Peeling method, semiconductor device, and manufacturing method therefor

Description: TECHNICAL FIELD [Detailed description of the invention]

【0001】

[Technical field to which the invention belongs]

The present invention relates to a method for peeling a layer to be peeled, particularly a method for peeling a layer to be peeled including various elements. In addition, the present invention relates to a semiconductor device having a circuit composed of a thin film transistor (hereinafter referred to as TFT) in which a peeled layer to be peeled is attached to a substrate and transferred, and a method for manufacturing the same. For example, the present invention relates to an electro-optical device represented by a liquid crystal module, a light emitting device represented by an EL module, and an electronic device equipped with such a device as a component.

【0002】

In the present specification, the semiconductor device refers to all devices that can function by utilizing the semiconductor characteristics, and the electro-optical device, the light emitting device, the semiconductor circuit, and the electronic device are all semiconductor devices.

【0003】

[Conventional technology]

In recent years, attention has been focused on a technique for forming a thin film transistor (TFT) using a semiconductor thin film (thickness of several to several hundred nm) formed on a substrate having an insulating surface. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and their development is urgently needed, especially as switching elements for image display devices.

【0004】

Various applications using such an image display device are expected, but the use for mobile devices is particularly attracting attention. Currently, glass substrates and quartz substrates are often used, but they have the disadvantage of being easily broken and heavy. Further, in mass production, it is difficult to increase the size of a glass substrate or a quartz substrate, which is not suitable. Therefore, attempts have been made to form a TFT element on a flexible substrate, typically a flexible plastic film.

【0005】

However, since the heat resistance of the plastic film is low, the maximum temperature of the process must be lowered, and as a result, it is not possible to form a TFT having better electrical characteristics than when it is formed on a glass substrate. Therefore, a high-performance liquid crystal display device or light emitting element using a plastic film has not been realized.

【0006】

Further, a peeling method for peeling the peeled layer existing on the substrate via the separating layer from the substrate has already been proposed. For example, in the techniques described in JP-A-10-125929 and JP-A-10-125931, a separation layer made of amorphous silicon (or polysilicon) is provided and passed through a substrate to irradiate a laser beam. By releasing hydrogen contained in amorphous silicon, voids are created to separate the substrate. In addition, there is also a description in JP-A-10-125930 that this technique is used to attach a layer to be peeled (referred to as a layer to be transferred in the publication) to a plastic film to complete a liquid crystal display device.

【0007】

However, in the above method, it is essential to use a highly translucent substrate, which gives sufficient energy to pass through the substrate and further release hydrogen contained in amorphous silicon, so that a relatively large laser is used. There is a problem that irradiation with light is required and the layer to be peeled is damaged. Further, in the above method, when an element is formed on the separation layer, hydrogen contained in the separation layer is diffused and reduced if high-temperature heat treatment or the like is performed in the element fabrication process, and the separation layer is irradiated with laser light. Even so, there is a risk that peeling will not be performed sufficiently. Therefore, in order to maintain the amount of hydrogen contained in the separation layer, there is a problem that the process after forming the separation layer is limited. Further, in the above publication, there is a description that a light-shielding layer or a reflective layer is provided in order to prevent damage to the peeled layer, but in that case, it is difficult to manufacture a transmissive liquid crystal display device. In addition, with the above method, it is difficult to peel off the layer to be peeled off having a large area.

【0008】

[Problems to be Solved by the Invention]

The present invention has been made in view of the above problems, and the present invention provides a peeling method that does not damage the peeled layer, and not only peels the peeled layer having a small area but also a large area. An object of the present invention is to enable the peeled layer to be peeled off over the entire surface.

【0009】

Another object of the present invention is to provide a peeling method that is not limited by the heat treatment temperature, the type of substrate, etc. in the formation of the layer to be peeled.

【0010】

Another object of the present invention is to provide a lightweight semiconductor device and a method for manufacturing the same by attaching a layer to be peeled to various base materials. In particular, to provide a lightweight semiconductor device and a manufacturing method thereof by attaching various elements (thin film diode, photoelectric conversion element composed of a PIN junction of silicon and a silicon resistance element) typified by TFT to a flexible film. Is an issue.

【0011】

[Means for solving problems]

Through many experiments and studies, the present inventors provided a nitride layer, preferably a metal nitride layer, provided on the substrate, provided an oxide layer in contact with the metal nitride layer, and further provided an oxide layer. When a film is formed or heat-treated at 500 ° C or higher, no process abnormality such as film peeling (peeling) occurs, but physical means, typically mechanical force, is applied (for example, human). We have found a peeling method that can be easily separated in or at the interface of the oxide layer by peeling it off by hand.

【0012】

That is, while the bonding force between the nitride layer and the oxide layer is strong enough to withstand thermal energy, the film stresses of the nitride layer and the oxide layer are different from each other, and the nitride layer and the oxide layer are oxidized. Since it has stress strain between it and the material layer, it is vulnerable to mechanical energy and is ideal for peeling. The present inventors refer to the peeling step of performing peeling using the film stress as a stress peel-off process.

【0013】

In the present specification, the internal stress of a film (referred to as film stress) means that one side of the cross section exerts on the other side when an arbitrary cross section is considered inside the film formed on the substrate. It is the force per unit cross-sectional area. It can be said that the internal stress is more or less always present in the thin film formed by vacuum deposition, sputtering, vapor deposition, or the like. Its value is up to 10⁹N / m²To reach. The internal stress value changes depending on the material of the thin film, the substance of the substrate, the conditions for forming the thin film, and the like. The internal stress value also changes by performing heat treatment.

【0014】

Further, the state in which the force exerted on the other party through the unit cross-sectional area perpendicular to the substrate surface is in the pulling direction is called the tensile state, the internal stress at that time is called the tensile stress, and the state in the pushing direction is called the compressed state. The internal stress is called compressive stress. In this specification, the tensile stress is positive (+) and the compressive stress is negative (-) when shown in a graph or table.

【0015】

The configuration 1 of the invention relating to the peeling method disclosed in the present specification is a peeling method for peeling a layer to be peeled from a substrate, wherein a nitride layer is provided on the substrate, and the nitride layer is provided. After forming a delamination layer composed of a laminate containing at least an oxide layer in contact with the nitride layer on the substrate, the delamination layer is subjected to the oxide layer from the substrate provided with the nitride layer by physical means. It is a peeling method characterized by peeling in a layer or at an interface.

【0016】

Further, the support may be peeled off after being adhered with an adhesive, and the configuration 2 of the invention relating to the peeling method disclosed in the present specification is a peeling method for peeling the layer to be peeled from the substrate, which is on the substrate. A nitride layer is provided, and a stripped layer made of a laminate including at least an oxide layer in contact with the nitride layer is formed on a substrate provided with the nitride layer, and a support is provided on the stripped layer. This is a peeling method characterized by peeling the peeled layer adhered to the support from the substrate provided with the nitride layer in the layer or at the interface of the oxide layer by physical means after bonding. ..

【0017】

Further, in the above configuration 2, in order to further promote peeling, heat treatment or laser light may be irradiated before adhering the support. In this case, a material that absorbs laser light may be selected for the nitride layer, and the interface between the nitride layer and the oxide layer may be heated to facilitate peeling. However, when laser light is used, a translucent substrate is used.

【0018】

Further, in each of the above configurations, the nitride layer may be provided with another layer such as an insulating layer or a metal layer between the substrate and the nitride layer, but in order to simplify the process, the nitride layer may be provided on the substrate. It is preferable to form a nitride layer in contact with each other.

【0019】

Further, instead of the nitride layer, a metal layer, preferably a metal nitride layer, may be provided, a metal layer provided on the substrate, preferably a metal nitride layer is provided, and an oxide layer is provided in contact with the metal nitride layer, and further. Even if a film forming treatment or a heat treatment at 500 ° C. or higher is performed, the film can be easily separated in the oxide layer or at the interface by physical means without causing peeling.

【0020】

The configuration 3 of the invention relating to the peeling method disclosed in the present specification is a peeling method for peeling a layer to be peeled from a substrate, wherein a metal layer is provided on the substrate and the metal layer is provided on the substrate. After forming a layer to be peeled from a laminate including an oxide layer in contact with at least the metal layer, the layer to be peeled is placed in or at the interface of the oxide layer from a substrate provided with the metal layer by physical means. It is a peeling method characterized by peeling in.

【0021】

Further, the support may be peeled off after being adhered with an adhesive, and the configuration 4 of the invention relating to the peeling method disclosed in the present specification is a peeling method for peeling the layer to be peeled off from the substrate, which is on the substrate. A metal layer is provided, and after forming a layer to be peeled from a laminate including an oxide layer in contact with at least the metal layer on a substrate provided with the metal layer and adhering a support to the layer to be peeled. The peeling method is characterized in that the peelable layer adhered to the support is peeled off from the substrate provided with the metal layer by physical means in the layer or at the interface of the oxide layer.

【0022】

Further, also in the above configuration 4, in order to further promote peeling, heat treatment or laser light may be irradiated before adhering the support. In this case, a material that absorbs laser light may be selected for the metal layer, and the interface between the metal layer and the oxide layer may be heated to facilitate peeling. However, when laser light is used, a translucent substrate is used.

【0023】

In the present specification, the physical means is not chemistry but a means recognized by physics, and specifically, a mechanical means or a mechanical means having a process that can be reduced to the law of mechanics. , Refers to a means of changing some mechanical energy (mechanical energy).

【0024】

However, in both the above-mentioned configurations 2 and the above-mentioned configurations 4, it is necessary to make the bonding force between the oxide layer and the metal layer smaller than the bonding force with the support when peeling by physical means. is there.

【0025】

Further, in the above configuration 3 or the above configuration 4, the metal layer is Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, It is characterized in that it is an element selected from Ir and Pt, a single layer composed of an alloy material or a compound material containing the element as a main component, or a laminate of a metal or a mixture thereof.

【0026】

Further, in the above configuration 3 or the above configuration 4, the metal layer may be provided with another layer such as an insulating layer between the substrate and the metal layer, but in order to simplify the process, the metal layer is in contact with the substrate. It is preferable to form a metal layer.

【0027】

Further, in the present invention, not only a transparent substrate but also any substrate such as a glass substrate, a quartz substrate, a semiconductor substrate, a ceramics substrate, and a metal substrate can be used, and a peeling layer provided on the substrate can be used. Can be peeled off.

【0028】

Further, in each of the above configurations, the oxide layer is characterized by being a single layer made of a silicon oxide material or a metal oxide material, or a laminate thereof.

【0029】

Further, in each of the above configurations, in order to further promote peeling, a treatment of heat treatment or irradiation with laser light may be performed before peeling by the physical means.

【0030】

Further, using the peeling method of the present invention, it is also possible to attach (transfer) the layer to be peeled on the substrate to a transfer body to manufacture a semiconductor device, and the present invention relating to a method for manufacturing a semiconductor device. The configuration is composed of a step of forming a nitride layer on a substrate, a step of forming an oxide layer on the nitride layer, a step of forming an insulating layer on the oxide layer, and a step of forming an insulating layer on the insulating layer. A step of forming an element, a step of adhering a support to the element and then peeling the support from a substrate by physical means in the layer or at an interface of the oxide layer, and a step of peeling the support from the substrate or the oxide layer. A method for manufacturing a semiconductor device, which comprises a step of adhering a transfer body to a device and sandwiching the element between the support and the transfer body.

【0031】

Further, in the above configuration, in order to further promote peeling, heat treatment or laser light may be irradiated before adhering the support. In this case, a material that absorbs laser light may be selected for the nitride layer, and the interface between the nitride and the oxide layer may be heated to facilitate peeling. However, when laser light is used, a translucent substrate is used.

【0032】

Further, in order to promote peeling, a granular oxide may be provided on the nitride layer and an oxide layer covering the granular oxide may be provided to facilitate peeling, and the present invention relates to a method for manufacturing a semiconductor device. Is a step of forming a nitride layer on a substrate, a step of forming a granular oxide on the nitride layer, a step of forming an oxide layer covering the oxide, and a step of forming the oxide layer on the oxide layer. A step of forming an insulating layer, a step of forming an element on the insulating layer, and after adhering a support to the element, the support is attached from a substrate by physical means in the layer of the oxide layer or at an interface. A method for manufacturing a semiconductor device, which comprises a step of peeling and a step of adhering a transfer body to the insulating layer or the oxide layer and sandwiching the element between the support and the transfer body. is there.

【0033】

Further, the constitution of the invention relating to the manufacturing method of another semiconductor device includes a step of forming a layer containing a metal material on a substrate, a step of forming an oxide layer on the layer containing the metal material, and the oxidation. A step of forming an insulating layer on a material layer, a step of forming an element on the insulating layer, and after adhering a support to the element, the support is attached from a substrate by physical means to a layer of the oxide layer. A semiconductor device comprising a step of peeling at an inner or an interface and a step of adhering a transfer body to the insulating layer or the oxide layer and sandwiching the element between the support and the transfer body. It is a manufacturing method of.

【0034】

Further, in the above configuration, in order to further promote peeling, heat treatment or laser light may be irradiated before adhering the support. In this case, a material that absorbs laser light may be selected for the metal layer, and the interface between the metal layer and the oxide layer may be heated to facilitate peeling. However, when laser light is used, a translucent substrate is used.

【0035】

Further, in order to promote peeling, a granular oxide may be provided on a layer containing a metal material, and an oxide layer covering the granular oxide may be provided to facilitate peeling. The constitution of the invention comprises a step of forming a layer containing a metal material on a substrate, a step of forming a granular oxide on the layer containing the metal material, and a step of forming an oxide layer covering the oxide. A step, a step of forming an insulating layer on the oxide layer, a step of forming an element on the insulating layer, and after adhering a support to the element, the support is attached from a substrate by physical means. It has a step of peeling off in or at an interface of the oxide layer, and a step of adhering a transfer body to the insulating layer or the oxide layer and sandwiching the element between the support and the transfer body. This is a method for manufacturing a characteristic semiconductor device.

