and a semiconductor shell 23 made of p-GaN are used to form a light emitting diode element 12 that emits light in blue, and a protective film 34 is formed. White light can be obtained by dispersing a phosphor that emits yellow light in it.

As is clear from the above description, in the light emitting device 11 of the present embodiment, a plurality of light emitting diode elements 14 with fuses are formed on a single substrate 20. As a result, a plurality of light emitting diode elements 12 can be collectively arranged on the substrate 20, and a fuse 13 connected in series with the light emitting diode element 12 can also be collectively formed on the substrate 20. Therefore, the manufacturing cost of the light emitting device 11 can be reduced.

Further, in the light emitting device 11 of the present embodiment, a plurality of light emitting diode elements 12 are arranged on the substrate 20, and further, a wiring for connecting the plurality of light emitting diode elements 12 is formed, and a part of the wiring is provided. Consists of fuse 13. As a result, the wiring formed on the substrate 20 has both a role of connecting a plurality of light emitting diode elements 12 and a role of a fuse 13 connected in series with the light emitting diode element 12. Therefore, it is not necessary to add a separate step for forming the fuse 13, and the manufacturing cost of the light emitting device 11 can be further reduced.

The method of forming the light emitting device 11 will be described below.

First, the light emitting diode element 12 is formed by the procedure shown in FIGS. 5 to 8. Here, as an example, the procedure for forming the light emitting diode element 12 made of GaN is shown, but the procedure for forming the light emitting diode element 12 made of another material is also the same.

As shown in FIG. 5, a sapphire substrate 35, which is a substrate different from the substrate 20 in FIGS. 2 and 3, is prepared, a silicon oxide film 36 having an opening is patterned on the sapphire substrate 35, and silicon oxidation is performed. Metal catalyst particles 37 made of nickel are formed in the openings of the membrane 36 where the sapphire substrate 35 is exposed.

Specifically, the silicon oxide film 36 is formed on the sapphire substrate 35 with a thickness of, for example, 1 μm by a CVD (Chemical Vapor Deposition) method. Then, by a photolithography step, an opening having a size of, for example, 1 μm is patterned on the silicon oxide film 36 to expose a part of the surface of the sapphire substrate 35. Specifically, the metal catalyst particles 37 are formed by forming nickel on the entire surface of the sapphire substrate 35 on which the patterned silicon oxide film 36 is formed by sputtering to a thickness of, for example, 3 nm, and annealing at about 900 ° C. As a result, nickel is agglomerated to form.

Next, as shown in FIG. 6, an n-type GaN having a length of, for example, 10 μm is formed on the sapphire substrate 35 at the opening of the silicon oxide film 36 by using a MOCVD (Metal Organic Chemical Vapor Deposition) device. The first conductive type semiconductor core 21 is formed by crystal growth. In that case, set the growth temperature to about 950 ° C, and use trimethylgallium (TMG) and ammonia (NH) as growth gases.₃) Is used to supply silane (SiH) for n-type impurity supply.₄), And hydrogen (H) as a carrier gas.₂) Can be supplied to grow rod-shaped n-type GaN containing Si as an impurity. After forming the rod-shaped semiconductor core 21 made of n-type GaN in this way, it is preferable to remove the metal catalyst particles (nickel) 37 by wet etching.

Here, it is preferable that the sapphire substrate 35 in which the semiconductor core 21 made of the n-type GaN is grown is annealed at a temperature higher than the temperature in which the semiconductor core 21 is grown. The annealing temperature is, for example, higher than 950 ° C and not more than 1200 ° C. As a result, the crystallinity can be improved by recovering the crystal defects of the semiconductor core 21 made of n-type GaN.

Next, as shown in FIG. 7, a light emitting layer 22 made of an InGaN film having a thickness of, for example, 5 nm is formed on the side surface and the upper surface of the rod-shaped semiconductor core 21 made of an n-type GaN film, and further on the light emitting layer 22. In addition, for example, a second conductive type semiconductor shell 23 made of a p-type GaN film having a thickness of 100 nm is formed.

The light emitting layer 22 made of the InGaN film is set to a growth temperature of 750 ° C using a MOCVD apparatus, and TMG, NH as growth gases.₃And using trimethylindium (TMI), H as a carrier gas₂Grow by supplying. A plurality of light emitting layers 22 made of the InGaN film may be laminated with a GaN film or an AlGaN film as a block layer to form a multiple quantum well structure (MQW). This InGaN film may be formed on the silicon oxide film 36, and the InGaN film on the silicon oxide film 36 may be removed later by isotropic dry etching if necessary.

The semiconductor shell 23 made of the above p-type GaN film uses a MOCVD device to set the growth temperature to 800 ° C, and uses TMG and NH as growth gases.₃Using biscyclopentadienyl magnesium (Cp) for p-type impurity supply₂Mg), further as a carrier gas, H₂Grow by supplying.

Next, after removing the silicon oxide film 36 by wet etching with hydrofluoric acid (HF), the sapphire substrate 35 and the rod-shaped structure formed on the surface thereof are immersed in a liquid such as water to obtain an ultrasonic structure. By irradiating with ultrasonic waves, as shown in FIG. 8, the rod-shaped structure is separated from the sapphire substrate 35. In this way, each of the rod-shaped structures separated from the sapphire substrate 35 becomes the light emitting diode element 12.

Next, the light emitting diode element 12 formed by the above procedure is arranged on a substrate 20 for the present light emitting device 11 which is different from the sapphire substrate 35 used when forming the light emitting diode element 12.

First, as shown in FIG. 9, a first electrode 29 and a second electrode 30 (see FIG. 3) are formed on the surface of a substrate 20 such as glass. The first and second electrodes 29 and 30 can be formed using photolithography or printing technology. Although omitted in FIG. 9, pads are formed on the first and second electrodes 29 and 30 so that an electric potential can be applied from the outside. Further, in FIG. 9, in order to make the figure easier to see, the arrangement locations (29a, 30a) where the light emitting diode elements 12 are arranged are 8 × 3, but in reality, an arbitrary number of arrangement locations are provided. FIG. 10 is a cross-sectional view taken along the line BB'in FIG.

