EP1908122A4
Semiconductor structure and method of manufacturing a semiconductor structure
Abstract
This record has no abstract on file.
Term
Term ended
Projected expiry passed 20 June 2026, 0.3 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
3 sheets
Sheet 1 Sheet 2 Sheet 3
Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| JP2003092426A | Cites | Japan | Search report |
| US2003132448A1 | Cites | United States of America | Search report |
| US2005056850A1 | Cites | United States of America | Search report |
| See also references of WO 2007003684A1 | Non-patent | – | Search report |
22 members in 10 offices
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 20050707 | Finland | – | |
| 20050707 | Finland | A | |
| 2006000220 | Finland | W |
Members22
| Document | Office | Kind | |
|---|---|---|---|
| FI20050707A0 | Finland | A0 | |
| FI20050707A | Finland | A | |
| FI20050707L | Finland | L | |
| WO2007003684A1 | World Intellectual Property Organization (WIPO) | A1 | |
| TW200705657A | Taiwan Province of China | A | |
| FI118196B | Finland | B | |
| EP1908122A1 | European Patent Office (EPO) | A1 | |
| KR20080034441A | Republic of Korea | A | |
| CN101213676A | China | A | |
| JP2008545261A | Japan | A | |
| US2009127574A1 | United States of America | A1 | |
| HK1124172A1 | Hong Kong, China | A1 | |
| RU2008102874A | Russian Federation | A | |
| CN100568560C | China | C | |
| RU2391746C2 | Russian Federation | C2 | |
| US7763904B2 | United States of America | B2 | |
| US2010314662A1 | United States of America | A1 | |
| US8062913B2 | United States of America | B2 | |
| KR101238310B1 | Republic of Korea | B1 | |
| TWI390724B | Taiwan Province of China | B | |
| EP1908122A4This record | European Patent Office (EPO) | A4 | |
| JP5247439B2 | Japan | B2 |
10 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| Supplementary search report drawn up and despatchedA4 | A4 | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | |
| Request for extension of the european patent (deleted)DAX | DAX | |
| Request for examination filed (corrected)R17P | R17P | |
| Designated contracting states (corrected)RBV | RBV | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1908122
- Application
- 67644468
Titles3
- German
- HALBLEITERSTRUKTUR UND VERFAHREN ZUM HERSTELLEN EINER HALBLEITERSTRUKTUR
- English
- SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE
- French
- STRUCTURE SEMI-CONDUCTRICE ET PROCEDE DE FABRICATION
Classification
- CPC, 4
- H10H20/821
- H10H20/01335
- H10H20/819
- H10H20/825
- IPC, 2
- H01L33 24
- H01L33 00
Designated states31
- Contracting states, 31
- Austria
- Belgium
- Bulgaria
- Switzerland
- Cyprus
- Czechia
- Germany
- Denmark
- Estonia
- Spain
- Finland
- France
- United Kingdom
- Greece
- Hungary
- Ireland
- Iceland
- Italy
- Liechtenstein
- Lithuania
- Luxembourg
- Latvia
- Monaco
- Netherlands (Kingdom of the)
and 7 moreShow fewer
- Poland
- Portugal
- Romania
- Sweden
- Slovenia
- Slovakia
- Türkiye