Method and apparatus for power supply control

<u style="single">Technological Field of the Invention</u>

0001The present invention relates to a power supply control circuit, electronic apparatus, semiconductor device, control method for a power supply control circuit, and control method for an electronic apparatus, and more specifically relates to a power supply control circuit, electronic apparatus, semiconductor device, control method for a power supply control circuit, and control method for an electronic apparatus of the type in which electricity generated by a power generation apparatus is stored in a storage device.

<u style="single">Prior Art</u>

0002Conventionally known are power supply control circuits provided with an electronic clock that includes a power generation apparatus, wherein the electrical energy generated by the power generation apparatus is stored in a storage device via a so-called blocking diode (Patent References 1 to 3, for example). <ul id="ul0001" list-style="none"><li>[Prior Art 1] Japanese Laid-Open Patent Application No. 9-264971</li><li>[Prior Art 2] Japanese Laid-Open Patent Application No. 10-201128</li><li>[Prior Art 3] Japanese Laid-Open Patent Application No. 10-210681</li><li>[Prior Art 4] International Publication WO98/21815</li></ul>

<u style="single">Disclosure of the Invention</u>

<u style="single">Problems the Invention Is Intended to Solve</u>

0003However, when a solar battery is used as the power supply apparatus, the charging current characteristics of the solar battery include a characteristic whereby a fixed charging current flows until the stored voltage of the storage device reaches a prescribed voltage X(V), and the charging current stops flowing when the stored voltage reaches the prescribed voltage X(V).

0004In this case, when the configuration includes an ideal power supply control circuit in which a blocking diode is not used, the voltage X is equal to the charging voltage of the storage device. However, in an actual power supply control circuit that uses a blocking diode, the voltage X is equal to the sum of the charging voltage of the storage device and the forward voltage of the blocking diode, and there is a drawback in that charging current of the storage device charges in less than ideal conditions. In other words, the forward voltage of the blocking diode essentially appears as a charge loss.

0005In the particular case of charging a solar battery under low illumination, since the voltage X is reduced in comparison with high illumination, there is a drawback in that the ratio of charging loss is considerable.

0006When an attempt is made to install a blocking diode in a semiconductor device (LSI, for example), the impurities in the silicon substrate are commonly diffused to form a p-type diffusion layer and an n-type diffusion layer, and these are structured as a diode by a PN junction. However, since the diode formed by a PN junction on the silicon substrate has a considerable forward voltage, the charging loss increases and the charging efficiency is reduced.

0007Technology has been proposed (refer to patent reference 4) to solve the above-described problems, in which a field-effect transistor is connected to a blocking diode in parallel with the blocking diode, electrical energy generated by a power generation apparatus initially charges a storage device by way of the blocking diode, the field-effect transistor is switched ON and the blocking diode is bypassed when the forward voltage of the blocking diode is equal to or greater than a prescribed voltage, and the storage device is charged in a state of low charging loss.

0008No problems are encountered when a constant-voltage power generation apparatus such as an electromagnetic induction generation apparatus is used for the power generation apparatus to generate a charging current in correspondence with the difference in electrical potential between the power generation voltage of the power generation apparatus and the charging voltage of the storage device, but in the case that a constant-current power generation apparatus such as a solar battery is used, the blocking diode is shorted by the field-effect transistor and the forward voltage becomes zero when the forward voltage of the blocking diode is detected and the field-effect transistor is switched ON, causing the field-effect transistor to be switched OFF one more time.

0009When a constant-current power generation apparatus is therefore used as a power generation apparatus, problems are encountered in that the charging loss is not reduced because the storage device is charged as the field-effect transistor repeatedly switches ON and OFF.

0010When using a configuration in which the field-effect transistor is kept in the ON state for a prescribed length of time, electric current flows back from the storage device to the power supply apparatus when the power generation apparatus no longer produces electricity during that period of time, and a new problem arises in that power is wastefully consumed.

0011In view of the above, an object of the present invention is to provide a power supply control circuit having low charging loss and low-leak electric current regardless of the type of power supply apparatus, and to consequently provide a power supply control circuit in which the charging efficiency is improved in an electronic apparatus that has a power supply apparatus or a charging device, and in which the length of time that the system can operate is extended, and to further provide an electronic apparatus, a semiconductor device, a control method for a power supply control circuit, and a control method for the electronic apparatus.

<u style="single">Means Used to Solve the Above-Mentioned Problems</u>

0012In order to solve the above-described problems, the present invention provides a power supply control circuit interposed between a power supply apparatus and a storage device that stores power supplied by the power supply apparatus, for controlling the electric current that flows between the power supply apparatus and the storage device, the circuit comprising a charging current detector for detecting the charging current flowing from the power supply apparatus to the storage device; a blocking unit for cutting off the backflow current that flows from the storage device to the power supply apparatus, on the basis of inputted blocking control signal; and a backflow monitoring unit for monitoring by sampling for the presence of the charging current until the charging current is detected, constantly monitoring for the presence of the charging current after the charging current has been detected, and outputting a blocking control signal for cutting off the backflow current when the charging current is not flowing.

0013In accordance with the above-described configuration, the charging current detector detects the charging current that flows from the power supply apparatus to the storage device.

0014The backflow monitoring unit monitors by sampling for the presence of electric current on the basis of the detection results of the charging current detector until the charging current is detected, constantly monitors for the presence of a charging current after the charging current has been detected, and presents the blocking unit with a blocking control signal for cutting off the backflow current when the charging current is not flowing. As a result, the blocking unit cuts off backflow current that flows from the storage device to the power supply apparatus, on the basis of the inputted blocking control signal.

0015In this case, the charging current detector is provided with a first field-effect transistor in which either one of the drain and source terminals is connected to the gate terminal, and is directly or indirectly connected to one of the terminals of the storage device, and in which the other of the drain and source terminals is connected to one of the terminals of the power supply apparatus; and the blocking unit is provided with a second field-effect transistor in which either one of the drain and source terminals is connected to the other terminal of the power supply apparatus, and in which the other of the drain and source terminals is directly or indirectly connected to the other terminal of the storage device.

0016The second field-effect transistor may be configured to have a larger threshold value that the threshold value of the first field-effect transistor.

0017The first field-effect transistor may be formed from an intrinsic semiconductor, and the second field-effect transistor may be configured so that the threshold value is set by controlling the concentration of impurities in the substrate.