Next, the light emitting diode elements 12 are arranged in the portions (29a, 30a) where the first and second electrodes 29 and 30 face each other as follows.

First, as shown in FIG. 10, isopropyl alcohol (IPA) 38 containing the light emitting diode element 12 is thinly coated on the substrate 20. In addition to IPA38, ethylene glycol, propylene glycol, methanol, ethanol, acetone and mixtures thereof may be used. Alternatively, a liquid composed of other organic substances such as water can be used.

However, if a large current flows between the first and second electrodes 29 and 30 through the liquid such as IPA38, a desired voltage difference cannot be applied between the first and second electrodes 29 and 30. In such a case, the entire surface of the substrate 20 is coated with an insulating film 31 having a size of about 10 nm to 30 nm so as to cover the first and second electrodes 29 and 30.

The thickness of the IPA 38 including the light emitting diode element 12 is such that the light emitting diode element 12 can be moved in the IPA 38 so that the light emitting diode element 12 can be arranged in the process of arranging the light emitting diode element 12. is there. Therefore, the thickness of the IPA 38 applied is equal to or greater than the thickness of the light emitting diode element 12, and is, for example, several μm to several mm. If the coating thickness is too thin, the light emitting diode element 12 will not move easily, and if it is too thick, it will take a long time to dry the IPA 38. Moreover, the amount of the light emitting diode element 12 is 1 × 10 with respect to the amount of IPA38.⁴Piece cm^-3~1×10⁷Piece cm^-3Is preferable.

In order to apply IPA38 containing the light emitting diode element 12, a frame is formed around the outer periphery of the first and second electrodes 29 and 30 in which the light emitting diode element 12 is arranged, and the light emitting diode element 12 is placed in the frame. The contained IPA 38 may be filled to a desired thickness. However, when the IPA 38 including the light emitting diode element 12 has viscosity, it can be applied to a desired thickness without using the above frame.

Next, a potential difference of, for example, 1 V is applied between the first and second electrodes 29 and 30. That is, the potential difference between the first and second electrodes 29 and 30 is 0.1V to 10V because the arrangement of the light emitting diode elements 12 becomes poor at 0.1V or less and the insulation between the metal electrodes starts to become a problem at 10V or more. can do. Then, 1V to 5V is more preferable, and further, it is preferably about 1V.

FIG. 11 schematically shows the principle that the light emitting diode element 12 is arranged on the first and second electrodes 29 and 30. As shown in FIG. 11, the potential V is applied to the first electrode 29._LIs applied, and the potential V is applied to the second electrode 30._R(V_L&lt;V_R) Is applied, a negative charge is induced in the first electrode 29, while a positive charge is induced in the second electrode 30. When the light emitting diode element 12 approaches there, a positive charge is induced on the side of the light emitting diode element 12 close to the first electrode 29, while a negative charge is induced on the side close to the second electrode 30. Charges are induced in the light emitting diode element 12 by electrostatic induction. That is, the light emitting diode element 12 placed in the electric field is charged on the surface until the internal electric field becomes zero. As a result, an attractive force acts between the first and second electrodes 29 and 30 and the light emitting diode element 12 due to electrostatic force, and the light emitting diode element 12 generates an electric force between the first and second electrodes 29 and 30. The directions are aligned along the line, and the first and second electrodes 29 and 30 are arranged so as to bridge.

When the first and second electrodes 29 and 30 are coated with the insulating film 31, the electric field in the IPA 38 gradually weakens due to the induction of electric charges on the insulating film 31, so that the light emitting diode element 12 is used. 1, It becomes impossible to stably fix it at the position on the second electrode 29,30. In such a case, as shown in FIG. 12, it is preferable to apply an AC voltage between the first and second electrodes 29 and 30. In FIG. 12, as shown in FIG. 12 (b), the reference potential V is applied to the second electrode 30._RIs applied. On the other hand, as shown in FIG. 12A, the first electrode 29 has an amplitude V._PPL/ 2 AC voltage V_LIs applied. By doing so, the light emitting diode element 12 can be stably arranged on the first and second electrodes 29 and 30.

In this case, the AC voltage V applied to the first electrode 29_LThe frequency of is preferably 10 Hz to 1 MHz, and more preferably 50 Hz to 1 kHz because the arrangement is most stable. Further, the AC voltage applied between the first and second electrodes 29 and 30 is not limited to a sine wave, but may be a periodic wave such as a square wave, a triangular wave, a sawtooth wave, or the like. The above V_PPLIs preferably about 1V.

In this way, after arranging the light emitting diode elements 12 on the first and second electrodes 29 and 30, the IPA 38 is evaporated and dried by heating the substrate 20, and the light emitting diode elements 12 are placed on the first and first electrodes. The electrodes 29 and 30 of 2 are arranged and fixed so as to be bridged. FIG. 13 shows a plan view of the substrate 20 in which the light emitting diode elements 12 are arranged.

Hereinafter, wiring of the light emitting diode elements 12 arranged at predetermined positions on the substrate 20 is performed. First, as shown in FIG. 14, the photoresist 39 is patterned on the substrate 20 so that a part of the light emitting diode element 12 is exposed. Then, in the opening of the photoresist 39, the semiconductor shell 23 and the light emitting layer 22 of the light emitting diode element 12 are removed by etching. For this etching, a dry etching having a strong isotropic property is suitable. After that, the photoresist 39 is removed.

Next, as shown in FIG. 15, a first interlayer insulating film 32 made of a silicon oxide film is applied onto the substrate 20 to a thickness of 2 μm, and then the contact holes 27, are formed in the first interlayer insulating film 32. Open 28. The contact hole 27 exposes a part of the semiconductor shell 23, and the contact hole 28 exposes a part of the semiconductor core 21.

Next, as shown in FIG. 16, after patterning the first layer wiring made of metal on the first interlayer insulating film 32, a second interlayer insulating film made of a silicon oxide film provided with an opening 40 is provided. Form 33. The first-layer wiring is the first-layer wiring narrow portion 24 and the second power supply line 18 that form the fuse 13. The contact holes 27 and 28 are embedded with metal when the first layer wiring is formed to connect the first layer wiring and the light emitting diode element 12.