【0036】

In the above configuration, the layer containing the metal material is preferably a nitride, and the metal material is Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, It is characterized by being a single layer composed of an element selected from Zn, Ru, Rh, Pd, Os, Ir, Pt, an alloy material or a compound material containing the element as a main component, or a laminate of a metal or a mixture thereof. It is said.

【0037】

Further, it is also possible to produce a semiconductor device by peeling the layer to be peeled provided on the substrate by using the peeling method of the present invention and then attaching the layer to the first transfer body or the second transfer body. The present invention relating to a method for manufacturing a semiconductor device comprises a step of forming a layer containing a metal material on a substrate, a step of forming an oxide layer on the layer containing the metal material, and a step of forming an oxide layer on the oxide layer. A step of forming an insulating layer, a step of forming an element on the insulating layer, a step of peeling from the substrate by physical means in the layer of the oxide layer or at an interface, and a step of forming the insulating layer or the oxide layer. It is characterized by having a step of adhering a first transfer body and a step of adhering a second transfer body to the element and sandwiching the element between the first transfer body and the second transfer body. This is a method for manufacturing a semiconductor device.

【0038】

In the above configuration, the layer containing the metal material is preferably a nitride, and the metal material is Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, It is characterized by being a single layer composed of an element selected from Zn, Ru, Rh, Pd, Os, Ir, Pt, an alloy material or a compound material containing the element as a main component, or a laminate of a metal or a mixture thereof. It is said.

【0039】

Further, the configuration of the invention relating to the manufacturing method of another semiconductor device includes a step of forming a nitride layer on a substrate, a step of forming an oxide layer on the nitride layer, and an insulating layer on the oxide layer. A step of forming an element on the insulating layer, a step of peeling from the substrate by physical means in the layer of the oxide layer or at an interface, and a first step on the insulating layer or the oxide layer. A semiconductor characterized by having a step of adhering a transfer body and a step of adhering a second transfer body to the element and sandwiching the element between the first transfer body and the second transfer body. This is a method for manufacturing the device.

【0040】

Further, in each of the above configurations relating to the method for manufacturing the semiconductor device, the oxide layer is characterized by being a single layer made of a silicon oxide material or a metal oxide material, or a laminate thereof.

【0041】

Further, in each of the above configurations relating to the method for manufacturing the semiconductor device, in order to further promote the peeling, a treatment of heat treatment or irradiation with laser light may be performed before the peeling by the physical means.

【0042】

Further, in each of the above configurations relating to the method for manufacturing the semiconductor device, the element is a thin film transistor having a semiconductor layer as an active layer, and in the step of forming the semiconductor layer, the semiconductor layer having an amorphous structure is heat-treated or treated. It is characterized in that it is crystallized by a process of irradiating a laser beam to form a semiconductor layer having a crystal structure.

【0043】

In the present specification, the transfer material is one that is peeled off and then adhered to the layer to be peeled off, and is not particularly limited, and may be a base material having any composition such as plastic, glass, metal, and ceramics. Further, in the present specification, the support is for adhering to the layer to be peeled when peeled by physical means, and is not particularly limited, and has any composition such as plastic, glass, metal, ceramics and the like. It may be a base material. Further, the shape of the transfer body and the shape of the support are not particularly limited, and may be a flat surface, a curved surface, a bendable shape, or a film shape. If weight reduction is the highest priority, film-like plastic substrates such as polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, and polyetherether Plastic substrates such as ketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), and polyimide are preferred.

【0044】

In each of the above configurations relating to the method for manufacturing the semiconductor device, when the liquid crystal display device is manufactured, the support may be bonded to the peeled layer by using the support as a facing substrate and the sealing material as an adhesive. In this case, the element provided in the release layer has a pixel electrode, and a liquid crystal material is filled between the pixel electrode and the facing substrate.

【0045】

Further, in each of the above configurations relating to the method for manufacturing the semiconductor device, when a light emitting device represented by a light emitting device having an EL element is manufactured, a support is used as a sealing material, and an organic compound layer such as water or oxygen is formed from the outside. It is preferable to completely block the light emitting element from the outside so as to prevent the invasion of substances that promote deterioration. Further, if weight reduction is the highest priority, a film-shaped plastic substrate is preferable, but since the effect of preventing substances that promote deterioration of the organic compound layer such as water and oxygen from entering from the outside is weak, for example, a support If a first insulating film, a second insulating film, and a third insulating film are provided on the upper surface to sufficiently prevent substances that promote deterioration of the organic compound layer such as water and oxygen from entering from the outside. Good. However, the second insulating film (stress relaxation film) sandwiched between the first insulating film (barrier film) and the third insulating film (barrier film) is the first insulating film and the said. The film stress should be smaller than that of the third insulating film.

【0046】

Further, when manufacturing a light emitting device represented by a light emitting device having an EL element, not only the support but also the transfer body is similarly formed with the first insulating film, the second insulating film, and the third insulating film. It is preferable to provide it so as to sufficiently prevent substances such as water and oxygen that promote deterioration of the organic compound layer from invading from the outside.

【0047】

(Experiment 1) Here, the following experiment was conducted in order to provide an oxide layer in contact with the nitride layer or the metal layer and to confirm whether the layer to be peeled on the oxide layer can be peeled from the substrate. ..

【0048】

First, a laminate as shown in FIG. 3 (A) is formed on the substrate.

【0049】

As the substrate 30, a glass substrate (# 1737) was used. An aluminum-silicon alloy layer 31 was formed on the substrate 30 by a sputtering method with a film thickness of 300 nm. Next, a titanium nitride layer 32 was formed on the aluminum-silicon alloy layer 31 by a sputtering method with a film thickness of 100 nm.

【0050】

Next, the silicon oxide layer 33 was formed into a film with a film thickness of 200 nm by a sputtering method. The film forming conditions of the silicon oxide layer 33 are as follows: using an RF sputtering device, using a silicon oxide target (diameter 30.5 cm), substrate temperature 150 ° C, film forming pressure 0.4 Pa, film forming power 3 kW, argon flow rate / oxygen. The flow rate was 35 sccm / 15 sccm.

【0051】

Next, a base insulating layer is formed on the silicon oxide layer 33 by a plasma CVD method. As the base insulation layer, the film deposition temperature is 300 ° C and the raw material gas SiH is used by the plasma CVD method.₄, NH₃, N₂A silicon oxynitride film 34a (composition ratio Si = 32%, O = 27%, N = 24%, H = 17%) prepared from O was formed at 50 nm. Then, after washing the surface with ozone water, the oxide film on the surface is removed with dilute hydrofluoric acid (1/100 dilution). Next, by plasma CVD method, the film formation temperature is 300 ° C, and the raw material gas SiH₄, N₂Silicon oxynitride film 34b (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) made from O is laminated to a thickness of 100 nm, and plasma is further formed without releasing to the atmosphere. Film formation temperature 300 ° C, film formation gas SiH by CVD method₄A semiconductor layer having an amorphous structure (here, an amorphous silicon layer 35) was formed with a thickness of 54 nm. (Fig. 3 (A) [0052]

Then, a nickel acetate solution containing 10 ppm of nickel in terms of weight is applied with a spinner. Instead of coating, a method of spraying the nickel element on the entire surface by a sputtering method may be used. Next, it is heat-treated and crystallized to form a semiconductor film having a crystal structure (here, a polysilicon layer 36). (Fig. 3 (B)) Here, after heat treatment for dehydrogenation (500 ° C, 1 hour), heat treatment for crystallization (550 ° C, 4 hours) is performed to form a silicon film having a crystal structure. To get. Although a crystallization technique using nickel as a metal element that promotes crystallization of silicon is used here, other known crystallization techniques such as a solid phase growth method and a laser crystallization method may be used.

【0053】

Next, an epoxy resin was used as the adhesive layer 37, and a film substrate 38 (here, polyethylene terephthalate (PET)) was attached to the polysilicon layer 36. (Fig. 3 (C)) [0054]

After obtaining the state shown in FIG. 3C, the film substrate 38 and the substrate 30 were pulled so as to be separated by a human hand. It was confirmed that at least the titanium nitride and the aluminum-silicon alloy layer remained on the peeled substrate 30. From this experiment, it is expected that the silicon oxide 33 is exfoliated in the layer or at the interface.

【0055】

In this way, by providing the oxide layer in contact with the nitride layer or the metal layer and peeling off the peelable layer provided on the oxide layer, the peelable layer can be peeled off from the substrate 30 over the entire surface. it can.

【0056】

(Experiment 2) In order to identify where the peeling is performed, an experiment was conducted in which the peeling was partially performed by the peeling method of the present invention and the cross section near the boundary was examined.

【0057】

A glass substrate (# 1737) was used as the substrate. Further, a titanium nitride layer was formed on the substrate by a sputtering method with a film thickness of 100 nm.

【0058】

Next, a silicon oxide layer was formed with a film thickness of 200 nm by a sputtering method. As for the film forming conditions of the silicon oxide layer, an RF sputtering device is used, a silicon oxide target (diameter 30.5 cm) is used, the substrate temperature is 150 ° C, the film forming pressure is 0.4 Pa, the film forming power is 3 kW, and the argon flow rate / oxygen flow rate. = 35sccm / 15sccm.

【0059】

Next, a base insulating layer is formed on the silicon oxide layer by a plasma CVD method. As the base insulation layer, the film deposition temperature is 300 ° C and the raw material gas SiH is used by the plasma CVD method.₄, NH₃, N₂A silicon oxynitride film (composition ratio Si = 32%, O = 27%, N = 24%, H = 17%) prepared from O was formed at 50 nm. Then, after washing the surface with ozone water, the oxide film on the surface is removed with dilute hydrofluoric acid (1/100 dilution). Next, by plasma CVD method, the film formation temperature is 300 ° C, and the raw material gas SiH₄, N₂Silicon oxynitride film (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) made from O is laminated to a thickness of 100 nm, and plasma CVD without releasing to the atmosphere. Film formation temperature 300 ° C, film formation gas SiH₄A semiconductor layer having an amorphous structure (here, an amorphous silicon layer) was formed with a thickness of 54 nm.

【0060】

Then, a nickel acetate solution containing 10 ppm of nickel in terms of weight is applied with a spinner. Instead of coating, a method of spraying the nickel element on the entire surface by a sputtering method may be used. Next, it is heat-treated and crystallized to form a semiconductor film having a crystal structure (here, a polysilicon layer). Here, after a heat treatment for dehydrogenation (500 ° C, 1 hour), a heat treatment for crystallization (550 ° C, 4 hours) was performed to obtain a silicon film having a crystal structure.

【0061】

The adhesive tape was then attached to a portion of the polysilicon layer and pulled by human hands to separate the adhesive tape from the substrate. Then, only the place where the adhesive tape was attached was peeled off and transferred to the tape. A TEM photograph of the peeling boundary on the substrate side is shown in FIG. 20 (A), and a schematic diagram thereof is shown in FIG. 20 (B).

【0062】

As shown in FIG. 20, the titanium nitride layer remains on the entire surface of the glass substrate, and the portion transferred by applying the tape is transferred cleanly and laminated (SiO by the splatter method).₂Membrane, insulating film (1) and (2) by PCVD method, polysilicon film) are gone. From these facts, the titanium nitride layer and SiO by the splatter method₂It can be seen that peeling occurs at the interface with the film.

【0063】

(Experiment 3) Here, when the material of the nitride layer or the metal layer is TiN, W, WN, an oxide layer (silicon oxide: film thickness 200 nm) is provided in contact with the nitride layer or the metal layer to form an oxide. The following experiment was conducted to confirm whether the layer to be peeled off provided on the layer could be peeled off from the substrate.

【0064】

As sample 1, a sputtering method was used on a glass substrate to form TiN with a film thickness of 100 nm, and then a sputtering method was used to form a silicon oxide film having a film thickness of 200 nm. After the formation of the silicon oxide film, lamination and crystallization were carried out in the same manner as in Experiment 1.

【0065】

As sample 2, a sputtering method was used on a glass substrate to form W at a film thickness of 50 nm, and then a sputtering method was used to form a silicon oxide film having a film thickness of 200 nm. After the formation of the silicon oxide film, lamination and crystallization were carried out in the same manner as in Experiment 1.

【0066】

As sample 3, a sputtering method was used on a glass substrate to form a WN with a film thickness of 50 nm, and then a sputtering method was used to form a silicon oxide film having a film thickness of 200 nm. After the formation of the silicon oxide film, lamination and crystallization were carried out in the same manner as in Experiment 1.

【0067】

Samples 1 to 3 were formed in this way, and an experiment was conducted to see if the adhesive tape was adhered to the layer to be peeled off and peeled off. The results are shown in Table 1.

【0068】

[table 1]

<img file="JP2003174153A_D0001.tif" />【0069】

In addition, the internal stress of each of the silicon oxide film, TiN film, and W film was measured before and after the heat treatment (550 ° C, 4 hours). The results are shown in Table 2.

【0070】

[Table 2]

<img file="JP2003174153A_D0002.tif" />【0071】

The silicon oxide film is measured on a silicon substrate with a film thickness of 400 nm by a sputtering method, and the TiN film and W film are formed on a glass substrate with a film thickness of 400 nm by a sputtering method. After the film was formed, the internal stress was measured, then a silicon oxide film was laminated as a cap film, heat treatment was performed, the cap film was removed by etching, and the internal stress was measured again. In addition, two samples were prepared for each and measured.

