Semiconductor device and manufacture thereof

Description: TECHNICAL FIELD [Detailed description of the invention]

【0001】

[Technical field to which the invention belongs]

The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. In particular, the present invention relates to a semiconductor device that is smaller and thinner and has higher stability, and a method for manufacturing a semiconductor device with high productivity.

[Conventional technology]

【0002】

In recent years, new forms of semiconductor devices have been developed one after another in order to meet the demands for higher functionality, smaller size, lighter weight, and higher speed of electronic devices.

【0003】

FIG. 6 shows a conventional transistor and its manufacturing process. After dicing the semiconductor chip 1 on the island 52 in the lead frame 51 as shown in FIG. 6 (a) (see FIGS. 6 (b) and 6 (c)), the inside of the lead frame 51. The lead 57 and the semiconductor chip 1 are wire-bonded by the bonding wire 53 (see FIG. 6 (d)). Next, the semiconductor chip 1 is sealed with the resin 55 and molded (see FIG. 6E), and then the resin material that has squeezed out and solidified on the front and back surfaces of the lead frame 51 is removed. Further, by cutting each individual semiconductor chip 1 and then performing lead molding, an individual transistor as shown in FIG. 6 (g) can be obtained.

【0004】

[Problems to be Solved by the Invention]

However, the conventional transistor shown in FIG. 6 has the following problems. In order to meet the recent demands for miniaturization and thinning of semiconductor devices as described above, in conventional transistors, the semiconductor chip is thinned by polishing the semiconductor wafer to reduce the thickness of the package. On the other hand, the conventional transistor is obtained by wire bonding the internal lead 57 in the lead frame 51 and the semiconductor chip 1 by wire bonding using the bonding wire 53, as shown in FIG. 6 (d). In this case, the portion other than the pad 59 bonded to the bonding wire 53 on the semiconductor chip 1 and the bonding wire 53 need to be insulated. Therefore, it is necessary to set the distance h between the upper surface of the semiconductor chip 1 and the bonding wire 53 so that at least the edge portion 58 of the semiconductor chip 1 does not come into contact with the bonding wire 53. Therefore, even if the package can be thinned to some extent by thinning the semiconductor chip 1 by polishing or the like, the portion other than the pad 59 bonded to the bonding wire 53 on the semiconductor chip 1 is in contact with the bonding wire 53. In order to prevent this, the distance between the upper surface of the semiconductor chip 1 and the bonding wire 53 must be longer than a predetermined length, which causes a problem that the size and thickness cannot be sufficiently reduced.

【0005】

Further, in the conventional transistor manufacturing process described above, a wire bonding process is used. In this wire bonding step, as shown in FIG. 6 (d), a huge amount of labor is required to bond the bonding wires 53 to the pads 59 provided on the semiconductor chips 1 one by one for each semiconductor chip 1. There was a problem that the manufacturing cost was high and the productivity was low. Similarly, there is an increasing demand for miniaturization and thinning of integrated circuits. Since the wire bonding process described above is used in the manufacturing process of the integrated circuit, the same problem has occurred.

【0006】

The present invention has been made in view of the above problems in the prior art. An object of the present invention is to provide a semiconductor device that is smaller and thinner. Another object of the present invention is to provide a method for manufacturing a semiconductor device having excellent productivity.

【0007】

[Means for solving problems]

The first invention of the present application provided to solve the above problems is a surface of a semiconductor chip mounted on a first base substrate via a metal bump, which is opposite to the mounting surface of the metal bump, and the first base. It is a semiconductor device characterized in that a second base substrate, which is separated from the substrate and is formed on the same surface as the first base substrate, is connected by a metal foil.

【0008】

According to the semiconductor device of the first invention of the present application having the above configuration, the opposite surface of the metal bump mounting surface of the semiconductor chip mounted on the first base substrate via the metal bump and the first base substrate. By connecting the second base substrate, which is separated from the first base substrate and formed on the same surface as the first base substrate, with a metal foil, it is not necessary to provide a gap on the upper surface of the semiconductor chip to prevent a short circuit. Therefore, the thickness of the entire semiconductor device can be reduced. On the other hand, in a conventional semiconductor device, as a result of connecting the semiconductor chip and the internal lead with a bonding wire, it becomes necessary to provide a gap on the upper surface of the semiconductor chip so that the semiconductor chip and the bonding wire do not come into contact with each other and short-circuit. It can be said that the semiconductor device according to the present embodiment can improve space efficiency as compared with the conventional semiconductor device.

