Semiconductor light emitting device and fabrication method thereof
Abstract
A light emitting device comprises a light emitting element having a first electrode and a second electrode, and a semiconductor member having a cavity in a principal surface thereof, inside which the light emitting element is mounted, and electrically connected to the light emitting element, wherein the semiconductor member is constructed as a voltage regulating diode for stabilizing a voltage supplied from the exterior. As a result, the light emitting element can be protected from a static electricity or a surge voltage flowed therein from the exterior, the entire size of the system can be remarkably reduced so as to simplify a structure thereof, and heat generated from the system can be effectively discharged to the exterior. In addition, by providing a reflection portion in the cavity, light emitted from the light emitting element can be efficiently condensed.

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Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| JP2000106458A | Cites | Japan | XYI | Search report | 1-3,6,8,10,11,13-23,38,45,46,52-56 |
| JP2001015815A | Cites | Japan | Y | Search report | 51 |
| JP2003142594A | Cites | Japan | Y | Search report | 12 |
| JP2004103986A | Cites | Japan | Y | Search report | 5,43,44,49 |
| JP2004179572A | Cites | Japan | YP | Search report | 4,41,42,47,48 |
| WO2005062393A2 | Cites | World Intellectual Property Organization (WIPO) | E | Search report | 1,2,6,16-18,20,23 |
| US5907151A | Cites | United States of America | XY | Search report | 1,16,20,23,24 |
| JPH11298041A | Cites | Japan | Y | Search report | 4,41,42,47,48 |
| JPH11354836A | Cites | Japan | XYI | Search report | 1-3,6,8,10,11,13-20,38,45,46,52-55 |
13 members in 5 offices; this record represents the family
Priority claims2
| Document | Office | Kind | Date |
|---|---|---|---|
| 2004026432 | Republic of Korea | – | |
| 20040026432 | Republic of Korea | A |
Members13
| Document | Office | Kind | |
|---|---|---|---|
| CN1684281A | China | A | |
| EP1587151A2 | European Patent Office (EPO) | A2 | |
| US2005230692A1 | United States of America | A1 | |
| JP2005311364A | Japan | A | |
| KR20060045682A | Republic of Korea | A | |
| KR100631521B1 | Republic of Korea | B1 | |
| CN100370632C | China | C | |
| US7408203B2 | United States of America | B2 | |
| US2008290820A1 | United States of America | A1 | |
| US8008677B2 | United States of America | B2 | |
| EP1587151A3This record | European Patent Office (EPO) | A3 | |
| US2011278637A1 | United States of America | A1 | |
| US8263996B2 | United States of America | B2 |
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Numbers
- Publication
- 1587151
- Application
- 52908183
Titles3
- German
- Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
- English
- Semiconductor light emitting device and fabrication method thereof
- French
- Dispositif semi-conducteur d'émission de la lumière et méthode de fabrication
Classification
- CPC, 14
- H10H20/857
- A47K3/022
- H01S5/02212
- H01S5/06825
- H01S5/0234
- H01S5/02325
- H01S5/0237
- H10W72/07251
- H10W72/20
- H10W90/00
- H10W90/754
- H10W72/884
- A61H35/006
- A61H2201/0228
- IPC, 7
- H01L33 00
- H01L25 16
- H01S5 02
- H01S5 022
- H01S5 068
- H01L33 62
- H01L33 64
Designated states36
- Contracting states, 30
- Austria
- Belgium
- Bulgaria
- Switzerland
- Cyprus
- Czechia
- Germany
- Denmark
- Estonia
- Spain
- Finland
- France
- United Kingdom
- Greece
- Hungary
- Ireland
- Iceland
- Italy
- Liechtenstein
- Lithuania
- Luxembourg
- Monaco
- Netherlands (Kingdom of the)
- Poland
and 6 moreShow fewer
- Portugal
- Romania
- Sweden
- Slovenia
- Slovakia
- Türkiye
- Extension states, 6
- Albania
- Bosnia and Herzegovina
- Croatia
- Latvia
- North Macedonia
- Yugoslavia, later Serbia and Montenegro (until 2006)