EP2532005A4 - SEMICONDUCTOR MEMORY DEVICE HAVING ELECTRICALLY FLOATING BODY TRANSISTOR, AND HAVING BOTH VOLATILE AND NON-VOLATILE FUNCTIONALITY AND METHOD

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Every citation, both ways

Citations
Document	Relation	Office	Cited during
US2009251966A1	Cites	United States of America	Search report
US2009316492A1	Cites	United States of America	Search report
See also references of WO 2011097592A1	Non-patent	–	Search report

255 members in 7 offices

This recordMember, by publication datePriority claim

Priority claims17

Priority claims
Document	Office	Kind	Date
302129P	United States of America	–	2010-02-07
30212910	United States of America	P	2010-02-07
309589P	United States of America	–	2010-03-02
30958910	United States of America	P	2010-03-02
797334	United States of America	–	2010-06-09
797320	United States of America	–	2010-06-09
79733410	United States of America	A	2010-06-09
79732010	United States of America	A	2010-06-09
897528	United States of America	–	2010-10-04
897516	United States of America	–	2010-10-04
897538	United States of America	–	2010-10-04
89752810	United States of America	A	2010-10-04
89751610	United States of America	A	2010-10-04
89753810	United States of America	A	2010-10-04
425820P	United States of America	–	2010-12-22
201061425820	United States of America	P	2010-12-22
2011023947	United States of America	W	2011-02-07

Members255

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Document	Office	Kind
US2008123418A1	United States of America	A1	2008-05-29
WO2008136813A2	World Intellectual Property Organization (WIPO)	A2	2008-11-13
WO2008136813A3	World Intellectual Property Organization (WIPO)	A3	2008-12-31
US2009108322A1	United States of America	A1	2009-04-30
US2009109750A1	United States of America	A1	2009-04-30
US2009316492A1	United States of America	A1	2009-12-24
US2010034041A1	United States of America	A1	2010-02-11
US2010046287A1	United States of America	A1	2010-02-25
US7760548B2	United States of America	B2	2010-07-20
US2010246264A1	United States of America	A1	2010-09-30
US2010246277A1	United States of America	A1	2010-09-30
US2010246284A1	United States of America	A1	2010-09-30
US7847338B2	United States of America	B2	2010-12-07
US2011032756A1	United States of America	A1	2011-02-10
US2011042736A1	United States of America	A1	2011-02-24
US2011044110A1	United States of America	A1	2011-02-24
WO2011097592A1	World Intellectual Property Organization (WIPO)	A1	2011-08-11
US2011228591A1	United States of America	A1	2011-09-22
US8036033B2	United States of America	B2	2011-10-11
US8059459B2	United States of America	B2	2011-11-15
US8077536B2	United States of America	B2	2011-12-13
US2012012915A1	United States of America	A1	2012-01-19
US2012014180A1	United States of America	A1	2012-01-19
US2012014188A1	United States of America	A1	2012-01-19
TW201205576A	Taiwan Province of China	A	2012-02-01
US8130547B2	United States of America	B2	2012-03-06
US8130548B2	United States of America	B2	2012-03-06
US2012069652A1	United States of America	A1	2012-03-22
US2012081940A1	United States of America	A1	2012-04-05
US2012081941A1	United States of America	A1	2012-04-05
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US8159868B2	United States of America	B2	2012-04-17
US8159878B2	United States of America	B2	2012-04-17
US2012106234A1	United States of America	A1	2012-05-03
US8174886B2	United States of America	B2	2012-05-08
US2012113712A1	United States of America	A1	2012-05-10
US8194451B2	United States of America	B2	2012-06-05
US8194471B2	United States of America	B2	2012-06-05
US8208302B2	United States of America	B2	2012-06-26
US8243499B2	United States of America	B2	2012-08-14
SG182538A1	Singapore	A1	2012-08-30
US8264875B2	United States of America	B2	2012-09-11
US8264876B2	United States of America	B2	2012-09-11
US2012230123A1	United States of America	A1	2012-09-13
US2012241708A1	United States of America	A1	2012-09-27
US8294193B2	United States of America	B2	2012-10-23
EP2532005A1	European Patent Office (EPO)	A1	2012-12-12
US2013015517A1	United States of America	A1	2013-01-17
US8391066B2	United States of America	B2	2013-03-05
CN102971797A	China	A	2013-03-13
US2013148422A1	United States of America	A1	2013-06-13
US8472249B2	United States of America	B2	2013-06-25
US8514622B2	United States of America	B2	2013-08-20
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US8531881B2	United States of America	B2	2013-09-10
US2013250685A1	United States of America	A1	2013-09-26
SG193169A1	Singapore	A1	2013-09-30
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US8570803B2	United States of America	B2	2013-10-29
US2013292635A1	United States of America	A1	2013-11-07
US2013301349A1	United States of America	A1	2013-11-14
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US8711622B2	United States of America	B2	2014-04-29
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US8837247B2	United States of America	B2	2014-09-16
US2014319621A1	United States of America	A1	2014-10-30
US2014332899A1	United States of America	A1	2014-11-13
US2014340972A1	United States of America	A1	2014-11-20
US2014355343A1	United States of America	A1	2014-12-04
US8937834B2	United States of America	B2	2015-01-20
US8995186B2	United States of America	B2	2015-03-31
US9001581B2	United States of America	B2	2015-04-07
US9030872B2	United States of America	B2	2015-05-12
US2015170743A1	United States of America	A1	2015-06-18
US2015187776A1	United States of America	A1	2015-07-02
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US2015221650A1	United States of America	A1	2015-08-06
IN6399DEN2012A	India	A	2015-10-02
US9153309B2	United States of America	B2	2015-10-06
US9153333B2	United States of America	B2	2015-10-06
US2015310917A1	United States of America	A1	2015-10-29
US9208840B2	United States of America	B2	2015-12-08
US9209188B2	United States of America	B2	2015-12-08
US2015371707A1	United States of America	A1	2015-12-24
US9230965B2	United States of America	B2	2016-01-05
US2016005741A1	United States of America	A1	2016-01-07
US2016005750A1	United States of America	A1	2016-01-07
US9236382B2	United States of America	B2	2016-01-12
US2016056287A1	United States of America	A1	2016-02-25
US2016078921A1	United States of America	A1	2016-03-17
US2016086655A1	United States of America	A1	2016-03-24
EP2532005A4This record	European Patent Office (EPO)	A4	2016-06-22

