EP2294586B1

Conductive compositions and processes for use in the manufacture of semiconductor devices

Abstract

This record has no abstract on file.

EP2294586B1, drawing sheet 1
Sheet 1 of 6

Term

2.7 yearsleft in the term

Expires 29 May 2029.

  1. Priority
  2. Filed
  3. Granted
  4. Today
  5. Expires

15 claims: 3 independent, 12 dependent

  1. 1
    A thick film conductive composition comprising:a) one or more electrically conductive powders;b) one or more glass frit;dispersed in c) organic medium, wherein the organic medium comprises one or more components selected from the group consisting of: Bis(2-(2Butoxyethoxy)Ethyl) Adipate, dibasic ester, Octyl Epoxy Tallate, and pentaerythritol ester of hydrogenated rosin,
  2. 7
    The thick film conducive composition of any preceding claim, wherein the organic medium comprises dibasic ester.
  3. 8
    A structure comprising the thick film composition of Claim 1 on a substrate.
  4. 9
    The structure of Claim 8 wherein the substrate is one or more insulating layers.
  5. 10
    The substrate of Claim 8 comprising one or more semiconductor substrates.
  6. 11
    A method of manufacturing a semiconductor device comprising:a) providing one or more semiconductor substrates, one or more insulating films, and a thick film composition, wherein the thick film composition comprises: i) one or more electrically conductive powders, ii) one or more glass frits, dispersed in iii) an organic medium selected from the group consisting of: Bis(2-(2Butoxyethoxy)Ethyl) Adipate, dibasic ester, Octyl Epoxy Tallate, and pentaerythritol ester of hydrogenated rosin, b) applying the insulating film on the semiconductor substrate;c) applying the thick film composition on the insulating film on the semiconductor substrate;and d) firing the semiconductor, insulating film and thick film composition.
  7. 12
    The method of Claim 11 wherein the Insulating film comprises one or more components selected from:titanium oxide, silicon nitride, SiNx:H, silicon oxide, and silicon oxide/titanium oxide.