【0009】

Further, in the second invention of the present application, the first base substrate and the second base substrate are separated and formed on the same surface, and the semiconductor chip is bonded onto the first base substrate via a metal bump, and then the semiconductor chip is bonded to the first base substrate. A method for manufacturing a semiconductor device, which comprises connecting a second base substrate and the opposite surface of the semiconductor chip to the metal bump mounting surface with a metal foil, depositing a resin, and then cutting the semiconductor chip in predetermined units. is there.

【0010】

In the conventional manufacturing process of a semiconductor device using a wire bonding method, a huge amount of labor is required in order to include a process of bonding bonding wires one by one to a pad provided on the semiconductor chip for each semiconductor chip. Devices such as a wire bonder used for the bonding, a die bonder used for positioning and mounting the semiconductor chip 1 on an island on a lead frame, and a molding device for molding with a resin are required. However, according to the method for manufacturing a semiconductor device of the second invention of the present application having the above configuration, the first base substrate and the second base substrate are separately formed on the same surface, and metal bumps are formed on the first base substrate. After joining the semiconductor chips with a metal foil, the second base substrate and the opposite surface of the semiconductor chip to the metal bump mounting surface are connected with a metal foil, and then the resin is deposited and then cut into predetermined units. As a result, a semiconductor device can be manufactured without using the device, so that investment in the device is not required, and a plurality of semiconductor chips and the corresponding first base substrate are collectively joined. Therefore, it is possible to improve the productivity and reduce the processing cost for joining, so that the manufacturing cost can be reduced. As described above, the productivity of the semiconductor device can be improved.

【0011】

Further, in the third invention of the present application, a plurality of first base substrates and second base substrates corresponding to the plurality of first base substrates are separated and formed on the same surface, and are formed on the plurality of first base substrates. After joining the semiconductor chips corresponding to the plurality of first base substrates to the semiconductor chips via metal bumps, a sheet on which the metal foil corresponding to the semiconductor chips is installed is formed on the metal foil and a pair of the semiconductor chips and the semiconductor chips. This is a method for manufacturing a semiconductor device, which is characterized in that it is installed so as to be in contact with a second base substrate, bonded in a batch, then a resin is deposited, and then the resin is cut in predetermined units.

【0012】

The second base substrate corresponding to the plurality of first base substrates referred to in the present application is primarily the second base substrate installed in the same number as the number of the plurality of first base substrates. To say. Further, the semiconductor chip corresponding to the plurality of first base substrates referred to in the present application primarily means the semiconductor chip in which the same number as the number of the plurality of first base substrates is installed. The metal foil corresponding to the semiconductor chip means the metal foil installed in the same number as the number of the semiconductor chips. Further, the fact that the metal foil is in contact with the pair of semiconductor chips and the second base substrate is primarily such that the semiconductor chip of 1 and the second base substrate of 1 are the same 1. It means to come into contact with metal foil. According to the method for manufacturing a semiconductor device of the third invention of the present application having the above configuration, a sheet on which a metal foil corresponding to the semiconductor chip is installed is placed on the metal foil, a pair of the semiconductor chip, and a second base substrate. By installing the semiconductor chips so that they are in contact with each other and joining them all at once, it is possible to join a plurality of semiconductor chips and the corresponding first base substrate at once, so that the processing cost for joining can be reduced. Therefore, productivity can be improved. Further, since the metal foil can be installed only at the minimum necessary positions on the semiconductor chip and the second base substrate, the risk of short circuit between the wirings can be reduced.

【0013】

Further, the fourth invention of the present application is formed by separating a plurality of first base substrates and a second base substrate corresponding to the plurality of first base substrates on the same surface, and forming the plurality of first base substrates on the plurality of first base substrates. After joining the semiconductor chips corresponding to the plurality of first base substrates to the semiconductor chips via metal bumps, one metal foil is placed on the semiconductor chips and the second base substrate to collectively join them, and then the bonding is performed. This is a method for manufacturing a semiconductor device, which comprises cutting the metal foil for each semiconductor chip, depositing a resin, and then cutting the metal foil in predetermined units.

