System for managing wireless network activity

Description of equivalent WO 03000559 A1

0001Specification '

0002D L C film coatee The manufacture device of a Wing Plus tic container, D L C film Cau Tee A Wing Plus tic container and a manufacturing method for the same Technical field

0003the present invention and plasma C V D (Chemical Vapor Deposition, chemicals vapor phase epitaxy) -- a method -- the inner wall surface or outer wall surface of a plastic container -- D L C (diamond like carbon) It is a device which produces a film. high frequency (R F) which is especially an ion energy control means, and plasma -- dense Use simultaneously microwave (MW) which is a degree control means. Moisture Depositing a quality D L C film from a viewpoint of - Gas barrier nature at high speed Possible D L C film coatee It is the present invention, concerning the manufacture device of a Wing Plus tic container, The above-mentioned D L C film coatee Manufacture of a Wing Plus tic container It is Co 1 tee about a D L C film to a method and an outer wall surface. D L C film Cau Tin who did Tongue It is related with a Gupras tic container. Background art

0004It is improvement in gas-barrier-property Hitoshi as containers, such as a carbonated drink and a high fruit-flavored drink container. The film production device which used the plasma C V D method in order to produce a D L C film on the inner wall surface of a plastic container for the object is Provisional Publication No. 8. -- 5 3 1 1 Public No. 7 It is indicated by news. This D L C film coatee Wing Plus tic container A manufacture device is a high frequency capacitive coupling type electric discharge method, and has the following feature. That is, it has a blank which stores a container and this blank forms a vacuum room. It forms in similar figures mostly with the outside of the container in which the wall part of a blank is stored. Exterior electrode of the hollow shape carried out, the inside of the blank of this exterior electrode -- a container -- accommodation -- An exterior electrode is insulated while the oral region of this container is contacted in the Was done case. Insulating member, To the inner side of the container which was grounded and was stored in the blank of an exterior electrode Internal electrode which is carried out from the oral region of a container as for * ON, the inside of the blank of an exterior electrode -- a free passage -- Are accommodated in the exhaust means which performs the exhaust air in a Have been blank, and the blank of an exterior electrode. It has the feeding means which supplies material gas inside Container, and the high frequency power supply connected to the exterior electrode. In the above-mentioned gazette, high frequency is used as a plasma generation energy source. High frequency Although it is an idiom, generally it is 1. 0 0 kH z* l 0 0 By the electromagnetic waves of 0 MH z It is. There is no statement of concrete frequency in the above-mentioned gazette. Are general. 1 whose high frequency is the frequency for industry 3. 5 6 MH z is used.

0005With the above-mentioned gazette, it is inside of a chamber 1 0 --²* 1 0 _⁵t o r r -- Vacuum drawing introducing material gas after attributing -- 0.5*0.0 0 It is regulation to 1 t o r r. it carries out -- high frequency electric power -- 5 [ for example, ] 0*1 0 0 0 W impression of is done -- Plastic The D L C film is produced on the wall surface in a The container. D The film thickness of a L C film is 0.0. It forms so that it may be set to 5* 5 m.

0006on the other hand, microwave is used as a plasma generation energy source -- a plastic container -- a D L C film -- coatee Depart of the device which carries out Tongue and to manufacture Ming -- W09 9/4 9 9 9 It is indicated by 1. this device -- microphone it is a Mouth wave electric discharge method -- the insulating member which insulates the blank which stores the container used as a vacuum room, an exterior electrode, and an exterior electrode, an exhaust means, a material gas supply means, and Ma A Excitation wave power supply is provided. this gazette -- the microwave of UH F field (3 0 0* 3 0 0 0 MH z), for example, 2.4, the microwave of 5 G H z -- several -- doing 100 W impression of and microwave -- a waveguide -- connoisseur Carrying out and being introduced into a chamber is indicated. It is business about microwave. It is Provisional Publication No. 8_5 by it being. 3 1 1 Uchibe Electricity indispensable to the invention of No. 7 gazette The pole supposes that it is unnecessary. It is inside of a chamber 0.0 1*0.5 It is 3 at 0 t o r r. 0 The D L C film below 0 O A is formed in the wall surface in a container, or an outer wall surface. The indication of an invention

0007However, it is in the above-mentioned art, without solving the following problems. That is, generally with a high frequency capacitive coupling type electric discharge method, plasma density is 1. 0⁹c m_³until, and plasma density cannot be raised -- plasma density Control and control of ion energy cannot be carried out to independence, either. if high frequency is made into high power in order to raise plasma density -- an ion collision -- many -- it emits -- the etching effect also becomes large. Therefore, by a high frequency capacitive coupling type electric discharge method, film production speed cannot be made quick. For this reason, short time It is a D L C film coatee to a lot of containers. It is manufacturing efficiency when performing Tongue. It is necessary to raise by another means. supply of a high frequency output Self-Bias voltage occurs on a plastic container wall surface -- it plasma-ized -- original -- a charge can draw near to a plastic container wall surface -- an ion bombardment arises. while a comparatively precise D L C film is obtained -- control of ion energy since it cannot do appropriately, an ion bombardment is large -- a plastic Temperature rising The internal stress by a thermal expansion difference occurs, and a detailed crack may arise. this -- It becomes a cause of generating of the film exfoliation by the fall of detailed crack and moisture and Gas barrier nature, and washing of a plastic container.

0008On the other hand with a microwave discharge method, it is plasma density 1 0"* 1 0¹²c m1³the materials in which high concentration was ionized since it did with high density -- bra the Stick surface can be supplied -- it comes out to make film production speed quick It cuts. However, self-bias voltage occurs on a plastic container wall surface. Since an ion bombardment does not arise, either without the ability of the ionized materials to draw near to a plastic surface since there is nothing, a precise D L C film is obtained. Stake. Therefore, it is moisture - from the D L C film which produced the film by the high frequency capacitive coupling type electric discharge method. It is thought that Gas barrier nature is low. Equivalent water The necessity of enlarging film thickness in order to secure a part and Gas barrier nature is Ah. To. The result studied wholeheartedly that the characteristic problem which these artificers and the two above-mentioned manufacturing methods have should be solved, a high frequency capacitive coupling type electric discharge method and micro combining a wave electric discharge method effectively -- the film production mechanism of an all directions method -- different -- The film production mechanism which produces a quality film with sufficient productivity was discovered, and the present invention was completed. namely, this film production mechanism -- microwave the ion which arises by the plasma which made it generate is originated in high frequency -- self--- oneself bias -- the outer wall surface or inner wall surface of a plastic container -- strong -- Made * Draw in system and it is a mechanism to carry out about a D L C film.

0009It is possible to produce a D L C film uniformly to the first object of the present invention and the outer wall surface of a plastic container, plastic Capacity which is a substance for a film to be produced great thermal load is not given to a vessel -- generating of a membranous detailed crack is deterred A thing and D L C film coatee which can produce a precise D L C film at a high film production speed Provide the manufacture device of a Wing Plus tic container. it is . ，

0010here -- the D L C film of the present invention -- an i power 1 Bon film or hydrogenation Amorph it is a film called a Haska 1 Bon film (a -- C : H) -- hard charcoal base -- a film is also contained. A D L C film is an amorphous-like carbon film, and is S P.³Combination and S P²It also has combination. The D L C film containing a silicon S i element is also included.

0011viewpoint [ film / precise / as used in the field of the present invention / D L C ] that density is large there is nothing -- gas molecules, such as oxygen, hydrogen, carbon dioxide, nitrogen, or an organic molecule The product of the solubility coefficient to the inside of a film and the diffusion coefficient of a gas molecule means a small D L C film.