0018In the power supply control circuit, parasitic diodes in which the direction of flow of the charging current is the forward direction are provided in parallel with the first field-effect transistor and the second field-effect transistor.

0019The first and second field-effect transistors may be enhancement-type field-effect transistors.

0020The first field-effect transistor may be is a depletion-type field-effect transistor, and the second field-effect transistor may be an enhancement-type field-effect transistor.

0021The backflow monitoring unit may be provided with a comparator for detecting the difference in electrical potential generated between the drain and source terminals of the first field-effect transistor, and the comparator may be adapted to perform a sampling operation in a state in which there is a possibility that backflow current can flow, based on the difference in electrical potential, and to constantly operates in a state in which the charging current is flowing.

0022The resistance load element for stabilizing the electrical potential of one of the terminals of the power supply apparatus may also be connected in parallel with the first field-effect transistor.

0023A power generation apparatus may furthermore be connected as the power supply apparatus.

0024A constant-current power generation apparatus that can cause a substantially constant charging current to flow without dependence on storage voltage until the storage voltage of the storage device reaches a prescribed level under prescribed power generation conditions may moreover be connected as the power supply apparatus.

0025It is also possible that a switching element is provided for preventing overcharging of the storage device and allowing charging current fed from the power supply apparatus to flow to the power supply apparatus via the first field-effect transistor, wherein the backflow monitoring unit has a storage voltage detector for detecting the storage voltage of the storage device, and forcibly sets the second field-effect transistor in an OFF state, and thereafter sets the switching element in an ON state when the storage voltage of the storage device is equal to or greater than a prescribed reference voltage, and when the second field-effect transistor is forcibly set in the OFF state and the switching element is set in the ON state, the switching element is set in the OFF state and the forced OFF state of the second field-effect transistor is released when the storage voltage is less than the reference voltage.

0026The present invention also provides an electronic apparatus that has a storage device for storing power supplied by an external power supply apparatus, a controlled device driven by the stored power of the storage device, and a power supply control circuit interposed between the power supply apparatus and storage device, for controlling the electric current that flows between the power supply apparatus and the storage device, wherein the power supply control circuit includes a charging current detector for detecting charging current that flows from the power supply apparatus to the storage device; a blocking unit for cutting off backflow current that flows from the storage device to the power supply apparatus, on the basis of an inputted backflow control signal; and a backflow monitoring unit for monitoring by sampling for the presence of the charging current until the charging current is detected, constantly monitoring for the presence of the charging current after the charging current has been detected, and outputting a blocking control signal for cutting off the backflow current when the charging current is not flowing.

0027In accordance with the above configuration, the charging current detector of the power supply control circuit detects charging current that flows from an external power supply apparatus to the storage device.

0028The backflow monitoring unit monitors by sampling for the presence of the charging current until the charging current is detected, on the basis of the charging current detector; constantly monitors for the presence of the charging current after the charging current has been detected; and outputs to the blocking unit a blocking control signal for cutting off backflow current when the charging current is not flowing.

0029As a result, the blocking unit cuts off back flow current that flows from the storage device to the power supply apparatus, on the basis of the inputted backflow control signal.

0030The present invention also provides an electronic apparatus that has a power supply apparatus, a storage device for storing power supplied by the power supply apparatus, a controlled device driven by the stored power of the storage device, and a power supply control circuit interposed between the power supply apparatus and storage device, for controlling the electric current that flows between the power supply apparatus and the storage device, wherein the power supply control circuit includes a charging current detector for detecting charging current that flows from the power supply apparatus to the storage device; a blocking unit for cutting off backflow current that flows from the storage device to the power supply apparatus, on the basis of an inputted backflow control signal; and a backflow monitoring unit for monitoring by sampling for the presence of the charging current until the charging current is detected, constantly monitoring for the presence of the charging current after the charging current has been detected, and outputting a blocking control signal for cutting off the backflow current when the charging current is not flowing.

0031In accordance with the above configuration, the charging current detector of the power supply control circuit detects charging current that flows from the power supply apparatus to the storage device. The backflow monitoring unit monitors by sampling for the presence of the charging current until the charging current is detected, on the basis of the charging current detector; constantly monitors for the presence of the charging current after the charging current has been detected; and outputs to the blocking unit a blocking control signal for cutting off backflow current when the charging current is not flowing.

0032As a result, the blocking unit cuts off back flow current that flows from the storage device to the power supply apparatus, on the basis of the inputted backflow control signal.

0033In these cases, the controlled device may be configured as a microcomputer.

0034The microcomputer includes a central processing unit, and the control of the power supply control apparatus may be carried out independently from the control of the central processing unit.

0035The controlled device may furthermore be configured as a timing device having a timing function and a time display function.

0036The power supply apparatus may moreover be a power generation apparatus.

0037The present invention also provides a semiconductor device that includes a terminal to which a power supply apparatus is connected, a terminal to which the storage device is connected, a terminal to which a controlled device driven with the stored power of the storage device is connected, and any power supply control circuit of those described above.

0038The present invention provides a control method for a power supply control circuit that includes a charging current detection step for detecting charging current that flows from the power supply apparatus to the storage device, a monitoring step for monitoring by sampling for the presence of the charging current until the charging current is detected, and constantly monitoring for the presence of charging current after the charging current has been detected, and a blocking step for cutting off backflow current when the charging current is not flowing.

0039The present invention provides a control method for an electronic apparatus which houses a power supply apparatus or to which an external power supply apparatus can be connected, comprising a storage device that is charged by the power supply apparatus, a controlled device driven with the stored power of the storage device, and a power supply control circuit interposed between the power supply apparatus and storage device, for controlling the electric current that flows between the power supply apparatus and the storage device, the method including a charging current detection step for detecting charging current that flows from the power supply apparatus to the storage device; a monitoring step for monitoring by sampling for the presence of the charging current until the charging current is detected, and constantly monitoring for the presence of charging current after the charging current has been detected; and a blocking step for cutting off backflow current when the charging current is not flowing.

<u style="single">Effects of the Invention</u>

0040In accordance with the present invention, there is provided a power supply control circuit with a low charging loss and low leak electric current regardless of the type of power supply apparatus; hence, the charging efficiency is improved in an electronic apparatus that has a power supply apparatus or a charging device, and the length of time that the system can operate can be extended.

