Systems and methods for adaptive generation of high power electromagnetic generation and their applications

SYSTEMS AND METHODS FOR ADAPTIVE GENERATION OF HIGH POWER ELECTROMAGNETIC GENERATION AND THEIR APPLICATIONS

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is a continuation-in-part of U.S. Application No. 17/561,033 filed December 23, 2021, which is a continuation of U.S. Application No. 17/235,875 filed April 20, 2021 and issued as U.S. Patent No. 11,211,703, which is a continuation-in-part of International Patent Application No. filed March 10, 2020, which claims benefit of priority of U.S. Provisional Patent Application Serial Number 62/817,096 filed March 12, 2019. U.S. Application No. 17/235,875 is a continuation-in-part of U.S. Application No. 16/779,036 filed January 31, 2020, which claims benefit of priority of U.S. Provisional Patent Application Serial Number 62/817,096, filed March 12, 2019. U.S. Application No. 17/235,875 claims benefit of priority of U.S. Provisional Patent Application Number 63/144,900, filed February 2, 2021 and of U.S. Provisional Patent Application Number 63/145,410, filed February 3, 2021. This application claims benefit of priority of U.S. Provisional Patent Application Number 63/144,900, filed February 2, 2021 and of U.S. Provisional Patent Application Number 63/145,410, filed February 3, 2021. The contents of each of the above-identified applications are incorporated herein by reference.

TECHNICAL FIELD

[0002] This disclosure relates generally to radio frequency (RF) amplifiers; specifically, using circuits and methods to improve the power efficiency and linearity and power out performance of the amplifier devices. These inventions relate to the field of commercial technology for using RF for terrestrial and satellite based communications and radar, but also to other fields such as radio astronomy, RF sensing for autonomous vehicles, high-power electromagnetic signal processing as well as electronic counter measures and other areas where RF amplifiers are used. Some implementations of the disclosure are directed toward techniques for synchronizing power circuits with coherent radio frequency (RF) signals to form a steered composite RF signal in a far field.

BACKGROUND

[0003] Amplifiers to increase the magnitude of voltage/current/power of an input signal are useful in many analog and digital devices including radio frequency (RF) devices, microwave devices, computers/laptops and cell phones. Output power, efficiency and linearity are some of the important figures-of-merit (FoM) for systems employing amplifiers. Existing driving schemes for many amplifiers (e.g., high power amplifiers) are not designed to optimize multiple figures of merit. Accordingly, driving schemes that can improve various figures-ofmerit for amplifiers are advantageous.

[0004] Furthermore, the production of high-power RF signals, such as multiple watts for commercial applications and up to Megawatts of radiated power for other applications, typically requires RF amplifiers and other signal processing circuitry that consume large amounts of energy, which may result in large amounts of radiated heat. Consequently, expensively rated circuits and elaborate cooling mechanisms are typically required in such systems. Moreover, the bias voltages/currents required for efficient operation of RF amplifiers in high-power generating RF systems can change with age and/or temperature. Accordingly, there is a need for circuits that can change provide appropriate bias voltages/currents to achieve efficient performance of RF amplifiers in high-power generating RF systems.

SUMMARY

[0005] Various implementations described herein are directed towards methods and systems to provide bias current and power that would set or change the operating conditions of a radio frequency amplifier, such as, for example, high power Gallium Nitride (GaN), silicon metal oxide semiconductor field effect transistors (MOSFETS), other III-V devices, or other semiconductor-based radio frequency (RF) amplifiers. Various implementations of biasing systems described herein are configured to provide biasing voltages/currents to turn on/off the amplifiers and/or dynamically adjust the biasing voltages/currents to change the operating conditions of the amplifier. For example, the implementations of biasing systems described herein are configured to dynamically change the operating condition of an amplifier from operating in a saturation regime to operating in a linear regime or vice-versa. The biasing system allows to dynamically adjust between any class of amplifier, including but not limited to class A, class AB, class B, class C, class D, class E, class F, class G, class H, Class S and class T. These classes of amplifiers have to do with what cycle of an RF waveform, such as a sinusoid, draw current. In a class A amplifier, the current is drawn throughout the entire waveform cycle, and is the most linear, such that intermodulation distortion products are the lowest and the amplifier has the highest signal dynmic range. Using the dynamic biasing approach, the amplifier can be switched to different classes of linear amplifier and make a tradeoff between power efficiency and linearity, where the larger of the current cycle the system allows the amplifier to draw, the more linear it is but less efficient. The less of the cycle the amplifier is allowed to draw current, the less linear but the more power efficient the amplifier becomes. Most RF amplifiers can transmit more RF power in less linear modes. According, linearity is often traded with output power. The biasing system is also used to completely turn the amplifier off when no RF signals are flowing through the amplifier and being amplified. Turning off the bias completely minimizes leakage and quiescent current. Turning off quiescent current is critical for especially high power amplifiers with high drain voltages such as 22 volts or 65 volts, because with large drain voltages, the quiescent current is significant. The amplifiers driven by the biasing systems described herein can be configured to produce high-power RF signals with low average power, such as, for example average power less than or equal to about 15 Kilowatts. The biasing system can be embodied as field programmable gate arrays (FPGAs), application specific integrated circuit (ASICs), analog circuits, and/or monolithic multiwave integrated circuits (MMICs).

[0006] Implementations of biasing systems and methods described herein are configured to adjust the biasing currents/voltages of the amplifier based on information obtained about the input signal characteristics, output signal characteristics, system operating conditions (e.g., operating temperature, operating currents/voltages at various terminals of the amplifier/system, etc.), an input received from a user or an electronic processing system controlling the biasing systems and/or by information obtained from look-up tables that provide an understanding of the state of the amplifier system. The biasing voltages/currents can be adjusted in real time or substantially in real time (e.g., within about 1 ns and about 50 ns or more) after receiving an input or obtaining information regarding the input signal characteristics, output signal characteristics and/or system operating conditions. For example, various implementations of the biasing systems can be configured to sense/obtain input signal characteristics, output signal characteristics, system operating conditions (e.g., operating temperature, operating currents/voltages at various terminals of the amplifier/system, etc.) and/or information from one or more look-up tables and adjust the biasing currents/voltages provided to the amplifier in real time or substantially in real time to optimize one or more of the following figures of merit: amplifier gain, output power, drain/power efficiency, linearity, and signal-to-noise ratio. For example, various implementations of the biasing systems can be configured to sense/obtain input signal characteristics, output signal characteristics, system operating conditions (e.g., operating temperature, operating currents/voltages at various terminals of the amplifier/system, etc.) and/or information from one or more look-up tables and adjust the biasing current/voltages provided to the amplifier in real time or substantially in real time to increase drain/power efficiency and linearity for a target output power. As another example, various implementations of the biasing systems can be configured to sense/obtain input signal characteristics, output signal characteristics, system operating conditions (e.g., operating temperature, operating currents/voltages at various terminals of the amplifier/system, etc.) and/or information from one or more look-up tables and adjust the biasing current/voltages provided to the amplifier in real time or substantially in real time to increase linearity for a target drain/power efficiency. As yet another example, various implementations of the biasing systems are configured to turn on/tum off the biasing current/voltage provided to the amplifier based on whether or not a signal to be amplified is input to the amplifier. As another example, various implementations of the biasing systems are configured to adjust and/or turn off the biasing current/voltage provided to the amplifier to reduce damaging the amplifier.

[0007] Implementations of the biasing systems described herein are configured to drive amplifiers that are disposed in a phased array system. The phased array system can comprise antennas that receive amplified RF signal output by the amplifiers. The phased array system can employ digital beam-forming capability and controlled by software instructions. The phased array system can be configured as an electromagnetic pulse (EMP) generation system, a radar system, a jamming system, a communications system and/or an electronic counter measures system. For example, the phased array system can be configured to generate EMPs with Megawatts of radiated power. In the phased array implementation, power amplifier of various elements of the phased array may have unique temperature, voltage or process setting. Accordingly, the different power amplifiers in a phased array may need a unique bias set point to optimize power out, optimize the linearity, efficiency of the amplifier or other characteristics. For example, amplifiers in different locations in the phased array may have different temperatures. Thus, the values of bias voltages and currents that optimize various figures of merits may be different for different amplifiers in the phased array. Accordingly, tuning the bias voltages/current for each element in the phased array to its own unique bias setting is important for optimizing one or more figures of merit over the whole array. In implementations of phased arrays comprising high band gap semiconductor devices such as GaAs, InP, SiGe, and GaN amplifiers, the dopants in the material of the semiconductor devices may vary from one device to another during manufacturing process. This is referred to as process variation. The settings of bias currents/voltages for different amplifiers in a phased array may be different as a result of process variation. In different areas of the phased array, the voltage to the devices may vary. Different locations in the array may have differing voltage ripple. Different locations in the phased array may also have different loads and different impedances. For example, if the phased array is built out of columns where each column is sourced with a single power supply, the lowest element in the column may have a different supply voltage than the highest element in the column due to resistance along the column. Voltage variation is another example where dynamically setting the bias voltages/currents on a per element basis may be required to optimize various figures of merit over the whole array. The voltage standing wave ratio (VSWR) at different elements of the phased array may be different in a phased array system. Ulis can be attributed to the variation in the electromagnetic pattern across the phased array. For example, the inner most elements of the phased array may experience a different electromagnetic interference pattern than the outermost elements which can lead to different VSWR. Changing the settings of the bias currents/voltages for different elements of the phased array may reduce the difference in the VSWR across the phased array.

[0008] Various implementations of phased array systems described herein comprising a plurality of phased array elements are configured to be optimized on a per element basis to optimize the overall output of the phased array. Each of the plurality of phased array elements can comprise a plurality of amplifiers connected to an antenna. The plurality of amplifiers are individually characterized to determine the settings of bias voltages and currents that increase, decrease, maximize or minimize one or more figures of merit of the amplifier including but not limited to saturated power of the amplifier, gain of the amplifier and linearity of the amplifier. For example, the plurality of amplifiers are individually characterized to determine the settings of bias voltages and currents that maximizes the power of the signal output from the amplifier. As another example, the plurality of amplifiers are individually characterized to determine the settings of bias voltages and currents that maximizes the gain provided by the amplifier. As another example, the plurality of amplifiers are individually characterized to determine the settings of bias voltages and currents that maximizes linearity of the amplifier. The settings of bias voltages and currents that increase, decrease, maximize or minimize one or more figures of merit of the amplifier are stored in an electronic memory which is in electrical communication with processing electronics.

[0009] Each of the plurality of phased array elements comprises a smart power management system that is configured to tum-on the individual amplifiers in each phased array element and provide the appropriate bias voltages and currents that would generate output signals with desired characteristics. The desired characteristics can include maximum power out, high degree of linearity, or maximum gain. The smart power management system comprises processing electronics in electrical communication with an electronic memory that stores the settings of bias voltages and currents that increase, decrease, maximize or minimize one or more figures of merit of the amplifiers under the control of the smart power management system. In various implementations, the smart power management system is configured to turnon the individual amplifiers in each phased array element upon receiving indication that a RF signal will be/is being input to the phased array element. The indication can be received from the RF generator generating the input RF signal, a user, or a computing system in communication with the phased array system. While the amplifiers are turned on, the smart power management system is configured to sense voltages and currents at various nodes of the amplifier and adjust the bias voltages and currents based on the sensed voltages and currents to ensure that the desired characteristics of the output signal is maintained. In some implementations, the smart power management system is configured to adjust the bias voltages and currents at time intervals less than 10 microseconds. In some implementations, the smart power management system is configured to adjust the bias voltages and currents continuously. The smart power management system is configured to turn-off the individual amplifiers in each phased array element upon receiving indication that the RF signal will not be/is not being input to the phased array element.

[0010] In various implementations of the phased array system comprising field-effect transistors as amplifiers, the smart power management system is configured to turn-on the amplifiers by setting the drain bias voltage and the gate bias voltage to cause a threshold amount of drain current to flow through the amplifier. The threshold amount of drain current being indicative of the characteristic of the output signal. For example, when the amplifier is operated to output signal with a maximum power, the drain current can have a value equal to a first threshold amount. As another example, when the amplifier is operated to output signal with a maximum gain, the drain current can have a value equal to a second threshold amount. As yet another example, when the amplifier is operated to output signal with high linearity, the drain current can have a value equal to a third threshold amount. The drain current can also be indicative of the temperature of the amplifier.

[0011] During the time that the amplifiers are turned on, the smart power management system is configured sense the drain current and modulate the gate bias voltage and/or the drain bias voltage to maintain the drain current at the threshold level. The smart power management system can sense the drain current and modulate the gate bias voltage and/or the drain bias voltage continuously or at intervals less than 10 microseconds. Maintaining the drain current at the threshold amount while the amplifier is turned on can reduce the rate at which the temperature of the amplifier increases which can keep the amplifier from over heating. Various implementations of phased array systems comprising the smart power management system described above can be configured to output pulsed electromagnetic radiation with pulse duration in a range between 5 ns and 300 gs. To provide the ability to generate and support pulses of longer duration, such as for example, between 10 gs and 300 gs, the amplifiers of individual phased array elements are associated with a multi-level energy storage network comprising large storage capacitors and/or multi-level capacitor network.

[0012] Various implementations of the systems comprise a system that can generate high power electro-magnetic beams. The system can be controlled by software instructions. The high power electro-magnetic beams are capable of charging electro-magnetic devices, resetting electro-magnetic devices, disrupting electronic circuits and components, disabling and/or destroying electronic circuits and components. As described in further detail below, implementations of the systems comprise a computer controlled radio frequency (RF) generator configured to emit a RF signal and solid state microwave amplifiers (e.g., high power GaN amplifiers) that amplify the generated RF signal. The RF signal can be a pulsed waveform comprising RF pulses having a duration between about 10 nanoseconds and about 1 millisecond at repetition rates up to 1 MHz. The solid state amplifiers can amplify the power of the RF signals from a few milliwatts (mW) to a few kilowatts (kW). The frequency and/or power of the RF signal can be changed in real time or substantially in real-time (e.g., in a time interval less than a few seconds) to achieve different effects on the targeted electro-magnetic devices.

[0013] In some implementations, a power management system can be configured to provide a voltage or a current to an amplifier. The power management system can comprise an electronic processing system, a power adapting system configured to convert power received from an external power supply to voltage levels and/or current levels to turn on an amplifier connected to the power management system, a sensing system configured to sense a current from the amplifier, and a memory connected to the electronic processing system.

[0014] In some implementations, the memory can store instructions executed by the electronic processing system to receive an input from a signal generator, the input being indicative of a signal being output from the signal generator. In response to receiving the input from the signal generator, the power adapting system provides a voltage or a current to the amplifier, the provided voltage or current being configured to turn on the amplifier. The sensing system can be configured to receive a current value from the amplifier, the sensed current value being indicative of a state of the amplifier. The power adapting system can be configured to change the provided voltage or current based on the received current value. In various implementations, the signal generator can be a radio frequency (RF) signal generator. The electronic processing system can be configured to cause the power adapting system to turn off the amplifier in response to determining that the signal generator is not outputting a signal. The sensed current value can be indicative of a temperature of the amplifier.

[0015] In some implementations, an apparatus has a processor and a memory connected to the processor. The memory stores instructions executed by the processor to sequentially collect from an array of amplifiers individual amplifier current values. The array of amplifiers is an array of high-power amplifiers configured as a phased array. The individual amplifier current values are compared to target amplifier current values to periodically identify an amplifier state error. Alteration of an amplifier gate bias voltage is initiated in response to the amplifier state error.

[0016] Various implementations can include an apparatus comprising an RF signal generator to produce RF signals phase shifted relative to one another in accordance with RF frequency waveform parameters; and amplifier chains to process the RF signals to produce channels of amplified RF signals, wherein each amplifier chain has amplifiers and wherein at least one amplifier has a tunable gate voltage synchronized with the RF signals.

[0017] In some implementations, the amplifier chains can have a plurality of solid state amplifiers each of which has a tunable gate voltage. The tunable gate voltage can be an amplifier on set point that is derived from an automatic calibration operation. In various implementations, the amplifier can have a capacitance that is tuned to an on set point for the at least one amplifier. In various implementations, the amplifier can have a gate voltage tuned based on sensor feedback from the at least one amplifier. In various implementations, an offset voltage of a plurality of gate voltage slave circuits is tuned and controlled by a central master power gating circuit. Various implementations of the apparatus described herein can further comprise a central computer to produce the Radio Frequency (RF) waveform parameters. Various implementations of the apparatus described herein can further comprise an antenna array to broadcast the channels of amplified RF signals as a steered composite RF signal with Megawatts of radiated power. The steered composite RF signal can be pulsed for less than 1 millisecond. The steered composite RF signal can have a frequency of approximately 1 GHz.

[0018] The central computer can include a processor and a memory storing a target classifier with instructions executed by the processor to classify a target based upon flight attributes of the target. The central computer can include a waveform selector stored in the memory, the waveform selector being configured to select the RF waveform parameters from a waveform look-up table. The RF signal generator can be an RF system on a Chip Field Programmable Gate Array. The RF signal generator can produce digital RF signals that are applied to digital-to-analog converters. Various implementations of the apparatus can further comprise a power sequencer controlled by the RF signal generator. The power sequencer can be configured as a master power sequencing gating unit. Various implementations of the apparatus can further comprise smart slave circuits controlled by the power sequencer, wherein the smart slave circuits coordinate an automatic calibration operation. Various implementations of the apparatus can further comprise a reflector dish to process the channels of amplified RF signals. Various implementations of the apparatus can further comprise a mechanical gimbal to orient the position of the reflector dish. Various implementations of the apparatus can be in combination with a target detector.

[0019] The systems, methods, modules, and devices of this disclosure each have several innovative aspects, no single one of which is solely responsible for the desirable attributes disclosed herein. A variety of example systems, modules, and methods are provided below.