0012moisture as used in the field of the present invention and Gas barrier nature -- the above-mentioned gas molecule product of the solubility coefficient to the inside of a film, and the diffusion coefficient of a gas molecule (precise nature), and a film -- fine -- The character decided by the amount of thin cracks and film thickness is said. moisture' gas barricade The of that a D L C film ideal from a viewpoint of A nature is precise, and a film film thickness is [ that there are few amounts of racks, and ] in predetermined thickness within the limits -- Satisfied It is To. When it is precise and there are few membranous amounts of cracks, it is required film thickness. It can be made small. in addition -- general -- film thickness -- small I will pass and Cover of the Russ Chick surface cannot be carried out, but film thickness is too large. membranous internal stress becomes large -- it becomes impossible to follow in footsteps of pliability of a plastic moreover At the present invention, the film thickness of a D L C film is 3. 0*2 0 0 It is 5 preferably zero person. 0*1 0 It is 0 O A.

0013it sets to the second object of the present invention, and an above manufacture device -- the candidate for film production -- Ah In order that a To plastic container may enable accommodation of a plurality of contents independently the time of being the shape provided with the partition board -- a container outer wall surface -- D L C film Co 1 Te Inge is possible. D L C film Co which has the electrode structure of a high frequency bias electrode -- Tee It is providing the manufacture device of a Wing Plus tic container. It is possible to produce a D L C film uniformly on the third object of the present invention and the inner wall surface of a plastic container, plastic which is a substance for a film to be produced great thermal load is not given to a container -- This which deters generating of a detailed crack And thing for which the manufacture device of the D L C film Co 1 Tyng plastic container which can produce a precise D L C film at a high film production speed is provided It is.

0014Microwave is supplied in the fourth object of the present invention, and a vacuum chamber. At the same time it generates material gas system plasma in a vacuum chamber, High circumference A high frequency output is supplied to a wave bias electrode, and it is an outer wall surface of a plastic container. Self-bias voltage is generated, ion of a material gas system it draws to the outer wall surface of a plastic container -- plus which is a substance for a film to be produced tic -- a container -- without it gives great thermal load -- generating of a membranous detailed crack While deterring It is a container outer wall surface uniformly at a high film production speed about a precise D L C film. D L C film coatee which can produce a film Wing Plus tic container It is providing a manufacturing method.

0015The plastic container which are the fifth object of the present invention and a candidate for film production is plurality. It is Ah at the shape provided with the partition board for enabling accommodation of a content independently. At the time of To D L C film Co in which D L C film coating to a container outer wall surface is possible One tee It is providing the manufacturing method of a Wing Plus tic container. Microwave is supplied in the sixth object of the present invention, and a plastic container. Simultaneous, when it carries out and material gas system plasma is generated in a plastic container A high frequency output is supplied to a vacuum chamber, and it is an inner wall surface of a plastic container. Self-bias voltage is generated, the ion of a material gas system is drawn on the inner wall surface of a plastic container -- plus which is a substance for a film to be produced tic -- a container -- without it gives great thermal load -- generating of a membranous detailed crack While deterring It is a wall in a container uniformly at a big film production speed about a precise D L C film. D L C film Co 1 tee which can produce a film to a field Wing Plus tic container It is providing a manufacturing method.

0016It was which enables accommodation of the seventh object of the present invention, and a plurality of contents independently Because -- providing the plastic container which has moisture and Gas barrier nature, in spite of having the complicated form of having a partition board -- is there. It is a solving means for making each of above-mentioned objects achieve, and as follows. D L C film coatee concerning the present invention Manufacture device of a Wing Plus tic container Device smell which produces a D L C film to the outer wall surface of a plastic container The,

0017vacuum chamber by which it was grounded for storing the above-mentioned plastic container When

0018The inner wall surface of the above-mentioned plastic container is touched, or it is near this inner wall surface. High circumference installed via the insulator in the above-mentioned vacuum chamber so that it might be located Wave bias electrode,

0019introducing microwave in the above-mentioned vacuum chamber -- the vacuum Microwave supply means which generates material gas system plasma in a chamber When

0020self-bias voltage occurs in the outer wall surface of the above-mentioned plastic container The high frequency output feeding means connected to the high frequency bias electrode obtaining, and material gas supply means which introduces the above-mentioned material gas in the above-mentioned vacuum chamber When

0021It provides. With this manufacture device, it is the above-mentioned quantity. Inner wall surface of the plastic container in which the cycle bias electrode was provided with the partition board It formed in the electrode structure where touch or it is located near this inner wall surface. It is considered as the feature.

0022D L C film coatee concerning the present invention Made of a Wing Plus tic container To Construction equipment and the device which produces a D L C film on the inner wall surface of a plastic container It sets,

0023It is the plus so that it may be located near the outer wall surface of the above-mentioned plastic container. Exterior electrode which served as the vacuum room which stores the Chick container,

0024Like and the above-mentioned plus which are letter-breaking-off-the-relation voice, and it grounds to the exterior electrode Internal electrode inserted in the opening of the Chick container,

0025introducing microphone Mouth wave in the above-mentioned plastic container -- the -- Microwave which generates material gas system plasma within a plastic container Feeding means,

0026self-bias voltage occurs on the inner wall surface of the above-mentioned plastic container High frequency output feeding means connected to the exterior electrode obtaining,

0027Raw Material Gas* which introduces the above-mentioned material gas in the above-mentioned plastic container Means,

0028It provides. the exterior electrode which served as the vacuum room, and bra it is located near the outer wall surface of a Stick container -- as -- plastic container it has the inside shape to store -- the outside shape of a plastic container, and exterior electrode inside shape is similar figures mostly -- the external surface of a plastic container, and exterior electrode It contains, also when an inside touches.

0029D L C film coatee concerning the present invention Made of a Wing Plus tic container Manufacturing method and D L C film coatee which produces a D L C film to the outer wall surface of a plastic container In the manufacturing method of a Wing Plus tic container,

0030storing the above-mentioned plastic container to the vacuum chamber of ground potential -- front -- as opposed to an account vacuum chamber -- the high frequency bias electrode of letter-breaking-off-the-relation voice -- the above-mentioned bra The inner wall surface of a Stick container is touched, or it is located near this inner wall surface. obtaining -- Set After carrying out A,

0031Material gas is supplied in the above-mentioned vacuum chamber,

0032Microwave is supplied in the vacuum chamber and it is a front in the vacuum chamber. At the same time it generates account material gas system plasma, The above-mentioned high frequency bias A high frequency output is supplied to an electrode and it is self to the outer wall surface of the above-mentioned plastic container. By generating bias voltage, it is outside the above-mentioned plastic container. It carries out producing a D L C film to a wall surface with Special *. It is the plastic container in which the above-mentioned plastic container was provided with the partition board in this manufacturing method. Plastic container in which the above-mentioned high frequency bias electrode was provided with the partition board This which is the electrode structure where touch an inner wall surface or it is located near this inner wall surface It is considered as the feature.