【0072】

In the W film, compressive stress (about -7 × 10) immediately after film formation⁹(Dyne / cm²)), But due to heat treatment, tensile stress (approx. 8 × 10)⁹~9×10⁹(Dyne / cm²)), And the peeled state was good. Regarding the TiN film, the stress is almost the same before and after the heat treatment, and the tensile stress (about 3.9 × 10)⁹~4.5×10⁹(Dyne / cm²)) Remained. Regarding the silicon oxide film, the stress is almost the same before and after the heat treatment, and the compressive stress (about -9.4 × 10)⁸~-1.3×10⁹(Dyne / cm²)) Remained.

【0073】

From these results, the peeling phenomenon is related to the adhesion due to various factors, but especially deeply related to the internal stress, and when the oxide layer is formed on the nitride layer or the metal layer, the nitride layer or It can be read that the layer to be peeled off can be peeled off from the interface between the metal layer and the oxide layer over the entire surface.

【0074】

(Experiment 4) The following experiment was conducted to investigate the dependence of heating temperature.

【0075】

As a sample, a W film (tungsten film) is formed on a glass substrate using a sputtering method with a film thickness of 50 nm, and then a sputtering method (using a silicon target, argon gas flow rate 10 sccm, oxygen gas flow rate 30 sccm, film formation). A silicon oxide film having a film thickness of 200 nm was formed using a pressure of 0.4 Pa, a sputtering power of 3 kW, and a substrate temperature of 300 ° C.). Next, the underlying insulating layer (silicon oxide film 50 nm and silicon oxide film 100 nm) and the amorphous silicon film are formed with a thickness of 54 nm by the plasma CVD method in the same manner as in Experiment 1.

【0076】

Next, after heat treatment is performed under the conditions of heating temperature, the quartz substrate is attached to the surface of the amorphous silicon film (or polysilicon film) using an adhesive, and the quartz substrate and the glass substrate are separated by human hands. It was pulled so as to separate and examined whether it could be peeled off. Heating temperature condition 1 is 500 ° C, 1 hour, condition 2 is 450 ° C, 1 hour, condition 3 is 425 ° C, 1 hour, condition 4 is 410 ° C, 1 hour, condition 5 is 400 ° C. , 1 hour, condition 6 was 350 ° C, 1 hour.

【0077】

As a result of the experiment, it was possible to peel off with the sample of conditions 1 to 4, but it was not possible to peel off with the samples of conditions 5 and 6. Therefore, in the peeling method of the present invention, it is preferable to perform heat treatment at least 410 ° C. or higher. The temperature of 410 ° C or higher is the temperature at which hydrogen is released from the membrane or diffused into the membrane.

【0078】

Further, when the W film was peeled off, the entire surface of the W film remained on the glass substrate, and it was laminated on the quartz substrate (SiO by the splatter method).₂The film, the insulating film (1) and (2) by the PCVD method, and the amorphous silicon film) are transferred. Transferred SiO₂The result of measuring the film surface by TXRF is shown in Fig. 21, and the surface roughness Rz (30 points) was 5.44 nm when measured by AFM. In addition, the result of measuring the surface of the W film of 50 nm formed on the quartz substrate as a reference by TXRF is shown in FIG. 22, and the surface roughness Rz (30 points) was 22.8 nm when measured by AFM. Further, FIG. 23 shows the result of measuring only the quartz substrate by TXRF. Comparing FIG. 21 and FIG. 22, it has a similar peak of W (tungsten), so that the transferred SiO₂It can be seen that a minute metal material (W in this case) is attached to the film surface.

【0079】

In the configuration of the present invention disclosed herein, the peeled layer bonded to the support with an adhesive has a silicon oxide film, and a trace amount of metal material is provided between the silicon oxide film and the adhesive. It is a semiconductor device.

【0080】

In the above configuration, the metal material was selected from W, Ti, Al, Ta, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir, Pt. It is characterized by being an element, or an alloy material or a compound material containing the element as a main component.

【0081】

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be described below.

【0082】

(Embodiment 1) A typical peeling procedure using the present invention is briefly shown below with reference to FIG.

【0083】

In FIG. 1 (A), 10 is a substrate, 11 is a nitride layer or a metal layer, 12 is an oxide layer, and 13 is a layer to be peeled off.

【0084】

In FIG. 1A, a glass substrate, a quartz substrate, a ceramic substrate, or the like can be used as the substrate 10. Further, a silicon substrate, a metal substrate or a stainless steel substrate may be used.

【0085】

First, as shown in FIG. 1A, a nitride layer or a metal layer 11 is formed on the substrate 10. Typical examples of the nitride layer or metal layer 11 are Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir, An element selected from Pt, or a single layer composed of an alloy material or compound material containing the element as a main component, or a laminate thereof, or these nitrides, for example, titanium nitride, tungsten nitride, tantalum nitride, molybdenum nitride. A single layer composed of, or a laminate thereof may be used.

【0086】

Next, the oxide layer 12 is formed on the nitride layer or the metal layer 11. As a typical example, silicon oxide, silicon oxide nitride, or a metal oxide material may be used as the oxide layer 12. The oxide layer 12 may be formed by any film forming method such as a sputtering method, a plasma CVD method, or a coating method.

【0087】

In the present invention, it is important to make the film stress of the oxide layer 12 different from the film stress of the nitride layer or the metal layer 11. Each film thickness may be appropriately set in the range of 1 nm to 1000 nm, and each film stress may be adjusted. Further, in FIG. 1, in order to simplify the process, an example in which the nitride layer or the metal layer 11 is formed in contact with the substrate 10 is shown, but insulation is provided between the substrate 10 and the nitride layer or the metal layer 11. A layer or a metal layer may be provided to improve the adhesion to the substrate 10.

【0088】

Next, the peeled layer 13 is formed on the oxide layer 12. (FIG. 1 (A)) The peeled layer 13 may be a layer including various elements represented by TFT (thin film diode, photoelectric conversion element composed of PIN junction of silicon, silicon resistance element). Further, the heat treatment within the range that the substrate 10 can withstand can be performed. In the present invention, even if the film stress of the oxide layer 12 and the film stress of the nitride layer or the metal layer 11 are different, the film peeling does not occur due to the heat treatment in the manufacturing process of the layer to be peeled 13.

【0089】

Next, the substrate 10 provided with the nitride layer or the metal layer 11 is peeled off by physical means. (Fig. 1 (B)) Since the film stress of the oxide layer 12 and the film stress of the nitride layer or the metal layer 11 are different, they can be peeled off with a relatively small force. Further, here, an example assuming that the mechanical strength of the peeled layer 13 is sufficient is shown, but when the mechanical strength of the peeled layer 13 is insufficient, the peeled layer 13 is fixed. It is preferable that the support (not shown) is attached and then peeled off.

【0090】

In this way, the peelable layer 13 formed on the oxide layer 12 can be separated from the substrate 10. The state after peeling is shown in Fig. 1 (C).

【0091】

In the experiment, even if the metal layer 11 was a tungsten film of 10 nm and the oxide layer 12 was a silicon oxide film of 200 nm by the splatter method, peeling could be confirmed by the peeling method of the present invention, and the metal layer 11 was oxidized to a tungsten film of 50 nm. Even if the material layer 12 is a silicon oxide film of 100 nm by the splatter method, peeling can be confirmed by the peeling method of the present invention. Further, even if the metal layer 11 is a tungsten film of 50 nm and the oxide layer 12 is a silicon oxide film of 400 nm by the splatter method, peeling has been confirmed by the peeling method of the present invention.

【0092】

Further, after peeling, the peeled layer 13 to be peeled off may be attached to a transfer body (not shown).

【0093】

Further, the present invention can be used in various methods for manufacturing semiconductor devices. In particular, weight reduction can be achieved by using a plastic substrate for the transfer body and the support.

【0094】

When the liquid crystal display device is manufactured, the support may be adhered to the layer to be peeled by using the support as an opposing substrate and the sealing material as an adhesive. In this case, the element provided in the peeled layer has a pixel electrode, and a liquid crystal material is filled between the pixel electrode and the facing substrate. Further, the order in which the liquid crystal display device is manufactured is not particularly limited, and an opposing substrate as a support may be attached, and after injecting the liquid crystal, the substrate may be peeled off and a plastic substrate as a transfer body may be attached. After forming the pixel electrode, the substrate may be peeled off, a plastic substrate as the first transfer body may be attached, and then an opposing substrate as the second transfer body may be attached.

【0095】

Further, when manufacturing a light emitting device represented by a light emitting device having an EL element, a support is used as a sealing material to prevent substances that promote deterioration of the organic compound layer such as moisture and oxygen from entering from the outside. It is preferable to completely block the light emitting element from the outside. Further, when manufacturing a light emitting device represented by a light emitting device having an EL element, not only the support but also the transfer body is sufficiently invaded from the outside by a substance that promotes deterioration of the organic compound layer such as water and oxygen. It is preferable to prevent this. Further, the order in which the light emitting device is manufactured is not particularly limited, and after forming the light emitting element, a plastic substrate as a support may be attached, the substrate may be peeled off, and a plastic substrate as a transfer body may be attached. After forming the light emitting element, the substrate may be peeled off, the plastic substrate as the first transfer body may be attached, and then the plastic substrate as the second transfer body may be attached.

【0096】

(Embodiment 2) In the present embodiment, a base insulating layer in contact with the layer to be peeled is provided to prevent the diffusion of impurities from the nitride layer or the metal layer or the substrate, and the peeling procedure for peeling the substrate is simplified. It is shown with reference to FIG.

【0097】

In FIG. 2 (A), 20 is a substrate, 21 is a nitride layer or a metal layer, 22 is an oxide layer, 23a and 23b are base insulating layers, and 24 is a layer to be peeled off.

【0098】

In FIG. 2A, a glass substrate, a quartz substrate, a ceramic substrate, or the like can be used as the substrate 20. Further, a silicon substrate, a metal substrate or a stainless steel substrate may be used.

【0099】

First, as shown in FIG. 2A, a nitride layer or a metal layer 21 is formed on the substrate 20. Typical examples of the nitride layer or metal layer 21 are Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir, An element selected from Pt, or a single layer composed of an alloy material or compound material containing the element as a main component, or a laminate thereof, or these nitrides, for example, titanium nitride, tungsten nitride, tantalum nitride, molybdenum nitride. A single layer composed of, or a laminate thereof may be used.

【0100】

Next, the oxide layer 22 is formed on the nitride layer or the metal layer 21. As a typical example, silicon oxide, silicon oxide nitride, or a metal oxide material may be used as the oxide layer 22. The oxide layer 22 may be formed by any film forming method such as a sputtering method, a plasma CVD method, or a coating method.

【0101】

In the present invention, it is important to make the film stress of the oxide layer 22 different from the film stress of the nitride layer or the metal layer 21. Each film thickness may be appropriately set in the range of 1 nm to 1000 nm, and each film stress may be adjusted. Further, in FIG. 2, in order to simplify the process, an example in which the nitride layer or the metal layer 21 is formed in contact with the substrate 20 is shown, but insulation is provided between the substrate 20 and the nitride layer or the metal layer 21. A layer or a metal layer may be provided to improve the adhesion to the substrate 20.

【0102】

Next, the underlying insulating layers 23a and 23b are formed on the oxide layer 22. Here, the plasma CVD method is used to form a film at a temperature of 400 ° C and the raw material gas SiH.₄, NH₃, N₂A silicon oxynitride film 23a (composition ratio Si = 32%, O = 27%, N = 24%, H = 17%) made from O is formed at 50 nm (preferably 10 to 200 nm), and further by plasma CVD method. Film formation temperature 400 ° C, raw material gas SiH₄, N₂A silicon oxynitride film 23b (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) made from O was laminated to a thickness of 100 nm (preferably 50 to 200 nm). It is not particularly limited, and may be a single layer or a stack of three or more layers.

【0103】

Next, the layer to be peeled 24 is formed on the base insulating layer 23b. (Fig. 2 (A)) [0104]

When such two layers of the underlying insulating layers 23a and 23b are used, it is possible to prevent the diffusion of impurities from the nitride layer or the metal layer 21 and the substrate 20 in the process of forming the layer to be peeled 24. Further, the adhesion between the oxide layer 22 and the peeled layer 24 can be improved by the underlying insulating layers 23a and 23b.

【0105】

Further, when irregularities are formed on the surface by the nitride layer, the metal layer 21, or the oxide layer 22, the surface may be flattened before and after forming the underlying insulating layer. Flattening is preferable because the coverage of the layer 24 to be peeled is improved and the characteristics of the device are easily stabilized when the layer 24 to be peeled including the element is formed. As the flattening treatment, an etchback method, a mechanical chemical polishing method (CMP method), or the like may be used, in which a coating film (resist film or the like) is formed and then etched to flatten the coating film.

【0106】

Next, the substrate 20 provided with the nitride layer or the metal layer 21 is peeled off by physical means. (Fig. 2 (B)) Since the film stress of the oxide layer 22 and the film stress of the nitride layer or the metal layer 21 are different, they can be peeled off with a relatively small force. Further, here, an example is shown in which it is assumed that the mechanical strength of the peelable layer 24 is sufficient, but when the mechanical strength of the peelable layer 24 is insufficient, the peelable layer 24 is fixed. It is preferable that the support (not shown) is attached and then peeled off.

【0107】

In this way, the peelable layer 24 formed on the underlying insulating layer 22 can be separated from the substrate 20. The state after peeling is shown in Fig. 2 (C).

【0108】

Further, after peeling, the peeled layer 24 to be peeled off may be attached to a transfer body (not shown).

【0109】

Further, the present invention can be used in various methods for manufacturing semiconductor devices. In particular, weight reduction can be achieved by using a plastic substrate for the transfer body and the support.