Finally, as shown in FIG. 17, after patterning the second layer wiring made of metal on the second interlayer insulating film 33, the protective film 34 made of resin is laminated to complete the light emitting device 11. .. The second layer wiring is the second layer wiring narrow portion 26 and the first power supply line 17 that form the fuse 13. The opening 40 is embedded with metal when the second layer wiring is formed, and becomes a via 25 constituting the fuse 13.

As described above, the light emitting device 11 of the present embodiment is configured by connecting a plurality of light emitting diode elements 14 with fuses in which the light emitting diode element 12 and the fuse 13 are connected in series on the substrate 20 in parallel. It has 15 parallel building blocks. Further, one parallel configuration unit 15 or a plurality of parallel configuration units 15 are connected in series to form the light emitting diode element circuit 16. Then, the light emitting diode element circuit 16 is supplied with current from the power supply 19 through the first power supply line 17 and the second power supply line 18.

Therefore, even if any of the light emitting diode elements 12 causes a short circuit failure, the fuse 13 connected to the light emitting diode element 12 that has caused the short circuit failure can be disconnected to cut off the overcurrent. As a result, the light emitting diode element 12 other than the light emitting diode element 12 that has caused the short circuit failure can continuously emit light, and the light emitting device 11 can continue to operate. Therefore, the yield of the light emitting device 11 can be improved and the failure rate can be reduced.

Further, the plurality of fused light emitting diode elements 14 are formed on a single substrate 20. Therefore, after a plurality of light emitting diode elements 12 constituting the plurality of fused light emitting diode elements 14 are collectively arranged on the substrate 20, they are connected in series to each of the arranged plurality of light emitting diode elements 12. The fuses 13 can be formed collectively. As a result, it is not necessary to connect each of the plurality of individually formed fuses 13 in series with each light emitting diode element 12, and the manufacturing cost of the light emitting device 11 can be reduced.

Further, the maximum size of the light emitting diode element 12 is 100 μm or less, and the number is 100 or more. By setting the maximum size of the light emitting diode element 12 to 100 μm or less in this way, an integrated circuit or a TFT forming process can be used when a plurality of light emitting diode elements 12 are arranged and wired on the substrate 20. .. Therefore, a part of the wiring can be made into a fuse 13, and the manufacturing cost of the light emitting device 11 can be reduced. Further, by increasing the number of the light emitting diode elements 12 to 100 or more, the brightness change of the light emitting device 11 when one light emitting diode element 12 becomes incapable of emitting light can be reduced to about 1% or less. Therefore, the brightness of the light emitting device 11 can be stabilized.

Further, a plurality of light emitting diode elements 12 are arranged on the substrate 20, a wiring for connecting the plurality of light emitting diode elements 12 is formed, and a fuse 13 is formed by a part of the wiring. Therefore, the wiring formed on the substrate 20 can serve both as a role of connecting a plurality of light emitting diode elements 12 and as a role of a fuse 13 connected in series with the light emitting diode element 12. As a result, it is not necessary to add a separate step for forming the fuse 13, and the manufacturing cost of the light emitting device 11 can be further reduced.

In the present embodiment, the first layer wiring and the second layer wiring are formed by patterning using thin film film formation and photolithography. However, the present invention is not limited to this, and the so-called damascene process may be used together with the formation of the via 25.

(Modification example) FIG. 18 is a circuit diagram showing a modified example of the light emitting device of the present embodiment.

In FIG. 18, the light emitting device 41 has a light emitting diode element 44 with a fuse, which is configured by connecting a light emitting diode element 42 and a fuse 43 in series. Further, one end of the plurality of fused light emitting diode elements 44 is connected to form a light emitting diode element circuit 45. Here, the fuse 43 cuts off the current when a current exceeding a preset set current flows through the light emitting diode element 42 connected in series with the fuse 43.

A power supply line 46 is connected to one end of the plurality of fused light emitting diode elements 44 connected to each other. Then, a current is supplied from the power supply 47 to the light emitting diode element circuit 45 through the power supply line 46.

The light emitting device 41 of this modification is different from the light emitting device 11 in that the other ends of the plurality of fused light emitting diode elements 44 are not connected to each other, and each of them drives the light emitting diode element 42. It is a point that is connected to. In this case, each control circuit 48 is grounded (connected to the second power line), and the light emitting diode element circuit is passed through the power source 47 to the first power line (power line 46) and the second power line (ground). It can be considered that the current is supplied to 45. In such a configuration, since the control circuit 48 is connected to each light emitting diode element 42, each light emitting diode element 42 can be driven independently.

According to the above configuration, each of the light emitting diode elements 42 is connected in series with a fuse 43 that cuts off the current when a current exceeding the set current flows. Therefore, even if the light emitting diode element 42 causes a short circuit failure, the fuse 43 is disconnected to cut off the overcurrent, and the light emitting diode elements 42 other than the light emitting diode element 42 causing the short circuit failure continue to emit light. be able to. That is, the light emitting device 41 as a whole can continue to operate. Therefore, the yield of the light emitting device 41 can be improved and the failure rate can be reduced.

-Second embodiment FIG. 19 is a circuit diagram of the light emitting device of the present embodiment.

In FIG. 19, the light emitting device 51 of the present embodiment has a light emitting diode element 54 with a fuse in which the light emitting diode element 52 and the fuse 53 are connected in series. Further, a plurality of light emitting diode elements 54 with fuses are connected in parallel to form a parallel configuration unit 55. Here, the fuse 53 cuts off the current when a current exceeding a preset set current flows through the light emitting diode element 52 connected in series with the fuse 53. Further, a plurality of parallel configuration units 55 are connected in series to form a light emitting diode element circuit 56.

A first power supply line 57 and a second power supply line 58 are connected to the light emitting diode element circuit 56. Then, a current is supplied from the power supply 59 to the light emitting diode element circuit 56 through the first power supply line 57 and the second power supply line 58.