0033D L C film coatee concerning the present invention Made of a Wing Plus tic container Manufacturing method and D L C film Co 1 tee which produces a D L C film on the inner wall surface of a plastic container In the manufacturing method of a Wing Plus tic container,

0034the inner wall surface of a vacuum chamber, and the outer wall surface of the above-mentioned plastic container -- almost -- storing the plastic container in the vacuum chamber so that it may touch, and receiving the vacuum chamber -- letter-breaking-off-the-relation voice -- and the internal electrode of ground potential -- the A After inserting from the opening of the Russ Chick container,

0035Material gas is supplied in the above-mentioned plastic container,

0036Microwave is supplied in the plastic container and it is the plastic Capacity. It is the above-mentioned vacuum chamber at the same time it generates material gas system plasma in a vessel. A high frequency output is supplied and it is self-Via to the inner wall surface of the plastic container. A voltage is generated, A D L C film is produced on the inner wall surface of the plastic container.

0037D L C film coatee concerning the present invention It is moisture to the outer wall surface of a Wing Plus tic container and the plastic container provided with the between Specification *| board. - gas Varia The D L C film which has a sex was produced.

0038the outer wall surface of the plastic container in the present invention means a contact surface with the open air except opening (oral region) -- an inner wall surface receives an outer wall surface -- back-and-front relations -- Ah A To side is said. Therefore, both sides of the back and front of a partition board are contained in an inner wall surface. There is nothing.

0039it sets to the manufacture device mentioned above -- a high frequency output feeding means -- self-Ba although plasma may also make it it not only to to produce Us, but generate -- high frequency the plasma generation of an output feeding means -- to the last -- a plasma generation means -- Ah It is only an auxiliary means of a To microwave output feeding means. Manufacturing method smell The plasma generation by The and high frequency output supply is auxiliary.

0040the inner wall surface or outer wall surface of a plastic container -- Separation from plasma To be -- there are nothings -- it is more desirable to touch plasma generation space

0041In the present invention, it is To generate to the outer wall surface or inner wall surface of a plastic container. Self bias voltage is the area of film production pressure and an electrode, and its countering electrode. Negative on an outer wall surface or an inner wall surface, although all of positive/negative can be taken depending on a ratio It is more desirable to apply self-bias voltage. Brief explanation of the drawings

0042Drawing 1 -- D L C film coatee concerning the present invention Wing Plus tic container it is a key map showing one form of a manufacture device -- the outer wall surface of a container -- a D L C film -- coatee It is a thing in the case of carrying out Tongue.

0043Drawing 2, Partition board for enabling accommodation of a plurality of contents independently It is a figure showing one form of a plastic container which it had. (a) and three. Container possessing space, (b) It is a container possessing six space.

0044Drawing 3 -- key map showing one form of the electrode structure of a high frequency bias electrode There and (a) -- Drawing 2 the electrode structure corresponding to the container of (a), and (b) -- a figure -- 2 It is a figure showing the electrode structure corresponding to the container of (b).

0045Drawing 4 -- the outer wall surface of a container -- a D L C film -- coatee the time of carrying out Tongue -- my Plastic container manufacture device at the time of providing multiple windows for Mouth wave supply It is a key map showing one form. (a) is a plurality of microwave supply means. When it provides (b) shows the case where one microwave supply means is established. It is a figure.,

0046Drawing 5 -- D L C film coatee concerning the present invention Wing Plus tic container it is a key map showing one form of a manufacture device -- the inner wall surface of a container -- a D L C film -- coatee It is a thing in the case of carrying out Tongue.

0047The explanations of letters or numerals in a figure are as follows. 1 and 3 1 plastic container,

00482 and 3 2 vacuum chambers, 3, and 4 Five insulators and 4 high-frequency bias electrode, 5 3 5 mode converters, 7, and 3 Seven waveguides, 8, and 3 Eight isolators, 9 3 9 Microwave Generating Unit and 1 0 and 3 4 Microwave Supply Means, 6 and 3 6 and 1 1 and 5 2 An event dance consistency machine (Matching knitting) and 1 2 and 5 One high frequency power supply and 1 3 and 5 3 high-frequency output feeding means and 1 4 and 1 6 and 2 1,

00494 0 4 2 and 4 7 Vacuum Valves and 1 5 and 4 One Massflow Controller 1, 1 7 and 5 Zero Material Gas Source of Supply and 1 8 and 4 3 Material Gas Supply Means, 1 9 and 4 Four windows (quartz window) and 2 0 and 4 6 piping and 2 2 and 4 8 vacuum pumps and 3 The 2 exterior An electrode and 3 Three internal electrodes and 4 Nine A shield box and 1 0 0 and 2 0 0 D L C film Co 1 tee It is a manufacture device of a Wing Plus tic container. The best form for inventing

0050The present invention is This although an embodiment of the invention is described in detail below. Embodiment [ of Re and others ] - It limits to an example and is not interpreted.

0051[-- a 1st embodiment : -- the case where a D L C film is carried out to the outer wall surface of a plastic container as for Co 1 Taing --]

0052one form of operation -- a figure -- it explains based on 1.

0053D L C film coatee concerning the present invention Manufacture device 1 of a Wing Plus tic container 0 0, Vacuum Chi by which it was grounded for storing plastic container 1 Yamba 2, The inner wall surface of plastic container 1 is touched, or it is this inner wall surface. It installs via insulator 3 in vacuum chamber 2 so that it may be located close. High frequency bias electrode 4 carried out, It is Guiding about microwave in vacuum chamber 2. By carrying out ON, material gas system plasma is generated in vacuum chamber 2. Microwave supply means 1 to carry out 0, A high frequency output is supplied. It is quantity so that bias voltage may occur in the outer wall surface of Ri plastic container 1. High frequency output feeding means 1 linked to cycle bias electrode 4 3 and material gas supply means 1 which introduces material gas in vacuum chamber 2 It is To equip about 8. To.

0054Like [ of the bottle shape for drinks ] as plastic container 1 and shape Opening (oral region) They are Noodle shape, bucket shape, or B narrowly to a drum section. Like power 1 shape, an opening is the same to a drum section, or slightly large. All of the shape of a path are included. The container which covers with a cork' lid is also included. the present invention Then. -- a figure -- the plastic container provided with the partition board as shown in 2 is included. By having a partition board, it is To about a plurality of contents for accommodation to be independently possible. To. It is moisture to the outer wall surface of the plastic container provided with the partition board. - Gasparri It is a coatee about the D L C film which has A nature. By carrying out Tongue, it is to a content. Volatilization of gas constituents can be controlled from mixing or the content of air gas or vapor gas. In a partition board, he is Kothe about a D L C film. In order not to carry out Ting, there is no D L C film function to prevent the gas-constituents import of each contents.

0055The quality of the material of a plastic container is polyethylene rente reflex evening rate resin (P E T), Polyethylene rente reflex evening rate system copolyester resin (to substitute [ The alcohol component of poly ester ] of ethylene glycol) Sik They are P E T G and Call about the copolymer which uses Xandi methanol to a mouth. It is, Ys The product made from Toman, polybutyrene terephthalate resin, polyethylenenaphthalate resin, Polyethylene resin and polypropylene Copolymer resin Resin (P P) and Cyclophile (c o c) annular After 4 -- A copolymerization, ionomer resin, and poly 1 -- methyl pen ten 1 1 resin, Poly-methyl-methacrylate resin, polystyrene resin, Ethylene-- vinyl alcohol copolymerization resin, Bitter taste Lilo nitrile resin and poly salt -izing vinyl resin, polyvinylidene chloride resin, Poly friend Do resin and Polya Midimide resin, polyacetal resin, polycarbonate resin, polysulfone resin, Or 4 Fluorochemicals Tschirren resin, Acrylonitrile -- Styrene resin and Acrylonito Although Lil 1 butadiene 1 styrene resin and But are good, they are P E T and P E T G, P P or C O C is preferred -- it excelled Performance is demonstrated. In this example, P E T, P E T G, C O C, or the container made from P P is used.

