Nova Patents
EP1998902A2

High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material

Abstract

This record has no abstract on file.

Term

Projected expiry 23 February 2027.

  1. Priority
  2. Filed
  3. Published
  4. Today
  5. Projected expiry

211 members in 9 offices

This recordMember, by publication datePriority claim

Priority claims23

Priority claims
DocumentOfficeKindDate
361515United States of America–
361103United States of America–
361522United States of America–
361498United States of America–
361433United States of America–
361464United States of America–
361523United States of America–
36151506United States of AmericaA
36110306United States of AmericaA
36152206United States of AmericaA
36149806United States of AmericaA
36143306United States of AmericaA
36146406United States of AmericaA
36152306United States of AmericaA
395668United States of America–
396199United States of America–
395438United States of America–
394849United States of America–
39566806United States of AmericaA
39619906United States of AmericaA
39543806United States of AmericaA
39484906United States of AmericaA
2007062764United States of AmericaW

Members211

Family members, oldest first
DocumentOfficeKind
US2005183767A1United States of AmericaA1
US2005183768A1United States of AmericaA1
US2005186338A1United States of AmericaA1
US2005186342A1United States of AmericaA1
WO2005081788A2World Intellectual Property Organization (WIPO)A2
WO2005081789A2World Intellectual Property Organization (WIPO)A2
DE102005003842A1GermanyA1
US2006060237A1United States of AmericaA1
US2006062902A1United States of AmericaA1
WO2006033858A1World Intellectual Property Organization (WIPO)A1
WO2005081788A3World Intellectual Property Organization (WIPO)A3
US2006153985A1United States of AmericaA1
WO2006073437A2World Intellectual Property Organization (WIPO)A2
US2006157103A1United States of AmericaA1
US2006160261A1United States of AmericaA1
WO2006078985A2World Intellectual Property Organization (WIPO)A2
US2006207644A1United States of AmericaA1
WO2006101986A2World Intellectual Property Organization (WIPO)A2
US7115304B2United States of AmericaB2
EP1723265A2European Patent Office (EPO)A2
WO2006078985A3World Intellectual Property Organization (WIPO)A3
WO2006135377A2World Intellectual Property Organization (WIPO)A2
US2007000537A1United States of AmericaA1
EP1747590A2European Patent Office (EPO)A2
WO2005081789A3World Intellectual Property Organization (WIPO)A3
WO2007022221A2World Intellectual Property Organization (WIPO)A2
US2007074755A1United States of AmericaA1
WO2007041533A2World Intellectual Property Organization (WIPO)A2
US2007092648A1United States of AmericaA1
WO2007065096A2World Intellectual Property Organization (WIPO)A2
WO2006073437A3World Intellectual Property Organization (WIPO)A3
KR20070064345ARepublic of KoreaA
EP1805804A1European Patent Office (EPO)A1
US2007163383A1United States of AmericaA1
US2007163637A1United States of AmericaA1
US2007163638A1United States of AmericaA1
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WO2007101136A2World Intellectual Property Organization (WIPO)A2
WO2007101138A2World Intellectual Property Organization (WIPO)A2
WO2007106756A2World Intellectual Property Organization (WIPO)A2
US7276724B2United States of AmericaB2
WO2007022221A3World Intellectual Property Organization (WIPO)A3
CN101061588AChinaA
EP1849191A2European Patent Office (EPO)A2
EP1805804A4European Patent Office (EPO)A4
WO2007101099A3World Intellectual Property Organization (WIPO)A3
EP1861916A2European Patent Office (EPO)A2
US7306823B2United States of AmericaB2
WO2007065096A3World Intellectual Property Organization (WIPO)A3
US2008020503A1United States of AmericaA1
WO2007101135A3World Intellectual Property Organization (WIPO)A3
CN101128941AChinaA
WO2007101136A3World Intellectual Property Organization (WIPO)A3
JP2008514006AJapanA
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EP1935086A2European Patent Office (EPO)A2
US2008149176A1United States of AmericaA1
WO2007041533A9World Intellectual Property Organization (WIPO)A9
EP1949528A2European Patent Office (EPO)A2
JP2008529281AJapanA
EP1961047A2European Patent Office (EPO)A2
US2008213467A1United States of AmericaA1
CN101268608AChinaA
JP2008537640AJapanA
WO2008121997A2World Intellectual Property Organization (WIPO)A2
WO2007101138A3World Intellectual Property Organization (WIPO)A3
WO2008128122A2World Intellectual Property Organization (WIPO)A2
EP1992010A2European Patent Office (EPO)A2
EP1997149A2European Patent Office (EPO)A2
EP1997150A2European Patent Office (EPO)A2
WO2007106756A3World Intellectual Property Organization (WIPO)A3
EP1998902A2This recordEuropean Patent Office (EPO)A2
EP1999796A2European Patent Office (EPO)A2
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