The light emitting device 51 in the present embodiment differs from the light emitting device 11 in the first embodiment in that a plurality of parallel configuration units 55 are connected in series to form the light emitting diode element circuit 56.

According to the above configuration, as in the case of the first embodiment, each of the light emitting diode elements 52 is connected in series with a fuse 53 that cuts off the current when a current exceeding the set current flows. ing. Therefore, even if the light emitting diode element 52 causes a short circuit failure, the fuse 53 can be disconnected to cut off the overcurrent. Therefore, the light emitting diode element 52 other than the light emitting diode element 52 that has caused the short circuit failure can continue to emit light. That is, the light emitting device 51 as a whole can continue to operate. Therefore, the yield of the light emitting device 51 can be improved and the failure rate can be reduced.

Further, when n parallel configuration units 55 are connected in series to form the light emitting diode element circuit 56, the drive voltage is higher than that in the case where the light emitting diode element circuit 56 is configured by one parallel configuration unit 55. Is n times, so the current flowing through the first power supply line 57 and the second power supply line 58 becomes 1 / n. Therefore, the amount of heat generated by the first and second power lines 57 and 58 can be reduced. Alternatively, the first and second power lines 57 and 58 can be thinned.

Third embodiment FIG. 20 is a circuit diagram of the light emitting device of the present embodiment. Hereinafter, the light emitting device 61 of the present embodiment will be described with reference to FIG.

In FIG. 20, the difference between the light emitting device 61 of the present embodiment and the light emitting device 51 of the second embodiment is that the potential of the first power supply line 62 is higher than the potential of the second power supply line 63. When the potential of the first light emitting diode element 64 and the second power supply line 63 arranged so as to be in the forward direction is set to be higher than the potential of the first power supply line 62 in the forward direction. It is a point that two light emitting diode elements are provided with the second light emitting diode element 65 arranged so as to be. It is also different in that the AC power supply 67 is connected to the light emitting diode element circuit 66 via the first power supply line 62 and the second power supply line 63.

A fuse 68 is connected in series to each of the first light emitting diode element 64 and the second light emitting diode element 65. Then, the first light emitting diode element 64 and the fuse 68 form the first light emitting diode element 69 with a fuse, and the second light emitting diode element 65 and the fuse 68 form the second light emitting diode element 70 with a fuse. To do. Further, a plurality of light emitting diode elements 69 and 70 with fuses are connected in parallel to form a parallel configuration unit 71.

The light emitting diode element circuit 66 may be configured by one parallel configuration unit 71, or a plurality of parallel configuration units 71 may be connected in series as in the present embodiment. When a plurality of parallel configuration units 71 are connected in series to form the light emitting diode element circuit 66, the amount of heat generated by the first and second power supply lines 62 and 63 can be reduced. Alternatively, the first and second power lines 62 and 63 can be made thinner.

By the way, in the one parallel configuration unit 71, the first light emitting diode element 69 with a fuse and the second light emitting diode element 70 with a fuse are mixed. That is, the first light emitting diode element 64 and the second light emitting diode element 65 are mixed. As described above, there are two methods for mixing the first light emitting diode element 64 and the second light emitting diode element 65.

The first method modifies the step (FIG. 14) of removing a part of the semiconductor shell 23 of the light emitting diode element 12 arranged on the substrate 20 in the method of forming the light emitting device 11 described in the first embodiment. It is something to do. Hereinafter, it will be described with reference to FIG. In FIG. 14, which side of the semiconductor shell 23 on the left or right side of the light emitting diode element 12 is removed can be arbitrarily determined by the pattern of the photoresist 39. Therefore, the pattern of the photoresist 39 is changed so that the side of the light emitting diode element 12 that removes the semiconductor shell 23 is mixed, that is, the power supply connected to the semiconductor shell 23 in the first and second power supply lines 62 and 63. The lines should be mixed.

In the second method, in the method of forming the light emitting device 11 described in the first embodiment, as shown in FIGS. 10 and 13, the light emitting diode element 12 is shown in FIG. 4 before being arranged on the substrate 20. As shown, the light emitting layer 22 and the semiconductor shell 23 on one side of the light emitting diode element 12 are removed in advance. This is obtained, for example, by forming the silicon oxide film 36 thickly when forming the rod-shaped semiconductor core 21, the light emitting layer 22, and the semiconductor shell 23, as shown in FIG. After that, if the light emitting diode element 12 is arranged on the substrate 20, the region (region 21a) where the semiconductor shell 23 is not formed is 50% on which side of the first and second electrodes 62 and 63, respectively. It becomes the probability of. In this way, the first light emitting diode element 64 and the second light emitting diode element 65 are randomly arranged in approximately the same number.

In the second method, when the silicon oxide film 36 is formed thick in advance, for example, when the length of the semiconductor core 21 is 10 μm, the thickness of the silicon oxide film 36 is 2 μm. Therefore, the semiconductor core 21 can be exposed in advance over a length of 2 μm.

According to the configuration of the present embodiment, as in the case of the first embodiment, each of the first light emitting diode element 64 and the second light emitting diode element 65 has a current exceeding the set current. A fuse 68 that cuts off the current when the current flows is connected in series. Therefore, even if the first and second light emitting diode elements 64 and 65 cause a short circuit failure, the fuse 68 can be disconnected to cut off the overcurrent. Therefore, the first and second light emitting diode elements 64 and 65 other than the first and second light emitting diode elements 64 and 65 that have caused the short circuit failure can continue to emit light. That is, the light emitting device 61 as a whole can continue to operate. Therefore, the yield of the light emitting device 61 can be improved and the failure rate can be reduced.

Further, the light emitting diode elements constituting each of the parallel building blocks 71 are arranged so as to be in the forward direction when the potential of the first power supply line 62 is higher than the potential of the second power supply line 63. The second light emitting diode element 65 arranged so as to be in the forward direction when the potential of the first light emitting diode element 64 and the second power supply line 63 is higher than the potential of the first power supply line 62. And are mixed. Therefore, the light emitting diode element circuit 66 can be AC-driven. Therefore, when the AC power source 67 such as a commercial power source is used, the addition of the rectifier circuit can be omitted.

