Mechanism for uniform etching by minimizing effects of etch rate loading

Description: TECHNICAL FIELD [Detailed description of the invention]

Uniform etching mechanism that minimizes the etch rate loading effect Background of the invention The present invention relates to the manufacture of semiconductor integrated circuits (ICs). More specifically, the present invention A method capable of uniformly etching a part of a wafer including an IC laminate and Regarding the device. In semiconductor IC manufacturing, devices such as transistor elements are semiconductor wafers or It is formed on a substrate, typically a silicon wafer or substrate. .. A large number of layers are formed on the wafer, and the device is manufactured from these layers. C A metal connection is formed by etching the metal layer formed on the eh. Subsequently, the desired circuit is formed by connecting this metal connection to each device. To. To simplify this discussion, the multiple layers that make up a typical semiconductor IC in Figure 1? The cross section of the laminated body 20 is shown. In the discussion below, on top of the multiple layers illustrated It should be noted that there may be additional layers below or between layers. In addition Not all of the layers shown are necessarily required, and some or all are replaced by another layer. It may have been done. A wafer 100 is illustrated on the bottom of the laminate 20. Oxide layer 102, Typically SiO₂A layer composed of is formed on the wafer 100. Ba Rear layer 104, typically a titanium-containing layer consisting of Ti, TiW, TiN, etc. or others A layer made of the suitable barrier material of is laminated next to the oxide layer 102. It is arranged between the metal layer 106 and the metal layer 106. If the barrier layer 104 is provided, the barrier layer 104 is provided. The rear layer is a layer that prevents the diffusion of silicon atoms from the oxide layer 102 to the metal layer. Function. The metal layer 106 is typically, for example, copper, aluminum, or Al-Cu. , For any one of known aluminum alloys such as Al-Si or Al-Cu-Si Consists of. In addition, the remaining two layers in FIG. 1, namely the antireflection coating (ARC) layer 108 and its The photoresist (PR) layer 110, which is the upper layer of the metal layer 106, is formed on the metal layer 106. To. Another titanium consisting of ARC layer 108, typically TiN or TiW, etc. The containing layer reflects and scatters from the surface of the metal layer 106 (eg, photoresist). It assists in blocking light (in the turn-processing lithography process). In some cases, it prevents hillock growth. Photoresist layer 110 Is a single layer made of conventional photoresist material, for etching, for example For example, a pattern is formed by irradiation with ultraviolet rays. Each layer of the laminate 20 is a person skilled in the art. There are many suitable and known thin film forming methods that are easily understood by the public. It is possible to form by using the deviation. Chemistry as such a method Deposition method (CVD), plasma excitation chemical vapor deposition (PECVD), sputtering, etc. Physical vapor deposition (PVD) can be mentioned. A part of the layers constituting the laminate, that is, the metal layer, in order to form the metal connection. A portion of which contains a metal layer such as 106 is due to suitable photoresist technology. Etched. For example, as such a photoresist technology, contact Exposure of photoresist material in a stepper or stepper lithography system In order to form a mask that facilitates the next step, etching, the photore A pattern forming technique for the photoresist layer 110, which comprises the process of developing the gist material. There is a technique. Covered with a mask in the metal layer by the use of a suitable etching solution Areas that are not etched are removed and metal connections or features es) remains. For the sake of explanation, in the laminated body 20 according to FIG. Figure 2 shows the cross section after the hatching is completed. In this example, the metal connection is metal Corresponds to the non-etched portion of layer 106. Modern IC circuits are becoming more and more sophisticated in order to achieve higher circuit densities. It is reduced proportionally according to the design rules. As a result, the feature size, ie , The width of the connections or the spacing between adjacent connections (eg grooves) is steadily shrinking. To. For example, 4 megabit (Mb) dynamic random access memory (DRAM) ) In IC, a line width of about 0.8 micron (μm) is said to be suitable. , 0.25 micron or less for 256Mb DRAM ICs It is preferable to use a wire having a fineness. Uniform etching over the entire wafer as the feature size shrinks It gets harder and harder to get speed. The uniformity at the etching rate is At least part of it is governed by the type of chemical properties used for ching Is. In the prior art, chemical properties based on etching agents and inhibitors are used. Etching was performed. Etching agent is the actual etching or material It is for removal. Inhibitors, typically polymer molding compounds Contributes to a decrease in the speed of the etching process. Use polymer molding agent By doing so, fine shielding of a wider space, that is, in a narrow interline area. It is believed that a polymer mask is formed in the open region at a much faster rate. As a