【0110】

When the liquid crystal display device is manufactured, the support may be adhered to the layer to be peeled by using the support as an opposing substrate and the sealing material as an adhesive. In this case, the element provided in the peeled layer has a pixel electrode, and a liquid crystal material is filled between the pixel electrode and the facing substrate. Further, the order in which the liquid crystal display device is manufactured is not particularly limited, and an opposing substrate as a support may be attached, and after injecting the liquid crystal, the substrate may be peeled off and a plastic substrate as a transfer body may be attached. After forming the pixel electrode, the substrate may be peeled off, a plastic substrate as the first transfer body may be attached, and then an opposing substrate as the second transfer body may be attached.

【0111】

Further, when manufacturing a light emitting device represented by a light emitting device having an EL element, a support is used as a sealing material to prevent substances that promote deterioration of the organic compound layer such as moisture and oxygen from entering from the outside. It is preferable to completely block the light emitting element from the outside. Further, when manufacturing a light emitting device represented by a light emitting device having an EL element, not only the support but also the transfer body is sufficiently invaded from the outside by a substance that promotes deterioration of the organic compound layer such as water and oxygen. It is preferable to prevent this. Further, the order in which the light emitting device is manufactured is not particularly limited, and after forming the light emitting element, a plastic substrate as a support may be attached, the substrate may be peeled off, and a plastic substrate as a transfer body may be attached. After forming the light emitting element, the substrate may be peeled off, the plastic substrate as the first transfer body may be attached, and then the plastic substrate as the second transfer body may be attached.

【0112】

(Embodiment 3) In the present embodiment, in addition to the first embodiment, an example in which laser light irradiation or heat treatment is performed in order to further promote peeling is shown in FIG.

【0113】

In FIG. 4 (A), 40 is a substrate, 41 is a nitride layer or a metal layer, 42 is an oxide layer, and 43 is a layer to be peeled off.

【0114】

Since the step of forming the layer to be peeled 43 is the same as that of the first embodiment, it is omitted.

【0115】

After forming the layer to be peeled 43, laser light irradiation is performed. (Fig. 3 (A)) Laser light includes gas lasers such as excimer lasers and YVO.₄A solid-state laser such as a laser or a YAG laser, or a semiconductor laser may be used. The form of laser oscillation may be continuous oscillation or pulse oscillation, and the shape of the laser beam may be linear, rectangular, circular, or elliptical. The wavelength used may be any of the fundamental wave, the second harmonic, and the third harmonic.

【0116】

Further, as the material used as the nitride layer or the metal layer 41, it is desirable to use a material that easily absorbs laser light, and titanium nitride is preferable. In order to allow the laser light to pass through, the substrate 40 uses a transparent substrate.

【0117】

Next, the substrate 40 provided with the nitride layer or the metal layer 41 is peeled off by physical means. (Fig. 4 (B)) Since the film stress of the oxide layer 42 and the film stress of the nitride layer or the metal layer 41 are different, they can be peeled off with a relatively small force.

【0118】

By irradiating the laser beam to heat the interface between the nitride layer or the metal layer 41 and the oxide layer 42, the mutual film stress can be changed to promote the peeling, and the peeling can be promoted with a smaller force. It can be peeled off. Further, here, an example assuming that the mechanical strength of the peelable layer 43 is sufficient is shown, but when the mechanical strength of the peelable layer 43 is insufficient, the peelable layer 43 is fixed. It is preferable that the support (not shown) is attached and then peeled off.

【0119】

In this way, the peelable layer 43 formed on the oxide layer 42 can be separated from the substrate 40. The state after peeling is shown in Fig. 4 (C).

【0120】

Further, the light is not limited to laser light, and visible light, infrared rays, ultraviolet rays, microwaves, etc. from a light source such as a halogen lamp may be used.

【0121】

Further, instead of the laser light, heat treatment in an electric furnace may be used.

【0122】

Further, a treatment of heat treatment or irradiation with laser light may be performed before the support is adhered or peeled off by the physical means.

【0123】

Further, the present embodiment can be combined with the second embodiment.

【0124】

(Embodiment 4) In the present embodiment, in addition to the first embodiment, an example in which a granular oxide is provided at the interface between the nitride layer or the metal layer and the oxide layer in order to further promote peeling. Figure 5 shows.

【0125】

In FIG. 5 (A), 50 is a substrate, 51 is a nitride layer or a metal layer, 52a is a granular oxide, 52b is an oxide layer, and 53 is a layer to be peeled off.

【0126】

The step of forming the nitride layer or the metal layer 51 is the same as that of the first embodiment, and is therefore omitted.

【0127】

After forming the nitride layer or the metal layer 51, a granular oxide 52a is formed. Granular oxides 52a include metal oxide materials such as ITO (indium tin oxide alloy) and indium zinc oxide alloy (In).₂O₃-ZnO), zinc oxide (ZnO), etc. may be used.

【0128】

Next, the oxide layer 52b is formed by covering the granular oxide 52a. As a typical example, silicon oxide, silicon nitride nitride, or a metal oxide material may be used as the oxide layer 52b. The oxide layer 23b may be formed by any film forming method such as a sputtering method, a plasma CVD method, or a coating method.

【0129】

Next, the layer to be peeled 53 is formed on the oxide layer 52b. (Fig. 5 (A)) [0130]

Next, the substrate 50 provided with the nitride layer or the metal layer 51 is peeled off by physical means. (Fig. 5 (B)) Since the film stress of the oxide layer 52 and the film stress of the nitride layer or the metal layer 51 are different, they can be peeled off with a relatively small force.

【0131】

By providing the granular oxide 52b, the bonding force between the nitride layer or the metal layer 51 and the oxide layer 52 can be weakened, the adhesion to each other can be changed, and peeling can be promoted, and with a smaller force. It can be peeled off. Further, here, an example assuming that the mechanical strength of the peelable layer 53 is sufficient is shown, but when the mechanical strength of the peelable layer 53 is insufficient, the peelable layer 53 is fixed. It is preferable that the support (not shown) is attached and then peeled off.

【0132】

In this way, the peelable layer 53 formed on the oxide layer 52b can be separated from the substrate 50. The state after peeling is shown in Fig. 5 (C).

【0133】

Further, the present embodiment can be combined with the second embodiment or the third embodiment.

【0134】

The present invention having the above configuration will be described in more detail with reference to the following examples.

【0135】

(Example) [Example 1] Examples of the present invention will be described with reference to FIGS. 6 to 8. Here, a method of simultaneously producing a pixel portion and a TFT (n-channel type TFT and p-channel type TFT) of a drive circuit provided around the pixel portion on the same substrate will be described in detail.

【0136】

First, a nitride layer or a metal layer 101, an oxide layer 102, and an underlying insulating film 103 are formed on the substrate 100 to obtain a semiconductor film having a crystal structure, which is then etched into a desired shape and separated into islands. The formed semiconductor layers 104 to 108 are formed.

【0137】

A glass substrate (# 1737) is used as the substrate 100.

【0138】

The metal layer 101 is an element selected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir, and Pt. , Or a single layer made of an alloy material or a compound material containing the element as a main component, or a laminate thereof may be used. More preferably, these nitrides, for example, a single layer composed of titanium nitride, tungsten nitride, tantalum nitride, molybdenum nitride, or a laminate thereof may be used. Here, a titanium nitride film having a film thickness of 100 nm is used by the sputtering method.

【0139】

Further, as the oxide layer 102, a single layer made of a silicon oxide material or a metal oxide material, or a laminate thereof may be used. Here, a silicon oxide film having a film thickness of 200 nm is used by the sputtering method. The bonding force between the metal layer 101 and the oxide layer 102 is strong in heat treatment, and film peeling (also called peeling) does not occur, but it can be easily peeled off in the oxide layer or at the interface by physical means. Can be done.

【0140】

The underlying insulating film 103 is a raw material gas SiH with a film formation temperature of 400 ° C by the plasma CVD method.₄, NH₃, N₂A silicon oxide nitride film 103a (composition ratio Si = 32%, O = 27%, N = 24%, H = 17%) made from O is formed at 50 nm (preferably 10 to 200 nm). Then, after washing the surface with ozone water, the oxide film on the surface is removed with dilute hydrofluoric acid (1/100 dilution). Next, by plasma CVD method, the film formation temperature is 400 ° C, and the raw material gas SiH₄, N₂A silicon oxide nitride film 103b (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) made from O is laminated and formed to a thickness of 100 nm (preferably 50 to 200 nm). Furthermore, the film formation temperature is 300 ° C and the film formation gas is SiH by plasma CVD method without releasing to the atmosphere.₄A semiconductor film having an amorphous structure (here, an amorphous silicon film) is formed with a thickness of 54 nm (preferably 25 to 80 nm).

【0141】

In this embodiment, the base film 103 is shown as a two-layer structure, but it may be formed as a single-layer film of the insulating film or a structure in which two or more layers are laminated. The material of the semiconductor film is not limited, but is preferably silicon or silicon germanium (Si)._XGe_1-X(X = 0.0001 to 0.02)) It may be formed by a known means (sputtering method, LPCVD method, plasma CVD method, etc.) using an alloy or the like. Further, the plasma CVD apparatus may be a single-wafer type apparatus or a batch type apparatus. Further, the underlying insulating film and the semiconductor film may be continuously formed in the same film forming chamber without being exposed to the atmosphere.

【0142】

Next, after cleaning the surface of the semiconductor film having an amorphous structure, an ultrathin oxide film of about 2 nm is formed on the surface with ozone water. A trace amount of impurity element (boron or phosphorus) is then doped to control the TFT threshold. Here, diborane (B₂H₆) Is plasma-excited without mass separation, the doping conditions are acceleration voltage 15 kV, diborane diluted to 1% with hydrogen gas flow rate 30 sccm, dose amount 2 × 10¹²/cm²Boron was added to the amorphous silicon film.

【0143】

Then, a nickel acetate solution containing 10 ppm of nickel in terms of weight is applied with a spinner. Instead of coating, a method of spraying the nickel element on the entire surface by a sputtering method may be used.

【0144】

Next, it is heat-treated and crystallized to form a semiconductor film having a crystal structure. For this heat treatment, heat treatment of an electric furnace or irradiation with strong light may be used. When the heat treatment is performed in an electric furnace, the heat treatment may be performed at 500 ° C to 650 ° C in 4 to 24 hours. Here, after the heat treatment for dehydrogenation (500 ° C, 1 hour), the heat treatment for crystallization (550 ° C, 4 hours) is performed to obtain a silicon film having a crystal structure. Although crystallization was performed here by using a heat treatment using a furnace, crystallization may be performed by a lamp annealing device. Although a crystallization technique using nickel as a metal element that promotes crystallization of silicon is used here, other known crystallization techniques such as a solid phase growth method and a laser crystallization method may be used.

【0145】

Next, after removing the oxide film on the surface of the silicon film having a crystal structure with dilute phosphoric acid or the like, the first laser beam (XeCl: wavelength 308 nm) for increasing the crystallization rate and repairing the defects left in the crystal grains. ) Is irradiated in the air or in an oxygen atmosphere. Excimer laser light with a wavelength of 400 nm or less and the second and third harmonics of the YAG laser are used as the laser light. In any case, pulsed laser light with a repetition frequency of about 10 to 1000 Hz is used, and the laser light is applied to the optical system at 100 to 500 mJ / cm.²The surface of the silicon film may be scanned by condensing the light on the surface of the silicon film and irradiating the surface with an overlap rate of 90 to 95%. Here, the repetition frequency is 30Hz and the energy density is 393mJ / cm.²The first laser beam is irradiated in the atmosphere. Since it is performed in the atmosphere or an oxygen atmosphere, an oxide film is formed on the surface by irradiation with the first laser beam.

【0146】

Next, after removing the oxide film formed by the irradiation of the first laser beam with dilute hydrofluoric acid, the second laser beam irradiation is performed in a nitrogen atmosphere or in a vacuum to flatten the surface of the semiconductor film. For this laser light (second laser light), an excimer laser light having a wavelength of 400 nm or less and the second and third harmonics of the YAG laser are used. The energy density of the second laser beam is higher than the energy density of the first laser beam, preferably 30 to 60 mJ / cm.²Enlarge. Here, the repetition frequency is 30Hz and the energy density is 453mJ / cm.²The second laser beam is irradiated at, and the PV value (Peak to Valley, difference between the maximum and minimum height values) of the unevenness on the surface of the semiconductor film becomes 50 nm or less. This PV value is obtained by AFM (Atomic Force Microscope).

【0147】

Further, in this embodiment, the second laser beam is irradiated on the entire surface, but since the reduction of the off-current is particularly effective for the TFT of the pixel portion, it can be used as a step of selectively irradiating at least the pixel portion only. Good.

【0148】

Next, the surface is treated with ozone water for 120 seconds to form a barrier layer composed of an oxide film having a total of 1 to 5 nm.

【0149】

Next, an amorphous silicon film containing an argon element to be a gettering site is formed on the barrier layer by a sputtering method with a film thickness of 150 nm. The film forming conditions by the sputtering method of this example are that the film forming pressure is 0.3 Pa, the gas (Ar) flow rate is 50 (sccm), the film forming power is 3 kW, and the substrate temperature is 150 ° C. The atomic concentration of the argon element contained in the amorphous silicon film under the above conditions is 3 × 10.²⁰/cm³~6×10²⁰/cm³, The atomic concentration of oxygen is 1 × 10¹⁹/cm³~3×10¹⁹/cm³Is. After that, heat treatment is performed at 650 ° C for 3 minutes using a lamp annealing device for gettering.

【0150】

Next, using the barrier layer as an etching stopper, the amorphous silicon film containing the argon element, which is a gettering site, is selectively removed, and then the barrier layer is selectively removed with dilute hydrofluoric acid. Since nickel tends to move to a region having a high oxygen concentration during gettering, it is desirable to remove the barrier layer made of an oxide film after gettering.

【0151】

Next, after forming a thin oxide film with ozone water on the surface of the obtained silicon film having a crystal structure (also called a polysilicon film), a mask made of a resist is formed and etched into a desired shape to form an island shape. The semiconductor layers 104 to 108 separated from each other are formed. After forming the semiconductor layer, the mask made of resist is removed.

