EP1972016A4
The fabricating method of single electron transistor (set) by employing nano-lithographical technology in the semiconductor process
Abstract
This record has no abstract on file.
Term
Projected expiry 29 December 2026.
- Priority
- Filed
- Published
- Today
- Projected expiry
24 sheets
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Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| WO0219036A1 | Cites | World Intellectual Property Organization (WIPO) | Search report |
| DE102004051662B3 | Cites | Germany | Search report |
| BUEHLER T M ET AL: "A self-aligned fabrication process for silicon quantum computer devices", NANOTECHNOLOGY IOP PUBLISHING UK LNKD- DOI:10.1088/0957-4484/13/5/330, vol. 13, no. 5, October 2002 (2002-10-01), pages 686 - 690, XP002578734, ISSN: 0957-4484 | Non-patent | – | Search report |
27 members in 7 offices
Priority claims5
| Document | Office | Kind | Date |
|---|---|---|---|
| 754614P | United States of America | – | |
| 75461405 | United States of America | P | |
| 646383 | United States of America | – | |
| 64638306 | United States of America | A | |
| 2006049474 | United States of America | W |
Members27
| Document | Office | Kind | |
|---|---|---|---|
| TW200724480A | Taiwan Province of China | A | |
| TW200725883A | Taiwan Province of China | A | |
| US2007161238A1 | United States of America | A1 | |
| WO2007079174A2 | World Intellectual Property Organization (WIPO) | A2 | |
| US2007212836A1 | United States of America | A1 | |
| WO2007079174A3 | World Intellectual Property Organization (WIPO) | A3 | |
| WO2008002326A2 | World Intellectual Property Organization (WIPO) | A2 | |
| WO2008002326A3 | World Intellectual Property Organization (WIPO) | A3 | |
| KR20080083692A | Republic of Korea | A | |
| EP1972016A2 | European Patent Office (EPO) | A2 | |
| KR20080087022A | Republic of Korea | A | |
| EP1974369A2 | European Patent Office (EPO) | A2 | |
| CN101346829A | China | A | |
| CN101390193A | China | A | |
| JP2009522785A | Japan | A | |
| JP2009522788A | Japan | A | |
| TWI323516B | Taiwan Province of China | B | |
| EP1972016A4This record | European Patent Office (EPO) | A4 | |
| US7749784B2 | United States of America | B2 | |
| CN101346829B | China | B | |
| EP1974369A4 | European Patent Office (EPO) | A4 | |
| TWI336314B | Taiwan Province of China | B | |
| CN101390193B | China | B | |
| JP5052528B2 | Japan | B2 | |
| US8318520B2 | United States of America | B2 | |
| KR101287317B1 | Republic of Korea | B1 | |
| JP5372520B2 | Japan | B2 |
12 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| Intention to grant announcedINTG | INTG | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOSNIGR1GRAP | GRAP | |
| Request for extension of the european patent (deleted)DAX | DAX | |
| Supplementary search report drawn up and despatchedA4 | A4 | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1972016
- Application
- 68482702
Titles3
- German
- HERSTELLUNGSVERFAHREN FÜR EINEN EINZELELEKTRONENTRANSISTOR (SET) DURCH VERWENDUNG VON NANOLITHOGRAPHISCHER TECHNOLOGIE IM HALBLEITERPROZESS
- English
- THE FABRICATING METHOD OF SINGLE ELECTRON TRANSISTOR (SET) BY EMPLOYING NANO-LITHOGRAPHICAL TECHNOLOGY IN THE SEMICONDUCTOR PROCESS
- French
- PROCÉDÉ DE FABRICATION DE TRANSISTOR À SIMPLE ÉLECTRON (SET) A L'AIDE DE LA TECHNOLOGIE NANO-LITHOGRAPHIQUE DANS LE PROCESSUS SEMI-CONDUCTEUR
Classification
- CPC, 13
- C23C14/044
- H10D30/014
- B82Y10/00
- C23C14/042
- C23C14/225
- G03F7/40
- Y10S977/762
- Y10S438/962
- Y10S977/938
- Y10S977/774
- Y10S977/771
- B82Y40/00
- H10N80/01
- IPC, 3
- H01L47 00
- H01L29 06
- H10N80 00
Designated states31
- Contracting states, 31
- Austria
- Belgium
- Bulgaria
- Switzerland
- Cyprus
- Czechia
- Germany
- Denmark
- Estonia
- Spain
- Finland
- France
- United Kingdom
- Greece
- Hungary
- Ireland
- Iceland
- Italy
- Liechtenstein
- Lithuania
- Luxembourg
- Latvia
- Monaco
- Netherlands (Kingdom of the)
and 7 moreShow fewer
- Poland
- Portugal
- Romania
- Sweden
- Slovenia
- Slovakia
- Türkiye