0056vacuum chamber 2 -- few -- Both -- It is which stores plastic container 1 It has a size of Over. They are not vacuum Champa 2 and a mere vacuum room. It becomes high frequency bias electrode 4 and a pair, and forms the electrode. That of This It comes, and since it is grounded, it is 0 V potential. microwave supply hand Stage 1 in order to introduce microwave in vacuum chamber 2 from 0 -- and -- in order to consider a chamber as decompression at the time of microwave introduction -- microwave supply Means 1 the connection place of 0 and vacuum chamber 2 -- window 1 9 is provided. in addition -- the present invention -- the position of a window -- a figure -- it is not limited to the place of 1. Window 1 The 9 quality of the materials It is preferred that it is silica glass. Opening-and-closing mechanism whose receipts and payments of plastic container 1 are enabled to vacuum chamber 2 (un-illustrating) Provision It is dividing.

0057Insulator 3, and vacuum chamber 2 and high frequency bias electrode 4 which were grounded It is for insulating. As long as this function is achieved, they are shape and Material. Any may be sufficient as quality. The sintering plate of alumina is illustrated as an example. The inner wall surface of high frequency bias electrode 4 and plastic container 1 is touched. Or it has the shape which is located near this inner wall surface. Plastic It is an inner wall although it is preferred to have touched over the whole inner wall surface of The container 1. It is isolated unless a field and the external surface of high frequency bias electrode 4 are locally separated. It may be carrying out. Namely, the inner form and high frequency of plastic container 1 The outside of bias electrode 4 becomes similar figures-like. plastic container 1 -- Drawing 2 the case where it is the shape which is illustrated to (a) -- motorcycle high frequency A bus electrode 4 -- a figure -- 3 It is preferred that it is the electrode structure shown in (a). Drawing 2 High frequency bias electrode [ corresponding to (b) ], and figure 3 Electrode shown in (b) It is structure. existence of the partition board of a container becomes obstructive -- high frequency Via It is because the wall surface in a container cannot touch A electrode 4. To high frequency bias electrode 4, and vacuum chamber 2 and letter-breaking-off-the-relation voice which were grounded To be.

0058Microwave supply means 1 It is Guiding about microwave in 0 and vacuum chamber 2. By carrying out ON, material gas system plasma is generated in vacuum chamber 2. It carries out. As shown in Drawing 1, they are microwave supply means 1 0 and the Ma . Excitation wave. (for example, 2.) 4 5 micro made to generate G H z Wave generating Unit 9, isolator 8, and impedance match machine 6 -- and -- It comprises mode converter 5. Microwave generating Unit 9, eye Each of the Soule evening 8 and impedance match machine 6, and microwave It is connected via waveguide 7 to pass. microphone Mouth wave supply hand Stage 1 the composition of 0 is not limited to what was shown in Drawing 1 -- microwave -- true -- if it can introduce efficiently in empty chamber 2 -- what kind of composition It may take. it was shown in Drawing 4 -- as -- the window for microwave supply -- double -- Number Provided is also good. In Drawing 4, (a) A plurality of microwave supply means are established. Although the case where a It was case and one (b) microwave supply means were established was shown, it chooses with the size shape of a container. When a plastic container is large-sized It is preferred to use the device shown in Drawing 4. Drawing 4 guides waves. A pipe, a mode conversion machine, an isolator, an impedance match machine, etc. are non-figures. It was considered as Show.

0059High frequency output feeding means 1 Like and high frequency power supply 1 which show 3 in Drawing 1 6 as well as impedance match machine 1 It comprises 1. . impedance -- ready -- Joint 1 it is insulated with 1 and a vacuum chamber -- it is connected to high frequency bias electrode 4. impedance match machine 1 1 -- coaxial Ke 1 The passing Le -- a high frequency power supply (RF power supply, 1 3 .5 6 M H z) -- 1 2 -- connection -- Being done. High frequency power supply 1 2., It is grounded.

0060Material gas supply means 1 It is Guiding about material gas to the inside of 8 and vacuum chamber 2. It is for carrying out ON. Material gas source of supply 1 It is vacuum Barh to the output side of 7. The 1 The one side of 6 is connected, vacuum valve 1 the other side of 6 -- material gas style Flow instrument (massflow controller 1) 1 for quantity adjustment 5 -- connection -- Re and flow instrument 1 the other side of 5 -- vacuum valve 1 the one side of 4 is connected -- true -- Empty valve 1 Vacuum chamber 2 is connected to the other side of 4. Request If material gas can be supplied in vacuum chamber 2 by a flow, it will be material gas supply means 1. 8 can also be carried out except above-mentioned composition. Materials Gas feeding means 1 Although there is no restriction about the connection place of 8 and vacuum chamber 2, the place where material gas does not stagnate in the specific part in vacuum chamber 2 is good. As material gas, The aliphatic hydrocarbon of gas or a fluid, aromatic hydrocarbon, oxygenated hydrocarbon, and nitrogen-containing hydrocarbon are Use at normal temperature. for is carried out. Especially carbon numbers are six or more benzene, toluene, and 0. Xan etc. are desirable to - xylene, in-xylene, p-xylene, and cyclo. Foodstuffs etc. When using it for a container, they are ethylene system hydrocarbon, such as aliphatic hydrocarbon from a sanitary viewpoint especially ethylene, propylene, or butylene, or acetylene, and Ery. Acetylene system carbonization water, such as Wren or 1-Butyne Base is preferred. Although it may use by these materials and independent, they are two or more sorts. It may be made to use it as mixed gas. these gases even if it dilutes with rare gas like argon or a helium and makes it use -- right -- it is -- .

0061moreover -- the case where a silicon content D L C film is produced -- Si content carbonization water base -- system gas is used.

0062the space in vacuum chamber 2 -- piping 2 it is connected to the one side of 0 -- piping 2 the other side of 0 -- vacuum valve 2 passing 1 -- vacuum pump 2 It is connection to 2. It is carried out. This vacuum pump 2 2 is connected to the exhaust side.

0063the present invention is not limited to the above-mentioned embodiment -- This which is changed variously and carried out It is possible. For example, at this embodiment, it is an object for one plastic container. Although explained according to the device, it is high frequency Ba of the plurality in vacuum chamber 2. It is Co 1 Te simultaneously about a plurality of plastic containers by providing a Us electrode. It can also be considered as the film production device which can act as Inge.

0064as the container which produces a thin film to an outer wall surface in this embodiment -- lunch box etc. a food container and the container for drinks are begun -- ink Jet recording method record A Lynn evening use ink A cartridge use restriction is carried out although A ship etc. can be illustrated -- it has it is -- .

0065Although the D L C film or the S i content D L C film is mentioned in this embodiment as a thin film which produces a film with a C V D film production device, other thin films are produced in a container. When carrying out, it is also possible to use the above-mentioned film production device. next, D L C film Co 1 tee shown in Drawing 1 Manufacture of a Wing Plus tic container Device 10 the method of producing a D L C film to the outer wall surface of a container using 0 -- just -- Explanation is carried out.

0066First, vacuum valve (un-illustrating) It opens and is Open to atmosphere about the inside of vacuum chamber 2. To to release. Thereby, the inside of entering and vacuum chamber 2 is made into atmospheric pressure for air. To. next, opening-and-closing mechanism (un-illustrating) of vacuum chamber 2 Vacuum Chamber is opened -- plastic container 1 -- high frequency bias from the opening it inserts in electrode 4 -- it installs. At this time, it is high frequency bias electrode 4. The external surface and the inner wall surface of plastic container 1 will be in the state where it touched mostly. To the next Opening-and-closing mechanism of vacuum chamber 2 (un-illustrating) A vacuum chamber is closed. Sealed is carried out.