result, the etching rate in the open region is low in the narrow interline region. It is thought that the etching rate is lower than the etching rate. In conventional etching methods, etching of metal layers is typically a single chemical feature. It depended on sex. This single chemical property of etching includes etching. In some cases, the effect of the agent is dominant, and in other cases, the effect of the inhibitor is dominant. D Etching rate in narrow line-to-line areas if the effect of the etching agent is dominant Is generally larger. Wider open if inhibitor effect is dominant The etching rate in the region is generally high. Etching rate in narrow line-to-line regions is wider in open field regions The phenomenon that tends to be smaller than the etching rate in It is called natural etching rate laoding. On the other hand, the etching rate in a wider open field region is narrower. Reverse etch ray when it tends to be lower than the etching rate in the inter-region Called reverse etch rate loading Bu. Forward etch rate loading depends on microloading and aspect ratio Aspect ratio dependent etchin It is the result of g; ARDE). Microloading is a region with high line spacing. Etching rates in the region of the same magnitude located in the less dense region It mainly means a situation in which the etching rate in the groove is smaller than the etching rate. On the other hand, it differs from ARDE in a plurality of grooves located in similar groove density regions. It mainly means the situation where the etching rate fluctuates among multiple grooves with aspect ratios. It is a thing. Grooves pile up at different speeds due to loading related to etching speed It will be formed in layers. Groove width is about 0.5 micron or less, especially about 0.35 When reduced to less than a micron, the loading related to the etching rate is more It tends to be noticeable. Etching speed is low as a result of fluctuating etching speed Before the metal etching is completed in the area (for example, the area where the line spacing is narrow) Overetching, that is, random removal of material from the underlying layer, is the etching rate. May have already occurred in a large area (for example, open field area) To. With respect to FIG. 2, region 120 is overetched by the metal layer (distance dl only). Represents an open field region, where region 122 has a metal layer (distance d2 only) It shows a narrow line-to-line region that has been under-etched. Sequential etch rate low If the fluctuation related to the ding is large enough, for some shapes, Narrower lines before excessive damage to the underlying layer in the Punfield area It is not possible to complete the etching of the target layer, eg the metal layer, in the interstitial region Noh. As an example, IC manufacturing due to large fluctuations in etching rate. The wafer will be subjected to an unfavorable treatment for use in Area 1. Unreasonable overetching and excessive oxide damage at 20 To. Here, referring to FIG. 3, the inverse etch rate in a typical semiconductor IC laminate The phenomenon related to loading is shown. Region 120 has a metal layer (distance d3) ) Shows under-etched open field area, area 122 is gold The genus layer shows a narrow line-to-line region overetched (distance d4 only). If the variation in etching rate is large enough, for some shapes Open feel before excessive damage to the underlying layer in narrow interline areas It is not possible to complete the etching of the target layer in the region. Both of these effects result in non-uniform etching and are desirable. The fact that it is not a bad thing is understandable to those skilled in the art. like this What is desired from the viewpoint is the forward etch rate loading effect in IC manufacturing. And uniform IC laminate by minimizing the reverse etch rate loading effect It is a method of etching. Outline of the invention The present invention uniformly etches a laminated structure on a substrate on one surface thereof. Regarding the method. The method has chemical properties that induce reverse etch rate loading. It includes a step of etching the laminate to a predetermined stop point by using it. is there. In addition, the forward etch rate loading chemistry is utilized in the laminate structure. It also includes a step of etching the laminate including the target layer. The method further utilizes the third chemical property to form the first underlying layer beneath the target layer. It also includes the step of hatching. The third chemical property is that the first base layer is etched. And, etching is preferably performed before the oxide layer under the first base layer is etched. Used to stop. Reverse etch rate loading-induced chemical properties, etchant and selective inhibition The component is a mixture of agents. Inhibitors reverse etch rate loading It is present in the mixture in an amount sufficient to induce it. Etching agent is Cl₂Or science fiction₆Containing, the inhibitor is basically N₂, BCl₃, CHF₃And fluorine content It comprises one or more selected from the group composed of compounds. Reverse Etchrate loading-induced chemical properties are further compounded to limit ion scattering Consists of chemicals such as heavy halogen compounds, chlorofluorocarbons, argon or other rare gases Let it be an element. Forward etch rate loading chemical properties are a mixture of etchants and inhibitors