EP1547102A2

Nanocrystalline layers and improved mram tunnel junctions

Abstract

An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element with a crystallographically disordered seed layer and/or template layer seeding the nanocrystalline growth of subsequent layers, including a pinning layer, a pinned layer, and fixed layer.

Term

Term ended

Projected expiry passed 24 July 2023, 3.2 years ago.

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19 members in 10 offices

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Priority claims
DocumentOfficeKindDate
232111United States of America
23211102United States of AmericaA
0323063United States of AmericaW

Members19

Family members, oldest first
DocumentOfficeKind
US2004042128A1United States of AmericaA1
TW200405335ATaiwan Province of ChinaA
US6801415B2United States of AmericaB2
WO2004107370A2World Intellectual Property Organization (WIPO)A2
AU2003304170A1AustraliaA1
AU2003304170A8AustraliaA8
WO2004107370A3World Intellectual Property Organization (WIPO)A3
KR20050036985ARepublic of KoreaA
EP1547102A2This recordEuropean Patent Office (EPO)A2
CN1679121AChinaA
JP2006506828AJapanA
EP1547102B1European Patent Office (EPO)B1
AT361536TAustriaT
ATE361536T1AustriaT1
DE60313636D1GermanyD1
DE60313636T2GermanyT2
CN100339915CChinaC
TWI311754BTaiwan Province of ChinaB
KR101036124B1Republic of KoreaB1