Electron beam treatment device

Description: TECHNICAL FIELD [Detailed description of the invention]

【0001】

[Technical field to which the invention belongs]

The present invention relates to an electron beam processing apparatus used in processes such as surface modification, thin film formation, electron beam curing, and dry cleaning.

【0002】

[Conventional technology]

For example, the electron beam irradiation technology utilizes the high electron energy to allow electrons to penetrate into a relatively deep part of the object to be processed for processing, and a thin film curing technology utilizing this feature is known. .. For example, in Tokushuhei 8-510864, electron beam tubes are arranged in a straight line or in a staggered pattern, and the electron beams emitted from a plurality of electron beam tubes are overlapped so as to be linear as a whole. The object to be processed is processed by the electron beam by the linear electron beam.

【0003】

In the case of such a device, since the entire electron beam is linear, it is necessary to move the object to be processed with respect to the electron beam tube in order to process the entire processing area of the object to be processed. In Special Table No. 8-510864, the object to be processed is moved by using a rotating roller, which is a transport system.

【0004】

In addition, since the transport system is directly under the electron beam tube, it is very difficult to control the irradiation atmosphere of the electron beam. Normally, the electron beam irradiates the object to be processed in the air (atmosphere). Is to be done.

【0005】

In recent years, SOG film curing technology has been developed, and the film formed by this technology has come to be used as an interlayer insulating film for semiconductors and the like. Conventionally, the method for producing an SOG film has been to apply a liquid substance for a film to be a film on a silicon wafer with a spin coater and heat it at 400 to 450 ° C. for about 1 hour to form a film.

[Problems to be Solved by the Invention]

【0006】

However, it takes about one hour to cure the film only by heating, and it is necessary to shorten the curing time in order to improve the throughput. Therefore, it is possible to irradiate the liquid substance for film on the silicon wafer or the liquid substance for film previously heated at about 200 ° C with an electron beam having high energy to cure the liquid substance for film from the inside for a short time. It was discovered that the film was cured and the desired film quality was obtained.

【0007】

However, as described above, in a device in which a plurality of electron beam tubes are arranged in a linear or staggered manner, the electron beam does not spread as a whole and becomes linear. Therefore, a silicon wafer coated with a liquid material for a film is used as an electron beam. It had to be moved to the pipe, and when contaminated particles were generated from the transport system during the movement, the liquid substance for the film was contaminated, and there was a problem that the SOG film was defective.

【0008】

Furthermore, it was discovered that when a silicon wafer coated with a liquid substance for a film is heated at the same time as irradiation with an electron beam, a synergistic effect appears remarkably and the film can be cured in an extremely short time. In this case, the mechanism for moving the silicon wafer while heating is extremely complicated, and there is also a problem that contaminated particles are generated from the heating source, resulting in an increase in the defective rate of the SOG film.

【0009】

In view of the above-mentioned various problems, an object of the present invention is to satisfactorily overlap electron beams emitted from a plurality of electron beam tubes so that the absorbed dose in the entire processing region of the object to be processed becomes a predetermined distribution state. By doing so, it is an object of the present invention to provide an electron beam processing apparatus capable of batch processing the entire processing area of the object to be processed without moving the object to be processed.

【0010】

[Means for solving problems]

In order to solve the above problems, in the electron beam processing apparatus according to claim 1, an electron beam generator is provided inside the vacuum vessel, and an electron beam emitting window through which the electron beam generated by the electron beam generator is transmitted is provided on the front surface. A plurality of electron beam tubes formed by the above are electron beam processing devices in which an electron beam emitting window is exposed in a processing chamber for processing an object to be processed, and each of the electron beam tubes is It is characterized in that the absorbed dose of the entire treatment area of the object to be treated is arranged so as to have a predetermined distribution state.

【0011】

The electron beam processing apparatus according to claim 2 is the electron beam processing apparatus according to claim 1, and is characterized in that the processing chamber is decompressed by a pressure adjusting mechanism.

【0012】

The electron beam processing apparatus according to claim 3 is the electron beam processing apparatus according to any one of claims 1 and 2, and in particular, for placing an object to be processed in the processing chamber. The mounting table is provided, and the mounting table is characterized in that the distance from the electron beam emitting window can be changed.

【0013】

BEST MODE FOR CARRYING OUT THE INVENTION

FIG. 1 is an explanatory diagram of an electron beam tube used in the electron beam processing apparatus of the present invention. The electron beam tube 1 has a vacuum container 11 made of glass and an electron beam generator 12 provided in the vacuum container 11.

