Lead frame with resin, lead frame, semiconductor device, and method for manufacturing the lead frame

The present invention relates to a lead frame with a resin used for mounting an LED element, a lead frame, a semiconductor device provided with such a lead frame, and a method for manufacturing a lead frame with a resin.

Conventionally, lighting devices that use LED (light emitting diode) elements as a light source have been used for various home appliances, OA equipment, indicator lights for vehicle equipment, general lighting, in-vehicle lighting, displays, and the like. Some such lighting devices include a semiconductor device having a lead frame and an LED element.

As such a semiconductor device, for example, Patent Document 1 discloses a PLCC type semiconductor device. In Patent Document 1, a PLCC type semiconductor device has a structure for holding a lead frame and a dome-shaped capsule material for sealing an LED die.

<p><patcit num="1"><text>Japanese Unexamined Patent Publication No. 2007-49167</text></patcit></p>

<p> By the way, in recent years, there has been a demand for further thinning of semiconductor devices including LED elements. Therefore, the LED element is mounted in a thin semiconductor device (for example, SON type). However, in such a thin semiconductor device, since the contact area between the outer resin portion and the lead frame is very small, there is a problem that the outer resin portion easily falls off from between the die pad and the lead portion.</p><p> Further, it is essential that the resin (sealing resin portion) for molding the LED element is transparent, and it is difficult to select a material having sufficient adhesion to the lead frame. Therefore, in a semiconductor device including an LED element, a lead frame that is more improved in preventing resin from falling off than a normal resin mold package for semiconductors is required.</p><p> The present invention has been made in consideration of such a point, and is capable of preventing the outer resin portion from falling off from the space between the die pad and the lead portion, a lead frame with resin, a lead frame, and a semiconductor. It is an object of the present invention to provide a method for manufacturing an apparatus and a lead frame with resin.</p>

<p> According to the present invention, in a lead frame with resin provided with a die pad on which an LED element is placed and a lead portion provided around the die pad via a space , the die pad and the lead portion face each other with respect to each other via the space. A lead with a resin having a facing surface, the facing surface of the die pad and the facing surface of the lead portion are each formed in an uneven shape, and an outer resin portion is provided to fill the space between the die pad and the lead portion. It is a frame.</p><p> In the present invention, among the facing surfaces of the lead portion, the upper end thereof and the substantially central portion in the thickness direction of the lead portion are formed with protrusions protruding toward the space, so that the facing surface of the lead portion is uneven. It is a lead frame with a resin, which is characterized in that it is formed in.</p><p> In the present invention, among the facing surfaces of the lead portion, the facing surface of the lead portion is formed in an uneven shape by forming protrusions protruding toward the space at the upper end and the lower end thereof, respectively. It is a characteristic lead frame with resin.</p><p> In the present invention, the die pad has a base portion and a stretched portion that extends from the base portion toward the lead portion and is thinner than the base portion, and the facing surface of the die pad is formed at the tip of the stretched portion. The lead frame with resin is characterized in that the facing surfaces of the die pads are formed in an uneven shape by forming protrusions on the facing surfaces.</p><p> According to the present invention, in a lead frame including a die pad on which an LED element is placed and a lead portion provided around the die pad via a space, the die pad and the lead portion face each other with respect to each other via the space. The lead frame is characterized in that the facing surface of the die pad and the facing surface of the lead portion are each formed in an uneven shape to prevent the outer resin portion filled in the space from falling off.</p><p> The present invention includes a lead frame, an LED element mounted on a die pad of the lead frame, a conductive portion that electrically connects the lead portion of the lead frame and the LED element, and a recess surrounding the LED element. It is characterized by having an outer resin portion that fills the space between the die pad and the lead portion of the lead frame, and a sealing resin portion that is filled in the recess of the outer resin portion and seals the LED element and the conductive portion. It is a semiconductor device.</p><p> The present invention is a lead frame with a resin having a die pad on which an LED element is placed, a lead portion provided around the die pad via a space, and an outer resin portion that fills the space between the die pad and the lead portion. In the manufacturing method, a step of preparing a metal substrate, a step of forming etching resist layers on the front and back surfaces of the metal substrate, a step of etching the front and back surfaces of the metal substrate using the etching resist layer as an corrosion resistant film, and a die pad. A step of providing an outer resin portion that fills the space between the lead portion and the lead portion is provided. This is a method for manufacturing a lead frame with a resin, characterized in that the facing surfaces of the lead portions are each formed in an uneven shape.</p>