【0014】

The second base substrate corresponding to the plurality of first base substrates referred to in the present application is primarily that the same number of the second base substrates as the number of the plurality of first base substrates are installed. To say. Further, the semiconductor chip corresponding to the plurality of first base substrates referred to in the present application means that the same number of semiconductor chips as the number of the plurality of first base substrates are installed. According to the method for manufacturing a semiconductor device of the fourth invention of the present application having the above configuration, one metal foil is placed on the semiconductor chip and the second base substrate and bonded together, and then for each semiconductor chip. By cutting the metal foil, a plurality of semiconductor chips and the corresponding first base substrate can be joined together, so that the processing cost required for joining can be reduced, and thus the productivity can be reduced. Can be improved. Further, by joining one metal foil to a plurality of semiconductor chips and a second base substrate at once and then cutting the metal foil for each semiconductor chip, the manufacturing cost of the semiconductor device can be reduced. This makes it possible to improve the productivity of semiconductor devices.

【0015】

Further, the method for manufacturing a semiconductor device according to the fifth invention of the present application is a method for manufacturing a semiconductor device according to any one of the second invention of the present application to the fourth invention of the present application, and a plurality of semiconductor chips are diced into a dicing sheet. After the semiconductor chip is attached to and expanded, the first base substrate and the second base substrate are placed on the semiconductor chip, and the semiconductor chip is joined to the first base substrate via a metal bump. To do.

【0016】

According to the method for manufacturing a semiconductor device of the fifth invention of the present application having the above configuration, after the semiconductor chip is attached to a dicing sheet and expanded, the first base substrate and the second base substrate are placed on the semiconductor chip. By joining the semiconductor chips onto the first base substrate via metal bumps, a plurality of semiconductor chips and the corresponding first base substrate can be joined together, so that the joining can be performed. The required processing cost can be reduced and the productivity can be improved.

【0017】

Further, in the sixth invention of the present application, the first base substrate and the second base substrate are separated and formed on the same surface, the semiconductor chip is bonded onto the first base substrate, and then the second base substrate and the second base substrate are formed. The feature is that the height of the semiconductor device obtained by connecting the semiconductor chip with a metal foil, depositing a resin, and then cutting the semiconductor device in predetermined units is equal to or less than the length of the short side of the bottom surface. It is a semiconductor device.

【0018】

In the present application, the bottom surface primarily refers to a surface of a semiconductor device having a rectangular parallelepiped shape that is parallel to the semiconductor chip, the first base substrate, and the second base substrate, and is referred to as height. Primaryly refers to a side of a semiconductor device having a rectangular parallelepiped shape that is in direct contact with the bottom surface. According to the semiconductor device of the sixth invention of the present application having the above configuration, the first base substrate and the second base substrate are separately formed on the same surface, and the semiconductor chip is bonded onto the first base substrate. The height of the semiconductor device obtained by connecting the second base substrate and the semiconductor chip with a metal foil, depositing the resin, and then cutting the semiconductor device in predetermined units is equal to or less than the length of the short side of the bottom surface. Therefore, it is possible to prevent the semiconductor device from tipping over when it is mounted on a circuit board or the like, so that it is possible to improve the stability at the time of mounting.

【0019】

Further, the semiconductor device of the seventh invention of the present application is the semiconductor device of the first invention of the present application or the semiconductor device of the sixth invention of the present application, and is configured as one unit including a plurality of semiconductor chips. It is characterized by.

【0020】

According to the semiconductor device of the seventh invention of the present application having the above configuration, since a plurality of semiconductor chips can be mounted at one time by being configured as one unit including a plurality of semiconductor chips, the semiconductor device can be mounted. The labor of time can be reduced. Further, since the number of semiconductor chips included in one unit and the arrangement of the semiconductor chips can be changed according to the request, it can be obtained as a semiconductor device having an optimum shape according to the application.

【0021】

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the method for manufacturing the semiconductor device and the semiconductor device according to the embodiment of the present invention will be described with reference to the drawings. However, the following embodiment is an example of the method for manufacturing the semiconductor device and the semiconductor device according to the present invention. Only. FIG. 1 is a cross-sectional view and a perspective view showing a semiconductor device according to the present embodiment. FIG. 2 is a diagram showing one manufacturing process of the semiconductor device according to the present embodiment. FIG. 3 is a cross-sectional view showing one manufacturing process of the semiconductor device according to the present embodiment. FIG. 4 is a cross-sectional view showing an embodiment according to the present embodiment. FIG. 5 is a cross-sectional view showing an embodiment according to the present embodiment.

