Light-emitting device and illumination apparatus

The present invention relates to a light emitting device using a light emitting diode chip and a lighting device using the light emitting device.

In recent years, LEDs (light emitting diodes) have come to be widely used as a light source for lighting devices. As a method of obtaining white light of a lighting device using LEDs, a method of using three types of LEDs, a red LED, a blue LED, and a green LED, and a phosphor that converts the excitation light emitted from the blue LED and emits yellow light are used. There are methods and so on.

Since white light having sufficient brightness is required as a light source for lighting, a lighting device using a plurality of LED chips has been commercialized.

FIG. 20 shows a conventional example in which the light from the lower surface of the LED chip is effectively utilized (see Patent Document 1). A reflective frame consisting of a spherical portion 200a and a conical portion 200b extending above the spherical portion 200a is formed on the bottom surface at substantially the center of the circuit board 500, and is formed on the inner surface of the reflective frame by vapor deposition of silver, aluminum, etc. A metal reflective film 600 is formed. The transparent resin 400 is injected into the spherical surface portion 200a, the LED chip 200 is mounted on the upper surface of the transparent resin 400, and the LED chip 200 is sealed with the translucent resin 420 so as to cover the LED chip 200. The light from the lower surface of the LED chip is reflected and condensed by the spherical surface portion 200a and emitted toward the upper surface of the LED chip, so that the brightness is increased without loss of light. Further, by changing the shape of the spherical surface portion, light distribution characteristics suitable for the set can be obtained.

Further, another conventional example is shown in FIG. 21 (see Patent Document 2). An object of the present invention is to provide a highly productive surface mount type LED component capable of efficiently dissipating heat generated by an LED chip and a method for manufacturing the same. In this conventional example, a heat dissipation plate 100 made of metal or ceramic on which the LED chip 200 is mounted is joined, and the LED chip and the wiring board 500 having the wiring pattern 300 are electrically connected by a wire W, and the transparent resin 400. The LED chip and wire are embedded in the structure.<patcit num="1"><text>Japanese Patent Application Laid-Open No. 2005-056941</text></patcit><patcit num="2"><text>Japanese Unexamined Patent Publication No. 2006-287020</text></patcit>

<p> The conventional example shown in FIG. 20 is an LED chip package that reflects light from an LED chip with a spherical metal reflective film. This spherical reflection structure has a problem that the manufacturing process is complicated. Further, for example, as a light emitting device used in a lighting device, it is necessary to provide a plurality of light emitting elements on a substrate because sufficient brightness and uniform light emission that is not bright spot-like light emission are required. In that case, the reflection structure as shown in the conventional example cannot be applied, and a new reflection structure is required. Further, in the conventional example, since the LED chip is provided on the transparent resin, the heat from the LED chip is not sufficiently dissipated, and when the LED chip is mounted, the poor heat dissipation is remarkable. ..</p><p> Further, in the light emitting device shown in FIG. 21, the LED chip 200 and the wiring board 500 having the wiring pattern 300 are electrically connected by the wire W, and the LED chip and the wire are embedded by the transparent resin 400. However, this structure has a problem that light leaks to the substrate and is not effectively utilized. Further, the method of applying the transparent resin 400 is not described in detail, and the wiring pattern 300 is formed on a part of the side surface and the back surface of the wiring board 500, which makes the manufacturing method difficult and is an inexpensive light emitting device. Is difficult to provide.</p><p> The present invention has been made in view of the above reasons, and an object of the present invention is to provide a light emitting device capable of effectively utilizing the light leaking below the light emitting element and dissipating heat from the light emitting element. Is.</p>

