Active matrix device

In order to provide an active matrix device in which parasitic capacitance or the like is suppressed by forming a thick insulating film around an organic semiconductor film and disconnection or the like does not occur in the opposing electrode formed on the upper layer of the thick insulating film, in an active matrix display device (1), first, a bank layer (bank) composed of a resist film is formed along data lines (sig) and scanning lines (gate), and by depositing an opposing electrode (op) of a thin film luminescent element (40) on the upper layer side of the bank layer (bank), capacitance that parasitizes the data lines (sig) can be suppressed. Additionally, a discontinuities portion (off) is formed in the bank layer (bank). Since the discontinuities portion (off) is a planar section which does not have a step due to the bank layer (bank), disconnection of the opposing electrode (op) does not occur at this section. When an organic semiconductor film (43) is formed by an ink jet process, a liquid material discharged from an ink jet head is blocked by the bank layer (bank).