Fourth embodiment The present embodiment relates to a lighting device including any one of the light emitting devices 11, 41, 51, 61 according to the first embodiment to the third embodiment.

FIG. 21 is a side view of the lighting device of the present embodiment. FIG. 22 is a side view of the light emitting module built in the lighting device. FIG. 23 is a plan view of the light emitting module. Hereinafter, an LED bulb will be described as an example of this lighting device.

In FIGS. 21 to 23, the LED bulb 81 is mounted on a square heat radiation plate 83 with any one of the light emitting devices 11, 41, 51, 61 according to the first to third embodiments. It has a built-in light emitting module 82, which is configured by mounting a light emitting device 84. Further, the LED bulb 81 has a base 85 which is a power supply connection part for being fitted into an external socket and connected to a commercial power source, and one end is connected to the base 85 and the diameter is gradually increased toward the other end. It includes a conical heat-dissipating portion 86 and a translucent portion 87 that covers the other end side of the heat-dissipating portion 86.

As described above, the LED bulb 81 of the present embodiment includes any one of the light emitting devices 11, 41, 51, 61 according to the first embodiment to the third embodiment, and thus has a failure rate. Can be lowered.

Fifth embodiment The present embodiment relates to a backlight provided with any one of the light emitting devices 11, 41, 51, 61 in the first embodiment to the third embodiment.

FIG. 24 is a plan view of the backlight of the present embodiment.

In FIG. 24, the backlight 91 is configured by mounting a plurality of light emitting devices 93 in a grid pattern at preset intervals on a rectangular support substrate 92 as an example of a heat radiating plate. .. Here, the light emitting device 93 uses any one of the light emitting devices 11, 41, 51, 61 in the first to third embodiments.

As described above, the backlight 91 of the present embodiment includes any one of the light emitting devices 11, 41, 51, 61 according to the first embodiment to the third embodiment, and thus has a failure rate. Can be lowered.

Sixth embodiment FIG. 25 is a circuit diagram of the self-luminous display of the present embodiment. FIG. 26 is a schematic plan view of one pixel in the self-luminous display. FIG. 27 is a cross-sectional view taken along the line CC'in FIG. 26.

The self-luminous display 101 of the present embodiment is a passive matrix type display, and as shown in FIG. 25, the intersection position of the row address line Xa1, Xa2, Xa3, Xa4 and the column address line Ya1, Ya2, Ya3, Ya4. A light emitting diode element 104 with a fuse, which is formed by connecting a light emitting diode element 102 and a fuse 103 in series, is arranged in each of the above to form a pixel. Here, the fuse 103 cuts off the current when a current exceeding a preset set current flows through the light emitting diode element 102 connected in series with the fuse 103.

That is, the row address line X or the column address line Y functions as a common power supply line for a plurality of fused light emitting diode elements 104 connected to the same row address line X or the same column address line Y. Current is supplied from a current source (not shown) through this common power line.

Here, when the light emitting diode element 102 causes a short circuit failure, if the fuse 103 does not exist, it is connected to at least the same row address line X or the same column address line Y as the light emitting diode element 102 that caused the short circuit failure. All of the light emitting diode elements 102 that are present cause a light emission failure, resulting in a line failure. However, since the fuse 103 is connected in series to the light emitting diode element 102 belonging to each pixel, when the light emitting diode element 102 causes a short circuit failure, the fuse 103 is disconnected and the line failure can be prevented. It is.

The light emitting diode element 104 with a fuse constituting each pixel is pulse-driven by designating a specific row address line X and a specific column dress line Y, as in the case of a normal passive matrix type display.

As shown in FIG. 25, when only one light emitting diode element 104 with a fuse is arranged in each of the pixels, the self-luminous display 101 functions as a monochrome display. Further, when three or four light emitting diode elements with fuses corresponding to the three primary colors of RGB or the four primary colors of RGBY are regularly arranged in each of the above pixels, the self-luminous display 101 functions as a color display. Will be possible.

As described above, in the self-luminous display 101, fuses 103 that cut off the current when a current exceeding the set current flows are connected in series to each of the light emitting diode elements 102 constituting each pixel. Therefore, even if the light emitting diode element 102 belonging to a certain pixel causes a short circuit failure, the connected fuse 103 can be disconnected to cut off the overcurrent. Therefore, the light emitting diode element 102 belonging to another pixel connected to the row address line X or the column address line Y to which the light emitting diode element 102 having a short circuit failure is connected can continuously emit light. That is, it is possible to prevent a line defect from occurring due to a short-circuit defect of one light emitting diode element 102. Therefore, the yield of the self-luminous display 101 can be improved and the failure rate can be reduced.

Hereinafter, preferred embodiments of the self-luminous display 101 according to the present embodiment will be described in detail.

As shown in FIGS. 26 and 27, in the self-luminous display 101 of the present embodiment, the light emitting diode element 102 is arranged for each pixel on the substrate 105.

Similar to FIG. 4 in the first embodiment, the light emitting diode element 102 surrounds the rod-shaped first conductive type semiconductor core 106 with the light emitting layer and the second conductive type semiconductor shell 107 in this order. It has a covered structure. One end of the rod-shaped semiconductor core 106 is exposed from the semiconductor shell 107.

As shown in FIG. 27, two layers of wiring are formed on the substrate 105, and a part of the first layer wiring located in the lower layer constitutes the row address line 109, and the second layer located in the upper layer. Part of the wiring constitutes column address line 108. The column address line 108 or row address line 109 is shared by pixels located in the same column or row as shown in FIG. 25 and is connected to each driver (not shown).

The column address line 108 includes a second layer wiring narrow portion 112 which is composed of another part of the second layer wiring and protrudes from the column address line 108, the second layer wiring and the first layer wiring. A light emitting diode is provided through a via 111, a narrow portion 110 of the first layer wiring which is composed of the other part of the first layer wiring and is separated from the row address line 109, and a contact hole 113. It is connected to the semiconductor shell 107 of the element 102. On the other hand, the row address line 109 is connected to the semiconductor core 106 of the light emitting diode element 102 via the contact hole 114.