The compound is a component. Etching agent results in forward etch rate loading It is present in the mixture in a sufficient amount. Forward etch rate loading chemistry In the same way as the reverse etch rate loading chemistry, the etchant Cl₂.. Or SF₆The inhibitor is basically N₂, BCl₃, CHF₃And one or more selected from the group consisting of fluorine-containing compounds Is included. Forward etch rate loading chemistry further reduces ion scattering Consists of chemicals to limit, such as heavy halogen compounds, freons or rare gases It is a component. The above and other features of the present invention will be described in detail of the following invention with reference to the accompanying drawings. It will be described in more detail in the above description. A brief description of the drawing Figure 1 shows the multiple layers formed during the manufacture of a typical semiconductor integrated circuit (IC) device. It is sectional drawing which shows the laminated body. FIG. 2 shows the forward etch rate loading effect in the laminate according to FIG. It is a top view. FIG. 3 shows the reverse etch rate loading effect in the laminate according to FIG. It is a top view. FIG. 4 shows a plasma preferably used in the uniform etching method according to the present invention. It is a simplified schematic diagram which shows the reaction apparatus. FIG. 5 shows, in one aspect of the present invention, the work included in the uniform etching method of the present invention. It is a figure which shows the degree. FIG. 6 utilizes the reverse etch rate loading chemistry in one embodiment of FIG. It is a figure which shows the process of etching the laminated body which concerns on. FIG. 7 utilizes forward etch rate loading chemistry in one embodiment of FIG. It is a figure which shows the process of etching the laminated body which concerns on. Detailed description of preferred embodiments The present invention achieves uniform etching when etching an IC laminate. It is described about. In the following description, as the present invention is clearly understood. , Many specific details are illustrated. However, the present invention describes these specific details. It is self-evident to those skilled in the art that it can be carried out in whole or in part. That's what it is. Also, in a few other cases, the invention is not unnecessarily obscured. Therefore, detailed explanations of known process steps have been avoided. According to one aspect of the invention, two different chemistries are used, for example, as shown in FIG. By etching a laminate such as an IC laminate, the above non-uniform etch It is possible to alleviate the problem related to the problem. On the other hand, the chemical property is reverse etch rate low. Ding chemical properties are preferably included, such chemical properties include, for example, chemistry. The inhibitor, which is a component of the property, supports more than the etching agent during the etching process. It shows the effect of distribution. Extensive open area etch by its properties alone The etching rate tends to be lower than the etching rate in a narrow line-to-line region. .. The other chemical property is preferably a chemical property that results in forward etch rate loading. Yes, such chemical properties are, for example, etching, which is a component of chemical properties. The agent exhibits a dominant effect over the inhibitor during the etching process. two Due to the complementary effect of chemical properties, the process according to the invention has a more uniform etch. It provides the results. The etching process based on the two chemical properties according to the present invention is a known plasma process. It can be carried out by any of the physical devices, such as Delahaye. Thatching, plasma etching, reactive ion etching (RIE), magnetically strengthened anti It is possible to use a device suitable for reactive ion etching (MERIE) and the like. Further In detail, in a typical plasma processing chamber suitable for dry etching. The wafer is then processed by plasma. This processing room has an entrance and this Gas, which is an etching source, is supplied to the processing chamber through the inlet. Suitable RF An energy source, for example, one RF energy source, is applied to the electrodes attached to the processing chamber. And plasma is induced. As is known, the energy itself uses plasma. Inducible or capacitive binding to maintain. Then react with the wafer Seeds are generated from the etching source gas and come into contact with the plasma in the wafer laminate Layer is etched and removed. Subsequently, volatile by-products are exhausted from the outlet port. To. In plasma etching, the wafer is an anode, that is, a grounding force during wafer processing. It is related to the state of being located at the highest level. On the other hand, reactive ion etching (RIE) ) Depends on the state in which the wafer is located on the cathode, that is, the applied electrode, during processing. It is. Magnetically enhanced reactive ion etching (MERIE) is a RIE reactor It is a deformed shape that reduces the loss of active electrons on the wall surface of the reactor. Therefore, a magnetic field is applied. Under certain conditions, the MERIE reactor , Known to increase the efficiency of energy propagation from electrodes to electrons in plasma ing. The present invention