<u style="single">Brief Description of the Drawings</u>

0041<dl id="dl0001"><dt>Figure 1</dt><dd>shows a schematic diagram of the basic structure of the present invention.</dd><dt>Figure 2</dt><dd>shows a schematic block diagram of an electronic apparatus of a concrete embodiment.</dd><dt>Figure 3</dt><dd>shows a schematic block diagram of the power supply controller 26.</dd><dt>Figure 4</dt><dd>shows a descriptive diagram of the forward voltage-forward current characteristics of a device having a charging current detection transistor and the same function.</dd><dt>Figure 5</dt><dd>shows an operation flowchart (part 1) of the case in which charging current flows from the power supply apparatus to the storage device.</dd><dt>Figure 6</dt><dd>shows an operation flowchart (part 2) of the case in·which charging current flows from the power supply apparatus to the storage device.</dd></dl><dl id="dl0002" compact="compact"><dt>Figure 7</dt><dd>shows an operation flowchart of the case in which power generation has ended and there is a possibility that backflow current will flow from the storage device toward the power generation apparatus.</dd></dl>

<u style="single">Best Mode for Carrying Out the Invention</u>

0042An advantageous embodiment of the present invention is described below with reference to the diagrams.

0043First, the basic principles of the present invention are described prior to a detailed description thereof.

0044FIG. 1 is a schematic diagram of the basic structure of the present invention.

0045A power supply control circuit 10 is interposed between a power supply apparatus 11 and a storage device 12 that is charged by the power supply apparatus 11.

0046In this case, the power supply control circuit 10 is roughly composed of a charging current detector 13, a backflow monitoring unit 14, and blocking unit 15.

0047The charging current detector 13 detects charging current IC flowing from the power supply apparatus 11 to the storage device 12, and allows charging current IC to flow to the storage device 12.

0048The backflow monitoring unit 14 monitors by sampling for the presence of charging current IC until charging current IC is detected via the charging current detector 13, constantly monitors for the presence of charging current IC once the charging current IC is detected via the charging current detector 13, and outputs a blocking control signal SH for cutting off backflow current IR that flows from the storage device 12 to the power supply apparatus 11 when charging current IC is not flowing.

0049The blocking unit 15 cuts off backflow current IR that flows from the storage device 12 to the power supply apparatus 11 on the basis of the inputted blocking control signal SH.

0050In accordance with the above-described configuration, the backflow monitoring unit 14 monitors by sampling for the presence of charging current IC until charging current IC is detected via the charging current detector 13.

0051When the charging current IC is thereafter detected via the charging current detector 13, the backflow monitoring unit 14 constantly monitors the charging current IC, and when the charging current IC is not flowing, a blocking control signal SH is output to the blocking unit 15 for cutting off backflow current IR that flows from the storage device 12 to the power supply apparatus 11.

0052As a result, the blocking unit 15 cuts off the backflow current IR that flows from the storage device 12 to the power supply apparatus 11, on the basis of the inputted blocking control signal SH.

0053As described above, in accordance with the power supply control circuit 10, the backflow monitoring unit 14 can ensure lower power consumption needed for monitoring because the presence of charging current IC is monitored by sampling until charging current IC is detected via the charging current detector 13.

0054The backflow monitoring unit 14 constantly monitors the presence of charging current IC when charging current IC is detected via the charging current detector 13, and when electricity is not being generated in the power supply apparatus 11 or when the power generating voltage is lower than the charging voltage of the storage device 12, backflow current IR can be rapidly and reliably cut off under conditions in which there is a possibility that backflow current IR that flows from the storage device 12 to the power supply apparatus 11 will be generated. In this case, power consumption increases in comparison with the case in which the charging current IC is monitored by sampling, but the increase in the power consumption is not a problem because the storage device 12 is being charged.

0055Following is a description of a more concrete embodiment.

0056FIG. 2 is a schematic block diagram of the electronic apparatus of the concrete embodiment.

0057In FIG. 2, an electronic clock that displays time is used as an example of the electronic apparatus.

0058The electronic clock 20 is composed of a power generation apparatus 21 as a power supply apparatus that is configured as a solar battery in which a plurality of cells 21A are connected in series and are made to receive sunlight to generate electricity; a storage device 22 that stores power produced (electrical generation) by the power generation apparatus 21; a microcomputer 23 that is connected to the power generation apparatus 21 by way of power source terminals SLRA and SLRC, that is connected to the storage device 22 by way of a lower-potential power source terminal TVSS and a charge terminal TVTKP, and that controls charging and time display; a time display apparatus 24 that display time under the control of the microcomputer; and an auxiliary capacitor 25 that is connected to the microcomputer 23 via a higher-potential power source terminal TVDD and the lower-potential power source terminal TVSS, and that functions as a auxiliary power source of the storage device 22 when the time display apparatus 24 operating under a heavy load.

0059In this case, the microcomputer 23 is composed of a power supply controller 26 that is connected to the storage device 22 via the lower-potential power source terminal TVSS and the charge terminal TVTKP, that feeds charging current from the power generation apparatus 21 to the storage device 22, and that prevents backflow current that flows from the storage device 22 to the power generation apparatus 21; and a controller 27 that operates independent of the power supply controller 26 and controls the entire electronic clock 20.

0060The controller 27 has a constant voltage circuit 31 to which operating voltage is fed via the higher-potential power source terminal TVDD and lower-potential power source terminal TVSS, and which feeds constant voltage VREG1 or constant voltage VREG2 to the components of the controller 27; an oscillation circuit 32 to which constant voltage VREG1 is fed, which is provided with a liquid crystal oscillator or the like (not shown), and which outputs a reference oscillation signal fREF having a prescribed frequency (32 kHz, for example); a divider circuit 33 to which the constant voltage VREG2 and the reference oscillation signal fREF are fed, which divides the reference oscillation signal fREF, and which outputs divided signals fD (only one is shown in FIG. 2 for diagramming simplicity) having various frequencies; an MPU 34 to which constant voltage VREG2 is fed and which is provided with ROM, RAM, CPU (not shown) that control the entire controller 27; and a function logic unit 35 to which constant voltage VREG2 and divided signals fD are fed and which controls the time display in the time display apparatus 24 while operating in coordination with the MPU to control the oscillation circuit 32 and divider circuit 33.

0061Following is a description of the configuration of the power supply controller 26.

0062FIG. 3 is a schematic block diagram of the power supply controller 26. In FIG. 3, the same symbols are assigned to the same components of FIG. 2.