[0020] Embodiment 1: An amplifying system comprising:

a radio-frequency (RF) amplifier, the RF amplifier configured to receive an incoming RF signal having an input power through an input port and an outgoing RF signal through an output port, the outgoing RF signal having an output power; and a power management system configured to adjust the RF amplifier by controlling an amount of bias power provided to the RF amplifier, wherein the power management system is configured to sense at least one of the input power of the incoming RF signal, the output power of the outgoing RF signal, or a characteristic of the RF amplifier and adjust the amount of bias power provided to the RF amplifier based on the sensed input power of the incoming RF signal, the output power of the outgoing RF signal, or a characteristic of the RF amplifier to improve a figure of merit of the RF amplifier.

[0021] Embodiment 2: The amplifying system of Embodiment 1, wherein the figure of merit is linearity of the RF amplifier, and wherein power management system is configured to improve linearity of the RF amplifier by adjusting the amount of bias power to the RF amplifier to reduce an amount of third order intermodulation distortions (IMD3).

[0022] Embodiment 3: The amplifying system of any of Embodiments 1-2, wherein the power management system is configured to adjust the amount of bias power provided to the RF amplifier to reduce third order intermodulation distortions (IMD3) by an amount less than or equal to about 150 dB.

[0023] Embodiment 4: The amplifying system of any of Embodiments 1-3, wherein the RF amplifier comprises a field effect transistor (FET) amplifier comprising a gate terminal, a drain terminal and a source terminal, and wherein the power management system is configured to adjust the bias power provided to the RF amplifier by adjusting a gate bias voltage between the gate terminal or the source terminal or adjusting a drain bias voltage between the drain terminal and the source terminal.

[0024] Embodiment 5: The amplifying system of Embodiment 4, wherein for a given output power, the power management system is configured to provide an amount of gate bias voltage that reduces third order intermodulation distortions (IMD3) to improve linearity.

[0025] Embodiment 6: The amplifying system of Embodiment 5, wherein the third order intermodulation distortions (IMD3) is reduced by an amount less than or equal to about 150 dB.

[0026] Embodiment 7: The amplifying system of any of Embodiments 4-6, wherein a drain efficiency obtained at the amount of gate bias voltage that reduces third order intermodulation distortions (IMD3) is lower than a maximum drain efficiency for the given output power.

[0027] Embodiment 8: The amplifying system of any of Embodiments 4-7, wherein the characteristic of the RF amplifier comprises at least one of temperature, drain voltage, gate voltage, drain current, or gate current of the FET amplifier.

[0028] Embodiment 9: A phased array system comprising:

a plurality of amplifying systems of any of Embodiments 1-8 arranged in a first array; and a plurality of antennas arranged in a second array, each of the plurality of antennas arranged in the second array being coupled to the output port of a corresponding one of the amplifying system in the first array.

[0029] Embodiment 10: The phased array system of Embodiment 9, configured as a radar system, a communications system, or an electronic counter measures system.

[0030] Embodiment 11: An amplifying module comprising:

a radio-frequency (RF) amplifier configured to receive an incoming RF signal having an input power through an input port and output an outgoing RF signal through an output port, the outgoing RF signal having an output power, the RF amplifier configured to be operated in a saturation mode in which the output power is approximately equal to saturation power of the RF amplifier and a non-saturation mode in which the output power is less than the saturation power of the RF amplifier; and a power management system configured to transition the RF amplifier between the saturation mode and the non-saturation mode by adjusting an amount of bias power provided to the RF amplifier.

[0031] Embodiment 12: The amplifying module of Embodiment 11, wherein the power management system can be configured to transition operating mode of RF the amplifier from the saturation mode and the non-saturation mode smoothly along a power transfer curve of the RF amplifier.

[0032] Embodiment 13: The amplifying module of any of Embodiments 11-12, wherein the power management system is configured to change operating mode of the RF amplifier in real-time.

[0033] Embodiment 14: The amplifying module of any of Embodiments 11-13, wherein the power management system is configured to change the operating mode of the RF amplifier based on an input received from a user, a computing device controlling the power management system, or a sensor sensing the input power of the incoming RF signal.

[0034] Embodiment 15: The amplifying module of any of Embodiments 11-14, wherein the RF amplifier comprises a field effect transistor (FET) amplifier comprising a gate terminal, a drain terminal and a source terminal, and wherein the power management system is configured to transition the amplifier between the saturation mode and the non-saturation mode by adjusting an amount of gate bias voltage between the gate terminal and the source terminal.

[0035] Embodiment 16: An amplifying module comprising:

a radio-frequency (RF) amplifier configured to receive an incoming RF signal having an input power through an input port and output an outgoing RF signal through an output port, the outgoing RF signal having an output power; and a power management system configured to change a class of operation of the RF amplifier by controlling an amount of bias power provided to the RF amplifier.

[0036] Embodiment 17: The amplifying module of Embodiment 16, wherein the power management system is configured to change the class of operation of the RF amplifier in real-time.

[0037] Embodiment 18: The amplifying module of any of Embodiments 16-17, wherein the power management system is configured to change the class of operation of the RF amplifier based on an input received from a user, a computing device controlling the power management system, or a sensor sensing the input power of the incoming RF signal.

[0038] Embodiment 19: The amplifying module of any of Embodiments 16-18, wherein the RF amplifier comprises a field effect transistor (FET) amplifier comprising a gate terminal, a drain terminal and a source terminal, and wherein the power management system is configured to change the class of operation of the RF amplifier by controlling an amount of gate bias voltage between the gate terminal and the source terminal.

[0039] Embodiment 20: The amplifying module of any of Embodiments 16-19, wherein the class of the RF amplifier is selected from a group consisting of class A, class B, class AB, class C, class D, class E, Class F, class G, class H, and Class T.

[0040] Embodiment 21: A system configured to test effects of high power electromagnetic radiation on an electrical device under test (DUT), the system comprising:

an electronic computing system;

a high power electromagnetic radiation generator configured to direct high power electromagnetic radiation towards the DUT, the high power electromagnetic radiation generator comprising:

a programmable radio frequency (RF) generator configured to generate an RF signal with a central frequency in a range from about 500 MHz to about 4.0 GHz;

an amplifying system configured to amplify the generated RF signal, the amplifying system comprising a plurality of solid-state amplifiers; and a power management system configured to turn on the plurality of solidstate amplifiers in response to receiving a signal indicating that the RF signal is or will be input to the amplifying system, the power management system further configured to turn off the plurality of solid-state amplifiers in response to receiving a signal indicating that the RF signal is not or will not be input to the amplifying system; and a sensing system configured sense currents and voltages at various terminals of the DUT and to transmit the sensed currents and voltages to the electronic computing system, wherein the electronic computing system is configured to analyze the sensed currents and voltages to evaluate effects of the high power electromagnetic radiation on the DUT.

[0041] Embodiment 22: The system of Embodiment 21, wherein the electronic computing system is configured to: cause the high power electromagnetic radiation generator to generate high power electro-magnetic radiation with different combinations of frequency and power levels and obtain sensed information for each of the different combinations.

[0042] Embodiment 23: The system of any of Embodiments 21 or 22, wherein the sensing system is configured to be connected to the DUT.

[0043] Embodiment 24: The system of any of Embodiments 21-23, wherein the high power electromagnetic radiation comprises an electromagnetic pulse (EMP).

[0044] Embodiment 25: A tunable system configured to emit electromagnetic pulses, the system comprising:

a hardware computing system;

a programmable radio frequency (RF) generator configured to be controlled by the hardware computing system, the RF generator configured to generate RF signal having a central frequency in a range from about 500 MHz to about 100 GHz, the RF signal comprising a plurality of pulses having a pulse duration, a duty cycle, and a pulse amplitude, wherein at least one of the central frequency, the pulse duration, the duty cycle, or the pulse amplitude is variable and is configured to be set by the hardware computing system;

an amplifying system configured to amplify the generated RF signal, the amplifying system comprising:

a plurality of solid-state amplifiers; and a power management system configured to turn on the plurality of solidstate amplifiers in response to receiving a signal indicating that the RF signal is or will be input to the amplifying system, the power management system further configured to turn off the plurality of solid-state amplifiers in response to receiving a signal indicating that the RF signal is not or will not be input to the amplifying system; and an antenna system configured to direct the amplified RF signal as an electromagnetic pulse (EMP) radiation towards a target electronic system, the EMP radiation configured to cause a first disruptive effect in the target electronic system at a power level in a first power range and cause a second disruptive effect in the target electronic system at a power level in a second power range, the second power range being greater than the first power range.

[0045] Embodiment 26: The system of Embodiment 25, wherein the power management system comprises a current sensor configured to sense a current in an amplifier of the plurality of solid-state amplifiers and adjust a bias voltage provided to a terminal of the amplifier based on the sensed current.

[0046] Embodiment 27: The system of Embodiment 26, wherein the sensed current is indicative of a temperature of the amplifier.

[0047] Embodiment 28: The system of any of Embodiments 26-27, wherein the amplifier comprises a three terminal device including a gate terminal, a drain terminal, and a source terminal, wherein the current sensor is configured to sense current at the drain terminal, and wherein the power management system is configured to adjust the bias voltage provided to the gate terminal in response to the current sensed at the drain terminal.

[0048] Embodiment 29: The system of any of Embodiments 26-28, wherein the amplifier is configured to provide an amplifier gain, and wherein the power management system is configured to adjust the bias voltage provided to the gate terminal to maintain the amplifier gain at a threshold gain value.

[0049] Embodiment 30: The system of any of Embodiments 26-29, wherein the first disruptive effect comprises resetting the target electronic system or causing the target electronic system to become inoperable.

[0050] Embodiment 31: The system of any of Embodiments 25-30, wherein the second disruptive effect comprises causing the target electronic system to become inoperable.

[0051] Embodiment 32: The system of any of Embodiments 25-31, wherein the target electronic system comprises a router, a controller, a communication device, a computer equipment, or an unmanned aerial system.

[0052] Embodiment 33: The system of any of Embodiments 25-32, wherein the central frequency is tuned to match a resonant frequency of a wire or circuit trace in the target electronic system.

[0053] Embodiment 34: A tunable system configured to emit electromagnetic pulses, the system comprising:

a hardware computing system;

a programmable radio frequency (RF) generator configured to be controlled by the hardware computing system, the RF generator configured to generate RF signal having a central frequency in a range from about 500 MHz and to about 100 GHz, the RF signal comprising a plurality of pulses having a pulse duration, a duty cycle, and a pulse amplitude, wherein at least one of the central frequency, the pulse duration, the duty cycle, or the pulse amplitude is variable and is configured to be set by the hardware computing system;

an amplifying system comprising a plurality of solid-state amplifiers configured to amplify the generated RF signal; and an antenna system configured to direct the amplified RF signal as an electromagnetic pulse (EMP) radiation towards a target electronic system, the EMP radiation configured to cause a first disruptive effect in the target electronic system at a power level in a first power range and cause a second disruptive effect in the target electronic system at a power level in a second power range, the second power range being greater than the first power range.

[0054] Embodiment 35: The system of Embodiment 34, wherein the amplifying system further comprises a power management system configured to turn on the plurality of solid-state amplifiers in response to receiving a signal indicating that the RF signal is or will be input to the amplifying system, the power management system further configured to turn off the plurality of solid-state amplifiers in response to receiving a signal indicating that the RF signal is not or will not be input to the amplifying system.

[0055] Embodiment 36: The system of Embodiment 35, wherein the power management system comprises a current sensor configured to sense a current in an amplifier of the plurality of solid-state amplifiers and adjust a bias voltage provided to a terminal of the amplifier based on the sensed current.

[0056] Embodiment 37: The system of Embodiment 36, wherein the sensed current is indicative of a temperature of the amplifier.

[0057] Embodiment 38: The system of any of Embodiments 36-37, wherein the amplifier is a three terminal device comprising a gate terminal, a drain terminal and a source terminal, wherein the current sensor is configured to sense current at the drain terminal, and wherein the power management system is configured to adjust the bias voltage provided to the gate terminal in response to the sensed drain current. [0058] Embodiment 39: The system of Embodiment 38, wherein the amplifier is configured to provide an amplifier gain, and wherein the power management system is configured to adjust the bias voltage provided to the gate terminal to maintain the amplifier gain at a threshold gain value.

[0059] Embodiment 40: The system of any of Embodiments 34-39, wherein the first disruptive effect comprises resetting the target electronic system or causing the target electronic system to become inoperable.

[0060] Embodiment 41: The system of any of Embodiments 34-40, wherein the second disruptive effect comprises causing the target electronic system to become inoperable.

[0061] Embodiment 42: The system of any of Embodiments 34-41, wherein the target electronic system comprises a router, a controller, a communication device, a computer equipment, or an unmanned aerial system.

[0062] Embodiment 43: The system of any of Embodiments 34-42, wherein the central frequency is tuned to match a resonant frequency of a wire or circuit trace in the target electronic system.

[0063] Embodiment 44: A tunable system configured to emit electromagnetic pulses, the system comprising:

a hardware computing system;

a programmable radio frequency (RF) generator configured to be controlled by the hardware computing system, the RF generator configured to generate RF signal having a central frequency in a range from about 500 MHz and to about 100 GHz, the RF signal comprising a plurality of pulses having a pulse duration, a duty cycle, and a pulse amplitude, wherein at least one of the central frequency, the pulse duration, the duty cycle, or the pulse amplitude is variable and is configured to be set by the hardware computing system;

an amplifying system configured to amplify the generated RF signal, the amplifying system comprising:

a plurality of solid-state amplifiers; and a power management system configured to turn on the plurality of solidstate amplifiers in response to receiving a signal indicating that the RF signal is or will be input to the amplifying system, the power management system further configured to turn off the plurality of solid-state amplifiers in response to receiving a signal indicating that the RF signal is not or will not be input to the amplifying system; and an antenna system configured to direct the amplified RF signal as an electromagnetic pulse (EMP) radiation towards a target electronic system, the EMP radiation configured to cause a first disruptive effect in the target electronic system at a first power level greater than a first threshold power level.

[0064] Embodiment 45: The system of Embodiment 44, wherein the first disruptive effect comprises resetting the target electronic system.

[0065] Embodiment 46: The system of Embodiment 44, wherein the first disruptive effect comprises causing the target electronic system to become inoperable.

[0066] Embodiment 47: The system of Embodiment 46, wherein the EMP radiation is configured to cause a second disruptive effect in the target electronic system at a second power level greater than a second threshold power level, the second power level being less than the first threshold power level.

[0067] Embodiment 48: The system of Embodiment 47, wherein the second disruptive effect comprises resetting the target electronic system.

[0068] Embodiment 49: The system of any of Embodiments 44-48, wherein the power management system comprises a current sensor configured to sense a current in an amplifier of the plurality of solid-state amplifiers and adjust a bias voltage provided to a terminal of the amplifier based on the sensed current.

[0069] Embodiment 50: The system of Embodiment 49, wherein the sensed current is indicative of a temperature of the amplifier.

[0070] Embodiment 51: The system of any of Embodiments 49-50, wherein the amplifier is a three terminal device comprising a gate terminal, a drain terminal and a source terminal, wherein the current sensor is configured to sense current at the drain terminal, and wherein the power management system is configured to adjust the bias voltage provided to the gate terminal in response to the sensed drain current.

[0071] Embodiment 52: The system of Embodiment 51, wherein the amplifier is configured to provide an amplifier gain, and wherein the power management system is configured to adjust the bias voltage provided to the gate terminal to maintain the amplifier gain at a threshold gain value.

[0072] Embodiment 53: The system of any of Embodiments 44-52, wherein the target electronic system comprises a router, a controller, a communication device, a computer equipment, or an unmanned aerial system.

[0073] Embodiment 54: The system of any of Embodiments 44-53, wherein the central frequency is tuned to match a resonant frequency of a wire or circuit trace in the target electronic system.

[0074] Embodiment 55: A system for controlling an amplifier, the system comprising: a power management system configured to convert power received from an external power supply to at least one of a voltage or current that turn on an amplifier;

a sensing system configured to sense a current in the amplifier; and a hardware computing system comprising at least processor and memory, wherein the memory stores instructions that, when executed by the at least one processor, cause the at least one processor to:

in response to receiving an input from a signal generator, cause the power management system to supply at least one of the voltage or current to the amplifier to turn on the amplifier; and adjust the at least one of the voltage or current based on the current sensed by the sensing system.

[0075] Embodiment 56: The system of Embodiment 55, wherein the current sensed by the sensing system is indicative of a temperature of the amplifier.

[0076] Embodiment 57: The system of any of Embodiments 55-56, wherein the sensing system comprises a current sensor.

[0077] Embodiment 58: The system of any of Embodiments 55-57, wherein the power management system is configured to adjust a bias voltage provided to a terminal of the amplifier based on the current sensed by the sensing system.

[0078] Embodiment 59: The system of Embodiment 58, wherein the amplifier comprises a three terminal device including a gate terminal, a drain terminal, and a source terminal, wherein the sensing system is configured to sense current at the drain terminal, and wherein the power management system is configured to adjust the bias voltage provided to the gate terminal in response to the current sensed at the drain terminal.

[0079] Embodiment 60: The system of Embodiment 59, wherein the amplifier is configured to provide an amplifier gain, and wherein the power management system is configured to adjust the bias voltage provided to the gate terminal to maintain the amplifier gain at a threshold gain value.

[0080] Embodiment 61: The system of any of Embodiments 59-60, wherein signal generator comprises a radio frequency (RF) signal generator.

[0081] Embodiment 62: The system of any of Embodiments 55-61, wherein the instructions cause the at least one processor to, in response to receiving an input from a signal generator, cause the power management system to turn off the amplifier responsive to determining that the input is not received from the signal generator.

[0082] Embodiment 63: An amplifying system comprising:

a radio-frequency (RF) amplifier, the RF amplifier configured to receive an incoming RF signal having an input power through an input port and output an outgoing RF signal through an output port, the outgoing RF signal having an output power, the RF amplifier comprising a field-effect transistor (FET) that includes a gate terminal, a drain terminal and a source terminal; and a power management system configured to sense a current at the drain terminal of the FET or a temperature of the RF amplifier and adjust a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current or temperature, wherein for a given output power, the power management system is configured to provide an amount of bias voltage at the gate terminal that reduces third order intermodulation distortions (IMD3).

