EP2267775A3

Independently programmable memory segments in isolated N-wells within a PMOS EEPROM array

Abstract

An array of P-channel memory cells (401...416) is separated into independently programmable memory segments by creating multiple, electrically isolated N-wells (301,302) upon which the memory segments are fabricated. The methods for creating the multiple, electrically isolated N-wells includes p-n junction isolation and dielectric isolation.

EP2267775A3, drawing sheet 1
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Projected expiry passed 17 March 2020, 6.5 years ago.

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