<p> The present invention provides a substrate, a light emitting element provided on the substrate, a sealing resin containing a phosphor that covers the light emitting element and is excited by the light emitting element, and a surface of the substrate opposite to the surface provided with the light emitting element. It is a light emitting device characterized by having a first reflective layer.</p><p> With this configuration, the light leaked to the substrate side is reflected upward by the reflective layer, the phosphor is excited by the phosphor layer, and the light from the light emitting element leaks from the substrate side to which the light emitting element is attached. Can be used effectively. In particular, even when the phosphor is settled in the vicinity of the substrate surface, the phosphor can be effectively excited to increase the emission intensity. Further, since the light emitting element is provided on the substrate, the heat dissipation of the light emitting element is also improved.</p><p> Further, in the light emitting device of the present invention, it is preferable that the first reflective layer is provided in a recess provided on a surface opposite to the surface of the substrate on which the light emitting element is provided.</p><p> With this configuration, the reflective layer fits in the recess, and it is possible to avoid mechanical damage (scratches / wear) when attaching the light emitting device.</p><p> The present invention has a substrate, a light emitting element provided on the substrate, a sealing resin containing a phosphor that covers the light emitting element and is excited by the light emitting element, and a first reflective layer provided inside the substrate. It is a light emitting device characterized by.</p><p> With this configuration, it is possible to effectively utilize the light from the light emitting element that leaks from the substrate side on which the light emitting element is attached.</p><p> Further, in the light emitting device of the present invention, it is preferable that the substrate is formed by laminating at least two substrates, and the first reflective layer is sandwiched between the at least two substrates.</p><p> With this configuration, since the reflective layer is inside the ceramic substrate, the substrate is strong, and it is possible to avoid mechanical damage (scratches / wear) when the light emitting device is attached.</p><p> Further, in the light emitting device of the present invention, it is preferable that the light emitting element is provided on the second reflective layer provided on the substrate.</p><p> With this configuration, a plurality of reflective layers are provided, and the light leaking from the substrate side can be effectively utilized with higher accuracy.</p><p> Further, in the light emitting device of the present invention, it is preferable that the first reflecting layer reflects the light transmitted from the light emitting element through the substrate.</p><p> Further, in the light emitting device of the present invention, it is preferable that the first reflective layer has an uneven portion on the side facing the light emitting element. Further, it is preferable that the first reflective layer is arranged so that the convex portion is below the light emitting element.</p><p> With this configuration, the light leaking directly under the light emitting element can be effectively re-entered into the sealing resin layer containing the phosphor above.</p><p> Further, in the light emitting device of the present invention, it is preferable that the first reflective layer is an alloy of Ag-Nd or Mo. In particular, when an alloy such as Ag-Nd is used, aggregation of Ag can be suppressed and a decrease in reflectance can be prevented.</p><p> Further, in the light emitting device of the present invention, the first reflective layer is preferably in the range of 0.01 mm to 1 mm from the surface of the substrate on which the light emitting element is provided. If it is closer than 0.01 mm, it will be difficult to manufacture, and if it is more than 1 mm, there will be a problem that the light leaked to the substrate side cannot be effectively reflected upward. A more preferable range is in the range of 0.01 mm to 0.5 mm.</p><p> Further, in the light emitting device of the present invention, the substrate is preferably a ceramic substrate or an aluminum oxide substrate. Further, the ceramic substrate is preferably made of one of aluminum oxide, aluminum nitride, boron nitride, silicon nitride, magnesium oxide, forsterite, steatite, low temperature sintered ceramic, or a composite material thereof.</p><p> The substrate of the above material has small thermal expansion, good thermal conductivity, and is more excellent in thermal conductivity for applications that require higher heat dissipation and heat resistance, so a large current is supplied as a drive current. it can. Furthermore, the reliability of the LED chip can be improved, and deterioration of the phosphor due to heat from the LED chip can be suppressed. It should be noted that these have some spectral transparency and light leaks from the light emitting element, but as described above, the light leaked to the substrate side is reflected upward by the reflective layer and is effectively used.</p><p> Further, in the light emitting device of the present invention, it is preferable that the shape of the first reflective layer is provided so as to be outside the outer peripheral portion of the wiring pattern provided on the substrate. With this configuration, the light from each LED chip provided between the wiring patterns can uniformly obtain the effect of the reflective layer, and it is possible to avoid the occurrence of color shift.</p><p> Further, in the light emitting device of the present invention, it is more preferable that the wiring pattern provided on the substrate is a transparent conductor film. With this configuration, it is possible to suppress the light loss in the wiring pattern and increase the amount of light taken out.</p><p> In the light emitting device of the present invention, the sealing resin containing the phosphor may further have two layers. With this configuration, it is possible to more accurately control the chromaticity of the light emitted to the outside.</p><p> The present invention is a lighting device using any of the above light emitting devices. When the shape of the light emitting device is rectangular or substantially square, the light emitting elements can be arranged in close contact with each other, which is particularly preferable when the light emitting device is manufactured as a fluorescent lamp type LED lamp.</p>

<p> According to the present invention, it is possible to effectively utilize the light from the light emitting element leaking from the substrate side on which the light emitting element is attached. In addition, the heat from the light emitting element can be diffused through the substrate.</p>

(Embodiment 1) FIG. 1 shows a schematic view of the light emitting device 1000 of the present invention as viewed from above. The light emitting device includes an aluminum oxide (hereinafter referred to as alumina) substrate 1, a light emitting part 1001, a positive electrode external connection land 101, a negative electrode external connection land 91, a screw of a mounting part 13, and an external wiring connected to the external connection land. It is composed of a hole for external wiring through which external wiring passes and a first phosphor-containing sealing resin layer 5.

