Probe unit and its manufacturing method

The present invention relates to a probe unit and a method for manufacturing the probe unit.

A continuity inspection method is known in which a probe is pierced into the electrode surface by applying a large load to ensure that the probe and the sample are electrically connected.

Patent Document 1 discloses a method of pressing a probe protruding from the center of a beam having both ends fixed against an electrode of a sample. However, the beam having both ends fixed is formed by etching silicon, and according to the manufacturing process, the beam is basically linear. Since the rigidity of a beam made of straight silicon with both ends fixed is very high, it is necessary to lengthen the beam in order to obtain an appropriate contact pressure between the electrode of the sample and the probe by overdrive. For example, even if the length of the beam is 500 μm, a load of 68 gf is applied from the probe to the electrode when overdriving by 30 μm. Therefore, the probe unit disclosed in Patent Document 1 cannot support the inspection of a sample in which electrodes are arranged at a fine pitch. In addition, shortening the beam increases the load received by the electrode from the probe, so the probe breaks through the aluminum layer that constitutes the electrode and damages the wiring underneath, or the aluminum pad is deeply scratched to cause wire bond, solder, etc. There is a risk of poor connection. Furthermore, since silicon is brittle, the beam may break if an excessive load is applied to the beam.

Patent Document 2 discloses a method of pressing a probe protruding from an arch-shaped beam having both ends fixed against an electrode of a sample. However, since the probe and the substrate are joined on one surface, the probe is easily peeled off from the substrate.<patcit num="1"><text>Japanese Unexamined Patent Publication No. 2002-71718</text></patcit><patcit num="2"><text>Japanese Unexamined Patent Publication No. 2001-284421</text></patcit>

<p> The present invention has been made in view of the above problems, and provides a probe unit capable of reliably conducting with a sample at an appropriate contact pressure and a probe that does not easily come off from a substrate, and a method for manufacturing the same. The purpose.</p>

<p> The method for manufacturing the probe unit for achieving the above object is a sacrificial substrate forming step of forming a sacrificial substrate having a recess, and a conducting wire for forming a conducting wire that crosses the concave portion along the inner wall of the concave portion on the sacrificial substrate. The forming step, the sacrificial layer forming step of forming a sacrificial layer covering the portion of the conducting wire crossing the recess on the conducting wire, and forming a supporting substrate made of an insulating material on the sacrificial substrate to form the supporting substrate and the said It includes a support substrate forming step of burying the sacrificial layer and the lead wire between the sacrificial substrate and a removing step of removing the sacrificial substrate and the sacrificial layer. Since a lead wire that crosses the recess along the inner wall of the recess is formed on the sacrificial substrate, the portion of the lead wire formed in the recess projects in a direction away from the support substrate. Further, in order to form a support substrate on the sacrificial substrate and bury the lead wire between the support substrate and the sacrifice substrate, the lead wire is embedded in the support substrate. Further, in order to remove the sacrificial layer formed between the portion formed in the recess of the lead wire and the support substrate, a gap is formed between the portion of the conductor formed in the recess and the support substrate. That is, according to the method for manufacturing a probe unit according to the present invention, the probe unit has a lead wire that partially protrudes in the direction away from the support substrate, and has a gap between the portion of the lead wire that protrudes from the support substrate and the support substrate. , It is possible to manufacture a probe unit in which a lead wire is embedded in a support substrate. The probe unit manufactured by the method for manufacturing a probe unit according to the present invention can be made conductive with a sample at a protruding portion of a lead wire. When overdrive is applied, the protruding part of the lead wire can sink into the gap formed between the lead wire and the support substrate, so that even if the sample has irregularities, it can be reliably conducted with the sample with an appropriate contact pressure. be able to. Further, since the lead wire is embedded in the support substrate, the lead wire is unlikely to be peeled off from the support substrate.</p><p> Further, it is desirable that the sacrificial substrate is formed of a meltable material in the sacrificial substrate forming step, and the sacrificial substrate is melted and removed in the removing step. The sacrificial substrate can be melted and removed in the removal step.</p><p> Further, in the sacrificial substrate forming step, the sacrificial substrate having a sacrificial film formed on the surface having the recess is formed, in the lead wire forming step, the conducting wire is formed on the sacrificial film, and in the removing step. It is desirable to remove the sacrificial substrate by removing the sacrificial film and separating the sacrificial substrate and the lead wire. By removing the sacrificial film and separating the sacrificial substrate and the lead wire, the time required for removing the sacrificial substrate can be shortened.</p><p> Further, in the sacrificial substrate forming step and the sacrificial layer forming step, the sacrificial substrate and the sacrificial layer are formed of different materials that can be selectively removed, and in the removing step, the sacrificial substrate and the sacrificial layer are formed. It is desirable to remove the layer in a separate step. By forming the sacrificial substrate and the sacrificial layer with different materials that can be selectively removed, it is possible to cope with a manufacturing process in which the sacrificial substrate and the sacrificial layer are removed in a separate process.</p><p> Further, in the sacrificial substrate forming step and the sacrificial layer forming step, the sacrificial substrate and the sacrificial layer are formed of a material that can be removed in the same step in the removing step, and in the removing step, the sacrificial substrate and the sacrificial substrate are formed. It is desirable to remove the sacrificial layer in the same process. By forming the sacrificial substrate and the sacrificial layer with a material that can be removed in the same step in the removing step, the removing step can be simplified.</p><p> The probe unit for achieving the above object includes a support substrate, a bridge portion in which both ends are joined to the support substrate and the middle protrudes from the support substrate and has a gap between the support substrate and the sample. It includes a lead wire having a lead portion connected to the bridge portion and at least a part thereof embedded in the support substrate. Since the middle of the bridge portion protrudes from the support substrate and has a gap between the bridge portion and the support substrate, the middle portion of the bridge portion can sink into the gap between the support substrate and the support substrate when overdrive is applied. Therefore, even if the sample has irregularities, it can be reliably conducted with the sample with an appropriate contact pressure. Further, since at least a part of the lead portion is embedded in the support substrate, the lead wire is unlikely to be peeled off from the support substrate.</p><p> Further, it is desirable that the lead portion is bent. By bending the lead portion, the wire length of the lead portion embedded in the support substrate becomes long, so that the lead wire is less likely to be peeled off from the support substrate.</p>

