EP2139054A3

Memory device and method of manufacturing the same

Abstract

Provided are a memory device formed using one or more source materials not containing hydrogen as a constituent element and a method of manufacturing the memory device. One or more source materials are SiCl4, Si2CL6, Si(NO2)4, Si(N2O2)2, SiF4, SiF6 or Si(CNO)4.

EP2139054A3, drawing sheet 1
Sheet 1 of 1

Term

Projected expiry 24 June 2029.

  1. Priority
  2. Filed
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  4. Today
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1 sheet

  1. Sheet 1