FIG. 2 shows the reflection layer, the wiring pattern, and the like of the light emitting device of the present embodiment. Alumina substrate 1, Wiring pattern 2 on alumina substrate, Chip mounting part 41, Positive electrode external connection land 101, Negative electrode external connection land 91, Mounting part 13, Bonding wire positioning or chip mounting position guide pattern 42, Alumina substrate back surface It is composed of a reflective layer 44 formed on the surface.

Next, with reference to FIGS. 3A to 3E, a method for manufacturing the light emitting device 1000 is shown below. (a) Alumina substrate 1 Ag-Nd alloy thickness 0.1 mm is formed as a reflective layer 44 on one side with a thickness of 1 mm by a sputtering method. Then, a substantially rectangular pattern is formed by a photoetching method. If the reflective layer 44 has a thickness of about 0.1 mm, the effect as a reflective layer can be further obtained. Further, by using an alloy such as Ag-Nd, aggregation of Ag can be suppressed and a decrease in reflectance can be prevented.

Further, a gold film thickness of 0.07 mm is formed on the upper surface of the alumina substrate 1 having a thickness of 1 mm by using a sputtering method. After that, the wiring pattern shape 2 (width 1 mm, interval 2 mm) is formed by a photo-etching method. Here, the wiring pattern shape 2 is formed at a position that substantially matches the shape of the reflective layer 44, but the reflective layer 44 is formed so as to come out at least from the outermost peripheral shape of the wiring pattern shape 2. It is preferable that By forming in this way, the light from each LED chip provided between the wiring patterns can uniformly obtain the effect of the reflective layer, and it is possible to avoid the occurrence of color shift. (b) Fix the LED chip 3 (short side width 0.24 mm, long side 0.48 mm, thickness 0.14 mm) on the alumina substrate using epoxy resin. The LED chip 3 and the wiring pattern 2 are electrically connected using the bonding wire W. (c) A substantially rectangular silicone rubber sheet 4 is brought into close contact with the alumina substrate 1. (d) Next, a sealing resin containing a phosphor is injected into the silicone rubber sheet 4, and the sealing resin containing the phosphor is thermoset to form the first phosphor-containing sealing resin layer 5. To do.

More specifically, the weight ratio of the following fluorescent substance and silicone resin, which is a translucent resin, is 5: so that light with (x, y) = (0.345, 0.35) can be obtained in the CIE chromaticity table. After injecting the mixture so as to be 100 into the silicone rubber sheet 4, it is cured at a temperature of 150 ° C. for 60 minutes to form the first phosphor-containing sealing resin layer 5. The chromaticity range is set to emit yellow light in the region (b) of FIG. 4, for example. Further, the chromaticity range is an example of a preferable range in the present embodiment, and is not limited to this, and is appropriately changed according to the luminosity of the light to be extracted. The same applies to the following embodiments. (e) After that, the silicone rubber sheet 4 is removed to form the light emitting portion 1001.

FIG. 19 shows a schematic view of the silicone rubber sheet 4. It consists of a region 45 into which a translucent resin containing a phosphor is injected. Therefore, the silicone rubber sheet 4 has a function like a dam (prevents resin leakage) when the translucent resin containing a phosphor is applied. Therefore, the silicone rubber sheet 4 has a feature that can be called a dam sheet. Moreover, the dam sheet can be used many times. Further, by changing the shape of the dam sheet, the shape of the light emitting portion (shape of the phosphor layer) can be easily changed in various ways.

Next, the effect of the present invention applied to a light emitting device using a phosphor will be described. 23 (a) and 23 (b) are schematic views in which the cross-sectional view of the first embodiment is partially emphasized. As shown in FIG. 23 (a), in the present embodiment, the light from the LED chip is reflected directly or by the reflective layer and collides with the phosphor, which excites the phosphor to emit yellow light. That is, the light leaking to the substrate by this reflective layer is reflected by the reflective layer and passes through the phosphor-containing sealing resin layer, so that the light is more efficiently converted into yellow light by the phosphor, and thus the color rendering property. It becomes a high light emitting device.

Further, the phosphor may settle in the sealing resin (Fig. 23 (b)), but since the present invention reflects light from the substrate side, even in that case, it cannot be excited without the reflective layer. It is possible to excite even a phosphor.

