Feature optimization of reticle structures using enhanced interference mapping
Abstract
Disclosed concepts include a method of, and program product for, optimizing an intensity profile of a pattern to be formed in a surface of a substrate relative to a given mask using an optical system. Steps include mathematically representing resolvable feature(s) from the given mask, generating a mathematical expression, an eigenfunction, representing certain characteristics of the optical system, modifying the mathematical the eigenfunction by filtering, generating an interference map in accordance with the filtered eigenfunction and the mathematical expression of the given mask, and determining assist features for the given mask based on the interference map. As a result, undesired printing in the surface of the substrate may be minimized.

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1 sheet
Sheet 1
Every citation, both waysCites: the store holds 2 of 3
| Document | Relation | Office | Category | Cited during | Relevant claims |
|---|---|---|---|---|---|
| US2003082463A1 | Cites | United States of America | Y | Search report | 1-6,9-15,18-24,27,28 |
| US6413684B1 | Cites | United States of America | YX | Search report | 1,10,19,28 |
| BROEKE VAN DEN D ET AL: "Near 0.3 k1 full pitch range contact hole patterning using Chromeless Phase Lithography (CPL)", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 5256, 9 September 2003 (2003-09-09), pages 297 - 308, XP002353565, ISSN: 0277-786X | Non-patent | – | – | Search report | – |
12 members in 6 offices
Priority claims5
| Document | Office | Kind | Date |
|---|---|---|---|
| 515708P | United States of America | – | |
| 51570803 | United States of America | P | |
| 51570803 | United States of America | P | |
| 515708P | – | – | – |
| US20030515708P | – | – | – |
Members12
| Document | Office | Kind | |
|---|---|---|---|
| EP1528429A2 | European Patent Office (EPO) | A2 | |
| KR20050041958A | Republic of Korea | A | |
| JP2005141241A | Japan | A | |
| CN1629735A | China | A | |
| US2005149900A1 | United States of America | A1 | |
| TW200527152A | Taiwan Province of China | A | |
| EP1528429A3This record | European Patent Office (EPO) | A3 | |
| US7231629B2 | United States of America | B2 | |
| KR100927454B1 | Republic of Korea | B1 | |
| CN100576066C | China | C | |
| TWI377438B | Taiwan Province of China | B | |
| JP5121117B2 | Japan | B2 |
11 legal events, as the office reported them to INPADOC
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|---|---|---|
| Application deemed to be withdrawnWithdrawn18D | 18D | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWNSTAA | STAA | |
| Designation fees paidAKX | AKX | |
| First examination report despatched17Q | 17Q | |
| Request for examination filed17P | 17P | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAX | AX | |
| Search report despatchedORIGINAL CODE: 0009013PUAL | PUAL | |
| Designated contracting statesAK | AK | |
| Request for extension of the european patentAX | AX | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI |
Numbers
- Publication
- 1528429
- Publication, DOCDB
- 1528429
- Publication, EPODOC
- EP1528429
- Application
- 4256714
- Application, DOCDB
- 04256714
- Application, EPODOC
- EP20040256714
Titles3
- German
- Optimierung von Strukturen auf Photomasken mittels Simulation des projezierten Musters
- English
- Feature optimization of reticle structures using enhanced interference mapping
- French
- Procédé d'évaluation d'images de réticule au moyen d'un simulateur d'images aériennes
Classification
- CPC, 3
- G03F1/36
- G03F7/70441
- G03F7/705
- IPC, 4
- G03F1 14
- G03F1 00
- G03F1 36
- H01L21 027
Designated states2
- Contracting states, 1
- Türkiye
- Extension states, 1
- North Macedonia