【0014】

The electron beam generator 12 has a filament 121 and a grid 122, and a high voltage of, for example, 5 to 70 kV is applied to the filament 121 and the grid 122 from a DC high voltage power supply via a terminal 13. Further, the filament 121 is heated by supplying an electric current from another filament power source via the terminal 13, and emits thermions. The emitted electrons are shaped into a beam by the electric field generated by the grid 122.

【0015】

A silicon lid member 14 is provided on one end side of the vacuum vessel 11, and the lid member 14 is formed with a slit 141 through which an electron beam passes. A thin-film electron beam emitting window 15 made of silicon is formed in front of the slit 141 so as to airtightly cover the slit 141, and the electron beam generated from the electron beam generator 12 is emitted from the electron beam emitting window 15. Is transmitted to the outside of the electron beam tube 1.

【0016】

FIG. 2 is a front view of the lid member 14. The lid member 14 is provided with five slits 141 in a straight line, and a bridge portion 141a is formed between the slits 141. Then, for convenience, an electron beam emitting window 15 having a rectangular outer diameter shown by a dotted line is formed so as to cover all the slits 141.

【0017】

The electron beam emitting window 15 is mainly made of silicon or a silicon compound, and has a thickness of 0.3 to 3 μm so as to satisfactorily transmit the electron beam generated from the electron beam generator 12. As described above, since the electron beam emitting window 15 has a very thin thickness of 0.3 to 3 μm, when the area of the slit 141 becomes large, the electron beam irradiation window 15 is broken due to the passage of an electron beam or the stress applied to the electron beam emitting window 15. In order to prevent this, the area of each slit 141 is reduced as described above, and a bridge portion 141a is provided between the slits 141 to prevent the electron beam emitting window 15 from being torn. It is a thing. The reason why the slits 141 are arranged in a straight line is that the electron beam is applied to each of the slits 141 substantially uniformly.

【0018】

FIG. 3 is an explanatory diagram of the electron beam processing apparatus of the present invention. In the electron beam tube 1, the lid member 14 formed on one end side of the vacuum container 11 described above is hermetically fixed to the upper wall 21 of the processing chamber 2, and the electron beam emitting window 15 is exposed to the processing chamber 2. The object W to be processed is placed on a mounting table 3 provided in the processing chamber 2 and is arranged so as to face the electron beam emitting window 15. The mounting table 3 can change the separation distance between the electron beam emitting window 15 of the electron beam tube 1 and the object W to be processed.

【0019】

Further, the processing chamber 2 is provided with an exhaust port 40 for reducing the pressure inside the processing chamber 2 and an exhaust pipe 41 following the exhaust port 40, and includes an exhaust system 4 composed of these. The reason for providing the exhaust system 4 is that the electron beam transmitted through the electron beam emitting window 15 passes through the space in the processing chamber 2 and irradiates the object W to be processed. At this time, the spread and reach of the electron beam are determined by the pressure in the processing chamber 2, and the internal pressure in the treatment chamber 2 is controlled through the exhaust pipe 41 in order to obtain the desired spread and reach of the electron beam. ..

【0020】

Further, in the processing chamber 2, an inhibitory gas such as nitrogen for preventing a reaction other than the desired reaction of the object W to be processed from occurring in the processing chamber 2 and ultraviolet rays are generated in the processing chamber 2. A gas introduction port 50 for introducing a gas such as argon for causing a desired reaction, and an introduction pipe 51 following the gas introduction port 50 are provided, and a gas introduction system 5 composed of the gas introduction port 50 is provided. For example, the exhaust system 4 puts the inside of the treatment chamber 2 into a desired depressurized state, and then the gas introduction system 5 introduces nitrogen gas into the treatment chamber 2, fills the treatment chamber 2 with nitrogen gas, and depressurizes the inside. It is to make it into a state. That is, the processing chamber 2 is provided with a pressure adjusting mechanism K including an exhaust system 4 and a gas introduction system 5, and the pressure adjusting mechanism K determines the gas type and the decompression state in the processing chamber 2 and spreads the electron beam. And to adjust the reach.

【0021】

FIG. 4 is an explanatory diagram for explaining the arrangement state of the electron beam tubes of the electron beam processing apparatus of the present invention, and shows the arrangement state of each electron beam tube from the object W side of FIG. 3, respectively. The lid member 14 of the electron beam tube 1 and the electron beam emitting window 15 are drawn, and the object W to be processed is also drawn so that the relationship between the arrangement state of the electron beam tube and the circular object to be processed can be understood. It is a figure.