<p> According to the present invention, since the facing surface of the die pad and the facing surface of the lead portion are formed in an uneven shape, it is possible to prevent the outer resin portion from falling off from between the die pad and the lead portion. This makes it possible to further reduce the thickness of the semiconductor device including the LED element.</p>

<figref num="1">FIG. 5 is a cross-sectional view showing a lead frame according to the first embodiment of the present invention.</figref><figref num="2">The cross-sectional view which shows the lead frame with resin by 1st Embodiment of this invention.</figref><figref num="3">FIG. 5 is a cross-sectional view showing a semiconductor device according to the first embodiment of the present invention.</figref><figref num="4">The cross-sectional view which shows the manufacturing method of the lead frame by 1st Embodiment of this invention.</figref><figref num="5">The figure which shows the etching process in the manufacturing method of the lead frame by 1st Embodiment of this invention.</figref><figref num="6">The cross-sectional view which shows the manufacturing method of the lead frame with resin by 1st Embodiment of this invention.</figref><figref num="7">The cross-sectional view which shows the manufacturing method of the semiconductor device by 1st Embodiment of this invention.</figref><figref num="8">FIG. 5 is a cross-sectional view showing a lead frame, a lead frame with resin, and a semiconductor device according to a second embodiment of the present invention.</figref><figref num="9">The figure which shows the etching process in the manufacturing method of the lead frame by 2nd Embodiment of this invention.</figref><figref num="10">FIG. 5 is a cross-sectional view showing a lead frame, a lead frame with resin, and a semiconductor device according to a third embodiment of the present invention.</figref>

(First Embodiment) Hereinafter, the first embodiment of the present invention will be described with reference to FIGS. 1 to 7.

<u style="single">Lead frame configuration</u> First, the outline of the lead frame according to the present embodiment will be described with reference to FIG. FIG. 1 is a cross-sectional view showing a lead frame according to the present embodiment.

As shown in FIG. 1, the LED lead frame 10 (hereinafter, also referred to as a lead frame 10) is used for mounting the LED element 21 (described later). Such a lead frame 10 includes a die pad 11 having a mounting surface 11a on which the LED element 21 is mounted, and a lead portion 12 provided around the die pad 11 via a space 13.

The die pad 11 and the lead portion 12 are formed by etching one metal substrate. Examples of the material of the die pad 11 and the lead portion 12 include copper, a copper alloy, and a 42 alloy (Ni 41% Fe alloy). The thickness of the die pad 11 and the lead portion 12 is preferably 0.05 mm to 0.5 mm, although it depends on the configuration of the semiconductor device.

The die pad 11 has a base portion 11b and an extension portion 11c extending from the base portion 11b toward the lead portion 12 side. Of these, a first outer lead portion 27 connected to an external electrode (not shown) is provided on the back surface (lower surface) of the base portion 11b. Further, the stretched portion 11c is thinner than the base portion 11b and is a portion that is not exposed to the outside from the outer resin portion 23 described later. The thickness of the stretched portion 11c can be, for example, 0.025 mm to 0.25 mm.

A bonding surface 12a to which a bonding wire 22 described later is connected is formed on the surface of the lead portion 12 (upper surface in FIG. 1). Further, on the back surface of the lead portion 12 (lower surface in FIG. 1), a second outer lead portion 28 connected to an external electrode (not shown) is provided.

By the way, the die pad 11 and the lead portion 12 have facing surfaces 14 and 15 facing each other via the space 13, respectively.