[0083] Embodiment 64: The amplifying system of Embodiment 63, wherein the power management system is configured to optimize another figures of merit of the RF amplifier selected from the group consisting of efficiency of the RF amplifier, gain of the RF amplifier, and output power of the RF amplifier.

[0084] Embodiment 65: The amplifying system of Embodiment 63, wherein the third order intermodulation distortions (IMD3) is reduced by an amount less than or equal to about 150 dB.

[0085] Embodiment 66: The amplifying system of Embodiment 63, wherein a drain efficiency obtained at the amount of gate bias voltage that reduces third order intermodulation distortions (IMD3) is lower than a maximum drain efficiency for the given output power.

[0086] Embodiment 67: A phased array system comprising:

a plurality of amplifying systems of Embodiment 63 arranged in a first array; and a plurality of antennas arranged in a second array, each of the plurality of antennas arranged in the second array being coupled to the output port of a corresponding one of the amplifying system in the first array.

[0087] Embodiment 68: The phased array system of Embodiment 67, configured as a radar system.

[0088] Embodiment 69: An amplifying module comprising:

a radio-frequency (RF) amplifier configured to receive an incoming RF signal having an input power through an input port and output an outgoing RF signal through an output port, the outgoing RF signal having an output power, the RF amplifier configured to be operated in a saturation mode in which the output power is approximately equal to saturation power of the RF amplifier and in a nonsaturation mode in which the output power is less than the saturation power of the RF amplifier, wherein the RF amplifier comprises a field effect transistor (FET) comprising a gate terminal, a drain terminal and a source terminal; and a power management system configured to: select an operating mode of the RF amplifier in response to an input received from a user or a controller external to the amplifying module, the operating mode being selected from a saturation mode and a non-saturation mode; and adjust an amount of bias power provided to the RF amplifier to operate the RF amplifier in the selected operating mode, wherein adjusting the amount of bias power provided to the RF amplifier comprises sensing a current at the drain terminal of the FET or a temperature of the RF amplifier and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current or temperature.

[0089] Embodiment 70: The amplifying module of Embodiment 69, wherein the power management system is configured to select the operating mode of the RF amplifier and adjust the amount of bias power to operate the RF amplifier in the selected operating mode in real-time.

[0090] Embodiment 71: The amplifying module of any of Embodiments 69-70, wherein the amount of bias power optimizes at least two figures of merit of the RF amplifier selected from the group consisting of linearity of the RF amplifier, efficiency of the RF amplifier, gain of the RF amplifier, and output power of the RF amplifier.

[0091] Embodiment 72: The amplifying module of any of Embodiments 69-71, wherein the power management system is further configured to adjust a frequency of the incoming RF signal.

[0092] Embodiment 73: An amplifying module comprising:

a radio-frequency (RF) amplifier configured to receive an incoming RF signal having an input power through an input port and output an outgoing RF signal through an output port, the outgoing RF signal having an output power, wherein the RF amplifier comprises a field effect transistor (FET) comprising a gate terminal, a drain terminal and a source terminal; and a power management system configured to:

select an operating class of the RF amplifier in response to an input received from a user or a controller external to the amplifying module; and adjust an amount of bias power provided to the RF amplifier to operate the RF amplifier in the selected operating class, wherein adjusting the amount of bias power provided to the RF amplifier comprises sensing a current at the drain terminal of the FET or a temperature of the RF amplifier and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current or temperature.

[0093] Embodiment 74: The amplifying module of Embodiment 73, wherein the power management system is configured to select the operating class of the RF amplifier and adjust the amount of bias power to operate the RF amplifier in the selected operating class in real-time.

[0094] Embodiment 75: The amplifying module of any of Embodiments 73-74, wherein the operating class of the RF amplifier is selected from the group consisting of class A, class B, class AB, class C, class D, class E, Class F, class G, class H, class S, and Class T.

[0095] Embodiment 76: The amplifying module of any of Embodiment 73-75, wherein the power management system is further configured to adjust a frequency of the incoming RF signal.

[0096] Embodiment 77: The amplifying module of any of Embodiments 73-76, wherein the amount of bias power optimizes at least two figures of merit of the RF amplifier selected from the group consisting of linearity of the RF amplifier, efficiency of the RF amplifier, gain of the RF amplifier, and output power of the RF amplifier

[0097] Embodiment 78: The amplifying module of any of Embodiments 73-77, wherein the power management system is further configured to adjust a frequency of the incoming RF signal.

[0098] Embodiment 79: The phased array system of Embodiment 67 configured as a communications system.

[0099] Embodiment 80: The phased array system of Embodiment 67 configured as an electronic counter measures system.

[00100] Embodiment 81: The amplifying module of Embodiment 69, wherein adjusting the amount of bias power provided to the RF amplifier comprises sensing a current at the drain terminal of the FET and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current.

[00101] Embodiment 82: The amplifying module of Embodiment 69, adjusting the amount of bias power provided to the RF amplifier comprises sensing a temperature of the RF amplifier and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed temperature.

[00102] Embodiment 83: The amplifying module of Embodiment 71, wherein adjusting the amount of bias power provided to the RF amplifier comprises sensing a current at the drain terminal of the FET and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current.

[00103] Embodiment 84: The amplifying module of Embodiment 71, adjusting the amount of bias power provided to the RF amplifier comprises sensing a temperature of the RF amplifier and adjusting a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed temperature.

[00104] Embodiment 85: The amplifying system of Embodiment 63, wherein the power management system is further configured to adjust a pulse width of the incoming RF signal.

[00105] Embodiment 86: The amplifying system of Embodiment 63, wherein the power management system is further configured to adjust a duty cycle of the incoming RF signal.

[00106] Embodiment 87: The amplifying system of Embodiment 63, wherein the power management system is further configured to adjust a power level of the incoming RF signal.

[00107] Embodiment 88: The amplifying system of Embodiment 63, wherein the power management system is configured to sense a current at the drain terminal of the FET and adjust a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed current.

[00108] Embodiment 89: The amplifying system of Embodiment 63, wherein the power management system is configured to sense a temperature of the RF amplifier and adjust a bias voltage at the gate terminal of the FET and a bias voltage at the drain terminal of the FET based on the sensed temperature

[00109] Embodiment 90: The amplifying module of Embodiment 69, wherein the power management system is further configured to adjust a pulse width of the incoming RF signal.

[00110] Embodiment 91: The amplifying module of Embodiment 69, wherein the power management system is further configured to adjust a duty cycle of the incoming RF signal.

[00111] Embodiment 92: The amplifying module of Embodiment 69, wherein the power management system is further configured to adjust a power level of the incoming RF signal.

[00112] Embodiment 93: The amplifying module of Embodiment 71, wherein the power management system is further configured to adjust a pulse width of the incoming RF signal.

[00113] Embodiment 94: The amplifying module of Embodiment 71, wherein the power management system is further configured to adjust a duty cycle of the incoming RF signal.

[00114] Embodiment 95: The amplifying module of Embodiment 71, wherein the power management system is further configured to adjust a power level of the incoming RF signal.

[00115] Embodiment 96: An amplifying system comprising:

a radio-frequency (RF) amplifier comprising an input port and an output port, the RF amplifier configured to receive an incoming RF signal through the input port and output an outgoing RF signal through the output port, wherein the RF amplifier comprises a field effect transistor (FET) with a gate terminal, a drain terminal, and a source terminal; and a power management system configured to, in response to an input received by the amplifying system, switch an operating class of the RF amplifier from a first operating class to a second operating class by adjusting an amount of bias power provided to the RF amplifier to operate the RF amplifier in the second operating class, wherein adjusting the amount of bias power provided to the RF amplifier comprises adjusting a bias voltage at the drain terminal of the FET.

[00116] Embodiment 97: The amplifying system of Embodiment 96, wherein the power management system is configured to adjust the amount of bias power based on receiving a feedback from the RF amplifier.

[00117] Embodiment 98: The amplifying system of any of Embodiments 9697, wherein the feedback received from the amplifier comprises at least one of a voltage at the drain terminal, a current at the drain terminal, a voltage at the gate terminal, a current at the gate terminal, or a temperature of the RF amplifier.

[00118] Embodiment 99: The amplifying system of any of Embodiments 9698, wherein the amplifying system is configured to receive the input from a user or a controller external to the amplifying system.

[00119] Embodiment 100: The amplifying system of any of Embodiments 9699, wherein the power management system is configured to switch the operating class of the RF amplifier in real-time.

[00120] Embodiment 101: The amplifying system of any of Embodiments 96100, wherein the first or second operating class is selected from the group consisting of class A, class B, class AB, class C, class D, class E, Class F, class G, class H, class S, and Class T.

[00121] Embodiment 102: The amplifying system of any of Embodiments 96101, wherein adjusting the amount of bias power provided to the RF amplifier optimizes at least two figures of merit of the RF amplifier selected from the group consisting of linearity of the RF amplifier, efficiency of the RF amplifier, gain of the RF amplifier, and output power of the RF amplifier.

[00122] Embodiment 103: The amplifying system of any of Embodiments 96102, wherein a power of the outgoing RF signal is different between the first operating class and the second operating class.

[00123] Embodiment 104: The amplifying system of any of Embodiments 96103, wherein adjusting the amount of bias power provided to the RF amplifier comprises adjusting a bias voltage at the gate terminal of the FET and the bias voltage at the drain terminal of the FET.

[00124] Embodiment 105: A radio-frequency (RF) device comprising:

an RF amplifier; and a power management system configured to, in response to an input received by the RF device, operate the RF amplifier in a first mode for a first duration of time and in a second mode for a second duration of time, wherein the power management system is configured to provide a first amount of bias power to the RF amplifier in the first mode and a second amount of bias power to the RF amplifier in the second mode. [00125] Embodiment 106: The RF device of Embodiment 105, wherein the RF amplifier comprises a field effect transistor (FET) with a gate terminal, a drain terminal, and a source terminal, and wherein the power management system is configured to provide the first amount of bias power by providing a first voltage at the drain terminal of the FET and provide the second amount of bias power by providing a second voltage at the drain terminal of the FET.

[00126] Embodiment 107: The RF device of any of Embodiments 105-106, wherein the power management system is configured to, in response to the input received by the RF device, operate the RF amplifier in a third mode for a third duration of time, wherein the power management system is configured to provide a third amount of bias power to the RF amplifier in the third mode.

[00127] Embodiment 108: The RF device of any of Embodiments 105-107, wherein the third mode is selected from a group consisting of a radar mode, a highpower microwave mode, a directed energy mode and a communications mode.

[00128] Embodiment 109: The RF device of any of Embodiments 105-108, wherein the RF amplifier comprises a field effect transistor (FET) with a gate terminal, a drain terminal, and a source terminal, and wherein the power management system is configured to provide the third amount of bias power by providing a third amount of voltage at the drain terminal, the third amount of voltage different from a first amount of voltage provided at the drain terminal in the first mode and second amount of voltage provided at the drain terminal in the second mode.

[00129] Embodiment 110: The RF device of any of Embodiments 105-109, wherein the first mode or the second mode is selected from a group consisting of a radar mode, a high-power microwave mode, a directed energy mode and a communications mode.

[00130] Embodiment 111: The RF device of any of Embodiments 105-110, wherein an amount of power of a signal output by the RF amplifier is different between the first mode of operation and the second mode of operation.

[00131] Embodiment 112: The RF device of any of Embodiments 105-111, wherein an amount of bias power provided by the power management system to the RF amplifier is determined based on a sensed parameter of the RF amplifier.

[00132] Embodiment 113: The RF device of any of Embodiments 105-112, wherein the sensed parameter of the RF amplifier comprises a current, voltage or temperature.

[00133] Embodiment 114: A method of operating a radio-frequency (RF) device, the method comprising: by a power management system of the RF device: in response to an input received by the RF device, operating an RF amplifier of the RF device in a first mode for a first duration of time and in a second mode for a second duration of time, wherein operating the RF amplifier in the first mode comprises providing a first amount of bias power to the RF amplifier, and wherein operating the RF amplifier in the second mode comprises providing a second amount of bias power to the RF amplifier.

[00134] Embodiment 115: The method of Embodiment 114, wherein:

the RF amplifier comprises a field effect transistor (FET) with a gate terminal, a drain terminal, and a source terminal;

providing the first amount of bias power comprises providing a first voltage at the drain terminal of the FET; and providing the second amount of bias power comprises providing a second voltage at the drain terminal of the FET.

[00135] Embodiment 116: The method of any of Embodiments 114-115, further comprising, by the power management system: in response to the input received by the RF device, operating the RF amplifier in a third mode for a third duration of time by providing a third amount of bias power to the RF amplifier.

[00136] Embodiment 117: The method of any of Embodiments 114-116, wherein:

the RF amplifier comprises a field effect transistor (FET) with a gate terminal, a drain terminal, and a source terminal; and providing the third amount of bias power comprises providing a third amount of voltage at the drain terminal, the third amount of voltage different from a first amount of voltage provided at the drain terminal in the first mode and second amount of voltage provided at the drain terminal in the second mode.

[00137] Embodiment 118: An amplifying system comprising:

a radio-frequency (RF) amplifier, the RF amplifier configured to receive an incoming RF signal having an input power through an input port and output an outgoing RF signal through an output port, the outgoing RF signal having an output power, the RF amplifier comprising a field effect transistor (FET) amplifier comprising a gate terminal, a drain terminal and a source terminal; and a power management system configured to:

provide a first bias voltage at the gate terminal that would turn on the amplifier in response to receiving an indication that the incoming RF signal is applied to the input port;

sense a current at the drain terminal while the amplifier is turned on;

modulate the first bias voltage at the gate terminal to maintain the current at the drain terminal at a threshold level while the amplifier is turned on; and provide a second bias voltage at the gate terminal that would turn off the amplifier in response to receiving an indication that the incoming RF signal is not applied to the input port.

[00138] Embodiment 119: The amplifying system of Embodiment 118, wherein the threshold level of the current at the drain terminal corresponds to an amount of the drain current that the amplifier draws when it is being operated in saturation.

[00139] Embodiment 120: The amplifying system of Embodiment 118, wherein the threshold level of the current at the drain terminal corresponds to an amount of the drain current that the amplifier draws when it is being operated to provide a maximum amount of gain.

[00140] Embodiment 121: The amplifying system of any of Embodiments 118120, wherein the threshold current level is pre-determined.

[00141] Embodiment 122: The amplifying system of any of Embodiments 118121, wherein the power management system is further configured to modulate a bias voltage to the drain terminal to maintain the current at the drain terminal at the threshold level.

[00142] Embodiment 123: The amplifying system of any of Embodiments 118122, wherein the power management system comprises a current sensor configured to the sense the current at the drain terminal.

[00143] Embodiment 124: The amplifying system of any of Embodiments 118123, wherein the power management system is configured to sense the current at the drain terminal and modulate the first bias voltage at time intervals between 1 microsecond and 10 microseconds.

[00144] Embodiment 125: The amplifying system of any of Embodiments 118124, wherein the power management system is configured to sense the current at the drain terminal and modulate the first bias voltage continuously.

[00145] Embodiment 126: A phased array system comprising:

a plurality of amplifying systems of any of Embodiments 118-125, arranged in a first array; and a plurality of antennas arranged in a second array, each of the plurality of antennas arranged in the second array being coupled to the output port of a corresponding one of the amplifying system in the first array.

[00146] Embodiment 127: The phased array system of Embodiment 126, configured as a radar system, a communications system, or an electronic counter measures system.

[00147] Embodiment 128: The phased array system of any of Embodiments 126-127, wherein the threshold level of drain current for different amplifiers of the plurality of amplifying systems is different.

[00148] Embodiment 129: The phased array system of any of Embodiments 126-128, wherein the first bias voltage at the gate terminal for different amplifiers of the plurality of amplifying systems is different.

[00149] Embodiment 130: The phased array system of any of Embodiments 126-129, wherein the second bias voltage at the gate terminal for different amplifiers of the plurality of amplifying systems is different.

[00150] Embodiment 131: The phased array system of any of Embodiments 126-130, configured to output a pulsed electromagnetic system with pulses having a duration greater than or equal to 5 ns and less than or equal to 1 ps.

[00151] Embodiment 132: The phased array system of any of Embodiments 126-130, configured to output a pulsed electromagnetic system with pulses having a duration greater than 1 ps and less than 50 ps.

[00152] Embodiment 133: The phased array system of any of Embodiments 126-130, configured to output a pulsed electromagnetic system with pulses having a duration greater than or equal to 50 ps and less than or equal to 300 ps.

[00153] Embodiment 134: The phased array system of any of Embodiments 126-133, wherein one or more amplifiers of the plurality of amplifying systems are electrically connected with a multi-level capacitor network comprising one or more large storage capacitors.

[00154] Embodiment 135: A system for controlling an amplifier, the system comprising:

an amplifier;

a power management system in communication with the amplifier, the power management system configured to convert power received from an external power supply to a voltage that turns on the amplifier;

a sensing system configured to sense a level of a current in the amplifier; and a hardware computing system comprising at least processor and memory, wherein the memory stores instructions that, when executed by the at least one processor, cause the at least one processor to:

in response to receiving an input from a signal generator, cause the power management system to supply the voltage to the amplifier to turn on the amplifier;

sense the level of the current in the amplifier; and adjust the voltage that turns on the amplifier to maintain the level of the current in the amplifier at a threshold level.

[00155] Embodiment 136: The system of Embodiment 135, wherein the current sensed by the sensing system is indicative of a temperature of the amplifier.

[00156] Embodiment 137: The system of any of Embodiments 135-136, wherein the sensing system comprises a current sensor.

[00157] Embodiment 138: The system of any of Embodiments 135-137, wherein the amplifier comprises a three terminal device including a gate terminal, a drain terminal, and a source terminal, wherein the sensing system is configured to sense current at the drain terminal, and wherein the power management system is configured to supply a bias voltage to the gate terminal and adjust the bias voltage provided to the gate terminal to maintain the current at the drain terminal at the threshold level.