0067then, vacuum valve (un-illustrating) Vacuum valve 2 after closing 1 -- Open it comes -- vacuum pump 2 It exhausts by 2. Thereby, the inside of vacuum chamber 2 is piping 2. It is exhausted through 0 and the inside of vacuum chamber 2 is decompressed. Vacuum Tea at this time The pressure in Iron 2 isX[ 5 ] 1. 0 --³*X[ 5 ] 1 01²It is Torr.

0068next, vacuum valve 1 6 is opened -- material gas source of supply 1 in 7 -- carbonization water base -- gas is generated and this hydrocarbon gas is introduced in piping -- flow instrument 1 the hydrocarbon gas flow control was carried out [ hydrocarbon gas ] by 5 -- vacuum valve 1 pass 4 -- it blows off into vacuum chamber 2. Thereby, hydrocarbon gas is a vacuum. It is introduced in chamber 2. and the inside of vacuum chamber 2 -- control -- Suitable for D L C film production by balance of a Was done gas mass flow and exhaust air capability It is maintained at pressure (for example, 0.0 5* 0.5 0 Torr grade).

0069Then, it is microwave supply means 1 to vacuum chamber 2. By 0, it is microphone Mouth wave. (for example, for example, 2. 4 5 GH z) 5 0*: L 0 0 0 W is supplied. this output value is illustration -- size of a vacuum chamber or a container etc. -- it adjusts. an output is efficiently supplied in a chamber -- as -- Impedance is adjusted. It is vacuum Chia by supply of microwave. The plasma of a material gas system occurs in Iron 2. Density of plasma 1 0"* 1 0^{1 2}c m--³It can carry out.

0070When the above-mentioned microwave is supplied, they are being simultaneous or almost simultaneous and a high frequency output (for example, 1 3.) from high frequency motorcycle 2. It is impedance match machine 1 to A bus electrode 4. 1 is passed and it is high frequency power supply 1. 5 6 MHz1 0*1 0 0 0 W is supplied. At this time, it is impedance match machine 1. 1, high frequency bias electrode 4, and truth To Impey 1 dance of empty chamber 2, they are inductance L and a capacitor. It has united by An C. By supply of high frequency, it is Plastic. Self-bias voltage occurs in the outer wall surface of The container 1. To microwave Ion electrified among the material gas system plasma which carried out intermediary generating in plus It is drawn to high frequency bias electrode 4. Thereby, it is plus. The electrified ion collides with the outer wall surface of plastic container 1, and a D L C film is produced. The film production time at this time becomes about several seconds and a short thing. the above-mentioned high frequency output value is illustration -- a vacuum chamber and a container -- a large -- Strange in order to adjust self-bias, especially although Tears etc. adjust It obtains. it responded to this adjustment and a container -- it becomes a D L C film of desired precise nature It is for making it like.

0071At the present invention, the amount of supply and the high frequency output of microwave are it as mentioned above. It controls to But independence. Generally plasma is Depart also by a high frequency output. It carries out raw. However, the plasma density at that time is 1. 0⁹c m³until -- low -- It is density. Namely, plasma according [ on the present invention and ] to a high frequency output 1/1 of contribution of generating, and contribution of the plasma generation by microwave 0 0*1Z1 0 0 It is considered about zero. Therefore, at the present invention, it is a microphone. It is Cause to a high frequency output about the ion which arises by the plasma which made it generate in Mouth wave. It is compulsorily to the outer wall surface of a plastic container by the self-bias which carries out Cause. It can be called the mechanism which draws and produces a D L C film. This and the former Independent method of a high frequency capacitive coupling type electric discharge method or a microwave discharge method It differs. the D L C film obtained by the present invention -- the after-mentioned -- real -- as [ explain / the example of Application ] -- the above-mentioned method of independent from a viewpoint of moisture and Gas barrier nature Formula It is a quality film and, moreover, can produce a film with sufficient productivity. next, high frequency power supply 1 the high frequency output from 2 is suspended -- simultaneous -- microphone Mouth wave generating Nun The microwave output from A 9 is also suspended. Vacuum valve 1 6 and 1 4 is closed and supply of material gas is stopped. Then, vacuum Barh A 2 It is vacuum pump 2 about the hydrocarbon gas in a difference and vacuum chamber 2 in 1. It exhausts by 2. then, vacuum valve 2 1 is closed -- vacuum pump 2 2 is stopped. It is vacuum Po when producing the following plastic container. Ump 2 2 is taken as operational status, without making it stop. The pressure in vacuum chamber 2 at this time isX[ 5 ] 1. 0³* 5 X 1 0--²It is Torr. then, vacuum Valve (un-illustrating) it opens and carries out air opening of the inside of vacuum chamber 2 -- mentioning above repeating the Film formation method -- outer wall surface of the following plastic container A D LC film is produced.

0072in addition -- using the plastic container which does not have a partition board at this embodiment although explained -- a figure -- 2 (a) a plurality of contents shown in (b) -- independent -- accommodation even if it uses the plastic container provided with the partition board for supposing that it is possible -- right -- it is -- . in this case, a figure -- 3 (a) the electrode structure shown in (b) -- an owner -- The high frequency bias electrode to carry out is used.

0073(2nd Embodiment : It is Co 1 Te about a D L C film to the inner wall surface of a plastic container When Ting is carried out)

0074one form of operation -- a figure -- it explains based on 5. D L C film Co concerning the present invention One tee Manufacture device 2 of a Wing Plus tic container 0 0, plastic Capacity Vessel 3 it is located near the outer wall surface of 1 -- as -- plastic container 3 1 -- Yield Exterior electrode 3 which served as the vacuum room which carries out Payment 2 and exterior electrode 3 as opposed to 2 -- insulation a state -- and it grounds -- as Plastic container 3 It inserts in the opening of 1. Internal electrode 3 which served as the gas introduction pipe carried out 3 and exterior electrode 3 He is Ma in two. Excitation wave is introduced, Plastic container 3 It is materials Ga within one. Microwave supply means 34 which generates A system plasma, Plastic container 3 It is exterior electrode 3 so that the inner wall surface of 1 may be made to generate self-bias voltage. High frequency output feeding means 5 linked to 2 3 and plastic container 3 One Material gas supply means 4 which introduces material gas inside 3 is provided. Plastic container 3 1 is the same as that of what was explained by the embodiment of The 1. They are shape and the quality of the material.

0075exterior electrode 3 2 and plastic container 3 the near outer wall surface of 1 -- To position -- like -- plastic container 3 1 is stored. Namely, Plastic container 3 The outside and exterior electrode 3 of 1 The internal shape of 2 is similar figures-like. plastic container 3 having touched over the whole outer wall surface of 1 -- good -- better There -- an outer wall surface and exterior electrode 3 unless the inside of 2 is locally separated -- Distance may be carried out. Exterior electrode 3 Since 2 serves as a vacuum room, it is sealed. It has a sex.