【0022】

The semiconductor device according to the present embodiment is an integrated circuit that requires an individual semiconductor such as a transistor, a diode, or a thyristor, and a back electrode, and as shown in FIG. 1 (a), the first is via a metal bump 3. The surface opposite to the installation surface of the metal bump 3 of the semiconductor chip 1 installed on the base substrate 21 and the first base substrate 21 are separated and formed on the same surface as the first base substrate 21. The second base substrate 22 is connected to the second base substrate 22 by a metal foil 4. Further, a bonding material or a metal eutectic 7 is provided between the semiconductor chip 1 and the first base substrate 21. When using metal eutectic, a bonding material is not always required. Further, examples of the bonding material include a material having high insulating properties, an anisotropic conductive resin, and the like. As the semiconductor chip 1, a semiconductor chip 1 that has been diffused, is diced, is individually divided, and metal bumps are formed on the surface by electrolytic plating or the like is used. Further, the base substrate 21 and the base substrate 22 are conductive electrodes formed by using metal on a substrate 8 made of an insulating material, and are isolated from each other on the same surface of the substrate 8 to insulate each other. The base substrate 21 and the base substrate 22 are connected to the semiconductor chip 1 on one main surface and the opposite surface of the semiconductor chip 1, respectively. Here, one main surface refers to the metal bump installation surface of the semiconductor chip 1. The first base substrate 21 is connected to the semiconductor chip 1 via the metal bump 3, and the second base substrate 22 is connected to the semiconductor chip 1 from the upper surface (the surface opposite to the metal bump 3 installation surface) via the metal foil 4. It is connected to the semiconductor chip 1. That is, the first base substrate 21 for depositing the semiconductor chip 1 via the metal bump 3 and the base substrate formed separately from the first base substrate 21 and connected to the semiconductor chip 1 via the metal foil 4 22 and are used to form one semiconductor device. Here, the term "separated from the first base board 21" means a state in which the first base board 21 and the second base board 22 are not in contact with each other. The substrate 8 is made of a glass epoxy resin, a polyimide resin, a BT resin, a ceramic substrate, or the like. It is made of an insulating material such as tape or ceramic. The metal bump 3 is installed to connect the semiconductor chip 1 and the first base substrate 21, and is obtained by electroplating or the like using Cu, Al, Au, Ag, Sn, Pb or an alloy of these metals. .. The metal foil 4 is Al, Cu, Au, or an alloy containing these, and is used to connect the semiconductor chip 1 and the second base substrate 22 to the opposite surface of the mounting surface of the metal bump 3 of the semiconductor chip 1 and It is in contact with the upper surface of the second base substrate 22. Here, the surface opposite to the installation surface of the metal bump 3 refers to the surface of the semiconductor chip 1 opposite to the connection surface with the first base substrate 21. As described above, in the semiconductor device according to the present embodiment, it is necessary to provide a gap on the upper surface of the semiconductor chip 1 to prevent a short circuit by connecting the semiconductor chip 1 and the second base substrate 22 with the metal foil 4. Therefore, it is possible to reduce the thickness of the entire semiconductor device. On the other hand, in a conventional semiconductor device, as a result of connecting the semiconductor chip and the internal lead with a bonding wire, it becomes necessary to provide a gap on the upper surface of the semiconductor chip so that the semiconductor chip and the bonding wire do not come into contact with each other and short-circuit. It can be said that the semiconductor device according to the present embodiment can improve space efficiency as compared with the conventional semiconductor device. By connecting with 4, it is not necessary to provide a gap on the upper surface of the semiconductor chip 1 to prevent a short circuit, so that the entire semiconductor device can be made thinner. On the other hand, in a conventional semiconductor device, as a result of connecting the semiconductor chip and the internal lead with a bonding wire, it becomes necessary to provide a gap on the upper surface of the semiconductor chip so that the semiconductor chip and the bonding wire do not come into contact with each other and short-circuit. It can be said that the semiconductor device according to the present embodiment can improve space efficiency as compared with the conventional semiconductor device. By connecting with 4, it is not necessary to provide a gap on the upper surface of the semiconductor chip 1 to prevent a short circuit, so that the entire semiconductor device can be made thinner. On the other hand, in a conventional semiconductor device, as a result of connecting the semiconductor chip and the internal lead with a bonding wire, it becomes necessary to provide a gap on the upper surface of the semiconductor chip so that the semiconductor chip and the bonding wire do not come into contact with each other and short-circuit. It can be said that the semiconductor device according to the present embodiment can improve space efficiency as compared with the conventional semiconductor device.