[00158] Embodiment 139: The system of any of Embodiments 135-138, wherein the power management system is further configured to adjust a bias voltage provided to the drain terminal to maintain the current at the drain terminal at the threshold level.

[00159] Embodiment 140: The system of any of Embodiments 135-139, wherein the amplifier is configured to provide an amplifier gain, and wherein the power management system is configured to adjust the bias voltage provided to the gate terminal to maintain the amplifier gain at a threshold gain value.

[00160] Embodiment 141: The system of any of Embodiments 135-140, wherein signal generator comprises a radio frequency (RF) signal generator.

[00161] Embodiment 142: The system of any of Embodiments 135-141, wherein the instructions cause the at least one processor to, in response to receiving an input from a signal generator, cause the power management system to turn off the amplifier responsive to determining that the input is not received from the signal generator.

[00162] Embodiment 143: A power management system configured to provide a voltage or a current to an amplifier, the power management system comprising: an electronic processing system;

a power adapting system configured to convert power received from an external power supply to a voltage that turns on an amplifier connected to the power management system;

a sensing system configured to sense a current from the amplifier; and a memory connected to the electronic processing system, the memory storing instructions that, when executed by the electronic processing system, cause the electronic processing system to:

receive an input being indicative of a signal being applied to the amplifier;

in response to receiving the input, cause the power adapting system to provide a bias voltage to the amplifier configured to turn on the amplifier;

receive via the sensing system, a current value from the amplifier, the sensed current value being indicative of a state of the amplifier; and cause the power adapting system to modulate the bias voltage based on the received current value.

[00163] Embodiment 144: The system of Embodiment 143, wherein the power adapting system is configured to modulate the bias voltage to maintain the sensed current value at a threshold amount.

[00164] Embodiment 145: The system of any of Embodiments 143-144, wherein the electronic processing system is configured to cause the power adapting system to provide a voltage that turns off the amplifier in response to an input being indicative of a signal not being applied to the amplifier.

[00165] Embodiment 146: The system of any of Embodiments 143-145, wherein the sensed current value is indicative of a temperature of the amplifier.

[00166] Embodiment 147: The system of any of Embodiments 143-146, wherein the amplifier the electronic processing system is configured to change the provided voltage or current based on the sensed current such that a power efficiency of the amplifier is maintained at 70% or above over the duration of operation of the amplifier.

[00167] Embodiment 148: The system of any of Embodiments 143-147, connected to an amplifier comprising a field effect transistor (FET) having a gate terminal and a drain terminal, and wherein the power adapting system is configured to provide a voltage to the gate terminal of the FET.

[00168] Embodiment 149: The system of any of Embodiments 143-148, wherein the electronic processing system is configured to turn on and turn off the voltage provided to the gate terminal of the FET based on the received input.

[00169] Embodiment 150: The system of any of Embodiments 143-149, wherein the electronic processing system is configured to turn on and turn off the voltage provided to the gate terminal of the FET within a few microseconds of receiving the input.

[00170] Embodiment 151: The system of any of Embodiments 143-150, wherein the sensing system is configured to receive current from the drain terminal of the FET.

[00171] Embodiment 152: The system of any of Embodiments 143-151, wherein the electronic processing system is configured to change the bias based on the sensed current such that a power efficiency of the amplifier operating at a first temperature T1 is within 10% of a power efficiency of the amplifier operating at a second temperature T2.

[00172] Embodiment 153: The system of Embodiment 152, wherein the first temperature T1 is greater than or equal to 50 degrees Celsius and less than or equal to 120 degree Celsius.

[00173] Embodiment 154: The system of Embodiment 152, wherein the first temperature T1 is greater than or equal to -20 degrees Celsius and less than or equal to 20 degree Celsius.

[00174] Embodiment 155: The system of Embodiment 152, wherein the second temperature T2 is greater than or equal to 20 degrees Celsius and less than or equal to 35 degree Celsius.

[00175] Embodiment 156: The system of Embodiment 152, wherein the first temperature T1 is above room temperature and the second temperature T2 is at room temperature.

[00176] Embodiment 157: The system of Embodiment 152, wherein the first temperature T1 is below room temperature and the second temperature T2 is at room temperature.

[00177] Embodiment 158: The system of any of Embodiments 143-158, configured to provide voltage or current to a plurality of amplifiers, and wherein the electronic processing system is configured to:

receive via the sensing system current values from each of the plurality of amplifiers; and cause the power adapting system to change the bias to each of the plurality of amplifiers based on current value received from each of the plurality of amplifiers.

[00178] Embodiment 159: The system of Embodiment 158, wherein the power adapting system is configured to change the bias to each of the plurality of amplifiers to maintain the corresponding sensed current value at a threshold level.

BRIEF DESCRIPTION OF THE FIGURES

[00179] The disclosure is more fully appreciated in connection with the following detailed description taken in conjunction with the accompanying drawings, in which:

[00180] Figure 1 illustrates an RF signal generating apparatus.

[00181] Figure 2 more fully characterizes components of Figure 1.

[00182] Figure 3 illustrates a power sequencer.

[00183] Figure 4A illustrates power electronics.

[00184] Figure 4B illustrates an implementation of a gate biasing system comprising a switching element which is triggered by the incoming RF signal. Figure 4C schematically illustrates the switching element depicted in Figure 4B.

[00185] Figure 5 illustrates power electronics control signals.

[00186] Figure 6 illustrates an RF signal.

[00187] Figure 7 illustrates the system of Figure 1 utilizing a reflector and mechanical gimbal.

[00188] Figure 8A illustrates another implementation of the system of Figure 2.

[00189] Figure 8B illustrates an implementation of a power management system.

[00190] Figure 8C is a schematic illustration of an amplifier in the amplifier chain that is being controlled by the power management system.

[00191] Figure 9 illustrates the correlation between the drain current and the device temperature for an implementation of a FET amplifier.

[00192] Figure 10 shows the rise in temperature for two different operating conditions of an amplifier.

[00193] Figures 11A and 11B show the effects of gate switching and drain switching in charging storage capacitors.

[00194] Figure 12 illustrates a flow chart of operations performed by the power management system.

[00195] Figure 13 illustrates a process implemented by a smart slave circuit.

[00196] Figure 14 illustrates a display showing the health of a system comprising a plurality of amplifiers.

[00197] Figure 15 schematically illustrates another implementation of a power management system that is configured to dynamically adjust bias power provided to an amplifier.

[00198] Figure 16 shows the variation of the amount of third order intermodulation distortion as a function of drain efficiency for different levels of input and output power.

[00199] Figure 17 shows the variation of output power versus input power for an implementation of an amplifier.

[00200] Figure 18 shows the ability of the power management system that is configured to dynamically adjust bias power provided to an amplifier to switch the operating modes of the amplifier between three different operating modes.

[00201] Figure 19 is a simulation showing the amount of electro-magnetic radiation that is coupled to a circuit comprising wires of different lengths as the frequency of the electro-magnetic radiation is varied.

[00202] Figure 20 is a flowchart schematically showing a method of estimating the resonant frequency of an electrical circuit/component.

[00203] Figure 21 illustrates an implementation of a testing system including a high power RF transmitter.

[00204] Like reference numerals refer to corresponding parts throughout the several views of the drawings.

DETAILED DESCRIPTION

[00205] Figure 1 illustrates an RF signal generating apparatus 100. The RF signal may be generated in response to a user command entered at a keyboard. In one embodiment, the RF signal is generated in response to the identification of a target by a target detector 101, such as a camera utilizing computer vision algorithms. Consider the case of an unmanned aerial vehicle or drone, the target detector 101 collects a signature characterizing the flight attributes of the drone. The target detector 101 also collects free space parameters associated with the drone, such as azimuth angle, elevation and range. Embodiments described collect this information when the target is 500 to 300 meters from the target detector 101. The signature and free space parameters are passed from the target detector to a central computer 102.

[00206] The central computer 102 classifies the target and selects RF waveform parameters, which are passed to an RF signal generator 103. In various implementations, the RF signal generator 103 can be programmable and controlled by the computer 102 to change various parameters of the generated RF signal including but not limited to frequency and power of the RF signal. The RF signal generator 103 creates RF signals in accordance with the RF waveform parameters. Each RF signal has a waveform of the frequency, pulse width, pulse repetition interval and intra-pulse modulation specified by the RF waveform parameters received from the central computer 102. The frequency, pulse width, pulse repetition interval and intra-pulse modulation of the generated RF signal can be changed by the computer 102 in real time or sufficiently real time.The RF signal generator 103 produces RF signals for multiple channels that are applied to amplifier chains 104_l through 104_N. The RF signals for the multiple channels are phase shifted relative to one another in accordance with RF frequency waveform parameters. In one embodiment, the phase shifting is digitally performed within the RF signal generator 103. Alternately, analog phase shifters may shift the RF signals prior to applying them to the amplifier chains 104_l through 104_N. In some implementations, the amplitude of some of the RF signals for the multiple channels can be attenuated as compared to the amplitude of some other of the RF signals for the multiple channels. Although, in the illustrated implementation, the computer 102 is distinct from the RF signal generator 103, in various other implementations, the computer 102 and the RF signal generator 103 can be integrated together. Each amplifier chain has a plurality of solid-state power amplifiers, each of which has a gate voltage on set point derived from an automatic calibration operation, as detailed below. Some of the plurality of solid-state power amplifiers may be arranged serially/sequentially in some implementations. Some of the plurality of solid-state power amplifiers may be arranged in a power combining configuration. Each amplifier chain produces an amplified RF signal. In one embodiment, a few mW RF signal from the RF signal generator 103 is amplified to a few kWs. The amplifier chain may utilize a combination of solid-state amplifiers, including silicon laterally diffused metal-oxide semiconductors, Gallium Nitride, Scandium Aluminum Nitride, GaAs and InP.

[00207] The channels of RF signals from the amplifier chains 104_l through 104_N are applied to an antenna array 106. Each amplifier chain has a corresponding antenna in the antenna array 106. The antenna array 106 broadcasts the channels of RF signals as a steered composite RF signal with Megawatts of radiated power. That is, individual RF signals emitted from different antennae in the antenna array 106 interact in free space to generate a composite RF signal that is directed to a specified location corresponding to the location of the target. The antenna array 106 may include a mechanical gimbal to position individual antennae. In various implementations, the antenna array 106 can further amplify the RF signal by about 10 - 1000 times.

[00208] The RF signal generator 103 also sends control signals to the power sequencer 105. The control signals gate amplifiers in the amplifier chains 104_l through 104_N to produce the channels of RF signals. The control signals ensure that little (e.g., micro to nano amps) leakage or quiescent current is drawn when an RF signal is not being generated. The leakage and quiescent current can be quite large in high power amplifiers circuits if not gated. In one embodiment, the RF signals and power gating signals are turned on and off in 10s of nanoseconds.

[00209] The amplified RF signals from the amplifier chains 104_l through 104_N are applied to an antenna array 106. The phased array RF signals form a steered composite RF signal to disable a target, typically when it is approximately 100 meters from the antenna array 106. The steered composite RF signal has Megawatts of radiated power.

[00210] System 100 also includes an AC power source 107 for the different elements of system 100. The AC power source may operate with a power distributor 108, which applies power to the power sequencer 105. In one embodiment, the power distributor 108 converts from AC to DC power. Generally, the conversion from AC to DC can happen either locally at each amplifier or at the system level.

[00211] Figure 2 illustrates details of certain components in system 100. Central computer 102 includes a processor or central processing unit 200 connected to a memory 202. The memory 202 stores instructions executed by processor 200. The instructions include a target classifier 204. In one embodiment, the target classifier 204 matches the signature of the attributes of the target to a waveform in a waveform look-up table 206. The waveform selector 208 designates a waveform to disable the target. The designated waveform also includes free space parameters to ensure that the steered composite RF signal intercepts the target. The steered composite RF signal is formed by a collection of phase offset RF signals. The central computer passes RF waveform parameters to the RF signal generator 103. The RF waveform parameters include information about azimuth angle and elevation angle of the target, azimuth and elevation angle of friendly targets that do not need to be disabled, frequency of the RF waveform, pulse width and duty cycle of the RF pulses, position and height/depth of peaks/nulls in the RF beam.

[00212] In one embodiment, the RF signal generator 103 is implemented as an RF system on a Chip Field Programmable Gate array (RFSoC FPGA). The RFSoC FPGA 103 includes a gate array 210 and a direct digital synthesizer 212 that creates waveforms of the frequency, pulse width, pulse repetition interval and intra-pulse modulation specified by the RF frequency waveform parameters generated by the central computer 102. The gate array 210 is configured to perform a variety of functions including but not limited to determining the time intervals at which different components of the amplifier is powered up and powered down. The waveforms are passed to a collection of digital-to-analog (DAC) converters 214_1 through 214_N. Outputs from the DACs 214_1 through 214_N are optionally conditioned by signal conditioning units (SCUs). In various implementations, the SCUs can comprise filters 216_1 through 216_N as depicted in Figure 2. The filters 216_1 through 216_N may filter the RF signals to a frequency band of interest. In some implementations, the SCUs can comprise one or more phase shifters and/or attenuators that can achieve the desired azimuth and elevation angles for the generated RF beam. The outputs from the RF signal generator 103 are applied to amplifier chains 104_l through 104_N. Each amplifier chain terminates in an antenna of antenna array 106, such as antennae 220_l through 220_N. The RFSoC FPGA 103 allows digital formation of signal beams which has several advantages including but not limited to increasing/maximizing signal power in certain regions of space and decreasing/minimizing signal power in certain other regions of space. Accordingly, signal power can be focused on targets in certain regions of space while reducing the signal power on targets in certain other regions of space. Digitally forming signal beams as discussed above also advantageously allow the power, frequency and other parameters of the signal beam to be changed in sufficiently real time (e.g., in less than 1 millisecond).

[00213] Figure 3 is a block diagram of different components of Figures 1 and 2, including the RF signal generator 103, power sequencer 105, and an amplifier chain 104_l. The RF signal generator 103 receives a control signal from central computer 102 on node 301. A synchronizing clock signal is received on node 303.

[00214] A broadcast signal on node 304, an Ethernet signal in one embodiment, is sent to a plurality of power sequencing smart slave units 309. In the one embodiment, the broadcast signal is distributed through a router 307. The broadcast signal initiates a calibration mode in smart slave circuits 309, such that they identify the optimal “on” set point gate voltage for the power amps 311.

[00215] The RF signal generator 103 sends a very fast signal with deterministic delay, such as a Low Voltage Differential Signal (LVDS) to power sequencer 105. The power sequencer 105 operates as a master power sequencing gating unit that simultaneously controls smart slave devices 309. In particular, the power sequencer 105 sends a master voltage to the slave units 309_l and 309_2. The slave units 309_l and 309_2 offset this master voltage with their individual voltage offsets that they established in calibration mode, so that each power amplifier has an optimal gate voltage. Many power amplifiers have different optimal set gate voltages for “on” operation; the disclosed circuits can be configured such that each individual power amp 311 has its own set point.

[00216] The RF signal generator 103 synchronizes using “on” signals applied to the power sequencers 105. The RF signal generator 103 also applies an RF signal on node 310, which is propagated through power amps 311. The power amp chain may have one or more filters 312. A portion of the RF signal from the amplifier can be tapped by a coupler 313 and sent back to the RF signal generator 103 or the computer 102 for monitoring purposes. The monitored information can include information regarding the phase, amplitude, power level and timing of the power amplifiers. The monitored information is considered to update timing and control algorithms.

[00217] The RF signal is amplified through the power amplifiers 311 and is sent to an antenna 314 of the antenna array 106. The output from the different antennae of the antenna array 106 form a steered composite RF signal.

[00218] Power efficiency and linearity are important figures of merits (FoMs) for amplifier based systems. Power efficiency in field effect transistor (FET) amplifier (e.g., gallium nitride (GaN) FET amplifier) based systems can be improved by controlling the voltages provided to the gate and the drain terminals of a FET amplifier. Various implementations of a FET or a High Electron Mobility Transistor (HEMT) amplifier that is configured to be operated in saturation can benefit from a bipolar gate supply which can source and sink current. The bipolar gate supply can advantageously maintain the gate voltage at a desired voltage level.

[00219] Various implementations described herein include a bipolar high impedance gate driver that can source or sink current when the amplifier is operated at or near saturation. In addition to maintaining the gate voltage at a desired level, the bipolar high impedance gate driver can draw minimal amount of DC current and dynamically provide current to the gate terminal of the amplifier when the signal to be amplified is input to the amplifier. Various implementations of a bipolar high impedance gate driver described herein comprise an operational amplifier (opamp). The bipolar high impedance gate driver can improve various measures of efficiency for amplifier-based systems including drain efficiency, power-added efficiency, total efficiency, amplifier efficiency and waii-pfug efficiency.

[00220] Figure 4A ihustrates an impfementation of a system comprising a pfurafity of high power ampfifiers (e.g., ampfifier 4W) that are driven by corresponding bipofar high impedance gate drivers (e.g., driver 407). The voitage and/or current output from the bipofar high impedance gate drivers is controffed by a power controiier (e.g., controiier 309). As discussed above, the power controiier can comprise a master controf unit (e.g., power sequencer 105 discussed above) and a pfurafity of stave controf units (e.g., stave units 309_l and 309_2 discussed above). In some embodiments, the master control unit and the slave control units can be implemented as separate devices. In some other embodiments, the master control unit and the slave control units can be implemented as a single device.