Of these, the facing surface 14 of the die pad 11 is formed at the tip of the above-mentioned stretched portion 11c. Protrusions 16a and 16b are formed on the upper end (surface side) and the lower end of the facing surface 14, respectively, and these protrusions 16a and 16b both project toward the space 13. Since the protrusions 16a and 16b are formed on the facing surface 14 in this way, the facing surface 14 is formed in an uneven shape.

On the other hand, protrusions 17a and 17b are formed on the facing surface 15 of the lead portion 12 at the upper end (front surface side) thereof and at the substantially central portion in the thickness direction of the lead portion 12, respectively. Both of these protrusions 17a and 17b project toward the inside of the space 13. Since the protrusions 17a and 17b are formed on the facing surface 15, the facing surface 15 is formed in an uneven shape.

As described above, the facing surface 14 of the die pad 11 and the facing surface 15 of the lead portion 12 are formed in an uneven shape, so that the outer resin portion 23 filled in the space 13 can be prevented from falling off, as will be described later. Can be prevented. Further, the stretched portion 11c of the die pad 11 is formed on the surface side, so that the area of the mounting surface 11a of the die pad 11 can be widened, and the light reflecting surface that reflects the light of the LED element 21 can be widened. Has advantages.

<u style="single">Configuration of lead frame with resin</u> Next, with reference to FIG. 2, the outline of the lead frame with resin according to the present embodiment will be described. FIG. 2 is a cross-sectional view showing a lead frame with a resin according to the present embodiment.

As shown in FIG. 2, the resin-attached lead frame 30 includes a lead frame 10 shown in FIG. 1 and an outer resin portion 23 that fills a space 13 between the die pad 11 and the lead portion 12 of the lead frame 10. .. The lead frame 10 and the outer resin portion 23 are integrally bonded to each other.

Of these, the outer resin portion 23 includes a buried resin portion 23a embedded in the space 13 between the die pad 11 and the lead portion 12, and a protruding resin portion 23b projecting above the lead frame 10.

The buried resin portion 23a has an upper surface 23d and a lower surface 23e. Of these, the upper surface 23d is located on substantially the same plane as the mounting surface 11a of the die pad 11 and the bonding surface 12a of the lead portion 12. The lower surface 23e is located on substantially the same plane as the first outer lead portion 27 of the die pad 11 and the second outer lead portion 28 of the lead portion 12.

On the other hand, the projecting resin portion 23b is formed so as to surround the mounting surface 11a of the die pad 11 and the bonding surface 12a of the lead portion 12, and has a recess 23c. The height of the projecting resin portion 23b can be 0.1 mm to 0.5 mm.

Further, a plating layer 25 is formed on the surface of the lead frame 10. The plating layer 25 functions as a reflective layer for reflecting the light from the LED element 21. The structure of the plating layer 25 is not limited as long as it functions as a reflective layer, but may include, for example, a copper plating layer as a base layer and a silver plating layer for reflection on the copper plating layer. The thickness of the plating layer 25 is preferably, for example, 1 μm to 5 μm.

It should be noted that the lead frame 30 with resin may be configured so that such a plating layer 25 is not formed on the surface of the lead frame 10.

<u style="single">Semiconductor device configuration</u> Next, the semiconductor device according to the present embodiment will be described with reference to FIG. FIG. 3 is a cross-sectional view showing a semiconductor device (SON type) according to the present embodiment.

As shown in FIG. 3, the semiconductor device 20 includes a lead frame 10 shown in FIG. 1, an LED element 21 mounted on the mounting surface 11a of the die pad 11 of the lead frame 10, and a lead portion 12 of the lead frame 10. It is provided with a bonding wire (conductive portion) 22 that electrically connects the LED element 21 and the LED element 21.

Of these, a plating layer 25 is formed on the surface of the lead frame 10. As described above, the plating layer 25 functions as a reflective layer for reflecting the light from the LED element 21.

Further, the outer resin portion 23 (buried resin portion 23a) fills the space 13 between the die pad 11 and the lead portion 12 of the lead frame 10. Further, the LED element 21 and the bonding wire 22 are surrounded by the outer resin portion 23 (protruding resin portion 23b).

