Aligner

Description: TECHNICAL FIELD [Detailed description of the invention]

【0001】

[Technical field to which the invention belongs]

The present invention relates to an exposure apparatus that uses ultraviolet light as the exposure light and irradiates a photosensitive substrate with a mask pattern via a projection optical system.

【0002】

[Conventional technology]

Conventionally, in the manufacturing process of a semiconductor element formed from an ultrafine pattern such as an LSI or an VLSI, a reduced projection exposure is formed by reducing and projecting a circuit pattern drawn on a mask onto a substrate coated with a photosensitizer. The device is in use. As the mounting density of semiconductor elements has improved, further miniaturization of patterns has been required, and at the same time as the development of the resist process, miniaturization of exposure equipment has been made.

【0003】

As a means for improving the resolving power of the exposure apparatus, there are a method of changing the exposure wavelength to a shorter wavelength and a method of increasing the numerical aperture (NA) of the projection optical system.

【0004】

Regarding the exposure wavelength, the KrF excimer laser having an oscillation wavelength of around 248 nm and the ArF excimer laser having an oscillation wavelength of around 193 nm have recently been developed from the i-line of 365 nm. Furthermore, fluorine (F) having an oscillation wavelength near 157 nm₂ ) An excimer laser is being developed.

【0005】

[Problems to be Solved by the Invention]

Far-ultraviolet rays, especially the ArF excimer laser with a wavelength near 193 nm, and fluorine (F) with an oscillation wavelength near 157 nm.₂ ) In excimer lasers, oxygen (O) is in the band near these wavelengths.₂ It is known that there are multiple absorption bands of).

【0006】

For example, since a fluorine excimer laser has a short wavelength of 157 nm, its application to exposure equipment is being promoted, but the wavelength of 157 nm is in a wavelength region generally called vacuum ultraviolet. This is because light absorption by oxygen molecules is large in this wavelength region, so that the atmosphere hardly transmits light and can be applied only in an environment where the atmospheric pressure is lowered to near vacuum and the oxygen concentration is sufficiently lowered. According to the literature, "Photochemistry of Small Molecules" (Hideo Okabe, AWiley-Interscience Publication, 1978, p. 178), the absorption coefficient of oxygen for light with a wavelength of 157 nm is about 190 atm.^-1cm^-1Is. This is because when light with a wavelength of 157 nm passes through a gas with an oxygen concentration of 1% at 1 atm, the transmittance per lcm is T = exp (-190 la 1 cm la 0.01 atm) = 0.150 Show that there is only.

【0007】

In addition, oxygen absorbs the above light to cause ozone (O).₃ ) Is generated, and this ozone further increases the absorption of light and significantly reduces the transmittance, and in addition, various products caused by ozone adhere to the surface of the optical element, which reduces the efficiency of the optical system.

【0008】

Therefore, ArF excimer laser, fluorine (F)₂ ) In the optical path of the exposure optical system of a projection exposure device that uses far ultraviolet rays as a light source such as an excimer laser, the oxygen concentration existing in the optical path is reduced to a low level of several ppm or less by purging means with an inert gas such as nitrogen. The method of holding down is taken.

【0009】

In this way, far-ultraviolet rays, especially the ArF excimer laser having a wavelength near 193 nm, and fluorine (F) having a wavelength near 157 nm.₂ ) In the exposure equipment using excimer laser light, ArF excimer laser light and fluorine (F)₂ ) Since excimer laser light is very easily absorbed by substances, it is necessary to purge the inside of the optical path on the order of several ppm or less. The same can be said for water, and it is still necessary to remove it on the order of ppm or less.

【0010】

Therefore, an object of the present invention is to provide an exposure apparatus that strictly removes oxygen existing in an exposure optical path and performs stable exposure.

【0011】

[Means for solving problems]

The exposure apparatus of the present invention for achieving the above object includes a chuck for holding the substrate, a stage for positioning the substrate via the chuck, and a mechanism for purging the exposure light path near the stage with an inert gas. A top plate provided on the stage and forming a surface substantially matching the surface of the substrate is provided, a gap is provided between the side surface of the substrate and the top plate, and the depth of the gap is the gap. It is characterized in that it is the same as the width of the gap or larger than the width of the gap.

【0012】

It is desirable to provide a slope that is not perpendicular to the surface of the substrate on the side surface of the chuck. Further, it is desirable to provide a slope that is not perpendicular to the surface of the substrate on the side surface of the step between the bottom surface of the gap provided between the side surface of the substrate and the surface of the top plate and the surface of the top plate. Further, it is desirable that the depth of the gap is 1 mm or more from the surface of the substrate. Further, it is desirable that the difference between the surface of the substrate and the surface of the top plate is 4 mm or less.

【0013】

Further, in another exposure apparatus of the present invention for achieving the above object, a chuck for holding the substrate, a stage for positioning the substrate via the chuck, and an exposure light path in the vicinity of the stage are provided with an inert gas. It is characterized by having a mechanism for purging and a top plate provided on the stage and forming a surface substantially coincide with the substrate holding surface of the chuck.

【0014】

It is desirable to provide a gap between the side surface of the chuck and the top plate, and a ventilation hole having a volume larger than the volume of the gap and communicating with the gap. Further, it is desirable that the width between the chuck side surface and the top plate surface is smaller than the width between the chuck side surface and the inside of the top plate. Further, it is desirable to provide a supply port for blowing gas into the gap formed between the side surface of the chuck and the top plate. Further, it is desirable to provide a ventilation hole for communicating the gap formed between the side surface of the chuck and the top plate and the surface of the top plate. Further, it is desirable to provide a ventilation hole for communicating the gap formed between the chuck side surface and the top plate and the opening substantially parallel to the scanning direction of the stage. Further, it is desirable that the angle formed by the surface provided with the opening and the scanning direction is 30 degrees or less. Further, it is desirable to provide a slope that is not perpendicular to the surface of the substrate on the side surface of the chuck. Further, it is desirable that the height difference between the chuck substrate holding surface and the surface of the top plate is 3 mm or less.

【0015】

Further, in another exposure apparatus of the present invention for achieving the above object, a chuck for holding the substrate, a stage for positioning the substrate via the chuck, and an exposure light path in the vicinity of the stage are provided with an inert gas. It is characterized by having a mechanism for purging and a top plate provided on the stage and forming a surface substantially coincide with the chuck holding surface.

【0016】

It is desirable that the height difference between the chuck holding surface of the stage and the surface of the top plate is 2 mm or less.

【0017】

Further, in another exposure apparatus of the present invention for achieving the above object, a chuck for holding the substrate, a stage for positioning the substrate via the chuck, and an exposure light path in the vicinity of the stage are provided with an inert gas. A mechanism for purging and a top plate provided on the stage and forming a surface substantially matching the surface of the substrate are provided, and the gap between the side surface of the substrate and the top plate is larger than the volume of the gap. It is characterized in that it has a volume and is provided with a ventilation hole that communicates with a gap.