Therefore, in the light emitting device using a phosphor as in the present embodiment, since the light is effectively utilized to excite the phosphor, for example, as a light emitting device for a lighting device in which a strong yellow light bulb color is desired. Suitable. Although FIG. 23 shows an embodiment in which the reflective layer is provided on the back surface of the substrate, the same effect can be obtained in the embodiment described later in which the reflective layer is provided inside the substrate.

In addition, when the substrate is etched and a reflective layer is provided in the recess, the reflective layer fits in the recess, and it is possible to avoid mechanical damage (scratches, wear) when attaching the light emitting device. is there.

In addition, by making the wiring pattern shape 2 parallel and providing an LED chip loading area between the wiring patterns, it is possible to freely determine the mounting pitch of the LED chips in the direction parallel to the wiring pattern, and the brightness of the light emitting device can be adjusted. You can easily adjust the chromaticity and take measures to dissipate heat.

In the present embodiment, the outer shape of the light emitting device 1000 is substantially square, and the shape of the light emitting unit 1001 is substantially rectangular, but it may be circular, elliptical, or the like.

Further, as a specific material for forming the phosphor layer, a transparent resin having excellent weather resistance such as epoxy resin, urea resin, and silicone resin, and a translucent inorganic material such as silica sol and glass having excellent light resistance are preferable. Used for. Further, a diffusing agent may be contained together with the phosphor. As a specific diffusing agent, barium titanate, titanium oxide, aluminum oxide, silicon oxide, calcium carbonate, silicon dioxide and the like are preferably used.

As an application example of the lighting equipment manufactured by using the light emitting device 1000, FIG. 16 shows a schematic diagram of a fluorescent lamp type LED lamp 8000, and FIG. 18 shows a schematic diagram of a light bulb type LED lamp 8002.

As described above, as the LED chip, a blue LED chip in which a gallium nitride-based light emitting portion is formed on a sapphire substrate is used. However, the blue LED chip made of a gallium nitride compound semiconductor is not limited to the blue LED chip made of a gallium nitride based compound semiconductor, and a blue LED chip made of a ZnO (zinc oxide) compound semiconductor may be used on the GaN substrate. Needless to say, an LED chip of an InGaAlP-based or AlGaAs-based compound semiconductor may be used.

As the phosphor, a Ce: YAG (cerium-activated yttrium aluminum garnet) phosphor, an Eu: BOSE or SOSE (europium-activated strontium garnet) phosphor, a europium-activated α-sialone phosphor, or the like can be preferably used.

When forming the resin encapsulant, the encapsulant resin for molding may be dropped. Further, the resin encapsulant may be formed by using a mold, and as the shape of the resin encapsulant, the resin encapsulant is formed into, for example, a hemispherical shape that is convex upward. It is also possible to give the function as a lens.

Further, the LED chip can be adhered with a thermosetting resin or the like. Specific examples thereof include epoxy resin, acrylic resin and imide resin.

A P-side electrode and an N-side electrode were formed on one surface of the LED chip, and two wire bonding was performed with the surface as the upper surface. Further, although the LED chip shows blue light emission, the light emission color is not limited to this, and for example, one that emits ultraviolet light or one that emits green light may be used. In addition, the method of converting the light emitted from the LED chip with a phosphor to obtain white color was shown, but for example, using LED chips of three colors of red, green, and blue without using a phosphor, white, light bulb color, etc. You may obtain the color required for lighting.

The substrate may be a ceramic substrate other than alumina. Both substrates have small thermal expansion, good thermal conductivity, and are more excellent in thermal conductivity for applications that require higher heat dissipation and heat resistance, so that a large current can be supplied as a drive current. Furthermore, the reliability of the LED chip can be improved, and deterioration of the phosphor due to heat from the LED chip can be suppressed.

In particular, since the ceramic substrate has high insulating properties, it is not necessary to form an insulating layer on the substrate, which facilitates production. Further, it is not necessary to secure a creepage distance between the side surface of the wiring pattern and the side surface of the LED chip.

Furthermore, the wiring pattern can be formed directly on the ceramic substrate, and no solder resist is required. The problem of discoloration of the solder resist that occurs when the wiring is thermally connected with solder or the like is eliminated. Further, the problem of discoloration of the solder resist due to heat generation of the light emitting element is eliminated.

In any case, the substrate suitable for mounting the LED chip causes light to leak from the mounted LED chip to the substrate.

Hereinafter, another embodiment in which a part of the light emitting device of the first embodiment is modified will be described. The description of the common parts with the first embodiment will be omitted, and the characteristic parts of each embodiment will be described.

(Embodiment 2) The light emitting device of the second embodiment is shown in FIG. In this embodiment, a reflective layer is provided inside the substrate.

