Nova Patents
EP2136193A2

Pressure sensor device

Abstract

A semiconductor pressure sensor for a pressure sensor device has a pressure detection element (12) which comprises a membrane made of semiconductor material, particularly silicon. The sensor (10) includes a support having a three-dimensional body (11) passed through by a detection passage. The detection element (12) is made integral with a first end face of the three-dimensional body (11), substantially at a respective end of the detection passage. The support is configured to serve the function of a mechanical and/or hydraulic adaptor or interface, with the aim of mounting the sensor (10) into a pressure sensor device, particularly to allow mounting the pressure sensor (10) into a pressure sensor device configured for mounting a sensor of the type referred to as monolithic or ceramic.

EP2136193A2, drawing sheet 1
Sheet 1 of 10

Term

Projected expiry 16 June 2029.

  1. Priority
  2. Filed
  3. Published
  4. Today
  5. Projected expiry

15 claims: 6 independent, 9 dependent

  1. 1
    A semiconductor pressure sensor for a pressure sensor device (101), the sensor (10) having a pressure detection element (12) which comprises a membrane (22) made of semiconductor material, particularly silicon, the sensor (10) being characterised in that it includes a support (11) having a three-dimensional body (11;11a) passed through by a detection passage (13, 15;13a, 15a;15), the detection element (12) being made integral to a first end face of the three-dimensional body (11;11a) substantially at a respective end of the detection passage (13, 15;13a, 15a;15), the support (11) being configured to serve the function of a mechanical and/or hydraulic adaptor or interface with the aim of mounting the sensor (10) into a pressure sensor device (101), particularly to allow mounting the pressure sensor (10) into a pressure sensor device (101) configured for mounting a sensor of the type referred to as monolithic or ceramic.
  2. 4
    The sensor according to claims 2 and 3, further comprising second electrical connection means (29) operatively interposed between the terminals (23) of the die (20) and the first connection means (28) associated to the support body (11), the second connection means (29) preferably being of the flexible type.
  3. 8
    The sensor according to at least one of claims 1 - 5, wherein the die (20) has a respective blind cavity (21), having a bottom defined by the membrane (22) made of semiconductor material, or a hermetic chamber (21a) is entirely defined inside the die (20), having a bottom wall defined by the membrane (22) made of semiconductor material.
  4. 10
    The sensor according to at least one of the preceding claims, wherein:- the support (11) is monolithic or it is made up of several body parts (11a, 11b) made integral to each other, and/or - the support (11) is at least partially made of a material selected from among: ceramic materials, synthetic materials, thermoplastic materials, thermosetting materials, metal oxides, metal materials, semiconductors, and/or - the support (11) is a generally cylindrical-shaped or has a substantially circular cross-section, and/or - the detection passage (13, 15;13a, 15a;15) has at least one portion having a substantially circular cross- section, and/or - the support (11) is provided with positioning and/or orientation means (16;16a), and/or - the support (11) defines a region (14a) for holding a protection material of the detection element, such as gel.
  5. 11
    A pressure sensor device which comprises:- a casing (102a, 103a;70, 74) defining a chamber (106, 120;106) and an inlet passage (114);- a pressure sensor (10) accommodated in the casing (106, 120;106), - a circuit arrangement (126, 127, 130) to which the pressure sensor (10) is electrically connected, characterised in that the sensor (10) is a semiconductor sensor according to one or more of claims 1 - 12.
  6. 14
    Method for manufacturing a semiconductor pressure sensor (10), the method comprising the operations of:i) providing for a pressure detection element (12) having a membrane (22) made of semiconductor material, particularly silicon, ii) providing for a three-dimensional body (11;11a) passed through by a passage (13, 15;13a, 15a;15), iii) making the detection element (12) integral with the first end face of the three-dimensional body (11;11a), substantially at a respective end of the passage (13, 15;13a, 15a;15), such that the three-dimensional body (11;11a) forms a support (11) or a main part of a support of the sensor (10), the support (11) being configured to serve the function of a mechanical and/or hydraulic adaptor or interface with the aim of mounting the sensor (10) into a pressure sensor device (101), particularly to allow mounting the pressure sensor (10) into a pressure sensor device (101) configured for mounting a sensor of the type referred to as monolithic or ceramic.