IL253085B
Gallium nitride semiconductor structure and process for fabricating thereof
Abstract
This record has no abstract on file.
Term
No projected expiry on record.
- Priority and filed
- Published
- Today
13 members in 5 offices
Members13
| Document | Office | Kind | |
|---|---|---|---|
| IL253085A0 | Israel | A0 | |
| IL253085D0 | Israel | D0 | |
| US2018366558A1 | United States of America | A1 | |
| EP3419061A1 | European Patent Office (EPO) | A1 | |
| KR20180138138A | Republic of Korea | A | |
| SG10201802435TA | Singapore | A | |
| US10388752B2 | United States of America | B2 | |
| US2019326162A1 | United States of America | A1 | |
| US10692752B2 | United States of America | B2 | |
| IL253085A | Israel | A | |
| IL253085BThis record | Israel | B | |
| EP3419061B1 | European Patent Office (EPO) | B1 | |
| KR102549134B1 | Republic of Korea | B1 |
2 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Patent grantedGrantedFF | FF | |
| Patent renewed for 20 yearsKB20 | KB20 |
Numbers
- Publication
- 253085
- Application
- 25308517
Titles2
- English
- Gallium nitride semiconductor structure and process for fabricating thereof
- Hebrew
- מבנה מוליך למחצה גליום ניטריד ותהליך לייצורו
Classification
- CPC, 15
- H10P90/00
- H10P14/6339
- H10P14/3416
- H10D30/01
- H10H20/0137
- H10H20/018
- H10P90/1914
- H10D62/8503
- H10D30/015
- H10P14/2904
- H10P14/24
- H10P10/12
- H10P95/06
- H10D62/8325
- H10P14/3406
- IPC, 3
- H10D62 83
- H10D62 85
- H10D99 00