The first layer wiring narrow portion 110, via 111, and the second layer wiring narrow portion 112 constitute a fuse 103, and are connected in series with the light emitting diode element 102. In this way, as described above, the light emitting diode element 102 and the fuse 103 form the light emitting diode element 104 with a fuse.

As shown in FIG. 27, the first electrode 115 and the second electrode 116 are formed on the substrate 105 where the light emitting diode element 102 is arranged, and the first electrode 115 And the second electrode 116 is covered with an insulating film 117. The first electrode 115 and the second electrode 116 are used when the light emitting diode element 102 is arranged on the substrate 105, and after the light emitting diode element 102 is arranged, the electrodes and wirings are used. Is not used as. The method of arranging the light emitting diode element 102 on the substrate 105 is the same as the method described with reference to FIGS. 9 to 13 in the first embodiment.

A transparent first interlayer insulating film 118 is formed between the first layer wiring and the substrate 105 and between the first layer wiring and the light emitting diode element 102. Further, a transparent second interlayer insulating film 119 is formed between the first layer wiring and the second layer wiring. Further, a transparent protective film 120 is formed on the second layer wiring.

Here, when the self-luminous display 101 functions as a color display, for example, the light emitting diode element 102 for blue and the light emitting diode element 102 for green include an InGaN light emitting layer, a GaN semiconductor shell, and a semiconductor shell. A light emitting diode element composed of is used. Further, as the light emitting diode element 102 for red, a light emitting diode element made of GaAs is used.

The maximum size of the light emitting diode element 102 arranged on the substrate 105 is preferably 100 μm or less. This size is smaller than the size of a normal light emitting diode chip (hundreds of μm x hundreds of μm). The size of the light emitting diode element 102 is preferably 100 μm or less for the following reasons.

The first reason is that when a plurality of light emitting diode elements 102 are arranged and wired on the substrate 105, it is easy to use a normal integrated circuit or a TFT forming process instead of bonding. In this way, by using an integrated circuit or a TFT forming process for wiring, it is possible to form a part of the wiring as a fuse 103 as described above. Therefore, the manufacturing cost of the self-luminous display 101 can be reduced.

The second reason is that the light emitting diode element 102 for the self-luminous display 101 can obtain sufficient brightness with a fine size of 100 μm or less, and self-luminous by using the fine light emitting diode element 102. This is because the manufacturing cost of the display 101 can be reduced. This is especially important for the self-luminous display 101, which requires a large number of light emitting diode elements 102.

The structure and operating principle of the fuse 103 are the same as those of the fuse 13 in the first embodiment. Further, the structures and operating principles of the substrate 105, the first and second electrodes 115,116, the first and second interlayer insulating films 118,119, and the protective film 120 are the same as in the case of the first embodiment. Further, the method of forming the light emitting diode element 102, the method of arranging the light emitting diode element 102 on the substrate 105, the method of forming the wiring on the substrate 105, and the like are the same as in the case of the first embodiment.

As described above, in the self-luminous display 101 of the present embodiment, each pixel arranged in a matrix at the intersection of a plurality of row address lines X and a plurality of column address lines Y is provided with a light emitting diode element 102 and a fuse 103. Is composed of a plurality of light emitting diode elements 104 with fuses connected in series.

Therefore, even if the light emitting diode element 102 constituting a certain pixel causes a short circuit failure, the fuse 103 connected to the light emitting diode element 102 that has caused the short circuit failure can be disconnected to cut off the overcurrent. As a result, the light emitting diode element 102 belonging to the pixel to which the light emitting diode element 102 that has caused the short circuit failure belongs and another pixel that shares the row address line X or the column address line Y can continuously emit light, and one light emitting diode element. It is possible to prevent a line defect from occurring due to a short circuit defect of 102. Therefore, the yield of the self-luminous display 101 can be improved and the failure rate can be reduced.

Further, a plurality of light emitting diode elements 102 are arranged on the substrate 105, a wiring for connecting the plurality of light emitting diode elements 102 is formed, and a fuse 103 is formed by a part of the wiring. Therefore, the wiring formed on the substrate 105 can serve both as a role of connecting a plurality of light emitting diode elements 102 and as a role of a fuse 103 connected in series with the light emitting diode element 102. As a result, it is not necessary to add a separate step for forming the fuse 103, and the manufacturing cost of the self-luminous display 101 can be reduced.

Further, the maximum dimension of the light emitting diode element 102 is set to 100 μm or less. By setting the maximum size of the light emitting diode element 102 to 100 μm or less in this way, an integrated circuit or a TFT forming process can be used when a plurality of light emitting diode elements 102 are arranged and wired on the substrate 105. .. Therefore, a part of the wiring can be made into a fuse 103, and the manufacturing cost of the self-luminous display 101 which requires a very large number of light emitting diode elements 102 can be reduced.

(Modification example) FIG. 28 is a circuit diagram showing a modified example of the self-luminous display of the present embodiment.

In FIG. 28, the self-luminous display 121 is a passive matrix type display, and as shown in FIG. 28, the light emitting diode element 122 and the fuse 123 are located at the intersections of the row address line Xb1 and the column address line Yb1. A plurality of light emitting diode elements 124 with fuses, which are connected in series, are arranged to form one pixel. Here, the fuse 123 cuts off the current when a current exceeding a preset set current flows through the light emitting diode element 122 connected in series with the fuse 123. Note that FIG. 28 shows a circuit with only one pixel for simplification of display.

The self-luminous display 121 of this modification is different from the self-luminous display 101 in that a plurality of light emitting diode elements 124 with fuses are connected in parallel in each pixel.

According to the above configuration, a fuse 123 that cuts off the current when the set current is exceeded is connected in series to each of the light emitting diode elements 122 constituting each pixel. Therefore, even if the light emitting diode element 122 belonging to a certain pixel causes a short circuit failure, the fuse 123 is disconnected to cut off the overcurrent, and the light emitting diode element 122 belonging to another pixel can continue to emit light. .. Therefore, it is possible to prevent a line defect caused by a short-circuit defect of the light emitting diode element 122.