【0018】

Further, in another exposure apparatus of the present invention for achieving the above object, a chuck for holding the substrate, a stage for positioning the substrate via the chuck, and an exposure light path in the vicinity of the stage are provided with an inert gas. A mechanism for purging and a top plate provided on the stage and forming a surface substantially matching the surface of the substrate are provided, and the width of the gap between the side surface of the substrate and the surface of the top plate is the width of the chuck side surface. It is characterized in that it is smaller than the width of the gap between the top plate and the top plate.

【0019】

Further, in another exposure apparatus of the present invention for achieving the above object, a chuck for holding the substrate, a stage for positioning the substrate via the chuck, and an exposure light path in the vicinity of the stage are provided with an inert gas. A mechanism for purging, a top plate provided on the stage and forming a surface corresponding to the surface of the substrate, and a supply port for blowing gas into a gap formed between the side surface of the substrate and the top plate. It is characterized by being prepared.

【0020】

Further, in another exposure apparatus of the present invention for achieving the above object, a chuck for holding the substrate, a stage for positioning the substrate via the chuck, and an exposure light path in the vicinity of the stage are provided with an inert gas. A mechanism for purging, a top plate provided on the stage and forming a surface corresponding to the surface of the substrate, a gap formed between the side surface of the substrate and the top plate, and the surface of the top plate are communicated with each other. It is characterized by having a ventilation hole.

【0021】

Further, in another exposure apparatus of the present invention for achieving the above object, a chuck for holding the substrate, a stage for positioning the substrate via the chuck, and an exposure light path in the vicinity of the stage are provided with an inert gas. The purging mechanism, the top plate provided on the stage and forming a surface corresponding to the surface of the substrate, the gap formed between the side surface of the substrate and the top plate, and the scanning direction of the stage are approximately the same. It is characterized by having a ventilation hole that communicates with a parallel opening.

【0022】

It is desirable to provide a slope that is not perpendicular to the surface of the substrate on the side surface of the step between the bottom surface of the gap provided between the side surface of the substrate and the surface of the top plate and the surface of the top plate. Further, it is desirable that the difference between the surface of the substrate and the surface of the top plate is 4 mm or less.

【0023】

Further, in another exposure apparatus of the present invention for achieving the above object, a chuck for holding the substrate, a stage for positioning the substrate via the chuck, and an exposure light path in the vicinity of the stage are provided with an inert gas. It is characterized in that it is provided with a mechanism for purging, a top plate provided on the stage and holding the chuck, and a slope is provided on the side surface of the chuck.

【0024】

Further, in another exposure apparatus of the present invention for achieving the above object, a chuck for holding the substrate, a stage for positioning the substrate via the chuck, and an exposure light path in the vicinity of the stage are provided with an inert gas. A mechanism for purging and a top plate provided on the stage and holding the chuck are provided, and the side surface of the step provided on the top plate is made a slope.

【0025】

The mechanism may include a cover that covers the exposure optical path between the lower end of the projection optical system or the illumination optical system on the substrate side and the vicinity of the stage, and a supply port that blows an inert gas into the cover. desirable. Further, it is desirable that the supply port has one or two or more nozzles. Further, it is desirable that the supply port also serves as the cover. Further, it is desirable that one of the insides of the cover is provided with a supply port for blowing the purge gas, and the other inside the cover is provided with a recovery port for sucking the purge gas. Further, it is desirable that the cover is an air curtain made of an inert gas. Further, it is desirable that the inert gas is any one of nitrogen, helium and argon.

【0026】

It is desirable that the top plate is provided integrally with the stage.

【0027】

The exposure light is preferably ultraviolet light. Further, it is desirable that the ultraviolet light is laser light using a laser as a light source. It is desirable that the laser is a fluorine excimer laser or an ArF excimer laser.

【0028】

BEST MODE FOR CARRYING OUT THE INVENTION

FIG. 26 shows an example of an exposure apparatus that purges the exposure optical path near the stage with an inert gas.

【0029】

As described above, in order to secure the transmittance of ultraviolet light or its stability, it is necessary to purge the ultraviolet light path such as the wafer stage of the exposure apparatus with an inert gas. Therefore, as shown in FIG. 26, a cover 13 is provided to surround the ultraviolet optical path from the lower end of the projection optical system 9 in the exposure apparatus toward the vicinity of the wafer stage 14, and a purge gas composed of an inert gas is provided inside the cover 13. A supply port 11 for blowing in is provided and purged. Further, by providing the top plate 16 forming the same surface as the wafer 10 on the outside of the wafer 10, the opening of the cover 13 including the run-up section before and after the shot of the outer peripheral portion of the wafer is exposed to the sky. It prevents oxygen, moisture, etc. from entering from the outside of the cover 13 so as not to come off from the plate portion.

【0030】

Here, even if the top plate 16 forming the same surface as the wafer 10 is provided, the outer tolerance of the wafer 10 and the position accuracy when the wafer 10 is placed on the wafer stage 14 are allowed, so that the wafer 10 and the top plate 16 are provided. A groove-shaped gap 17 having a width of about 1 mm and a depth equivalent to the wafer thickness (for example, 0.775 mm for a 300 mm wafer) is required between the plates 16 over the entire circumference of the wafer 10. It is necessary to purge the gap 17.

【0031】

For example, a case where the first shot 29 of the shot layout shown in FIG. 27 is scanned and exposed after the wafer is replaced will be described.

【0032】

First, when the wafer 10 is placed on the wafer stage 14, the wafer stage 14 is removed from under the cover 13 as shown in FIG. 27. Therefore, the surface of the wafer 10, the surface of the top plate 16, and the groove-shaped gap 17 between the wafer 10 and the top plate 16 are not purged with the inert gas from the cover 13. Then, when the wafer stage 14 starts to run to expose the first shot 29, the top plate moves under the cover 13, and as shown in FIG. 28, all the openings 18 of the cover 13 are covered with the top plate. 16 will be covered. At this point, the inside of the cover 13 becomes a positive pressure with respect to the outside, and the inert gas is ejected from the gap s3 over the entire circumference between the cover 13 and the top plate 16, and oxygen, moisture, etc. from the outside of the cover 13 are released. Since the intrusion can be blocked, the inside of the cover 13 will start to be purged. At this time, the inert gas ejected from the gap s3 between the cover 13 and the top plate 16 toward the wafer side flows along the surfaces of the top plate 16 and the wafer 10, so that the wafer stage 14 moves further. Even before the end of the surface of the wafer 10 reaches the end of the cover 13, the end of the wafer surface is purged to some extent.

【0033】

However, in this state, the groove-shaped gap 17 is recessed with respect to the flow of the inert gas, so that it is hardly purged. Therefore, as shown in FIG. 29, the groove-shaped gap 17 reaches the end of the cover while oxygen, water, and the like remain in the groove-shaped gap 17. At this point, the flow of the inert gas also goes to the groove-shaped gap 17, so that oxygen, water, and the like remaining in the groove-shaped gap 17 begin to be pushed out. At this time, when viewed in a plan view as shown in FIG. 30, since the groove-shaped gap 17 is an arc, a part of the groove-shaped gap 17 first reaches the cover end portion 19, and then the entire cover opening portion 18. It reaches to spread over the width. During this time, some of the oxygen, water, etc. extruded from the groove-shaped gap 17 goes out of the cover from the cross section of the groove-shaped gap 17, but a considerable part of it is rolled up inside the cover 13. As long as the area facing the cover opening 18 is sufficiently smaller than the opening due to the gap s2 between the surrounding cover 13 and the wafer 10, the resistance is large, so that no substantial flow occurs and the area becomes large to some extent. The flow suddenly starts to occur for the first time, but at that point, the area facing the cover opening 18 is larger than the cross-sectional area of the groove-shaped gap 17, so it winds up inside the cover 13. This is because the ratio is larger.