[00221] Referring to Figure 4A, the RF signal generator 103 applying an “on” signal from node 408 to the power sequencer 105, operates as a master power gating and sequencing circuit that controls slave power amplifiers 311. In one embodiment, this signal is a Low voltage differential signal (LVDS) that controls a switch 403, which causes current from power supply 404 to flow during an “on” state and stops current flow in “off’ state. The power supply voltage 404 can provide an offset voltage, which is added to an off voltage Voff 406 when the switch 403 is closed. In some embodiments, the amplifier 410 can be Gallium Nitride devices. In such embodiments, the off voltage Voff 406 can be about -5 Volts and the power supply voltage 404 can be about 3 volts. Accordingly, the output voltage at node 409 is about -2 Volts, which is approximately the gate voltage that turns on Gallium Nitride amplifiers 410. When the switch is open, the output voltage on node 409 defaults back to the off voltage Voff, which is -5 Volts in one embodiment, which is the gate voltage that turns Gallium Nitride transistors off and reduces leakage current down to about 10 microamps. The value of the off voltage Voff and the offset voftage can be different from -5 Vofts and 3 Vofts respectively depending on the turn-on voltage of the amplifier 410. Node 411 carries a broadcast signal that initiates the auto-calibrate operation of the smart slave circuits 309. In one embodiment, each smart slave circuit 309 is implemented with an FPGA configured to determine the optimal gate voltage set point for turning on a slave amplifier.

[00222] Digital to analog converter (DAC) 413 provides an offset voltage that gets added to the master voltage on node 409. This offset voftage is tuned to each individuaf power ampfifier 410 to provide optimaf set point bias voftage Vgi on node 414 and maximum power out from the power amp 410. It also enables optimum voltage in the “off’ state and minimizes leakage current. The master-slave architecture facilitates fine grained voltage offsets, which is advantageous in efficient operation of many transistors, which may be sensitive to gate voftage offsets at the miffivoft fevef. In some implementations, the disclosed technology maximizes voltage offset resolution. For example, the master-slave architecture can advantageously change the voltage provided to the gate terminal of the amplifier in increments of 1 millivolt or fess.

[00223] The smart slave 309 controls a plurality of DACs 413 and stores different optimum set points for both the on and off states for each power amplifier. In the auto-calibration mode, the current sensor 415 is used to feedback a current reading to the smart slave 309. This voltage offset on node 413 is tuned very slightly, by the minivoft in one embodiment, unfit the current sensed from sensor 415 reaches an optimum current vafue, as per the data sheets for the power ampfifiers 410. This voltage offset is stored. This process is repeated to minimize the current in “off’ state. The current can also be sensed during active operation to determine the viability of the power amp. If the current starts to degrade or change or significantly decrease, this can indicate that the amplifier is damaged and needs to be replaced or can indicate that the temperature is out of range for optimal operation. This method of adjusting the voltage offset on node 413 based on the current sensed from 415 is explained in further detail below with reference to Figures 8-13.

[00224] The capacitor 416 can be tuned (manually or electronically) to change the rise and fall time for the gate bias signal on node 414. For example, in some embodiments, capacitor 416 is real time programmable by the smart control FPGA 309, such as by a series of switches, to include a variable amount of capacitance in the feedback path 416. This is a useful feature because different power amplifiers 410 can each have a different gate capacitance. Capacitor 416 can be tuned based on the gate capacitance for optimal operation. Tuning capacitor 416 affects how fast or slow the rise time is on the gate voltage at node 414, this effects speed and efficiency of the power gating. Changing the charge on capacitor 416 can also change the amount of time the power amplifier rings or oscillates. In other embodiments, capacitor 416 is configured to tune the rise and fall time for very fast operation.

[00225] As discussed above, the computer 102 receives a signal from the target detector 101, such as a sensor/camera in some embodiments or radar in other embodiments, and triggers a target detection algorithm. The computer 102 classifies the target and selects a waveform that can disable the target. Various parameters of the waveform and details about the target are transmitted to the RF generator. The computer 102 also triggers the various amplifier chains 104_l to 104_N with a signal to start the power sequencing for each amplifier in the amplifier chains. The signals are sent to each amplifier in the amplifier chains such that the power sequence is started at the same time, in a coherent, synchronized way. The voltage sequence timing diagram is shown and described below with reference to Figures 5 and 6. As used herein, power sequencing comprises providing appropriate values to the various terminals of an amplifier (e.g., gate, source and drain) turn on/ turn off the amplifiers.

[00226] Power sequencing also turns on the power gating circuitry, which switches on the voltage/current supply to the amplifiers (e.g., the high voltage power amplifiers). The RF waveform digital circuitry is triggered simultaneously to send an array of RF signal inputs to the amplifier chains. As discussed below with reference to Figures 5 and 6, the amplifiers are turned on for short period when a target has been acquired which advantageously allows the system to emit RF signals high peak power (e.g., of the order of Megawatts) with low average power (e.g., less than 5 kW).

[00227] Figure 4B schematically illustrates an implementation of a gate biasing system that is triggered automatically by an incoming RF signal. The gate biasing system comprises a switching element 420 which is triggered by the incoming RF signal. Figure 4C shows an implementation of the switching element 420. The switching element 420 can comprise a Schottky detector 422 and a comparator/switch 424. When the signal generator 103 outputs a RF signal, the Schottky detector produces a RF detect voltage which is greater than a reference voltage of the comparator/switch 424 thereby causing the comparator/switch 424 to be in the closed state and output a bias voltage Von which turns on the amplifier 311. For an implementation of the amplifier 311 comprising a GaN device, the output voltage Von can be in a range between -2V and -5 V. The slave unit 309 can provide a tunable offset voltage which can the adjust the bias voltage Von to optimize one or more performance metrics of the amplifier 311. In the absence of the RF signal from the signal generator 103, the switch 424 may be considered to be in the open state which causes a voltage Voff to be provided to the amplifier 311 which turns the amplifier 311 off. For an implementation of the amplifier 311 comprising a GaN device, the output voltage Voff can be less than -5.5V, such as, for example, between about -12V and about -6V. The schematic shown in Figures 4B and 4C can be an alternate implementation which is triggered by the RF signal itself instead of a control signal from the RF signal generator 103.

[00228] Figure 5 illustrates waveforms that may be used in conjunction with the circuitry of Figure 4A. The supply voltage 501 (Vsupply in Figure 4A) to the power amp (410 in Figure 4A) is turned on first. Alternately, it may be left on all the time. The gate voltage waveform 502 is applied to node 43 of Figure 4A. Then, the RF signal from RF signal generator 103 is applied to node 414. This example is for a 65 Volt Gallium Nitride (GaN) solid state power amplifier, but the principle may generally apply to any solid-state power amplifier. The drain voltage 501 toggles from 0 Volts to 65 Volts. Then, the source current is tuned from -5 Volts to -2 Volts, where it is considered “open” and the transistor is “on” so that a quiescent current starts to flow. Finally, the RF input signal 503 is applied and the transistor draws active power once the RF power is on, in some embodiments up to 30 amps of current create 1,500 watts of power out of the transistor 410.

[00229] The RF signal 503 is sent out as a short pulse, for example, as short as 10 ns or as long as milliseconds. The length of the pulse depends on the type of target. After the RF pulse is complete, the source voltage is pinched off back down to -6 Volts, and then shortly after the drain voltage is tuned from 65 Volts down to 0 Volts and the transistor is off and therefore draws minimal current.

[00230] Figure 6 illustrates a timing diagram showing a non-linear pulse train 601 with uneven pulses. The pulse train 601 is sent through power amp 410, where the RF and voltage bias is turned on and off very quickly (e.g., 10s of nanoseconds). In one embodiment, the pulses are in an arbitrary pattern at a frequency of 1 GHz.

[00231] Figure 7 illustrates a system 700 corresponding the system 100 of Figure 1. However, in this embodiment, the antenna array 106 transmits its RF power signal to a reflector 700. For example, 16 antennae operating at the L-band frequency with halfwavelength spacing may transmit into a 3 meter reflector dish. The reflector dish may have a subreflector. A mechanical gimbal 702 may control the position of the reflector 700 in response to control signals from central computer 102.

[00232] The 3 meter reflector dish provides 28.1 dBi, or 645X linear magnification of the energy. In one embodiment, the reflector dish is fed by a 16 element phased array antenna in a 4x4 array. At a 1% duty cycle and 70% power efficiency, the power system only requires 550 watts of DC power output, enabling a small power supply.

[00233] The implementations of the phased array systems described above are configured to be software defined via element level digital control of each channel of the phased array. Hie RF signal input to the phased array can be generated digitally without requiring RF or analog components using novel transmitter schemes (e.g., a monobit transmitter).

Power Management System to Adjust Bias Condition of RF Amplifiers

[00234] Figure 8A illustrates another implementation of the system 100 of Figure 2. The system 100 is illustrated as being augmented with a plurality of power management systems 809_l to 809_N configured to provide the required voltages and currents to efficiently operate the amplifiers in the amplifier chains 104_l to 104_N. In various implementations, the power management systems 809_l to 809_N can comprise or be associated with a power distributing system similar to the power distributor 108 and/or a power sequencing system similar to the power sequencer 105. Individual power management systems 809_l to 809_N are configured to (i) in response to receiving a signal from the RF generator 103 provide appropriate bias voltages and currents to turn-on the amplifiers in the corresponding amplifier chains 104_l to 104_N prior to/synchronously with the arrival of the RF signal from the RF generator 103; (ii) adjust or change the bias voltages and currents to the amplifiers based on information obtained about the input signal characteristics, output signal characteristics, system operating conditions (e.g., operating temperature, operating currents/voltages at various terminals of the amplifier/system, etc.), an input received from a user or an electronic processing system controlling the biasing systems and/or by information obtained from look-up tables that provide an understanding of the state of the amplifier; and/or (iii) reduce the bias voltages and currents to turn-off the amplifiers in the corresponding amplifier chains 104_l to 104_N in response to absence of signal to be amplified or a sensed characteristic (e.g., input signal power, output signal power, temperature, gate current/voltage or drain current/voltage) being outside a range of values.

[00235] As discussed above, the plurality of power management systems 809_l to 809_N can comprise sensors (e.g., current sensors) that can sense current values (e.g., drain and/or gate current values) of the individual amplifiers in the amplifier chains 104_l to 104_N. The power management systems 809_l to 809_N can be configured to sense the current values of the individual amplifiers in the amplifier chains 104_l to 104_N intermittently (e.g., periodically). In some implementations, the power management systems 809_l to 809_N can be configured to sense the current values of the individual amplifiers in the amplifier chains

104_l to 104_N continuously. In various implementations, the output from the current sensor can be sampled using an analog to digital converter (ADC) and averaged over a number of samples (e.g., 128 samples, 512 samples, etc.) to obtain the sensed current value.

[00236] The sensed current value can be analyzed by the power management systems 809_l to 809_N to determine an operational or a physical characteristic (e.g., temperature, input/output signal power, voltage/current at various terminals of the amplifier) of the individual amplifier. For example, a sensed current value above a first threshold current value when the amplifier is not turned on can be indicative of a defect in the amplifier or a defect in the circuit board on which the amplifier is mounted. As another example, a sensed current value above a second threshold current value when the amplifier is turned on but no signal to be amplified is provided to the input can be indicative of a defect in the amplifier or a rise in the temperature of the amplifier. As yet another example, a sensed current value above a third threshold current value when the amplifier is turned on and a signal to be amplified is provided to the input can be indicative of a defect in the amplifier or a rise in the temperature of the amplifier. Accordingly, the power management systems 809_l to 809_N can be configured to compare individual amplifier current values to target amplifier current values to identify an amplifier state error. In response to determining that the amplifier current value of a particular amplifier has deviated from a target amplifier current value (e.g., first, second or third threshold values discussed above), the power management system controlling that particular amplifier is configured to determine the amount by which values of the voltages/current provided to the amplifier should be offset to achieve efficient operation of the amplifier and provide that offset value. In various implementations, one or more of tasks of correlating the sensed current values to a physical characteristic of the amplifier or determining the amount by which values of the voltages/current provided to the amplifier should be offset by to achieve efficient operation of the amplifier can be performed by the computer 102 instead of the power management systems 809_l to 809_N.

[00237] The target amplifier current values may be based upon several factors for optimal system operation. For example, the target amplifier current values may be calibration amplifier current values for specified temperatures. The target amplifier current values may be calibration amplifier current values to compensate for amplifier manufacturing process variations. The target amplifier current values may be calibration amplifier current values to compensate for voltage variations. The target amplifier current values may be calibration amplifier current values to compensate for radio frequency phase variations. The target amplifier current values may be historical performance amplifier current values. The historical performance amplifier current values may be used to identify amplifier degradation over time.

[00238] Without any loss of generality, the plurality of power management systems 809_l to 809_N can comprise a variety of sensors. For example, the plurality of power management systems 809_l to 809_N can comprise voltage sensors configured to measure voltages at the various parts of the amplifiers in the amplifier chains 104_l to 104_N. As another example, the plurality of power management systems 809_l to 809_N can comprise temperature sensors configured to measure temperature of the amplifiers in the amplifier chains 104_l to 104_N. The temperature sensors can be configured to measure the device temperature of the amplifiers in the amplifier chains 104_l to 104_N or temperature of the housing or the mount on which the amplifiers in the amplifier chains 104_l to 104_N are disposed.

[00239] The system 100 can be configured as a phased array comprising a plurality of phased array elements, each phased array element comprising one of the amplifier chains 104_l to 104_N and the corresponding antenna 220_l to 220_N of the antenna array 106. Without any loss of generality, the amplifiers in the amplifier chains 104_l to 104_N can comprise three terminal semiconductor devices, such as, for example, a field effect transistor (FET). The power management systems 809_l to 809_N can advantageously increase or optimize one of more figures of merit (e.g., output power, power efficiency, linearity, etc.) of the amplifiers and accordingly the phased array system is discussed below. As a part of initialization procedure of the phased array system 100, the different amplifiers in the amplifier chains 104_l to 104_N are characterized to correlate the different bias settings (e.g., gate voltage, drain voltage, drain current, gate current) to the gain and/or the power output from the amplifiers at different temperatures. The characterized information is stored in a memory associated with the power management systems 809_l to 809_N. The characterization can be done when the phased array system is built and then subsequently as part of maintenance of the phased array system. For example, after the initial characterization when the phased array system 100 is built, further characterization of the amplifiers can be performed once or twice a year. In some other implementations, the amplifiers can be characterized before a mission. As used herein, a mission refers to the phased array being in a state where it is ready to emit electromagnetic pulsed radiation. The period of a mission can range from a few minutes to a year or a few years. For example, a mission period can be a few minutes, half an hour, an hour, a few hours, a week, a month, a few months, a year, or a few years.

[00240] When the phase array is turned on at the start of the mission, the voltage at the drain terminal of the amplifiers in the amplifier chains 104_l to 104_N is set to a threshold drain bias voltage. In some implementations, the threshold drain bias voltage can correspond to a drain bias voltage that maximizes the power output from the amplifiers. In some implementations, the threshold drain bias voltage can correspond to a drain bias voltage that is required to operate the amplifiers in saturation or close to saturation. In some implementations, the threshold drain bias voltage can correspond to a drain voltage that optimizes the power output from the amplifiers and the drain efficiency. In yet some other implementations, the threshold drain bias voltage can correspond to a drain voltage that is a maximum allowable drain bias voltage that doesn’t cause the amplifier to break down. The bias voltage at the gate terminal of the amplifiers in the amplifier chains W4_f to fO4_N is set to a voltage that is below the turn-on voltage of the amplifier. Upon receiving indication that electromagnetic radiation will be input to the amplifiers in the amplifier chains W4_f to W4_N, the power management systems 809_f to 809_N can apply an offset voltage to gate terminals of the amplifiers in the corresponding amplifier chains f04_f to fO4_N that would raise the voltage at the gate terminal of individual amplifiers in the amplifier chains f04_f to W4_N to a level that would cause a threshold amount of drain current to flow through the amplifier. The threshold amount of drain current can be a drain current that maximizes the output power from the amplifier. The threshold amount of drain current can be a drain current that optimizes power out from the amplifier as well as the power efficiency. The threshold amount of drain current can correspond to a drain current that optimizes output power, linearity and efficiency. The threshold drain current and the gate bias voltage (or offset voltage) which causes the threshold drain current to flow through the amplifier may be different for different amplifiers in the amplifiers chains f04_f to fO4_N. The difference in the threshold drain current and the gate bias voltage (or offset voltage) can be attributed to variation in temperature across the elements of the phased array, variation in voltage across the elements of the phased array, variation in load and/or impedence across the elements of the phased array, or process variations between the different amplifiers. The energy radiated from the phased array system is optimized by optimizing the power out from individual elements of the phased array system by setting the gate voltage (or the offset voltage) of an individual amplifier of the phased array system to a value that causes a threshold amount of drain to flow through the amplifier.

[00241] During the operation of the phased array system, the drain current can be sensed from time to time and the gate bias voltage (or offset voltage) is adjusted/modulated to maintain the drain current at the threshold current level. The drain current can be sensed periodically or intermittently. In some implementations, the drain current can be sensed every at intervals less than 10 microseconds (e.g., less than 1 microsecond, less than 5 microseconds) and the gate bias voltage (or the offset voltage) can be adjusted to maintain the drain current at the threshold amount. In some implementations, the drain current can be continually sensed and the gate bias voltage (or the offset voltage) can be continuously adjusted to maintain the drain current at the threshold level. In some implementations, the gate bias voltage and the drain bias voltage can be modulated together to maintain the drain current at the threshold amount.

[00242] In various implementations, the gate bias voltage and the drain bias voltage can be modulated based on other sensed parameters, such as, for example, temperature, input signal power, output signal power, a measure of linearity of the output signal, or Voltage Standing Wave Ratio (VSWR) characteristics in addition to or instead of the sensed drain current.

[00243] Figure 8B illustrates an implementation of the power management system 809_l. The power management system 809_l can include various functional subsystems, such as an electronic processing system 811, a control system 815, a memory (not shown), a sensing system 821, a power adapting system 823, and an input/output system 819. The various functional sub-systems can be integrated in a single housing or in separate housings. In implementations where the different functional sub-systems are integrated in separate housings, the separate housings can include processing electronics and communication systems to communicate and function properly. For example, in some implementations, the power adapting system 823 and the sensing system 821 can be integrated in a separate housing. In such implementations, the electronic processing system 811 in cooperation with the control system 815 and the memory can provide signals to the power adapting system 823 to turnon/tum-off the biasing voltages and currents to the amplifiers in response to receiving a signal from the RF generator 103 indicating the start/end of the RF signal and/or receiving information from the sensors that one or more sensed parameters are out of a range of values.