0076Exterior electrode 3 While being 2 and a vacuum room, it is internal electrode 3. 3 and pair An intermediary and an electrode are formed. Microwave supply means 3 From 4, it is the exterior. Electrode 3 At the time of microwave introduction in order to introduce microwave in two In order to consider a chamber as decompression, they are microphone Mouth wave feeding means 34 and exterior electrode 3. In the connection place of 2, it is window 4. 4 is provided. Window 4 The quality of the material of 4 is silica glass. A certain thing is preferred. Exterior electrode 3 In 2, it is plastic Capacity. Opening-and-closing mechanism whose receipts and payments of vessel 1 are enabled (un-illustrating) It is equipped. Internal electrode 3 3 and exterior electrode 3 To 2, it is letter-breaking-off-the-relation voice, and grounds. Like and plastic container 3 As for * ON, the opening of 1 is used. Structure of an internal electrode, For example, it is pipe-shaped. It serves as a material gas introduction pipe. Internal electrode 3 The end of the side which was made into the opening of 3 as for * ON to material gas is blow off. To. Internal electrode 3 The length of 3, and plastic container 3 It is a proper tone so that a D L C film may be uniformly produced by the inner wall surface of 1 from a viewpoint of moisture and gas Varia. Ready is carried out.

0077Insulator 4 5 and internal electrode 3 3 and exterior electrode 3 In order to insulate 2 It is a thing. As for shape and the quality of the material, either is good as long as this function is achieved. It is.

0078microwave supply means 3 what explained 4 by a 1st embodiment -- said -- It needs. high frequency output feeding means 5 3 and exterior electrode 3 it is connected to 2 -- exterior electrode The point which supplies a high frequency output, and plastic container 3 Inner wall surface of 1 the point installed so that self-bias voltage may be generated -- embodiment of The 1 Although it differs Impey 1 dance consistency machine 5 2 and high frequency power supply 5 Arrangement of the 1st grade is the same as that of what was explained by the embodiment of The 1.

0079Material gas supply means 4 3 and plastic container 3 Inside [ having been inserted in 1 ] Part electrode 3 One ends [ 3 ] (feed opening) It is connected to the other end. An internal electrode is a material gas feed opening (un-illustrating) at being tubular and its tip. It has provided and material gas blows off from a material gas feed opening. Material gas supply means 4 It can set to 3. Configuration is the same as that of the composition explained by the embodiment of The 1.

0080Material gas is as a 1st embodiment having explained.

0081exterior electrode 3 the space in two -- piping 4 being connected to the one side of 6 -- piping 4 the other side of 6 -- vacuum valve 4 passing 7 -- vacuum pump 4 8 -- connection -- Being done. This vacuum pump 4 8 is connected to the exhaust side.

0082At a 2nd embodiment, it is exterior electrode 3. It is shield box 4 about the 2 whole. It covers by 9. It is to prevent high frequency from being revealed outside.

0083the present invention is not limited to the above-mentioned embodiment -- This which is changed variously and carried out It is possible. For example, at this embodiment, it is an object for one plastic container. It is Unit of these although explained according to the device. Multiple As are provided. It is a coatee simultaneously about a plurality of plastic containers. Tongue can be carried out. It can also be considered as a film production device.

0084It is a food container as a container which produces a thin film on an inner wall surface in this embodiment. Use restriction is not carried out although the container for drinks can be illustrated.

0085Although the D L C film or the S i content D L C film is mentioned in this embodiment as a thin film which produces a film with a C V D film production device, other thin films are produced in a container. The point which can also use the above-mentioned film production device when carrying out is a carried-out type of The 1. It is the same with having explained according to voice.

0086At a 1st embodiment, it is vacuum Chi as a countering electrode of a high frequency bias electrode. External electricity which Yamba functions and serves as a vacuum chamber in a 2nd embodiment Although the internal electrode is functioning as a countering electrode of a pole, these countering electrodes it is illustration -- being special, the grounded countering electrode, etc. may be used. From book It is not restricted by where Ming and a countering electrode are carried out. next, D L C film coatee shown in Drawing 5 Manufacture of a Wing Plus tic container Device 2 0 the method of producing a D L C film on the inner wall surface of a container using 0 -- just -- Explanation is carried out.

0087First, vacuum valve (un-illustrating) It opens and is exterior electrode 3. It is air opening about the inside of two. It carries out. Thereby, airs is entering and exterior electrode 3. The inside of two is made into atmospheric pressure. next, exterior electrode 3 Opening-and-closing mechanism of 2 (un-illustrating) an exterior electrode is opened -- plastic container 3 1 -- the bottom -- quartz window 4 the direction which touches 4 -- the exterior it accommodates in an electrode -- it installs. This time, it is exterior electrode 3. Two insides and As The Russ Chick container 3 The outer wall surface of 1 will be in the state where it touched mostly. Next, External electricity It is 3 very much. Two opening-and-closing mechanisms (un-illustrating) An exterior electrode is closed and sealed. Internal electrode 3 3 is plastic container 3. It was inserted through the opening of 2. It will be in a state.

0088then, vacuum valve (un-illustrating) Vacuum valve 4 after closing 7 -- Open it comes -- vacuum pump 4 It exhausts by 8. thereby -- plastic Container 3 1 -- inside -- piping 4 it is exhausted through 6 -- plastic container 3 The inside of one is decompressed. Plastic container 3 at this time The pressure in one isX[ 5 ] 1. 01³* 5 X 1 0--²It is Torr.

0089Next, vacuum valve 4 They are a difference and material gas source of supply 5 about 0. In 0, it is carbonization water. Matter gas is generated, this hydrocarbon gas is introduced in piping -- flow instrument 4 the hydrocarbon gas flow control was carried out [ hydrocarbon gas ] by 1 -- vacuum valve 4 pass 2 -- internal electrode 3 Feed opening of 3 (oral region of internal electrode 3 3 tip part) from -- Plastic container 3 It blows off into 1. Thereby, hydrocarbon gas adds. Chick container 3 It is introduced in one. And pressure which was suitable for DLC film production by balance of the controlled gas mass flow and exhaust air capability in plastic container 3 1 (for example, 0.) 0 5* 0 . 5 0 It is maintained at Torr. Then, it is microwave by plastic container 3 4. It is microwave supply means 3 in one. (for example, 2.) 4 5 G H z5 0*; L 0 0 0 W is supplied. this output value is illustration -- an exterior electrode, the size of a container, etc. adjust. An output is efficiently supplied in a chamber. Impedance is adjusted like. It is a bra by supply of microwave. Stick container 3 The plasma of a material gas system occurs in one. Plasma Density is 1. 0^{1 1}*: L 0^{1 2}c m--³It can carry out.

0090if the above-mentioned microwave is supplied -- being simultaneous or almost simultaneous and exterior electrode 3 2 -- impedance match machine 5 passing 2 -- high frequency power supply 5 High frequency from 1 an output (for example, 1 3 .5 6 MHz) -- 1 0*1 0 00 is supplied. That of This It comes and is An event dance consistency machine 5. 2 and internal electrode 3 Í of 3 and exterior electrode 32 To a Image dance, it is Synthesis by inductance L and capacitance C. It is in order. By supply of high frequency, it is plastic container 3. Inner wall surface of 1 Self-bias voltage occurs. Materials generated by microwave The ion electrified among gas system plasma in plus is exterior electrode 3. It is drawn to 2 sides. Thereby, the ion electrified in plus adds. Chick container 3 It collides with the inner wall surface of 1, and a D L C film is produced. That of This The film production time of Can becomes about several seconds and a short thing. the above-mentioned high frequency appearance a power value is illustration -- a vacuum chamber, the size of a container, etc. -- To adjust Especially To changes in order to adjust self-bias. This adjustment is for making it become a D L C film of desired precise nature according to a container.

