Apparatus for making controlled segregated phase domain structures

IS 2 373 147 T3

DESCRIPTION

Apparatus for manufacturing segregated phase domain structures in a controlled manner

Background information

Field of the invention

Embodiments of the invention generally relate to the field of materials. More particularly, embodiments of the invention relate to methods for controlling the formation of a segregated phase domain structure within a chemical reaction product, to compositions of matter that include such a segregated phase domain structure, and to machinery having a complex tool relief to manufacture such compositions

Related Art Analysis

Prior art copper indium selenide-based photovoltaic devices, sometimes referred to as CIS-based PVs, are known to those skilled in the solar cell art. CulnSe is the most reliable and highest performing material as a thin film to generate electricity from sunlight. One issue with this technology is that raw material supply constraints are going to emerge in the future, as PV CIS production increases. For example, indium does not occur naturally in highly concentrated ores. Indium is typically obtained from the discarded glues of zinc ores. As PV CIS production approaches the large-scale range of about 10 gigawatts / year to about 100 gigawatts / year, indium supply restrictions will manifest. These supply restrictions will lead to increased costs. Additionally, as PV CIS production increases, other raw material supply restrictions will also arise. What is required is a solution that reduces the amount of raw materials needed per watt of generating capacity in thin PV CIS films.

One approach to reducing the amount of raw materials required is to reduce the thickness of the PV CIS thin film material. The inherent absorption coefficient of CIS is very high (i.e. approximately 10⁵ cm^-1). This means that most of the incident light energy can be absorbed with a very thin film of CIS. The use of a rear face reflector can further reduce the thickness necessary to absorb most of the incident light energy. Although prior art PV CIS products are typically at least about 2 microns thick, it is important to appreciate that 0.25 microns is theoretically sufficient for a thin film of PV CIS located on a reflector on the backside to absorb the most of the energy of the incident light. What is also required is a solution that produces thinner PV CIS films.

Meanwhile, field-assisted simultaneous synthesis and transfer technology has been developed, which is directly applicable to the manufacture of thinner PV CIS films. Various aspects of this simultaneous field-assisted transfer and synthesis technology (aspects that may or may not be used together in combination) are described in US Pat. No. 6,736,986; 6,881,647; 6,787,012; 6,559,372; 6,500,733; 6,797,874; 6,720,239; and 6,593,213.

An advantage of simultaneous field-assisted transfer and synthesis technology is that it performs better as the precursor stack becomes finer. For example, the vapor pressure of selenium in a CIS-based reaction product layer is a function of temperature. The pressure required to contain the selenium is a function of the temperature required for the reaction process. It is important to appreciate the tension, if used, to achieve a low desired pressure as the thickness decreases. As the required voltage is reduced, the physical demands on the system (eg, stress on the dielectric) decrease. Therefore, as the precursor stack becomes thinner, the tension necessary to generate a given pressure decreases; which reduces the stress on the dielectric material (eg, a releasable layer), thus expanding the quota of materials that can be used as dielectric material.

Another advantage of the simultaneous field-assisted transfer and synthesis technology is that it allows less thermal consumption. The lower thermal consumption is a result of the higher speed of field-assisted simultaneous synthesis and transfer technology compared to alternative approaches, such as vapor deposition (physical or chemical). In addition to the time and energy savings provided by simultaneous field-assisted transfer and synthesis technology, the quality of the resulting products can also be improved. For example, in the case of CIS-based PV manufacturing, the lower thermal consumption allowed by the use of simultaneous field-assisted transfer and synthesis technology leads to the reduction of undesirable reactions, such as between selenium and molybdenum at the interface. between the CIS absorber and the metal contact on the rear side. Reducing this undesirable reaction results in a reduction in gloss loss, which in turn results in greater reflectance of the back face.

Recently, CIS thin films made by conventional techniques have been shown to contain domains resulting from fluctuations in chemical composition. ^{(1-2, 5)}. The undesirable precombination of

ES 2 373 147 T3 charge carriers take place at the boundaries between the nanodomains within said CIS-based PV absorber. Therefore, what is also required is a solution to control and, ideally, optimize the boundaries between these nanodomains with varying chemical compositions.

Another prior art is also known. For example, EP 1,385,364 (Seiko Epson) discloses that a substrate is designed by forming a recessed region on the surface of a substrate and depositing a liquid material on the surface at selected locations, adjacent to the recessed region. The liquid material is dispersed over the surface to an edge of the recessed region, at which point further dispersion is controlled by the effective enhancement of the contact angle of the liquid material relative to the surface, as provided by the recessed region.

In document US 2003/201010 a photovoltaic cell includes a first substrate, which has on its surface a first electrode layer, which has on its surface a semiconductor film on which a photosensitizer is adsorbed, and a second substrate, which has on its surface a second electrode layer. The first and second substrates are arranged so that the first electrode layer is located above the semiconductor film, and the second electrode layer is opposite each other, with an electrolyte disposed between them. The spacer particles are interposed between the semiconductor film and the second electrode layer, and at least one of the substrates having an electrode layer is transparent. A coating liquid for forming the semiconductor film includes both a component for forming the semiconductor film as well as spacer particles, dispersed in a dispersion medium.