FIG. 5 is a schematic view seen from a cross section of the light emitting unit 1002. A Mo (molybdenum) thickness of 0.1 mm is formed as the reflective layer 44 in the ceramic substrate 1. Specifically, for example, the reflective layer 44 is sandwiched between two ceramic plates. The reflective layer 44 is formed by using, for example, the sputtering method and the photoetching method as in the first embodiment.

By providing the reflective layer inside the substrate, the reflective layer can be formed at a position where the light leaked to the substrate can be effectively reflected, and the thickness of the entire substrate is increased to further enhance the mechanical strength and the heat dissipation effect. There is. Further, since the coefficient of thermal expansion of Mo is almost the same as that of the substrate, it is possible to prevent damage caused by the difference in the coefficient of thermal expansion between the substrate and the reflective layer, and it is possible to secure the reliability of the light emitting device. ..

Next, the wiring pattern 2 is formed. As described in the first embodiment, it is preferable that the reflective layer 44 is formed so as to protrude from at least the outermost peripheral shape of the wiring pattern shape 2. Next, the LED chip is bonded to the ceramic substrate using an epoxy resin, and the LED chip 3 and the wiring pattern 2 are electrically connected using the bonding wire W. A sealing resin 5 containing a phosphor is formed so as to cover the LED chip 3, the wiring pattern 2, and the bonding wire W.

Therefore, the light emitting unit 1002 is manufactured. The light emitting device of the present embodiment can effectively utilize the light leaking from the substrate side as in the first embodiment. Further, since the reflective layer is inside the ceramic substrate, the substrate is strong, and it is possible to avoid mechanical damage (scratches / wear) when the light emitting device is attached.

(Embodiment 3) The light emitting device of the third embodiment is shown in FIG.

FIG. 6 is a schematic view seen from a cross section of the light emitting unit 1003. A silver layer thickness of 0.02 mm is formed as the second reflective layer 44 in the ceramic substrate 1. Next, the wiring pattern 2, the LED chip mounting portion, and the silver layer thickness of 0.05 mm as the first reflective layer 43 are formed.

Here, the reflective layer 44 is formed so as to protrude from at least the outermost peripheral shape of the wiring pattern shape 2. Next, the LED chip 3 is joined to the LED chip mounting portion and the first reflective layer 43 using a silicone resin. Next, the LED chip 3 and the wiring pattern 2 are electrically connected using the bonding wire W. A sealing resin 5 containing a phosphor is formed so as to cover the LED chip 3, the wiring pattern 2, and the bonding wire W.

Therefore, the light emitting unit 1003 is manufactured. The light emitting device of the present embodiment has a plurality of reflective layers, and can effectively utilize the light leaking from the substrate side with higher accuracy than the first and second embodiments. Further, when a eutectic chip can be used for the first reflection layer and the phosphor emits yellow light, a light emitting device having a light bulb color having a stronger yellow light can be manufactured.

(Embodiment 4) Next, the light emitting device of the fourth embodiment is shown in FIG.

FIG. 7 is a schematic view seen from a cross section of the light emitting unit 1004. A silver film thickness of 0.1 mm is formed as the reflective layer 44 in the ceramic substrate 1. Next, the wiring pattern 21 is formed on the ceramic substrate 1. Here, the wiring pattern 21 is formed so as to be within the shape of the reflective layer 44.

Next, the LED chip 3 is bonded to the ceramic substrate 1 using an epoxy resin. Next, the LED chip 3 and the wiring pattern 2 are electrically connected using the bonding wire W. A sealing resin 5 containing a phosphor is formed so as to cover the bonding wire W with the LED chip 3 and the wiring pattern 21. Here, a transparent conductor film was used as the wiring pattern 21. By using the transparent conductor film, it is possible to suppress the light loss in the wiring pattern 21 and increase the amount of light taken out. In this embodiment, ITO is specifically used as the transparent conductor film, but In₂O₃(Indium oxide), SnO₂(Tin Oxide), ZnO (Zinc Oxide), Sn (Tin) Dope In₂O₃, Sb (antimony) dope SnO₂Etc. can also be applied. The thickness of the wiring pattern was 0.010 mm and the width was 0.7 mm.

(Embodiment 5) Next, the light emitting device of the fifth embodiment is shown in FIG.

FIG. 8 is a schematic view seen from a cross section of the light emitting unit 1005. A Mo (molybdenum) thickness of 0.07 mm is formed as the reflective layer 44 in the ceramic substrate 1.