Further, even in the pixel to which the light emitting diode element 122 that has caused the short circuit failure belongs, the light emitting diode element 122 other than the light emitting diode element 122 that has caused the short circuit failure can continue to emit light. That is, it is possible to prevent not only line defects due to short-circuit defects of the light emitting diode element 122 but also pixel defects.

Therefore, according to this modification, the yield of the self-luminous display 121 can be further improved and the failure rate can be further reduced.

The number of parallel light emitting diode elements 124 with fuses constituting each of the above pixels is preferably 5 or more and 20 or less. When the number of parallels is less than 5, the change in brightness of the corresponding pixel when one light emitting diode element 122 causes a short-circuit failure becomes large, and when the number of parallels exceeds 20, the number of light emitting diode elements 122 This is because the cost increase due to the increase in the number of LEDs will increase.

Seventh embodiment FIG. 29 is a circuit diagram of the self-luminous display of the present embodiment. FIG. 30 is a schematic plan view of one pixel in the self-luminous display. FIG. 31 is a cross-sectional view taken along the line D-D'in FIG. 30. FIG. 32 is a cross-sectional view taken along the line E-E'in FIG. 30. FIG. 33 is a cross-sectional view taken along the line FF'in FIG. 30.

The self-luminous display 131 of the present embodiment is an active matrix type display, and as shown in FIG. 29, the light emitting diode elements 132 are located at the intersections of the row address lines Xc1 and Xc2 and the column address lines Yc1 and Yc2, respectively. A light emitting diode element 134 with a fuse, which is formed by connecting a fuse 133 and a fuse 133 in series, is arranged together with transistors T1 and T2 and a capacitor C to form a pixel. In addition, power lines VS1 and VS2 are arranged in the row direction corresponding to the row of each pixel. Here, the fuse 133 cuts off the current when a current exceeding a preset set current flows through the light emitting diode element 132 connected in series with the fuse 133.

A selective voltage pulse is supplied to the row address lines Xc1 and Xc2, and a data signal is sent to the column address lines Yc1 and Yc2. Then, when the selective voltage pulse is input to the gate of the transistor T1 and the transistor T1 is turned on, the data signal is transmitted from the source of the transistor T1 to the drain and stored as a voltage in the capacitor C. The transistor T2 is a driving transistor for the light emitting diode element 132.

The light emitting diode element 132 is connected to a power supply Vs (not shown) via the transistor T2 and the power supply line VS1. Therefore, the light emitting diode element 132 is driven by the power supply Vs when the transistor T2 is turned on by the data signal from the transistor T1. Then, the current flowing from the power supply Vs to the light emitting diode element 134 with a fuse further flows to the common ground electrode.

That is, one end of the fused light emitting diode element 134 of each pixel is connected to a common power supply line (not shown) via the transistor T2 and the power supply lines VS1 and VS2, while the other end is a common ground electrode. It is connected to (common power line). In other words, all the fused light emitting diode elements 134 are connected to a common power supply line and receive current from the power supply Vs.

Here, when the light emitting diode element 132 causes a short-circuit failure, if the fuse 133 does not exist, the other light emitting diode element 132 causes a light emission failure, resulting in a fatal failure. However, since the fuse 133 is connected in series to the light emitting diode element 132 belonging to each pixel, when the light emitting diode element 132 causes a short circuit failure, the fuse 133 is disconnected to prevent a fatal failure. Can be done.

As shown in FIG. 29, when only one light emitting diode element 134 with a fuse is arranged in each of the pixels, the self-luminous display 131 functions as a monochrome display. Further, when three or four light emitting diode elements with fuses corresponding to the three primary colors of RGB or the four primary colors of RGBY are regularly arranged in each of the above pixels, the self-luminous display 131 functions as a color display. Will be possible.

As described above, in the self-luminous display 131, fuses 133 that cut off the current when a current exceeding the set current flows are connected in series to each of the light emitting diode elements 132 constituting each pixel. Therefore, even if the light emitting diode element 132 belonging to a certain pixel causes a short circuit failure, the connected fuse 133 can be disconnected to cut off the overcurrent. Therefore, the light emitting diode element 132 belonging to the other pixels can continuously emit light. That is, it is possible to prevent a serious defect from being caused by a short-circuit defect of one light emitting diode element 132. Therefore, the yield of the self-luminous display 131 can be improved and the failure rate can be reduced.

Hereinafter, preferred embodiments of the self-luminous display 131 according to the present embodiment will be described in detail.

As shown in FIGS. 30 to 33, in the self-luminous display 131 of the present embodiment, the light emitting diode element 132 is arranged for each pixel on the substrate 135.

Similar to FIG. 4 in the first embodiment, the light emitting diode element 132 surrounds the rod-shaped first conductive type semiconductor core 136 with the light emitting layer and the second conductive type semiconductor shell 137 in this order. It has a covered structure. Then, one end of the rod-shaped semiconductor core 136 is exposed from the semiconductor shell 137.

As shown in FIGS. 31 and 32, on the substrate 135, four layers of wiring, that is, the first layer wiring, the second layer wiring, the third layer wiring, and the fourth layer wiring, are arranged in this order from the bottom layer to the top layer. Is formed.

The first layer wiring is made of a metal film, and includes row address lines 138, gate electrodes of transistors T1 and T2, pad electrodes 139 of capacitor C, and a part of the wiring from the drain electrode of transistor T1 to the gate electrode of transistor T2. It constitutes a pad electrode 140 and a first layer wiring narrow portion 141 that is a part of the fuse 133.

The second layer wiring is made of a polycrystalline silicon film, and has a column address line 142, a power supply line 143, a counter electrode 144 of the capacitor C, a source electrode of the transistor T1, a channel region 145, a drain electrode, and a source electrode of the transistor T2. It constitutes the channel region 146 and the drain electrode. The second layer wiring made of polycrystalline silicon contains 10 n-type impurities in the region used as wiring or electrodes.²⁰cm^-3Degree of doping. On the other hand, the region used as the channel region 145 of the transistor T1 and the channel region 146 of the transistor T2 is undoped.

The third layer wiring is made of a metal film and constitutes a third layer wiring narrow portion 147 that is a part of the fuse 133.

