EP2533332A2

Structured particles composed of silicon or a silicon-based material and method of fabricating thereof

Abstract

Pillared particles of silicon or silicon-comprising material and a method of fabricating the same. These particles may be used to create both a composite anode structure with a polymer binder, a conductive additive and a metal foil current collector, and an electrode structure. The structure of the particles overcoming the problems of charge/discharge capacity loss.

EP2533332A2, drawing sheet 1
Sheet 1 of 7

Term

1.8 yearsto projected expiry

Projected expiry 17 July 2028, counted from filing; an application has no term until it is granted.

  1. Priority
  2. Filed
  3. Published
  4. Today
  5. Projected expiry

15 claims: 11 independent, 4 dependent

  1. 1
    A composite structure for an electrochemical cell electrode comprising:as one of its active materials, a plurality of particles comprising silicon, each particle having a particle core and a plurality of silicon-comprising pillars extending therefrom.
  2. 3
    A composite structure as claimed in any preceding claim wherein the composite structure has a porous structure in which the mass of particles is 70-95%.
  3. 6
    A composite structure as claimed in any preceding claims wherein the percentage surface area of the particle core occupied by pillars is 10 to 50%.
  4. 7
    A composite structure as claimed in any preceding claim in which the pillars have a circular cross-section or a non-circular cross-section.
  5. 9
    A composite structure as claimed in any preceding claim wherein each pillar in the array is attached at a first end to the core or wherein the silicon-comprising pillars extend substantially radially therefrom the particle core.
  6. 10
    A composite structure as claimed in any preceding claim wherein the plurality of pillars are arranged in a regular or irregular array.
  7. 11
    A composite structure as claimed in any preceding claim in which the pillars have a first dimensions in the range 0.08 to 0.70 microns, and/or a second dimension in the range 4 to 100 microns.
  8. 12
    A composite structure as claimed in any preceding claim in which the particle and/or pillars comprise undoped silicon, n-type doped silicon, p-type doped silicon, an alloy of silicon, a silicon germanium mixture or metallurgical grade silicon, and/or wherein the purity of the silicon content is 90.00 to 99.95% by mass.
  9. 13
    A composite structure as claimed in any preceding claim wherein the particles have a first dimension of 10 µm to 1 mm.
  10. 14
    A composite structure as claimed in any preceding claim wherein the particle core comprises silicon.
  11. 15
    A method of forming a composite structure, the method comprising etching a plurality of silicon-comprising particles to form a plurality of silicon-comprising particles each having a particle core and a plurality of silicon-comprising pillars extending therefrom.