Modular power semiconductor module

IS 2 279 243 T3

DESCRIPTION

Modular power semiconductor module.

The invention describes a modular power semiconductor module. In principle, power semiconductor modules of this type consist of a housing with a base plate and at least one electrically insulating substrate arranged therein. This substrate, in turn, is composed of a body of insulating material on which there is a large number of metallic connection surfaces isolated from each other, on which there are power semiconductor components connected to these connection surfaces according to the circuit. Advantageously, the substrate, in its lower part, has a flat metallic layer, comparable to the bonding surfaces.

In principle, power semiconductor modules of this type have been known for a long time, as disclosed for example in DE 39 37 045 A1. From DE 100 11 633 A1, for example, various modern configurations of power semiconductors of this type are known with a high power in relation to their construction size, which constitute the starting point of this invention.

DE 39 37 045 A1 discloses, for example, a power semiconductor module of the type mentioned above, which has a semi-bridge circuit within a housing. Such a circuit arrangement consists of two circuit breakers connected in line, and is often configured as a series circuit of power transistors, preferably Insulated Gate Bipolar Transistors (IGBTs). Free-running diodes are arranged antiparallel to the respective circuit breakers. The power semiconductor module also has connection elements for direct current and alternating current load connections. To activate power transistors, as well as to perform other functions, power semiconductor modules of this type also have auxiliary connection elements.

Typical power semiconductor modules have a large number of threaded connections to be mounted on flat bodies, usually heat sinks. The holes for said screw connections are preferably arranged in the corners of the power semiconductor modules.

For example, from DE 100 11 633 A1 another power semiconductor module is known, which has three half-bridge circuits, ie a 3-phase full bridge circuit, within a housing. The configurations of the half-bridge circuits are arranged in three parts of the housing. In this case, the respective circuit configurations also correspond to the state of the art described above.

A drawback of configuring power semiconductor modules with one half-bridge circuit per shell, see DE 39 37 045 A1, is that when constructing 3-phase full-bridge circuits from these individual modules, each module must be fixed by separate to heatsink. In this way, it is also not possible to replace a power semiconductor module with a 3-phase full bridge circuit, see DE 100 11 633 A1, by the individual modules mentioned above with a simple exchange, since the fixing possibilities are not identical.

On the other hand, a 3-phase full bridge circuit within a housing is disadvantageous, since in this case, failures found during manufacture within a half-bridge circuit represent a defect of the entire module. A disadvantage is also the fact that for other circuit configurations, for example an H-bridge, other housings are necessary with, in this case, for example, 2 half-bridge circuits, and therefore a rational manufacture with a number reduced structural components.

From EP 0,828,341 A2 a power semiconductor module is known which has a large number of individual substrates in a housing. These power semiconductor modules are linked to functional units by bus bars outside the modules. From EP 1,263,045 A1, part modules of a high-power semiconductor module are known which have their own housing and which are connected to a complete module with conductive bars.

Thanks to US 2002/027283 A1 it is also known to join modules of parts to a complete module.

JP 2000/156575 A discloses an arrangement for juxtaposing a large number of power semiconductor modules. To do this, coupling elements are placed in the screw holes of the different modules, and in this way they are positioned next to each other. The part modules are connected to each other for example with a driver plate.

The present invention aims to present a power semiconductor module, which has a modular structure based on a large number of modules of similar parts.

Said objective is achieved with a power semiconductor module according to claim 1, and special configurations can be found in the dependent claims.

The fundamental idea of ​​the invention is based on a power semiconductor module with a base plate to be mounted on a flat body, preferably a heat sink, according to the mentioned state of the art, composed of a frame-shaped housing with at least one electrically insulating substrate arranged therein. This substrate, in turn, is composed of a body of insulating material with a large number of metallic bonding surfaces isolated from each other that lie on its first main surface, as well as preferably a flat metallic layer arranged on its second main surface. . At the junction surfaces of the first main surface, and attached to these junction surfaces according to the circuit, a large number of power semiconductor components are arranged.

The power semiconductor module according to the invention is composed of a large number of part modules of the type mentioned above. Each part module has load connection and auxiliary connection elements, the load connections preferably being configured as a positive, a negative and at least one alternating current connection respectively. The auxiliary connections serve to activate the components of the power semiconductors, thus

ES 2 279 243 T3, for example as control connections or for connecting sensory components arranged in the power semiconductor module.

According to the invention, each module of parts has at least two notches in the form of round or elongated holes not surrounded on all sides that, when arranging the modules of parts in a power semiconductor module, complement the round or elongated holes on the sides adjacent to each other respectively.

Advantageously, the part modules are connected by means of fixing elements to a power semiconductor module. Suitable fastening elements are, for example, a cover covering all the part and / or connection modules in the area of ​​the frame-like housing and / or in the area of ​​the base plates.

The advantage of this configuration of a power semiconductor module is that: thanks to its division into part modules, it can be changed individually in case of failure; Thanks to the modules of similar parts, different power semiconductor modules can be manufactured with a reduced number of parts and; Despite the configuration from individual part modules, the power semiconductor module is compatible with the state of the art, for example with a 3-phase full bridge circuit; Thanks to the proper configuration of the recesses, two part modules can be attached to a heat sink by means of a "joint" screw respectively.

The invention is described in more detail by means of exemplary embodiments in conjunction with Figures 1 to 7.