Hereinafter, examples of the present invention will be described with reference to the drawings. First, the probe unit will be described based on a plurality of examples. (First Example of Probe Unit) FIG. 1 is a schematic diagram showing the configuration of the probe unit 1 according to the first embodiment of the probe unit. The support substrate 2 has a plate shape, and a groove portion 4 is formed. The probe 6 as a lead wire includes a bridge portion 8 erected above the groove portion 4 and a lead portion 10 connected to an inspection device main body (not shown) to transmit and receive inspection signals. The bridge portion 8 is a portion that comes into contact with the electrode of the sample during the continuity test. Both ends of the bridge portion 8 are connected to the lead portion 10, and a protrusion 11 is formed in the center. The lead portion 10 is embedded in the support substrate 2. Probe 6 contains at least one metal of, for example, Ni, Fe, Co, Cu, Ag, Ru, Rh, Pd, Mo, Nb, Pt, Au, Os, Ir, W, Re, Ta, Hf and the like. The material may be a single metal material, or an alloy or laminate using a plurality of metals may be used.

FIG. 2 is a schematic diagram illustrating a continuity test method for the sample 12 using the probe unit 1. By bringing the protrusion 11 of the bridge portion 8 into one-to-one contact with the electrode 14 of the sample 12, the probe 6 and the electrode 14 of the sample 12 are made conductive. First, as shown in FIGS. 2 (A1) and 2 (B1), the probe unit 1 is arranged with respect to the sample 12 so that each probe 6 and each electrode 14 of the sample 12 have a one-to-one correspondence. Next, as shown in FIGS. 2 (A2) and 2 (B2), the probe unit 1 is brought close to the sample 12, the protrusion 11 of the bridge portion 8 of each probe 6 is brought into contact with each electrode 14, and the probe unit 1 is further moved. Bring it closer to specimen 12 (ie, overdrive). By applying overdrive, the bridge portion 8 of each probe 6 bends individually. As a result, the contact pressure between the protrusion 11 of the bridge portion 8 of each probe 6 and each electrode 14 increases, so that each probe 6 and each electrode 14 of the sample 12 can be reliably conducted.