Further, the LED element 21 and the bonding wire 22 are sealed by a translucent sealing resin portion 24. The sealing resin portion 24 is filled in the recess 23c of the outer resin portion 23.

Hereinafter, each component constituting such a semiconductor device 20 will be sequentially described.

The lead frame 10 includes a die pad 11 and a lead portion 12 provided around the die pad 11 via a space 13. Since the configuration of the lead frame 10 has already been described with reference to FIG. 1, detailed description thereof will be omitted here.

The LED element 21 selects an emission wavelength from ultraviolet light to infrared light by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, AlInGaP, or InGaN as the light emitting layer. Can be done. As such an LED element 21, a commonly used LED element 21 can be used.

Further, the LED element 21 is fixed to the mounting surface 11a of the die pad 11 (strictly speaking, on the plating layer 25) in the recess 23c of the outer resin portion 23 by soldering or die bonding paste. When a die bonding paste is used, it is possible to select a die bonding paste made of a light-resistant epoxy resin or silicone resin.

The bonding wire 22 is made of a highly conductive material such as gold, and one end thereof is connected to the terminal portion 21a of the LED element 21 and the other end is connected to the bonding surface 12a of the lead portion 12 of the lead frame 10. Has been done.

The outer resin portion 23 is formed, for example, by injection molding or transfer molding a thermoplastic resin on the lead frame 10. The shape of the outer resin portion 23 can be variously realized by designing the mold used for injection molding or transfer molding. For example, the overall shape of the outer resin portion 23 can be a rectangular parallelepiped, a cylindrical shape, a cone shape, or the like. The bottom surface of the recess 23c can be circular, elliptical, rounded rectangular, polygonal, or the like. The cross-sectional shape of the side wall of the recess 23c may be formed of a straight line or a curved line as shown in FIG.

As for the thermoplastic resin used for the outer resin portion 23, it is desirable to select a thermoplastic resin having particularly excellent heat resistance, weather resistance and mechanical strength. As the type of thermoplastic resin, polyamide, polyphthalamide, polyphenylene sulfide, liquid crystal polymer, polyether sulfone, silicone, epoxy, polyetherimide, polybutylene terephthalate and the like can be used. Furthermore, by adding any one of titanium dioxide, zirconium dioxide, potassium titanate, aluminum nitride and boron nitride as a light reflector into these resins, the bottom surface and the side surface of the recess 23c can be seen from the light emitting device. It is possible to increase the light reflectance and increase the light extraction efficiency of the entire semiconductor device 20.

For the sealing resin portion 24, in order to improve the light extraction efficiency, it is desirable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the semiconductor device 20. Therefore, it is possible to select an epoxy resin or a silicone resin as a resin that satisfies the properties of high heat resistance, weather resistance, and mechanical strength. In particular, when a high-brightness LED is used as the LED element 21, the sealing resin portion 24 is exposed to strong light, so that the sealing resin portion 24 is preferably made of a silicone resin having high weather resistance.

<u style="single">Lead frame manufacturing method</u> Next, the manufacturing method of the lead frame 10 shown in FIG. 1 will be described with reference to FIGS. 4 (a)-(d) and 5 (a)-(c). 4 (a)-(d) are cross-sectional views showing a lead frame manufacturing method according to the present embodiment, and FIGS. 5 (a)-(c) are cross-sectional views showing the lead frame manufacturing method according to the present embodiment. Among them, it is a figure which shows the etching process.

First, as shown in FIG. 4A, a flat metal substrate 31 is prepared. As the metal substrate 31, a metal substrate made of copper, a copper alloy, a 42 alloy (Ni 41% Fe alloy) or the like can be used as described above. It is preferable to use the metal substrate 31 which has been cleaned by degreasing or the like on both sides thereof.