is in any of the above reactors and other suitable plasma processing devices. Is also intended to be feasible. The energy given to the plasma Electron cyclotron resonance (ECR), even with capacitively coupled parallel electrode plates Even if it is based on a microwave plasma source, for example, a helicopter or a helical resonant device Due to inductively coupled RF sources such as inductively coupled plasma (TCP) However, it should be noted that the above-mentioned intention is embodied. In particular, ECR and T The plasma processing system by CP is Lam Research in Fremont, California. From Corporation (Lam Research Corporation) Available. In one preferred embodiment, the present invention is a TCP (trade name) 9600SE plasma counter. It is carried out in the response device. This device is available from Lam Research Corporation However, as described above, any suitable conventional plasma processing system can also be preferably used. Can be done. Figure 4 simplifies the TCP (trade name) 9600SE plasma reactor. The wafer 350 and the integrated circuit chip 352 are also drawn. The In the integrated circuit chip, the wafer is etched by the etching method of the present invention, and further. After being processed by a conventional post-etching process, the wafer 350 is cut into dice. It is manufactured by doing so. According to FIG. 4, the wafer reactor 300 Uses the plasma processing chamber 302 as a component. Electrode 3 on the processing chamber 302 03 is arranged and the electrode is a coil in the example of FIG. Coil 303 is To RF generator 305 via a hatching network (not shown in Figure 4) More applied. A shower head 304 is provided in the processing chamber 302, and the head is A gaseous raw material, eg, into the RF-induced plasma region between the head and the wafer 350. For example, it preferably has a large number of holes for discharging the etching source gas. Also, moth The slag-like material may be released from a port built into the wall of the processing chamber itself. Way C 350 is introduced into the processing chamber 302 and placed on the chuck 310. The cha The hook functions as a second electrode (again, typically a matching electrode). Biased by radio frequency generator 320 (via network) Is preferable. Helium cooling gas is under pressure (eg about 5 in some embodiments) ~ 10 Torr) introduced between chuck 310 and wafer 350 It also functions as a heat transfer medium that accurately controls the wafer temperature during the processing process. As a result, uniform and repeatable etching results can be obtained. To. During the plasma etching process, the pressure in the processing chamber 302 is kept low. For example, in some embodiments it is about 8-22 m Torr. To. Maintain a processing chamber temperature suitable for etching (eg, about 70 ° C in some embodiments). Numerous heating devices to hold (omitted in Figure 4 for simplification of drawings) May be attached. The processing chamber wall of processing chamber 302 is typical to provide a grounding path. Is grounded to. FIG. 5 shows, in one aspect of the present invention, an etch due to the two chemical properties according to the present invention. It shows the process included in the process. In step 500, the wafer Prepared for etching by conventional pre-etching steps. Pre-etching process For example, clamping the wafer onto the chuck, low pressure in the plasma processing chamber. Back side of wafer to facilitate constant operation and heat transfer between wafer and chuck It includes the introduction of helium gas for cooling into. Naturally, before these etchings The process is suitable when one plasma reactor is adopted and is suitable for those skilled in the art. As it is self-evident, if different types of reactors are used, the pre-process. Is also different. In step 502, the first conversion, including the reverse etch rate loading chemistry. Academic properties start on the upper surface of the laminate and are favorable to a predetermined stop point inside the laminate. Appropriately used. The predetermined stop point in step 502 is the target layer. That is, it may be above the target layer for etching. Already discussed As such, the reverse etch rate loading chemistry is basically the same as that of the target layer. Depends on a mixture containing etchants and inhibitors suitable for hatching. Reverse etch Inhibitors in loading chemical properties dominate over etchants It is preferably present in a sufficient amount to indicate, and as a result, a narrow interline area. Etching in the region progresses faster than etching in the open region To do. In one aspect, the target layer is an aluminum-containing layer. Inhibitor is N₂, BCl₃, CHF₃And less selected from the group consisting of any fluorine-containing compound Includes at least one or more. Etching agent is Cl₂Or SF₆To Including. To promote the clogging of ion scattering in the etching process The reverse etch rate loading chemistry in step 502 is further increased, for example, by heavy c. Diluted chemicals such as chlorofluorocarbons, freons or rare gases may be components I. This diluent also contributes to the physical impact on the plasma and therefore the solution of the plasma. It contributes to the improvement of the degree of separation. In step 504, a second chemistry that includes forward etch rate loading chemistry. Etching that makes good use of the properties