Next, with each probe 6 and each electrode 14 of the sample 12 conducting, a test signal is input to the sample 12 from the main body of the test device through the lead portion 10, the bridge portion 8, and the protrusion 11, and the sample 12 is subjected to. Perform a continuity test. When the sample 12 and the probe unit 1 are separated from each other after the continuity test is completed, the bridge portion 8 is elastically restored to the state before the test.

According to the probe unit 1 according to the first embodiment of the probe unit of the present invention described above, the groove portion 4 is formed in the support substrate 2, and the bridge portion 8 is erected above the groove portion 4. Therefore, when the probe unit 1 is overdriven, the bridge portion 8 can sink into the groove portion 4. Therefore, even if the sample 12 has irregularities, it can be reliably conducted with the sample with an appropriate contact pressure. Further, since the lead portion 10 is embedded in the support substrate 2, the probe 6 is unlikely to be peeled off from the support substrate 2. Further, since the protrusion 11 of the bridge portion 8 protrudes from the support substrate 2, there is no possibility that a portion other than the protrusion 11 comes into contact with the sample 12 and damages the sample 12.

The shape of the groove 4 can be appropriately selected according to the design conditions of the probe unit. Further, the groove portion 4 may not be formed. Specifically, for example, as shown in FIG. 3, the bridge portion 8 of the probe unit 16 may project away from the support substrate 2 and have a gap between the probe unit 16 and the support substrate 2. Further, as shown in FIG. 4, a part of the lead portion 10 of the probe unit 17 may be embedded in the support substrate 2. Further, as shown in FIG. 5, the probe unit 18 bridge portion 8 does not have to have the protrusion 11.

(Second Example of Probe Unit) FIG. 6 shows the probe unit 20 according to the second embodiment of the probe unit of the present invention. In the second embodiment of the probe unit, substantially the same parts as those of the first embodiment of the probe unit are designated by the same reference numerals and the description thereof will be omitted.

The lead portion 10 of the probe unit 20 is bent in a zigzag shape. Since the wire length of the lead portion 10 embedded in the support substrate 2 becomes long, the probe 6 does not easily come off from the support substrate 2. The shape of the lead portion 10 is not limited to the zigzag shape. Specifically, for example, the lead portion 10 may be bent in a wavy shape.

A transparent material such as a transparent resin may be used for the support substrate 2 of the probe units 1, 16, 17, 18 and 20. Since the electrode 14 of the sample 12 can be confirmed from the side where the probe 6 of the support substrate 2 is not formed, the probe units 1 and 16 so that each probe 6 and each electrode 14 of the sample 12 have a one-to-one correspondence during the continuity test. , 17, 18, and 20 are easier to place for sample 12.

Next, a method of manufacturing the probe unit will be described based on a plurality of examples. (First Example of Manufacturing Method) FIGS. 7 to 12 are diagrams for explaining the first embodiment of the manufacturing method of the probe unit 1. (A1) to (A21) of FIGS. 7 to 12 correspond to the a1-a1 line sectional views of FIG. 1 (A), and (B1) to (B21) of FIGS. 7 to 12 are of FIG. 1 (A). Corresponds to the side view.

7 and 8 are diagrams illustrating a process of forming the first substrate 100, the first layer 106, and the second layer 112. The first substrate 100, the first layer 106, and the second layer 112 correspond to the sacrificial substrates described in the claims. Further, a series of steps for forming these corresponds to a sacrificial substrate forming step. Hereinafter, the first substrate 100, the first layer 106, and the second layer 112 are referred to as sacrificial substrates 118.

First, a photoresist is applied on the surface of the first substrate 100 to form the first resist film 102 (see FIGS. 7 (A2) and 7 (B2)). The first substrate 100 is an etchable metal such as Cu, Sn, Cr, and Al. Hereinafter, the first substrate 100 will be described as Cu. Next, a mask having a predetermined shape is placed, and an exposure development process is performed to remove an unnecessary first resist film 102 to form a rod-shaped first resist pattern 104 (see FIGS. 7 (A3) and 7 (B3)). .. To remove the photoresist such as the first resist film 102, a liquid agent such as N-methyl-2-pyrrolidone is used. Next, the first layer 106 is formed by plating Cu on the first substrate 100 (see FIGS. 7 (A4) and 7 (B4)). Next, the first resist pattern 104 is removed to form a groove-shaped first recess 108 (see FIGS. 7 (A5) and 7 (B5)).

