EP1593165A2

Light emitting device incorporating a photoluminescent material and method of forming the same

Abstract

A light emitting device uses a source of exciting radiation such as an light emitting diode to excite a photo luminescent material to provide a source of visible light. The photo luminescent material is loaded into a low density material such as a xerogel or an aerogel which is adjacent the source of exciting radiation

Term

Term ended

Projected expiry passed 29 January 2024, 2.7 years ago.

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39 claims: 4 independent, 35 dependent

  1. 1
    Claims of equivalent WO 2004075308 A2 Claims:1. A semiconductor based light emitting device comprising: a light emitting diode that emits an exciting radiation;a porous matrix covering at least a portion of said light emitting diode, and a substance loaded into said porous matrix which emits a responsive radiation upon interaction with the exciting radiation emitted by said diode.
  2. 2
    A light emitting device according to Claim 1 wherein said radiation responsive substance is a phosphor.
  3. 3
    A light emitting device according to Claim 2 wherein said phosphor emits light within the visible portion of the spectrum in response to the exciting radiation from said diode.
  4. 4
    A light emitting device according to Claim 1 wherein said light emitting diode comprises a silicon carbide substrate and an active layer that includes at least one Group III nitride;and wherein said responsive substance comprises a photoluminescent material loaded into said porous matrix which emits visible light upon interaction with the exciting radiation emitted by said diode.
  5. 5
    A light emitting device according to Claim 1 or Claim 4 wherein said diode emits electromagnetic radiation in a frequency selected from the group consisting of the ultraviolet, visible and infrared electromagnetic spectrum.
  6. 6
    A light emitting device according to Claim 1 or Claim 4 wherein said porous matrix is substantially transparent with respect to said exciting radiation, responsive radiation, and visible light.
  7. 7
    A light emitting device according to Claim 1 or Claim 4 wherein said porous matrix is a sol gel material.
  8. 8
    A light emitting device according to Claim 2 or Claim 4 wherein said photoluminescent material is a phosphor.
  9. 9
    A light emitting device according to Claim 1 comprising:a laser diode that emits an exciting radiation, said laser diode having a silicon carbide substrate and an active layer that includes at least one Group III nitride;and with said porous matrix covering at least a portion of said laser diode, and a photoluminescent material loaded into said porous matrix which emits a responsive radiation upon interaction with the exciting radiation emitted by said laser diode.
  10. 10
    A light emitting device according to Claim 9 wherein said laser diode has an active layer selected from the group consisting of gallium nitride, indium gallium nitride and indium aluminum gallium nitride.
  11. 11
    A light emitting device according to Claim 9 wherein said porous matrix is a sol gel substantially transparent with respect to said exciting radiation and visible light.
  12. 12
    A light emitting device according to Claim 7 or Claim 11 wherein said sol gel is selected from the group consisting of aerogels and xerogels.
  13. 13
    A semiconductor-based light emitting device according to Claim 1 wherein:said light emitting diode includes a single crystal silicon carbide substrate;said porous matrix on said diode is selected from the group consisting of aerogels and xerogels;and said responsive substance is a phosphor loaded in said matrix and that responds to the emission from said diode with a secondary emission of a different wavelength.
  14. 14
    A light emitting device according to any of Claims 1, 4, 9, or 13 wherein said porous matrix is directly on said diode.
  15. 15
    A light emitting device according to Claim 1 or Claim 13 wherein said matrix has a porosity of at least about 50 percent by volume.
  16. 16
    A light emitting device according to Claim 1 or Claim 13 wherein said matrix has a porosity of at least about 90 percent by volume.
  17. 17
    A light emitting device according to Claim 13 wherein said phosphor is present in said matrix in an amount of between about one milligram and one gram per cubic centimeter.
  18. 18
