FR2559958B1
Method for making vertical MOSFET with reduced bipolar effects
Abstract
This record has no abstract on file.
Term
Term ended
Expired 20 February 2005, 21.6 years ago.
- Priority
- Filed
- Granted
- Expired
- Today
11 members in 5 offices
Priority claims4
| Document | Office | Kind | Date |
|---|---|---|---|
| 58260184 | United States of America | A | |
| 58260184 | United States of America | A | |
| 00582601 | – | – | – |
| US19840582601 | – | – | – |
Members11
| Document | Office | Kind | |
|---|---|---|---|
| GB8504367D0 | United Kingdom | D0 | |
| FR2559958A1 | France | A1 | |
| DE3505393A1 | Germany | A1 | |
| GB2154794A | United Kingdom | A | |
| JPS60202967A | Japan | A | |
| US4587713A | United States of America | A | |
| GB2154794B | United Kingdom | B | |
| FR2559958B1This record | France | B1 | |
| US4837606A | United States of America | A | |
| JPH061838B2 | Japan | B2 | |
| DE3505393C2 | Germany | C2 |
Numbers
- Publication, DOCDB
- 2559958
- Publication, EPODOC
- FR2559958
- Application
- 8502448
- Application, DOCDB
- 8502448
- Application, EPODOC
- FR19850002448
Titles2
- English
- FIELD-EFFECT METAL-OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- French
- DISPOSITIF SEMI-CONDUCTEUR METAL-OXYDE A EFFET DE CHAMP ET SON PROCEDE DE FABRICATION
Classification
- CPC, 3
- H10D30/66
- H10D62/393
- H10D30/0291
- IPC, 6
- H01L21 336
- H01L29 10
- H01L29 41
- H01L29 417
- H01L29 423
- H01L29 78