0063The power supply controller 26 is roughly composed of a charging current detection transistor 41 that functions as a charging current detector, a diode (parasitic diode) 42 and pull-up resistance 43 that are connected in parallel to the charging current detection transistor 41, a quick start unit 44 for implementing the hereinafter-described quick start function, an excess charge prevention transistor 45 for preventing excess charging in the storage device 22, a comparator unit 46 and operation controller 47 that constitute the backflow monitoring unit, a charging current transistor 48 that functions as a blocking unit, and a diode (parasitic diode) 49 connected in parallel to the charging current transistor 48. It should be noted that a voltage-increasing/decreasing circuit 50 that increases or decreases the storage voltage VTKP of the storage device 22 may also be provided as necessary.

0064The components of the power supply controller 26 are described in detail below.

0065The charging current detection transistor 41 is composed of a p-channel MOSFET, and is preferably large and has a low threshold voltage so that a considerable electric potential VDS (which causes charging loss) is not generated between the drain and source. In view of the above, a p-channel MOSFET is adopted in the present embodiment with a configuration in which the concentration of impurities of the base substrate is low and impurities are not required to be implanted to reduce the threshold voltage. An intrinsic semiconductor is defined as a semiconductor that does not require a special step for reducing the threshold voltage in such a manner. Even if a substrate that inherently has a fairly high degree of impurity concentration is used, it is possible to reduce the threshold voltage by implanting impurities in the substrate or making the oxide film thinner, but a dedicated semiconductor manufacturing step is required, resulting in higher costs. A substrate that inherently has a fairly high degree of impurity concentration is used during mass production as well in order to prevent an increase in the nonuniformity of the threshold voltage, that is, an increase in the nonuniformity of charging loss through mass production caused by an increase in the nonuniformity of the impurity concentration, nonuniformity of implanting impurities, nonuniformity in the thickness of the oxide layer, and other factors.

0066FIG. 4 is a descriptive diagram of the forward voltage-forward current characteristics of a device having a charging current detection transistor 41 and the same function. FIG. 4 shows the voltage VDS between the drain terminal D and source terminal S of the charging current detection transistor 41, the voltage VFsi between the anode and cathode of a conventional silicon diode, and the voltage VFsb between the anode and cathode of a Schottky-barrier diode, when electric current with a value of IF0 flows as the charging current IC.

0067In comparison with the voltage VFsi between the anode and cathode of a conventional silicon diode, and the voltage VDsb between the anode and cathode of a Schottky-barrier diode, the voltage VDS between the drain terminal D and source terminal S of the charging current detection transistor 41 has a forward voltage of about 30 to 60%, and it is apparent that the charging loss is significantly lower. Since the charging current detection transistor 41 is adapted to have a low charging loss, it can always be inserted in the charging current pathway of the storage device 22 without providing a structure (bypass circuit or the like) for bypassing the charging current detection transistor. The voltage VDS between the drain and source can be stably detected when charging current or backflow current flows without dependence on the type of power generation apparatus (constant-voltage power generation apparatus, constant-current power generation apparatus, and other power generation apparatuses).

0068The quick start unit 44 is composed of a first quick start diode 51 in which the anode terminal is connected to the drain terminal D of the charging current detection transistor 41; a second quick start diode 52 that is connected in series to the first quick start diode 51; a first quick start transistor 53 composed of a p-channel MOSFET, in which the source terminal S is connected to the drain terminal D of the charging current detection transistor 41, the drain terminal D is connected at a connection point midway between the first quick start diode 51 and second quick start diode 52, and the gate terminal G is connected to the operation controller 47; and a second quick start transistor 54 composed of a p-channel MOSFET, in which the source terminal S is connected to the drain terminal D of the charging current detection transistor 41, the drain terminal D is connected to the cathode terminal of the second quick start diode 52, and the gate terminal G is connected to the operation controller 47.

0069Here, the quick start function increases the voltage of the higher-potential power source VDD until the microcomputer 23 is in a an operable voltage range by adding the charging voltage of the storage device 22 to the forward voltage obtained by allowing charging current IC from the power generation apparatus 21 to flow to the quick start diodes 51 and 52 to generate voltage in the quick start diodes 51 and 52, even if the stored voltage of the storage device 22 has discharged to a low voltage range in which the microcomputer 23 cannot operate.

0070More specifically, the quick start control transistors 53 and 54 are switched ON or OFF by the first quick start control signal SC and the second quick start control signal SD generated by the operation controller 47 to allow the quick start function to be active.

0071In this case, the reason for providing a separate bypass for each of the two quick start diodes 51 and 52 by using the quick start control transistors 53 and 54 is that the voltage does not rise to the operable voltage range of the microcomputer 23 even if the charging voltage of one of the quick start diodes is added to the stored voltage of the storage device 22, and when the quick start function is cancelled in a state in which the forward voltage generated by the two quick start diodes 51 and 52 has been added by the quick start function to the charged voltage of the storage device 22, the voltage of the higher-potential power source VDD applied to the microcomputer 23 falls precipitously, and the microcomputer 23 may malfunction when both of the quick start diodes 51 and 52 are bypassed at the same time. The configuration is therefore designed so that when the quick start function is cancelled, the first quick start diode 51 is first bypassed, and the second quick start diode 52 is then bypassed.

0072The excess charge prevention transistor 45 is composed of a p-channel MOSFET in which the source terminal S is connected to the drain terminal D of the charging current detection transistor 41, the drain terminal D is connected to the power generation apparatus 21 via the power source terminal SLRC, and the gate terminal G is connected to the operation controller 47.

0073The comparator unit 46 is composed of a comparator 61 in which the inverting terminal (-) is connected (input as reference voltage signal SB) to the higher-potential power source VDD as the reference voltage power source via the higher-potential power source terminal TVDD, the non-inverting terminal (+) is connected (input as power generation voltage signal SA) to the power source terminal SLRA, and the enable terminal EN is connected to the operation controller 47; and an AND circuit 62 in which the output terminal of the comparator 61 is connected to one of the input terminals, the operation controller 47 is connected to the other input terminal, the forced-cutoff signal SF is input from the operation controller 47, and the blocking control signal SH is output therefrom.