【0152】

Next, the oxide film is removed with an etchant containing hydrofluoric acid, and at the same time, the surface of the silicon film is washed, and then an insulating film containing silicon as a main component to be the gate insulating film 109 is formed. In this example, it is formed of a silicon oxide nitride film (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) with a thickness of 115 nm by the plasma CVD method.

【0153】

Next, as shown in FIG. 6A, a first conductive film 110a having a film thickness of 20 to 100 nm and a second conductive film 110b having a film thickness of 100 to 400 nm are laminated and formed on the gate insulating film 109. In this embodiment, a tantalum nitride film having a film thickness of 50 nm and a tungsten film having a film thickness of 370 nm are sequentially laminated on the gate insulating film 109.

【0154】

The conductive material forming the first conductive film and the second conductive film is an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy material or compound material containing the element as a main component. Form. Further, as the first conductive film and the second conductive film, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used. Further, the structure is not limited to the two-layer structure, for example, as a three-layer structure in which a tungsten film having a thickness of 50 nm, an alloy (Al-Si) film of aluminum and silicon having a thickness of 500 nm, and a titanium nitride film having a thickness of 30 nm are sequentially laminated. May be good. Further, in the case of a three-layer structure, titanium nitride may be used instead of the titanium of the first conductive film, or aluminum may be used instead of the aluminum-silicon alloy (Al-Si) film of the second conductive film. A titanium alloy film (Al-Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film. Moreover, it may have a single layer structure.

【0155】

Next, as shown in FIG. 6B, masks 112 to 117 made of resist are formed by a light exposure step, and a first etching process for forming a gate electrode and wiring is performed. The first etching process is performed under the first and second etching conditions. ICP (Inductively Coupled Plasma) etching method may be used for etching. Using the ICP etching method, the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the electrode on the substrate side, the electrode temperature on the substrate side, etc.) are appropriately adjusted to form a film with a desired tapered shape. Can be etched. The etching gas is Cl.₂, BCl₃, SiCl₄, CCl₄Chlorine-based gas or CF represented by₄,SCIENCE FICTION₆, NF₃Fluorine-based gas represented by, or O₂Can be used as appropriate.

【0156】

In this embodiment, 150 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. The electrode area size on the substrate side is 12.5 cm × 12.5 cm, and the coil-type electrode area size (here, a quartz disk provided with a coil) is a disk having a diameter of 25 cm. The W film is etched under the first etching condition to form a tapered end portion of the first conductive layer. The etching rate with respect to W under the first etching condition is 200.39 nm / min, the etching rate with respect to TaN is 80.32 nm / min, and the selection ratio of W with respect to TaN is about 2.5. Further, due to this first etching condition, the taper angle of W becomes about 26 °. After that, the masks 112 to 117 made of resist were changed to the second etching condition without being removed, and CF was used as the etching gas.₄And Cl₂With, each gas flow rate ratio is set to 30/30 (sccm), and 500W RF (13.56MHz) power is applied to the coil type electrode at a pressure of 1Pa to generate plasma and etch for about 30 seconds. Was done. 20W RF (13.56MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. CF₄And Cl₂Under the second etching condition in which the above is mixed, both the W film and the TaN film are etched to the same extent. Under the second etching condition, the etching rate for W is 58.97 nm / min, and the etching rate for TaN is 66.43 nm / min. In order to etch without leaving a residue on the gate insulating film, it is advisable to increase the etching time at a rate of about 10 to 20%.

【0157】

In the first etching process, the shape of the mask made of resist is made suitable, and the ends of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. It becomes. The angle of this tapered portion may be 15 to 45 °.

【0158】

In this way, the first conductive layer 119 to 123 (the first conductive layer 119a to 123a and the second conductive layer 119b to 123b) composed of the first conductive layer and the second conductive layer by the first etching process. To form. The insulating film 109 to be the gate insulating film is etched to about 10 to 20 nm, and becomes a gate insulating film 118 in which the region not covered by the conductive layers 119 to 123 of the first shape is thinned.

【0159】

Next, a second etching process is performed without removing the mask made of resist. Here, SF for etching gas₆And Cl₂And O₂With, each gas flow rate ratio is set to 24/12/24 (sccm), and 700W RF (13.56MHz) power is applied to the coil type electrode at a pressure of 1.3Pa to generate plasma and perform etching 25. I went for a second. 10W RF (13.56MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. The etching rate for W in the second etching process is 227.3 nm / min, the etching rate for TaN is 32.1 nm / min, the selectivity of W for TaN is 7.1, and the etching rate for SiON, which is the insulating film 118, is It is 33.7 nm / min, and the selectivity of W to SiON is 6.83. In this way, SF for etching gas₆When is used, the selective ratio with the insulating film 118 is high, so that film loss can be suppressed. In this embodiment, the insulating film 118 is reduced by only about 8 nm.

【0160】

By this second etching process, the taper angle of W became 70 °. The second conductive layers 126b to 131b are formed by this second etching process. On the other hand, the first conductive layer is hardly etched and becomes the first conductive layers 126a to 131a. The first conductive layers 126a to 131a have substantially the same size as the first conductive layers 119a to 124a. Actually, the width of the first conductive layer is about 0.3 μm as compared with that before the second etching treatment, that is, the entire line width may be set back by about 0.6 μm, but there is almost no change in size.

【0161】

In addition, instead of the two-layer structure, a three-layer structure in which a tungsten film having a thickness of 50 nm, an alloy (Al-Si) film of aluminum and silicon having a thickness of 500 nm, and a titanium nitride film having a thickness of 30 nm are sequentially laminated is used. The first etching condition of the first etching process is BCl.₃And Cl₂And O₂Is used as the raw material gas, each gas flow ratio is 65/10/5 (sccm), 300W RF (13.56MHz) power is applied to the substrate side (sample stage), and a coil type with a pressure of 1.2Pa. It is sufficient to apply 450 W RF (13.56 MHz) power to the electrodes to generate plasma and perform etching for 117 seconds. As the second etching condition of the first etching process, CF₄And Cl₂And O₂With, each gas flow ratio is set to 25/25/10 (sccm), 20W RF (13.56MHz) power is also applied to the substrate side (sample stage), and 500W is applied to the coil type electrode at a pressure of 1Pa. RF (13.56MHz) power is applied to generate plasma and etching is performed for about 30 seconds. The second etching process is BCl.₃And Cl₂Each gas flow ratio is 20/60 (sccm), 100W RF (13.56MHz) power is applied to the substrate side (sample stage), and 600W RF is applied to the coil type electrode at a pressure of 1.2Pa. (13.56MHz) Power may be applied to generate plasma for etching.

【0162】

Next, after removing the mask made of resist, the first doping treatment is performed to obtain the state shown in FIG. 6 (D). The doping treatment may be carried out by an ion doping method or an ion implantation method. The condition of the ion doping method is that the dose amount is 1.5 × 10.¹⁴atoms / cm²Then, the acceleration voltage is set to 60 to 100 keV. Phosphorus (P) or arsenic (As) is typically used as the impurity element that imparts n-type. In this case, the first conductive layer and the second conductive layers 126 to 130 serve as masks for the impurity elements that impart the n-type, and the first impurity regions 132 to 136 are formed in a self-aligned manner. 1 × 10 in the first impurity region 132-136¹⁶~1×10¹⁷/cm³Add an impurity element that imparts n-type in the concentration range of. Here, n is the region of the same concentration range as the first impurity region.^--Also called an area.

【0163】

In this embodiment, the first doping treatment was performed after removing the mask made of resist, but the first doping treatment may be performed without removing the mask made of resist.

【0164】

Next, as shown in FIG. 7A, masks 137 to 139 made of resist are formed and a second doping treatment is performed. Mask 137 is a mask that protects the channel formation region of the semiconductor layer that forms the p-channel TFT of the drive circuit and the surrounding region, and mask 138 is the mask of the semiconductor layer that forms one of the n-channel TFTs of the drive circuit. It is a mask that protects the channel forming region and the peripheral region thereof, and the mask 139 is a mask that protects the channel forming region of the semiconductor layer forming the TFT of the pixel portion, the peripheral region thereof, and the region serving as the holding capacitance.

【0165】

The condition of the ion doping method in the second doping treatment is that the dose amount is 1.5 × 10.¹⁵atoms / cm²Then, the acceleration voltage is set to 60 to 100 keV and phosphorus (P) is doped. Here, the impurity regions are self-aligned in each semiconductor layer with the second conductive layers 126b to 128b as masks. Of course, it is not added to the area covered by masks 137 to 139. In this way, the second impurity region 140 to 142 and the third impurity region 144 are formed. 1 × 10 in the second impurity region 140-142²⁰~1×10²¹/cm³An impurity element that imparts n-type is added in the concentration range of. Here, n is the region of the same concentration range as the second impurity region.⁺Also called an area.

【0166】

Further, the third impurity region is formed by the first conductive layer at a lower concentration than the second impurity region, and is 1 × 10¹⁸~1×10¹⁹/cm³Impurity elements that impart n-type are added in the concentration range of. Since the third impurity region is doped by passing through the tapered first conductive layer portion, the third impurity region has a concentration gradient in which the impurity concentration increases toward the end of the tapered portion. .. Here, n is the region of the same concentration range as the third impurity region.^-Also called an area. Further, the regions covered with the masks 138 and 139 become the first impurity regions 146 and 147 without the addition of impurity elements in the second doping treatment.

【0167】

Next, after removing the masks 137 to 139 made of resist, masks 148 to 150 made of resist are newly formed, and a third doping treatment is performed as shown in FIG. 7 (B).

【0168】

In the drive circuit, a fourth impurity region 151 in which an impurity element that imparts a p-type conductive type is added to the semiconductor layer that forms the p-channel type TFT and the semiconductor layer that forms the holding capacity by the third doping treatment. , 152 and the fifth impurity regions 153, 154.

【0169】

In addition, 1 × 10 in the fourth impurity regions 151 and 152.²⁰~1×10²¹/cm³Impurity elements that impart p-type are added in the concentration range of. The fourth impurity regions 151 and 152 are regions (n) to which phosphorus (P) was added in the previous step.^--(Region), the concentration of the impurity element that imparts p-type is 1.5 to 3 times that, and the conductive type is p-type. Here, p the region of the same concentration range as the fourth impurity region.⁺Also called an area.

【0170】

The fifth impurity regions 153 and 154 are formed in regions that overlap the tapered portion of the second conductive layer 127a, and are 1 × 10.¹⁸~1×10²⁰/cm³Impurity elements that impart p-type are added in the concentration range of. Here, p the region of the same concentration range as the fifth impurity region.^-Also called an area.

【0171】

In the steps up to the above, an impurity region having an n-type or p-type conductive type is formed in each semiconductor layer. The conductive layers 126 to 129 serve as TFT gate electrodes. Further, the conductive layer 130 serves as one electrode that forms a holding capacity in the pixel portion. Further, the conductive layer 131 forms a source wiring in the pixel portion.

【0172】

Next, an insulating film (not shown) that covers almost the entire surface is formed. In this example, a silicon oxide film having a film thickness of 50 nm was formed by the plasma CVD method. Of course, this insulating film is not limited to the silicon oxide film, and an insulating film containing other silicon may be used as a single layer or a laminated structure.

【0173】

Next, a step of activating the impurity elements added to each semiconductor layer is performed. This activation step is performed by a rapid thermal annealing method (RTA method) using a lamp light source, a method of irradiating a YAG laser or an excimer laser from the back surface, a heat treatment using a furnace, or a combination of these methods. It is done by the method.

【0174】

Further, in this embodiment, an example in which the insulating film is formed before the activation is shown, but the step may be a step of forming the insulating film after the activation.

【0175】

Next, a first interlayer insulating film 155 made of a silicon nitride film is formed and heat-treated (heat treatment at 300 to 550 ° C. for 1 to 12 hours) to hydrogenate the semiconductor layer. (Fig. 7 (C)) This step is a step of terminating the dangling bond of the semiconductor layer with hydrogen contained in the first interlayer insulating film 155. The semiconductor layer can be hydrogenated regardless of the presence of an insulating film (not shown) made of a silicon oxide film. However, in this embodiment, since a material containing aluminum as a main component is used as the second conductive layer, it is important to set the heat treatment conditions that the second conductive layer can withstand in the hydrogenation step. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed.

【0176】

Next, a second interlayer insulating film 156 made of an organic insulating material is formed on the first interlayer insulating film 155. In this example, an acrylic resin film having a film thickness of 1.6 μm is formed. Next, a contact hole reaching the source wiring 131, a contact hole reaching the conductive layers 129 and 130, and a contact hole reaching each impurity region are formed. In this embodiment, a plurality of etching processes are sequentially performed. In this embodiment, the first interlayer insulating film is used as an etching stopper to etch the second interlayer insulating film, and then the insulating film (not shown) is used as an etching stopper to etch the first interlayer insulating film and then the insulating film (not shown). Not) etched.

【0177】

After that, wiring and pixel electrodes are formed using Al, Ti, Mo, W and the like. As the material of these electrodes and pixel electrodes, it is desirable to use a material having excellent reflectivity such as a film containing Al or Ag as a main component or a laminated film thereof. In this way, the source electrode or drain electrode 157 to 162, the gate wiring 164, the connection wiring 163, and the pixel electrode 165 are formed.

【0178】

As described above, the drive circuit 206 having the n-channel type TFT201, the p-channel type TFT202, and the n-channel type TFT203, and the pixel portion 207 having the pixel TFT204 composed of the n-channel type TFT and the holding capacity 205 are placed on the same substrate. Can be formed. (Fig. 8) In the present specification, such a substrate is referred to as an active matrix substrate for convenience.