【0023】

Next, the manufacturing method of the semiconductor device shown in FIG. 1 will be described with reference to FIGS. 2 and 3. First, refer to FIG. 2 for a step of joining the semiconductor chip 1 used when manufacturing the semiconductor device according to the present embodiment and the base substrate 21 connected to the semiconductor chip 1 via the metal bump 3. explain. First, as shown in FIG. 2 (a), the semiconductor chips 1 individually cut by dicing are attached to the dicing sheet 10 stretched on the ring 11, and then expanded as shown in FIG. 2 (b). By installing the dicing sheet 10 in the apparatus 12 and expanding the dicing sheet 10 from the outer circumference to expand the semiconductor chip 1, the semiconductor chip 1 having a widened mutual interval as shown in FIG. 2 (c) can be obtained. If the expansion is insufficient, as shown in Fig. 2 (d), after replacing the sheet, the sheet 13 is placed on the expanding device and expanded again (see Fig. 2 (e)), and the semiconductor chip. Further increase the interval of 1 (see Fig. 2 (f)). If further expansion is required, the steps of FIGS. 2 (d) and 2 (e) are repeated. Next, following the process shown in FIG. 2 (e), as shown in FIG. 2 (g), the dicing sheet 10 to which the semiconductor chip 1 is attached is installed on the bonding tool 16, and then the dicing sheet 10 is attached. A ring 14 to which the base substrate 2 is attached is placed on the 10 and the electrode pad 5 on the semiconductor chip 1 and the electrode pad 6 on the first base substrate 21 of the base substrate 2 are joined via the metal bump 3. .. A bonding material, metal eutectic, or the like is used for such bonding. When using metal eutectic, a bonding material is not always required. Further, examples of the bonding material include a material having high insulating properties, an anisotropic conductive resin, and the like. The joining method is not limited to the method shown in FIG. 2 (g) as long as the semiconductor chip 1 and the first base substrate 21 can be joined. Further, the base substrate 2 used in the present embodiment is composed of a first base substrate 21 and a second base substrate 22 separated from each other (see FIG. 2 (h)), and the first base substrate 21 and the second base substrate 2 Base board 22 is the same It is installed alternately on the surface. In this way, the semiconductor chip 1 and the first base substrate 21 are joined to obtain the semiconductor device shown in FIG. 2 (h) (enlarged view of the connection portion between the semiconductor chip 1 and the base substrate 2). Each semiconductor chip 1 is installed and connected on the base substrate 21. By connecting the semiconductor chip 1 and the first base substrate 21 by the process shown in FIG. 2, the distance between the semiconductor chips 1 can be increased at the time of the connection, so that the distance between the semiconductor chip 1 and the first base substrate 21 can be increased. Since the connection with the semiconductor device can be performed collectively, the productivity of the semiconductor device can be improved, and the processing cost required for the manufacturing can be reduced. Further, instead of the process shown in FIG. 2, the first base substrate 21 and the semiconductor chip 1 may be connected by inner lead bonding, or the semiconductor chips shown in FIGS. 2 (a) to 2 (f) may be connected. The semiconductor chip 1 and the second base substrate 21 may be bonded as shown in FIG. 2 (g) by omitting the expanding step of 1.

【0024】

Following the process shown in FIG. 2 (g), a sheet 17 (see FIG. 3 (a)) in which the metal foil 4 is arranged on the surface facing the base substrate 2 so as to be in contact with the semiconductor chip 1 and the second base substrate 22 is placed. After loading on the semiconductor chip 1 and the base substrate 2 (see FIG. 3 (b)), the metal foil 4 is joined to the semiconductor chip 1 and the second base substrate 22 from the sheet 17 using the tool 18 (FIG. 3 (FIG. 3 (b)). c) See). The bonding is performed by ultrasonic waves, heat, or a combination thereof. Further, as the metal foil 4, a metal foil 4 is used which is separated for each semiconductor chip 1 and arranged on the sheet 17. As a result, the metal leaf 4 is installed at the minimum necessary position, so that the risk of a short circuit between the wirings during operation of the device can be reduced. Next, after the metal foil 4 is peeled off from the sheet 17 (see FIG. 3D), the resin 19 is applied to the entire device including the semiconductor chip 1, the first base substrate 21, and the second base substrate 22 (FIG. 3). 3 (e)). Finally, a semiconductor device is obtained by cutting each semiconductor chip 1 from the resin 19 on the cutting surface A.