Next, a photoresist is applied on the first layer 106 and on the inner wall of the first recess 108 to form a second resist film 109 (see FIGS. 8 (A6) and 8 (B6)). Next, a mask having a predetermined shape is arranged, an exposure development process is performed to remove an unnecessary second resist film 109, and a second resist pattern 110 covering the first recess 108 and the first layer 106 on the periphery thereof is formed. Form (see Figures 8 (A7), (B7)). Next, Cu is plated on the first layer 106 to form the second layer 112 (see FIGS. 8 (A8) and 8 (B8)). The second layer 112 may be formed by sputtering or the like. Next, the second resist pattern 110 is removed to form the second recess 114 (see FIGS. 8 (A9) and 8 (B9)). A first recess 108 is formed on the bottom surface of the second recess 114. The first recess 108 and the second recess 114 correspond to the recesses described in the claims. Hereinafter, the first recess 108 and the second recess 114 are simply referred to as the recess 116. In the first embodiment, the first layer 106 is formed on the first substrate 100 by plating, but instead of this, it may be formed by a sputtering method. At this time, unlike plating, it does not grow selectively and is formed on the entire surface, so that the first layer 106 is also formed on the first resist pattern 104. When the first resist pattern 104 is subsequently removed, the unnecessary first layer 106 is also removed by lift-off. If the first layer 106 is removed by polishing the entire surface prior to lift-off, the removal time of the first resist pattern can be shortened.

By the sacrificial substrate forming step described above, the sacrificial substrate 118 composed of the first substrate 100, the first layer 106, and the second layer 112 and having the recess 116 can be formed.

9 and 10 are diagrams illustrating a process of forming the first lead wire 126 and the second lead wire 128. The first lead wire 126 and the second lead wire 128 are the probes 6 in the embodiment of the probe unit, and correspond to the lead wires described in the claims. In addition, the series of steps for forming these corresponds to the lead wire forming step described in the claims. First, the first seed layer 120 is formed on the second layer 112 and on the inner wall of the recess 116 (see FIGS. 9 (A10) and 9 (B10)). The first seed layer 120 includes, for example, a single layer of Ni (film thickness 0.1 μm), a multi-layer of Ti (film thickness 0.05 μm) and Ni (film thickness 0.1 μm), Cr (film thickness 0.05 μm) and a NiFe alloy (thickness 0.05 μm). Use a multi-layer of 0.1 μm). The method for forming the first seed layer 120 is sputtering, vapor deposition, CVD (Chemical Vapor Deposition), electroless plating, or the like.

Next, a photoresist is applied onto the first seed layer 120 to form a third resist film 122 (see FIGS. 9 (A11) and 9 (B11)). Next, a mask having a predetermined shape is placed, and an exposure development process is performed to remove an unnecessary third resist film 122 to form a first opening 125, and an inner wall of the recess 116 is formed on the first seed layer 120. A third resist pattern 124 is formed along the recess 116 (see FIGS. 9 (A12) and 9 (B12)).

Next, the first lead wire 126 is formed on the first seed layer 120 exposed from the first opening 125 by plating (see FIGS. 10 (A13) and (B13)). As the plating material, for example, any one of Ni, NiCo alloy, NiFe alloy, Cu, Au, Rh, etc., or a combination thereof is used. The first lead wire 126 may be formed by sputtering or the like. At that time, the first seed layer may not be formed, but the first lead wire 126 may be formed on the surfaces of the second layer 112 and the recess 116. Next, the third resist pattern 124 is removed (see FIGS. 10 (A14) and 10 (B14)). The first seed layer 120, which is not covered by the first lead 126, is then removed to form the second lead 128 (see FIGS. 10 (A15), (B15)). A method such as ion milling is used to remove the first seed layer 120.