0074The operation controller 47 is composed of a comparator 71 in which the reference voltage VREF is input to the inverting terminal (-), the non-inverting terminal (+) is connected to the charge terminal TVTKP, and the storage voltage signal SJ that corresponds to the storage voltage of the storage device 22 is input thereto; and a logic circuit 72 in which the clock signal SN is input from the divider circuit 33, the blocking control signal SH is input from the AND circuit 62, the charging voltage detection result signal SI is input from the comparator 71, and the first quick start control signal SC, second quick start control signal SD, excess charge prevention control signal SE, forced-cutoff signal SF, enable signal SL, and sampling timing signal SM are output therefrom.

0075The charging current transistor 48 is composed of an n-channel MOS transistor in which the drain terminal D is connected to the power source terminal SLRC, the source terminal S is connected to the lower-potential power source terminal TVSS, the gate terminal G is connected to the output terminal of the AND circuit 62, and the blocking control signal SH is input to the gate terminal G. The charging current transistor 48 is set with a high threshold voltage, and when the power generation apparatus 21 is generating power, the charging loss is negligible because the voltage VDS between the drain and source is substantially zero since the transistor is configured to be ON when unsaturated.

0076The reasons for providing a charging current transistor 48 are described below. The charging current detection transistor 41 reduces the threshold voltage, which is designed to reduce the voltage VDS between the drain and source (which is the cause of charging loss). The leak electric current flows as a backflow current when the power generation apparatus 21 is not generating power. Therefore, in the present embodiment, the charging current transistor 48 is provided for cutting off the leak current. Since the threshold voltage of the charging current transistor 48 is furthermore set higher than that of the charging current detection transistor 41, backflow current can be reliably cut off because the leak electric current is small value of about several nanoamperes.

0077The operation is more specifically described below. Described first is operation in the case in which charging current is flowing from the power generation apparatus 21 to the storage device 22.

0078FIG. 5 is an operation flowchart (part 1) of the case in which charging current flows from the power supply apparatus to the storage device. FIG. 6 is an operation flowchart (part 2) of the case in which charging current flows from the power supply apparatus to the storage device.

0079In the initial state, the microcomputer 23 is in an operation-halt state, and the storage voltage of the storage device 22 is lower than the operable voltage of the microcomputer 23.

0080In this state, the charging voltage detection result signal SI is at a low (L) level. The first quick start control signal SC and the second quick start control signal SD of the operation controller 47 are at a high (H) level. In other words, the quick start transistors 53 and 54 are both in an OFF state. The charging current transistor 48 and the excess charge prevention transistor 45 are also in an OFF state (Step S1).

0081As a result, the two quick start diodes 51 and 52 are connected in series to the storage device 22.

0082When power is generated (Step S2) in the power generation apparatus 21 in this state, a high-potential voltage is generated at the source terminal S with the voltage of the higher-potential power source VDD serving as the reference voltage because electric current from power generation flows from the power generation apparatus 21 to the source terminal S of the charging current detection transistor 41, the voltage of the higher-potential power source VDD is applied to the gate terminal G, and the voltage of the higher-potential power source VDD is also applied in the same manner to the drain terminal D. Since an electrical potential is generated between the gate and source (equivalent to the electrical potential VDS between the drain and source), the charging current detection transistor 41 is switched ON (Step S3).

0083Therefore, the quick start function is started (Step S4), the forward voltage of the two quick start diodes 51 and 52 is superimposed on the corresponding storage voltage of the storage device 22, and the microcomputer 23 (controller 27, in essence) is started.

0084In this state, a determination is made whether the sampling timing signal SM from the logic circuit 72 of the operation controller 47 has been input to the enable terminal EN of the comparator 61 of the comparator unit 46 (Step S5), and when the sampling timing signal SM has not been input to the enable terminal EN of the comparator 61 of the comparator unit 46 ("No," in Step S5), the OFF state of the charging current transistor 48 is maintained (Step S6).

0085Conversely, when the sampling timing signal SM has been input to the enable terminal EN of the comparator 61 of the comparator unit 46 ("Yes," in Step S5), the comparator 61. makes a determination whether the voltage of the power generation voltage signal SA is equal to or greater (SLRA ≥ VDD + α) than the voltage obtained by adding the voltage VDS between the drain and source of the charging current detection transistor 41 to the voltage of the higher-potential power source VDD (Step S7).

0086The comparator 61 is configured such that the input signal SA is connected to one end of a solar battery (which is the power generation apparatus 21), and the reference voltage signal SB is the voltage of the higher-potential power source VDD. Therefore, when the charging current IC is flowing, the voltage is made to correspond to the voltage VDS generated between the drain and source of the charging current detection transistor 41, and the detected voltage is equal to the voltage obtained by summing the voltage of the higher-potential power source VDD and the voltage VDS (= α) between the drain and source of the charging current detection transistor 41.

0087When power is not being generated in the power generation apparatus 21 and charging current IC is not flowing, the voltage of the power generation voltage signal SA is pulled up to the voltage of the higher-potential power source VDD by the pull-up resistance 43, and since a voltage difference with the reference voltage signal SB is not produced, charging current is not detected ("No," in Step S7). The charging current transistor 48 is therefore kept in an OFF state (Step S6). In this case, the pull-up resistance 43 functions to cut off the backflow current and to prevent situations in which the electrical potential of the power source terminal SLRA is unstable and the charging current non-detect state can no longer be stably detected in the comparator 61.

0088In this situation, the comparator 61 is enabled at each prescribed sampling timing cycle by the sampling timing signal SM from the logic circuit 72. The power consumption of the comparator 61 can be thereby inhibited, making it possible to ensure lower power consumption.

0089In the above-described sample timing, the comparator unit 46 compares the voltage (equivalent to the voltage of the higher-potential power source VDD) of the reference voltage signal SB and the voltage of the power generation voltage signal SA. When the voltage of the power generation voltage signal SA is equal to or greater than (SLRA ≥ VDD + α)) the voltage obtained by adding the voltage VDS between the drain and source of the charging current detection transistor 41 to the voltage of the higher-potential power source VDD, it is determined that charging current has been detected ("Yes," in Step S7), and the output signal thereof is set to a high level.

0090Since the forced-cutoff signal SF at this time is at a high level, the blocking control signal SH output from the AND circuit 62 is also at a high level. The charging current transistor 48 is switched ON (Step S8), and the charging current IC flows in the following order: power source terminal SLRA, charging current detection transistor 41, first quick start diode 51, second quick start diode 52, storage device 22, charging current transistor 48, and power source terminal SLRC.

0091The blocking control signal SH output at a high level from the AND circuit 62 is output to the logic circuit 72 as well.