Finally, in document US 6500733, systems and procedures for the synthesis of films, coatings or layers using containment of the pressure exerted by the precursor are described. One method includes exerting pressure between a first precursor layer, which is coupled to a first substrate, and a second precursor layer, which is coupled to a second substrate; forming a composition layer and moving the first substrate relative to the second substrate, the composition layer remaining coupled to the second substrate.

So far, the requirements for reduced raw materials, reduced thickness and controlled limits between nanodomains mentioned above have not been fully satisfied. In other words, a solution is therefore necessary that simultaneously solves all these problems.

Summary of the invention

There is a need for embodiments of the invention as recited in claims 1 to 6.

According to an example of this application, a method comprises: providing a first precursor on a first substrate; providing a second precursor on a second substrate; contacting the first precursor and the second precursor; reacting the first precursor and the second precursor to form a chemical reaction product; moving the first substrate and the second substrate relative to each other to separate the chemical reaction product of at least one member selected from the group consisting of the first substrate and the second substrate, characterized in that, to control the formation of a structure of phase domains segregated within the chemical reaction product, a constituent of at least one member selected from the group consisting of the first precursor and the second precursor is provided in an amount that varies periodically, substantially regularly, of an average amount relative to the initial spatial location.

According to another example of this application, a machine comprises: a first substrate and a second substrate, coupled to the first substrate, characterized in that, to control the formation of a structure of segregated phase domains within a chemical reaction product by controlling an amount of a constituent of a precursor that is present per surface area unitary, at least one member selected from the group consisting of the first substrate and the second substrate defines a periodically variable relief, substantially regular, with respect to the initial spatial location.

According to another example of this application, a composition of matter comprises: a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a structure of segregated phase domains that includes a plurality of domain structures, wherein at least one of the plurality of structures Domain includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product.

These and other aspects of the invention will be better appreciated and understood when considered in conjunction with the following description and accompanying drawings. It should be understood, however, that the following description, while indicative of the various embodiments of the invention and the numerous specific details thereof, is given by way of illustration and not limitation. Many substitutions, modifications, additions, and / or arrangements can be made within the scope of one embodiment of the invention and embodiments of the invention include all such substitutions, modifications, additions, and / or rearrangements.

IS 2 373 147 T3

Brief description of the drawings

The drawings accompanying and forming a part of this specification are included to describe certain embodiments of the invention. A clearer conception of the embodiments of the invention and the components combinable with, and the operation of the systems provided with, embodiments of the invention, will be more readily apparent by reference to the exemplary and therefore non-limiting embodiments. illustrated in the drawings, in which identical reference numerals (if they appear in more than one view) designate the same elements. Embodiments of the invention may be better understood by reference to one or more of these drawings, in combination with the description presented herein. It should be noted that the items illustrated in the drawings are not necessarily drawn to scale.

Figures 1A-1C are elevational views of pairs of substrates in which at least one of each pair defines a periodically variable relief, substantially regularly, with respect to the initial spatial location, representing an embodiment of the invention.

Figures 2A-2C are elevational views of pairs of substrates in which at least one of each pair carries a constituent of a precursor in an amount that varies periodically, substantially regularly, from an average amount with respect to a spatial location. initial.

Figures 3A-3D are plan views of segregated phase domain structures including a hexagonal array of segregated phase domains, depicting one embodiment of the invention.

Figures 3E-3H are plan views of segregated phase domain structures including an orthogonal matrix of segregated phase domains, depicting one embodiment of the invention.

Figures 4A-4C are schematic elevation views of a method for controlling the formation of a segregated phase domain structure using a back face contact defining a substantially regular, periodically variable relief (and electric field strength). ) with respect to the initial spatial location, which represents an embodiment of the invention.

Figures 5A-5C are schematic elevational views of a method for controlling the formation of a segregated phase domain structure using a tool that defines a periodically variable electric field strength, substantially regularly, with respect to the initial spatial location. , which represents an embodiment of the invention.

Figures 6A-6C are schematic elevational views of a method of controlling the formation of a segregated phase domain structure using a tool and a back face contact, both of which define a substantially regular, periodically varying relief. , with respect to the initial spatial location, which represents an embodiment of the invention.

Figures 6D-6F are schematic elevational views of a method for controlling the formation of a segregated phase domain structure using a back face contact that defines a substantially regular, periodically varying relief relative to a spatial location. basal, representing an embodiment of the invention.

Figures 7A-7C are schematic views of a hexagonal domain structure, depicting one embodiment of the invention.

Description of preferred embodiments

The embodiments of the invention, and the various advantageous features and details thereof, are more fully explained with reference to the non-limiting embodiments which are illustrated in the accompanying drawings and detailed in the following description. Descriptions of well-known starting materials, processing techniques, components, and equipment are omitted so as not to unnecessarily complicate embodiments of the invention in detail. It should be understood, however, that the detailed description and specific examples, while indicating preferred embodiments of the invention, are given by way of illustration only and not by way of limitation. The various substitutions, modifications, additions and / or rearrangements within the spirit and / or scope of the underlying inventive concept will be apparent to those skilled in the art from this disclosure.

Within this application, reference is made to various publications, with Arabic numerals, or the name of the main author followed by the year of publication in parentheses or square brackets. Full citations for these and other publications can be found at the end of the specification, immediately before the claims, and after the section headed for references. The disclosures of all these publications in their entirety are expressly incorporated herein by reference, for the purpose of indicating the background of embodiments of the invention and illustrating the state of the art.