【0025】

In the conventional manufacturing process of a semiconductor device, as shown in FIG. 6D, a method is used in which a bonding wire 53 is bonded to a pad 59 provided on the semiconductor chip 1 one by one for each semiconductor chip 1. A device such as a wire bonder used for the bonding, a die bonder used for positioning and mounting the semiconductor chip 1 on an island 52 on a lead frame, and a molding device for molding with a resin 55. Is required. On the other hand, in the method for manufacturing a semiconductor device according to the present embodiment, since the semiconductor device can be manufactured without using these devices, investment in these devices becomes unnecessary, and thus the manufacturing cost is reduced. be able to.

【0026】

Further, FIG. 1 (b) shows a perspective view of the semiconductor device according to the present embodiment obtained by the steps shown in FIGS. 2 and 3. In the semiconductor device according to the present embodiment, the semiconductor chip 1, the first base substrate 21, the second base substrate 22, and the metal foil 4 are molded in the resin 19, and are formed by the process shown in FIG. As a result, as shown in FIG. 1 (b), the height Z has a shape that is equal to or less than the length of the short side X of the bottom surface. That is, in the present embodiment, since the semiconductor device can be made thinner than the conventional semiconductor device by being formed by the process shown in FIG. 3, the height Z of the semiconductor device is the short side of the bottom surface. It can be set to a shape that is less than or equal to the length of X. As a result, it is possible to prevent the semiconductor device according to the present embodiment from tipping over when it is mounted, so that it is possible to improve the stability at the time of mounting.

【0027】

Further, in the manufacturing process of the semiconductor device shown in FIG. 3, a metal foil 4 formed by separating the metal foil 4 into a predetermined size in advance is placed on the sheet 17 and then connected to the semiconductor chip 1 and the second base substrate 22. Although the method was used, instead of this method, as shown in FIGS. 4 (a) and 4 (b), one metal leaf 41 having a continuous shape was placed on the semiconductor chip 1 and the base substrate 2. Then, after connecting to the semiconductor chip 1 and the second base substrate 22 (see FIG. 4 (c)), a method of cutting the metal leaf 41 on the cut surface A may be used (see FIG. 4 (d)). By using this method, it is not necessary to position the metal foil 4 and connect it to the semiconductor chip 1 and the second base substrate 22, so that the metal foil 4 does not shift in position during positioning and the position is accurate. Can be connected to the semiconductor chip 1 and the second base substrate 22.

【0028】

On the other hand, in the steps shown in FIGS. 3 and 4, a semiconductor device including one semiconductor chip 1 is manufactured for each semiconductor device by cutting each semiconductor chip 1. Following the step shown in e), as shown in FIG. 5 (a), one semiconductor device includes a plurality of semiconductor chips 1 by cutting from the cutting surface B so as to include the plurality of semiconductor chips 1. It can be obtained as a semiconductor device configured as a unit. As a result, when it becomes necessary to mount a plurality of semiconductor devices at the same time, by changing the position of the cut surface B, as shown in FIG. 5 (b), a plurality of semiconductor chips 1 are provided as one unit. By mounting the semiconductor device, a plurality of semiconductor chips 1 can be mounted at one time, so that the labor required for mounting the semiconductor device can be reduced. Although FIG. 5 (b) shows an example of a unit in which semiconductor chips 1 are arranged in parallel, the arrangement of semiconductor chips 1 is not limited to the permutation and can be used by changing the position of the cut surface B. It can be arranged in a shape according to. In this way, by changing the number of semiconductor chips 1 and the arrangement of the semiconductor chips 1 included in one unit according to the request, a predetermined number of semiconductor chips and the shape of the unit can be obtained. It can be obtained as a semiconductor device having an optimum shape.

【0029】

[Effect of the invention]

As described above, according to the semiconductor device according to the present invention, the opposite surface of the metal bump mounting surface of the semiconductor chip mounted on the first base substrate via the metal bump and the first base substrate are Obtained by connecting the semiconductor chip and the internal lead using a wire bonding method by connecting the second base substrate, which is separated and formed on the same surface as the first base substrate, with a metal foil. Unlike conventional semiconductor devices, it is not necessary to insulate the semiconductor chip and the bonding wire, so that it is not necessary to provide a space on the upper surface of the semiconductor chip. Therefore, it can be obtained as a semiconductor device that is smaller and thinner.