【0022】

In FIG. 4, the lid member 14 of each electron beam tube is centered on the center point P1 of the electron beam emission window 15 of the central electron beam tube a, and the electron beam emission windows 15 of other electron beam tubes are spaced at 60 ° intervals. The center points P2, P3, and P4 of the above are arranged so as to be located on concentric circles, and the distance between the center points P1, P2, P3, and P4 of the adjacent electron beam emitting windows 15 is 60 mm. Has been done.

【0023】

Specifically, each electron beam tube 1 is centered on the center point P1 of the electron beam emission window 15 of the central electron beam tube a, and the center P2 of the electron beam emission window 15 is separated from this center point P1 by 60 mm. , The center point of the six electron beam tubes b where the center P2 of the electron beam emission window 15 is located at a position maintained at an interval of 60 ° from the center point P1 and the center point of the electron beam emission window 15 of the central electron beam tube a. The center P3 of the electron beam emitting window 15 is located at a position where the center P3 of the electron beam emitting window 15 is separated from the center point P1 by 104 mm and the distance of 60 ° is maintained about the center point P1. Centering on the center point P1 of the electron beam emission window 15 of the central electron beam tube a and the six electron beam tubes c, the center P4 of the electron beam emission window 15 is separated from this center point P1 by 120 mm and is centered. A total of 19 electron beam tubes 1 are arranged so that there are 6 electron beam tubes d in which the center P4 of the electron beam emission window 15 is located at a position maintained at an interval of 60 ° with respect to the point P1.

【0024】

In this way, the electron beam tubes b, c, and d are arranged concentrically around the electron beam tube a. The output of the electron beam tube a is 45 μA, the output of the electron beam tube b is 50 μA, the output of the electron beam tube c is 60 μA, the output of the electron beam tube d is 65 μA, and the central electron beam. The output of each electron beam tube increases as the distance from the tube a increases.

【0025】

That is, a plurality of electron beam tubes exist around the central electron beam tube a, and the surrounding electron beam tubes b, electron beam tubes c, and the like are placed on the object to be processed immediately below the electron beam tube a. Since a part of the electron beam from the electron beam tube d is irradiated, the output of the electron beam tube a is suppressed, and conversely, some other electron beam tubes are surrounded by the electron beam tube d existing at the outermost position. Is present, and some other electron beam tubes are not present. Therefore, in FIG. 4, the uppermost electron beam tube d has electron beam tubes b and c in the lower part in the figure, and the electron beam tubes b and c are present in the upper part. In the absence of the electron beam tube, the output of the electron beam tube d is increased because it is smaller than the amount of the electron beam directly under the electron beam tube a on the object to be processed directly under the electron beam tube d. ..

【0026】

That is, in this embodiment, the output of the electron beam tube a is 45 μA, the output of the electron beam tube b is 50 μA, and the output of the electron beam tube c is 60 μA under the condition that the separation distances of all the electron beam tubes are equal. The output of the electron beam tube d is 65 μA, which defines the irradiation electron dose emitted from each electron beam tube so that the absorbed dose of the entire processing area of the object to be treated becomes uniform.

【0027】

As a result, the absorbed dose of the entire treatment area on the object W to be processed can be made uniform, and the object W to be processed can be uniformly processed all at once without moving. Depending on the pressure state in the processing chamber 2 or the separation distance between the object W to be processed and the electron beam emitting window 15 of the electron beam tube 1, the irradiation doses emitted from each electron beam tube 1 may all be the same. .. Such an arrangement state of the electron beam tube is suitable for a treatment area of the object to be processed having a circular shape. The irradiation electron dose emitted from each electron beam tube is the irradiation electron dose emitted from other surrounding electron beam tubes, the distance from the surrounding other electron beam tubes, the number of electron beam tubes, or the number of electron beam tubes. The absorbed dose of the entire treatment area of the object to be treated is set to have a predetermined distribution state in consideration of the distance from the wall of the treatment chamber.