This application contains a disclosure that is also contained in co-pending United States Patent Serial No. 11 / 331,442 (Agent File No. HELE 1180), filed on

ES 2 373 147 T3 of January 2006; and U.S. Patent Serial No. 11 / 330,905 (HELE Agent File No. 1180-2), filed January 12, 2006.

The United States patents referenced below disclose embodiments that are useful for their intended purposes. In this application, reference is made to the full contents of US Patent Nos. 6,736,986; 6,881,647; 6,787,012; 6,559,372; 6,500,733; 6,797,874; 6,720,239; 6,593,213; and 6,313,479.

The context of the invention may include controlling the formation of a segregated phase domain structure within a chemical reaction product. The context of the invention may include machinery for controlling the formation of a segregated phase domain structure by controlling the amount of a constituent of a precursor that is present per unit surface area. The context of the invention may include a chemical reaction product that includes a structure of segregated phase domains, including a plurality of domain structures.

The segregated phase domain structure includes a plurality of domain structures. The invention can include domain structures that define percolation networks. The invention can include domain structures that minimize the length of the path required for collection of the charge carrier (eg, columnar domains). At least one of the plurality of domain structures may include at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product. The invention can include domain structures that minimize the surface area of ​​the boundary (eg, circular columnar domains) and / or minimize the surface of the boundary along preferred path directions (eg, ribbed circular columnar domains). The invention may include the use of sodium to create less fuzzy (ie, more discrete) boundaries between domain structures.

The invention may include a characteristic length scale for the size (intradomain) of the domains (eg, "r" for the inner radius). The invention may include a characteristic length scale for the size (interdomain) of the gap (s) between domains (eg, "d" for center-to-center distance). By varying the ratio of characteristic domain size to characteristic domain spacing, the invention allows a relative volume of two (or more) domains to be controlled. By varying the absolute characteristic values ​​the invention makes it possible to control the ratio of a binding volume to the volumetric field free volume in two (or more) phase domains. The invention may include controlling domain spacing to control a ratio of domains and / or phases to volume or other parameter.

The invention may include a characteristic size distribution of the domains. Embodiments of the invention may be characterized by a narrow "r" size distribution (ie, monomodal). For example, embodiments of the invention may be characterized by a size distribution in which 80% of the cases in a domain are characterized by a size that is within 20% (plus or minus) of a scalar value r. It can be advantageous if 90% of the cases in a domain are characterized by a size that is within 10% (plus or minus) of a scalar value "r". Alternatively, embodiments of the invention may be characterized by a plurality of narrow "r" size distributions (ie, multimodal). Preferred embodiments of the invention avoid random size distributions (eg, of "r").

The invention can include domain structures of a size that are from about 1 nm to about 1 um, preferably from about 5 nm to about 100 nm. The invention can include domain structures that repeat at multiples of a crystallographic unit cell parameter from about 1 nm to about 200 nm, preferably from about 5 nm to about 50 nm. Regardless, it is important to appreciate that the exact size (magnitude) of the domains is not important.

The invention may include a characteristic size distribution of domain gaps. Embodiments of the invention may be characterized by a narrow "d" downsizing (ie, monomodal). For example, embodiments of the invention may be characterized by a separation distribution in which 80% of the cases of a domain are characterized by a separation that is within 20% (plus or minus) of an integer multiple of a scalar value d. It can be advantageous if 90% of the cases in a domain are characterized by a separation that is within 10% (plus or minus) of an integer multiple of a scalar value "d". Alternatively, embodiments of the invention may be characterized by a plurality of narrow spacing distributions of "r" (ie, multimodal). Preferred embodiments of the invention avoid random spacing distributions (eg, of "d").

The invention may include domain structures that repeat (are spaced) over a period of from about 1 nm to about 1 um, preferably from about 5 nm to about 100 nm. The invention can include domain structures that repeat at multiples of a period from about 1 nm to about 200 nm, preferably from about 5 nm to about 50 nm. However, it is important to appreciate that the exact size (magnitude) of the domain separations is not important.

IS 2 373 147 T3

The invention may include domain structures that define 6 folds, 4 folds, or other symmetry in two or three dimensions. However, it is important to appreciate that exact symmetry is not important. The invention can include domain structures that define a short range order. The invention can include domain structures that define a long interval order.

Referring to Figures 7A-7C, optimization of a hexagonal domain structure with respect to minimizing total R recombination will not be described. Figures 7A-7B refer to a first order approach to minimize total R recombination for a Hexagonal domain structure matrix having circular columns, assuming that the inter-absorber junction region is narrow, compared to the scalar dimensions r and d. Referring to Figures 7A-7B, a chemical reaction product 710 defining a first surface 712 and a second surface 714 is coupled to a back contact 720. The chemical reaction product 710 includes a structure of segregated phase domains, which includes a cylindrical domain structure 701 and a matrix domain structure 702. In this case, the matrix domain structure extends from the first surface 712 of the chemical reaction product 710 to the second surface 714 of the chemical reaction product 710.