【0179】

In the pixel portion 207, the pixel TFT 204 (n-channel type TFT) has a channel forming region 169 and a first impurity region (n) formed outside the conductive layer 129 forming the gate electrode.^--Region) 147 and a second impurity region (n) that acts as a source or drain region⁺Areas) 142, 171. Further, a fourth impurity region 152 and a fifth impurity region 154 are formed in the semiconductor layer that functions as one electrode of the holding capacity 205. The holding capacity 205 is formed of a second electrode 130 and semiconductor layers 152, 154, and 170, using an insulating film (same film as the gate insulating film) 118 as a dielectric.

【0180】

Further, in the drive circuit 206, the n-channel type TFT 201 (first n-channel type TFT) has a channel formation region 166 and a third impurity region (a third impurity region) that overlaps a part of the conductive layer 126 forming the gate electrode via an insulating film. n^-Region) 144 and a second impurity region (n) that acts as a source or drain region⁺Area) has 140.

【0181】

Further, in the drive circuit 206, the p-channel type TFT 202 has a channel formation region 167 and a fifth impurity region (p) that overlaps a part of the conductive layer 127 forming the gate electrode via an insulating film.^-Region) 153 and a fourth impurity region (p) that acts as a source or drain region⁺Area) 151.

【0182】

Further, in the drive circuit 206, the n-channel TFT 203 (second n-channel TFT) has a channel forming region 168, and the first impurity region (n) outside the conductive layer 128 forming the gate electrode.^--Region) 146 and a second impurity region (n) that acts as a source or drain region⁺Region) 141.

【0183】

These TFTs 201 to 203 may be appropriately combined to form a shift register circuit, a buffer circuit, a level shifter circuit, a latch circuit, and the like to form a drive circuit 206. For example, when forming a CMOS circuit, the n-channel type TFT201 and the p-channel type TFT202 may be complementarily connected to form the CMOS circuit.

【0184】

In particular, for a buffer circuit having a high drive voltage, the structure of n-channel TFT 203 is suitable for the purpose of preventing deterioration due to hot carrier effect.

【0185】

In addition, the n-channel TFT201 structure, which is a GOLD structure, is suitable for circuits where reliability is the highest priority.

【0186】

Further, since the reliability can be improved by improving the flatness of the semiconductor film surface, it is sufficient to reduce the area of the impurity region overlapping between the gate electrode and the gate insulating film in the TFT of the GOLD structure. Reliability can be obtained. Specifically, in a TFT having a GOLD structure, sufficient reliability can be obtained even if the size of the tapered portion of the gate electrode is reduced.

【0187】

In addition, in a TFT with a GOLD structure, the parasitic capacitance increases as the gate insulating film becomes thinner, but if the size of the tapered portion of the gate electrode (first conductive layer) is reduced to reduce the parasitic capacitance, the f characteristic ( The frequency characteristics) will also be improved, enabling even higher speed operation, and the TFT will have sufficient reliability.

【0188】

Also in the pixel TFT of the pixel unit 207, the off-current can be reduced and the variation can be reduced by irradiating the second laser beam.

【0189】

Further, in this embodiment, an example of producing an active matrix substrate for forming a reflective display device is shown. However, when the pixel electrodes are formed of a transparent conductive film, one photomask is added, but a transmissive display is used. The device can be formed.

【0190】

Further, although a glass substrate is used in this embodiment, the present invention is not particularly limited, and a quartz substrate, a semiconductor substrate, a ceramics substrate, and a metal substrate can be used.

【0191】

Further, after obtaining the state of FIG. 8, if the mechanical strength of the layer containing the TFT (layer to be peeled off) provided on the oxide layer 102 is sufficient, the substrate 100 may be peeled off. In this embodiment, since the mechanical strength of the layer to be peeled is insufficient, it is preferable to attach a support (not shown) for fixing the layer to be peeled and then peel it.

【0192】

[Example 2] In this embodiment, a step of peeling the substrate 100 from the active matrix substrate produced in Example 1 and laminating the plastic substrate to form an active matrix type liquid crystal display device will be described below. FIG. 9 is used for the explanation.

【0193】

In FIG. 9A, 400 is a substrate, 401 is a nitride layer or a metal layer, 402 is an oxide layer, 403 is an underlying insulating layer, 404a is an element of a drive circuit 413, and 404b is an element 404b, 405 of the pixel portion 414. Is a pixel electrode. Here, the element refers to a semiconductor element (typically a TFT) or an MIM element used as a pixel switching element in an active matrix type liquid crystal display device. The active matrix substrate shown in FIG. 9 (A) is a simplified version of the active matrix substrate shown in FIG. 8, and the substrate 100 in FIG. 8 corresponds to the substrate 400 in FIG. 9 (A). There is. Similarly, 401 in FIG. 9 (A) is in 101 in FIG. 8, 402 in FIG. 9 (A) is in 102 in FIG. 8, and 403 in FIG. 9 (A) is in FIG. In 103, 404a in FIG. 9 (A) is in 201 and 202 in FIG. 8, 404b in FIG. 9 (A) is in 204 in FIG. 8, and 405 in FIG. 9 (A) is in FIG. It corresponds to 165 out of 8.

【0194】

First, according to Example 1, after obtaining the active matrix substrate in the state of FIG. 8, an alignment film 406a is formed on the active matrix substrate of FIG. 8 and a rubbing treatment is performed. In this example, before forming the alignment film, a columnar spacer (not shown) for maintaining the substrate spacing was formed at a desired position by patterning an organic resin film such as an acrylic resin film. Further, instead of the columnar spacer, a spherical spacer may be sprayed on the entire surface of the substrate.

【0195】

Next, an opposed substrate to be the support 407 is prepared. The facing substrate is provided with a color filter (not shown) in which a colored layer and a light-shielding layer are arranged corresponding to each pixel. A light-shielding layer was also provided in the drive circuit portion. A flattening film (not shown) covering the color filter and the light-shielding layer was provided. Next, a counter electrode 408 made of a transparent conductive film was formed on the flattening film in the pixel portion, an alignment film 406b was formed on the entire surface of the facing substrate, and a rubbing treatment was performed.

【0196】

Then, the pixel portion, the active matrix substrate 400 on which the drive circuit is formed, and the support 407 are bonded together with a sealing material serving as an adhesive layer 409. A filler is mixed in the sealing material, and the two substrates are bonded together at a uniform interval by the filler and the columnar spacer. Then, the liquid crystal material 410 is injected between the two substrates and completely sealed with a sealant (not shown). (FIG. 9 (B)) A known liquid crystal material may be used as the liquid crystal material 410.

【0197】

Next, the substrate 400 provided with the nitride layer or the metal layer 401 is peeled off by physical means. (Fig. 9 (C)) Since the film stress of the oxide layer 402 and the film stress of the nitride layer or the metal layer 401 are different, they can be peeled off with a relatively small force.

【0198】

Next, it is attached to the transfer body 412 by an adhesive layer 411 such as an epoxy resin. In this embodiment, the transfer body 412 is used as a plastic film substrate to reduce the weight.

【0199】

In this way, a flexible active matrix type liquid crystal display device is completed. Then, if necessary, the flexible substrate 412 or the opposing substrate is divided into a desired shape. Further, a polarizing plate (not shown) or the like was appropriately provided by using a known technique. Then, FPC (not shown) was attached using a known technique.

【0200】

[Example 3] In Example 2, an example in which an opposing substrate as a support is attached, a substrate is peeled off after injecting liquid crystal, and a plastic substrate as a transfer body is attached is shown, but in this embodiment, an example is shown. This is an example in which the active matrix substrate shown in FIG. 8 is formed, the substrate is peeled off, and the plastic substrate as the first transfer body and the plastic substrate as the second transfer body are attached. FIG. 10 is used for the explanation.

【0201】

In FIG. 10A, 500 is a substrate, 501 is a nitride layer or a metal layer, 502 is an oxide layer, 503 is an underlying insulating layer, 504a is an element of a drive circuit 514, and 504b is an element of a pixel portion 515 504b, 505. Is a pixel electrode. The active matrix substrate shown in FIG. 10 (A) is a simplified version of the active matrix substrate shown in FIG. 8, and the substrate 100 in FIG. 8 corresponds to the substrate 500 in FIG. 10 (A). There is. Similarly, 501 in FIG. 10 (A) is in 101 in FIG. 8, 502 in FIG. 10 (A) is in 102 in FIG. 8, and 503 in FIG. 10 (A) is in FIG. In 103, 504a in FIG. 10 (A) is in 201 and 202 in FIG. 8, 504b in FIG. 10 (A) is in 204 in FIG. 8, and 505 in FIG. 10 (A) is in FIG. It corresponds to 165 out of 8.

【0202】

First, according to Example 1, after obtaining the active matrix substrate in the state shown in FIG. 8, the substrate 500 provided with the nitride layer or the metal layer 501 is peeled off by physical means. (FIG. 10 (B)) Since the film stress of the oxide layer 502 and the film stress of the nitride layer or the metal layer 501 are different, they can be peeled off with a relatively small force.

【0203】

Next, it is attached to the transfer body 507 (first transfer body) by the adhesive layer 506 such as epoxy resin. In this embodiment, the transfer body 507 is used as a plastic film substrate to reduce the weight. (Fig. 10 (C)) [0204]

Next, an alignment film 508a is formed and a rubbing treatment is performed. In this example, before forming the alignment film, a columnar spacer (not shown) for maintaining the substrate spacing was formed at a desired position by patterning an organic resin film such as an acrylic resin film. Further, instead of the columnar spacer, a spherical spacer may be sprayed on the entire surface of the substrate.

【0205】

Next, a counter substrate to be the support 510 (second transfer body) is prepared. The facing substrate is provided with a color filter (not shown) in which a colored layer and a light-shielding layer are arranged corresponding to each pixel. A light-shielding layer was also provided in the drive circuit portion. A flattening film (not shown) covering the color filter and the light-shielding layer was provided. Next, a counter electrode 509 made of a transparent conductive film was formed on the flattening film in the pixel portion, an alignment film 508b was formed on the entire surface of the facing substrate, and a rubbing treatment was performed.

【0206】

Then, the plastic film substrate 507 to which the pixel portion and the drive circuit are bonded and the support 510 are bonded to each other with a sealing material serving as an adhesive layer 512. (Fig. 10 (D)) A filler is mixed in the sealing material, and the two substrates are bonded together at a uniform interval by the filler and the columnar spacer. Then, the liquid crystal material 513 is injected between the two substrates and completely sealed with a sealant (not shown). (FIG. 10 (D)) A known liquid crystal material may be used as the liquid crystal material 513.

【0207】

In this way, a flexible active matrix type liquid crystal display device is completed. Then, if necessary, the flexible substrate 507 or the opposing substrate is divided into a desired shape. Further, a polarizing plate (not shown) or the like was appropriately provided by using a known technique. Then, FPC (not shown) was attached using a known technique.

【0208】

[Example 4] The configuration of the liquid crystal module obtained in Example 2 or Example 3 will be described with reference to the top view of FIG. The substrate 412 in Example 2 or the substrate 507 in Example 3 corresponds to the substrate 301.

【0209】

A pixel portion 304 is arranged in the center of the substrate 301. A source signal line drive circuit 302 for driving the source signal line is arranged above the pixel unit 304. Gate signal line drive circuits 303 for driving the gate signal line are arranged on the left and right sides of the pixel unit 304. In the example shown in this embodiment, the gate signal line drive circuit 303 is arranged symmetrically with respect to the pixel portion, but this may be arranged only on one side, and the designer may consider the board size of the liquid crystal module and the like. May be selected as appropriate. However, considering the operational reliability and drive efficiency of the circuit, the symmetrical arrangement shown in FIG. 11 is desirable.

【0210】

The input of signals to each drive circuit is performed from the Flexible Print Circuit (FPC) 305. The FPC 305 opens contact holes in the interlayer insulating film and the resin film so as to reach the wiring arranged to a predetermined position on the substrate 301, forms the connection electrode 309, and then crimps the FPC 305 through an anisotropic conductive film or the like. Will be done. In this example, the connection electrode was formed using ITO.

【0211】

A sealant 307 was applied to the periphery of the drive circuit and the pixel portion along the outer periphery of the substrate, and a constant gap (distance between the substrate 301 and the opposing substrate 306) was maintained by the spacer 310 formed on the film substrate in advance. In this state, the facing substrate 306 is attached. After that, the liquid crystal material is injected from the portion to which the sealant 307 is not applied, and the liquid crystal material is sealed by the sealant 308. The liquid crystal module is completed by the above steps.

【0212】

Further, although an example in which all the drive circuits are formed on a film substrate is shown here, several ICs may be used as a part of the drive circuits.

【0213】

In addition, this embodiment can be freely combined with the first embodiment.

【0214】

[Example 5] In Example 1, an example of a reflective display device in which the pixel electrodes are made of a reflective metal material is shown, but in this embodiment, the pixel electrodes are formed of a translucent conductive film. An example of a transparent display device is shown.

【0215】

Since the steps up to the step of forming the interlayer insulating film are the same as those in the first embodiment, they are omitted here. After forming the TFT and the interlayer insulating film according to the first embodiment, the pixel electrode 601 made of a translucent conductive film is formed. As the conductive conductive film having translucency, ITO (indium tin oxide alloy) and indium zinc oxide alloy (In)₂O₃-ZnO), zinc oxide (ZnO), etc. may be used.

【0216】

After that, a contact hole is formed in the interlayer insulating film 600. Next, the connection electrode 602 that overlaps with the pixel electrode is formed. The connection electrode 602 is connected to the drain region through a contact hole. At the same time as this connection electrode, another TFT source electrode or drain electrode is also formed.

【0217】

Further, although an example in which all the drive circuits are formed on the substrate is shown here, several ICs may be used as a part of the drive circuits.