【0028】

Similar to FIG. 4, FIG. 5 shows the lid member 14 and the electron beam emission window 15 of each electron beam tube 1 so that the relationship between the arrangement state of the electron beam tubes and the rectangular object to be processed can be understood. It is explanatory drawing which also drew the part W to be processed. In FIG. 5, the electron beam tube a is adjacent to another electron beam tube (b, c,) so as to surround the electron beam tube a with a center point P1 of the electron beam emission window 15 at an interval of 60 °. Six d) are arranged. The electron beam tube b has five other electron beam tubes (a, d) arranged so as to surround the electron beam tube b around the center P2 of the electron beam emission window 15 and adjacent to each other at an interval of 60 °. ing. In the electron beam tube c, four other electron beam tubes (a, d) are arranged so as to surround the electron beam tube c around the center P3 of the electron beam emission window 15 and to be adjacent to each other at an interval of 60 °. ing. The electron beam tube d differs depending on the location, but is adjacent to another electron beam tube (a) so as to surround the electron beam tube d so as to surround the electron beam tube d with the center P4 of the electron beam emission window 15 as the center. , B, c, d) are arranged three times. Further, the distances from the center points P1, P2, P3, and P4 of the adjacent electron beam emitting windows 15 are all arranged to be 60 mm.

【0029】

The output of the electron beam tube a is 50 μA, the output of the electron beam tube b is 55 μA, the output of the electron beam tube c is 60 μA, and the output of the electron beam tube d is 65 μA.

【0030】

That is, the output of the electron beam tube is specifically adjusted in consideration of the irradiation electron dose emitted from other electron beam tubes adjacent to the electron beam tube and the distance from the other electron beam tubes. There are six electron beam tubes a around the electron beam tube a, so that a part of the electron beam from the surrounding electron beam tubes is on the object to be processed directly under the electron beam tube a. Since it is irradiated, the output of the electron beam tube a is suppressed, and the electron beam tube d has only three adjacent electron beam tubes around the electron beam tube d, and the object to be processed directly under the electron beam tube d. In the above, the amount of the electron beam directly under the electron beam tube a is smaller than that of the electron beam, so the output of the electron beam tube d is increased.

【0031】

That is, in this embodiment, the output of the electron beam tube a is 50 μA, the output of the electron beam tube b is 55 μA, and the output of the electron beam tube c is 60 μA under the condition that the separation distances of all the electron beam tubes are equal. The output of the electron beam tube d is 65 μA, which defines the irradiation electron dose emitted from each electron beam tube so that the absorbed dose of the entire processing area of the object to be treated becomes uniform.

【0032】

As a result, the absorbed dose of the entire treatment area on the object W to be processed becomes uniform, and the object W to be processed can be uniformly and collectively processed without moving. Depending on the pressure state in the processing chamber 2 or the separation distance between the object W to be processed and the electron beam emitting window 15 of the electron beam tube 1, the irradiation doses emitted from each electron beam tube 1 may all be the same. .. Such an arrangement state of the electron beam tube is suitable when the processing area of the object to be processed is quadrangular. The irradiation electron dose emitted from each electron beam tube is the irradiation electron dose emitted from other surrounding electron beam tubes, the distance from the surrounding other electron beam tubes, the number of electron beam tubes, or the number of electron beam tubes. The absorbed dose of the entire treatment area of the object to be treated is set to have a predetermined distribution state in consideration of the distance from the wall of the treatment chamber.

【0033】

Next, a technique for performing electronic processing using the electron beam processing apparatus of the present invention shown in FIG. 3 will be described. The arrangement state of the electron beam tubes of this device is the same as the arrangement state of the electron beam tubes shown in FIG. After the inside of the processing chamber 2 was sufficiently exhausted by the exhaust system 4, nitrogen gas was introduced from the gas introduction system 5 so that the internal pressure became 5 Torr. Then, the separation distance between the electron beam emitting window 15 of each electron beam tube 1 shown in FIG. 3 and the object W to be processed, which is a silicon wafer of the mounting table 3, was set to 60 mm.

【0034】

As shown in FIG. 4, the electron beam tubes have a separation distance of 60 mm, and the electron beam tube a, the electron beam tube b, the electron beam tube c, and the electron beam tube d are all electron beam emission windows. 15 is silicon with a thickness of 3 μm, an acceleration voltage of 25 kV, and an output of 50 μA.

【0035】

Then, an EB photosensitive film, which is a circular electron dosimetry sheet having a thickness of 20 μm and a diameter of 200 mm, was pasted on the object W to be treated, and an electron beam was irradiated from all the electron beam tubes toward the EB photosensitive film for 70 seconds. At this time, the absorbed dose on the EB photosensitive film was 14 μC / cm.²Met.