includes at least a part of the target layer. It progresses in the rest of the layer. However, forward etch rate Etching utilizing loading chemistry proceeds within the target layer Is preferable. For example, if the target layer is a metal layer in the laminate Etching due to forward etch rate loading chemistry proceeds within the metal layer It is preferable that the oxide layer is reached before the process is completed. Ta The gett layer is of course any layer, eg polysilicon or oxidation with a suitable underlying layer. It should be noted that it may be a thing. In one aspect, the forward etch rate loading chemistry is the reverse etch rate. Components with etching agents and inhibitors similar to those in loading chemistry However, the amount of inhibitor in the forward etch rate loading chemistry The ratio of the amount of etchant to to etchant in the inverse etch rate loading chemistry It tends to be larger than the amount ratio. For reverse etch rate loading chemistry Etching agents in the area occupy a sufficient amount to show a dominant effect over inhibitors. It is preferable to be present, and as a result, the etching in the open region is narrow. It is possible to proceed at a higher speed than the interline region. In one embodiment, the etchant is Cl₂Or SF₆Contains. Inhibitors N₂, BCl₃, CHF₃And any fluorine-containing compound selected from the group Includes one or more. Inverse etch rate loading chemistry As in the case of squeezing, it promotes the clogging of ion scattering in the etching process. Therefore, the forward etch rate loading chemistry in step 504 is, for example, heavy. Diluted chemicals such as halogen compounds, freons or rare gases can also be components Good. Utilizing the reverse etch rate loading chemistry as in step 502, for example. Following the etching to be performed, for example, in step 504, the forward etching rate rode Etching utilizing wing chemistry has a wide open field area and a narrow area It tends to produce a complementary effect that balances the synthetic etching rate with the interline region. Uses reverse etch rate loading chemistry at a lower rate than narrow interline regions Extensive open area hatched followed by forward etch rate loading Etching is performed at a higher speed than the narrow line-to-line region by utilizing the scientific characteristics. In this way The two chemistries utilized are the desired, more uniform synthetic etching. It provides speed, and such uniform etching is an example step 502. And 504. The method according to the invention is performed before performing forward etch rate loading chemistry. Not limited to performing reverse etch rate loading chemistry That is self-evident to those skilled in the art. The two chemistries are used in reverse order Is also good. That is, the forward etch rate loading chemistry is used first, and the reverse d. Etching due to the chip rate loading chemistry may follow. Further, the present invention provides an etchant for a metal target layer, more specifically a specific target layer. It is specifically stated that it is not limited to the above. In addition, the present invention is a multilayer laminate. Although discussed with respect to, the present invention relates to reverse etch rate loading-induced chemistry. Etch single layer using sex and forward etch rate loading chemistry in a separate process Clarify that it can be used even when it is used. In other words, in that case Laminates are single targets to be etched by two etching steps It consists of a layer. The etching technique based on the two chemical properties according to the present invention can be applied to an arbitrary target layer. Those skilled in the art to obtain a more uniform synthetic etching rate when etching. Can be preferably used. Certain specifics such as polysilicon or oxides Reverse etch rate loading is induced for the target layer and forward etchray Certain chemical properties required for the loading effect to occur are one of ordinary skill in the art. It can be selected by the relevant vendor based on the general knowledge. In step 506, shown in FIG. 5, the wafer is subjected to conventional additional etching. Presented to the post-treatment process. After that, the finished wafer is cut into dice. , IC chip is born. The obtained IC chip, for example, the IC chip in FIG. The 352 then optionally includes electronic engineering equipment such as digital computers. It can be incorporated into known industrial or consumer electronics equipment. Figure 6 shows (etching the target layer to form metal connections) in Figure 5. The steps included in the step 502 are shown in another embodiment. Related to Figure 6 In one embodiment, the target layer includes a metal layer, which is the metal layer. In the field, it includes copper, aluminum and aluminum alloys, It is not limited to these. In step 602, the reverse etch rate loading chemistry is utilized to make gold. The laminate etches to a predetermined stop point through the ARC layer, which is the upper layer of the genus layer. Be hung. In some embodiments, the predetermined stop points are the metal layer and the ARC layer. It exists near the interface with. In other embodiments, the predetermined stop point is It is located inside the ARC layer or inside the metal layer. The ARC layer includes, for example, a material consisting of TiN, TiW or mainly titanium. It is