    A light emitting device according to Claim 13 wherein said porous matrix is substantially transparent with respect to said exciting radiation and said responsive radiation.
  19. 19
    A light emitting device according to Claim 1 or Claim 13 wherein said porous matrix comprises a silica compound.
  20. 20
    A light emitting device according to Claim 19 wherein said sol gel material has a density between about 0.01 g/cm and 1.6 g/cm , a pore size distribution of between about 1 nm and 500 nm, and a surface area of at least 100 m 2 /g.
  21. 21
    A light emitting device according to Claim 19 wherein said silica compound comprises methacryloxypropyltrimethoxysilane.
  22. 22
    A light emitting device according to Claim 1 or Claim 13 wherein said phosphor is present in said matrix in the form of particles between about 0.001 microns and about 20 microns.
  23. 23
    A light emitting device according to Claim 8 or Claim 9 or Claim 13 wherein said phosphor is selected rom the group consisting of oxides of silicon, aluminum, boron, titanium, zirconium, vanadium, yttrium, magnesium, molybdenum, and iron;and SiO 2 , Si(OCH 3 ) 4 , Si(OC 2 H 5 ) 4 , A1OOH, Al(OC 4 H 9 ) 3 , B(OC 4 H 9 ) 3 , Ti(OC 3 H 7 ) 4 , Zr(OC 3 H 7 ) , TiO 2 , and ZrO 2 , YAG, garnet-based phosphors and mixtures of two or more of these.
  24. 24
    A light emitting device according to Claim 1 or Claim 13 wherein said diode is selected from the group consisting of homojunctions, single heterojunctions, and double heterojunctions.
  25. 25
    A light emitting device according to Claim 1 or Claim 13 wherein said diode includes a feature selected from the group consisting of quantum wells, multiple quantum wells, and superiattice structures.
  26. 26
    A light emitting device according to any of Claims 1, 4, or 13 wherein said ight emitting diode has an active layer selected from the group consisting of gallium nitride, indium gallium nitride and indium aluminum gallium nitride.
  27. 27
    A method for forming a light emitting device, the method comprising:loading a sol with a substance which emits a responsive radiation upon interaction with exciting radiation;forming a porous matrix from the loaded sol;and placing the porous matrix adjacent a light emitting diode which provides a source of exciting radiation.
  28. 28
    A method according to Claim 27 comprising placing the porous matrix directly on the diode.
  29. 29
    A method according to Claim 27 wherein the sol comprises particles of silica.
  30. 30
    A method according to Claim 27 wherein comprising loading the sol with methacryloxypropyltrimethoxysilane.
  31. 31
    A method according to Claim 27 wherein the step of forming the porous matrix comprises forming a xerogel or an aerogel.
  32. 32
    A method according to Claim 27 wherein the step of loading the sol comprises loading a sol that includes an alcohol as a solvent.
  33. 33
    A method according to Claim 27 wherein the step of placing the porous matrix adjacent a light emitting device is selected from the group consisting of molding and casting the sol on the light emitting diode.
  34. 34
    A method according to Claim 27 wherein the step of placing the porous matrix adjacent the diode is selected from the group consisting of spin coating the sol on the light emitting diode, spray coating the sol on the light emitting diode, and dip coating the sol on the light emitting diode.
  35. 35
    A method according to Claim 27 wherein the step of forming the porous matrix comprises drying the sol under supercritical conditions.
  36. 36
    A method according to Claim 27 comprising loading the sol with a phosphor.
  37. 37
    A method according to Claim 36 comprising loading the sol with a phosphor is in the form of particles between about 0.001 microns and about 20 microns.
  38. 38
    A method according to Claim 36 comprising loading the sol with a phosphor is selected from the group consisting of oxides of silicon, aluminum, boron, titanium, zirconium, vanadium, yttrium, magnesium, molybdenum, and iron;and SiO 2 , Si(OCH 3 ) 4 , Si(OC 2 H 5 ) 4 , A1OOH, Al(OC 4 H 9 ) 3 , B(OC 4 H 9 ) 3 , Ti(OC 3 H 7 ) 4 , Zr(OC 3 H 7 ) 4 , TiO 2 , and ZrO 2 , YAG, garnet-based phosphors and mixtures of two or more of these.
  39. 39
    A method according to Claim 27 wherein the step of placing the porous matrix adjacent the light emitting diode comprises forming the porous matrix separate from the diode then mechanically placing the porous matrix adjacent the light emitting diode.
Independent claims39