The reflective layer 44 in the present embodiment is formed in an uneven shape, and the LED chip is mounted so that the convex portion is located substantially below the LED chip. By using the reflective layer 44 having such an uneven shape, the light radiated to the ceramic substrate 1 is diffused at an angle by the convex portion of the reflective layer substantially below the LED chip, and the light returns to the lower surface of the LED chip. Can be prevented. Therefore, it is possible to suppress the light loss on the lower surface of the LED chip. Further, as the pattern of the unevenness of the reflective layer 44, the convex portion may be below the LED chip, and may be striped or dot-shaped. Further, even when the convex portion is not below the LED chip, the effect of light diffusion can be obtained.

Next, the wiring pattern 2 is formed on the ceramic substrate 1. Here, the wiring pattern 2 is formed so as to be within the shape of the reflective layer 44. Next, the LED chip 3 is bonded to the ceramic substrate 1 using an epoxy resin. Next, the LED chip 3 and the wiring pattern 2 are electrically connected using the bonding wire W. A sealing resin 5 containing a phosphor is formed so as to cover the LED chip 3, the wiring pattern 2, and the bonding wire W.

(Embodiment 6) Next, the light emitting device of the sixth embodiment will be described.

In this embodiment, the chromaticity of the light emitted to the outside can be controlled more accurately by forming the phosphor-containing sealing resin layer into two layers.

FIG. 9 shows a schematic view of the light emitting device 2000 of the present invention as viewed from above. The light emitting device includes an aluminum oxide (hereinafter referred to as alumina) substrate 1, a light emitting part 2001, a positive electrode external connection land 101, a negative electrode external connection land 91, a screw of a mounting part 13, and an external wiring connected to the external connection land. Consists of a hole for external wiring through which external wiring passes, a first phosphor-containing sealing resin layer 5, and a second phosphor-containing sealing resin layer 51 coated on the first phosphor-containing sealing resin layer 5. Has been done.

FIG. 10 shows the wiring pattern of the light emitting device of the present embodiment, the upper surface reflective layer, and the like. Alumina substrate 1, wiring pattern 2 on alumina substrate, first reflective layer 43 and chip mounting part 41, positive electrode external connection land 101, negative electrode external connection land 91, mounting part 13, bonding wire positioning or chip mounting position guide It is composed of a pattern 42 and a second reflective layer 44.

The manufacturing method of the light emitting device 2000 is shown below in FIGS. 22 (a) to 22 (e). (a) Alumina substrate 1 Prepare an alumina substrate 1 having an Ag thickness of 0.1 mm formed as a second reflective layer 44 within a thickness of 1 mm. Here, the second reflective layer 44 has a substantially rectangular pattern.

A gold film thickness of 0.07 mm is formed as a wiring pattern on the surface of the alumina substrate 1 by using a sputtering method. After that, the wiring pattern shape 2 (width 1 mm, interval 2 mm) is formed by a photo-etching method. Here, the wiring pattern shape 2 is formed at a position that substantially matches the shape of the second reflective layer 44. Next, a silver foil film of 0.01 mm, a length of 9 mm, and a width of 0.5 mm is formed on the surface of the alumina substrate 1 as the first reflective layer 43 and the chip mounting portion 41 by a silver plating method. (b) The LED chip 3 (short side width 0.24 mm, long side 0.48 mm, thickness 0.14 mm) is fixed on the first reflective layer 43 and the chip mounting portion 41 using epoxy resin. The LED chip 3 and the wiring pattern 2 are electrically connected using the bonding wire W. (c) A substantially rectangular silicone rubber sheet 4 is brought into close contact with the alumina substrate 1. (d) Next, the sealing resin 5 containing the first phosphor is injected into the silicone rubber sheet 4, and the sealing resin containing the phosphor is thermoset.

More specifically, the weight ratio of the following fluorescent substance and silicone resin, which is a translucent resin, is 5 so that light with (x, y) = (0.325, 0.335) can be obtained in the CIE chromaticity table. After injecting the mixture so as to be: 100 into the silicone rubber sheet 4, it is cured at a temperature of 150 ° C. for 30 minutes to form a sealing resin body 5 containing a phosphor. It is formed so that the chromaticity range falls within the region (a) of FIG.

Next, the chromaticity characteristic of the light emitting device 2000 is measured. If the chromaticity range is not within the region (b) of FIG. 4, x, y = (0.345, 0.35) in the CIE chromaticity table on the translucent resin 5 containing the first phosphor. A mixture of the following fluorescent substance and silicone resin, which is a translucent resin, so as to obtain light so as to have a weight ratio of 2: 100 is injected into the silicone rubber sheet, and then the temperature is 150 ° C. To form a sealing resin body 51 containing a phosphor by curing with.