a thing. In some embodiments, the antireflection layer is constructed of TiN and is at the stop point. Detection is not by optically monitoring the generation of the 703 nm wavelength in the plasma. Is done. This number indicates that virtually all TiN anti-reflective layers have been removed. Is. Etching may be completed shortly thereafter, or TiN Predetermined time, eg addition, to ensure complete removal of anti-reflective layer material It may be extended for 5 seconds. Etch due to this first chemical property Other conventional methods are also useful as a method for determining the stop point in the running process. It can be used. As an example, reverse etch rate loading in etching TiN anti-reflective layer Induced chemical properties are, for example, Cl₂/ N₂, Cl₂/ N₂/ Ar, Cl₂/ Ar, C l₂/ N₂/ HCl, Cl₂/ HCl, Cl₂/ N₂/ CHF₃, Cl₂/ CHF₃as well as Cl₂/ Ar / CHF₃It is composed of any one of the groups consisting of. C l₂/ Ar / CHF₃Ar in, like helium, krypton, cannon, etc. It may be replaced by another rare gas. Also Cl₂/ Ar / CHF₃Is the other It also brings advantages, and for details, see the simultaneous pendency by the transferee. "Etching method for semiconductor wafers" filed on February 15, 1996, which is a licensed application. And equipment (Methods and MFP for Etchi) ng Semiconductor Wafers) (agent reference number P210 / LAMP014), and this application is taken as reference material here. Raise up. FIG. 7 shows another aspect of step 504 according to FIG. Related to Figure 7 In one embodiment, the target layer is a metal layer that etches the metal target. One of the chemistries is utilized for this, and if desired, the etching of the oxide layer is finished. If the underlying layer, such as the barrier layer, is etched before it is done, the other chemistry is selected. It is used selectively. In step 702, the target layer, eg aluminum or aluminium Forward etch rate loading chemistry is utilized to etch the gold layer To. As an example, Cl with a flow rate ratio of 70% / 20% / 10%, respectively.₂/ BCl₃/ CHF₃Aluminum alloy metal layer where the mixture contains about 0.5% to 1% copper It has been confirmed that it is suitable for etching. In step 704, the underlying layer, eg, in some embodiments, the aluminum metal layer. Selective use of third chemistry to etch the underlying barrier layer Will be done. Etching due to this third chemical property results in etching of the oxide layer. The oxide layer is, in some embodiments, like the barrier layer. It is a further base layer of the first base layer. The third chemical property is the reverse etch rate rode Includes either wing chemistry or forward etch rate loading chemistry Either to obtain a uniform synthetic etching rate in the laminate It depends on the situation in which the chemistry is required. Example The parameters applicable to the etching of the illustrated laminate are shown in a plurality of tables below. Overview Calculated process parameters in TCP (trade name) 9600SE plasma reactor 6 wafers were evaluated. In this example, the metal coating layer was TiN. It is made of a reflective layer and is formed on an aluminum layer containing about 0.5% copper. Ta. In the table below, maximum output (W units), minimum output (W units), flow rate (especially cutoff) If there is no such thing, it can be roughly applied as a percentage of the total flow rate of the etching source. The effective range, the estimated preferable range, and the estimated more preferable range are shown. Etch Other parameter values that are useful for the wafer are related to the same wafer and anti-reflection layer as in this example. However, different wafers and anti-reflection layers are also obvious to those skilled in the art. I think that the. Tables 1 and 2 show the approximate parameters that can be used in step 502. Ma In Tables 1 and 2, Cl₂/ N₂And Cl₂/ Ar / CHF₃Reverse d by Applicable for etching processes that utilize chelate loading chemistry Approximate parameters are shown. Tables 3 and 4 show an overview of what can be used in step 504. Arithmetic parameters are shown. In Tables 3 and 4, Cl is shown.₂/ N₂And Cl₂/ Ar / CHF₃Etch that utilizes the forward etch rate loading chemistry by Applicable approximate parameters are shown for the running process. The approximate process parameters shown here are the TCP (trade name) 9600SE. Generally suitable for etching 6 inch wafers in plasma reactors It is a thing. When etching substrates of different sizes or specific plasma reactions If the device needs to be used, evaluate the parameters and according to their circumstances / Or it is clear that it can be modified and is within the scope of knowledge possessed by those skilled in the art. is there.<img file="JP2000511358A_D0001.tif" /><img file="JP2000511358A_D0002.tif" /><img file="JP2000511358A_D0003.tif" /><img file="JP2000511358A_D0004.tif" /> The present invention has been described above with respect to some preferred embodiments, but within the scope of the present invention. There are also inclusion alternatives, modifications and equivalents. Embodying the method and device according to the present invention It should also be noted that there are a number of alternatives to becoming. Therefore, the scope of the attached claims is , Including all alternatives, modifications and equivalents included in the spirit and scope of the invention. It is intended to be interpreted as.