Next, a photosensitive resist is applied to the front and back surfaces of the metal substrate 31, dried, exposed through a desired photomask, and then developed to form etching resist layers 32 and 33 (FIG. 4 (b)). ). As the photosensitive resist, conventionally known ones can be used.

Next, the metal substrate 31 is etched with a corrosion solution using the etching resist layers 32 and 33 as corrosion resistant films (FIG. 4 (c)). The corrosive liquid can be appropriately selected depending on the material of the metal substrate 31 to be used. For example, when copper is used as the metal substrate 31, an aqueous ferric chloride solution is usually used, which can be performed by spray etching from both sides of the metal substrate 31.

During this etching process, as shown by the arrows in FIGS. 5 (a)-(b), the corrosive liquid enters through the openings 32a and 33a of the etching resist layers 32 and 33 and enters from the surface of the metal substrate 31 to the inside. The metal substrate 31 is corroded toward.

After that, as shown in FIG. 5 (c), the metal substrate 31 penetrates in the thickness direction to form a space 13 by the corrosive liquid, and at the same time, the die pad 11 and the lead portion 12 are formed through the space 13. .. In this case, the facing surface 14 of the die pad 11 becomes uneven due to the formation of the protrusions 16a and 16b. Similarly, the facing surface 15 of the lead portion 12 becomes uneven due to the formation of protrusions 17a and 17b.

Next, as shown in FIG. 4D, the etching resist layers 32 and 33 are peeled off and removed. In this way, a lead frame 10 (see FIG. 1) including the die pad 11 and the lead portion 12 provided around the die pad 11 via the space 13 is obtained.

<u style="single">Manufacturing method of lead frame with resin</u> Next, the manufacturing method of the lead frame 30 with resin shown in FIG. 2 will be described with reference to FIGS. 6 (a)-(d). 6 (a)-(d) are cross-sectional views showing a method of manufacturing a lead frame with resin according to the present embodiment.

First, plating resist layers 34 and 35 having desired patterns are provided on the front surface and the back surface of the lead frame 10 described above (FIG. 6 (a)). Of these, in the resist layer 34 for plating on the surface side, an opening 34a is formed at a portion corresponding to the formation site of the plating layer 25, and the mounting surface 11a of the die pad 11 and the lead portion 12 are bonded from this opening 34a. Surface 12a is exposed. On the other hand, the plating resist layer 35 on the back surface side covers the entire back surface of the lead frame 10.

Next, electrolytic plating is applied to the surface side of the lead frame 10 covered with the resist layers 34 and 35 for plating. As a result, a metal (for example, silver) is deposited on the lead frame 10 in the opening 34a to form the plating layer 25 (FIG. 6 (b)).

Next, the lead frame 10 on which the plating layer 25 is formed is obtained by peeling off the resist layers 34 and 35 for plating (FIG. 6 (c)).

Next, the outer resin portion 23 is formed by injection molding or transfer molding the thermoplastic resin on the lead frame 10. As a result, the outer resin portion 23 and the lead frame 10 are integrally coupled.

In this case, the outer resin portion 23 includes a buried resin portion 23a filled in the space 13 between the die pad 11 and the lead portion 12, and a protruding resin portion 23b projecting above the lead frame 10. At this time, by appropriately designing the mold used for injection molding or transfer molding, a recess 23c is formed in the outer resin portion 23, and the plating layer 25 is exposed to the outside on the bottom surface of the recess 23c. ..

In this way, a lead frame 30 with resin (see FIG. 2) is obtained, which includes the lead frame 10 and an outer resin portion 23 that fills the space 13 between the die pad 11 and the lead portion 12 of the lead frame 10 (see FIG. 2). Figure 6 (d)).

In the present embodiment, after the lead frame 10 having a predetermined shape is produced by etching the metal substrate 31 (FIGS. 4 (a)-(d)), the plating layer 25 is formed on the lead frame 10. (Fig. 6 (a)-(c)). However, the present invention is not limited to this, and the lead frame 10 may be produced by first forming a plating layer 25 on the metal substrate 31 and then processing the metal substrate 31 into a predetermined shape by etching.

