EP1577009A1

Method for forming photocatalyst apatite film

Abstract

A method for forming a photocatalytic apatite includes a target production step (S12) for producing a sputtering target that contains photocatalytic apatite, and a sputtering step (S13) for forming a photocatalytic apatite film on a substrate by sputtering using the target. A firing step (S11) for firing the photocatalytic apatite is conducted before the sputtering step so as to increase the crystallinity of the photocatalytic apatite.

EP1577009A1, drawing sheet 1
Sheet 1 of 7

Term

Term ended

Projected expiry passed 27 December 2022, 3.7 years ago.

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18 claims: 2 independent, 16 dependent

  1. 1
    A method for forming a photocatalytic apatite film, comprising:a target production step for producing a sputtering target that contains photocatalytic apatite;and a sputtering step for forming a photocatalytic apatite film on a substrate by sputtering using said target,    wherein a firing step for firing the photocatalytic apatite is conducted before the sputtering step so as to increase the crystallinity of the photocatalytic apatite.
  2. 2
    The method for forming a photocatalytic apatite film according to Claim 1, wherein the firing step is performed on powdered photocatalytic apatite prior to the target production step.
  3. 3
    The method for forming a photocatalytic apatite film according to Claim 1, wherein a sintering treatment is performed on the photocatalytic apatite in the target production step, and said sintering treatment includes the firing step.
  4. 4
    The method for forming a photocatalytic apatite film according to Claim 1, wherein the photocatalytic apatite is fired at 550°C or higher in the firing step.
  5. 5
    The method for forming a photocatalytic apatite film according to Claim 1, further comprising an additional firing step for firing the photocatalytic apatite film formed on the substrate after the sputtering step so as to increase the crystallinity of the photocatalytic apatite.
  6. 6
    The method for forming a photocatalytic apatite film according to Claim 5, wherein the photocatalytic apatite is fired at 550°C or higher in the additional firing step.
  7. 7
    The method for forming a photocatalytic apatite film according to Claim 1, wherein the photocatalytic apatite is sintered at 100 to 500°C in the target production step.
  8. 8
    The method for forming a photocatalytic apatite film according to Claim 1, wherein the photocatalytic apatite film is formed at a gas pressure of 0.27 to 3Pa and a substrate temperature of at least 100°C in the sputtering step.
  9. 9
    The method for forming a photocatalytic apatite film according to Claim 1, wherein argon gas is used as the sputtering gas in the sputtering step.
  10. 10
    The method for forming a photocatalytic apatite film according to Claim 1, wherein the photocatalytic apatite has a chemical structure in which part of the calcium of calcium hydroxyapatite has been substituted with titanium.
  11. 11
    The method for forming a photocatalytic apatite film according to Claim 10, wherein the proportion of titanium in the combined calcium and titanium in the photocatalytic apatite is from 3 to 11mol%.
  12. 12
    A method for forming a photocatalytic apatite film, comprising:a target production step for producing a sputtering target that contains photocatalytic apatite;a sputtering step for forming a photocatalytic apatite film on a substrate by sputtering using said target;and a firing step for firing the photocatalytic apatite film formed on the substrate so as to increase the crystallinity of the photocatalytic apatite.
  13. 13
    The method for forming a photocatalytic apatite film according to Claim 12, wherein the photocatalytic apatite is fired at 550°C or higher in the firing step.
  14. 14
    The method for forming a photocatalytic apatite film according to Claim 12, wherein the photocatalytic apatite is sintered at 100 to 500°C in the target production step.
  15. 15
    The method for forming a photocatalytic apatite film according to Claim 12, wherein the photocatalytic apatite film is formed at a gas pressure of 0.27 to 3.0Pa and a substrate temperature of at least 100°C in the sputtering step.
  16. 16
    The method for forming a photocatalytic apatite film according to Claim 12, wherein argon gas is used as the sputtering gas in the sputtering step.
  17. 17
    The method for forming a photocatalytic apatite film according to Claim 12, wherein the photocatalytic apatite has a chemical structure in which part of the calcium of calcium hydroxyapatite has been substituted with titanium.
  18. 18
    The method for forming a photocatalytic apatite film according to Claim 17, wherein the proportion of titanium in the combined calcium and titanium in the photocatalytic apatite is from 3 to 11mol%.
Independent claims18