EP3006902A1

Lithography method and lithography system

Abstract

A lithography method for use in fabricating integrated circuits on a substrate, the method comprising: supporting the substrate on a moveable stage; imaging spatially patterned radiation onto the substrate; adjusting the position of the stage; using a method for determining information about changes along a degree of freedom of an encoder scale to monitor the position of the stage, the method comprising: monitoring the position of the first component using a method for determining information about changes along a degree of freedom of an encoder scale, the method comprising: directing a first beam and a second beam along different paths and combining the first and second beams to form an output beam, where the first and second beams are derived from a common source, the first and second beams have different frequencies, where the first beam contacts the encoder scale at a non-Littrow angle and the first beam diffracts from the encoder scale at least once; detecting an interference signal based on the output beam, the interference signal comprising a heterodyne phase related to an optical path difference between the first beam and the second beam; and determining information about a degree of freedom of the encoder scale based on the heterodyne phase, wherein the encoder scale or the optical assembly are attached to the stage and the information corresponds to the position of the stage along an axis.

EP3006902A1, drawing sheet 1
Sheet 1 of 30

Term

4.4 yearsto projected expiry

Projected expiry 16 February 2031, counted from filing; an application has no term until it is granted.

  1. Priority
  2. Filed
  3. Published
  4. Today
  5. Projected expiry

15 claims: 2 independent, 13 dependent

  1. 1
    A lithography method for use in fabricating integrated circuits on a substrate, the method comprising:supporting the substrate on a moveable stage;imaging spatially patterned radiation onto the substrate;adjusting the position of the stage;using a method for determining information about changes along a degree of freedom of an encoder scale to monitor the position of the stage, the method comprising: monitoring the position of the first component using a method for determining information about changes along a degree of freedom of an encoder scale, the method comprising: directing a first beam and a second beam along different paths and combining the first and second beams to form an output beam, where the first and second beams are derived from a common source, the first and second beams have different frequencies, where the first beam contacts the encoder scale at a non-Littrow angle and the first beam diffracts from the encoder scale at least once;detecting an interference signal based on the output beam, the interference signal comprising a heterodyne phase related to an optical path difference between the first beam and the second beam;and determining information about a degree of freedom of the encoder scale based on the heterodyne phase, wherein the encoder scale or the optical assembly are attached to the stage and the information corresponds to the position of the stage along an axis.
  2. 9
    A lithography system for use in fabricating integrated circuits on a wafer, the system comprising:a projection lens for imaging spatially patterned radiation onto the wafer;an encoder system configured to monitor the position of the wafer relative to the imaged radiation, the encoder system comprising: an optical assembly configured to derive a first beam and a second beam from an input beam, direct the first and second beams along different paths and combining the first and second beams to form an output beam, where the first and second beams have different frequencies;a diffractive encoder scale positioned in the path of the first beam so that the first beam contacts the diffractive encoder scale at a non-Littrow angle and the first beam diffracts from the diffractive encoder scale at least once;a detector positioned to detect the output beam;and an electronic processor configured to receive an interference signal from the detector, the interference signal comprising a heterodyne phase related to an optical path difference between the first and second beams, and determine the information about a degree of freedom of the encoder scale based on the heterodyne phase;and a positioning system for adjusting the position of the stage relative to the imaged radiation, wherein the wafer is supported by the stage.