The fourth layer wiring is made of a transparent ITO (Indium Tin Oxide) film, and constitutes a common ground electrode 148.

The column address line 142 is connected to the gate electrode of the transistor T2 via the transistor T1 and the contact hole 149. Further, the column address line 142 is connected to one electrode (counter electrode 144) of the capacitor C via the transistor T1. The other electrode (pad electrode 139) facing the one electrode of the capacitor C is connected to the common ground electrode 148 via the contact hole 150.

The first layer wiring narrow portion 141, via 151, and the third layer wiring narrow portion 147 form a fuse 133, and are connected in series with the light emitting diode element 132. The light emitting diode element 132 and the fuse 133 constitute the light emitting diode element 134 with a fuse.

The power supply line 143 is connected to the semiconductor shell 137 of the light emitting diode element 132 via the transistor T2 and the contact hole 152. One end of the fuse 133 is connected to the semiconductor core 136 of the light emitting diode element 132, and the other end is connected to the common ground electrode 148 via the contact hole 153.

A first electrode 154 and a second electrode 155 are formed on the substrate 135 where the light emitting diode element 132 is arranged, and the first electrode 154 and the second electrode 155 are It is covered with an insulating film 156. The first electrode 154 and the second electrode 155 are used when the light emitting diode element 132 is arranged on the substrate 135, and after the light emitting diode element 132 is arranged, the electrodes and wirings are used. It is not used as. The method of arranging the light emitting diode element 132 on the substrate 135 is the same as the method described with reference to FIGS. 9 to 13 in the first embodiment.

Transparent first interlayer insulation between the second layer wiring and the substrate 135, between the second layer wiring and the first layer wiring, and between the second layer wiring and the light emitting diode element 132. A film 157 is formed. Further, a transparent second interlayer insulating film 158 is formed between the third layer wiring and the second layer wiring. Further, a transparent third interlayer insulating film 159 is formed between the fourth layer wiring and the third layer wiring.

The structure and operating principle of the fuse 133 are the same as those of the fuse 13 in the first embodiment. Further, the structure and operating principle of the substrate 135, the first and second electrodes 154,155, and the first and second interlayer insulating films 157,158 are the same as in the case of the first embodiment. Further, the method of forming the light emitting diode element 132 and the method of arranging the light emitting diode element 132 on the substrate 135 are the same as those in the first embodiment. Further, the wiring forming method on the substrate 135 is different from the case of the sixth embodiment in that the wiring has four layers, but it can be performed by using a normal TFT process and an IC process.

As described above, in the self-luminous display 131 of the present embodiment, each pixel arranged in a matrix at the intersection of a plurality of row address lines Xc and a plurality of column address lines Yc is formed by a light emitting diode element 132 and a fuse 133. Is configured to include a light emitting diode element 134 with a fuse connected in series.

Therefore, even if the light emitting diode element 132 constituting a certain pixel causes a short circuit failure, the fuse 133 connected to the light emitting diode element 132 having the short circuit failure can be disconnected to cut off the overcurrent. As a result, the light emitting diode element 132 belonging to another pixel different from the pixel to which the light emitting diode element 132 causing the short circuit failure can continuously emit light, and a fatal defect is caused by the short circuit failure of one light emitting diode element 132. It is possible to prevent it from occurring. Therefore, the yield of the self-luminous display 131 can be improved and the failure rate can be reduced.

Further, a plurality of light emitting diode elements 132 are arranged on the substrate 135, a wiring for connecting the plurality of light emitting diode elements 132 is formed, and a fuse 133 is formed by a part of the wiring. Therefore, the wiring formed on the substrate 135 can serve both as a role of connecting a plurality of light emitting diode elements 132 and as a role of a fuse 133 connected in series with the light emitting diode element 132. As a result, it is not necessary to add a separate step for forming the fuse 133, and the manufacturing cost of the self-luminous display 131 can be reduced.

Further, by setting the maximum size of the light emitting diode element 132 to 100 μm or less, an integrated circuit or a TFT forming process can be used when a plurality of light emitting diode elements 132 are arranged and wired on the substrate 135. Therefore, a part of the wiring can be made into a fuse 133, and the manufacturing cost of the self-luminous display 131 which requires a very large number of light emitting diode elements 132 can be reduced.

In the case of this embodiment as well, as in the case of the modified example (FIG. 28) of the sixth embodiment, each pixel is configured to include a plurality of fused light emitting diode elements connected in parallel. It is also possible to do.

11,41,51,61,84,93 ... Light emitting device, 12,42,52,64,65,102,122,132 ... light emitting diode element, 13,43,53,68,103,123,133 ... Hughes, 14,44,54,69,70,104,124,134 ... Light emitting diode element with fuse, 15,55,71 ... Parallel building blocks, 16,45,56,66 ... Light emitting diode element circuit, 17,18,46,57,58,62,63,143 ... Power line, 19,47,59 ... power supply, 20,105,135 ... board, 21,106,136 ... Semiconductor core, 22 ... light emitting layer, 23,107,137 ... semiconductor shell, 24,110,141 ... 1st layer wiring narrow part, 25,111,151 ... Via, 26,112 ... 2nd layer wiring narrow part, 27,28,113,114,149,150,152,153 ... contact holes, 29,30,115,116,154,155 ... Electrodes, 31,117,156 ... Insulating film, 32,33,118,119,157,158,159 ... interlayer insulating film, 34,120 ... protective film, 35 ... Sapphire board, 36 ... Silicon oxide film, 37 ... Metal catalyst grains, 38 ... Isopropyl Alcohol (IPA), 48 ... control circuit, 67 ... AC power supply, 81 ... LED bulb, 82 ... Luminous module, 91 ... Backlight, 92 ... Support board, 101,121,131 ... Self-luminous display, 108,142 ... column address line, 109,138 ... line address line, 139 ... Capacitor pad electrode, 140 ... pad electrode, 144 ... Capacitor counter electrode, 145,146 ... channel area, 147 ... 3rd layer wiring narrow part, 148 ... Ground electrode, T1, T2 ... Transistor, C ... Capacitor.