【0034】

Then, in the state where the winding continues, the wafer 10 reaches the exposure area and the exposure starts. Therefore, the cover 13 is exposed in a state where local concentration unevenness of oxygen, water, etc. is generated, which causes illuminance change and illuminance unevenness, and there is a possibility that desired resolution performance cannot be obtained.

【0035】

Not only in the case of the first shot 29, but also in the case of scanning and exposing the shot of the outer peripheral portion of the wafer from the outer peripheral portion of the wafer to the inside of the wafer, the groove-shaped gap moves from the outside to the inside of the cover 13 as described above. Since it is exposed, the same problem occurs.

【0036】

Further, even when the shot of the outer peripheral portion of the wafer is scanned and exposed from the inside of the wafer toward the outer periphery of the wafer, the same problem occurs because the groove-shaped gap moves from the outside to the inside of the cover 13 in the latter half of the exposure. It will occur.

【0037】

Therefore, in the shot of the outer peripheral portion of the wafer, there is a possibility that the desired resolution performance cannot be obtained due to illuminance change and illuminance unevenness due to oxygen, moisture, etc. from the groove-shaped gap 17 between the wafer 10 and the top plate 16. There is.

【0038】

On the other hand, as the diameter of wafers has been increasing in recent years for the purpose of improving productivity, improving the yield of semiconductor elements on the outer periphery of the wafer has become an increasingly important issue, and the wafer is also shot on the outer periphery of the wafer. It is desired to develop an effective purging means for stable exposure as in the case of the central shot.

【0039】

Therefore, the detailed configuration of the present invention for sufficiently purging oxygen, water, etc. in the gap 17 will be described below. <Embodiment of Exposure Device> First, the overall configuration of the exposure device of the present invention will be described. In the exposure apparatus of the present invention, ultraviolet light is not limited to the exposure light, but far ultraviolet rays, particularly ArF excimer laser having a wavelength near 193 nm and fluorine (F2) excimer laser light having a wavelength near 157 nm. It is effective against.

【0040】

Hereinafter, examples of the present invention will be described with reference to the drawings.

【0041】

(Example 1) FIG. 1 is a main part of a step-and-scan type projection exposure apparatus according to an embodiment of the present invention.

【0042】

In FIG. 1, ultraviolet light coming from an ultraviolet light source (not shown) to the illumination system 1 in the exposure apparatus irradiates the reticle 6 mounted on the reticle stage 7. A cover 4 is provided to surround the ultraviolet optical path from the lower end of the illumination optical system 1 on the reticle side to the vicinity of the reticle stage 7, and a plurality of nozzles 2 which are supply ports for blowing purge gas composed of an inert gas are provided inside the cover 4. There is. The gap between the tip of the cover 4 and the reticle 6 is s1. Inert gases such as nitrogen, helium, and argon are blown into the inside of the cover 4 from the nozzle 2 from the inside of the illumination optical system 1, and exposure harmful substances such as oxygen and moisture are purged.

【0043】

A top plate 8 is provided on the reticle stage 7 to form almost the same surface as the surface of the reticle 6, so that even if the reticle stage 7 moves due to the scanning operation, the portion effectively purged by the cover 4. It doesn't come off.

【0044】

The ultraviolet light transmitted through the reticle 6 irradiates the wafer 10 mounted on the wafer stage 14 via the projection optical system 9. A cover 13 surrounding the ultraviolet optical path is provided from the lower end of the projection optical system 9 on the wafer side toward the vicinity of the wafer stage 14, and a plurality of nozzles 11 which are supply ports for blowing purge gas composed of an inert gas are provided inside the cover 13. ing. Inert gases such as nitrogen, helium, and argon are blown from the inside of the projection optical system 9 into the inside of the cover 13 from the nozzle 11, and exposure harmful substances such as oxygen and moisture are purged. The gap between the tip of the cover 13 and the wafer 10 is s2.

【0045】

It is desirable that the gap s2 is as small as possible because the purging capacity inside the cover 13 can be increased and the flow rate of the purge gas supplied to the inside of the cover 13 can be reduced. On the other hand, a certain amount of gap is required to avoid contact, and in this embodiment, it is set to 1 mm. If the gap s2 is increased, the inside of the cover 13 cannot be made positive pressure with respect to the outside unless the flow rate of the purge gas is increased, and exposure harmful substances such as oxygen and moisture flow in from the outside and sufficient purging cannot be performed. .. However, for example, when the flow rate of the purge gas blown into the cover 13 is 50 NL / min and the entire circumference of the gap s2 is 300 mm, if the gap s2 is set to about 5 mm or less, the average flow velocity flowing out from the gap s2 is 550 mm / When about s or more is obtained, the inside of the cover 13 becomes positive pressure and can be sufficiently purged.

【0046】

A chuck 15 for sucking and holding the wafer 10 as a substrate is provided on the wafer stage 14, and the wafer 10 is carried onto the chuck 15 by a transfer mechanism (not shown) and is sucked and held or carried out. A top plate 16 is provided on the wafer stage 14 to form almost the same surface as the surface of the wafer 10, so that even if the wafer stage 14 moves due to the scanning operation, the portion effectively purged by the cover 13. It doesn't come off. The wafer stage 14 and the top plate 16 may be integrally configured. Further, the chuck provided on the wafer stage for sucking and holding the wafer may be detachably configured.

【0047】

To prevent dust from being generated, riding on, or being damaged due to contact between the wafer 10 and the top plate 16 due to the external tolerance of the wafer 10 and the position accuracy when the wafer 10 is placed on the wafer stage 14. , A groove-shaped gap 17 shown in FIG. 2 is provided so as to surround the entire circumference of the wafer. The outer tolerance of the wafer 10 varies depending on the grade, with a radius of about 0.25 to 0.5 mm, and the roundness, the outer tolerance on the top plate side, and the wafer 10 are placed on the wafer stage 14. Including the positional accuracy, the width W of the groove-shaped gap 17 needs to be about 1 mm or more. Further, in order to reduce the volume in the groove-shaped gap 17 and reduce the total amount of oxygen, water, etc., it is desirable that the width W of the groove-shaped gap 17 is small, so that it is preferably about 1 to 2 mm. It is set to 1 mm.

【0048】

On the other hand, it is desirable that the depth D of the groove-shaped gap 17 is at least larger than the width W and is as large as possible. Since the width W is 1 mm, the depth D needs to be 1 mm or more, and in this embodiment, it is set to 10 mm. When the groove-shaped gap 17 is deepened in this way, as described below, even if the groove-shaped gap 17 moves under the cover opening 18, oxygen, moisture, etc. are less likely to wind up inside the cover 13. Become.