The chromaticity characteristics of the light emitting device 2000 are measured again. When the chromaticity range is within the region (b) of FIG. 4, the light emitting unit 2001 is manufactured. (e) After that, the silicone rubber sheet 4 is removed to form the light emitting portion 2001.

In the present embodiment, there are two phosphor encapsulating resin layers, a first phosphor-containing encapsulating resin layer 5 and a second phosphor-containing encapsulating resin layer 51, and as described above, each of them is predetermined. The light emitting device is formed by controlling it so as to fall within the chromaticity range of. Therefore, it is possible to control the chromaticity of the light emitted to the outside more accurately.

In addition, a eutectic chip can be used as the first reflective layer, and it is also possible to manufacture a light emitting device having a light bulb color with a stronger yellow light.

Although the outer shape of the light emitting device 2000 is substantially square and the shape of the light emitting portion 2001 is substantially rectangular, the present invention can be applied even if it is circular, elliptical, or the like.

Next, another embodiment of the sixth embodiment is shown in FIG. FIG. 11 shows the wiring pattern of the light emitting device, the reflective layer on the upper surface, and the like. Alumina substrate 1, wiring pattern 2 on alumina substrate, first reflective layer 43 and chip mounting part 41, positive electrode external connection land 101, negative electrode external connection land 91, mounting part 13, bonding wire positioning or chip mounting position guide It is composed of a pattern 42 and a second reflective layer 44.

The method for manufacturing the light emitting device (mounting the LED chip, forming the phosphor-containing sealing resin, etc.) is the same as that in the sixth embodiment, except that the shapes of the first reflective layer 43 and the chip mounting portion 41 are different. The shape of the first reflective layer 43 and the chip mounting portion 41 was substantially round, with a diameter of 0.6 mm, a pitch of 0.738 mm, and a distance from the wiring pattern of approximately 1 mm in the center.

The light emitting device manufactured here is 3000. Here, the second reflective layer 44 is formed in the alumina substrate 1.

Next, another embodiment of the sixth embodiment is shown in FIG. FIG. 12 is a schematic view of another form of the light emitting device 4000 as viewed from above. The light emitting device is composed of an alumina substrate 1, a light emitting portion 4001, a positive electrode external connection land 101, a negative electrode external connection land 91, a mounting portion 13, and a first phosphor-containing sealing resin layer 5.

Here, the outer shape of the light emitting device 4000 is made substantially square. The shape of the light emitting unit 4001 is almost circular.

FIG. 13 shows a schematic view of another form of the light emitting device 5000 as viewed from above. The light emitting device includes an alumina substrate 1, a light emitting portion 5001, a positive electrode external connection land 101, a negative electrode external connection land 91, a mounting portion 13, a first phosphor-containing sealing resin layer 5, and a first phosphor-containing sealing resin layer. 5 It is composed of a second phosphor-containing sealing resin layer 51 coated on almost the entire surface. Here, the outer shape of the light emitting device 5000 is circular, and the light emitting portion 5001 has a hexagonal shape.

Here, the first reflective layer 43 and the chip mounting portion 41 are formed on the ceramic substrate 1. The diameter was 0.5 mm and the pitch was 0.75 mm. The second reflective layer 44 has a hexagonal shape that is almost the same as that of the light emitting unit 5001.

FIG. 14 shows a schematic view of another form of the light emitting device 6000 as viewed from above. The light emitting device is composed of a ceramic substrate 1, a light emitting portion 6001, a positive electrode external connection land 101, a negative electrode external connection land 91, a mounting portion 13, and a first phosphor-containing sealing resin layer 5. Here, the outer shape of the light emitting device 6000 is circular, and the light emitting portion 6001 is also circular. Further, the reflective layer 44 has a circular shape substantially the same as that of the light emitting unit 6001.

FIG. 15 shows a schematic view of another form of the light emitting device 7000 as viewed from above. The light emitting device includes a ceramic substrate 1, a light emitting portion 7001, a positive electrode external connection land 101, a negative electrode external connection land 91, a mounting portion 13, a first phosphor-containing sealing resin layer 5 formed in a rectangular shape, and the first. It is composed of a second phosphor-containing sealing resin layer 51 partially coated on the phosphor-containing sealing resin layer 5. Here, the outer shape of the light emitting device 7000 is circular, and the light emitting portion 7001 is rectangular. Further, the reflective layer 44 has a rectangular shape substantially the same as that of the light emitting portion 7001.