【0036】

Then, the maximum absorbed dose value and the minimum absorbed dose value of the entire treated area are measured from the degree of exposure of the EB photosensitive film, and the amplitude degree of the absorbed dose of the entire treated area is determined using the following evaluation formula. The uniformity was evaluated using the width. From the following evaluation formula, the uniformity increases as the amplitude approaches 0.

【0037】

[Number 1]

<img file="JP2002182000A_D0001.tif" />【0038】

The amplitude degree indicating uniformity is 7%, and it can be seen that the object to be processed is irradiated with the electron beam almost uniformly.

【0039】

On the other hand, in the above-mentioned electron beam processing apparatus, when only the pressure in the processing chamber 2 is set to the atmospheric pressure state, the electron beam reaches only 6 mm in front of the electron beam emitting window 15 and is 60 mm away from the electron beam irradiation window 15. The electron did not reach the object to be processed W, and the object to be processed could not be processed.

【0040】

Therefore, the inside of the processing chamber 2 is depressurized with nitrogen of 5 Torr, the distance between the electron beam emitting window 15 of the electron beam tube 1 and the object W to be processed is 60 mm, and the arrangement state and output of each electron beam tube are as described above. By doing so, the absorbed dose of the entire treatment area on the object W to be processed becomes uniform, and the object W to be processed can be uniformly and collectively processed.

【0041】

Next, another example of performing electronic processing using the electron beam processing apparatus of the present invention shown in FIG. 3 will be described. As shown in FIG. 4, the electron beam tubes of this device are arranged so that the distance between the electron beam tubes is 60 mm, and the electron beam tubes a, electron beam tube b, electron beam tube c, and electron beam tubes are arranged. In d, the electron beam emitting window 15 is made of silicon having a thickness of 3 μm, the acceleration voltage is 40 kV, and the output is 50 μA. After the inside of the processing chamber 2 was sufficiently exhausted by the exhaust system 4, nitrogen gas was introduced from the gas introduction system 5 so that the internal pressure became 5 Torr. Then, the distances between the electron beam emitting window 15 and the mounting table 3 of each electron beam tube 1 shown in FIG. 3 were set in two ways. That is, the separation distance from the object W to be processed, which is a silicon wafer, was set to 60 mm and 75 mm.

【0042】

Then, an EB photosensitive film, which is a circular electron dosimetry sheet having a thickness of 20 μm and a diameter of 200 mm, was pasted on the object W to be treated, and an electron beam was irradiated from all the electron beam tubes toward the EB photosensitive film for 25 seconds. The absorbed dose at this time is 26 μC / cm on the EB photosensitive film when the distance between the electron beam emission window 15 and the object W to be processed is 60 mm.²When the distance between the electron beam emission window 15 and the object W to be processed is 75 mm, it is 20 μC / cm on the EB photosensitive film.²Met.

【0043】

Then, the amplitude degree of the electron beam on the object to be processed was measured by measuring the sensitivity degree of the EB photosensitive film by the measurement method described above. The result is that when the distance between the electron beam exit window and the object to be processed is 60 mm, the amplitude that indicates uniformity is 10%, and when the distance between the electron beam exit window and the object to be processed is 75 mm, it is uniform. The degree of amplitude indicating sex was 6.5%.

【0044】

From this result, when the acceleration voltage is as high as 40 kV, the spread of the electron beam emitted from the electron beam emission window is narrow, and the distance between the electron beam emission window and the object to be processed is as close as 60 mm. Since the overlap of the electron beams emitted from other electron beam tubes is insufficient, the absorbed dose in the entire processing area on the object to be processed is not uniform, and the separation distance between the electron beam emission window and the object to be processed is increased. It can be seen that when the distance is 75 mm, the overlap of the electron beams emitted from the other electron beam tubes is in the optimum state, so that the absorbed dose of the entire processing region on the object to be processed becomes uniform.

【0045】

As can be seen from this result, the distance between the electron beam exit window of the electron beam tube and the object to be processed is changed according to the irradiation conditions of the electron beam such as the pressure in the processing chamber and the magnitude of the acceleration voltage. It is possible to improve the uniformity of the absorbed dose over the entire treatment area.

【0046】

If the uniformity has a certain allowable range, when the object to be processed is treated with an electron beam, the distance between the electron beam exit window of the electron beam tube and the object to be processed is changed to permeate the object to be processed. The depth of the electron beam to be used can be adjusted. Specifically, in the SOG film curing process, the distance between the electron beam emission window and the object to be processed is constant in order to cure the surface of the SOG film liquid substance coated on the silicon wafer. When the surface of the liquid material for SOG film is cured, the distance between the electron beam emission window and the object to be processed is shortened so that the electron beam reaches deep inside the liquid material for SOG film. Can also be cured.