Figure 1 shows a power semiconductor module according to the invention in plan view;

Figure 2 shows the arrangement of three part modules in a power semiconductor module according to the invention;

Figure 3 shows a detail of a power semiconductor module according to the invention in plan view (a) and in side view (b);

Figure 4 shows another configuration of a power semiconductor module according to the invention with a quick interlock connection of the cover;

Figure 5 shows a cutaway of another configuration of a power semiconductor module according to the invention with a quick interlocking connection of the part modules;

Figure 6 shows a power semiconductor module according to the invention with a junction of the part modules according to Figure 5;

Figure 7 shows a power semiconductor module according to the invention with a cover covering three part modules.

Figure 1 shows a module of parts of a power semiconductor module according to the invention in plan view. A module of parts (10) composed of a base plate (20) to be mounted on a heat sink is represented. For this, this base plate (20) has an open notch (22) in the form of an elongated hole at its corners respectively. These recesses are arranged in the edge region in such a way that their openings are arranged on the sides of the base plate which are assigned to another component module (10) of the power semiconductor module (see FIG. 2).

The parts module is further composed of a frame-shaped housing (30) and two electrically insulating substrates (50). The corresponding substrate, in turn, is composed of a body of insulating material (52) with a large number of metallic bonding surfaces (54) isolated from each other that lie on its first main surface away from the base plate. On its second major surface assigned to the heat sink, the substrate exhibits a flat metallization similar to the bonding surfaces of the first major surface. Power semiconductor components (56) are arranged on the junction surfaces (54), and joined thereto by means of a wire connection (58) according to the circuit. For electrical contact, the parts module (10) has connection elements (40) for the load connections (42) and the auxiliary connections (44). The joining surfaces (54) of the substrates (50) are joined to each other and to the connecting elements (40) by wire connections (62, 64, 46, 48). Alternatively, of course soldered connections are also possible.

Figure 2 shows a plan view of the arrangement of three part modules (10), according to figure 1, in a power semiconductor module (1) according to the invention. The part modules (10) are arranged next to each other on their sides. In this case, the recesses (22, FIG. 1) opened in the form of elongated holes result in elongated holes respectively formed in the middle of these recesses at the contact points of the part modules (10). These elongated holes (24), like the notches (22) left in the narrow parts of the power semiconductor module, serve to fix the power semiconductor module (1) to a heat sink.

Figure 3 shows a detail of a power semiconductor module according to the invention in plan view (a) and in side view (b). In this case, the casing (30) and one of the elongated holes (24), already described in figure 2, which is formed in the joint area (26) of two modules of parts (10) are represented. In addition, a round hole (72) in the cover (70) is shown. This cover (70) covers both part modules (10) and fixes them to a heat sink by means of a screw (80). The cover (70) also has a stop surface that rests on the parts (28) of the base plate (20) emptied by the casing (30).

Figure 4 shows another configuration of a power semiconductor module according to the invention with a quick interlock connection of the cover. Each of the housings (30) arranged on a base plate (20) of the part modules (10) has a large number of engagement tabs (32). These snap tabs form a quick interlocking connection with the assigned buttresses of the cap (70). Thus, by assembling the cover 70, a modular power semiconductor module is created from the individual part modules 10 with part modules fixed together.

Alternatively, of course, the lid 70 may have the snap tabs and the housing 30 the assigned buttresses.

Figure 5 shows a section of another configuration3

ES 2 279 243 T3 tion of a power semiconductor module according to the invention with a quick interlocking connection of the part modules (10). Different variants are offered, also combinable with each other, of the connection for fixing the part modules one next to the other. The base plate, the housing and / or the covers can have such fixing connections. For example, in this case a casing fixing interlocking quick connection (30) is shown. Each casing has, on a side assigned to another module of pieces, at least one, and preferably two, engagement tabs (34). The snap flange (34) of the workpiece housing (10) forms a locking connection with the abutment of the other workpiece housing (10). In this way, the entire power semiconductor module is created from a large number of individual part modules. In this configuration, the base plates (20) of the part modules have half holes (22) opposite each other. On assembly, these form a round hole (24) to secure the power semiconductor module to a heat sink.

An alternative for joining modules of adjacent individual pieces (10) is a rail, preferably metallic, arranged on the respective sides of the power semiconductor module, which covers the hollowed-out surfaces (28, figure 3) by the housing and which in this case has butt surfaces. This element, which fixes the part modules to a power semiconductor module, has round holes for threaded connections to the heat sink. These round holes are preferably arranged aligned with all the recesses (22), as well as the round or elongated holes (24) formed therefrom on the corresponding side.

Figure 6 shows a power semiconductor module according to the invention with a junction of the part modules according to figure 5. Both round holes (24), as well as the half hole (22), serve to fix ( see figure 7) to a heat sink. This power semiconductor module has a cover (not shown) for each module of parts respectively, since in this case the fixing connection is already provided by means of the quick interlocking connection of the housing (30).

Figure 7 shows a power semiconductor module (1) according to the invention with a cover (70) covering the three part modules (10). In its corresponding corners, the cover (70) has continuations (74) that protrude from the base plate and that extend to the heat sink to ensure a secure threaded connection to a heat sink thanks to the round holes (72a) of the cover (70), as well as the half holes (22, see figure 6). In this configuration of the power semiconductor module (1), the auxiliary connections (44) are not arranged in the narrow parts of the part modules (10), but along their sides.