EP1579479A4
High density semiconductor memory cell and memory array using a single transistor
Abstract
This record has no abstract on file.
Term
Term ended
Projected expiry passed 22 April 2023, 3.4 years ago.
- Priority
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- Projected expiry
- Today
10 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7 Sheet 8 Sheet 9 Sheet 10
Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| US5550773A | Cites | United States of America | A | Search report | 1,8,9,13 |
| US5949712A | Cites | United States of America | X | Search report | 1-6,8-13 |
| See also references of WO 2004003966A2 | Non-patent | – | – | Search report | – |
25 members in 7 offices
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 133704 | United States of America | – | |
| 13370402 | United States of America | A | |
| 0312843 | United States of America | W |
Members25
| Document | Office | Kind | |
|---|---|---|---|
| US2003202376A1 | United States of America | A1 | |
| US2003206467A1 | United States of America | A1 | |
| TW200400624A | Taiwan Province of China | A | |
| WO2004003966A2 | World Intellectual Property Organization (WIPO) | A2 | |
| AU2003269817A1 | Australia | A1 | |
| AU2003269817A8 | Australia | A8 | |
| US2004125671A1 | United States of America | A1 | |
| US2004156234A1 | United States of America | A1 | |
| US6777757B2 | United States of America | B2 | |
| US2004223363A1 | United States of America | A1 | |
| US6856540B2 | United States of America | B2 | |
| US6898116B2 | United States of America | B2 | |
| US6940751B2 | United States of America | B2 | |
| EP1579479A2 | European Patent Office (EPO) | A2 | |
| CN1694257A | China | A | |
| US6992925B2 | United States of America | B2 | |
| JP2006505920A | Japan | A | |
| TWI261918B | Taiwan Province of China | B | |
| WO2004003966A3 | World Intellectual Property Organization (WIPO) | A3 | |
| CN101095238A | China | A | |
| CN100499132C | China | C | |
| CN100524831C | China | C | |
| EP1579479A4This record | European Patent Office (EPO) | A4 | |
| JP4410101B2 | Japan | B2 | |
| EP1579479B1 | European Patent Office (EPO) | B1 |
67 legal events, as 8 offices reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | Office | |
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| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Patent expired after termination of 20 yearsExpiredPE20 | PE20 | GB | |
| Expiry of rightR071 | R071 | DE | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)REGISTERED BETWEEN 20190131 AND 20190206732E | 732E | GB | |
| Change of applicant/patenteeR081 | R081 | DE | |
| Change of representativeR082 | R082 | DE | |
| Change of representativeR082 | R082 | DE | |
| Fee paymentPLFP | PLFP | FR | |
| Fee paymentPLFP | PLFP | FR | |
| Fee paymentPLFP | PLFP | FR | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| No opposition filed against granted patent, or epo opposition proceedings concluded without decisionGrantedR097 | R097 | DE | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| No opposition filedOpposition26N | 26N | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Patent lapsedLapsedMM4A | MM4A | IE | |
| No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE | PLBE | EP | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA | STAA | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Patent ceasedCeasedPL | PL | CH | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Discontinued in the netherlands as no translation has been filedVDEP | VDEP | NL | |
| Deletion acc. to par. 5 (withdrawal of the translation of the ep patent)MK05 | MK05 | AT | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Dpma publication of mentioned ep patent grantGrantedR096 | R096 | DE | |
| European patents granted designating irelandGrantedFG4D | FG4D | IE | |
| European patent takes effect as a national patent in ch/liEP | EP | CH | |
| Reference to at number (ep patent validated in austria)REF | REF | AT | |
| Designated contracting statesAK | AK | EP | |
| European patent grantedGrantedFG4D | FG4D | GB | |
| (expected) grantORIGINAL CODE: 0009210GRAA | GRAA | EP | |
| Grant fee paidORIGINAL CODE: EPIDOSNIGR3GRAS | GRAS | EP | |
| Information related to communication of intention to grant a patent modifiedORIGINAL CODE: EPIDOSCIGR1GRAC | GRAC | EP | |
| Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOSNIGR1GRAP | GRAP | EP | |
| First examination report despatched17Q | 17Q | EP | |
| Supplementary search report drawn up and despatchedA4 | A4 | EP | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | EP | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | EP | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | EP | |
| Party data changed (applicant data changed or rights of an application transferred)RAP1 | RAP1 | EP | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | EP | |
| Information provided on ipc code assigned before grantRIC1 | RIC1 | EP | |
| Availability of information related to the publication of the international search reportORIGINAL CODE: 0009015PUAK | PUAK | EP | |
| Request for examination filed17P | 17P | EP | |
| Designated contracting statesAK | AK | EP | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI | EP |
Numbers
- Publication
- 1579479
- Application
- 37517521
Titles3
- German
- HOCHDICHTE HALBLEITERSPEICHERZELLE UND SPEICHERARRAY MIT EINEM EINZIGEN TRANSISTOR
- English
- HIGH DENSITY SEMICONDUCTOR MEMORY CELL AND MEMORY ARRAY USING A SINGLE TRANSISTOR
- French
- CELLULE MEMOIRE SEMI-CONDUCTRICE HAUTE DENSITE ET RESEAU MEMOIRE UTILISANT UN SEUL TRANSISTOR
Classification
- CPC, 1
- G11C17/16
- IPC, 4
- G11C17 12
- H01L29 94
- H01L31 062
- G11C17 16
Designated states27
- Contracting states, 27
- Austria
- Belgium
- Bulgaria
- Switzerland
- Cyprus
- Czechia
- Germany
- Denmark
- Estonia
- Spain
- Finland
- France
- United Kingdom
- Greece
- Hungary
- Ireland
- Italy
- Liechtenstein
- Luxembourg
- Monaco
- Netherlands (Kingdom of the)
- Portugal
- Romania
- Sweden
and 3 moreShow fewer
- Slovenia
- Slovakia
- Türkiye