0092The logic circuit 72 thereby constantly enables the sampling timing signal SM indicating that charging current has been detected, and the comparator 61 constantly operates (Step S9) .

0093This is due to the fact that when the state changes from charging current detection to charging current non-detection, the charging current transistor 48 is immediately switched OFF, and the backflow current IR is rapidly and reliably prevented from flowing from the storage device 22 to the power generation apparatus 21.

0094In an excess charging prevention state, the forced-cutoff signal SF is at a low level, a charging current non-detection state is forcibly established, and a blocking control signal SH is output in order to forcibly switch ON the charging current transistor 48. As a result, in an excess charging prevention state, electric current flows via the excess charge prevention transistor 45 and charging current transistor 48, and the storage device 22 can be prevented from shorting.

0095The logic circuit 72 outputs an enable signal SL to the comparator 71 when a prescribed enable timing is reached ("Yes," in Step S10), and the comparator 71 compares (Step S11) the reference voltage VREF and the voltage of the storage voltage signal SJ corresponding to the stored voltage of the storage device 22 (in essence, the quick start control voltage VQ obtained by dividing the storage voltage signal SJ in a first prescribed ratio). When the quick start control voltage VQ is equal to or greater than the reference voltage VREF, the charging voltage detection result signal SI is set to a high level.

0096The logic circuit 72 thereby sets the first quick start control signal SC to a low level. As a result, the first quick start control transistor 53 is switched ON (Step S12), and the first quick start diode 51 is bypassed.

0097In other words, the charging current IC flows in the following order: power source terminal SLRA, charging current detection transistor 41, first quick start transistor 53, second quick start diode 52, storage device 22, charging current transistor 48, and power source terminal SLRC.

0098The logic circuit 72 thereafter outputs a prescribed enable signal SL to the comparator 71 ("Yes," in Step S13), the comparator 71 compares the reference voltage VREF and the quick start control voltage VQ (Step S14), and when the quick start control voltage VQ is less than the reference voltage VREF ("No," in Step S14), the logic circuit 72 again sets the first quick start control signal SC to a high level, and the routine jumps to Step S10 again. As a result, the first quick start control transistor 53 and second quick start control transistor 54 are switched OFF (Step S15).

0099In the determination of Step S14, when the quick start control voltage VQ is equal or greater than the reference voltage VREF ("Yes," in Step S14), the charging voltage detection result signal SI is set to a high level.

0100The logic circuit 72 thereby sets the first quick start control signal SC and second quick start control signal SD to a low level. As a result, the first quick start control transistor 53 and second quick start control transistor 54 are switched ON (Step S16), and the first quick start diode 51 and second quick start diode 52 are bypassed.

0101More specifically, the quick start function is cancelled (Step S17), and the charging current IC flows in the following order: power source terminal SLRA, charging current detection transistor 41, first quick start transistor 53, second quick start control transistor 54, storage device 22, charging current transistor 48, and power source terminal SLRC.

0102The charging current transistor 48 is switched ON at this time, and the excess charge prevention transistor 45 is kept OFF (Step S18). When prescribed enable timing thereafter arrives ("Yes," in Step S19), the logic circuit 72 outputs an enable signal SL to the comparator 71, and the comparator 71 compares the reference voltage VREF and the voltage of the storage voltage signal SJ corresponding to the stored voltage of the storage device 22 (in essence, the excess charging prevention voltage VL obtained by dividing the storage voltage signal SJ in a second prescribed ratio) (Step 20). When the excess charging prevention voltage VL is equal to or greater than the reference voltage VREF ("Yes," in Step S20), the charging voltage detection result signal SI is set to a high level.

0103As a result, the logic circuit 72 sets the forced-cutoff signal SF to a low level and sets the blocking control signal SH (which is the output of the AND circuit 62) to a low level, further resulting in the charging current transistor 48 being forcibly switched OFF (Step S21).

0104The logic circuit 72 thereafter sets the excess charge prevention control signal SE to a low level, and the excess charge prevention transistor 45 is thereby switched ON (Step S22).

0105More specifically, the system enters an excess charging prevention state (Step S23); the charging current IC flows in the following order: power source terminal SLRA, charging current detection transistor 41, excess charge prevention transistor 45, and power source terminal SLRC; and excess charging of the storage device 22 is prevented.

0106When a prescribed enable timing arrives ("Yes," in Step S24), the logic circuit 72 thereafter again outputs an enable signal SL to the comparator 71, and the comparator 71 compares (Step S25) the reference voltage VREF and the voltage of the storage voltage signal SJ corresponding to the stored voltage of the storage device 22 (in essence, the excess charging prevention voltage VL obtained by dividing the storage voltage signal SJ in a second prescribed ratio). When the excess charging prevention voltage VL is equal to or greater than the reference voltage VREF ("No," in Step S25), the charging voltage detection result signal SI is set to a high level and the excess charging prevention state is maintained.

0107However, when the excess charging prevention voltage VL is less than the reference voltage VREF ("Yes," in Step S25), the comparator 71 sets the charging voltage detection result signal SI to a low level, and the logic circuit 72 thereby sets the excess charge prevention control signal SE to a high level. The excess charge prevention transistor 45 is thereby switched OFF (Step S26).

0108The logic circuit 72 thereafter sets the forced-cutoff signal SF to a high level, and sets the blocking control signal SH (which is the output of the AND circuit 62) to a high level. The forced OFF state of the charging current transistor 48 is therefore cancelled (Step S27).

0109The excess charging prevention state is also canceled (Step S28), and the charging current transistor 48 is thereafter switched ON or OFF in accordance with the presence of charging current IC; that is to say, in accordance with the level of the output signal of the comparator 61. In this case, the reason that the excess charge prevention transistor 45 and charging current transistor 48 are switched ON or OFF in a stepwise fashion in accordance with excess charging prevention control is that back flow current flows from the storage device 22 to both the transistors 45 and 48 when both transistors 45 and 48 are switched ON, inducing a reduction in charging efficiency.

0110Described next is operation in the case in which power generation in the power generation apparatus 21 ends, and there is a possibility that backflow current will flow from the storage device 22 to the power generation apparatus 21.

0111Fig. 7 is an operation flowchart of the case in which power generation has ended and there is a possibility that backflow current will flow from the storage device toward the power generation apparatus.

0112In a state in which the power generation apparatus 21 generates power and charging current IC is flowing, the first quick start transistor 53 and second quick start transistor 54 are both switched ON, the charging current transistor 48 is switched ON, and the excess charge prevention transistor 45 is switched OFF (Step S31).