【0218】

The active matrix substrate is formed as described above. Using this active matrix substrate, after peeling off the substrate, a plastic substrate is attached, a liquid crystal module is produced according to Examples 2 to 4, a backlight 604 and a light guide plate 605 are provided, and the cover 606 is covered. An active matrix type liquid crystal display device as shown in a part of the cross-sectional view is completed. The cover and the liquid crystal module are attached using an adhesive or an organic resin. Further, when the plastic substrate and the facing substrate are bonded to each other, they may be surrounded by a frame and an organic resin may be filled between the frame and the substrate for adhesion. Further, since it is a transmissive type, the polarizing plate 603 is attached to both the plastic substrate and the facing substrate.

【0219】

In addition, this embodiment can be freely combined with Examples 1 to 4.

【0220】

[Example 6] In this embodiment, FIG. 13 shows an example of manufacturing a light emitting device provided with an organic light emitting element formed on a plastic substrate.

【0221】

In FIG. 13 (A), 600 is a substrate, 601 is a nitride layer or a metal layer, 602 is an oxide layer, 603 is an underlying insulating layer, 604a is an element of a drive circuit 611, and 604b and 604c are elements of a pixel portion 612. Reference numeral 605 is an EL element (Organic Light Emitting Device). Here, the element refers to a semiconductor element (typically a TFT) or an MIM element, an EL element, or the like used as a pixel switching element in the case of an active matrix type light emitting device. Then, these elements are covered to form an interlayer insulating film 606. The interlayer insulating film 606 preferably has a flatter surface after film formation. The interlayer insulating film 606 does not necessarily have to be provided.

【0222】

The 601 to 603 provided on the substrate 600 may be formed according to any one of the second to fourth embodiments.

【0223】

These devices (including 604a, 604b, and 604c) may be manufactured according to the n-channel type TFT201 of the above-mentioned Example 1 and the p-channel type TFT202 of the above-mentioned Example 1. Although an example in which two TFTs are used for one pixel is shown here, three or more TFTs may be used.

【0224】

The EL element 605 has a layer (hereinafter referred to as an organic light emitting layer) containing an organic compound (organic light emitting material) from which luminescence (Electroluminescence) generated by applying an electric field can be obtained, an anode layer, and a cathode layer. ing. Luminescence in organic compounds includes light emission (fluorescence) when returning from the single-term excited state to the ground state and light emission (phosphorescent light) when returning from the triple-term excited state to the ground state. , Either one of the above-mentioned light emission may be used, or both light emission may be used. In this specification, all the layers formed between the anode and the cathode of the EL element are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer and the like. Basically, the EL element has a structure in which the anode / light emitting layer / cathode are laminated in this order, and in addition to this structure, the anode / hole injection layer / light emitting layer / cathode and the anode / hole injection layer It may have a structure in which the light emitting layer, the electron transporting layer, the cathode, etc. are laminated in this order.

【0225】

When the state shown in FIG. 13 (A) is obtained by the above method, the support 608 is attached by the adhesive layer 607. (Fig. 13 (B)) In this embodiment, a plastic substrate is used as the support 608. Specifically, as the support, a resin substrate having a thickness of 10 μm or more, for example, PES (polyethylene monkey file), PC (polycarbonate), PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) can be used. When the support 608 and the adhesive layer 607 are located on the observer side (user side of the light emitting device) when viewed from the EL element, the support 608 and the adhesive layer 607 need to be materials that transmit light.

【0226】

Next, the substrate 600 provided with the nitride layer or the metal layer 601 is peeled off by physical means. (Fig. 13 (C)) Since the film stress of the oxide layer 602 and the film stress of the nitride layer or the metal layer 601 are different, they can be peeled off with a relatively small force.

【0227】

Next, it is attached to the transfer body 610 with an adhesive layer 609 such as epoxy resin. (Fig. 13 (D)) In this embodiment, the transfer body 610 is used as a plastic film substrate to reduce the weight.

【0228】

In this way, a flexible light emitting device sandwiched between the flexible support 608 and the flexible transfer member 610 can be obtained. If the support 608 and the transfer body 610 are made of the same material, the coefficient of thermal expansion becomes the same, so that the influence of stress strain due to temperature change can be reduced.

【0229】

Then, if necessary, the flexible support 608 and the flexible transfer member 610 are divided into desired shapes. Then, FPC (not shown) was attached using a known technique.

【0230】

[Example 7] In Example 6, after the support was attached, the substrate was peeled off and a plastic substrate as a transfer body was attached. However, in this embodiment, after the substrate is peeled off, the substrate is attached. This is an example of manufacturing a light emitting device equipped with an EL element by pasting a plastic substrate as a first transfer body and a plastic substrate as a second transfer body. FIG. 14 is used for the explanation.

【0231】

In FIG. 14 (A), 700 is a substrate, 701 is a nitride layer or a metal layer, 702 is an oxide layer, 703 is an underlying insulating layer, 704a is an element of a drive circuit 711, and 704b and 704c are elements of a pixel portion 712. Reference numeral 705 is an EL element (Organic Light Emitting Device). Here, the element refers to a semiconductor element (typically a TFT) or an MIM element, an EL element, or the like used as a pixel switching element in the case of an active matrix type light emitting device. Then, these elements are covered to form an interlayer insulating film 706. The interlayer insulating film 706 preferably has a flatter surface after film formation. The interlayer insulating film 706 does not necessarily have to be provided.

【0232】

The 701 to 703 provided on the substrate 700 may be formed according to any one of the second to fourth embodiments.

【0233】

These devices (including 704a, 704b, and 704c) may be manufactured according to the n-channel type TFT201 of the above-mentioned Example 1 and the p-channel type TFT202 of the above-mentioned Example 1.

【0234】

When the state shown in FIG. 14A is obtained by the above method, the substrate 700 provided with the nitride layer or the metal layer 701 is peeled off by physical means. (Fig. 14 (B)) Since the film stress of the oxide layer 702 and the film stress of the nitride layer or the metal layer 701 are different, they can be peeled off with a relatively small force.

【0235】

Next, it is attached to the transfer body (first transfer body) 710 by an adhesive layer 709 such as an epoxy resin. In this embodiment, the transfer body 710 is used as a plastic film substrate to reduce the weight.

【0236】

Next, the base material (second transfer material) 708 is bonded by the adhesive layer 707. (Fig. 14 (C)) In this embodiment, a plastic substrate is used as the base material 708. Specifically, as the transfer material 710 and the base material 708, a resin substrate having a thickness of 10 μm or more, for example, PES (polyethylene monkey file), PC (polycarbonate), PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) is used. Can be done. When located on the observer side (user side of the light emitting device) when viewed from the EL element, the base material 708 and the adhesive layer 707 need to be materials that transmit light.

【0237】

In this way, a flexible light emitting device sandwiched between the flexible base material 708 and the flexible transfer body 710 can be obtained. If the base material 708 and the transfer body 710 are made of the same material, the coefficients of thermal expansion become the same, so that the influence of stress strain due to temperature change can be reduced.

【0238】

Then, if necessary, the flexible base material 708 and the flexible transfer material 710 are divided into desired shapes. Then, FPC (not shown) was attached using a known technique.

【0239】

[Example 8] In Example 6 or Example 7, an example of obtaining a flexible light emitting device sandwiched between flexible substrates has been shown, but a substrate made of plastic generally permeates moisture and oxygen. Since the organic light emitting layer is easily deteriorated by these substances, the life of the light emitting device tends to be shortened.

【0240】

Therefore, in this embodiment, a plurality of films (hereinafter referred to as barrier films) that prevent oxygen and moisture from entering the organic light emitting layer of the EL element on the plastic substrate, and the barrier films are stressed more than the barrier film. A small layer (stress relaxation film) is provided. In the present specification, a film obtained by laminating a barrier film and a stress relaxation film is referred to as a sealing film.

【0241】

Specifically, a stress relaxation film (hereinafter referred to as a stress relaxation film) in which two or more layers of a barrier film made of an inorganic substance (hereinafter referred to as a barrier film) is provided and a resin is provided between the two layers of the barrier film (hereinafter referred to as a stress relaxation film). Is provided. Then, an EL element is formed on the three or more layers of the insulating film and sealed to form a light emitting device. Since the configuration other than the substrate is the same as that of the sixth or seventh embodiment, the configuration is omitted here.

【0242】

As shown in FIG. 15, two or more barrier films are provided on the film substrate 810, and a stress relaxation film is further provided between the two barrier films. As a result, a sealing film in which the barrier film and the stress relaxation film are laminated is formed between the film substrate 810 and the second adhesive layer 809.

【0243】

Here, as a barrier film 811a, a film made of silicon nitride is formed on the film substrate 810 by sputtering, a stress relaxation film 811b having a polyimide is formed on the barrier film 811a, and the stress relaxation film 811b is formed on the stress relaxation film 811b. As the barrier film 811c, a film made of silicon nitride is formed by sputtering. A film in which a barrier film 811a, a stress relaxation film 811b, and a barrier film 811c are laminated is collectively referred to as a sealing film 811. Then, the film substrate 810 on which the sealing film 811 is formed may be bonded to the peeled layer including the element by using the second adhesive layer 809.

【0244】

Similarly, as the barrier film 814a, a film made of silicon nitride is formed on the film substrate 812 by sputtering, a stress relaxation film 814b having a polyimide is formed on the barrier film 814a, and the stress relaxation film 814b is formed on the stress relaxation film 814b. As the barrier film 814c, a film made of silicon nitride is formed by sputtering. A film in which a barrier film 814a, a stress relaxation film 814b, and a barrier film 814c are laminated is collectively referred to as a sealing film 814. Then, the film substrate 812 on which the sealing film 814 is formed may be bonded to the peeled layer including the element by using the second adhesive layer 809.

【0245】

It is sufficient that two or more barrier films are provided. As the barrier film, silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide or aluminum nitride silicified aluminum (AlSiON) can be used.

【0246】

Since aluminum nitride silicate has a relatively high thermal conductivity, it is possible to efficiently dissipate the heat generated by the device by using it as a barrier film.

【0247】

Further, as the stress relaxation film, a translucent resin can be used. Typically, polyimide, acrylic, polyamide, polyimideamide, benzocyclobutene, epoxy resin and the like can be used. It should be noted that resins other than those described above can also be used. Here, after applying a heat-polymerizing type polyimide, it is formed by firing.

【0248】

For silicon nitride, argon is introduced, the substrate temperature is maintained at 150 ° C, and a film is formed at a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and nitrogen and hydrogen were introduced in addition to argon to form a film. In the case of silicon nitride oxide, argon is introduced, the substrate temperature is maintained at 150 ° C, and the film is formed at a sputtering pressure of about 0.4 Pa. Then, silicon was used as a target, and nitrogen, nitric oxide, and hydrogen were introduced in addition to argon to form a film. Silicon oxide may be used as the target.

【0249】

The film thickness of the barrier film is preferably in the range of 50 nm to 3 μm. Here, silicon nitride was formed into a film with a film thickness of 1 μm.

【0250】

The method for forming the barrier film is not limited to sputtering, and can be appropriately set by the practitioner. For example, a film may be formed by using an LPCVD method, a plasma CVD method, or the like.

【0251】

The film thickness of the stress relaxation film is preferably in the range of 200 nm to 2 μm. Here, a polyimide film was formed with a film thickness of 1 μm.

【0252】

By applying the plastic substrate provided with the sealing film of this example as the support 608 or transfer body 610 in Example 6 or the base material 708 or transfer body 710 in Example 7, the EL device is completely air-conditioned. Can be blocked from. As a result, deterioration of the organic light emitting material due to oxidation can be suppressed almost completely, and the reliability of the EL device can be significantly improved.

【0253】

[Example 9] The configuration of a module having an EL element obtained in Example 6 or Example 7, a so-called EL module, will be described with reference to the top view of FIG. The transfer body 610 in Example 7 or the transfer body 710 in Example 8 corresponds to the film substrate 900.

【0254】

FIG. 16 (A) is a top view showing a module having an EL element, that is, a so-called EL module, and FIG. 16 (B) is a cross-sectional view of FIG. 16 (A) cut by AA'. A pixel portion 902, a source side drive circuit 901, and a gate side drive circuit 903 are formed on a flexible film substrate 900 (for example, a plastic substrate or the like). These pixel portions and drive circuits can be obtained according to the above embodiment. Further, 918 is a sealing material, 919 is a DLC film, the pixel portion and the drive circuit portion are covered with the sealing material 918, and the sealing material is covered with the protective film 919. Further, it is sealed with a cover material 920 using an adhesive. The shape of the cover material 920 and the shape of the support are not particularly limited, and may be a flat surface, a curved surface, a bendable shape, or a film shape. In order to withstand deformation due to heat or external force, it is desirable to use the same material as the film substrate 900 for the cover material 920, for example, a plastic substrate, which is processed into the concave shape (depth 3 to 10 μm) shown in FIG. Use. It is desirable to further process it to form a recess (depth 50 to 200 μm) on which the desiccant 921 can be placed. In addition, when manufacturing an EL module with multi-chamfering, after bonding the substrate and cover material, CO₂It may be divided by using a laser or the like so that the end faces match.

【0255】

Although not shown here, circularly polarized light called a circularly polarized light composed of a retardation plate (λ / 4 plate) or a polarizing plate is used to prevent the background from being reflected due to reflection of the metal layer used (here, a cathode or the like). The means may be provided on the substrate 900.

【0256】

The 908 is a wiring for transmitting a signal input to the source side drive circuit 901 and the gate side drive circuit 903, and receives a video signal or a clock signal from an FPC (flexible printed circuit) 909 which is an external input terminal. Further, the light emitting device of this embodiment may be digitally driven or analog driven, and the video signal may be a digital signal or an analog signal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to this FPC. The light emitting device in the present specification includes not only the light emitting device main body but also a state in which an FPC or PWB is attached to the light emitting device main body. It is also possible to form complex integrated circuits (memory, CPU, controller, D / A converter, etc.) on the same board as these pixel parts and drive circuits, but it is difficult to manufacture with a small number of masks. is there. Therefore, it is preferable to mount an IC chip equipped with a memory, a CPU, a controller, a D / A converter, etc. by a COG (chip on glass) method, a TAB (tape automated bonding) method, or a wire bonding method.

