EP1563545A2

Field effect transistor with functionalised nanotube and corresponding manufacturing method.

Abstract

A field effect transistor and a method for making the same. In one embodiment, the field effect transistor comprises a source; a drain; a gate; at least one carbon nanotube on the gate; and a dielectric layer that coats the gate and a portion of the at least one carbon nanotube, wherein the at least one carbon nanotube has an exposed portion that is not coated with the dielectric layer, and wherein the exposed portion is functionalized with at least one indicator molecule. In other embodiments, the field effect transistor is a biochem-FET.

Term

Term ended

Projected expiry passed 19 November 2023, 2.8 years ago.

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Citations
DocumentRelationOfficeCited during
WO0161753A1CitesWorld Intellectual Property Organization (WIPO)Search report
DE10036897C1CitesGermanySearch report