0113In this case, since charging current IC is flowing, the sampling timing signal SM constantly enables the comparator 61 of the comparator unit 46 (Step S32). When the power generation apparatus 21 thereafter ends power generation (Step S33), the voltage between the drain and source of the charging current detection transistor 41 becomes equal to the voltage of the higher-potential power source VDD via the pull-up resistance 43, and the charging current detection transistor 41 is switched OFF (Step S34).

0114In this state, the backflow current IR flows in the following pathway: storage device, second quick start transistor 54, pull-up resistance 43, power source terminal SLRA, power generation apparatus 21, power source terminal SLRC, and charging current transistor 48.

0115At this point, the comparator 61 of the comparator unit 46 compares the voltage of the reference voltage signal SB (equivalent to the voltage of the higher-potential power source VDD) and the power generation voltage signal SA (Step S35), and since the voltage of the power generation voltage signal SA is less than the voltage obtained by adding the voltage VDS between the drain and source of the charging current detection transistor 41 to the voltage of the higher-potential power source VDD, the charging current is not detected and the output signal is set to a low level.

0116As a result, the blocking control signal SH (which is the output of the AND circuit 62) is set to a low level. The forced OFF state of the charging current transistor 48 is therefore cancelled (Step S36).

0117A further result is that the backflow current IR is completely cut off, and the power source terminal SLRA is pulled up to the voltage of the higher-potential power source VDD by the pull-up resistance 43 (Step S37). Since the blocking control signal SH has been set to a low level, the logic circuit 72 detects that charging current is not flowing, cancels the constantly enabled state of the comparator 61, and changes the sampling timing signal SM so that the comparator 61 becomes enabled at each prescribed sampling timing cycle (Step S38).

0118At the point in time that the sampling timing signal SM enables the comparator 61 (Step S39), the AND circuit 62 continues to output a blocking control signal SH at a low level as long as the power generation voltage signal SA (which is the voltage of the power source terminal SLRA) is still less than the voltage obtained by adding the voltage VDS between the drain and source of the charging current detection transistor 41 to the voltage of the higher-potential power source VDD, and the blocking state will be continued (Step S41).

0119As described above, in accordance with the present embodiment, the charging loss and leak current of the power supply control circuit can be considerably reduced. As a result, the charging efficiency of a power generation apparatus or an electronic apparatus provided with a power generation apparatus can be improved, and the drivable length of time of the electronic apparatus can be extended.

0120In the description above, two quick start diodes are connected in series and operated until just prior to quick start cancellation. The first quick start diode is bypassed and the second quick start diode is bypassed in sequence in a quick start-cancelled state, but it is also possible to provide a configuration in which the first quick start diode is bypassed and the second quick start diode is bypassed in sequence in accordance with the voltage of the higher-potential power source VDD or the charging current of the storage device in a quick start state in order to improve the charging efficiency in the quick start state.

0121In the description above, the type of MOSFET constituting the charging current detection transistor 41 and the type of MOSFET constituting the charging current transistor 48 were described in detail, but a configuration may be used in which both of the MOSFETs may be enhancement-type field-effect transistors, or the MOSFET constituting the charging current detection transistor 41 may be a depletion-type field-effect transistor, and the MOSFET constituting the charging current transistor 48 may be an enhancement-type field-effect transistor.

0122In the description above, the electronic apparatus was provided with both a power generation apparatus and a storage device as power supply apparatuses, but application can also be made to an electronic apparatus provided solely with a storage device as long as an external power supply apparatus (power generation apparatus) can be connected.

0123In the description above, a plurality of components were used in combination as the power supply controller 26, but also possible is an integrated configuration in which a semiconductor integrated circuit (semiconductor device) is used. The power supply controller 26 and controller 27 were described as separate units, but also possible is a semiconductor integrated circuit (LSI circuit, for example) configuration in which the components are integrally formed on a semiconductor substrate.

0124In the description above, control was implemented with a logic circuit configuration, but control programs may also be stored in an EEPROM or other memory to perform control routines with a microcomputer. In this case, it is also possible to store control programs in advance on any type of magnetic disk, optical disk, memory card, or other recording medium, and to read and install the programs from the recording medium. Also possible is a configuration in which a communication interface is provided, control programs are downloaded via the Internet, a LAN, or another network, and the programs are installed and executed.

0125Described above is the case in which the MPU 34 of the controller 27 operates in a normal fashion, but control of the power supply controller 26 is preferably made entirely independent from the control of the controller 27, even when the stored voltage of the storage device 22 is low and the MPU 34 has malfunctioned. Adopting such a configuration makes it possible to prevent situations in which a malfunction of the MPU 32 causes backflow current to accidentally flow from the storage device 22 to the power generation apparatus 21, excess charging to be prevented, and the storage device 22 to not be able to be charged by the power generation apparatus 21.

0126In the description above, the charging current detection transistor 41 is composed of a p-channel.MOSFET and the charging current transistor 48 is composed of an n-channel MOSFET, but it is also possible to change the logic such that the charging current detection transistor 41 is composed of an n-channel MOSFET and the charging current transistor 48 is composed of a p-channel MOSFET. The same applies to other transistors.

0127In the description above, a p-channel MOSFET with a low threshold is used as the charging current detection transistor 41, but since a blocking unit is provided in which a charging current transistor 48 is used that can reliably prevent backflow current, it is possible to replace the charging current detection transistor 41 with an internally or externally mounted Schottky-barrier diode or other diode that normally cannot be adopted because of its low forward voltage but a considerable leak electric current.

0128Described above is the case in which a solar battery is used as the power supply apparatus (power generation apparatus), but also possible are configurations in which are used an electromagnetic power generation apparatus or another electromagnetic induction power generation apparatus that converts kinetic energy (rotational kinetic energy of a oscillating weight, for example) into electrical energy, a thermoelectric power generation apparatus that converts thermal energy (thermal energy originating from the difference in body temperature and the surrounding air temperature, for example) into electrical energy, a piezoelectric effect power generation apparatus that generates power by using the piezoelectric effect through the application of vibrations or displacement produced externally or by self-excitation, or an electromagnetic induction power generator that receives broadcast, communication radio waves, or other freely propagating electromagnetic waves, and makes use of the energy thereof (corresponding to a first energy).

