EP1598450A4 - B-Ga2o3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2o3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD

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Every citation, both ways

Citations
Document	Relation	Office	Category	Cited during	Relevant claims
EP1367657A2	Cites	European Patent Office (EPO)	PX	Search report	1-5,7-14
EP1367657A	Cites	European Patent Office (EPO)	–	–	–
TOMM Y ET AL: "Czochralski grown Ga2O3 crystals", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 220, no. 4, December 2000 (2000-12-01), pages 510 - 514, XP004225848, ISSN: 0022-0248	Non-patent	–	–	Search report	–
See also references of WO 2004074556A2	Non-patent	–	–	Search report	–

39 members in 10 offices; this record represents the family

This recordMember, by publication datePriority claim

Priority claims7

Priority claims
Document	Office	Kind	Date
2003046552	Japan	–	2003-02-24
2003046552	Japan	A	2003-02-24
2003066020	Japan	–	2003-03-12
2003066020	Japan	A	2003-03-12
2003137916	Japan	–	2003-05-15
2003137916	Japan	A	2003-05-15
2004001653	Japan	W	2004-02-16

Members39

Family members, oldest first
Document	Office	Kind
CA2517024A1	Canada	A1	2004-09-02
WO2004074556A2	World Intellectual Property Organization (WIPO)	A2	2004-09-02
JP2004262684A	Japan	A	2004-09-24
JP2004269338A	Japan	A	2004-09-30
WO2004074556A3	World Intellectual Property Organization (WIPO)	A3	2004-11-11
TW200424128A	Taiwan Province of China	A	2004-11-16
JP2004342857A	Japan	A	2004-12-02
EP1598450A2	European Patent Office (EPO)	A2	2005-11-23
KR20060007366A	Republic of Korea	A	2006-01-24
RU2005126721A	Russian Federation	A	2006-02-10
CN1754013A	China	A	2006-03-29
US2006150891A1	United States of America	A1	2006-07-13
JP4020314B2	Japan	B2	2007-12-12
KR100787272B1	Republic of Korea	B1	2007-12-20
RU2313623C2	Russian Federation	C2	2007-12-27
CN100370065C	China	C	2008-02-20
EP1598450A4This record	European Patent Office (EPO)	A4	2008-04-23
US7393411B2	United States of America	B2	2008-07-01
US2008265264A1	United States of America	A1	2008-10-30
CA2517024C	Canada	C	2009-12-01
US7713353B2	United States of America	B2	2010-05-11
US2010229789A1	United States of America	A1	2010-09-16
JP4565062B2	Japan	B2	2010-10-20
EP2267194A2	European Patent Office (EPO)	A2	2010-12-29
EP2273569A2	European Patent Office (EPO)	A2	2011-01-12
JP4630986B2	Japan	B2	2011-02-09
EP2273569A3	European Patent Office (EPO)	A3	2011-03-02
EP1598450B1	European Patent Office (EPO)	B1	2011-09-21
AT525498T	Austria	T	2011-10-15
ATE525498T1	Austria	T1	2011-10-15
EP2267194A3	European Patent Office (EPO)	A3	2011-10-19
TW201144227A	Taiwan Province of China	A	2011-12-16
TWI370804B	Taiwan Province of China	B	2012-08-21
US8262796B2	United States of America	B2	2012-09-11
TW201242901A	Taiwan Province of China	A	2012-11-01
US2012304918A1	United States of America	A1	2012-12-06
EP2267194B1	European Patent Office (EPO)	B1	2013-04-17
US8747553B2	United States of America	B2	2014-06-10
TWI450865B	Taiwan Province of China	B	2014-09-01