FIG. 11 is a diagram illustrating a process of forming the sacrificial layer 138. The step of forming the sacrificial layer 138 corresponds to the sacrificial layer forming step described in the claims. First, a photoresist is applied to form a fourth resist film 132 on the second layer 112 so as to bury the probe 6 (see FIGS. 11 (A16) and 11 (B16)). Next, a mask having a predetermined shape is placed, and an exposure development process is performed to remove an unnecessary fourth resist film 132 to form a second opening 134 (see FIGS. 11 (A17) and 11 (B17)). .. Next, Cu is plated on the probe 6 and the second layer 112 exposed from the second opening 134 to form a sacrificial layer 138 so as to bury the probe 6 (FIGS. 11 (A18), (B18)). reference). The sacrificial layer 138 may be formed by another method such as sputtering. Next, the fourth resist pattern 136 is removed (see FIGS. 11 (A19) and 11 (B19)).

FIG. 12 is a diagram illustrating a step of forming the support substrate 2 and a step of removing the sacrificial substrate 118 and the sacrificial layer 138. The step of forming the support substrate 2 and the step of removing the sacrificial substrate 118 and the sacrificial layer 138 correspond to the support substrate forming step and the removing step described in the claims, respectively. First, an insulating material is molded so that the sacrificial layer 138 and the probe 6 are embedded on the second layer 112 to form the support substrate 2 (see FIGS. 12 (A20) and 12 (B20)). The insulating material may be an organic material such as polyimide or epoxy, an inorganic material such as glass, or a mixed material of an organic material such as FRP (Fiber Reinforced Plastics) and an inorganic material. Next, the sacrificial layer 138, the first substrate 100, the first layer 106, and the second layer 112 are removed by etching or the like (see FIGS. 12 (A21) and 12 (B21)).

According to the manufacturing method according to the first embodiment of the manufacturing method of the present invention described above, the probe formed in the recess 116 is formed in order to form the probe 6 that crosses the recess 116 along the inner wall of the recess 116 of the sacrificial substrate 118. The portion 6 projects in the direction away from the support substrate 2. Further, since the insulating material is molded so as to bury the probe 6 to form the support substrate 2, the probe 6 is embedded in the support substrate 2. Further, in order to remove the sacrificial layer 138 formed between the probe 6 and the support substrate 2, a gap can be formed between the probe 6 and the support substrate 2. Further, since the first substrate 100, the first layer 106, and the second layer 112 are formed of Cu, the sacrificial substrate 118 can be removed by etching in the removing step. Further, since the sacrificial substrate 118 and the sacrificial layer 138 are formed of Cu of the same material, the sacrificial substrate 118 and the sacrificial layer 138 can be removed in the same step in the removing step. The first layer 106 and the second layer 112 may be formed of a material different from that of the first substrate 100.

(Second Example of Manufacturing Method) In the manufacturing method of the probe unit 1 according to the second embodiment of the manufacturing method, the sacrificial substrate 118 and the sacrificial layer 138 are removed in a separate step. In the second embodiment of the manufacturing method, substantially the same parts as those of the first embodiment of the manufacturing method are designated by the same reference numerals and the description thereof will be omitted.

The sacrificial substrate 118 and the sacrificial layer 138 according to the manufacturing method of the probe unit 1 according to the second embodiment of the manufacturing method are formed of materials that can be selectively removed from each other.

FIG. 13 is a diagram illustrating a removal step according to a second embodiment of the manufacturing method. (A1) to (A3) of FIG. 13 correspond to the a1-a1 line sectional views of FIG. 1 (A), and (B1) to (B3) of FIG. 13 correspond to the side views of FIG. 1 (A). To do. First, the sacrificial substrate 118 is removed (see FIGS. 13 (A2) and 13 (B2)). Next, the sacrificial layer 138 is removed (see FIGS. 13 (A3) and 13 (B3)).

According to the manufacturing method according to the second embodiment of the manufacturing method described above, since the sacrificial substrate 118 and the sacrificial layer 138 are formed of materials that can be selectively removed from each other, the sacrificial substrate 118 and the sacrificial layer 138 are separated in the removing step. It can be removed in a separate process. Although it has been described that the sacrificial layer 138 is removed after the sacrificial substrate 118 is removed in the removing step, the sacrificial layer 138 may be removed first.