0129Described above is the case in which a power supply apparatus is used as the power generation apparatus, but any apparatus that supplies power may be applied, even if the system does not have a power generation function such as a power adapter or a charging station for a mobile phone or the like.

<u style="single">List of reference numerals</u>

0130<dl id="dl0003" compact="compact"><dt>10:</dt><dd>power supply control circuit,</dd><dt>11:</dt><dd>power supply apparatus (power generation apparatus, power source adapter, or the like),</dd><dt>12:</dt><dd>storage device,</dd><dt>13:</dt><dd>charge current detector,</dd><dt>14:</dt><dd>backflow monitoring unit,</dd><dt>15:</dt><dd>blocking unit,</dd><dt>20:</dt><dd>electronic clock,</dd><dt>21:</dt><dd>power generation apparatus,</dd><dt>22:</dt><dd>storage device,</dd><dt>23:</dt><dd>microcomputer,</dd><dt>24:</dt><dd>time display apparatus,</dd><dt>25:</dt><dd>auxiliary capacitor,</dd><dt>26:</dt><dd>power supply controller (power supply control circuit),</dd><dt>27:</dt><dd>controller,</dd><dt>31:</dt><dd>constant voltage circuit,</dd><dt>32:</dt><dd>oscillation circuit,</dd><dt>33:</dt><dd>divider circuit,</dd><dt>34:</dt><dd>MPU,</dd><dt>35:</dt><dd>function logic unit,</dd><dt>41:</dt><dd>charging current detection transistor (first field-effect transistor),</dd><dt>42:</dt><dd>diode (parasitic diode),</dd><dt>43:</dt><dd>pull-up resistance,</dd><dt>44:</dt><dd>quick start unit,</dd><dt>45:</dt><dd>excess charge prevention transistor,</dd><dt>46:</dt><dd>comparator unit,</dd><dt>47:</dt><dd>operation controller,</dd><dt>48:</dt><dd>charging current transistor (second field-effect transistor),</dd><dt>49:</dt><dd>diode (parasitic diode)</dd></dl>

<u style="single">Figure legends</u>

0131<ul id="ul0002" list-style="none" compact="compact"><li>FIG. 1 <dl id="dl0004" compact="compact"><dt>11</dt><dd>POWER SUPPLY APPARATUS</dd><dt>13</dt><dd>CHARGING CURRENT DETECTOR</dd><dt>14</dt><dd>BACKFLOW MONITORING UNIT</dd><dt>15</dt><dd>BLOCKING UNIT</dd></dl></li><li>FIG. 2 <dl id="dl0005" compact="compact"><dt>24</dt><dd>TIME DISPLAY APPARATUS</dd><dt>26</dt><dd>POWER SUPPLY CONTROLLER</dd><dt>31</dt><dd>CONSTANT VOLTAGE CIRCUIT</dd><dt>32</dt><dd>OSCILLATION CIRCUIT</dd><dt>33</dt><dd>DIVIDER CIRCUIT</dd><dt>35</dt><dd>FUNCTION LOGIC UNIT</dd></dl></li><li>FIG. 4 <dl id="dl0006" compact="compact"><dt>FORWARD CURRENT</dt><dd>(A)</dd><dt>FORWARD VOLTAGE</dt><dd>(V)</dd></dl></li><li>FIG. 5 <dl id="dl0007" compact="compact"><dt>S1</dt><dd>TRANSISTORS 53 AND 54 OFF TRANSISTOR 48 OFF TRANSISTOR 45 OFF</dd><dt>S2</dt><dd>START POWER GENERATION</dd><dt>S3</dt><dd>TRANSISTOR 41 ON</dd><dt>S4</dt><dd>QUICK START</dd><dt>S5</dt><dd>COMPARATOR 61 ENABLE TIMING?</dd><dt>S6</dt><dd>TRANSISTOR 48 OFF</dd><dt>S8</dt><dd>TRANSISTOR 48 ON</dd><dt>S9</dt><dd>COMPARATOR 61 CONSTANT ENABLE</dd><dt>S10</dt><dd>COMPARATOR 71 ENABLE TIMING?</dd><dt>S12</dt><dd>TRANSISTOR 53 ON, 54 OFF</dd><dt>S13</dt><dd>COMPARATOR 71 ENABLE TIMING?</dd><dt>S15</dt><dd>TRANSISTORS 53 AND 54 OFF</dd></dl></li><li>FIG. 6 <dl id="dl0008" compact="compact"><dt>S16</dt><dd>TRANSISTORS 53 AND 54 ON</dd><dt>S17</dt><dd>CANCEL QUICK START</dd><dt>S18</dt><dd>TRANSISTOR 48 ON TRANSISTOR 45 OFF</dd><dt>S19</dt><dd>COMPARATOR 71 ENABLE TIMING?</dd><dt>S21</dt><dd>TRANSISTOR 48 FORCIBLE OFF</dd><dt>S22</dt><dd>TRANSISTOR 45 ON</dd><dt>S23</dt><dd>EXCESS CHARGING PREVENTION STATE</dd><dt>S24</dt><dd>COMPARATOR 71 <chemistry id="chem0001" num="0001"><img file="EP1662631A2_D0001.tif" /></chemistry></dd><dt>S26</dt><dd>TRANSISTOR 45 OFF</dd><dt>S27</dt><dd>CANCEL TRANSISTOR 48 FORCIBLE OFF</dd><dt>S28</dt><dd>CANCEL EXCESS CHARGING PREVENTION</dd></dl></li><li>FIG. 7 <dl id="dl0009" compact="compact"><dt>S31</dt><dd>TRANSISTORS 53 AND 54 ON TRANSISTOR 48 ON TRANSISTOR 45 OFF</dd><dt>S32</dt><dd>COMPARATOR 61 <chemistry id="chem0002" num="0002"><img file="EP1662631A2_D0002.tif" /></chemistry></dd><dt>S33</dt><dd>END POWER GENERATION</dd><dt>S34</dt><dd>TRANSISTOR 41 OFF</dd><dt>S36</dt><dd>TRANSISTOR 48 OFF</dd><dt>S38</dt><dd>RESTORE COMPARATOR 61 SAMPLING OPERATION</dd><dt>S39</dt><dd>COMPARATOR 61 <chemistry id="chem0003" num="0003"><img file="EP1662631A2_D0003.tif" /></chemistry></dd><dt>S41</dt><dd>CONTINUE BLOCKING STATE</dd></dl></li></ul>