The total volume of each hexagonal cell of height τ0 is given by ((3) ½ d² το) / 2 where d is the hexagonal cell-to-cell distance. The total R recombination (per cell) equals the recombination at the one R1 cylindrical domain region plus the two R2 hexagonal matrix domain recombination plus the recombination at the interface of regions one and region two Ri.

R = Ri + R2 + R¡

Recombination in the region of cylindrical domains one occurs by

Ri = pi (volume 1) = ρι ((το - τι) nr²) where p1 is the volumetric recombination rate in the region of cylindrical domains one.

Recombination in hexagonal matrix domain region two occurs by

R2 = p2 (((3) ½ d²T0) / 2 - (τ0 - τ1) nr²) where p2 is the volumetric recombination rate in hexagonal matrix domain region two.

Recombination at the interface between cylindrical region one and matrix domain region two occurs by

Ri = σί (2πτ (τ0 - τ1) + nr²) where Ci is the surface recombination rate at the interface (junction). Recombination rates p1 and p2 and recombination rate Ci are material properties, depending on compositions and processing histories.

Figure 7C refers to a second order approach to minimize total recombination R for a hexagonal domain structure matrix having circular columns, when the junction width is not small, compared to r and / or d. Referring to Figure 7C, the total binding width equals the binding width of the cylindrical domain plus the binding width of the matrix domain.

Wj = rj + dj

Total R recombination (per cell) equals recombination in the cylindrical field free domain region one R1 plus recombination in the hexagonal matrix field free domain region two R2 plus recombination in the charge recombination region in annulus one Ri, plus recombination in the charge recombination region in annulus two R3.

R = R1 + R2 + R1j + R2j

The following four equations for the terms R1, R2, R1j, and R2j are valid when τ> dj. If τ1 <dj, then we must set τ = 0. The recombination in the free domain region of cylindrical capo one is given by

R1 = Ρ1 ((τ0 - τ - rj) n (r - rj)²) where Ρ1 is the volumetric recombination rate in the free domain region of cylindrical field one.

Recombination in the two hexagonal matrix field free domain region occurs by

IS 2 373 147 T3

R2 = p2 (((3)^1/2d²To) / 2 - (το - τι + dj) n (r + dj)²) where p2 is the volumetric recombination rate in the two hexagonal matrix field free domain region.

Recombination at annular space charge recombination region one occurs by

Rij = pij (To - Ti) nr² - (το - τι + rj) n (r - η)²) where p-ij is the volumetric recombination rate in the ring space charge recombination region one. Recombination in the charge recombination region of annulus one occurs by

R2j = P2jfao - τι + dj) n (r + dj) n (r + dj)² - (το - τι) πτ²) where p2j is the volumetric recombination rate in the charge recombination region of annulus two. The recombination rates pi, p2, pij, and p2j are material properties, dependent on compositions and processing histories.

Referring to Figures 1A-1C, the invention may include periodically increasing, in a substantially regular manner, an amount of a precursor by flat coating a periodically recessed surface in a substantially regular manner. Referring to Figure 1A, a first substrate 102 includes a substantially regular, periodically recessed surface 104. A first precursor 106 is coupled to periodically recessed surface 104, in a substantially regular manner. It can be appreciated that there is relatively more of the first precursor 106, corresponding to an initial spatial location centered at a position 108 in the center of the embossed cell, compared to a position 110 at the edge of the embossed cell. A second precursor 114 is coupled to a second substrate 112. The first substrate 102 and the second substrate 112 are movable relative to each other. When the first precursor 106 and the second precursor 114 are brought into contact and heated (optionally under the influence of an electric field) the resulting reaction product can be compositionally rich in the constituents of the first precursor at a location corresponding to position 108 from the center of the raised cell, especially if the initial diffusion velocity is much less than the perpendicular diffusion velocity.

Referring to Figure 1B, a first precursor 126 is coupled to a first substrate 122. A second substrate 132 includes a substantially regular, periodically recessed surface 124. A second precursor 134 is coupled to periodically recessed surface 124, in a substantially regular manner. It can be appreciated that there is relatively more of the second precursor 134 at a location 138 from the center of the raised cell, compared to a location 130 from the edge of the raised cell. The first substrate 122 and the second substrate 132 are movable relative to each other. When the first precursor 126 and the second precursor 134 are brought into contact and heated (optionally under the influence of an electric field) the resulting reaction product will be compositionally rich in the constituents of the second precursor at a location corresponding to position 138 of the center of the cell with relief.

Referring to Figure 1C, a first substrate 142 includes a substantially regular, periodically recessed surface 144. A first precursor 146 is coupled to periodically recessed surface 144, in a substantially regular manner. It can be appreciated that there is relatively more of the first precursor 146 at position 158 in the center of the embossed cell, compared to a position 150 at the edge of the embossed cell. A second substrate 152 includes a substantially regular, periodically recessed surface 145. A second precursor 154 is coupled to periodically recessed surface 145 in a substantially regular manner. It can be appreciated that there is relatively more of the second precursor 154 at position 159 at the center of the embossed cell, compared to a position 151 at the edge of the embossed cell. The first substrate 142 and the second substrate 152 are movable relative to each other. When the first precursor 146 and the second precursor 154 are contacted and heated (optionally under the influence of an electric field), The resulting reaction product will be compositionally rich in the constituents of the first precursor at a location corresponding to position 158 of the center of the raised cell and will be compositionally rich in the constituents of the second precursor at a location corresponding to position 159 of the center of the cell with relief.