(Third Example of Manufacturing Method) In the manufacturing method of the probe unit 18 according to the third embodiment of the manufacturing method, the probe unit 18 and the sacrificial substrate 212 are separated and removed in the removing step. In the third embodiment of the manufacturing method, substantially the same parts as those of the first embodiment of the manufacturing method are designated by the same reference numerals and the description thereof will be omitted.

14 to 16 are diagrams illustrating a third embodiment of the manufacturing method. 14 to 16 (A1) to (A9) correspond to the a4-a4 line sectional view of FIG. 5 (A), and FIGS. 14 to 16 (B1) to (B9) are side views of FIG. 5 (A). Corresponds to.

14 and 15 are diagrams illustrating a sacrificial substrate manufacturing process according to a third embodiment of the manufacturing method. In the sacrificial substrate manufacturing process according to the third embodiment of the manufacturing method, the sacrificial substrate 212 composed of the second substrate 200, the second seed layer 208, and the sacrificial film 210 is formed. First, a photoresist is applied on the surface of the second substrate 200 to form a fifth resist film 202 (see FIGS. 14 (A2) and 14 (B2)). Next, a mask having a predetermined shape is placed, and an exposure development process is performed to remove an unnecessary fifth resist film 202 to form a third opening 204 that exposes the surface of the second substrate 200 (FIG. 14 (A3)). ), (B3)). Next, the second substrate 200 exposed from the third opening 204 is removed to a predetermined depth by etching or the like to form the third recess 206 (see FIGS. 14 (A4) and 14 (B4)). The third recess 206 may be formed by cutting, grooving, sandblasting, electric discharge machining (when the second substrate 200 is conductive) or the like. Next, the fifth resist film 202 is removed (see FIGS. 15 (A5) and 15 (B5)).

Next, the second seed layer 208 is formed on the second substrate 200 (see FIGS. 15 (A6) and 15 (B6)). The second seed layer 208 includes, for example, a single layer of Ni (film thickness 0.1 μm), a multi-layer of Ti (film thickness 0.05 μm) and Ni (film thickness 0.1 μm), Cr (film thickness 0.05 μm) and a NiFe alloy (thickness 0.05 μm). Use a multi-layer of 0.1 μm). The method for forming the first seed layer 120 is, for example, sputtering, vapor deposition, CVD, electroless plating, or the like. Next, a sacrificial film 210 is formed on the second seed layer 208 by plating (see FIGS. 15 (A7) and 15 (B7)). The sacrificial film 210 is a material that can be selectively removed with respect to the second substrate 200. The sacrificial film 210 may be formed by sputtering or the like. At that time, the sacrificial film 210 may be formed on the second substrate 200 without forming the second seed layer 208.

FIG. 16 is a diagram illustrating a removal step according to a third embodiment of the manufacturing method. After forming the probe 6, the sacrificial layer 138, and the support substrate 2 on the sacrificial substrate 212 (see FIGS. 16A8 and 16B8) in the same manner as in the first embodiment of the manufacturing method, the second seed layer 208 The side of the second substrate 200 on which the sacrificial film 210 is not formed is removed by polishing or the like until it is exposed (see FIGS. 16 (A9) and 16 (B9)). Next, the sacrificial film 210, the second seed layer 208, and the sacrificial layer 138 are removed by etching or the like. By removing the sacrificial membrane 210 and the second seed layer 208, the probe unit 18 including the probe 6 and the support substrate 2 and the second substrate 200 can be separated (see FIGS. 16 (A10) and 16 (B10)).

According to the manufacturing method according to the third embodiment of the manufacturing method of the present invention described above, in the sacrificial substrate forming step, the sacrificial substrate 212 composed of the second substrate 200, the second seed layer 208, and the sacrificial film 210 is formed. In order to remove the sacrificial film 210 and the second seed layer 208 in the removing step, the sacrificial substrate 212 can be removed by separating the probe unit 18 including the probe 6 and the support substrate 2 and the second substrate 200. Further, since the sacrificial film 210 and the second seed layer 208 are removed by etching or the like after the second seed layer 208 is exposed from the second substrate 200, the sacrificial film 210 and the second seed layer 208 can be removed in a short time. .. The second substrate 200 may be removed until the sacrificial film 210 is exposed, or the sacrificial film 210 and the second seed layer 208 may be removed without removing the second substrate 200.