[00244] The power management system 809_l can be implemented with a form factor of a field programmable gate array (FPGA) or an application specific integrated circuit (ASIC). The ASIC implementation may be advantageous to realize smaller form factors, such as, for example, a chip having a size of a 10 mm x 10 mm, 5 mm x 5 mm or 3 mm x 3 mm. The power management system 809_l is configured to obtain information about the signals to be amplified and monitor various currents and voltages of the amplifier to optimize and control operating currents and voltages of the amplifier. The power management system 809_l can obtain the information about the signals to be amplified and the currents/voltages at various terminals of the amplifier in real time or substantially in real time. For example, the power management system 809_l can obtain the information about the signals to be amplified and the currents/voltages at various terminals of the amplifier in a time interval less than about 1 second, in a time interval greater than or equal to about 1 millisecond and less than about 1 second, in a time interval greater than or equal to about 1 second and less than about 10 seconds, in a time interval greater than or equal to about 10 seconds and less than about 30 seconds, in a time interval greater than or equal to about 30 seconds and less than about 1 minute and/or in a range defined by any of these values.

[00245] The power management system 809_l can provide several benefits including but not limited to increasing/optimizing power efficiency for a desired performance criterion. For example, consider that an amplifier in the amplifier chain 104_l being controlled by the power management system 809_l is operated in a high gain regime to provide a certain amount of RF output power. The power efficiency of that amplifier can be higher than a similar amplifier that is operated in a high gain regime to provide the same amount of RF output power but is not controlled by the power management system 809_l. As another example, consider that an amplifier in the amplifier chain 104_l controlled by the power management system 809_l is operated to provide a certain amount of gain and linearity. The power efficiency of that amplifier can be higher than a similar amplifier that is operated to provide the same amount of gain and linearity but is not controlled by the power management system 809_l. The use of the power management system 809_l can also reduce direct current (DC) power consumption during operation of an amplifier as compared to direct current (DC) power consumption by an amplifier driven without a power management system 809_l. The power management system 809_l can improve linearity of an amplifier, help in automatic calibration of an amplifier over temperature, voltage and process variations, and/or autocalibration of a phased array system.

[00246] The electronic processing system 811 can comprise a hardware processor that is configured to execute instructions stored in the memory which will cause the power management system 809_l to perform a variety of functions including, but not limited to, turning on/off or reduce voltages/currents provided to various terminals of an amplifier in response to detecting that the signal to be amplified is turned on/off or sensing individual amplifier current values and change the values of different voltages and currents in response to the deviations of the sensed current values from target values.

[00247] The input/output system 819 can be configured to provide wired/wireless connection with external devices and systems. For example, the input/output system 819 can comprise an Ethernet port (e.g., a Gigabit Ethernet (GbE) connector) that provides connection to the computer 102 and/or a router, one or more connectors that provide connection to the RF signal generator 103, a connector that provides connection with an external power supply, a plurality of connectors that provide voltages/currents to one or more amplifiers, a plurality of connectors that can receive voltage/current information from the one or more amplifiers, and connectors that provide connection with a user interface (e.g., a display device). In various implementations, the input/output system 819 can comprise a command and control link to receive messages from the RF generator 103 and/or computer 102.

[00248] The input/output system 819 can be configured to receive as input, a signal/trigger/information from the RF signal generator 103 and use the information from this input to determine the voltages and current for an amplifier in the amplifier chain 104_l. As discussed above, the input received from the RF signal generator can be a trigger that conveys information that the RF signal will be turning on in a short while and causes the power management system 809_l to start the power sequencing process and provide appropriate voltages and/or currents to bias the amplifiers in the corresponding amplifier chain 104_l prior to the arrival of the RF signal. For example, the input from the RF signal generator can be a pulse enable signal which is high when the RF signal is on and low when the RF signal is off. In various implementations, the input from the RF signal generator 103 can be representative of the waveform being output by the DAC 214_1 of the RF generator 103. In some implementations, the input can include instructions and/or settings to power on the power management system 809_l, to power up an amplifier in the amplifier chain 104_l, and other data to operate the power management system 809_l and an amplifier in the amplifier chain 104_l.

[00249] The input/output system 819 can comprise a communication system configured to communicate with external devices and systems. For example, the input/output system 819 can comprise Ethernet connectivity to send information including but not limited to amplifier health information, and efficiency statistics to the computer 102. Ethernet connectivity can also help in synchronizing an array of many power management systems in phased array applications. The input/output system 819 comprises a plurality of connectors that are configured to provide voltages/currents to at least one terminal of an amplifier in the amplifier chain 104_l. For example, the voltages and currents required to bias at least one of the gate, source and/or drain terminal of an amplifier in the amplifier chain 104_l can be provided through the output ports of the power management system 809_l. The power management system 809_l can be configured to provide bias voltage and/or current to a plurality of amplifiers. For example, the power management system 809_l can be configured to provide bias voltage and/or current to two, four, six or more amplifiers.

[00250] The sensing system 821 can be configured to sense current values at one or more terminals of the amplifier as discussed above. In various implementations, the sensing system 821 comprises at least one current sensor and an analog to digital converter (ADC) configured to sample and average the output of the current sensor (e.g., sensor 415) to obtain a sensed current value. In another implementation of the sensing system 821, the voltage drop across a resistor (e.g., a shunt resistor) connected to the drain terminal is measured. The drain current is obtained from the measured voltage drop and the value of the resistor. In such an implementation, the sensing circuit is designed to have low offset voltage and low noise which allows for greater accuracy in the measurement of the drain current. In various implementations, the current sensor need not be integrated with the other components of the sensing system 821 and/or the other sub-systems of the power management system 809_l. Instead, the current sensor can be integrated with the amplifier. The number of current sensors can vary based on the number of amplifiers being controlled by the power management system 809_l and the number of currents that are being monitored. For example, if the power management system 809_l is configured to control four distinct amplifiers and it is desired to monitor the drain current of each of the four separate amplifiers, then the power management system 809_l comprises four current sensors configured to monitor the drain current of each of the four distinct amplifiers.

[00251] The power adapting system 823 can be configured to convert power from an external power supply 825 (e.g., an AC power line, a battery source, a generator, etc.) to voltage and current waveforms required for operating the amplifiers being controlled by the power management system 809_l. For example, in various implementations, the power adapting system 823 is configured to convert a 60V DC bus and generate appropriate voltage and current inputs for the various terminals of the amplifier. In some implementations, the power adapting system 823 may be configured to convert an incoming AC power line to DC power (e.g., DC voltages between about +20 Volts DC and about +80 Volts DC). The power adapting system 823 is configured to step up/down the converted DC voltage to appropriate voltages for the amplifier (e.g., in a voltage range between about +45 Volts and +70 Volts high voltage Gallium Nitride power amplifiers) through DC/DC converters. The stepped up/down voltages are provided to the various terminals of the amplifier (e.g., gate, drain, and/or source) in a sequence as discussed above in response to receiving a signal from the RF signal generator 103 and/or the computer 102 that the signal to be amplified is turned on/being turned on.

[00252] In various implementations, the power management system 809_l comprises a “power gating” feature where the bias voltage/current at various terminals (e.g., gate, source, and/or drain) of the amplifier is adjusted in response to a sensed characteristic of the system. The sensed characteristics can comprise one or more of drain current, source current, gate current, gate voltage, drain voltage, voltage at different nodes of the amplifer system, current at different nodes of the amplifier system. In various implementations, in addition to or instead of modulating the gate and/or the drain bias voltage, voltages or currents at other nodes can be modulated to optimize the performance of the amplifier. The other nodes can comprise the source terminal, the back bias, the RF input circuits, RF output circuits, etc. In various implementations, the power management system 809_l can provide offset voltages that raise and lower the biasing voltage to turn on/turn off the power amplifier in response to the turning on and turning off the RF signal. For example, in an implementation of the amplifier chain 104_l comprising a GaN power amplifier, the power management system 809_l can toggle the gate voltage between about -5V (pinch off or turn off) and about -2.5V (saturation or turn on) at a frequency greater than or equal to 1 kHz and less than or equal to about 500 MHz. As another example, the gate voltage can be toggled between pinch off and saturation at a rate greater than or equal to about 10 MHz and less than or equal to about 100 MHz. Without any loss of generality, the power management system 809_l can be configured to turn-on and turn-off the amplifier in between pulses of a pulsed waveform. This can advantageously allow heat to dissipate from the amplifier in between pulses thereby reducing the rate at which the amplifier heats up and increase lifetime. Turning on and off the amplifier in between pulses of a pulsed waveform can also advantageously increase the power efficiency of the amplifier.

[00253] The control system 815 can be configured to control and/or manage various functions and processes of the power management system 809_l. For example, the control system 815 independently or in co-operation with the computer 102 and/or the RF generator 103 can control the order in which the voltage and current levels at various terminals of the amplifier are changed to power up/down the amplifier. As another example, the control system 815 independently or in co-operation with the computer 102 and/or the RF generator 103 can control the raising and lowering of the voltage/current levels at the gate terminal of the amplifier synchronously with the incoming signal to be amplified. As yet another example, the control system 815 independently or in co-operation with the computer 102 and/or the RF generator 103 can control the timing of turning on the various amplifiers in the amplifier chains 104_l to 104_N.

[00254] As discussed above, the power management system 809_l can be configured to use the information about the signal to be amplified to adjust/tune bias voltages and currents that power up/down one or more amplifiers in the amplifier chain 104_l to improve various figures of merit (e.g., power efficiency, linearity, etc.). Figure 8C is a schematic illustration of an amplifier 828 in the amplifier chain 104_l that is being controlled by the power management system 809_l. The amplifier 828 is a FET amplifier having a gate terminal 830 and a drain terminal 832. As discussed above, the power management system 809_l is configured to provide voltage/current to the gate terminal 830 and the drain terminal 832 of the amplifier as well as adjust the voltage/current levels at the gate terminal 830 and the drain terminal 832 based on information regarding the incoming signal and/or information regarding the temperature and other physical characteristics of the amplifier 828.

[00255] The signal to be amplified can be input to the gate terminal 830 via an input matching circuit 834. The amplified signal can be output from the drain terminal 832 via an output matching circuit 836. To ease the burden on the power adapting system 823, one or more storage capacitors 838 are placed near the drain terminal 832 of the amplifier 828. The illustrated implementation comprises a single storage capacitor 838. The storage capacitors can have a capacitance value between about 700 microfarads and 2000 microfarads. The presence of the storage capacitors 838 are advantageous in high power applications and/or applications in which the signal has a high duty cycle. In implementations comprising a plurality of capacitors, the plurality of capacitors can be arranged in parallel. As discussed above, the power management system 809_l comprises a plurality of current sensors 840 and 842 that are configured to sense/monitor drain and gate current respectively. The current sensor 840 configured to monitor/sense drain current can be positioned downstream of the storage capacitor 838 as shown in the illustrated embodiment or upstream of the storage capacitor 838 in other embodiments. As discussed above, the power management system 809_l can also comprise a temperature sensor 844 configured to sense/monitor the ambient temperature in the vicinity of the amplifier 828. For example, the temperature sensor 844 can be configured to measure the temperature of the circuit board on which the amplifier 828 is mounted.

[00256] In various implementations, the power management system 809_l can be configured to protect the amplifiers from damage. The power management system 809_l can be configured to monitor voltages and/or currents at various terminals of the amplifier and turn-off the amplifier if the current and/or voltage at one or more terminals of the amplifier exceeds a certain limit. For example, the power management system 809_l can be configured to turn off an amplifier in the amplifier chain 104_l if the drain current of that amplifier exceeds a preset threshold. The threshold drain current for the various amplifiers controlled by the power management system 809_l can be programmed and stored in a memory accessible by the power management system 809_l. The threshold drain current can be different when the

RF signal is on and off. As another example, the power management system 809_l is configured to turn-off the amplifier if the rate of increase of the drain current of an amplifier during power up sequence is below a threshold rate. The threshold rate of increase of the drain current for the various amplifiers controlled by the power management system 809_l can be programmed and stored in a memory accessible by the power management system 809_l. In various implementations, the power management system 809_l can be configured to monitor the duration of time an amplifier is on and turn off the amplifier if an amplifier is on for an amount time greater than a preset amount of time even if the RF signal is on. The preset amount of time can be programmed and stored in a memory accessible by the power management system 809_l. In various implementations, an input switch can be provided in the input signal path of the amplifier. In such implementations, the power management system 809_l can be configured to open the input switch and disconnect the RF signal from the input to the amplifier if the voltage, current and/or duration of time the amplifier is on exceeds a limit. In various implementations, a load switch can be provided in the drain path of the amplifier. In such implementations, the load switch can be opened to disconnect the drain and prevent damage to the amplifier if the drain current exceeds a limit.

[00257] The bias voltage/current of an amplifier (e.g., a GaN power amplifier) that optimizes the power efficiency of amplifier can vary based on the device temperature. Thus, the power efficiency of an amplifier can degrade from an optimum power efficiency as the temperature of the amplifier changes. Without relying on any particular theory, the temperature of the amplifier can increase over the duration of time that the amplifier is in use. Thus, it is advantageous to intermittently obtain a measurement/estimate of the temperature of the amplifier during use and adjust the bias voltage/current to optimize power efficiency and/or other figures of merit of the amplifier. The bias voltage/current that optimizes power efficiency can also be affected due to degradation in the device performance due to defects during manufacturing, aging or a defect in the circuitry surrounding the amplifier.

[00258] While, the temperature sensor 844 in Figure 8C may provide information regarding the ambient temperature around the amplifier 828. In many implementations, it may not be practical to use a temperature sensor to obtain an estimate of the device temperature of the amplifier 828. However, the drain current can be correlated to the device temperature of the amplifier 828 and can be used to measure the device temperature of the amplifier 828. Figure 9 illustrates the correlation between the drain current and the device temperature for an implementation of a FET amplifier. In Figure 9, the embodiment of the FET amplifier is biased at a gate voltage of -2.763V and the drain current changes from about a few milliamps to about 225 milliamps as the temperature of the embodiment of the FET amplifier rises from about -40 degrees Celsius to about 100 degrees Celsius. The variation of the drain current versus temperature can be different when the biasing gate voltage is changed.

[00259] The drain current can also provide an indication of a degradation in the performance of the amplifier 828 as a result of defects due to manufacturing/aging or a defect in the circuitry surrounding the amplifier. Thus, adjusting the biasing voltages/currents based on measuring the drain current can advantageously aid in optimizing power efficiency and other figures of merit of the amplifier 828. The drain current can be obtained under bias condition when the signal to be amplified is absent, when the signal to be amplified is present and/or in between signal pulses. For example, in some implementations, the sensor 840 can be configured to sense the drain current continuously or almost continuously. As discussed above, analog-to-digital converters in the power management system 809_l sample the sensed current. A measurement of the drain current is obtained by averaging over a plurality of samples of the sensed current. The electronic processing system 811 can be configured to correlate the measured drain current to the device temperature of the amplifier 828. The electronic processing system 811 can be configured to correlate the measured drain current to the device temperature of the amplifier 828 using algorithms and/or look-up-tables (LUTs).

[00260] As the device temperature of the amplifier 828 changes the drain current also changes as discussed with reference to Figure 9. To achieve the desired output power level, efficiency and other metrics, the electronic processing system 811 of the power management system 809_l is configured to adjust the gate bias voltage of the amplifier as the temperature changes to maintain the threshold amount of drain current through the amplifier. The electronic processing system 811 can be configured to obtain the amount by which the gate voltage should be changed (also referred to herein as gate offset voltage) using algorithms and/or look-uptables (LUTs). The gate offset voltage can be in a range between about 1 mV and about 500 mV. In various implementations, the signal to be amplified is turned off before changing the gate voltage by the offset amount. In some implementations wherein the signal to be amplified comprises pulses, the gate voltage is changed by the offset amount in the time interval between pulses. In some implementations, the gate voltage is changed by the offset amount when the signal to be amplified is on.

[00261] In addition to optimizing power efficiency based on device temperature and/or achieving a desired power efficiency at different temperatures, the power management system 809_l can also help in preventing a rapid increase in the device temperature by adjusting the gate bias voltage as the drain current changes to maintain an optimal gain and/or power efficiency. This is discussed in further detail with reference to Figure 10. An implementation of an amplifier controlled by the power management system 809_l is operated in two modes. In both the operating modes, the bias voltage to the gate terminal of the amplifier is turned on a short time before a RF signal is input to the amplifier and turned off a short time after the RF signal is turned off. For example, the gate bias voltage can be turned on/off at a duty cycle of 1%. However, in the first operating mode the gate bias voltage is maintained at a constant voltage, while in the second operating condition the gate bias voltage is changed to maintain the drain current at the threshold amount. The effect of changing the gate bias voltage to maintain the threshold amount of drain current not only increases/maximizes the gain provided by the amplifier over time but also prevents a rapid increase in the temperature of the amplifier over time. This is illustrated in Figure 10 which shows a curve 1002 exhibiting a rapid rise in the temperature of an amplifier over time when operated in the first operating mode and a curve 1004 exhibiting a gradual rise in the device temperature of an amplifier over time when operated in the second operating mode. As noted from curve 1002, the temperature of the amplifier can increase from about 22 degrees Celsius to about 48 degrees Celsius in less than 500 seconds when the amplifier is operated in the first operating mode. In contrast, the temperature of the amplifier increases gradually from about 22 degrees Celsius to about 32 degrees Celsius in about 3000 seconds when the amplifier is operated in the second operating mode. Accordingly, systems including amplifiers controlled by a power management system 809_l that is configured to turn on/off the amplifier based on the presence/absence of the signal to be amplified as well as adjust the gate bias voltage based on the monitored drain current can operate efficiently and/or provide nearly constant gain at a wide range of temperatures (e.g., between about -20 degrees Celsius and about 90 degrees Celsius). In various implementations, by adjusting the gate bias voltage based on monitored drain current can maintain substantially constant power efficiency across a range of temperatures between about -20 degrees Celsius and about 90 degrees Celsius. For example, by adjusting the gate bias voltage based on monitored drain current the power efficiency can be maintained to be within ± 10% of a desired value for temperatures between -20 degrees Celsius and about 90 degrees Celsius. The desired power efficiency value can be in a range between 40% and 75%. Such systems can also operate without the need for large and/or expensive cooling systems. In fact, many systems including amplifiers controlled by a power management system 809_l that is configured to turn on/off the amplifier based on the presence/absence of the signal to be amplified as well as adjust the gate bias voltage based on the monitored drain current can function without any cooling systems, such as for example, electrical or electro-mechanical cooling systems.