0091Also in a 2nd embodiment, it is microwave like the embodiment of The 1. The amount of supply and a high frequency output are controlled independently, respectively. To a 2nd embodiment Ion which arises by the plasma which made it generate with microwave even if it set It can be called the mechanism which draws compulsorily on the inner wall surface of a plastic container, and produces a D L C film by the self-bias resulting from a high frequency output, Follow Method of independent of a Come high frequency capacitive coupling type electric discharge method or a microwave discharge method It differs from a formula. the D L C film obtained by the present invention is a quality film from the above-mentioned independent method from a viewpoint of moisture and Gas barrier nature -- Only -- A film can be produced with sufficient productivity.

0092next, high frequency power supply 5 the high frequency output from 1 is suspended -- simultaneous -- microphone Mouth wave generating Unit 3 The microwave output from 9 is also suspended. Vacuum Barh A 4 0 and 4 2 is closed and supply of material gas is stopped. Then, vacuum Valu 4 They are a difference and plastic container 3 about 7. One It is vacuum Po about inner hydrocarbon gas. Ump 4 It exhausts by 8. then, vacuum valve 4 7 is closed -- vacuum Pump 4 8 is stopped. When producing the following plastic container, it is vacuum pump 4. 8 is taken as operational status, without making it stop. External electricity at this time It is 3 very much. The pressure in two isX[ 5 ] 1.X[ 0*5 ] 1 0²It is Torr. Then, vacuum valve (un-illustrating) It opens and is exterior electrode 3. Air opening is carried out and the inside of two is mentioned above. By repeating the film production method carried out, it is an inner wall of the following plastic container. A D L C film is produced by the field.

0093[Example]

0094(Film production to a plastic container outer wall surface)

0095(Example 1)

0096the figure explained by a 1st embodiment -- the manufacture device of 1 is used -- Plastic It evaluated by producing a DL C film to the outer wall surface of the The container.

0097A plastic container and container provided with the partition board (figure 2 (a) capacity 2 0 0 0 m l, 1 0 c mX 2 0 c mX l 0 c mH, resin thickness 2 mm, surface area 8 0 0 c m)²It was used. At this time, it is Drawing 3. It is Show to (a). The high frequency bias electrode of the electrode structure which it had was used. However, partition board The same result was obtained even if it was a container which it does not have.

0098The container quality of the material was set to P E T G. Material gas used acetylene. The film production pressure in a vacuum chamber is 0.1. 0 Tor r and a material gas flow are 2. 5 As for 0 seem and film production time, 2 seconds and a high frequency output are 50. 0 W, microwave output 5 0 It was referred to as 0 W. Table The conditions of plasma C VD were shown in 1.

0099(Example 2)

0100It is a high frequency output 3 5 0 W and a microwave output are 6. 0 Except for having been referred to as 0 W It presupposed that it is the same as that of Example 1, and considered it as Example 2.

0101(Example 3)

0102It is a high frequency output 6 0 0 W and a microwave output are 2. 5 Except for having been referred to as 0 W It presupposed that it is the same as that of Example 1, and considered it as Example 3. Example 3 and plasma making it set to generate -- a high frequency output -- the Lord and a microwave output -- secondary -- When -- it is an example -- if the plasma density of a high frequency capacitive coupling type electric discharge method is low introducing microwave auxiliary, in order to compensate the fault to say -- plasma density They are the conditions to raise.

0103(Example 4)

0104suppose that it is the same as that of Example 1 except having set the container quality of the material to C O C -- considering it as Example 4 It was.

0105(Example 5)

0106Except having set the container quality of the material to P P, it presupposed that it is the same as that of Example 1, and considered it as Example 5. (Comparative example 1)

0107a high frequency output -- 0 W and a microwave output -- 8 0 it is considered as Example 1 and the * except having been referred to as 0 W -- it was considered as comparative example 1.

0108(Comparative example 2)

0109a microwave output -- 0 W and a high frequency output -- 8 0 0 W and a material gas flow -- 8 suppose that it is the same as that of Example 1 except having made 0 seem and film production time into 6 seconds -- it was considered as comparative example 2.

0110(Comparative example 3)

0111P Consider as control what does not produce a film in the container made from E T G, and compare it. It was considered as Example 3.

0112(Comparative example 4)

0113It was considered as comparative example 4 by considering as control what does not produce a film in the container made from CO C.

0114(Comparative example 5)

0115P It was considered as comparative example 5 by making into Control 1 Le what does not produce a film in the container made from P.

0116[ -- table 1]

0117<img file="WO03000559A1_D0001.tif" />Example 1 About the container of 5 and comparative example 5, it is Line in the next evaluation. Ivy.

0118(l) Distribution of a D L C film

0119T e n c h o l a l p h a -- s t e p 5 0 The thickness of the D L C film was measured with the sensing pin type level difference plan of 0. the opening lower part, drum section, and bottom of a container -- each three film thickness to kick is measured -- average value was calculated. The following formula 1 defines thickness distribution. The maximum film thickness or the minimum film thickness, the opening lower part of a container, Body and body It is considered as film thickness applicable from the average film thickness in Bottom portion.

0120[Formula 1]

0121thickness distribution ] = (maximum film thickness-minimum film thickness) / (minimum film thickness + maximum film [ ] -- thick) X 1 0 0

0122Thickness distribution sets the case more than △ and 8 % to X for the case of O and less than 4 %* 8 %, and synthesizes the case of less than 0* 4 % about distribution of a D L C film. Value It carried out.

0123The corrected paper (Fiber)¹(2) Existence of modification of a container,

0124What had modification of a container by viewing is set to X, and the case where there is nothing is made into O. It was.

0125(3) Film production speed

0126common [ of the film thickness in the opening lower part of the container in (1), a drum section, and a bottom ] Uniformity film thickness is Removal(ed) in film production time -- average film production speed was computed.

0127(4) The degree of oxygen penetration

0128M It is 2 at O x t r a n by o d e r n C o n t r o l. 2 °CX 6 It measured on condition of 0 % RH. Oxygen permeation [ in / as the whole container / inside and outside ] Excessive (oxygen which penetrates an outer wall surface) It asked.

0129(5) The degree of moisture penetration

0130The degree [ in / as the whole container / inside and outside ] of moisture penetration (a part for water which penetrates an inner wall surface) It asked. as the degree of moisture penetration of a container -- each part store of a container -- chlorination Cal Shum is put in -- a lid is sealed with a stainless plate -- 4 0 °CX 9 0 % RH It set under the condition. A calcium chloride absorbs moisture and weight changes as time progress is carried out. It resembles measuring the amount of change, and is criticism about the degree of moisture penetration more. Value was carried out.

0131an evaluation result -- a table -- it is shown in 2.

0132Following space

0133[ -- table 2]

0134<img file="WO03000559A1_D0002.tif" />It was which self-bias voltage generates in a container outer wall surface in Example 1*5 Because -- it compares with comparative example 1 which does not require self-bias -- thickness distribution -- right -- It is Good.

0135Example 1 -- the both sides of the microwave introduction effect and the high frequency introduction effect -- Ah a film with it is obtained -- a crack -- few -- It is thought that there is nothing. [ high intermediary moisture and Gas barrier nature, and ] [ precise ] however, a high frequency output is large -- the etching effect Since it appears, film production speed is not the fastest in an example.

0136the high-density plasma according to microwave at Example 2 is formed -- the self-bias voltage by high frequency introduction occurred moderately -- a sake -- moisture [ ] - Gas barrier nature is most excellent -- a precise film is obtained -- and a crack is also extraordinary It is thought that it is few. The etching effect is also strong in about one example. Since there is nothing, film production speed is large.