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	Event	Code	Office
2022-01-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2022-01-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2021-12-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2021-12-22	Lapsed because of non-payment of the annual feeLapsedMM	MM	NL
2021-09-01	Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal feeWithdrawnR119	R119	DE
2020-06-30	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2020-05-01	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2020-05-01	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2018-02-23	Fee paymentPLFP	PLFP	FR
2017-02-17	Fee paymentPLFP	PLFP	FR
2016-02-18	Fee paymentPLFP	PLFP	FR
2014-07-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2014-05-30	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2014-04-30	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2013-06-28	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2013-04-30	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2013-01-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2013-01-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-11-21	Patent lapsedLapsedMM4A	MM4A	IE
2012-10-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-10-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-10-24	Gb: european patent ceased through non-payment of renewal feeCeasedGBPC	GBPC	EP
2012-10-18	No opposition filed against granted patent, or epo opposition proceedings concluded without decisionGrantedR097	R097	DE
2012-09-28	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-09-28	Patent ceasedCeasedPL	PL	CH
2012-08-29	No opposition filedOpposition26N	26N	EP
2012-07-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-07-27	No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE	PLBE	EP
2012-07-27	Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA	STAA	EP
2012-05-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-05-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-05-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-05-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-04-30	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-04-30	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-03-30	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-03-15	Deletion acc. to par. 5 (withdrawal of the translation of the ep patent)MK05	MK05	AT
2012-02-29	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-02-29	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-02-29	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-02-29	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-01-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-01-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2012-01-04	Translation files for an european patent granted for nl, confirming art. 52 par. 1 or 6 of the patents act 1995GrantedT3	T3	NL
2011-11-17	Dpma publication of mentioned ep patent grantGrantedR096	R096	DE
2011-10-12	European patents granted designating irelandGrantedFG4D	FG4D	IE
2011-09-30	European patent takes effect as a national patent in ch/liEP	EP	CH
2011-09-21	Designated contracting statesAK	AK	EP
2011-09-21	European patent grantedGrantedFG4D	FG4D	GB
2011-08-19	(expected) grantORIGINAL CODE: 0009210GRAA	GRAA	EP
2011-07-28	Grant fee paidORIGINAL CODE: EPIDOSNIGR3GRAS	GRAS	EP
2011-03-30	Title (correction)BETA-GA2O3 SINGLE CRYSTAL GROWING METHODRTI1	RTI1	EP
2011-03-22	Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOSNIGR1GRAP	GRAP	EP
2008-09-03	First examination report despatched17Q	17Q	EP
2008-04-23	Supplementary search report drawn up and despatchedA4	A4	EP
2006-06-14	Request for extension of the european patent (deleted)DAX	DAX	EP
2005-11-23	Request for examination filed17P	17P	EP
2005-11-23	Designated contracting statesAK	AK	EP
2005-11-23	Request for extension of the european patentAX	AX	EP
2005-10-07	Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI	PUAI	EP

Numbers

Publication: 1598450
Application: 47114541

Titles3

German: VERFAHREN ZUM ZIEHEN VON B-Ga2o3 EINKRISTALLEN, VERFAHREN ZUM DÜNNFILMEINKRISTALL ZIEHEN, Ga2o3-LICHTEMISSIONSVORRICHTUNG UND HERSTELLUNGSVERFAHREN DAFÜR
English: B-Ga2o3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2o3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD
French: PROCEDE DE CROISSANCE MONOCRISTALLINE B-Ga2o3, PROCEDE DE CROISSANCE MONOCRISTALLINE DE FILM MINCE, DISPOSITIF ELECTROLUMINESCENT DE gA2O3 ET SON PROCEDE DE FABRICATION

Classification

CPC, 10: C30B29/16
C30B23/02
H10H20/01
H10H20/822
H10P14/2918
H10P14/2926
H10P14/3434
H10P14/22
C30B13/34
H10H20/818
Filled: the office’s first classification
IPC, 4: C30B1 00
C30B23 02
H01L33 02
H01L33 26

Designated states27

Contracting states, 27: Austria
Belgium
Bulgaria
Switzerland
Cyprus
Czechia
Germany
Denmark
Estonia
Spain
Finland
France
United Kingdom
Greece
Hungary
Ireland
Italy
Liechtenstein
Luxembourg
Monaco
Netherlands (Kingdom of the)
Portugal
Romania
Sweden
and 3 moreShow fewer
Slovenia
Slovakia
Türkiye

B-Ga2o3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2o3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD

Abstract

Term