[00262] Another advantage of synchronizing the turning on/off the bias voltage to the gate terminal with the turning on/off the input signal is an increase in power efficiency. As discussed above, a storage capacitor 838 may be provided near the drain terminal of the amplifier 828 in various implementations. Depending on the pulse width and duty cycle requirements, the storage capacitor 838 can have a large capacitance value (e.g., between 700 pF and 2000 pF). If the drain current is turned on/off synchronously with the input signal, a large amount of energy is required to charge the storage capacitor 838 as shown in Figure 11A. In contrast, the capacitors near the gate terminal have lower capacitance values and the energy required to charge those capacitors can be between 10-20 times lower than the energy required to charge the storage capacitor 838 as shown in Figure 11B. Accordingly turning on/off the gate bias voltage (referred to herein as gate switching) instead of modulating the drain current/voltage (referred to herein as drain switching) can advantageously increase power efficiency of the amplifier.

[00263] Figure 12 illustrates a flow chart of operations performed by the power management system 809_l. The drain and/or gate current from the amplifier can be monitored as shown in block 1204. As discussed above, the drain and/or gate current can be monitored using the sensing system 821. The drain and/or gate current can be sensed continuously or intermittently (e.g., periodically). As discussed above, the sensed current can be sampled and averaged to obtain a measurement of the current. The obtained current measurement can be correlated to a temperature as discussed above. In various implementations, a range for the drain and/or gate current defined by an upper current threshold value and a lower current threshold value can be provided for various gate bias voltages. For a given gate bias voltage, the power efficiency of the amplifier is optimized if the drain and/or gate current is within the provided current range. Accordingly, if the measured current is different from a threshold value (upper current threshold or lower current threshold) as shown in block 1206, then the gate bias voltage can be changed as shown in block 1208. The power management system 809_l can change the gate bias voltage when the incoming signal is turned off or in-between pulses of the incoming signal. Otherwise, the operation can continue as shown in block 1210.

[00264] Figure 13 illustrates a process implemented by the smart slave circuit 309. A reset command is received to commence an initialization operation 1300. The digitalto-analog converter is initialized 1302. That is, the voltage range of DAC 413 is set to appropriate output values for an amplifier being controlled, such as +/-5 V.

[00265] Once the DAC voltage is set, an idle state is entered 1304. The idle state is maintained until a tune command is received. A tune command invokes a DAC prepare state 1306, where the voltage is set to a specified level, such as -5V. A sensor calibration state 1308 is then entered. In one embodiment, the sensor is calibrated for a 0 amp voltage offset. The offset is subtracted from all incoming samples at the analog-to-digital converter interface that can receive the current sense signal from current sensor 415. If the offset is less than a threshold, an error state 1312 is entered. Otherwise, a tune state 1310 is entered. In this state, a new bias voltage (Vg) is used to direct the current sense signal to the desired value. If the DAC is maxed out, the error state 1312 is entered. Otherwise, a completion state 1314 is entered to determine whether processing should return to state 1306 to try to obtain an improved current sense signal.

[00266] The operations of Figure 13 may be substituted with other approaches to establish an optimal current range. For example, the current range can be experimentally tested ahead of time and manually programmed or hard coded into the system. The system can also use machine learning or artificial intelligence techniques to find the optimal current. In other embodiments, other signals are fed back into the tuning algorithm instead of just the current. Other signals include the RF output signal 420. A coupler (e.g., 313 in Figure 3) can be used to determine the RF output level. For example, a bias voltage may be applied, a test RF signal is sent, which is read through the coupler into the RF signal generator 103. This procedure is repeated until an optimal saturated RF power output value is obtained. Different optimization criteria are available, such as optimize for power out, such as to achieve 3 dB into power amplifier saturation. Another criterion is to optimize for linearity, such that the RF power is in the linear range. In one embodiment, a pre-programmed voltage bias is used and then 10 mV adjustments above and below the pre-programmed voltage are used until the optimal voltage is achieved.

[00267] The RF output power can be tracked by coupler 313. This information is relayed to the power management system 809_l. As the RF power out for a given bias voltage or current for a given bias voltage starts to drop, the power management system 809_l recognizes that the amplifier is degrading. The amount of degradation is mapped to the lifetime of the amplifier. Reports on amplifier state are periodically issued by the power management system 809_l.

[00268] The power management system 809_l can include instructions executed by electronic processing system 811 to render to display device the state of the various amplifiers being controlled by the power management system 809_l. Figure 14 illustrates the display of a display device showing the health of a system comprising, for instance, 144 amplifiers arranged in twelve columns and twelve rows. Each amplifier is represented by a circle 1402. A printed circuit board or power supply board is associated with each column, as represented by a square 1404. Indicia is provided to characterize the operational state of each element. For example, a down arrow or color red may represent a failed state. Side arrows or amber color may represent a state transition. An up arrow or color green may represent a healthy state. Absent indicia may represent an off state.

[00269] Various embodiments described herein maintain amplifier health in a number of ways. For example, as discussed above, the power management system 809_l may enforce a limit on the bias voltage, drain current, duration of time the amplifier is turned on. Additionally, the measured characteristics (e.g., drain current/voltage, gate current/voltage, etc.) of the amplifier received by the power management system 809_l can be analyzed to identify changes/degradation in the performance of the amplifier. Pre-emptive maintenance/repairs can be performed on the amplifier and the driving circuitry on the basis of the identified changes/degradation in the performance.

Dynamic Gate Biasing of RF Amplifier

[00270] Various applications comprising RF amplifiers may require optimizing/maximizing multiple figures of merit. The multiple figures of merit can include reliability, power efficiency, output power, linearity, bandwidth, signal-to-noise ratio, and temperature. Depending on the application, one or more of these figures of merit can be maximized or a pareto optimization of these figures of merit can be achieved. Pareto optimization refers to a situation in which no individual figure of merit can be improved without degrading at least one other figure of merit. The bias voltage provided to the amplifier can affect linearity, power efficiency and output power of the amplifier. The input signal power can affect the spurious-free dynamic range (SFDR) and linearity of the amplifier. Accordingly, various implementations of the power management system 809_l described above can be configured to adjust the biasing power of the amplifier to optimize multiple figures of merit based on a user specification or a desired application. In various implementations, the power management system 809_l can be configured to provide feedback to the RF signal generator 103 and/or the computer 102 that can be used to change/alter the characteristics of the input signal (e.g., input power, carrier frequency, waveform type, modulation, pulse width, duty cycle, etc.) to maximize/pareto optimize one or more figures of merit.

[00271] In various implementations, the power management system 809_l in cooperation with the computer 102 and/or the RF signal generator 103 can be configured to adjust the bias voltages/currents provided to the amplifiers in the amplifier chain 104_l and/or the power of the RF signal input to the amplifier to optimize linearity, output power and/or signal-to-noise ration of the RF signal output from the amplifiers in the amplifier chain 104_l. The optimization methods and systems can be implemented for RF signals over a broad range of frequencies and waveform characteristics as well as over a wide range of temperature of the amplifier. Additionally, the power management system 809_l in cooperation with the computer 102 and/or the RF signal generator 103 can be configured to adjust the bias voltages/currents provided to the amplifiers in the amplifier chain 104_l and/or the power of the RF signal input to the amplifier to reduce damage and/or to prevent failure of one or more amplifiers in the amplifier chain 104_l. Further, the power management system 809_l in cooperation with the computer 102 and/or the RF signal generator 103 can be configured to adjust the gain bias voltage provided to the gate terminal of the amplifier in the amplifier chain 104_l to optimize power efficiency and/or power of the RF signal output from the amplifiers in the amplifier chain 104_l for different temperatures. Machine learning (ML) techniques/algorithms can be used to determine the bias voltages/currents, and/or the power levels and waveform characteristics of the input signal that would optimize output power and/or power efficiency over a range of frequencies and/or temperatures.

[00272] As discussed in further detail below, the power management system 809_l in cooperation with the computer 102 and/or the RF signal generator 103 can be configured to dynamically adjust the bias voltages/currents and/or characteristics of the input RF signal (e.g., frequency, pulse width, duty cycle, power level, etc.) to maximize/optimize linearity of the amplifier. The power management system 809_l in cooperation with the computer 102 and/or the RF signal generator 103 can be configured to dynamically adjust the bias voltages/currents and/or characteristics of the input RF signal (e.g., frequency, pulse width, duty cycle, power level, etc.) to maximize/optimize power efficiency of the amplifier. Machine learning (ML) techniques/algorithms can be used to determine the bias voltages/currents and/or characteristics of the input RF signal that would optimize linearity and/or power efficiency.

[00273] Figure 15 schematically illustrates an implementation of a power management system 1501 that is configured to dynamically adjust the bias power provided to an implementation of an amplifier 1511. The amplifier 1511 can be a FET amplifier (e.g., a HEMT transistor). The power management system 1501 can be similar to the power management system 809_l discussed above. Accordingly, the power management system 1501 can share all or many of the architectural/functional/operational characteristics of the power management system 809_l discussed above. The power management system 1501 comprises a control system 1503, an electronic processing system 1505 configured to execute machine learning algorithms, a drain bias voltage/current sensor and modulator module 1507, and a gate bias voltage/current sensor and modulator module 1509. In various implementations, the drain bias voltage/current sensor and modulator module 1507 and the gate bias voltage/current sensor and modulator module 1509 can be combined in a single module. In some implementations, the drain bias voltage/current sensor can be separate from the drain bias current/voltage modulator. Similarly, the gate bias voltage/current sensor can be separate from the gate bias current/voltage modulator in some implementations. The power management system 1501 can comprise other sensors (e.g., temperature sensor) as discussed above with reference to Figures 8A-8C. In various implementations, the power management system 1501 can be configured to interface with a power distributing unit that is configured to convert power from a power source (e.g., AC power line, battery, generator, etc.) to voltages/currents required to bias the amplifier 1511. In various implementations, the power management system 1501 can be configured to control the power distributing unit, as discussed above. The power distributing unit can be similar to the power adapting system 823 and/or the power distributor 108. In various implementations, the power management system 1501 can be configured to communicate with components in the input signal path (e.g., RF signal generator 103, amplifiers or other electrical components) to the amplifier 1511 through a master controller (e.g., computer 102) and provide information that can be used to control characteristics of the input signal (e.g., frequency, waveform characteristics, input power level, pulse width, duty cycle, etc.). In various implementations, the power management system 1501 can be configured to directly communicate with and/or control components in the input signal path to vary characteristics of the input signal (e.g., frequency, waveform characteristics, input power level, pulse width, duty cycle, etc.).

[00274] The drain bias voltage/current sensor and modulator module 1507 is configured to (i) sense the drain current and voltage; and (ii) adjust the drain bias voltage and/or current of the amplifier 1511. The gate bias voltage/current sensor and modulator module 1509 is configured to (i) sense the gate current and voltage; and (ii) adjust the gate bias voltage and/or current of the amplifier. Adjusting the gate bias voltage/current and/or the drain bias voltage/current can change output power, gain provided by the amplifier, efficiency, thermal performance and/or linearity of the amplifier 1511. Without subscribing to any particular theory, linearity of the amplifier can be characterized by an amount of 3rd order intermodulation distortion (IMD3) and/or 5th order intermodulation distortion (IMD5). As discussed above, the drain current can be used to determine the temperature of the amplifier 1511 and/or the health of the amplifier 1511. Accordingly, the power management system 1501 can be used to check the health of the amplifier 1511 and preventive maintenance can be performed on the amplifier by changing the gate bias voltage and/or drain bias voltage in case there’s a degradation in the health of the amplifier. In some implementations, the power management system 1501 can be configured to provide warnings regarding the health of the amplifier which can be used to replace systems/devices with failing amplifiers.

[00275] Various implementations of the power management system 1501 can be configured to store the values of the sensed current and voltage at the gate and drain terminals and temperature in corresponding registers from where they can be read through digital interface. In various implementations, the current, voltage and temperature values stored in the registers can be obtained by averaging over multiple current, voltage and temperature values.

[00276] As discussed above, the power management system 1501 can be configured to dynamically adjust (or modulate) the bias voltage/current provided to the gate and the drain terminals of the amplifier 1511 based on sensed voltages/currents at various terminals of the amplifier and/or characteristics of the input signal or output signal to maximize/pareto optimize one or more figures of merit including but not limited to linearity, power efficiency, and output power. Without relying on any particular theory, the output power of the amplifier 1511 will reach a maximum value at a certain value of gate bias voltage, drain bias voltage and input power level. Any further increase in the input power level, the gate bias voltage or the drain bias voltage/current will not increase the output power beyond the maximum value. This operating state is referred to as saturation. The efficiency of the amplifier 1511 is also maximum when the amplifier 1511 is operated close to saturation. However, the linearity of the amplifier may decrease when the amplifier is operated close to saturation. This is depicted in Figure 16 which shows the variation in the amount of two-tone 3rd order intermodulation distortion (IMD3) as a function of drain efficiency for an implementation of the amplifier 1511. Without any loss of generality, the increase in efficiency is obtained by increasing the bias voltage at the gate terminal and/or the bias voltage at the drain terminal of the amplifier 1511.

[00277] In Figure 16, curve 1601 shows the variation in the amount of two-tone 3rd order intermodulation distortion (IMD3) as a function of drain efficiency for a first input power level and a first bias voltage level provided to the gate terminal which results in an output power of 50dBm. In Figure 16, curve 1603 shows the variation in the amount of two-tone 3rd order intermodulation distortion (IMD3) as a function of drain efficiency for a second input power level and a second bias voltage level provided to the gate terminal which results in an output power of 55dBm. In Figure 16, curve 1605 shows the variation in the amount of twotone 3rd order intermodulation distortion (IMD3) as a function of drain efficiency for a third input power level and a third bias voltage level provided to the gate terminal which results in an output power of 60dBm. The second bias voltage level is greater than the first bias voltage level and the third bias voltage level is greater than the second bias voltage level. At the third bias voltage level, the implementation of the amplifier 1511 is operated close to saturation. It is noted from Figure 16 that when operated close to saturation, the efficiency of the impfementation of the ampfifier 1511 is greater than the efficiency when operated at the first or second bias voitage fevei. However, at the third bias voitage fevef the amount of two-tone 3rd order intermodufation distortion (IMD3) is afso greater than the amount of two-tone 3rd order intermodufation distortion (IMD3) when operated in the first or second bias voitage fevef. A higher amount of two-tone 3rd order intermodufation distortion (IMD3) corresponds to an increase in non-finearity. Accordingfy, by adjusting the bias voitage fevef at the gate terminaf and/or the power fevef of the input signai, the finearity of the ampfifier can be improved. Without any foss of generafity, adjusting the bias voitage provided to the drain terminaf and/or the power fevef of the input signai can afso affect finearity of the ampfifier.

[00278] It is further noted from Figure 16, that for a given output power lower than the saturated output power, a small sacrifice in the efficiency can provide a marke.d reduction in the amount of two-tone 3rd order intermodulation distortion (IMD3). For example, with reference to curve 1603, the amount of two-tone 3rd order intermodulation distortion (IMD3) decreases from about -30dBc at an efficiency of about 0.35 to -42dBc at an efficiency of about 0.34. Thus, efficiency and linearity can be optimized by adjusting the bias voltage/current levels at the gate and/or drain terminals of the amplifier. In the illustrated implementation the input power level and the bias voltage/current levels can be adjusted to operate the amplifier 1511 near the dip in the curve 1603 designated by point A to pareto optimize efficiency and linearity.

[00279] Based on a specification from a user or requirements of an application, the power management system 1501 can be configured to modulate the bias voltage/current levels at the gate and/or drain terminals to change the amount of power output from the amplifier 1511, the degree of linearity (as indicated by the amount of IMD3) and the efficiency of the amplifier 1511. This is further explained with reference to Figure 16. The power management system 1501 can be configured to set the bias voltage/current level at the gate and/or drain terminals to a first setting such that the output power of the amplifier 1511 is below the maximum output power. For example, the amplifier 1511 can be configured to operate at/near point A of curve 1603 or at/near point B of curve 1601 when biased at the first setting. In this setting, the amount of IMD3 is close to a minimum resulting in an increase in the linearity of the amplifier 1511. The power management system 1501 can change the bias voltage/current level at the gate and/or drain terminals to a second setting such that the output power of the amplifier 1511, the efficiency and/or the degree of linearity is changed. For example, the amplifier 1511 can be configured to operate at/near point C of curve 1603 or at/near point D of curve 1601. Although the amplifier 1511 is configured to operate in the linear regime when biased at the second setting, the amount of IMD3 is not reduced to the lowest possible value for that output power. The power management system 1501 can be further configured to change the bias voltage/current level at the gate and/or drain terminals to a third setting such that the amplifier is configured to output the maximum possible output power. In this setting, the amplifier is operated at or near saturation, such as for example along the curve 1605. In this setting, the amplifier is configured to operate in the non-linear regime.

[00280] The power management system 1501 can be configured to change the bias current/voltage levels at the gate and/or drain terminals instantaneously or sufficiently instantaneously. For example, the time taken to switch the bias current/voltage levels from the first setting to the second or third setting can be in the range from a few nanoseconds to a few milliseconds. The power management system 1501 can be configured to change the Dbias current/voltage levels to change the operating state of the amplifier 1511 to points along the curve 1601/1603 or to points between curves 1601, 1603 and 1605.