<u style="single">Manufacturing method of semiconductor devices</u> Next, the manufacturing method of the semiconductor device 20 shown in FIG. 3 will be described with reference to FIGS. 7 (a)-(c). 7 (a)-(c) are cross-sectional views showing a method of manufacturing a semiconductor device according to the present embodiment.

First, a resin provided with a lead frame 10 and an outer resin portion 23 that fills a space 13 between the die pad 11 and the lead portion 12 of the lead frame 10 by the above-mentioned steps (FIGS. 6 (a)-(d)). The lead frame 30 with attachment is manufactured.

Next, the LED element 21 is mounted on the mounting surface 11a of the die pad 11 of the lead frame 10. In this case, the LED element 21 is placed and fixed on the mounting surface 11a of the die pad 11 by using solder or die bonding paste (diaattachment step) (FIG. 7 (a)).

Next, the terminal portion 21a of the LED element 21 and the bonding surface 12a of the lead portion 12 are electrically connected to each other by a bonding wire 22 (wire bonding step) (FIG. 7 (b)).

After that, the sealing resin portion 24 is filled in the recess 23c of the outer resin portion 23, and the LED element 21 and the bonding wire 22 are sealed by the sealing resin portion 24. In this way, the semiconductor device 20 shown in FIG. 3 can be obtained (FIG. 7 (e)). In this case, each semiconductor device 20 may be manufactured by mounting a plurality of LED elements 21 on the lead frame 10 in advance and dicing the outer resin portions 23 between the LED elements 21 respectively.

<u style="single">Action effect of this embodiment</u> Next, the action and effect according to the present embodiment will be described.

In the semiconductor device 20 according to the present embodiment, as described above, the facing surface 14 of the die pad 11 and the facing surface 15 of the lead portion 12 are each formed in an uneven shape. As a result, in the space 13 between the die pad 11 and the lead portion 12, the contact area between the outer resin portion 23 (embedded resin portion 23a) and the lead frame 10 can be increased. Therefore, the adhesion between the outer resin portion 23 and the lead frame 10 can be improved, and the outer resin portion 23 can be prevented from falling out of the space 13.

Further, since the anchor effect can be obtained by the unevenness (projections 16a, 16b, 17a, 17b) formed on the facing surface 14 of the die pad 11 and the facing surface 15 of the lead portion 12, the strength of the semiconductor device 20 against stress can be improved. Can be done. Therefore, even when stress is applied to the semiconductor device 20, it is possible to prevent the outer resin portion 23 from falling out of the space 13.

For example, when the thermal cycle test of the semiconductor device 20 is carried out, between the metal (for example, copper) constituting the lead frame 10 and the synthetic resin (for example, silicone resin) constituting the outer resin portion 23 (embedded resin portion 23a). However, even in this case, there is no possibility that the outer resin portion 23 will be peeled off from the lead frame 10.

By preventing the outer resin portion 23 from falling off in this way, the thickness of the lead frame 10 can be reduced, and as a result, the thickness of the semiconductor device 20 can be reduced. Specifically, the thickness of the semiconductor device 20 can be set to 0.2 mm to 0.8 mm.

(Second embodiment) Next, the lead frame, the lead frame with resin, and the semiconductor device according to the second embodiment of the present invention will be described with reference to FIGS. 8 to 9. In FIGS. 8 to 9, the same parts as those of the embodiments shown in FIGS. 1 to 7 are designated by the same reference numerals, and detailed description thereof will be omitted.

FIG. 8 is a cross-sectional view showing a lead frame, a lead frame with resin, and a semiconductor device (SON type) according to the present embodiment. The embodiment shown in FIG. 8 is different from the facing surface 15 of the lead portion 12 of the lead frame 10 in that a protrusion 17c is formed on the back surface side of the lead portion 12, and the other configurations are described above. It is substantially the same as the embodiment shown in FIGS. 1 to 7.