【0049】

For example, when a shot of the outer peripheral portion of the wafer is scanned and exposed from the outer peripheral portion of the wafer to the inside of the wafer, the groove-shaped gap 17 moves from the outside to the inside of the cover 13 as shown in FIG. However, in this state, since the groove-shaped gap 17 is recessed with respect to the flow of the purge gas, the inside of the gap 17 is not sufficiently purged. Therefore, as shown in FIG. 3, the groove-shaped gap 17 reaches the end portion 19 of the cover while oxygen, water, and the like remain in the groove-shaped gap 17. At this point, the flow of purge gas also goes to the groove-shaped gap 17, so that oxygen, water, and the like remaining in the groove-shaped gap 17 begin to be pushed out.

【0050】

Here, since the groove-shaped gap 17 has an arc shape along the outer shape of the wafer, only a part of the groove-shaped gap 17 reaches the end portion 19 of the cover 13 at this time, as shown in the plan view of FIG. When that part is enlarged three-dimensionally, it is shown in Fig. 5.

【0051】

In the figure, the opening area A1 in which the groove-shaped gap 17 opens with respect to the cover opening 18 (that is, the area of the portion overlapping the gap 17 when the cover opening is projected in the vertical direction) is the wafer. It expands as the stage 14 moves, and as the opening area A1 increases, the flow of purge gas also goes to the groove-shaped gap 17. However, while the opening area A1 is sufficiently smaller than the opening due to the surrounding gap s2, the resistance is large, and the resistance does not flow into the groove-shaped gap 17, but flows horizontally to the outside of the cover 13.

【0052】

As shown in Fig. 5, the opening area A1 is s2 ^ 2 = 1mm²When it reaches a certain level, a flow inside the gap 17 begins to occur, and oxygen, water, etc. remaining in the groove-shaped gap 17 begin to be pushed out. On the other hand, the cross-sectional area A2 of the groove-shaped gap 17 (cross-sectional area of the vertical plane of the gap 17) is 20 mm on both the left and right sides.²Therefore, at the time when this flow starts to occur, the cross-sectional area A2 is about 20 times larger than the opening area A1. Therefore, most of the flow of oxygen, moisture, etc. extruded from the groove-shaped gap 17 is the flow 20 extruded from the cross-sectional area A2 to the outside of the cover 13, and the flow that winds up inside the cover 13 hardly occurs. In this process, the opening area A1 is 20 mm.²In the meantime, a flow 20 is formed along the groove-shaped gap 17 toward the outside of the cover 13 through the cross-sectional area A2.

【0053】

Since the purge gas is blown into the cover 13 from the nozzle 11 so that a flow velocity that is 10 times or more the scanning speed of 0.1 to 0.5 m / S can be obtained, a flow velocity faster than the moving speed of the cross-sectional area A2 is generated. Then, the purge gas flow 20 is formed from the inside of the cover 13 to the outside through the cross-sectional area A2. In the meantime, oxygen, water, etc. remaining in the groove-shaped gap 17 are discharged to the outside of the cover 13, and the inside of the groove-shaped gap 17 on the outside of the cover 13 is purged first with purge gas. ..

【0054】

After that, the groove-shaped gap 17 spreads over the entire width of the cover opening 18, but during that time, the purge gas flows 20 from the inside of the cover 13 to the outside through the cross-sectional area A2, and the cover. It blocks the intrusion of oxygen, moisture, etc. from the outside to the inside of 13.

【0055】

As described above, it is possible to almost prevent oxygen, water, etc. remaining in the groove-shaped gap 17 from being rolled up in the cover 13. Therefore, since the cover 13 is exposed in a state where local concentration unevenness of oxygen, moisture, etc. does not occur, desired resolution performance can be obtained without causing illuminance change or illuminance unevenness, and in the shot of the outer peripheral portion of the wafer. As with the shot at the center of the wafer, stable exposure is achieved.

【0056】

In the above description, the top plate 16 is substantially flush with the surface of the wafer 10, but it may be slightly deviated. The gap between the tip of the cover 13 and the wafer 10 or the top plate 16 can be sufficiently purged if it is about 5 mm or less as described above, so the gap s2 is 1 mm, and the gap s3 between the tip of the cover 13 and the top plate 16 is May be 5 mm, conversely, the gap s2 may be 5 mm, the gap s3 may be 1 mm, or in between. However, the more the gap is opened, the slower the start of extruding oxygen, water, etc. remaining in the groove-shaped gap 17, and the opening area A1 at the start of discharge approaches the cross-sectional area A2, so that the cross-sectional area A2 is passed. As a result, the rate of flow to the outside of the cover 13 decreases and the rate of winding up inside the cover 13 increases. Therefore, it is desirable that the depth of the groove-shaped gap is as large as possible. Therefore, by providing a groove-shaped gap depth D at least larger than the width W, the ratio of the flow that flows up inside the cover 13 to the flow that passes through the cross-sectional area A2 and is discharged to the outside of the cover 13 is sufficient. Since it can be secured, the same effect can be obtained.

【0057】

The above has described the operation of scanning and exposing the shot of the outer peripheral portion of the wafer from the outer peripheral portion of the wafer to the inside of the wafer. However, the operation of scanning and exposing the shot of the outer peripheral portion of the wafer from the inside of the wafer toward the outer periphery of the wafer is also the latter half of the exposure. The groove-shaped gap 17 moves from the outside to the inside of the cover 13, and the same effect as described above can be obtained.

【0058】

It is desirable to provide a groove-shaped gap 17 deep to the chuck support surface as shown in FIG. 6 because the chuck 15 can be easily attached to and detached from the wafer stage 14 for chuck cleaning and the like.

【0059】

Further, the width of the gap on the side surface of the wafer and the width of the gap on the side surface of the chuck 15 do not necessarily have to be the same, and the outer shape of the chuck and the outer shape of the wafer do not necessarily have to be the same. Be done.

【0060】

With the exposure apparatus of this embodiment, even when the fluorine gas laser was used for the exposure light, impurities in the optical path of the fluorine gas laser could be eliminated, and sufficient transmittance and its stability could be ensured even in the exposure over the entire wafer.

【0061】

(Example 2) FIG. 7 shows the case where the ventilation hole 21 having a larger space is provided in the lower part of the groove-shaped gap 17 provided between the wafer 10 and the top plate 16 in the above-mentioned Example 1. Is an example of. That is, the width between the wafer 10 and the top plate 16 is made smaller than the width between the side surface of the chuck and the inside of the top plate.

【0062】

According to this embodiment, the cross-sectional area A2 can be made very large. Therefore, when the groove-shaped gap 17 moves from the outside to the inside of the cover 13 and opens with respect to the cover opening 18, oxygen, water, etc. remaining in the groove-shaped gap 17 begins to be extruded. The cross-sectional area A2 is much larger than the opening area A1.

【0063】

Therefore, almost all of the flow of oxygen, moisture, etc. pushed out from the groove-shaped gap 17 flows into the ventilation hole 21 once without resistance, and is further pushed out from the cross-sectional area A2 to the outside of the cover 13, so that it is inside the cover 13. There is almost no winding flow. Further, even if the inside of the ventilation hole 21 is not completely purged, the purge gas can flow from the inside of the cover 13 toward the ventilation hole 21 in the groove-shaped gap 17, and oxygen from the ventilation hole to the inside of the cover 13 can flow. , Blocks the ingress of moisture, etc.