In the above embodiment, materials that can be selectively removed such as Ni and Ti for the second seed layer 208 and Cu for the sacrificial film 210 can be used, and therefore, etching is performed with an etching that dissolves each material in the removal step. be able to. Alternatively, either or both of the second seed layer 208 and the sacrificial film 210 may be formed of a low melting point metal such as Sn or solder. If either the second seed layer 208 or the sacrificial film 210 is formed of a low melting point metal, the second seed layer or the sacrificial film 210 can be melted by heating to separate the probe unit 18 and the second substrate 200. .. If both the second seed layer 208 and the sacrificial film 210 are formed of a low melting point metal, they can be removed at the same time. After that, the sacrificial film 210 and the second seed layer 208 remaining on the probe unit 18 are removed by etching or the like.

According to the manufacturing methods according to the first to third embodiments of the manufacturing method, the probe units 16, 17 and 20 can also be manufactured. Specifically, for example, if the sacrificial layer 138 is formed only in the recess 116 as shown in FIG. 17, the probe unit 16 having no groove 4 can be manufactured. Further, if a part of the lead wire 6 is covered with a resist or the like before the support substrate 2 is formed, a probe unit 17 in which a part of the lead portion 10 is embedded in the support substrate 2 can be manufactured. Further, if the zigzag-shaped first opening 125 is formed, the probe unit 20 in which the lead portion 10 has a zigzag shape can be manufactured.

<figref num="1">(A) is a plan view of the probe unit according to the first embodiment of the probe unit. (B) is a cross-sectional view taken along the line a1-a1 of (A).</figref><figref num="2">(A) is a schematic diagram showing the continuity test method according to the first embodiment of the probe unit.</figref><figref num="3">(A) is a plan view of the probe unit according to the first embodiment of the probe unit. (B) is a cross-sectional view taken along the line a2-a2 of (A).</figref><figref num="4">(A) is a plan view of the probe unit according to the first embodiment of the probe unit. (B) is a cross-sectional view taken along the line a3-a3 of (A).</figref><figref num="5">(A) is a plan view of the probe unit according to the first embodiment of the probe unit. (B) is a cross-sectional view taken along the line a4-a4 of (A).</figref><figref num="6">(A) is a plan view of the probe unit according to the second embodiment of the probe unit. (B) is a cross-sectional view taken along the line a5-a5 of (A).</figref><figref num="7">It is explanatory drawing which concerns on 1st Example of the manufacturing method of a probe unit.</figref><figref num="8">It is explanatory drawing which concerns on 1st Example of the manufacturing method of a probe unit.</figref><figref num="9">It is explanatory drawing which concerns on 1st Example of the manufacturing method of a probe unit.</figref><figref num="10">It is explanatory drawing which concerns on 1st Example of the manufacturing method of a probe unit.</figref><figref num="11">It is explanatory drawing which concerns on 1st Example of the manufacturing method of a probe unit.</figref><figref num="12">It is explanatory drawing which concerns on 1st Example of the manufacturing method of a probe unit.</figref><figref num="13">It is explanatory drawing which concerns on 2nd Example of the manufacturing method of a probe unit.</figref><figref num="14">It is explanatory drawing which concerns on 3rd Example of the manufacturing method of a probe unit.</figref><figref num="15">It is explanatory drawing which concerns on 3rd Example of the manufacturing method of a probe unit.</figref><figref num="16">It is explanatory drawing which concerns on 3rd Example of the manufacturing method of a probe unit.</figref><figref num="17">It is explanatory drawing which concerns on 1st Example to 3rd Example of the manufacturing method of a probe unit.</figref>

Code description

1, 16, 17, 18, 20 probe units, 2 support boards, 6 probes, 8 bridges, 10 reeds, 116 recesses, 118, 212 sacrificial boards, 138 sacrificial layers