Light emitting device using a three-dimension percolated layer, and manufacturing process thereof
Abstract
A process for manufacturing an electroluminescent device comprising the steps of:making an organic or inorganic templating frame, comprising monodispersed nanoelements, in particular nanospheres;providing said nanoelements with a sheath consisting of metal nanoparticles, each nanoelement with its sheath of metal nanoparticles forming a core shell;assembling together the core shells so as to make the three-dimensional percolated layer, having cavities whose size is around wavelength.

Term
Term ended
Expired 18 March 2024, 2.5 years ago.
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17 claims: 2 independent, 15 dependent
- 1A light emitting device (1) comprising - a three-dimensional percolated metal layer (3) comprising metal nanoparticles (P), the metal nanoparticles (P) being distributed to define metal-free spaces, electroluminescence spots being included in the three-dimensional percolated metal layer (3), - a transparent substrate (2) for said percolated metal layer (3), - at least two metal electrodes (4', 4") between which said percolated metal layer (3) is placed, - a protective layer (5) arranged on said percolated metal layer (3), - a supply generator (6) connected to the electrodes (4', 4"), wherein said electrodes (4', 4") are operative to generate at the ends of the percolated metal layer (3) a potential difference enabling to inject electrons by tunnel effect through the percolated metal layer (3) into the electroluminescence spots, characterized in that said metal-free spaces are arranged according to a regular three-dimensional photonic crystal-type lattice, said metal-free spaces having dimensions in the order of the visible wavelength to ease spontaneous emission of visible radiation from said electroluminescence spots.
- 7A process for manufacturing a light emitting device having a metallic three-dimensional percolated layer (3), the process comprising a step of fabricating said metallic three-dimensional percolated layer (3) by using an organic or inorganic templating frame comprising monodispersed nanoelements (S), in particular nanospheres, said step of fabricating including:- providing the nanoelements (S) with a respective sheath formed by metal nanoparticles (P), each nanoelement (S) with its sheath of metal nanoparticles (P) forming a core shell (CS);- assembling together the core shells (CS) so as to make the three-dimensional percolated layer (3), such that said layer (3) has metal-free spaces, determined by the volume of said nanoelements (S), whose dimensions are in the order of the visible wavelength, wherein, after the three-dimensional percolated layer (3) has been obtained, the nanoelements (S) are kept within said layer or removed from said layer.
Independent claims2
44 paragraphs, as filed
Field of the invention
0001The present invention relates to a light emitting device, such as an electroluminescent device or an incandescent device, based on tunnel effect and using a three-dimensional percolated layer, for use in the field of photonics.
Background of the invention
0002In general, a percolated layer is a non-continuous metal layer comprising metal nanoparticles interconnected one to the other so as to ensure electric conduction.
0003In the case of two-dimensional percolated layers, metal nanoparticles are distributed on a single plane and interconnected one to the other so as to ensure electric conduction on the plane of the layer. In another type of percolated layer, known as three-dimensional layer, metal nanoparticles are distributed on a generic three-dimensional structure instead of a single plane.
0004Three-dimensional percolated structures are generally obtained by supramolecular templating techniques, which generally make use of asymmetric organic molecules as templating elements, to be removed once the metal nanoporous structure has been obtained.
0005The interface metal-insulator is a typical situation within a metal system under percolation, which can be met for every discontinuity of the system itself.
0006There are various mechanisms of electron transport through an interface metal-insulator-metal, namely ohmic conduction, ionic conduction, heat emission, emission by field effect. In a given material each of the aforesaid mechanisms dominates within a given temperature and voltage range (electric field) and has a characteristic dependence on current, voltage and temperature. These various processes are not necessarily independent one from the other.
0007Emission by field effect, also known as Fowler-Nordheim electron tunneling effect, consists in electron transport through an interface metal-insulator-metal due to tunnel effect. Said phenomenon takes place in the presence of strong electric fields, which can bend the energy bands of the insulator means until a narrow triangular potential barrier is built between metal and insulator. The density of emission current by field effect strongly depends on the intensity of the electric field, whereas it is basically independent from temperature, according to the following function:<maths id="math0001"><math display="block"><mi>j</mi><mo>=</mo><mfrac><mi>C</mi><mi>φ</mi></mfrac><mfenced><mi>β</mi><mo></mo><msup><mi>E</mi><mn>2</mn></msup></mfenced><mo></mo><mi>exp</mi><mfenced><mo>-</mo><mfrac><mrow><mi>B</mi><mo></mo><msup><mi>φ</mi><mmultiscripts><msub><mo>/</mo><mn>2</mn></msub><mprescripts /><none /><mn>3</mn></mmultiscripts></msup></mrow><mrow><mi mathvariant="italic">β</mi><mo></mo><mi mathvariant="italic">E</mi></mrow></mfrac></mfenced></math><img file="EP1577957B1_D0001.tif" /></maths> where <i>E</i> is the intensity of the electric field, φ is the height of the potential barrier, B, C and β are constants.
