EP1544906A4
Method and device for laser beam processing of silicon substrate, and method and device for laser beam cutting of silicon wiring
Abstract
This record has no abstract on file.
Term
Term ended
Projected expiry passed 28 July 2023, 3.2 years ago.
- Priority
- Filed
- Published
- Projected expiry
- Today
4 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4
Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| DE10012840A1 | Cites | Germany | – | Search report | – |
| US4532401A | Cites | United States of America | – | Search report | – |
| US5800725A | Cites | United States of America | – | Search report | – |
| JPH08191038A | Cites | Japan | X | Search report | 1,2,4,6,8,10 |
| JP8191038A | Cites | Japan | – | – | – |
| See also references of WO 2004012253A1 | Non-patent | – | – | Search report | – |
6 members in 5 offices; this record represents the family
Priority claims3
| Document | Office | Kind | Date |
|---|---|---|---|
| 2002220036 | Japan | – | |
| 2002220036 | Japan | A | |
| 0309557 | Japan | W |
Members6
| Document | Office | Kind | |
|---|---|---|---|
| WO2004012253A1 | World Intellectual Property Organization (WIPO) | A1 | |
| AU2003252278A1 | Australia | A1 | |
| JP2004074279A | Japan | A | |
| EP1544906A1 | European Patent Office (EPO) | A1 | |
| US2005150877A1 | United States of America | A1 | |
| EP1544906A4This record | European Patent Office (EPO) | A4 |
10 legal events, as the office reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | |
|---|---|---|
| Application withdrawnWithdrawn18W | 18W | |
| First examination report despatched17Q | 17Q | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION HAS BEEN WITHDRAWNSTAA | STAA | |
| Supplementary search report drawn up and despatchedA4 | A4 | |
| Request for extension of the european patent (deleted)DAX | DAX | |
| Designated contracting states (corrected)RBV | RBV | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAX | AX | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1544906
- Application
- 37713914
Titles3
- German
- VERFAHREN UND EINRICHTUNG ZUR LASERSTRAHLVERARBEITUNG EINES SILIZIUMSUBSTRATS UND VERFAHREN UND EINRICHTUNG ZUM LASERSTRAHLSCHNEIDEN EINER SILIZIUMVERDRAHTUNG
- English
- METHOD AND DEVICE FOR LASER BEAM PROCESSING OF SILICON SUBSTRATE, AND METHOD AND DEVICE FOR LASER BEAM CUTTING OF SILICON WIRING
- French
- PROCEDE ET DISPOSITIF DE TRAITEMENT PAR FAISCEAU LASER DE SUBSTRAT DE SILICIUM, ET PROCEDE ET DISPOSITIF DE DECOUPE PAR FAISCEAU LASER DE CABLAGE EN SILICIUM
Classification
- CPC, 8
- H10D84/212
- B23K26/60
- B23K26/40
- B23K2101/40
- B23K2103/50
- H10D84/209
- H10W20/068
- H10W20/494
- IPC, 11
- H01L21 3205
- H01L21 822
- H01L27 04
- H01L21 82
- C30B33 08
- C30B29 06
- B23K26 40
- B23K26 42
- H01L21 768
- H01L27 08
- H10W20 49
Designated states1
- Contracting states, 1
- United Kingdom