Nova Patents
EP3243221A4

Integrated photonics including waveguiding material

Abstract

This record has no abstract on file.

Term

9.3 yearsto projected expiry

Projected expiry 5 January 2036, counted from filing; an application has no term until it is granted.

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  2. Filed
  3. Published
  4. Today
  5. Projected expiry

Every citation, both ways

Citations
DocumentRelationOfficeCited during
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JPH11195807ACitesJapanSearch report
JPH11195807ACitesJapanSearch report
TERZIEVA V ET AL: "Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates", THIN SOLID FILMS, ELSEVIER, AMSTERDAM, NL, vol. 517, no. 1, 3 November 2008 (2008-11-03), pages 172 - 177, XP025608663, ISSN: 0040-6090, [retrieved on 20080824], DOI: 10.1016/J.TSF.2008.08.144Non-patent–Search report
LÉOPOLD VIROT ET AL: "High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited]", PHOTONICS RESEARCH, vol. 1, no. 3, 1 October 2013 (2013-10-01), pages 140, XP055464164, DOI: 10.1364/PRJ.1.000140Non-patent–Search report