0008The probability of tunneling for the electrons of Fermi Level is very low unless the barrier has a thickness below 10Å. The critical value of the electric field above which emission by tunneling effect takes place is of about 10<sup>9</sup> volt/meter.
0009Within a percolated metal system, and namely on every interface metal-void, there are local increases of electric field, such as to reach values of electric field intensity that are necessary for electron tunneling effect. On every discontinuity of the percolated metal system, where there is a local increase of electric field and electron emission by field effect takes place, a local increase of current density can be observed. As a matter of fact, electrons emitted by field effect, as well as those deriving from heat emission, contribute to total electric current. For this reason the percolated metal system shows a voltage-current characteristic with a non-ohmic development: the increase of current with the on applied voltage, thanks to heat emission and to emission by field effect, is faster than in an ohmic conductor with a linear characteristic.
0010The present Applicant has previously suggested to exploit the electron tunneling effect that can be obtained in a percolated metal structure so as to excite luminescent nanoparticles present within the structure. To this purpose, document <patcit id="pcit0001" dnum="WO03058728A"><text>W003058728</text></patcit> describes an electroluminescent device comprising: <ul id="ul0001" list-style="dash" compact="compact"><li>a glass or plastic supporting substrate;</li><li>at least two electrodes placed on the substrate;</li><li>a plurality of luminescent inclusions housed in respective cavities of the three-dimensional percolated layer,</li></ul> in which the luminescent inclusions are operative to emit light when excited by electrons getting through the three-dimensional percolated layer by electron tunneling effect.
0011<patcit id="pcit0002" dnum="US6479146B"><text>US-B-6,479,146</text></patcit> discloses a process for preparing coated particles and hollow shells by coating colloidal particles with alternating layers of oppositely charged nanoparticles and polyelectrolytes, and optionally removing the colloidal cores.
Summary of the invention
0012The present invention mainly aims at suggesting a new electroluminescent device based on tunnel effect or an incandescent device, comprising a three-dimensional percolated layer, for use in the field of photonics.
0013Said aim is achieved according to the present invention by means of a device and a process having the characteristics as in the appended claims, which are an integral and substantial part of the present invention.
Brief description of the drawings
0014Further aims, characteristics and advantages of the present invention shall be evident from the following detailed description and from the accompanying drawings, provided as a mere explicative and nonlimiting example, in which: <ul id="ul0002" list-style="dash" compact="compact"><li><figref idref="f0001">Figure 1</figref> is a schematic lateral section of an electroluminescent device comprising a three-dimensional percolated layer made according to the present invention;</li><li><figref idref="f0001">Figure 2</figref> is plan view of the device of <figref idref="f0001">Figure 1</figref>;</li><li><figref idref="f0002">Figure 3</figref> is a schematic representation of a step of the process for obtaining an element of the percolated layer of the device of <figref idref="f0001">Figure 1</figref>;</li><li><figref idref="f0002">Figure 4</figref> is a schematic lateral section of an electroluminescent device made according to a possible variant of the present invention.</li></ul>
Detailed description of the invention
0015In <figref idref="f0001">Figures 1 and 2</figref> number 1 globally refers to a device for emitting light by electron tunneling effect, made according to the invention, which comprises four main parts, and namely: <ul id="ul0003" list-style="dash" compact="compact"><li>a transparent substrate, referred to with 2,</li><li>a three-dimensional percolated metal layer, referred to with 3,</li><li>at least two metal electrodes, referred to with 4' and 4", and</li><li>a protective layer, referred to with 5.</li></ul>
0016As can be seen in particular in <figref idref="f0001">Figure 2</figref>, the two electrodes 4', 4" are provided with interdigitated conductive tracks, referred to with 4A' and 4A", between which the layer 3 is deposited. The electrodes 4', 4" are provided to establish the electric contact between a supply generator, schematically referred to with 6 in <figref idref="f0001">Figure 2</figref>, and the three-dimensional percolated layer 3.
0017According to the invention, the percolated layer 3 is obtained by infiltration of metal particles into a templating element having an architecture of the three-dimensional photonic crystal type, namely having an opal-like structure.
0018The layer 3 is obtained starting from an organic or inorganic templating frame consisting of monodispersed nanospheres having a diameter of 80 to 200 nanometers; one of said spheres is schematically shown in <figref idref="f0002">Figure 3</figref>, where it is referred to with S. The spheres S can be made of SiO<sub>2</sub> or latex (polystyrene) and obtained by polymerization in aqueous solution of a suitable precursor.
