EP1586119A2

An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same

Abstract

This record has no abstract on file.

Term

Term ended

Projected expiry passed 18 December 2023, 2.8 years ago.

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10 members in 6 offices

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339379United States of America
33937903United States of AmericaA
0340680United States of AmericaW

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US2004137673A1United States of AmericaA1
WO2004064172A2World Intellectual Property Organization (WIPO)A2
AU2003301146A1AustraliaA1
AU2003301146A8AustraliaA8
WO2004064172A3World Intellectual Property Organization (WIPO)A3
TW200503115ATaiwan Province of ChinaA
EP1586119A2This recordEuropean Patent Office (EPO)A2
US6963090B2United States of AmericaB2
JP2006513572AJapanA
TWI333260BTaiwan Province of ChinaB