【0257】

Next, the cross-sectional structure will be described with reference to FIG. 16 (B). An insulating film 910 is provided on the film substrate 900 via an adhesive layer, and a pixel portion 902 and a gate side drive circuit 903 are formed above the insulating film 910. The pixel portion 902 is a current control TFT 911 and its drain. It is formed by a plurality of pixels including a pixel electrode 912 electrically connected to the. The film substrate 900 is attached with an adhesive layer after the peelable layer formed on the substrate is peeled off according to any one of the first to fourth embodiments. Further, the gate side drive circuit 903 is formed by using a CMOS circuit in which an n-channel type TFT913 and a p-channel type TFT914 are combined.

【0258】

These TFTs (including 911, 913, and 914) may be produced according to the n-channel type TFT201 of the above-mentioned Example 1 and the p-channel type TFT202 of the above-mentioned Example 1.

【0259】

The insulating film provided between the TFT and the EL element not only blocks the diffusion of impurity ions such as alkali metal ions and alkaline earth metal ions, but also positively positively contains impurities such as alkali metal ions and alkaline earth metal ions. A material that adsorbs ions is preferable, and a material that can withstand the later process temperature is more suitable. An example of a material that meets these conditions is a silicon nitride film containing a large amount of fluorine. The concentration of fluorine contained in the silicon nitride film is 1 × 10.¹⁹/cm³As described above, preferably, the composition ratio of fluorine in the silicon nitride film may be 1 to 5%. Fluorine in the silicon nitride film binds to alkali metal ions, alkaline earth metal ions, etc. and is adsorbed in the film. Further, as another example, an organic resin film containing fine particles composed of an antimony (Sb) compound, a tin (Sn) compound, or an indium (In) compound that adsorbs alkali metal ions, alkaline earth metal ions, etc., for example, antimony pentoxide. Fine particles (Sb₂O₅ NH₂An organic resin film containing O) can also be mentioned. The organic resin film contains fine particles having an average particle size of 10 to 20 nm, and has very high light transmittance. The antimony compound represented by the antimony pentoxide fine particles easily adsorbs impurity ions such as alkali metal ions and alkaline earth metal ions.

【0260】

Another material for the insulating film provided between the active layer of the TFT and the EL element is AlN._XO_YThe layer indicated by may be used. An aluminum nitride layer (AlN) obtained by forming a film using a sputtering method, for example, using an aluminum nitride (AlN) target in an atmosphere in which argon gas, nitrogen gas, and oxygen gas are mixed._XO_YThe layer (shown by) is a film containing 2.5 atm% to 47.5 atm% of nitrogen, and in addition to having the effect of blocking water and oxygen, it has high thermal conductivity and heat dissipation effect, and is also translucent. Has the characteristic of being very high. In addition, impurities such as alkali metals and alkaline earth metals can be prevented from entering the active layer of the TFT.

【0261】

In particular, a silicon nitride film formed by using an RF sputtering apparatus and a silicon target is suitable as a passivation film for an interlayer insulating film made of an organic resin film. Since the silicon nitride film can suppress degassing of the organic resin film and can also block water and oxygen, it is possible to suppress the occurrence of defects called shrinkage of the organic compound layer.

【0262】

The pixel electrode 912 functions as an anode of the EL element. Banks 915 are formed at both ends of the pixel electrode 912, and an EL layer 916 and a cathode 917 of the light emitting element are formed on the pixel electrode 912. The bank 915 can be obtained by patterning an inorganic insulating film or an organic insulating film, and in order to improve coverage, a curved surface having a curvature is formed at the upper end or the lower end of the bank 915. Is preferable. For example, when positive photosensitive acrylic is used as the material of the bank 915, it is preferable to have a curved surface having a radius of curvature (0.2 μm to 3 μm) only at the upper end of the bank 915. Further, as the bank 915, either a negative type that becomes insoluble in the etchant by photosensitive light or a positive type that becomes soluble in the etchant by light can be used.

【0263】

As the EL layer 916, an EL layer (a layer for causing light emission and carrier movement for that purpose) may be formed by freely combining a light emitting layer, a charge transport layer, or a charge injection layer. For example, a low molecular weight organic EL material or a high molecular weight organic EL material may be used. Further, as the EL layer, a thin film made of a light emitting material (singlet compound) that emits light (fluorescence) by singlet excitation or a thin film made of a light emitting material (triplet compound) that emits light (phosphorescence) by triplet excitation can be used. It is also possible to use an inorganic material such as silicon carbide as the charge transport layer and the charge injection layer. Known materials can be used as these organic EL materials and inorganic materials.

【0264】

The cathode 917 also functions as wiring common to all pixels and is electrically connected to the FPC909 via the connection wiring 908. Further, all the elements included in the pixel portion 902 and the gate side drive circuit 903 are covered with the cathode 917, the sealing material 918, and the protective film 919.

【0265】

As the sealing material 918, it is preferable to use a material that is transparent or translucent with respect to visible light as much as possible. Further, it is desirable that the sealing material 918 is a material that does not allow moisture or oxygen to permeate as much as possible.

【0266】

Further, after completely covering the light emitting element with the sealing material 918, it is preferable to provide a protective film 919 made of a DLC film or the like on the surface (exposed surface) of the sealing material 918 at least as shown in FIG. Further, a protective film may be provided on the entire surface including the back surface of the substrate. Here, it is necessary to be careful not to form a protective film on the portion where the external input terminal (FPC) is provided. A mask may be used to prevent the protective film from being formed, or a tape such as masking tape used in the CVD apparatus may be used to cover the external input terminal portion to prevent the protective film from being formed.

【0267】

By enclosing the light emitting element with the sealing material 918 and the protective film with the above structure, the light emitting element can be completely blocked from the outside, and a substance that promotes deterioration due to oxidation of the EL layer such as moisture and oxygen from the outside. Can be prevented from invading. In addition, if a film having thermal conductivity (AlON film, AlN film, etc.) is used as the protective film, the heat generated when the film is driven can be dissipated. Therefore, a highly reliable light emitting device can be obtained.

【0268】

Further, the pixel electrode may be used as a cathode, and the EL layer and the anode may be laminated to emit light in the direction opposite to that in FIG. An example is shown in FIG. Since the top view is the same, it is omitted.

【0269】

The cross-sectional structure shown in FIG. 17 will be described below. A plastic substrate is used as the film substrate 1000. The film substrate 1000 is attached with an adhesive layer after the peelable layer formed on the substrate is peeled off according to any one of the first to fourth embodiments. An insulating film 1010 is provided on the film substrate 1000, and a pixel portion 1002 and a gate side drive circuit 1003 are formed above the insulating film 1010. The pixel portion 1002 is electrically connected to the current control TFT 1011 and its drain. It is formed by a plurality of pixels including the pixel electrode 1012. Further, the gate side drive circuit 1003 is formed by using a CMOS circuit in which an n-channel type TFT1013 and a p-channel type TFT1014 are combined.

【0270】

The pixel electrode 1012 functions as a cathode of the light emitting element. Banks 1015 are formed at both ends of the pixel electrode 1012, and an EL layer 1016 and an anode 1017 of the light emitting element are formed on the pixel electrode 1012.

【0271】

The anode 1017 also functions as wiring common to all pixels and is electrically connected to the FPC 1009 via the connection wiring 1008. Further, all the elements included in the pixel portion 1002 and the gate side drive circuit 1003 are covered with a protective film 1019 made of an anode 1017, a sealing material 1018, DLC and the like. Further, the cover material 1021 and the substrate 1000 were bonded together with an adhesive. In addition, a recess is provided in the cover material, and the desiccant 1021 is installed.

【0272】

As the sealing material 1018, it is preferable to use a material that is transparent or translucent with respect to visible light as much as possible. Further, it is desirable that the sealing material 1018 is a material that does not allow moisture or oxygen to permeate as much as possible.

【0273】

Further, in FIG. 17, since the pixel electrode is used as the cathode and the EL layer and the anode are laminated, the light emitting direction is the direction of the arrow shown in FIG.

【0274】

Although not shown here, in order to prevent the background from being reflected due to the reflection of the metal layer used (here, the pixel electrode that serves as the cathode), a circularly polarizing plate made of a retardation plate (λ / 4 plate) or a polarizing plate is used. Circularly polarized light means called may be provided on the cover material 1020.

【0275】

In this embodiment, since the TFT having high electrical characteristics and reliability obtained in Example 1 is used, it is possible to form a light emitting element having higher reliability than the conventional element. Further, by using a light emitting device having such a light emitting element as a display unit, a high-performance electric appliance can be obtained.

【0276】

In addition, this Example can be freely combined with Example 1, Example 7, Example 8, or Example 9.

【0277】

[Example 10] Various modules (active matrix type liquid crystal module, passive type liquid crystal module, active matrix type EL module, passive type EL module, active matrix type EC module) can be completed by carrying out the present invention. That is, by carrying out the present invention, all electronic devices incorporating them are completed.

【0278】

Such electronic devices include video cameras, digital cameras, head-mounted displays (goggles-type displays), car navigation systems, projectors, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.). Can be mentioned. Examples of these are shown in FIGS. 18 and 19.

【0279】

FIG. 18A is a personal computer, which includes a main body 2001, an image input unit 2002, a display unit 2003, a keyboard 2004, and the like.

【0280】

FIG. 18B is a video camera, which includes a main body 2101, a display unit 2102, an audio input unit 2103, an operation switch 2104, a battery 2105, an image receiving unit 2106, and the like.

【0281】

FIG. 18C is a mobile computer (mobile computer), which includes a main body 2201, a camera unit 2202, an image receiving unit 2203, an operation switch 2204, a display unit 2205, and the like.

【0282】

FIG. 18D is a player that uses a recording medium on which a program is recorded (hereinafter referred to as a recording medium), and includes a main body 2401, a display unit 2402, a speaker unit 2403, a recording medium 2404, an operation switch 2405, and the like. This player can use a DVD (Digtial Versatile Disc), a CD, or the like as a recording medium for listening to music, watching movies, playing games, or playing the Internet.

【0283】

FIG. 18E shows a digital camera, which includes a main body 2501, a display unit 2502, an eyepiece unit 2503, an operation switch 2504, an image receiving unit (not shown), and the like.

【0284】

FIG. 19A shows a mobile phone, which includes a main body 2901, an audio output unit 2902, an audio input unit 2903, a display unit 2904, an operation switch 2905, an antenna 2906, an image input unit (CCD, image sensor, etc.) 2907 and the like.

【0285】

FIG. 19B is a portable book (electronic book), which includes a main body 3001, a display unit 3002, 3003, a storage medium 3004, an operation switch 3005, an antenna 3006, and the like.

【0286】

FIG. 19C shows a display, which includes a main body 3101, a support base 3102, a display unit 3103, and the like.

【0287】

By the way, the display shown in FIG. 19C is a small or medium-sized display or a large-sized display, for example, a display having a screen size of 5 to 20 inches. Further, in order to form a display unit having such a size, it is preferable to use a substrate having a side of 1 m and perform multi-chamfering for mass production.

【0288】

As described above, the scope of application of the present invention is extremely wide, and it can be applied to manufacturing methods of electronic devices in all fields. Further, the electronic device of this embodiment can be realized by using any combination of Examples 1 to 9.

【0289】

[Effect of the invention]

Since the present invention is peeled from the substrate by physical means, the reliability of the device can be improved without damaging the semiconductor layer.

【0290】

Further, the present invention can not only peel off the layer to be peeled off having a small area, but also peel off the layer to be peeled off having a large area over the entire surface with good yield.

【0291】

In addition, the present invention can be said to be a process suitable for mass production because it can be easily peeled off by physical means, for example, peeled off by a human hand. Further, when a manufacturing apparatus for peeling off the layer to be peeled off is manufactured at the time of mass production, a large-sized manufacturing apparatus can also be manufactured at low cost.

[Simple explanation of drawings]

[Figure 1]

It is a figure explaining Embodiment 1.

[Figure 2]

It is a figure explaining Embodiment 2. FIG.

[Fig. 3]

It is a figure explaining an experiment.

[Fig. 4]

It is a figure explaining Embodiment 3. FIG.

[Fig. 5]

It is a figure explaining Embodiment 4. FIG.

[Fig. 6]

The figure which shows the manufacturing process of an active matrix substrate.

[Fig. 7]

The figure which shows the manufacturing process of an active matrix substrate.

[Fig. 8]

The figure which shows the active matrix substrate.

[Fig. 9]

It is a figure explaining Example 2. FIG.

[Fig. 10]

It is a figure explaining Example 3. FIG.

[Fig. 11]

It is a figure explaining Example 4. FIG.

[Fig. 12]

It is a figure explaining Example 5.

[Fig. 13]

It is a figure explaining Example 6.

[Fig. 14]

It is a figure explaining Example 7.

[Fig. 15]

It is a figure explaining Example 8. FIG.

[Fig. 16]

It is a figure explaining Example 9.

[Fig. 17]

It is a figure explaining Example 9.

[Fig. 18]

The figure which shows an example of an electronic device.

[Fig. 19]

The figure which shows an example of an electronic device.

[Fig. 20]

Cross-sectional TEM photographic and schematic views of the partially exfoliated boundary.

[Fig. 21]

The graph which shows the TXRF measurement result of the peeled silicon oxide film surface.

[Fig. 22]

The graph which shows the TXRF measurement result of the W film surface formed on the quartz substrate. (reference) [Fig. 23]

The graph which shows the TXRF measurement result of the quartz substrate surface. (reference)