That is, in the semiconductor device 40 shown in FIG. 8, protrusions 17a and 17c are formed on the facing surface 15 of the lead portion 12 of the lead frame 10 at the upper end (front surface side) and the lower end (back surface side), respectively. As a result, the facing surface 15 of the lead portion 12 is formed in an uneven shape. The protrusions 17a and 17c project toward the inside of the space 13, respectively. Further, the facing surface 14 of the die pad 11 is also formed in an uneven shape by the protrusions 16a and 16b. Therefore, as in the embodiment shown in FIGS. 1 to 7, it is possible to prevent the outer resin portion 23 from falling out of the space 13.

9 (a)-(d) are views showing a process of manufacturing the lead frame 10 shown in FIG. 8 by etching the metal substrate 31. Of FIGS. 9 (a)-(d), the steps shown in FIGS. 9 (a)-(c) are substantially the same as the steps shown in FIGS. 5 (a)-(c) described above.

In the present embodiment, in addition to the steps shown in FIGS. 5 (a)-(c) described above (FIGS. 9 (a)-(c)), etching is performed for a longer time. In this case, the corrosive liquid corrodes the inside of the metal substrate 31 centering on the substantially central portion of the lead portion 12 in the thickness direction of the facing surface 15 of the lead portion 12 (FIG. 9 (d)).

As a result, the facing surface 15 of the lead portion 12 has a shape in which the substantially central portion thereof is curved inward. Further, since the progress of corrosion by the corrosive liquid is relatively delayed at the upper end (front surface side) and the lower end (back surface side) of the facing surface 15, protrusions 17a and 17c are formed at these portions, respectively.

In addition, the method for manufacturing the lead frame, the method for manufacturing the lead frame with resin, and the method for manufacturing the semiconductor device according to the present embodiment are shown in FIGS. 4 (a)-(d) and 6 (a)-(d, respectively. ), And the method described with reference to FIGS. 7 (a)-(c) is the same, and detailed description thereof will be omitted here.

(Third embodiment) Next, the lead frame, the lead frame with resin, and the semiconductor device according to the third embodiment of the present invention will be described with reference to FIG. In FIG. 10, the same parts as those of the embodiments shown in FIGS. 1 to 7 are designated by the same reference numerals, and detailed description thereof will be omitted.

FIG. 10 is a cross-sectional view showing a lead frame, a lead frame with resin, and a semiconductor device (SON type) according to the present embodiment. The embodiment shown in FIG. 10 is different in that two lead portions 12 are provided around the die pad 11 of the lead frame 10, and the other configurations are shown in FIGS. 1 to 7 described above. It is almost the same as the form of.

That is, in the semiconductor device 50 shown in FIG. 10, a pair of lead portions 12 are provided around the die pad 11 of the lead frame 10 at positions facing each other with the die pad 11 interposed therebetween. Protrusions 17a and 17b protruding into the space 13 are formed on the facing surfaces 15 of the lead portions 12, so that the facing surfaces 15 are formed in an uneven shape.

In FIG. 10, the LED element 21 has a pair of terminal portions 21a, and the pair of terminal portions 21a are connected to the corresponding lead portions 12 via bonding wires 22 respectively.

The method for manufacturing the lead frame, the method for manufacturing the lead frame with resin, and the method for manufacturing the semiconductor device according to the present embodiment are shown in FIGS. 4 (a)-(d), 5 (a)-(c), and FIG. Since it is substantially the same as the method described with reference to 6 (a)-(d) and FIG. 7 (a)-(c), detailed description thereof will be omitted here.

In the present embodiment, the semiconductor device 50 has one die pad 11 and two lead portions 12. However, the present invention is not limited to this, and the semiconductor device may have two or more die pads 11 and / or three or more lead portions 12.

10 lead frame 11 Die pad 12 Reed part 13 space 14 Opposing surface 15 Facing surface 16a, 16b, 17a, 17b, 17c protrusions 20 Semiconductor devices 21 LED element 22 Bonding wire (conductive part) 23 Outer resin part 24 Sealing resin part 25 Plating layer 30 Lead frame with resin 40 Semiconductor devices