Nova Patents
EP1577933A3

Method of manufacturing single-crystal GaN substrate, and single-crystal GaN substrate

Abstract

Manufacture at lower cost of off-axis GaN single-crystal freestanding substrates having a crystal orientation that is displaced from (0001) instead of (0001) exact. With an off-axis (111) GaAs wafer as a starting substrate, GaN is vapor-deposited onto the starting substrate, which grows GaN crystal that is inclined at the same off-axis angle and in the same direction as is the starting substrate. Misoriented freestanding GaN substrates may be manufactured, utilizing a misoriented (111) GaAs baseplate as a starting substrate, by forming onto the starting substrate a mask having a plurality of apertures, depositing through the mask a GaN single-crystal layer, and then removing the starting substrate. The manufacture of GaN crystal having a misorientation of 0.1° to 25° is made possible.

Term

Term ended

Projected expiry passed 10 March 2025, 1.5 years ago.

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Every citation, both ways

Citations
DocumentRelationOfficeCategoryCited duringRelevant claims
WO0168955A1CitesWorld Intellectual Property Organization (WIPO)XSearch report10-16
KIRILYUK V ET AL: "Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 230, no. 3-4, 1 September 2001 (2001-09-01), pages 477 - 480, XP004296555, ISSN: 0022-0248Non-patent––Search report–
GEORGAKILAS A ET AL: "MBE GROWTH OF DIFFERENT HEXAGONAL GAN CRYSTAL STRUCTURES ON VICINAL (100) GAAS SUBSTRATES", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B82, no. 1-03, 22 May 2001 (2001-05-22), pages 16 - 18, XP001150270, ISSN: 0921-5107Non-patent––Search report–
MOTOKI K ET AL: "Preparation of large GaN substrates", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 93, no. 1-3, 30 May 2002 (2002-05-30), pages 123 - 130, XP004351260, ISSN: 0921-5107Non-patent––Search report–
ZAUNER A R A ET AL: "Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 210, no. 4, 1 March 2000 (2000-03-01), pages 435 - 443, XP004191355, ISSN: 0022-0248Non-patent––Search report–
ZAUNER A R A ET AL: "Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 240, no. 1-2, 1 April 2002 (2002-04-01), pages 14 - 21, XP004351387, ISSN: 0022-0248Non-patent––Search report–