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Events

Legal events, newest first
	Event	Code	Office
2020-02-26	Application refused18R	18R	EP
2020-01-24	Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION HAS BEEN REFUSEDSTAA	STAA	EP
2019-09-17	Refusal decision now finalR003	R003	DE
2017-03-08	First examination report despatched17Q	17Q	EP
2017-02-03	Information on the status of an ep patent application or granted ep patentGrantedSTATUS: EXAMINATION IS IN PROGRESSSTAA	STAA	EP
2016-06-22	Supplementary search report drawn up and despatched (corrected)RA4	RA4	EP
2016-06-22	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2016-06-22	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2016-06-22	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2016-06-22	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2013-05-15	Request for extension of the european patent (deleted)DAX	DAX	EP
2012-12-12	Request for examination filed17P	17P	EP
2012-12-12	Designated contracting statesAK	AK	EP
2012-11-09	Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI	PUAI	EP

Numbers

Publication: 2532005
Application: 117405035

Titles3

German: HALBLEITERSPEICHERVORRICHTUNG MIT ELEKTRISCH SCHWEBENDEM KÖRPERTRANSISTOR MIT SOWOHL FLÜCHTIGER ALS AUCH NICHTFLÜCHTIGER FUNKTIONALITÄT SOWIE VERFAHREN
English: SEMICONDUCTOR MEMORY DEVICE HAVING ELECTRICALLY FLOATING BODY TRANSISTOR, AND HAVING BOTH VOLATILE AND NON-VOLATILE FUNCTIONALITY AND METHOD
French: DISPOSITIF DE MÉMOIRE À SEMI-CONDUCTEURS COMPORTANT UN TRANSISTOR À CORPS ÉLECTRIQUEMENT FLOTTANT, DISPOSITIF DE MÉMOIRE À SEMI-CONDUCTEURS AYANT UNE FONCTION VOLATILE ET NON VOLATILE, ET PROCÉDÉ DE FONCTIONNEMENT ASSOCIÉ

Classification

CPC, 19: G11C14/0018
H10B12/20
G11C11/404
G11C11/565
G11C16/0416
G11C2211/4016
H10B12/00
H10B41/35
H10B41/30
H10D62/115
H10D64/661
H10D30/0411
H10D30/0413
H10D30/711
H10D30/68
H10D30/681
H10D30/6892
G11C16/06
G11C16/0433
Filled: the office’s first classification
IPC, 13: G11C11 34
H01L27 108
H01L29 78
G11C11 404
H10B69 00
H10D30 68
H10B12 00
H10B41 00
H10B41 30
H10B41 35
H10D62 10
H10D64 27
H10D64 66

Designated states1

Contracting states, 1: Türkiye

Semiconductor memory device having electrically floating body transistor, and having both volatile and non-volatile functionality and method

Abstract

Term