As described above, the light emitting device of each of the embodiments described in the first to sixth embodiments including another embodiment is applied as the light emitting device of FIG. 16 or 17 by appropriately changing the outer shapes of the light emitting device and the light emitting unit. Lighting equipment, which is an application example, can be manufactured. In addition, a lighting fixture, which is an application example shown in FIG. 18, can also be manufactured.

Further, in each of the light emitting devices shown in the embodiments, a reflection layer is provided on the back surface of the substrate on which the light emitting element is provided (the surface opposite to the surface on which the light emitting element is provided) or the inside of the substrate. Therefore, it is possible to increase the amount of light taken out by reflecting the light leaking to the substrate side. In particular, in a light emitting device used for a lighting fixture, since an LED having a large light output is used, a loss of light leaking to a substrate is a problem, and the present invention can be suitably applied.

Further, as described in the description of the above-described embodiment, the light emitting device of the present invention has an effect of having less color shift, and like the lighting device, backlight illumination of a display device or the like that requires uniform light irradiation. It can be effectively applied even for use.

Further, in the present invention, the LED chip is used as the light emitting element, but the present invention is not limited to this, and can be applied even when another light emitting element is adopted, and is limited to a light emitting device using a plurality of LED chips. However, the above-mentioned effect can be obtained and applied even in a light emitting device equipped with one LED chip.

Moreover, it should be considered that each of the above-described embodiments disclosed this time is an example in all respects and is not restrictive. The technical scope of the present invention is defined by the scope of claims, and is intended to include all modifications within the meaning and scope equivalent to the description of the scope of claims.

<figref num="1">It is a schematic top view which shows the light emitting device of this invention.</figref><figref num="2">It is the schematic of the wiring pattern of the light emitting part and the reflection layer shown in Embodiment 1 of this invention.</figref><figref num="3">It is schematic cross-sectional view of the manufacturing process shown in Embodiment 1 of this invention.</figref><figref num="4">It is a chromaticity table.</figref><figref num="5">It is the schematic sectional drawing which shows the light emitting device of Embodiment 2 of this invention.</figref><figref num="6">It is the schematic sectional drawing which shows the light emitting device of Embodiment 3 of this invention.</figref><figref num="7">It is the schematic sectional drawing which shows the light emitting device of Embodiment 4 of this invention.</figref><figref num="8">It is the schematic sectional drawing which shows the light emitting device of Embodiment 5 of this invention.</figref><figref num="9">It is a schematic top view which shows the light emitting device of Embodiment 6 of this invention.</figref><figref num="10">It is the schematic of the wiring pattern of the light emitting part and the reflection layer shown in Embodiment 6 of this invention.</figref><figref num="11">It is a schematic diagram of the wiring pattern and the reflection layer of the light emitting part of another embodiment of Embodiment 6 of this invention.</figref><figref num="12">It is schematic cross-sectional view which shows the light emitting device of another embodiment of Embodiment 6 of this invention.</figref><figref num="13">It is schematic cross-sectional view which shows the light emitting device of another embodiment of Embodiment 6 of this invention.</figref><figref num="14">It is schematic cross-sectional view which shows the light emitting device of another embodiment of Embodiment 6 of this invention.</figref><figref num="15">It is schematic cross-sectional view which shows the light emitting device of another embodiment of Embodiment 6 of this invention.</figref><figref num="16">It is the schematic of the luminaire using the light emitting device of this invention.</figref><figref num="17">It is the schematic of the luminaire using the light emitting device of this invention.</figref><figref num="18">It is the schematic of the luminaire using the light emitting device of this invention.</figref><figref num="19">It is the schematic of the silicone rubber sheet (dam sheet) used in the manufacturing method of this invention.</figref><figref num="20">It is the schematic sectional drawing of the conventional example.</figref><figref num="21">It is the schematic sectional drawing of the conventional example.</figref><figref num="22">It is sectional drawing of the manufacturing process shown in Embodiment 6 of this invention.</figref><figref num="23">It is a figure for demonstrating the effect of this invention.</figref>

Code description

1 Substrate, 2 Wiring pattern, 3 LED chip, 4 Silicone rubber sheet, W bonding wire, 5 Translucent resin containing the first phosphor, 51 Translucent resin containing the second phosphor, 101 Positive Electrode wiring pattern, 91 Negative electrode wiring pattern, 41 Chip mount, 43 First reflective layer, 44 Reflective layer or second reflective layer, 1000,2000,3000,4000,5000,6000,7000 Light emitting device, 1001,1002, 1003,1004,1005,4001,5001,6001,7001 Light emitting part, 8000,8001 Fluorescent LED lamp, 8002 Light bulb type LED lamp.