0019In said solution the nanospheres S are dispersed, having the desired diameter, which according to the invention are provided with a suitable "shell" of metal nanoparticles. To said purpose, a salt of the desired metal is dissolved in the aforesaid solution and then undergoes a chemical reduction by UV rays, heat treatment or reaction with hydrogen. The metal thus shifts from n+ valence to zero valence and turns into particles, referred to with P in <figref idref="f0002">Figure 3</figref>, having a diameter of few nanometers, which surround the nanospheres S. The result is thus a structure designed as core shell, globally referred to with CS in <figref idref="f0002">Figure 3</figref>.
0020The various core shells CS are then assembled together, for instance by forced sedimentation, thus obtaining the desired three-dimensional percolated structure provided with metal-free spaces whose size is in the order of wavelength. The distance between the metal nanoparticles P covering the nanospheres S is in the order of one nanometer.
0021After the aforesaid three-dimensional percolated structure has been obtained, the nanospheres S can be kept within said structure, or removed from the latter, after a specific chemical-physical treatment, so as to obtain a structure called hollow core shell. In this second case, if the nanospheres are made of polystyrene, the removal thereof can be achieved by heat treatment; if said nanospheres are made of SiO<sub>2</sub>, they can be removed from the three-dimensional structure by treatment with diluted hydrofluoric acid.
0022In the preferred use described here, electrons streaming by tunnel effect through a three-dimensional percolated metal structure as obtained above are exploited for exciting electroluminescence phenomena in electroluminescent particles included in said structure. Said particles can be made of rare-earth oxides, nanoparticles of semiconductors, electroluminescent polymers. As was said, the metal-free spaces of the three-dimensional percolated metal structure have a size around wavelength, such as to help the spontaneous emission of visible radiation from the nanoparticles included therein.
0023In order to include rare-earth oxides, or semiconductors in general, into the structure 3 the aqueous solution of the core shells CS is added with the respective precursors and a suitable chemical reaction is performed. Here is a list of possible techniques:
Humid impregnation with semiconductors
0024In this case the solution of the core shells CS is added with an aqueous solution of a salt of the selected semiconductor, such as Zn<sup>2+</sup> or Cd<sup>2+</sup>. Then an aqueous solution of sodium sulfide or selenourea is added and the whole is stirred for some minutes. Thus, nanoparticles of the selected semiconductor are built, such as CdS, ZnS, CdSe, etc., which spread into the interstices created between one core shell and the other during sedimentation, and/or build a further outer shell embedding the core shell CS. Said nanoparticles behave as luminescent spots, designed to be excited by electron tunneling.
Gas impregnation with semiconductors
0025Here again, the solution of the core shells CS is added with an aqueous solution of a salt of the selected semiconductor, such as Zn<sup>2+</sup>, Cd<sup>2+</sup>, etc. Sulfide or telluride ion is then developed as gas (H<sub>2</sub>S or H<sub>2</sub>Te) by dripping sulfuric acid into a flask containing Na<sub>2</sub>S or Al<sub>2</sub>Te<sub>3</sub>. The gas gets in contact with Zn<sup>2+</sup> or Cd<sup>2+</sup> and reacts with them so as to build semiconductor nanoparticles of semiconductor (CdS, ZnS, CdTe, etc.). Said semiconductor nanoparticles spread into the interstices between one core shell and the other and/or build a further outer shell embedding the core shell CS.
Impregnation with rare-earth oxides
0026In this case the solution of the core shells CS is added with an aqueous solution of a salt of the selected rare earth, such as Tb<sup>3+</sup>, Eu<sup>3+</sup> or Er<sup>3+</sup>. After deposition onto the substrate 4, a heat treatment turns the salt into an electroluminescent oxide.
0027If the excitable particles are electroluminescent polymers, their inclusion into the film of the core shells CS takes place after the latter has been laid onto the substrate 2. To this purpose, therefore, after being deposited onto the substrate 2, the film of the core shells CS is impregnated with an electroluminescent polymer using techniques depending on the type of polymer to be used, such as spin coating, dip coating, spraying, screen printing, evaporation.
0028The substrate 2 is preferably transparent to light and to this purpose glass or a suitable synthetic material can be used.
0029The electrodes 4', 4" with interdigitated tracks consist of a continuous metal layer, for instance made of copper, silver, gold or aluminum, and are deposited onto the substrate 4 by evaporation techniques, such as sputtering, thermal evaporation or electron-beam, or by serigraphy.
0030The subsequent deposition of the three-dimensional layer 3 of core shells CS, impregnated or to be impregnated with the electroluminescent particles, can take place by different techniques, such as spraying, dip coating, screen printing.
0031The device 1 is then completed by the layer 5 so as to be protected against oxidation; deposition methods depend on the type of layer 5 used, for instance dip coating or spraying for an epoxy resin, sol gel for an inorganic oxide, screen printing, UV polymerization.