Referring to Figures 2A-2C, the invention may include a periodically increasing, substantially regularly, amount of a precursor by pre-depositing a plurality of constituent sources that include an excess of the constituent over an average amount. Referring to Figure 2A, a first substrate 202 includes a plurality of constitutive sources 204 periodically located, in a substantially regular fashion. A first precursor 206 is coupled to sources 204. It can be seen that there is relatively more of the first precursor 206 at positions 208 without sources 204, compared to positions 210 with sources 204. A second precursor 214 is coupled to a second substrate 212. The first substrate 202 and the second substrate 212 are movable relative to each other. When the first precursor 206 and the second precursor 214 are brought into contact and heated (optionally under the influence of an electric field), the resulting reaction product will be compositionally rich in the constituents of the first

ES 2 373 147 T3 precursor at locations corresponding to position 208 of the center of the embossed cell.

Referring to Figure 2B, a first precursor 226 is coupled to a first substrate 222. A second substrate 232 includes a plurality of constitutive sources 224 periodically located, in a substantially regular fashion. A second precursor 234 is coupled to sources 224. It can be appreciated that there is relatively more of the second precursor 234 at a center position 238, compared to edge positions 230. The first substrate 222 and the second substrate 232 can move relatively relative to each other. When the first precursor 226 and the second precursor 234 are brought into contact and heated (optionally under the influence of an electric field) the resulting reaction product will be compositionally rich in the constituents of the second precursor at a location corresponding to position 238 of the center of the cell with relief.

Referring to Figure 2C, a first substrate 242 includes a plurality of constitutive sources 244 periodically located in a substantially regular manner. A first precursor 246 is coupled to the plurality of periodically located sources 244, in a substantially regular fashion. It can be appreciated that there is relatively more of the first precursor 246 at a center position 258, compared to an edge position 250. A second substrate 252 includes a plurality of sources 245 periodically located, in a substantially regular manner. A second precursor 254 is coupled to the plurality of periodically located sources 245, in a substantially regular fashion. It can be appreciated that there is relatively more of the second precursor 254 at the center position 259, compared to an edge position 251. The first substrate 242 and the second substrate 252 can move relative to each other. When the first precursor 246 and the second precursor 254 are brought into contact and heated (optionally under the influence of an electric field), the resulting reaction product will be compositionally rich in the constituents of the first precursor at a location corresponding to position 258. from the center, and will be compositionally rich in the constituents of the second precursor at a location corresponding to position 259 from the center.

Referring to Figures 3A-3H, the raised surface and / or constituent sources may be located across a surface to define hexagonal symmetry, orthogonal symmetry, or other symmetry and / or space group. Referring to Figure 3A, the surface relief or fonts may define a hexagonal grid 310. Referring to Figure 3B, reaction products 320, the location of which corresponds to grid 310, can be columnar (to facilitate transport of the charge carrier), with a circular circumference. Referring to Figure 3C, the ratio of the matrix domain area to the columnar domain area can be controlled by locating the columns 330 of the reaction product closer to each other (eg, so that the columns are just touching). Referring to Figure 3D, the ratio of matrix domain to columnar domain can be further reduced by locating the columns 340 of the reaction product so that they overlap. Referring to Figure 3E, the surface relief or fonts can define an orthogonal grid 350. Referring to Figure 3F, the reaction products 360 whose location corresponds to the grid 350 can be columnar (to facilitate transport of the load carrier) with a circular circumference. Referring to Figure 3G, the ratio of matrix domain to columnar domain can be controlled by locating the columns 370 of the reaction product closer to each other (eg, so that the columns are just touching). Referring to Figure 3H, the ratio of matrix domain to columnar domain can be further reduced by locating the columns 380 of the reaction product so that they overlap.

Examples

Specific embodiments of the invention will now be further described by the following non-limiting examples, which will serve to illustrate various features in some detail. The following examples are included to facilitate understanding of the ways in which an embodiment of the invention can be practically carried out. It should be appreciated that the examples that follow represent embodiments that have been found to work well in the practice of the invention and thus can be considered to constitute preferred modes for the practical implementation of embodiments of the invention. However, it should be appreciated that many changes can be made to the disclosed exemplary embodiments, still obtaining an analogous or similar result without departing from the spirit and scope of one embodiment of the invention. Accordingly, the examples should not be construed as limiting the scope of the invention.

Example 1

Referring to Figures 4A-4C, this example relates to an embodiment of the invention, including a flat coating of a first precursor 410 on a surface of a tool 416, in which a first precursor constituent periodically increases substantially substantially. regular, previously depositing a plurality of constituent sources 412, which includes an excess of the constituent with respect to an average amount. This embodiment also includes the use of a switchable (eg, on-off), modulable (eg, field strength), reversible, (eg, polarity) electric field.