【0047】

Next, another example of performing electronic processing using the electron beam processing apparatus of the present invention shown in FIG. 3 will be described. As shown in Fig. 4, the arrangement of the electron beam tubes in this device is such that the distance between each electron beam tube is 60 mm, the output of the electron beam tube a is 45 μA, and the output of the electron beam tube b is 50 μA. The output of the electron beam tube c is 60 μA, the output of the electron beam tube d is 65 μA, and the electron beam emission window 15 is made of silicon with a thickness of 3 μm, and the acceleration voltage is 25 kV. After the inside of the processing chamber 2 was sufficiently exhausted by the exhaust system 4, nitrogen gas was introduced from the gas introduction system 5 so that the internal pressure became 5 Torr. Then, the separation distance between the electron beam emitting window 15 of each electron beam tube 1 shown in FIG. 3 and the object W to be processed, which is a silicon wafer of the mounting table 3, was set to 60 mm.

【0048】

Then, the amplitude of the absorbed dose in the entire processing region was measured by measuring the degree of exposure of the EB photosensitive film by the above-mentioned measuring method. The amplitude degree indicating uniformity is 5.5%, the electron beams overlap very well in the processing chamber, the absorbed dose of the entire processing region on the object W becomes extremely uniform, and the object to be processed is electron beamed. It can be seen that uniform processing can be performed.

【0049】

That is, as shown in FIG. 4, the separation distance of each electron beam tube is made constant so that the absorbed dose of the entire treatment area on the object to be treated is extremely uniform, and the electron beam tubes a are centered in a concentric circle. , The electron beam tube b, the electron beam tube c on the outside, and the electron beam tube d on the outside, and the output value from the electron beam tube is increased as it goes to the outer electron beam tube. As a result, it can be seen that the electron beams overlap very well in the processing chamber and the object to be processed can be uniformly processed by the electron beam. The allowable range of the absorbed dose amplitude of the entire treated area on the processed object changes depending on the type of the object to be processed and the processing method, and the electron beam does not exceed the allowable range of the amplitude. By reducing the distance between the emission window 15 and the object W to be processed on the mounting table 3, the maximum irradiation speed can be obtained and the optimum irradiation conditions can be obtained. When the object to be processed is small, a plurality of objects to be processed can be arranged side by side on the mounting table 3 for batch processing.

【0050】

[Effect of the invention]

As described above, according to the electron beam irradiation device of the present invention, the irradiation electron dose emitted from each electron beam tube is the irradiation electron dose emitted from other surrounding electron beam tubes and other surrounding electron beam tubes. Considering the distance from the electron beam tube, the absorbed dose of the entire processing area of the object to be treated is arranged so as to have a predetermined distribution state. Therefore, when the predetermined distribution state is uniform, the treatment is to be performed. The absorbed dose of the entire processing area of the object becomes uniform, and the entire processing area of the object to be processed can be uniformly and collectively processed without moving the object to be processed.

【0051】

Further, since the processing chamber is depressurized by the pressure adjusting mechanism, the electron beams emitted from the plurality of electron beam tubes can be optimally superposed, and the entire electron beam can be made more uniform and planar.

【0052】

Furthermore, it is possible to adjust the depth of the electron beam penetrating the object to be processed and the uniformity of the electron beam on the object to be processed by changing the separation distance between the electron beam emission window of the electron beam tube and the object to be processed. it can.

[Simple explanation of drawings]

[Figure 1]

It is explanatory drawing of the electron beam tube.

[Figure 2]

It is a front view of the lid member of an electron beam tube. [Fig. 3]

It is explanatory drawing of the electron beam processing apparatus of this invention.

[Fig. 4]

It is explanatory drawing explaining the arrangement state of the electron beam tube of the electron beam processing apparatus of this invention.

[Fig. 5]

It is explanatory drawing explaining the arrangement state of another electron beam tube of the electron beam processing apparatus of this invention.

[Explanation of symbols]

1 Electron beam tube 11 Vacuum container 12 electron beam generator 121 Filament 122 grid 13 terminals 14 Lid member 141 slit 15 Electron beam emission window 2 processing room 21 Upper wall of processing room 3 Mounting stand 4 Exhaust system 5 Gas introduction system K pressure adjustment mechanism W Processed object