【0030】

Further, according to the method for manufacturing a semiconductor device according to the present invention, the first base substrate and the second base substrate are separated and formed on the same surface, and a semiconductor chip is bonded onto the first base substrate via a metal bump. Then, a plurality of semiconductor chips are formed by connecting the second base substrate and the opposite surface of the semiconductor chip to the metal bump installation surface with a metal foil, depositing a resin, and then cutting the semiconductor chip in predetermined units. And the corresponding first base substrate can be joined together, so that productivity can be improved and processing costs can be reduced for joining, so that manufacturing costs can be reduced. it can. As described above, the productivity of the semiconductor device can be improved.

【0031】

Further, according to the method for manufacturing a semiconductor device according to the present invention, a plurality of first base substrates and a second base substrate corresponding to the plurality of first base substrates are separated and formed on the same surface, and the plurality of first base substrates are formed. After joining the semiconductor chips corresponding to the plurality of first base substrates on one base substrate via metal bumps, a sheet on which the metal foil corresponding to the semiconductor chips is installed is formed as a set with the metal foil. A plurality of semiconductor chips and the corresponding semiconductor chips and the corresponding above-mentioned semiconductor chips are installed so as to be in contact with each other on the second base substrate, and the resin is deposited after collectively joining the semiconductor chips, and then cut into predetermined units. Since the first base substrate can be joined together, the processing cost can be reduced for joining, and the productivity can be improved.

【0032】

Further, according to the method for manufacturing a semiconductor device according to the present invention, a plurality of first base substrates and a second base substrate corresponding to the plurality of first base substrates are separated and formed on the same surface, and the plurality of first base substrates are formed. After joining the semiconductor chips corresponding to the plurality of first base substrates on one base substrate via metal bumps, one metal foil is placed on the semiconductor chip and the second base substrate and joined together. Then, after cutting the metal foil for each of the semiconductor chips, a resin is deposited, and then the semiconductor chips are cut for each predetermined unit to collectively combine the plurality of semiconductor chips and the corresponding first base substrate. Since the bonding can be performed, the processing cost required for the bonding can be reduced, and the productivity can be improved. Further, by joining one metal foil to a plurality of semiconductor chips and a second base substrate at once and then cutting the metal foil for each semiconductor chip, the manufacturing cost of the semiconductor device can be reduced. This makes it possible to improve the productivity of semiconductor devices.

【0033】

Further, according to the semiconductor device according to the present invention, the first base substrate and the second base substrate are separated and formed on the same surface, the semiconductor chip is bonded onto the first base substrate, and then the second base substrate is formed. The height of the semiconductor device obtained by connecting the semiconductor chip with the semiconductor chip with a metal foil, depositing a resin, and then cutting the semiconductor device in predetermined units is equal to or less than the length of the short side of the bottom surface. Since it is possible to prevent the semiconductor device from tipping over when it is mounted on an integrated circuit or the like, it is possible to improve the stability at the time of mounting.

[Simple explanation of drawings]

[Figure 1]

It is sectional drawing and perspective view which show the semiconductor device which concerns on this embodiment.

[Figure 2]

It is a figure which shows one manufacturing process of the semiconductor device which concerns on this embodiment.

[Fig. 3]

It is sectional drawing which shows one manufacturing process of the semiconductor device which concerns on this Embodiment.

[Fig. 4]

It is sectional drawing which shows one Example which concerns on this Embodiment.

[Fig. 5]

It is sectional drawing which shows one Example which concerns on this Embodiment.

[Fig. 6]

It is a figure which shows the conventional semiconductor device and its manufacturing process.

[Explanation of symbols]

1 Semiconductor chip 2 Base board 3 metal bumps 4 metal leaf 5, 6 electrode pads 7 Bonding material or metal eutectic 8 board 10 Dicing sheet 11, 14 rings 12 Expanding device 13 sheets 15 Presser stage 16 Joining tool 17 sheets 18 Tools 19, 55 resin 21 1st base board 22 2nd base board 41 Metal ribbon 42 cutter 51 Lead frame 52 Island 53 Bonding wire 54 balls 56 External lead 57 Internal lead 58 Edge 59 pad A, B cut surface h height X height Z The length of the short side of the bottom