0032A getter (for instance barium-aluminum, zirconium-vanadium-iron, zirconium-graphite alloys, etc.) is provided for beyond the transparent layer 5. In the case shown by way of example in <figref idref="f0001">Figure 1</figref>, getter inclusions, referred to with 7, are embedded into the protective layer 5 deposited as cover for the device 1.
0033Alternatively, as can be seen in the variant of <figref idref="f0002">Figure 4</figref>, the getter referred to with 7' is deposited as a layer directly onto the substrate 2 by using a convenient technique, such as evaporation, sputtering, dip coating, spraying, screen coating. In this case, the getter 7' is designed not only to prevent oxidation, but also to improve the adhesion of the electrodes 4', 4" and of the active material 3 on the substrate 2.
0034The device 1 operates as follows.
0035The electrodes 4', 4" establish the electric contact between the supply generator 6 of the device 1 and the three-dimensional percolated metal structure 3 including the electroluminescent particles. The electrodes 4', 4" then generate a potential difference resulting in a transport of electric charge through the layer 3. If applied voltage is high enough to give rise to very strong local electric fields (E ≈ 10<sup>7</sup> V/cm), within the metal layer 3 percolation is accompanied by electron conduction by tunnel effect, which enables to excite the luminescent inclusions and to emit light, as schematically shown by some lobes referred to with 8 in <figref idref="f0001">Figures 1</figref> and <figref idref="f0002">4</figref>.
0036Obviously, though the basic idea of the invention remain the same, construction details and embodiments can vary with respect to what has been described and shown by mere way of example.
3 sheets
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Every citation, both ways
| Document | Relation | Office |
|---|---|---|
| EP1309013A | Cites | European Patent Office (EPO) |
| WO03003982A | Cites | World Intellectual Property Organization (WIPO) |
| WO03058728A | Cites | World Intellectual Property Organization (WIPO) |
| US6479146B1 | Cites | United States of America |
| LI PIRA N ET AL: "MODELLING AND EXPERIMENTAL EVIDENCE OF QUANTUM PHENOMENA IN METALLIC NON-CONTINUOUS FILMS (METAL QUANTUM WIRE NETWORK - MQWN -)" PROCEEDINGS OF THE EUSPEN. INTERNATIONAL CONFERENCE, XX, XX, vol. 1, 27 May 2001 (2001-05-27), pages 212-215, XP008014567 | Non-patent | – |
| COLVIN V L ET AL: "LIGHT-EMITTING DIODES MADE FROM CADMIUM SELENIDE NANOCRYSTALS AND ASEMICONDUCTING POLYMER" NATURE, MACMILLAN JOURNALS LTD. LONDON, GB, vol. 370, no. 6488, 4 August 1994 (1994-08-04), pages 354-357, XP000466647 ISSN: 0028-0836 | Non-patent | – |
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| CN1671261A | China | A | |
| EP1577957A1 | European Patent Office (EPO) | A1 | |
| US2005206300A1 | United States of America | A1 | |
| JP2005268219A | Japan | A | |
| US7381994B2 | United States of America | B2 | |
| EP1577957B1This record | European Patent Office (EPO) | B1 | |
| AT431620T | Austria | T | |
| ATE431620T1 | Austria | T1 | |
| DE602004021086D1 | Germany | D1 | |
| CN1671261B | China | B |
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Numbers
- Publication
- 1577957
- Application
- 44251932
Titles3
- German
- Leuchtelement, das eine dreidimensionale Perkolationsschicht verwendet, und Herstellungsverfahren dafür
- English
- Light emitting device using a three-dimension percolated layer, and manufacturing process thereof
- French
- Dispositif électroluminescent utilisant une couche de percolation tri-dimensionnelle, et son procédé de fabrication
Classification
- CPC, 3
- H05B33/145
- B82Y20/00
- B82Y30/00
- IPC, 14
- H01L33 00
- H05B33 14
- C09K11 00
- C09K11 06
- C09K11 08
- C09K11 56
- C09K11 78
- C09K11 88
- H01J1 62
- H05B33 10
- H05B33 12
- H05B33 20
- H05B33 26
- H05B44 00
Designated states28
- Contracting states, 28
- Austria
- Belgium
- Bulgaria
- Switzerland
- Cyprus
- Czechia
- Germany
- Denmark
- Estonia
- Spain
- Finland
- France
- United Kingdom
- Greece
- Hungary
- Ireland
- Italy
- Liechtenstein
- Luxembourg
- Monaco
- Netherlands (Kingdom of the)
- Poland
- Portugal
- Romania
and 4 moreShow fewer
- Sweden
- Slovenia
- Slovakia
- Türkiye