Self-reparable semiconductor
Abstract
A self-reparable semiconductor includes multiple functional units that perform the same function and that include sub-functional units. The semiconductor includes one or more full or partial spare functional units that are integrated into the semiconductor. If a defect in a sub-functional unit is detected, then that sub-functional unit is switched out and replaced with a sub-functional unit in the full or partial spare functional unit. The reconfiguration is realized with switching devices that are associated with the sub-functional units. Defective functional or sub-functional units can be detected after assembly, during power up, periodically during operation, and/or manually.

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Every citation, both ways
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| US5655069A | Cites | United States of America | A | Search report | 1-20 |
| US6091258A | Cites | United States of America | X | Search report | 1-20 |
| WO9932975A1 | Cites | World Intellectual Property Organization (WIPO) | X | Search report | 1-20 |
35 members in 6 offices
Priority claims4
| Document | Office | Kind | Date |
|---|---|---|---|
| 531023P | United States of America | – | |
| 53102303 | United States of America | P | |
| 892707 | United States of America | – | |
| 89270704 | United States of America | A |
Members35
| Document | Office | Kind | |
|---|---|---|---|
| CN1505151A | China | A | |
| TW200409928A | Taiwan Province of China | A | |
| EP1434134A2 | European Patent Office (EPO) | A2 | |
| JP2004214619A | Japan | A | |
| US2004153752A1 | United States of America | A1 | |
| US2005015660A1 | United States of America | A1 | |
| CN1630082A | China | A | |
| EP1544740A2 | European Patent Office (EPO) | A2 | |
| TW200522464A | Taiwan Province of China | A | |
| JP2005183929A | Japan | A | |
| EP1434134A3 | European Patent Office (EPO) | A3 | |
| US2006001669A1 | United States of America | A1 | |
| US7185225B2 | United States of America | B2 | |
| US2007055845A1 | United States of America | A1 | |
| US2007055906A1 | United States of America | A1 | |
| US2007055907A1 | United States of America | A1 | |
| CN1310326C | China | C | |
| TWI281547B | Taiwan Province of China | B | |
| US7313723B2 | United States of America | B2 | |
| US7340644B2 | United States of America | B2 | |
| US7373547B2 | United States of America | B2 | |
| US2008215914A1 | United States of America | A1 | |
| EP1544740A3This record | European Patent Office (EPO) | A3 | |
| CN100576536C | China | C | |
| US7657784B2 | United States of America | B2 | |
| US7730349B2 | United States of America | B2 | |
| EP1544740B1 | European Patent Office (EPO) | B1 | |
| DE602004027592D1 | Germany | D1 | |
| TWI359546B | Taiwan Province of China | B | |
| JP2012119713A | Japan | A | |
| JP4963782B2 | Japan | B2 | |
| US2013124918A1 | United States of America | A1 | |
| JP5571709B2 | Japan | B2 | |
| US8812905B2 | United States of America | B2 | |
| EP1434134B1 | European Patent Office (EPO) | B1 |
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Numbers
- Publication
- 1544740
- Application
- 40207755
Titles3
- German
- Selbstreparierender Halbleiter
- English
- Self-reparable semiconductor
- French
- semiconducteur auto réparable
Classification
- CPC, 5
- G01R31/317
- G01R31/31718
- G01R31/3172
- G11C29/848
- H10P74/232
- IPC, 8
- G06F11 20
- H01L21 66
- H01L21 822
- H01L21 00
- H01L21 82
- H01L27 00
- H01L27 04
- H03K19 177
Designated states33
- Contracting states, 28
- Austria
- Belgium
- Bulgaria
- Switzerland
- Cyprus
- Czechia
- Germany
- Denmark
- Estonia
- Spain
- Finland
- France
- United Kingdom
- Greece
- Hungary
- Ireland
- Italy
- Liechtenstein
- Luxembourg
- Monaco
- Netherlands (Kingdom of the)
- Poland
- Portugal
- Romania
and 4 moreShow fewer
- Sweden
- Slovenia
- Slovakia
- Türkiye
- Extension states, 5
- Albania
- Croatia
- Lithuania
- Latvia
- North Macedonia