Referring to Figure 4A, a first precursor 410 includes sources 412. A second precursor 420 is provided on a rear contact 422. Referring to Figure 4B, the first precursor 410 and the second

ES 2 373 147 T3 precursor 420 are contacted and heated and an electric field is applied. With field bias applied as depicted in Figure 4B, the electric field tends to direct at least some copper ions away from the tool. The field as described exerts a force on the copper that is opposite to the direction of the chemical impulse on the copper, and can be called reverse polarization (as opposed to forward polarization). Of course, the direction of the field can be selected, the magnitude of the field can be controlled, and the field can be connected and / or disconnected. Meanwhile, the 412 sources form indiumgalium-rich beta domains. Referring to Figure 4C, after the electric field has been removed, the tool is detached and the domains remain intact.

Example 2

With reference to Figures 5A-5C, this example refers to an embodiment of the invention, including a flat coating of a first precursor on a surface of a tool where the first precursor constituent increases periodically, in a substantially regular manner, previously depositing a plurality of constituent sources that include an excess of the constituent over an average amount. This embodiment of the invention also includes a rear face contact that is flat, coated with a second precursor. This embodiment includes the use of a switchable (eg, on-off), modulable (eg, field power), reversible, (eg polarity) electric field strength, which varies periodically, substantially regularly, with with respect to the initial spatial location.

Referring to Figure 5A, a first precursor 510 includes the sources (In / Ga) and (Se) 1-y and In / Ga 512. The first precursor 510 is coupled to a planarized, releasable layer 514 that is coupled to a periodically recessed surface, substantially evenly, of a tool 516. The sources 512 can be self-assembled at locations corresponding to the surface relieved by photoionizing In / Ga particles and applying a negative polarization to the tool or by ionizing the In / Ga particles with a steady-flow gun and applying a positive polarization to the tool. . The use of steady flow gun photoionization and / or ionization to enable the location of quantum dots is described in US Patent No. 6,313,476. Of course, other self-assembly and / or deposition procedures may be used to locate the sources 512, such as self-organizing epitaxy (eg, on GaAs) and / or molecular capture and location techniques. A second precursor 520 includes CuxSe1-x. Referring to Figure 5B, the first precursor 510 and second precursor 520 are contacted and heated, and an electric field is applied. The electric field depicted tends to direct some of the copper ions away from the projections of the embossed tool, thereby forming copper-rich alpha domains. Directing the copper away from the tool helps avoid soldering of the reaction product to the tool. Meanwhile, the 512 sources form indium-gallium rich beta domains. Referring to Figure 5C, after the electric field is removed, the tool is detached and the domains remain intact.

Example 3

Referring to Figures 6A-6C, this example refers to an embodiment of the invention that includes a tool 610 in which the amount of a first precursor 612 is periodically increased, substantially evenly, by flat coating a periodically recessed surface. , on a substantially regular basis. This embodiment of the invention also includes a rear face contact 614 where a second precursor 616 is substantially planarized.

Referring to Figure 6A, the locations of the first additional precursor can be seen. Referring to Figure 6B, the resulting domains are columnar and extend from a first surface 620 of the reaction product to a second surface 622. Referring to Figure 6C, an emitter 649 is coupled to the reaction product.

Example 4

Referring to Figures 6D-6F, this example refers to an embodiment of the invention that includes a tool 660, which is flat coated with a first precursor 662. This embodiment of the invention also includes a rear face contact 664 wherein the amount of a second precursor 668 is periodically increased substantially regularly by flat coating a periodically recessed surface in a substantially regular manner.

Referring to Figure 6D, the locations of the second additional precursor correspond to locations where the domains rich in the second precursor will be located, adjacent to the second substrate. Referring to Figure 6E, only one of the resulting domains extends from a first surface 670 of the reaction product to a second surface 672. Referring to Figure 6F, an emitter 699 is coupled to the reaction product.

Example 5

Referring to Figures 8A-8C, this example refers to an embodiment of the invention, including flat coating of a first precursor on a surface of a tool, where a first constituent

ES 2 373 147 T3 periodically increases the precursor, in a substantially regular manner, with respect to an initial plane using a raised substrate. The result is an excess of the constituent over an average amount at locations corresponding to the individual relief of the embossed surface of the tool. This embodiment also includes the use of a switchable (eg on-off), modulable (eg, field power), reversible, (eg, polarity) electric field strength, which varies periodically, substantially regularly, with respect to the initial spatial location.

Referring to Figure 8A, a first precursor 810 is provided on a surface of the tool 815. A second precursor 820 is provided on a back contact 822. Referring to Figure 5B, the first precursor 810 and second precursor 820 are they are brought into contact and heated, and an electric field is applied. With the field bias applied as described in Figure 8B, the electric field tends to direct at least some of the copper ions away from the tool. It is important to appreciate that the field strength is higher in those locations on the tool surface that do not have relief. In this way, the electrostatic driving force also periodically increases substantially regularly with respect to an initial plane. The field as described exerts a force on the copper that is opposite to the direction of the chemical impulse on the copper, and can be called reverse polarization (as opposed to forward polarization). Of course, the direction of the field can be selected, the magnitude of the field can be controlled, and the field can be connected and / or disconnected. Meanwhile, the indium-gallium rich beta domains tend to form at locations that correspond to the individual reliefs of the relief surface of the tool. Referring to Figure 8C, after the electric field has been removed, the tool is detached and the domains remain intact.