0137On generating and self-bias of plasma according to high frequency at Example 3 Under the situation where the ion collision to depend happens, microwave is applied auxiliary, and it is A. High-density-ization of Ramma is attained. Although it is not about one example,

0138S* going out it excels in paper moisture (rule 91) and Gas barrier nature -- membranous precise nature is high -- a detailed crack -- few -- It is thought that there is nothing.

0139although Examples 4 and 5 change the quality of the material of a container -- the influence popularity is not won in particular -- the same tendency as Example 1 is seen. _

0140Comparative example 1, It is a case where only microwave is introduced. With this film thickness. Sufficient moisture - gas Pariya nature, Inside [ especially moisture Gas barrier nature is obtained ] Ivy. the ionized materials can draw near to a plastic surface there is nothing -- if membranous precise nature is missing since an ion bombardment does not arise, either -- ideas To be. Although film production speed is quick, it is moisture [ of a fixed level ] -. Gas barrier nature Securable film thickness is considered to be large as compared with other examples.

0141comparative example 2 is a case where only high frequency is introduced -- moisture and gas barrier A sex is inferior as compared with an example. Since self-bias has occurred, it is a film. Although precise nature is high, the rise in heat of a container is large and a detailed crack is mostly. It is thought that it has generated. Film thickness is small. plasma density -- low -- it hurts -- film production speed is quite low. Therefore, productivity is low.

0142As mentioned above, at this example, they are a high frequency capacitive coupling type electric discharge method and microwave. The film production mechanism of an all directions method is different, combining an electric discharge method effectively. To, The manufacture device which produces a quality film with sufficient productivity, a manufacturing method, and outer wall surface It is a coatee about a D L C film. Providing the plastic container which carried out Tongue It was able to do.

0143(Film production to the wall surface in a plastic container)

0144(Example 6)

0145the figure explained by a 2nd embodiment -- the manufacture device of 5 is used -- Plastic It evaluated by producing a DL C film on the inner wall surface of the The container.

0146a plastic container and the container which is not provided with the partition board -- thing of the Pot shape for drinks (resin thickness seeing capacity 5 0 0 m l, 6 8 .5 phi X 2 0 7 mmH, 0 .3 m m, inner surface product 4 0 0 c m)²It was used.

0147The container quality of the material was set to P E T. Material gas used acetylene. As for the film production pressure in a vacuum chamber, 0. 1 O Torr and a material gas flow are 5. As for 0 seem and film production time, 2 seconds and a high frequency output are 5. 00 W and a microwave output are 5. 0 It was referred to as 0 W. Table The conditions of plasma C V D were shown in 3.

0148(Example 7)

0149It is a high frequency output 3 5 0 W and a microwave output are 6. 0 Except for having been referred to as 0 W It presupposed that it is the same as that of Example 6, and considered it as Example 7.

0150(Example 8)

0151It is a high frequency output 6 0 0 W and a microwave output are 2. 5 Except for having been referred to as 0 W It presupposed that it is the same as that of Example 6, and considered it as Example 8. Example 8 and plasma making it set to generate -- a high frequency output -- the Lord and a microwave output -- secondary -- When -- It is an example.

0152(Example 9)

0153suppose that it is the same as that of Example 6 except having set the container quality of the material to C O C -- it was considered as Example 9.

0154(Example 1 0)

0155suppose that it is the same as that of Example 6 except having set the container quality of the material to P P -- example 1 It was referred to as 0. ，

0156(Comparative example 6)

0157They are 0 W and a microwave output about a high frequency output 8 0 It carries out except having been referred to as 0 W. It presupposed that it is the same as that of Example 6, and considered it as comparative example 6.

0158(Comparative example 7)

0159a microwave output -- 0 W and a high frequency output -- 8 0 0 W and a material gas flow -- 1 5 suppose that it is the same as that of Example 6 except having made 0 seem and film production time into 6 seconds -- comparison It was considered as Example 7.

0160(Comparative example 8)

0161P It was considered as comparative example 8 by considering as control what does not produce a film in the container made from E T.

0162(Comparative example 9)

0163C Consider as control what does not produce a film in the container made from O C, and it is a comparative example. It was referred to as 9.

0164(Comparative example 1 0)

0165P Make into conte mouth 1 Le what does not produce a film in the container made from P, and it is comparative example 1. It was referred to as 0.

0166[ -- table 3]

0167<img file="WO03000559A1_D0003.tif" />Example 6*1 0 and comparative example 6*1 The evaluation same about the container of 0 as the case of the container of Example 5 and comparative example 1*5 was performed.

0168an evaluation result -- a table -- it was shown in 4.

0169Following space

0170[ -- table 4]

0171<img file="WO03000559A1_D0004.tif" />It is a D L C film to a container outer wall surface the case where a D L C film is produced on the wall surface in a container. The same tendency as the case where a film is produced is seen.

0172namely, example 6*1 in order to apply self-bias in 0 -- self--- it compares with comparative example 6 which does not require oneself bias -- thickness distribution is good -- is there.

0173Example 6 -- the both sides of the microphone Mouth wave introduction effect and the high frequency introduction effect -- Ah a film with it is obtained -- a crack -- few -- It is thought that there is nothing. [ high intermediary moisture and Gas barrier nature, and ] [ precise ] however, a high frequency output is large -- the etching effect appearing -- To For a To reason, film production speed is not a peak price in an example.

0174the high-density plasma according to microwave at Example 7 is formed -- the self-bias voltage by high frequency introduction occurred moderately -- a sake -- moisture [ ] - Gas barrier nature is most excellent -- a precise film is obtained -- and a crack is also extraordinary It is thought that it is few. The etching effect is also strongly as Example 6. Since there is nothing, film production speed is large.

0175On generating and self-bias of plasma according to high frequency at Example 8 Corrected paper Under the situation where the Ion collision to depend takes place, microwave is applied auxiliary, and it is A. High-density-ization of Ramma is attained. although it is not about six example, it excels in moisture and Gas barrier nature -- membranous precise nature is high -- a detailed crack -- few -- It is thought that there is nothing. '

0176Examples 9 and 1 0 is the shadow although the quality of the material of a container is changed. sound in particular does not win popularity but the same tendency as Example 6 is seen.

0177Comparative example 6, It is a case where only microwave is introduced. With this film thickness. Sufficient moisture Inside [ - gas-barrier-property , , especially moisture Gas barrier nature are obtained ] Ivy. the ionized materials can draw near to a plastic surface there is nothing -- if membranous precise nature is missing since an ion bombardment does not arise, either -- ideas To be. Although film production speed is quick, it is moisture [ of a fixed level ] -. Gas barrier nature Securable film thickness is considered to be large as compared with other examples.

0178comparative example 7 is a case where only high frequency is introduced -- moisture and gas barrier A sex is a little inferior as compared with an example. Since self-bias has occurred Although membranous precise nature is high, in the rise in heat of a container, a detailed crack greatly It is thought that it has generated mostly. Film thickness is small. plasma density since it is low -- film production speed -- rather -- ' -- it is low. Therefore, productivity is low. As mentioned above, also in the case where a D L C film is produced on the wall surface in a container, Quantity A cycle capacitive coupling type electric discharge method and a microwave discharge method are constructed effectively, and it is Fit. It differs from the film production mechanism of a To do it all directions method, It is Made with sufficient productivity about a quality film. It is a coatee about the D L C film which carries out a film. The manufacture device of the plastic container which carried out Tongue, its container, and the manufacturing method of the container were able to be provided.