【0064】

As described above, it is possible to almost prevent oxygen, moisture, etc. from being rolled up into the cover 13 from the groove-shaped gap 17. As a result, since the cover 13 is exposed without local uneven concentration of oxygen, moisture, etc., desired resolution performance can be obtained without causing illuminance change or illuminance unevenness, and a shot of the outer peripheral portion of the wafer can be obtained. In the same manner as the shot at the center of the wafer, stable exposure is performed.

【0065】

In this embodiment, the groove-shaped gap depth D does not have to be the same as the thickness of the wafer 10, and may be large or small, but it is desirable that the depth D be smaller. This is because the volume of the groove-shaped gap 17 itself can be reduced, the total amount of oxygen, moisture, etc. is reduced, the resistance when flowing into the ventilation hole 21 is further reduced, and the flow that winds up inside the cover 13 is less likely to occur. Because. However, even if it is increased, the same effect can be obtained if the ventilation hole 21 has a volume larger than the volume of the groove-shaped gap 17.

【0066】

Further, as shown in FIG. 8, the ventilation holes 21 may communicate with a plurality of openings 22 provided on the side surfaces of the wafer stage 14. At this time, the opening 22 may be provided anywhere as long as it is a surface substantially parallel to the scanning direction within about 30 degrees. In this way, during scanning, the airflow 23 faces the opening 22 due to the relative movement of the opening 22 with respect to the surrounding gas, so that the airflow 23 flows relatively in parallel. As a result, the airflow side 23 becomes a negative pressure, the gas inside the opening 22 is drawn to the outside, and a flow from the inside of the ventilation hole 21 to the opening 22 is formed. Therefore, when the groove-shaped gap 17 moves from the outside to the inside of the cover 13 and opens with respect to the cover opening 18, oxygen, moisture, etc. remaining in the groove-shaped gap 17 are pushed out into the ventilation holes. Is also promoted by the pull-in by the flow from the inside of the ventilation hole 21 to the opening 22, and the flow that winds up inside the cover 13 is less likely to occur.

【0067】

Further, also in this embodiment, it is desirable that the top plate 16 is substantially flush with the surface of the wafer 10 because the purging capacity can be increased and the flow rate of the purge gas can be reduced, but it may be slightly deviated. The gap between the tip of the cover 13 and the wafer 10 or the top plate 16 can be sufficiently purged if it is about 5 mm or less, so the gap s2 is set to 1 mm and the gap s3 between the tip of the cover 13 and the top plate 16 is set to 5 mm. On the contrary, the gap s2 may be 5 mm and the gap s3 may be 1 mm, or between them. If a groove-shaped gap 17 is provided deeply to the chuck support surface as shown in FIG. 7, chuck cleaning or the like may be performed. Therefore, it is desirable because the chuck 15 can be easily attached to and detached from the wafer stage 14.

【0068】

Further, the cross-sectional shape of the ventilation hole is not limited to the above-mentioned shape, and may be arbitrary. For example, it may have a shape that facilitates flow as shown in FIG. Further, the outer shape of the chuck and the outer shape of the wafer do not necessarily have to match, and the same effect can be obtained by increasing either of them.

【0069】

With the exposure apparatus of this embodiment, even if the fluorine gas laser is used for the exposure light, impurities in the optical path of the fluorine gas laser can be eliminated, and sufficient transmittance and its stability can be ensured even in the exposure over the entire wafer.

【0070】

(Example 3) FIG. 10 is another embodiment in the case where the shape of the top plate side is the slope 24 in the cross section of the groove-shaped gap 17 provided between the wafer 10 and the top plate 16. That is, in this embodiment, a slope that is not perpendicular to the surface of the wafer is provided on the side surface of the step between the bottom surface of the gap provided between the side surface of the wafer and the surface of the top plate and the surface of the top plate.

【0071】

In this way, before the groove-shaped gap 17 moves from the outside to the inside of the cover 13 and opens with respect to the cover opening 18, it is purged by the flow of purge gas from the gap s2 between the cover 13 and the top plate 16. Therefore, the groove-shaped gap 17 reaches the cover opening 18 in a state where there is almost no oxygen, moisture, or the like in the groove-shaped gap 17. Therefore, even if a flow that winds up inside the cover 13 occurs at that time, there is almost no problem.

【0072】

In this embodiment, it is desirable that the depth D of the groove-shaped gap is as shallow as possible, the width W is wide, and the slope 24 is gentle. For that purpose, as shown in FIG. 11, it is preferable that the bottom surface of the groove-shaped gap 17 is made shallow so as to be substantially aligned with the wafer suction surface of the chuck 15. At this time, of course, the surface is made smooth without providing convex protrusions such as the wafer adsorption surface. Further, the side surface of the chuck 15 and the top plate 16 are closely attached and embedded so as not to provide a gap, or are closely attached via an elastic body, and can be separated and attached and detached.

【0073】

Further, the cross-sectional shape of the slope 24 is not limited to one diagonal line, and may be a combination of a plurality of curves, horizontal lines, vertical lines, and diagonal lines, and a shape in which the depth gradually increases and the flow is easy is desirable.

【0074】

Even if a groove-shaped gap 17 is provided deeply to the chuck support surface as shown in FIG. 10, it is desirable because the chuck 15 can be easily attached to and detached from the wafer stage 14 for chuck cleaning and the like. However, since the amount of step increases and becomes deeper, it is desirable to make the thickness of the chuck 15 as thin as about 1.5 to 3 mm. Alternatively, as shown in FIG. 12, it is better to provide a slope 25 similar to the top plate side on the side surface side of the chuck 15 so that the flow of the purge gas hitting the side surface of the chuck 15 smoothly escapes to the upper part of the wafer 10. Will be done.

【0075】

Further, in this embodiment, the top plate 16 may be substantially flush with the surface of the wafer 10, but it is desirable that the top plate surface is provided as low as possible from the wafer surface because the slope becomes gentler. Since the gap between the tip of the cover 13 and the wafer 10 or the top plate 16 can be sufficiently purged if it is about 5 mm or less, the gap s2 may be 1 mm and the gap s3 between the tip of the cover 13 and the top plate 16 may be 5 mm. And may be in the meantime.

【0076】

With the exposure apparatus of this embodiment, even when the fluorine gas laser was used for the exposure light, impurities in the optical path of the fluorine gas laser could be eliminated, and sufficient transmittance and its stability could be ensured even in the exposure over the entire wafer.

【0077】

(Example 4) FIG. 13 is another embodiment in the case where a plurality of supply ports 26 for blowing purge gas are provided in the groove-shaped gap 17 provided between the wafer 10 and the top plate 16. In this way, since there is almost no oxygen, moisture, etc. in the groove-shaped gap 17 due to the purge gas from the supply port 26, the groove-shaped gap 17 reaches the inside of the cover 13 and winds up inside the cover 13. Even if a flow occurs, it hardly matters. The purge gas supply to the supply port 26 is connected to the supply port 26 from a purge gas supply source (not shown) provided on the outside of the wafer stage 14 via a movable pipe (not shown).