[00281] Referring to Figure 17, curve 1703 is a power transfer curve that illustrates the variation of the output power of the amplifier 1511 with variation of the input power of the amplifier. As noted from Figure 17, the variation of output power to the variation of input power is along the line 1701 or close to the line 1701 when the input power level is less than Pin-1 indicating a linear relationship between the output power and the input power. The amplifier is considered to operate in a linear regime when the input power is below Pin-1. The output power starts to deviate from the line 1701 for input power greater than Pin-1 indicating a non-linear relationship between the output power and the input power. The output power saturates at a level P2 when the input power is greater than Pin-3. Any increase in power beyond Pin-3 will not cause any further increase in the output power. The amplifier is considered to operate in the saturated regime for input power greater than Pin-3. The amplifier is considered to operate in the non-linear regime for input power between Pin-1 and Pin-3. In addition to changing the bias voltage/current level at the gate and/or drain terminal of the amplifier, the power management system 1501 can provide feedback/instructions to change the power of the

RF signal input to the amplifier to change the operating state of the amplifier smoothly along the curve 1703 from linear regime to non-linear regime to saturation regime. For instance, changing the operating state of the amplifier smoothly can involve making continuous transitions along the curve 1703. This feature of the power management system 1501 can be advantageous as discussed below with reference to Figure 18.

[00282] Consider a RF system (e.g., an electromagnetic pulsed radiation system) comprising an amplifier 1511 controlled by the power management system 1501. It maybe desirable to operate the RF system in three different operating modes - a first radar mode, a second EMP mode, and a third communication mode. In the first mode, it may be advantageous to operate the amplifier 1511 in the non-linear regime. In the second mode, it may be advantageous to operate the amplifier 1511 in the saturation regime such that the output power is maximized. In the third mode, it may be advantageous to operate the amplifier 1511 in the linear regime. For such a system, the power management system 1501 can provide instructions/feedback to control the input power level to change the operating state of the amplifier 1511 between first, second and third mode. Additionally, the power management system 1501 can vary the bias voltage/current levels at the gate and drain terminals of the amplifier 1511 to improve linearity of the amplifier 1511, the efficiency of the amplifier 1511 and/or other figures of metric discussed above.

[00283] Figure 18 shows the variation of the power output from the amplifier 1511 with time for the three different operating modes. In Figure 18, the amplifier 1511 is configured to operate in the first mode between times ti and t2, t5 and t6 and t9 and tio. In this mode, the output power from the amplifier 1511 is set to Pi. The output power Pi can have a value between Pimax and Pimin shown in Figure 17. The corresponding input power can have a value between Pin-1 and Pin-2 shown in Figure 17. The amplifier 1511 is configured to operate in the second mode between times t2 and t3, t6 and t7 and t!0 and tn. In this mode, the output power from the amplifier 1511 is set to P2 which is greater than Pi. The corresponding input power can have a value greater than or equal to Pm-1. The amplifier 1511 is configured to operate in the third mode between times t3 and t4, t7 and t8 and tn and t12. In this mode, the output power from the amplifier 1511 is set to P3 which is lesser than Pi. The output power P3 can have a value less than Pimin shown in Figure 17. The corresponding input power can have a value less than Pm-1. As discussed above, the bias voltage/current levels can be adjusted to optimize various figures of merit for each of the first, second and third operating modes. As shown in Figure 18, the time duration in each of the three operating modes as well as the duration of inactive time can be variable. The bias settings and/or input power level can be changed instantaneously or sufficiently instantaneously (e.g., in a range from about 1 nanosecond to about 1 millisecond) between the different operating modes.

[00284] The amplifier 1511 can be calibrated to determine the input power level and the bias voltage/current levels corresponding to the first, second and third operating modes. The determined bias voltage/current levels can be stored in a memory accessible to the power management system 1501. The power management system 1501 can be configured to change the operating mode of the amplifier 1511 based on an input received from a user or a controller. In various implementations, the power management system 1501 can be configured to turn off the amplifier 1511 during periods of inactivity between times t4 and t5, and t8 and t9, as discussed above to improve thermal management. In addition to changing the bias current/voltage levels to change the operating mode of the amplifier 1511, the power management system 1501 can be configured to modulate the bias voltage to the gate terminal in response to one or more sensed characteristic of the amplifier, such as, for example drain current to improve efficiency or thermaf performance of the ampfifier 1511.

[00285] Further to hefping in improving thermaf performance of the ampfifier, adjusting the gain bias voftage can afso change the cfass of the ampfifier 1511. For exampie, changing the gate bias voftage can change the conduction angfe which denotes the cfass of the ampfifier. As the gate bias voftage increases, the conduction angfe decreases from 360 degrees to 0 degrees corresponding to a change in ampfifier cfass. The different cfasses of ampfifier can inciude but not be fimited to cfass A, cfass B, cfass AB, cfass C, cfass D, cfass E, cfass F, cfass G, cfass H, cfass S and cfass T. Accordingfy, the power management system 1501 can be configured to change the ampfifier cfass from one of cfass A, cfass AB, cfass B, cfass C, cfass D, cfass E, cfass F, cfass G, cfass H, cfass S and cfass T to another one of cfass A, cfass AB, cfass B, cfass C, cfass D, cfass E, cfass F, cfass G, cfass H, cfass S and cfass T. Adjusting the bias voftage/current fevef to the drain can optimize the efficiency of the ampfifier 1511 for a particufar cfass of ampfifier.

Adaptive High Power Microwave/Electromagnetic Pulse Systems

[00286] Various impfementations of the computer-controfied system described herein can be configured to generate efectro-magnetic radiation (e.g., one or more efectromagnetic puises (EMPs)) with high energy capabfe of charging efectro-magnetic devices, resetting efectro-magnetic devices, disrupting efectronic circuits and components, disabfing and/or destroying efectronic circuits and components. Recent discovery indicates that the effect of the generated efectro-magnetic radiation on a target efectronic device/circuit/component can vary depending on the frequency, power and/or other waveform parameters (e.g., modulation type, pulse width, pulse repetition rate, duty cycle) of the generated electro-magnetic radiation. The computer-controlled RF signal generating system discussed above can be capable of varying the frequency, power and/or other waveform parameters (e.g., modulation type, pulse width, pulse repetition rate, duty cycle) of the generated RF signal in real-time or substantially in real-time (e.g., in a time interval less than a few seconds or a time interval less than a few milliseconds) to achieve a desired effect on the target electronic device/circuit/component (sometimes referred to as “target”). These and other related aspects are discussed in detail below.

[00287] Figure 19 is a simulation showing the amount of electro-magnetic radiation that is coupled to a circuit comprising different wires with lengths between 1 inch and 6 inches as the frequency of the electro-magnetic radiation is varied between about 0.25 GHz and about 4.0 GHz. In Figure 19, curve 1903 shows the amount of electro-magnetic radiation coupled into a wire having a length of 3 inches as a function of frequency of the electromagnetic radiation. Curves 1904, 1905 and 1906 show the amount of electro-magnetic radiation coupled into wire having lengths of 4 inches, 5 inches and 6 inches respectively as a function of frequency of the electro-magnetic radiation. It is noted from Figure f9 that small deviations in frequency of the electro-magnetic radiation can reduce the amount of electromagnetic energy that is coupled into a wire having a length greater than 3-inches.

[00288] This shows that the effect of high power electro-magnetic radiation on an electronic device can depend on how closely the frequency of the electro-magnetic radiation matches the resonant frequency of one or more electrical wires, components and/or circuits of the electronic device. For example, the effects of a high power electromagnetic (such as, microwave) signal on an electronic device can be 10-100 times more powerful if the center frequency is tuned to the resonant frequency of the one or more electrical wires or traces in the components and/or circuits of the electronic device as compared to the effects achieved by a high power microwave signal having similar power but a frequency different from the resonant frequency of the one or more electrical wires or traces in the components and/or circuits of the electronic device. Thus, matching the center frequency of the generated electro-magnetic radiation to a resonance frequency of an electrical component in the target can reduce the power required to achieve a certain effect considerably. Without any loss of generality, the resonant frequency one or more electrical wires or traces in the components and/or circuits of the electronic device can be correlated to a size of the target. Accordingly, analyzing the target and determining the sizes of various parts of the target can help in identifying the resonant frequencies of the electrical wires, components and/or circuits of the target.

[00289] For example, consider that the digitally formed high power RF signal is directed towards an unmanned aerial vehicle (UAV) as a target. Depending on the size and type of the UAV, the resonant frequency of an electromagnetic signal that disables the UAV can depend on the length of a wire connecting the motor to the rotors powered by the motor. This wire can ran along the length of an arm of the UAV. Accordingly, by measuring the length and the width of the arm of the UAV, the length of the motor wire can be estimated which in turn can help in the determination of the center frequency of the electromagnetic signal.

[00290] Figure 20 is a flowchart schematically showing a method of estimating the resonant frequency of an electrical circuit/component of an UAV. The method can be implemented by any of the computer-controlled systems described herein, such as the system 100. The method comprises detecting an UAV as shown in block 2001. The UAV can be detected using the target detector 101. The target detector can comprise a camera which obtains an image of the UAV. An optional ranging system can be used to the determine the distance of the UAV from the target detector as shown in block 2003. The length and width of the arms of the UAV can be obtained from the obtained image as shown in block 2005. The resonant wire lengths can be determined from the measurements of the length and width of the arms of the UAV as shown in block 2007. The central frequency and other parameters of the waveform to be generated can be calculated from the resonant wire lengths as shown in block 2009. The waveform selector 208 can select a waveform based on the calculated central frequency and other parameters of the waveform as shown in block 2011.

[00291] The method of estimating the resonant frequency of an electrical circuit/component described above can be extended to other targets such as routers, communication devices, etc. In various implementations, the resonant frequencies of wires and traces of circuits in known targets can be obtained and stored in a memory accessible by the computer 102. If a known target is identified from the information obtained by the target detector 101, the appropriate resonance frequency can be selected by accessing the memory. In some implementations, the system can be configured to identify the resonant frequency by trial and error. For example, the frequency of the generated RF signal can be changed from a minimum frequency to a maximum frequency in steps of 10 - 100 MHz. The target can transmit signals or experience a wobble if the frequency of the generated RF signal is close to the resonant frequency of one or more electrical components. In this manner, the resonant frequency of the generated electromagnetic radiation can be identified. In various implementations, the target can comprise multiple sub-systems with wires/traces having different resonant frequencies. In such implementations, different electromagnetic signals with different resonant frequencies can achieve different effects depending on which sub-system they target.In addition to the frequency, the power of the generated electro-magnetic signal also has an effect on producing a desired effect on electrical components in a target. For example, an electro-magnetic signal having a first power in a first power range can damage one or more electrical components of the target. However, reducing the power to a second power in a second power range that is lesser than the first power range can reset the target. As another example, for some UAVs, the electro-magnetic signal having a first power in a first power range can completely disable UAV. However, reducing the power to a second power in a second power range lesser than the first power range can disable a control link in the UAV and cause the UAV to return home (which may cause the UAV to permanently remain in the return home mode).

[00292] In addition to frequency and power changing other parameters of the waveform such as modulation type, pulse width, pulse repetition interval can have different effects on different components. For example, time varying low frequency modulation waveforms or waveforms with bi-phase shift keying or general phase-shift keying can have unique effects on the target devices.

[00293] The systems discussed herein can be used to implement a closed loop, software-based, automated grid search approach to survey effects of high power microwaves on electronic devices such as, for example routers, computer equipment, controllers and unmanned aerial systems to identify vulnerabilities to high microwave radiation and/or EMP. Figure 21 illustrates an implementation of a testing system 2100 that includes a high power microwave generator 2103. The illustrated system can be similar to the systems described herein, such as the system 100. The testing system 2100 can comprise a computing system 2101, which can include an electronic processing system that is configured to learn the effect of high power microwave radiation/EMP a device under test 2105. The computing system 2100 can include a module that executes a waveform testing script which generates digital waveforms with different frequencies, powers and other parameters. A high power microwave radiation/EMP 2f04 can be generated by the generator f703 and be directed towards the device under test 2f05. The device under test (DUT) can comprise efectronic systems, such as, for exampie, routers, computer equipment, controfiers, or unmanned aeriaf systems. A sensing system 2W7 can check the heafth of the device under test 2W5 to monitor the effects of the high power microwave radiation/EMP f704. The sensing system 2W7 can be connected to the device under test 2f05. The information from the sensing system 2W7 can be provided to the computing system 2f0f, and the efectronic processing system can feam the effects of different frequency and power level of the high power microwave radiation/EMP on the device 2105. In various implementations, the computing system 2101 can use artificial intelligence or machine learning techniques to generate high power microwave radiation/EMP with different combinations of frequency and power level, direct high power microwave radiation/EMP with each of the different combinations towards the DUT, obtain information from the sensing system for each different combinations of frequency and power fevef and evafuate the effect of the high power microwave radiation/EMP with different combinations of frequency and power fevef. In this manner the computing system 2101 can identify the frequency range and power level for the high power microwave radiation/EMP that can cause damage/destruction/reset the DUT.

Other Variations

[00294] Features, materials, characteristics, or groups described in conjunction with a particular aspect, embodiment, or example are to be understood to be applicable to any other aspect, embodiment or example described herein unless incompatible therewith. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and/or all of the steps of any method or process so disclosed, may be combined in any combination, except combinations where at least some of such features and/or steps are mutually exclusive. The protection is not restricted to the details of any foregoing embodiments. The protection extends to any novel one, or any novel combination, of the features disclosed in this specification (including any accompanying claims, abstract and drawings), or to any novel one, or any novel combination, of the steps of any method or process so disclosed.

[00295] While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of protection. Indeed, the novel methods and systems described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made. Those skilled in the art will appreciate that in some embodiments, the actual steps taken in the processes disclosed and/or illustrated may differ from those shown in the figures. Depending on the embodiment, certain of the steps described above may be removed, others may be added. For example, the actual steps and/or order of steps taken in the disclosed processes may differ from those described and/or shown in the figure. Depending on the embodiment, certain of the steps described above may be removed, others may be added. For instance, the various components illustrated in the figures and/or described may be implemented as software and/or firmware on a processor, controller, ASIC, FPGA, and/or dedicated hardware. Furthermore, the features and attributes of the specific embodiments disclosed above may be combined in different ways to form additional embodiments, all of which fall within the scope of the present disclosure.

[00296] In some cases, there is provided a non-transitory computer readable medium storing instructions, which when executed by at least one computing or processing device, cause performing any of the methods as generally shown or described herein and equivalents thereof.

[00297] Any of the memory components described herein can include volatile memory, such random access memory (RAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate (DDR) memory, static random access memory (SRAM), other volatile memory, or any combination thereof. Any of the memory components described herein can include non-volatile memory, such as magnetic storage, flash integrated circuits, read only memory (ROM), Chalcogenide random access memory (C-RAM), Phase Change Memory (PC-RAM or PRAM), Programmable Metallization Cell RAM (PMC-RAM or PMCm), Ovonic Unified Memory (OUM), Resistance RAM (RRAM), NAND memory (e.g., single-level cell (SLC) memory, multi-level cell (MLC) memory, or any combination thereof), NOR memory, EEPROM, Ferroelectric Memory (FeRAM), Magnetoresistive RAM (MRAM), other discrete NVM (non-volatile memory) chips, or any combination thereof.

[00298] Any user interface screens illustrated and described herein can include additional and/or alternative components. These components can include menus, lists, buttons, text boxes, labels, radio buttons, scroll bars, sliders, checkboxes, combo boxes, status bars, dialog boxes, windows, and the like. User interface screens can include additional and/or alternative information. Components can be arranged, grouped, displayed in any suitable order.

[00299] Conditional language used herein, such as, among others, “can,” “could,” “might,” “may,” “e.g.,” and the like, unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements and/or steps. Thus, such conditional language is not generally intended to imply that features, elements and/or steps are in any way required for one or more embodiments or that one or more embodiments necessarily include logic for deciding, with or without other input or prompting, whether these features, elements and/or steps are included or are to be performed in any particular embodiment. The terms “comprising,” “including,” “having,” and the like are synonymous and are used inclusively, in an open-ended fashion, and do not exclude additional elements, features, acts, operations, and so forth. Also, the term “or” is used in its inclusive sense (and not in its exclusive sense) so that when used, for example, to connect a list of elements, the term “or” means one, some, or all of the elements in the list.

[00300] Disjunctive language such as the phrase “at least one of X, Y, Z,” unless specifically stated otherwise, is otherwise understood with the context as used in general to present that an item, term, etc., may be either X, Y, or Z, or any combination thereof (e.g., X, Y, and/or Z). Thus, such disjunctive language is not generally intended to, and should not, imply that certain embodiments require at least one of X, at least one of Y, or at least one of Z to each be present.

[00301] Language of degree used herein, such as the terms “approximately,” “about,” “generally,” and “substantially” as used herein represent a value, amount, or characteristic close to the stated value, amount, or characteristic that still performs a desired function or achieves a desired result. For example, the terms “approximately”, “about”, “generally,” and “substantially” may refer to an amount that is within less than 10% of, within less than 5% of, within less than 1% of, within less than 0.1% of, or within less than 0.01% of the stated amount.

[00302] Unless otherwise explicitly stated, articles such as “a” or “an” should generally be interpreted to include one or more described items. Accordingly, phrases such as “a device configured to” are intended to include one or more recited devices. Such one or more recited devices can also be collectively configured to carry out the stated recitations.

[00303] The foregoing description, for purposes of explanation, used specific nomenclature to provide a thorough understanding of the disclosure. However, it will be apparent to one skilled in the art that specific details are not required in order to practice the disclosed embodiments. Thus, the foregoing descriptions of specific embodiments are presented for purposes of illustration and description. They are not intended to be exhaustive or to limit the disclosure to the precise forms disclosed; obviously, many modifications and variations are possible in view of the above teachings. The embodiments were chosen and described in order to best explain the principles of the disclosure and its practical applications, they thereby enable others skilled in the art to best utilize the disclosure and various embodiments with various modifications as are suited to the particular use contemplated. It is intended that the claims as presented herein or as presented in the future and their equivalents define the scope of the protection.