EP2207204A3

Solid-state image pickup element and driving method thereof

Abstract

A solid-state image pickup element includes: (A) a light receiving/charge accumulating region (120) formed in a semiconductor layer (11) and formed by laminating M (where M ≥ 2) light receiving/charge accumulating layers (121,122,123); (B) a charge outputting region (140) formed in the semiconductor layer (11); (C) a depletion layer forming region (150) formed of a part of the semiconductor layer (11), the part of the semiconductor layer (11) being situated between the light receiving/charge accumulating region (120) and the charge outputting region (140); and (D) a control electrode region (160) for controlling a state of formation of a depletion layer in the depletion layer forming region (150), wherein the solid-state image pickup element further includes light receiving/charge accumulating layer extending section (121A,122A,123A) extending from each light receiving/charge accumulating layer (121,122,123) to the depletion layer forming region (150).

EP2207204A3, drawing sheet 1
Sheet 1 of 1

Term

3.3 yearsto projected expiry

Projected expiry 4 January 2030, counted from filing; an application has no term until it is granted.

  1. Priority
  2. Filed
  3. Published
  4. Today
  5. Projected expiry

1 sheet

  1. Sheet 1