Example 6

Referring to Figures 9A-9C, this example refers to an embodiment of the invention that includes a first precursor on a surface of a tool, in which a first constituent precursor increases periodically, in a substantially regular manner, relative to a initial plane, using a raised substrate, in combination with a liquid coating containing the first precursor constituent. The liquid coating is dried and then the remainder of the first precursor is deposited. The result is an excess of the constituent over an average amount at locations corresponding to the individual reliefs on the embossed surface of the tool. This embodiment again includes the use of a switchable (eg on-off), modulable (eg, field power), reversible, (eg polarity) electric field strength that varies periodically, substantially regularly, with respect to an initial spatial location.

Referring to Figure 9A, liquid coating 905 containing the first precursor constituent is applied to a surface of tool 515. Referring to Figure 9B, liquid coating 905 dries and capillary forces cause the first constituent of the precursor is collected in the deepest portions of the individual reliefs. Referring to Figure 9C, the remainder 910 of the first precursor is laid flat. A second precursor 920 is provided on a back contact 522. Referring to Figure 9D, the first precursor 910 and the second precursor 920 are contacted and heated and an electric field is applied. With the polarization of the electric field applied as depicted in Figure 9D, the electric field tends to direct at least some of the copper ions away from the embossed substrate. It is important to appreciate that the field strength is greater in those locations on the surface of the tool that do not have relief. In this way, the electrostatic driving force also increases periodically, in a substantially regular manner, with respect to the initial plane. Again, the direction of the field can be selected, the magnitude of the field can be controlled, and the field can be turned on and / or off. Referring to Figure 9E, the indium-gallium rich beta domains tend to form at locations corresponding to the individual reliefs of the relief surface of the tool. After the electric field has been removed, the tool is detached and the domains remain intact.

Example 7

Referring to Figures 10A-10D, this example refers to an embodiment of the invention, including a second precursor 1000 on a surface of a rear contact 1020, where a second precursor constituent rises periodically, in a substantially regular manner, by previously depositing a plurality of constituent sources 1010, including an excess of the constituent over an average amount. Again, this embodiment includes the use of a switchable (eg on-off), modulable (eg, field strength), reversible (eg, polarity) electric field.

Referring to Figure 10A, sources 1010 are formed at back contact 1020 by epitaxy. Referring to Figure 10B, a first precursor 1030 is provided on the surface of a tool. The first precursor 1030 and second precursor 1000 are contacted and heated, and the electric field is applied. With applied field bias as depicted in Figure 10C, the electric field tends to direct at least some of the copper ions away from the surface of the tool. The field as described exerts a force on the copper that is opposite to the direction of the chemical impulse on the copper, and can be called reverse polarization. As in the previous examples, the direction of the field can be selected, the magnitude of the field can be controlled, and the field can be connected and / or disconnected. Meanwhile, the sources

IS 2 373 147 T3

1010 they form copper-rich alpha domains. Referring to Figure 10D, after the electric field has been removed, the tool is detached and the domains remain intact.

Practical applications

A practical application of the invention, which has a value within the technological techniques, is the manufacture of photovoltaic devices, such as absorbent films or electroluminescent phosphor. Additionally, the invention is useful in conjunction with the manufacture of semiconductors (such as those used for the purpose of transistors) or in conjunction with the manufacture of superconductors (such as those used for the purpose of magnets or detectors) or the like. There are virtually innumerable uses for one embodiment of the invention, all of which are not necessarily detailed here.

Advantage

Embodiments of the invention can be profitable and advantageous for at least the following reasons. Embodiments of the invention can improve control of the formation of a segregated phase domain structure within a chemical reaction product. Embodiments of the invention can improve the boundary properties of a plurality of domain structures within a structure of segregated phase domains. Embodiments of the invention can improve the performance of chemical reaction products that include a structure of segregated phase domains. Embodiments of the invention improve quality and / or reduce costs, compared to previous approaches.

Definitions

The term layer is intended to generically mean thicker films, coatings and structures. The term "coating" is intended to subgenerically mean thin films, thick films, and thicker structures. The term "composition" is intended to generically mean organic and inorganic substances such as, but not limited to, chemical reaction products and / or physical reaction products. The term selenide is intended to mean a material that includes the element selenium and does not include enough oxygen to precipitate a separate selenate base; oxygen may be present in selenide. The term tool is intended to mean a substrate intended for reuse or multiple uses.

The term program and / or the phrase computer program is intended to mean a sequence of instructions designed for execution in a computer system (for example, a computer program and / or program may include a subroutine, a function, a procedure, an object procedure , an object implementation, an executable application, an application, a servlet (program that runs on a server), a source code, an object code, a shared library / dynamically loaded library and / or other sequence of instructions designed for execution on a computer or computer system). The term "radio frequency" is intended to mean frequencies less than or equal to about 300 GHz, as well as the infrared spectrum. The group numbers corresponding to the columns within the periodic table of the elements use the convention "New Notation" as can be seen in CRC Handbook of Chemistry and Physics, 81st Edition (2000).

The term "substantially" is intended to mean largely, but not necessarily fully, what is specified. The term "approximately" is intended to mean at least close to a given value (eg, within 10% of it). The term is generally intended to mean at least approximation to a given state. The term coupled is intended to mean connected, although not necessarily directly, and not necessarily mechanically. The term "proximal", as used herein, is intended to mean close, nearly adjacent, and / or coincident; and includes spatial situations in which specified functions and / or results (if any) can be performed and / or achieved. The term deployment is intended to mean to design, build, transport, install and / or operate.