【0078】

In order to reduce the consumption of purge gas, the supply of purge gas from the supply port 26 is stopped by means (not shown) except during the exposure sequence, or the outer peripheral shot of the wafer 10 is exposed even during the exposure sequence. When the outer peripheral shot on the back side of the wafer is exposed, it is supplied only from the supply port 26 provided in the groove-shaped gap 17 facing the back side of the wafer, and the outer peripheral shot on the front side of the wafer is exposed. At that time, it is also possible to supply only from the supply port 26 provided in the groove-shaped gap 17 facing the front side of the wafer.

【0079】

Further, also in this embodiment, it is desirable that the top plate 16 is substantially flush with the surface of the wafer 10 because the purging capacity can be increased and the flow rate of the purge gas can be reduced, but it may be slightly deviated. The gap between the tip of the cover 13 and the wafer 10 or the top plate 16 can be sufficiently purged if it is about 5 mm or less, so the gap s2 is set to 1 mm and the gap s3 between the tip of the cover 13 and the top plate 16 is set to 5 mm. On the contrary, the gap s2 may be 5 mm, the gap s3 may be 1 mm, or between them.

【0080】

It is desirable to provide a groove-shaped gap 17 deep to the chuck support surface as shown in FIG. 13 because the chuck 15 can be easily attached to and detached from the wafer stage 14 for chuck cleaning and the like.

【0081】

With the exposure apparatus of this embodiment, even if the fluorine gas laser is used for the exposure light, impurities in the optical path of the fluorine gas laser can be eliminated, and sufficient transmittance and its stability can be ensured even in the exposure over the entire wafer.

【0082】

(Example 5) In FIG. 14, in the above-described fourth embodiment, in order to eliminate the consumption of purge gas in the groove-shaped gap 17, a plurality of supply ports 26 are communicated with each other on the surface of the top plate 16 by a plurality of ventilation holes 27. This is another example of the case.

【0083】

According to this embodiment, in the operation of scanning and exposing the shot of the outer peripheral portion of the wafer from the outer peripheral portion of the wafer to the inside of the wafer, the groove-shaped gap 17 moves from the outside to the inside of the cover 13 and opens with respect to the cover opening 18. The cover opening 18 reaches above the opening of the ventilation hole 27 provided on the surface of the top plate 16. Then, the purge gas flows from the inside of the cover 13 to the supply port through the ventilation hole 27, and the groove-shaped gap 17 starts to be purged. By the time the groove-shaped gap 17 reaches the cover opening 18, the groove-shaped gap 17 is filled. Will be in a state where there is almost no oxygen, water, etc. Therefore, even if a flow that winds up inside the cover 13 occurs at that time, there is almost no problem.

【0084】

Further, when the shot of the outer peripheral portion of the wafer is scanned and exposed from the inside of the wafer toward the outer periphery of the wafer, the groove-shaped gap 17 moves from the outside to the inside of the cover 13 in the latter half of the exposure, and the groove-shaped gap 17 is moved from the outside to the inside. 17 reaches the cover opening 18 first. However, in that case, since it flows back from the supply port 26 to the ventilation hole 27 and is purged, oxygen, moisture, etc. are further wound in the cover 13 from the groove-shaped gap 17 as compared with the above-mentioned Example 1. It can be prevented from rising.

【0085】

Further, also in this embodiment, it is desirable that the top plate 16 is substantially flush with the surface of the wafer 10 because the purging capacity can be increased and the flow rate of the purge gas can be reduced, but it may be slightly deviated. The gap between the tip of the cover 13 and the wafer 10 or the top plate 16 can be sufficiently purged if it is about 5 mm or less, so the gap s2 is set to 1 mm and the gap s3 between the tip of the cover 13 and the top plate 16 is set to 5 mm. On the contrary, the gap s2 may be 5 mm, the gap s3 may be 1 mm, or between them.

【0086】

It is desirable to provide a groove-shaped gap 17 deep to the chuck support surface as shown in FIG. 14 because the chuck 15 can be easily attached to and detached from the wafer stage 14 for chuck cleaning and the like.

【0087】

With the exposure apparatus of this embodiment, even when the fluorine gas laser was used for the exposure light, impurities in the optical path of the fluorine gas laser could be eliminated, and sufficient transmittance and its stability could be ensured even in the exposure over the entire wafer.

【0088】

(Example 6) FIGS. 15 to 22 show this embodiment. In Examples 1 to 5 described above, the surface of the top plate and the surface of the wafer were substantially matched. On the other hand, in this embodiment, the cross-sectional shape of the gap 17 as in Examples 1 to 5 described above is such that the surface of the top plate is substantially aligned with the surface of the chuck 15 or is provided lower. Since other configurations are almost the same as those of the above-described first to fifth embodiments, the description of the components will be omitted.

【0089】

According to this implementation, the flow of purge gas from the gap s2 between the cover 13 and the top plate 16 hits the side surface of the wafer 10 before the groove-shaped gap 17 reaches the cover opening 18 (see, for example, FIG. 15). .. Then, since the flow is divided into a flow that rides on the upper surface of the wafer 10 and a flow that goes toward the groove-shaped gap 17, the purge gas is positively entrained inside the groove-shaped gap 17. Therefore, oxygen, moisture, and the like can be considerably reduced by the time the groove-shaped gap 17 reaches the cover opening 18, so that there is a peculiar effect that the amount of winding up inside the cover 13 can be further reduced.

【0090】

Further, the width of the groove-shaped gap does not depend on the outer tolerance of the wafer 10 or the position accuracy when the wafer 10 is placed on the wafer stage 14, and the groove is formed by suppressing the outer tolerance of the chuck 15 and the top plate 16. The width W of the gap between the shapes can be made smaller. Therefore, the volume in the groove-shaped gap 17 is reduced, the total amount of oxygen, water, etc. is reduced, and there is a peculiar effect that the amount of winding up in the cover 13 can be reduced. In the above-mentioned Example 3, the height of the top plate 16 is lowered, so that the volume in the groove-shaped gap 17 is reduced, and the same effect is obtained.

【0091】

Further, in the third embodiment, since the slope 24 becomes gentle as the height of the top plate 16 decreases, it is peculiar that the groove-shaped gap 17 is likely to be purged by the time it reaches the cover opening 18. Has the effect of.

【0092】

(Example 7) In FIG. 23, in the above Examples 1 and 3, the surface of the top plate 16 is substantially aligned with or lower than the wafer holding surface of the chuck 15, and the groove-shaped gap 17 itself is eliminated. Another embodiment of the case. Since the gap s3 between the tip of the cover 13 and the top plate 16 must be 5 mm or less, if the gap s2 between the end of the cover 13 and the wafer 10 can be 1 mm and the thickness of the wafer 10 can be up to 1 mm, Can be lowered to 3 mm.

【0093】

In this way, since there is no dent, the surface of the top plate 16 including the vicinity of the wafer 10 is purged by the time the wafer 10 reaches the cover opening 18, so that there is almost no oxygen, moisture, or the like. Become. Therefore, even if a flow of winding up inside the cover 13 occurs when the wafer 10 reaches the cover opening 18, there is almost no problem.

