EP2003705A4
Method for manufacturing gallium nitride compound semiconductor light-emitting device, gallium nitride compound semiconductor light-emitting device and lamp using same
3 sheets
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Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| JP2005109283A | Cites | Japan | Search report |
| US2006006407A1 | Cites | United States of America | Search report |
| GB2280308A | Cites | United Kingdom | Search report |
| See also references of WO 2007108532A1 | Non-patent | – | Search report |
13 members in 7 offices; this record represents the family
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 2006080883 | Japan | – | |
| 2006080883 | Japan | A | |
| 2007056007 | Japan | W |
Members13
| Document | Office | Kind | |
|---|---|---|---|
| WO2007108532A1 | World Intellectual Property Organization (WIPO) | A1 | |
| JP2007258446A | Japan | A | |
| TW200810151A | Taiwan Province of China | A | |
| KR20080102288A | Republic of Korea | A | |
| EP2003705A1 | European Patent Office (EPO) | A1 | |
| CN101405879A | China | A | |
| US2010230714A1 | United States of America | A1 | |
| CN101405879B | China | B | |
| TWI343131B | Taiwan Province of China | B | |
| KR101060830B1 | Republic of Korea | B1 | |
| JP5232969B2 | Japan | B2 | |
| EP2003705A4This record | European Patent Office (EPO) | A4 | |
| EP2003705B1 | European Patent Office (EPO) | B1 |
70 legal events, as 9 offices reported them to INPADOC
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| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Gb: european patent ceased through non-payment of renewal feeCeasedGBPC | GBPC | EP | |
| No opposition filedOpposition26N | 26N | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
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| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Patent ceasedCeasedPL | PL | CH | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Deletion acc. to par. 5 (withdrawal of the translation of the ep patent)MK05 | MK05 | AT | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Invalidated european patentMG4D | MG4D | LT | |
| Patent invalid in the netherlands as no translation has been filedMP | MP | NL | |
| Dpma publication of mentioned ep patent grantGrantedR096 | R096 | DE | |
| European patents granted designating irelandGrantedFG4D | FG4D | IE | |
| European patent takes effect as a national patent in ch/liEP | EP | CH | |
| Reference to at number (ep patent validated in austria)REF | REF | AT | |
| Designated contracting statesAK | AK | EP | |
| European patent grantedGrantedFG4D | FG4D | GB | |
| (expected) grantORIGINAL CODE: 0009210GRAA | GRAA | EP | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE PATENT HAS BEEN GRANTEDSTAA | STAA | EP | |
| Grant fee paidORIGINAL CODE: EPIDOSNIGR3GRAS | GRAS | EP | |
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| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: GRANT OF PATENT IS INTENDEDSTAA | STAA | EP | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | EP | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | EP | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | EP | |
| Amendment of ipc main classPREVIOUS MAIN CLASS: H01L0033000000R079 | R079 | DE | |
| First examination report despatched17Q | 17Q | EP | |
| Supplementary search report drawn up and despatchedA4 | A4 | EP | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | EP | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | EP | |
| Party data changed (applicant data changed or rights of an application transferred)RAP1 | RAP1 | EP | |
| Request for extension of the european patent (deleted)DAX | DAX | EP | |
| Request for examination filed17P | 17P | EP | |
| Designated contracting statesAK | AK | EP | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI | EP |
Numbers
- Publication
- 2003705
- Application
- 77394484
Titles3
- German
- VERFAHREN ZUR HERSTELLUNG EINER GALLIUMNITRIDVERBINDUNGSHALBLEITERLEUCHTANORDNUNG, GALLIUMNITRIDVERBINDUNGSHALBLEITERLEUCHTANLEITUNG UND LAMPE DAMIT
- English
- METHOD FOR MANUFACTURING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND LAMP USING SAME
- French
- PROCEDE DE FABRICATION DE DISPOSITIF ELECTROLUMINESCENT A BASE DE COMPOSE SEMI-CONDUCTEUR DE NITRURE DE GALLIUM, DISPOSITIF ELECTROLUMINESCENT A BASE DE COMPOSE SEMI-CONDUCTEUR DE NITRURE DE GALLIUM ET LAMPE UTILISANT CE DISPOSITIF
Classification
- CPC, 7
- H10H20/816
- H10H20/01335
- H10H20/01
- H10H20/819
- H10H20/825
- H10W90/756
- H10W74/00
- IPC, 8
- H01L33 20
- H01L33 32
- H01L33 22
- H01L33 62
- H01L33 42
- H01L33 56
- H01L33 60
- H10P95 90
Designated states1
- Contracting states, 1
- Türkiye