The terms first or one and the terms at least a first and at least one are intended to mean the singular or the plural, unless it is clear from the intrinsic text herein that it means otherwise. The terms second or other, and the expressions at least one second or at least another are intended to mean the singular or the plural, unless it is clear from the intrinsic text of this document that it means otherwise. Unless expressly stated otherwise in the intrinsic text of this document, the term or is intended to mean one or inclusive and not one or exclusive. Specifically, a condition A or B is satisfied by any one of the following: A is true (or is present) and B (is false) or is not present. A is false (or is not present) and B is true (or is present) and both A and B are true (or are present). The terms a or an are used for grammatical style and merely for convenience.

The term plurality is intended to mean two or more than two. The term "any" is intended to mean all applicable members of a set or at least a subset of all applicable members of the set. The term any integer derivable therefrom is intended to mean an integer between the corresponding numbers cited in the specification. The term "any interval derivable therefrom" is intended to mean any interval within said corresponding numbers. The term means, when followed by the term "for" it is intended to mean hardware, firmware and / or software to achieve a

ES 2 373 147 T3 result. The term stage, when followed by the term "for", is intended to mean a (sub) procedure, (sub) process and / or (sub) routine to achieve the cited result.

The terms "comprises", "comprising", "includes", "which includes", "has" or "which has" or any other variation thereof are intended to cover a non-exclusive inclusion. For example, a method, process, item, or apparatus that comprises a list of items is not necessarily limited to only those items, but may include other items not expressly listed or inherent in said method, process, item, or appliance. The terms "consisting" (consists, consisted) and / or "comprising" (comprises, comprised) are intended to mean closed language that does not allow the cited procedure, apparatus or composition the inclusion of procedures, structures and / or ingredients other than those mentioned, except auxiliaries, adjuncts and / or impurities usually associated therewith. The citation of the term "basically" together with the term "consisting" (consists, consisted) and / or comprising (comprises, comprised) is intended to mean modified closed language, which leaves the cited procedure, apparatus and / or composition open only for the inclusion of unspecified procedures, structures and / or ingredients, which do not materially affect the basic novel characteristics of the cited procedure, apparatus and / or composition.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention pertains. In case of conflict, the present specification, including its definitions, shall prevail.

Conclution

The described embodiments and examples are illustrative only and are not intended to be limiting. Although embodiments of the invention may be implemented separately, embodiments of the invention may be integrated into the system or systems with which they are associated. All embodiments of the invention disclosed herein can be made and used without undue experimentation in light of the disclosure. Although the best mode of the invention contemplated by the inventors is disclosed, embodiments of the invention are not limited thereto. Embodiments of the invention are not limited by theoretical statements (if any) cited herein. It is not necessary to perform the individual steps of the embodiments of the invention in the disclosed manner, or combined in the disclosed sequences, but can be performed in each and every way and / or combined in each and every sequence. It is not necessary for the individual components of embodiments of the invention to be formed into the disclosed shapes, or to be combined into the disclosed shapes, but could be provided in each and every shape and / or combined in each and every one. settings. It is not necessary to manufacture the individual components from the disclosed materials, but could be manufactured from any and all suitable materials. Homologous replacements can be substituted for the substances described herein.

Those skilled in the art to which embodiments of the invention pertain may appreciate that various substitutions, modifications, additions, and / or rearrangements can be made to the features of embodiments of the invention, without departing from the scope of the underlying inventive concept. All of the disclosed elements and features of each of the disclosed embodiments may be combined with or substituted for the disclosed elements and features of each of the disclosed embodiments, except where such elements or features are mutually exclusive. The scope of the underlying inventive concept, as defined by the appended claims and their equivalents, covers all such substitutions, modifications, additions, and / or rearrangements.

The appended claims should not be construed to include limitations of the minus-plus function, unless such limitation is explicitly cited in a given claim using the expression "means" and / or "step to". Subgeneric embodiments of the invention are delimited by the accompanying independent claims and their equivalents. Specific embodiments of the invention are differentiated by the appended dependent claims and their equivalents.

REFERENCES (1) BJ Stanbery, The intra-absorber junction (IAJ) model for the device physics of copper indium selenide-based photovoltaics, 0-7803-8707-4 / 05 IEEE, filed January 5, 2005, pages 355- 358.

(2) Y. Yan, R. Noufi, KM Jones, K. Ramanathan, MM Al-Jassim and BJ Stanbery, Chemical fluctuation-induced nanodomains in Cu (In, Ga) Se2 films, Applied Physics Letters 87, 121904 American Institute of Physics, September 12, 2005.

(3) Billy J. Stanbery, Copper indium selenides and related materials for photovoltaic devices, 1040-8436 / 02 CRC Press, Inc., 2002, pages 73-117.

(4) BJ Stanbery, S. Kincal, L. Kim, TJ Anderson, OD Crisalle, SP Ahrenkiel and G. Lippold Role of Sodium in the Control of Defect Structures in CIS, 0-7803-5772-8 / 00 IEEE, 2000 , pages 440-445.

(5) 20th European Photovoltaic Solar Energy Conference, June 6-10, 2005, Barcelona, ​​Spain, pages 17441747.