【0094】

It should be noted that the side surface of the chuck 15 and the top plate 16 are closely attached and embedded so as not to provide a gap, or are closely attached via an elastic body, and can be separated and attached and detached.

【0095】

Further, as shown in FIG. 24, the surface of the top plate may be substantially aligned with or lower than the chuck holding surface on the wafer stage 14, and the groove-shaped gap 17 itself may be eliminated. This is desirable because the chuck 15 can be easily attached to and detached from the wafer stage 14 for chuck cleaning and the like. However, the gap s3 between the tip of the cover 13 and the top plate 16 must be 5 mm or less, so if the gap s2 between the tip of the cover 13 and the wafer 10 is 1 mm, the sum of the thicknesses of the wafer 10 and the chuck 15 Must be 4 mm or less. Since it is desirable that the gap s3 is small, the thickness of the chuck 15 should be as thin as about 1.5 to 3 mm. If the thickness of the chuck 15 is set to 2 mm, the surface of the top plate can be lowered by 2 mm from the chuck holding surface on the wafer stage 14.

【0096】

Further, as shown in FIG. 25, if a slope 28 is provided on the side surface of the chuck 15 or on the step side surface between the chuck holding surface and the top plate surface on the wafer stage 14, the flow of purge gas hitting these side surfaces becomes smoother. It will come out to the upper part of the wafer 10 and will be purged better. The cross-sectional shape of the slope is not limited to one diagonal line, and may be a combination of a plurality of curved lines, horizontal lines, vertical lines, and diagonal lines, and a shape in which the depth gradually decreases and the flow is easy to flow is desirable.

【0097】

(Example 8) In Examples 1 to 7 described above, the top plate 16 and the wafer stage 14 may be an integral member or a separate member, if necessary, and the chuck 15 and the wafer stage 14 may also be used. It may be an integral member, and the same effect can be obtained.

【0098】

Further, in the above embodiment, the inside of the cover 13 is purged by a plurality of nozzles 11, but the present invention is not limited to this, and various configurations are possible without departing from the spirit of the present invention. For example, the supply port into which the purge gas is blown may also serve as a part or all of the cover of the present invention. Specifically, of the four wall surfaces in the plan view of the cover 13, the entire wall surfaces of the two opposing sides serve as supply ports for blowing the purge gas, and the purge gas may be opposed to each other and supplied to the inside of the cover 13. The facing direction may be the scanning direction or the direction orthogonal to the scanning direction. Alternatively, the wall surface of one of the two opposing sides may be a supply port for blowing purge gas, and the wall surface of the other side may be a recovery port for exhausting purge gas. Further, the wall surfaces of the remaining two sides other than the two sides used as the supply port or the recovery port may be replaced with an air curtain of purge gas ejected by an air curtain nozzle similar to the nozzle 11. Further, all four sides may be used as supply ports. Further, all four sides may be replaced with an air curtain, and purge gas may be blown into the inside of the air curtain with a nozzle 11 to purge.

【0099】

Further, in the above embodiment, the nozzle 11 is provided inside the projection optical system 9, but it may be attached to the outside of the projection optical system 9 together with the cover 13, or it may be suspended from a surface plate supporting the projection optical system 9. It may be attached as follows.

【0100】

Further, in the above embodiment, the step-and-scan type projection exposure apparatus has been described, but even in the step-and-repeat type projection exposure apparatus (stepper, etc.), when the shot of the outer peripheral portion of the wafer is exposed. The present invention can be applied to the above, because the groove-shaped gap 17 moves from the outside to the inside of the cover opening 18 and stands still for exposure.

【0101】

Further, in the above-described embodiment, purging of the peripheral portion of the wafer is described, but the present invention is not limited to this. The present invention described above may be appropriately applied when purging the peripheral portion of the reticle.

【0102】

<Embodiment of Semiconductor Production System> Next, an example of a production system for semiconductor devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin film magnetic heads, micromachines, etc.) will be described. This is to provide maintenance services such as troubleshooting, regular maintenance, and software provision of manufacturing equipment installed in a semiconductor manufacturing factory using a computer network outside the manufacturing factory.

【0103】

Figure 31 shows the entire system cut out from a certain angle. In the figure, 101 is a business establishment of a vendor (equipment supplier) that provides manufacturing equipment for semiconductor devices. As an example of the manufacturing equipment, semiconductor manufacturing equipment for various processes used in a semiconductor manufacturing factory, for example, pre-process equipment (exposure equipment, resist processing equipment, lithography equipment such as etching equipment, heat treatment equipment, film forming equipment, flattening) Equipment, etc.) and post-process equipment (assembly equipment, inspection equipment, etc.) are assumed. The office 101 is provided with a host management system 108 that provides a maintenance database for manufacturing equipment, a plurality of operation terminal computers 110, and a local area network (LAN) 109 that connects these to build an intranet. The host management system 108 includes a gateway for connecting the LAN 109 to the Internet 105, which is an external network of the business establishment, and a security function for restricting access from the outside.

【0104】

On the other hand, 102 to 104 are manufacturing factories of semiconductor manufacturers as users of manufacturing equipment. The manufacturing factories 102 to 104 may be factories belonging to different manufacturers, or may be factories belonging to the same manufacturer (for example, a factory for a front-end process, a factory for a back-end process, etc.). Within each factory 102 to 104, there are a plurality of manufacturing devices 106, a local area network (LAN) 111 that connects them to build an intranet, and host management as a monitoring device for monitoring the operating status of each manufacturing device 106. A system 107 is provided. The host management system 107 provided in each factory 102 to 104 includes a gateway for connecting LAN 111 in each factory to the Internet 105, which is an external network of the factory. As a result, the host management system 108 on the vendor 101 side can be accessed from the LAN 111 of each factory via the Internet 105, and access is permitted only to a limited number of users by the security function of the host management system 108. Specifically, the factory side notifies the vendor side of the status information (for example, the symptom of the manufacturing device in which the trouble has occurred) indicating the operating status of each manufacturing device 106 via the Internet 105, and responds to the notification. It is possible to receive response information (for example, information instructing how to deal with a trouble, software and data for dealing with it), and maintenance information such as the latest software and help information from the vendor side. The communication protocol (TCP / IP) generally used on the Internet is used for data communication between each factory 102 to 104 and vendor 101 and data communication on LAN 111 in each factory. Instead of using the Internet as an external network outside the factory, it is also possible to use a highly secure leased line network (ISDN, etc.) that cannot be accessed by a third party. In addition, the host management system is not limited to the one provided by the vendor, but the user builds a database and places it on the external network.

