Semiconductor light emitting device
Abstract
The invention relates to a radiation-emitting semiconductor component which has a semiconductor layer sequence (1) with an active zone (2) for generating radiation and a first mirror arranged downstream of the active zone, the first mirror comprising a metal layer (4) and one on the active zone On the opposite side of the metal layer (4) arranged intermediate layer (3) consists of a radiation-transparent and electrically conductive material, the radiation-emitting semiconductor device for operation with an optical resonator and for generating predominantly incoherent radiation as RCLED is provided or the radiation-emitting semiconductor device for operation with an external optical Resonator and for generating predominantly coherent radiation is provided as VECSEL.

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Projected expiry passed 24 October 2025, 0.9 years ago.
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1 sheet
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Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| WO03007028A2 | Cites | World Intellectual Property Organization (WIPO) | X | Search report | 1-4,6,8-15,17-19,22,23 |
| EP0395315A2 | Cites | European Patent Office (EPO) | X | Search report | 1-4,6,8-15,17-20,22,23 |
| EP0495301A1 | Cites | European Patent Office (EPO) | X | Search report | 1-4,6,8-15,17-23 |
| US2002071463A1 | Cites | United States of America | X | Search report | 1,2,6,8,10,12,13,15,17-19,22,23 |
| US2002137243A1 | Cites | United States of America | X | Search report | 1,5-8,16-23 |
| US2003209714A1 | Cites | United States of America | X | Search report | 1-23 |
| WIPIEJEWSKI T ET AL: "VERTICAL-CAVITY SURFACE-EMITTING LASER DIODES WITH POST-GROWTH WAVELENGTH ADJUSTMENT", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 7, no. 7, 1 July 1995 (1995-07-01), pages 727 - 729, XP000516835, ISSN: 1041-1135 | Non-patent | – | – | Search report | – |
| ABRAM I ET AL: "Spontaneous Emission Control in Semiconductor Microcavities with Metallic or Bragg Mirrors", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, vol. 34, no. 1, 1 January 1998 (1998-01-01), pages 71 - 76, XP011051819, ISSN: 0018-9197 | Non-patent | – | – | Search report | – |
7 members in 4 offices; this record represents the family
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 102004057802 | Germany | – | |
| 102004057802 | Germany | A |
Members7
| Document | Office | Kind | |
|---|---|---|---|
| EP1662584A2 | European Patent Office (EPO) | A2 | |
| DE102004057802A1 | Germany | A1 | |
| JP2006157024A | Japan | A | |
| US2006222040A1 | United States of America | A1 | |
| US7283577B2 | United States of America | B2 | |
| EP1662584A3This record | European Patent Office (EPO) | A3 | |
| DE102004057802B4 | Germany | B4 |
12 legal events, as 2 offices reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | Office | |
|---|---|---|---|
| Designated country de not longer valid8566 | 8566 | DE | |
| Application deemed to be withdrawnWithdrawn18D | 18D | EP | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | EP | |
| Designation fees paidAKX | AKX | EP | |
| Designated contracting statesAK | AK | EP | |
| Request for extension of the european patentAX | AX | EP | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | EP | |
| Party data changed (applicant data changed or rights of an application transferred)RAP1 | RAP1 | EP | |
| Party data changed (applicant data changed or rights of an application transferred)RAP1 | RAP1 | EP | |
| Designated contracting statesAK | AK | EP | |
| Request for extension of the european patentAX | AX | EP | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI | EP |
Numbers
- Publication
- 1662584
- Application
- 50231752
Titles3
- German
- Strahlungemittierendes Halbleiterbauelement
- English
- Semiconductor light emitting device
- French
- Dispositf semiconducteur émetteur de lumière
Classification
- CPC, 9
- H10H20/8142
- B82Y20/00
- H01S5/0217
- H01S5/18308
- H01S5/18375
- H01S5/34326
- H01S5/04256
- H10H20/862
- H10H20/835
- IPC, 5
- H01L33 00
- H01S5 14
- H01S5 183
- H01L33 10
- H01L33 46
Designated states36
- Contracting states, 31
- Austria
- Belgium
- Bulgaria
- Switzerland
- Cyprus
- Czechia
- Germany
- Denmark
- Estonia
- Spain
- Finland
- France
- United Kingdom
- Greece
- Hungary
- Ireland
- Iceland
- Italy
- Liechtenstein
- Lithuania
- Luxembourg
- Latvia
- Monaco
- Netherlands (Kingdom of the)
and 7 moreShow fewer
- Poland
- Portugal
- Romania
- Sweden
- Slovenia
- Slovakia
- Türkiye
- Extension states, 5
- Albania
- Bosnia and Herzegovina
- Croatia
- North Macedonia
- Yugoslavia, later Serbia and Montenegro (until 2006)