EP1586119A2
An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same
Abstract
This record has no abstract on file.
Term
Term ended
Projected expiry passed 18 December 2023, 2.8 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
10 members in 6 offices
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 339379 | United States of America | – | |
| 33937903 | United States of America | A | |
| 0340680 | United States of America | W |
Members10
| Document | Office | Kind | |
|---|---|---|---|
| US2004137673A1 | United States of America | A1 | |
| WO2004064172A2 | World Intellectual Property Organization (WIPO) | A2 | |
| AU2003301146A1 | Australia | A1 | |
| AU2003301146A8 | Australia | A8 | |
| WO2004064172A3 | World Intellectual Property Organization (WIPO) | A3 | |
| TW200503115A | Taiwan Province of China | A | |
| EP1586119A2This record | European Patent Office (EPO) | A2 | |
| US6963090B2 | United States of America | B2 | |
| JP2006513572A | Japan | A | |
| TWI333260B | Taiwan Province of China | B |
9 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| Public notificationSINCE THE INVENTOR MR. HARTIN HAS LEFT THE COMPANY IT HAS BEEN IMPOSSIBLE TO FIND OUT HIS NEW ADDRESS.32PN | 32PN | |
| Public notification under rule 129 epcORIGINAL CODE: 0009425PUAJ | PUAJ | |
| Request for extension of the european patent (deleted)DAX | DAX | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAX | AX | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1586119
- Application
- 38152328
Titles3
- German
- METALOXYD-HALBLEITER FELDEFFEKTTRANSISTOR VOM ANREICHERUNGSTYP UND HERSTELLUNGSVERFAHREN
- English
- AN ENHANCEMENT MODE METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME
- French
- TRANSISTOR A EFFET DE CHAMP A METAL-OXYDE-SEMI-CONDUCTEUR AMELIORE ET SON PROCEDE DE FORMATION
Classification
- CPC, 7
- H10D64/111
- H10D62/85
- H10D64/518
- H10D64/691
- H10D30/021
- H10D30/4735
- H10D30/4738
- IPC, 1
- H01L21 336
Designated states31
- Contracting states, 27
- Austria
- Belgium
- Bulgaria
- Switzerland
- Cyprus
- Czechia
- Germany
- Denmark
- Estonia
- Spain
- Finland
- France
- United Kingdom
- Greece
- Hungary
- Ireland
- Italy
- Liechtenstein
- Luxembourg
- Monaco
- Netherlands (Kingdom of the)
- Portugal
- Romania
- Sweden
and 3 moreShow fewer
- Slovenia
- Slovakia
- Türkiye
- Extension states, 4
- Albania
- Lithuania
- Latvia
- North Macedonia