【0105】

By the way, FIG. 32 is a conceptual diagram showing the entire system of the present embodiment cut out from an angle different from that of FIG. 31. In the previous example, multiple user factories, each equipped with manufacturing equipment, and the management system of the vendor of the manufacturing equipment are connected by an external network, and production control of each factory or at least one unit is performed via the external network. It was for data communication of information on manufacturing equipment. On the other hand, in this example, a factory equipped with manufacturing equipment of a plurality of vendors and a management system of each vendor of the plurality of manufacturing equipment are connected by an external network outside the factory, and maintenance information of each manufacturing equipment is obtained. It is for data communication. In the figure, 201 is a manufacturing factory of a manufacturing equipment user (semiconductor device manufacturer), and the manufacturing line of the factory is a manufacturing equipment that performs various processes, and here, for example, an exposure device 202, a resist processing device 203, and a film forming processing device. 204 has been introduced. Although only one manufacturing factory 201 is drawn in FIG. 32, in reality, a plurality of factories are similarly networked. Each device in the factory is connected by LAN206 to form an intranet, and the operation of the production line is controlled by the host management system 205. On the other hand, each office of the vendor (equipment supply manufacturer) such as exposure equipment manufacturer 210, resist processing equipment manufacturer 220, and film formation equipment manufacturer 230 is equipped with a host management system 211,221,231 for remote maintenance of the supplied equipment. They include a maintenance database and an external network gateway as described above. Host management system 205 that manages each device in the user's manufacturing plant and management system 211,221, of the vendor of each device. The 231 is connected to the external network 200 by the Internet or a dedicated line network. In this system, if a problem occurs in any of the manufacturing equipment in the production line, the operation of the production line will be stopped, but the vendor of the equipment in which the trouble has occurred will perform remote maintenance via the Internet 200. As a result, quick response is possible and downtime of the production line can be minimized.

【0106】

Each manufacturing device installed in a semiconductor manufacturing factory is equipped with a display, a network interface, and a computer that executes network access software and software for operating the device stored in the storage device. The storage device is an internal memory, a hard disk, a network file server, or the like. The network access software includes a dedicated or general-purpose web browser, and provides a screen user interface on the display, for example, as shown in FIG. 33. The operator who manages the manufacturing equipment at each factory refers to the manufacturing equipment model (401), serial number (402), trouble subject (403), occurrence date (404), urgency (405), and so on. Enter information such as symptom (406), remedy (407), and progress (408) in the input items on the screen. The entered information is sent to the maintenance database via the Internet, and the appropriate maintenance information as a result is returned from the maintenance database and presented on the display. In addition, the user interface provided by the web browser further realizes the hyperlink function (410 to 412) as shown in the figure, allowing the operator to access more detailed information on each item and use it for manufacturing equipment from the software library provided by the vendor. You can pull out the latest version of the software, or you can pull out the operation guide (help information) to be used as a reference for the factory operator. Here, the maintenance information provided by the maintenance database also includes information regarding the features of the present invention described above, and the software library also provides the latest software for realizing the features of the present invention.

【0107】

<Semiconductor Device Manufacturing Process Embodiment> Next, a semiconductor device manufacturing process using the production system described above will be described. Figure 34 shows the overall manufacturing process flow of a semiconductor device. In step 1 (circuit design), the circuit of the semiconductor device is designed. In step 2 (mask production), a mask with the designed circuit pattern is produced. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called the pre-process, and the actual circuit is formed on the wafer by the lithography technique using the mask and the wafer prepared above. The next step 5 (assembly) is called a post-process, which is a process of forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), and the like. Including the process. In step 6 (inspection), inspections such as operation confirmation test and durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7). The pre-process and the post-process are performed in separate factories dedicated to each, and maintenance is performed for each of these factories by the remote maintenance system described above. In addition, information for production control and equipment maintenance is also data-communicated between the front-end factory and the back-end factory via the Internet or a dedicated line network.

【0108】

FIG. 35 shows the detailed flow of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), electrodes are formed on the wafer by thin film deposition. In step 14 (ion driving), ions are driven into the wafer. In step 15 (resist treatment), a photosensitizer is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), the part other than the developed resist image is scraped off. In step 19 (resist peeling), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented and quick recovery is possible even if troubles occur. Productivity can be improved.

【0109】

[Effect of the invention]

As described above, according to the present invention, it is possible to partially and effectively purge the oxygen and water concentrations in the vicinity of the wafer. As a result, sufficient transmittance and stability of the exposure light can be obtained, exposure can be performed with high accuracy, and a fine circuit pattern can be projected satisfactorily.

[Simple explanation of drawings]

[Figure 1]

It is a schematic block diagram of the projection exposure apparatus which concerns on one Example of this invention.

[Figure 2]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 1st Example of this invention.

[Fig. 3]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 1st Example of this invention.

[Fig. 4]

It is a schematic plan view near the wafer of the projection exposure apparatus which concerns on 1st Example of this invention.

[Fig. 5]

It is a partially enlarged three-dimensional view of the vicinity of the wafer of the projection exposure apparatus according to the first embodiment of the present invention.

[Fig. 6]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 1st Example of this invention.

[Fig. 7]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 2nd Embodiment of this invention.

[Fig. 8]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 2nd other embodiment of this invention.

[Fig. 9]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 2nd other embodiment of this invention.

[Fig. 10]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 3rd Example of this invention.

[Fig. 11]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 3rd Example of this invention.

[Fig. 12]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 3rd Example of this invention.

[Fig. 13]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 4th Embodiment of this invention.

[Fig. 14]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 5th Embodiment of this invention.

[Fig. 15]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 6th Embodiment of this invention.

[Fig. 16]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 6th Embodiment of this invention.

[Fig. 17]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 6th Embodiment of this invention.

[Fig. 18]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 6th Embodiment of this invention.

[Fig. 19]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 6th Embodiment of this invention.

[Fig. 20]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 6th Embodiment of this invention.

[Fig. 21]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 6th Embodiment of this invention.

[Fig. 22]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 6th Embodiment of this invention.

[Fig. 23]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 7th Example of this invention.

[Fig. 24]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 7th Example of this invention.

[Fig. 25]

It is a schematic block diagram of the vicinity of the wafer of the projection exposure apparatus which concerns on 7th Example of this invention.

[Fig. 26]

It is explanatory drawing of the projection exposure apparatus which concerns on Example.

[Fig. 27]

It is explanatory drawing of the vicinity of the wafer of the projection exposure apparatus which concerns on embodiment.

[Fig. 28]

It is explanatory drawing of the vicinity of the wafer of the projection exposure apparatus which concerns on embodiment.

[Fig. 29]

It is explanatory drawing of the vicinity of the wafer of the projection exposure apparatus which concerns on embodiment.

[Fig. 30]

It is explanatory drawing of the vicinity of the wafer of the projection exposure apparatus which concerns on embodiment.

[Fig. 31]

It is a conceptual diagram which looked at the production system of a semiconductor device from a certain angle.

[Fig. 32]

It is a conceptual diagram which looked at the production system of a semiconductor device from another angle.

[Fig. 33]

This is a concrete example of the user interface.

[Fig. 34]

It is a figure explaining the flow of the manufacturing process of a device.

[Fig. 35]

It is a figure explaining the wafer process.

[Explanation of symbols]

1 Illumination optics 2 nozzles 3 Purge gas flow 4 cover 5 sheet glass 6 reticle 7 Reticle stage 8 Top plate 9 Projection optics 10 wafers 11 nozzle 12 Purge gas flow 13 cover 14 Wafer stage 15 chuck 16 Top plate 17 Groove-shaped gap 18 Cover opening 19 Cover edge 20 Flow extruded from cross-sectional area A2 21 Ventilation holes 22 opening 23 Airflow 24 ~ 25 slopes 26 Supply port 27 Ventilation holes 28 slope 29 1st shot