EP1517364A4
Semiconductor device and its producing method
8 sheets
Sheet 1 Sheet 2 Sheet 3 Sheet 4 Sheet 5 Sheet 6 Sheet 7 Sheet 8
Every citation, both ways
| Document | Relation | Office | Cited during |
|---|---|---|---|
| US6150727A | Cites | United States of America | Search report |
| US6251694B1 | Cites | United States of America | Search report |
| PATENT ABSTRACTS OF JAPAN vol. 011, no. 104 (E - 494) 2 April 1987 (1987-04-02) | Non-patent | – | Search report |
| See also references of WO 2004001839A1 | Non-patent | – | Search report |
16 members in 8 offices
Priority claims1
| Document | Office | Kind | Date |
|---|---|---|---|
| 0206245 | Japan | W |
Members16
| Document | Office | Kind | |
|---|---|---|---|
| TW546841B | Taiwan Province of China | B | |
| WO2004001839A1 | World Intellectual Property Organization (WIPO) | A1 | |
| KR20040111695A | Republic of Korea | A | |
| EP1517364A1 | European Patent Office (EPO) | A1 | |
| CN1628379A | China | A | |
| US2005151250A1 | United States of America | A1 | |
| JPWO2004001839A1 | Japan | A1 | |
| EP1517364A4This record | European Patent Office (EPO) | A4 | |
| US7095045B2 | United States of America | B2 | |
| KR100643645B1 | Republic of Korea | B1 | |
| JP3978449B2 | Japan | B2 | |
| CN101145533A | China | A | |
| CN100382262C | China | C | |
| CN100536103C | China | C | |
| EP1517364B1 | European Patent Office (EPO) | B1 | |
| DE60239493D1 | Germany | D1 |
39 legal events, as 4 offices reported them to INPADOC
Over the term
Point at a mark for the eventEvents
| Event | Code | Office | |
|---|---|---|---|
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal feeWithdrawnR119 | R119 | DE | |
| Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP | PGFP | EP | |
| Change of applicant/patenteeR081 | R081 | DE | |
| Change of representativeR082 | R082 | DE | |
| Change of representativeR082 | R082 | DE | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25 | PG25 | EP | |
| No opposition filed against granted patent, or epo opposition proceedings concluded without decisionGrantedR097 | R097 | DE | |
| Notification of lapseLapsedST | ST | FR | |
| Gb: european patent ceased through non-payment of renewal feeCeasedGBPC | GBPC | EP | |
| No opposition filedOpposition26N | 26N | EP | |
| No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE | PLBE | EP | |
| Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA | STAA | EP | |
| Dpma publication of mentioned ep patent grantGrantedR096 | R096 | DE | |
| Corresponds to:REF | REF | EP | |
| Designated contracting statesAK | AK | EP | |
| European patent grantedGrantedFG4D | FG4D | GB | |
| (expected) grantORIGINAL CODE: 0009210GRAA | GRAA | EP | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | EP | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | EP | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | EP | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | EP | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | EP | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | EP | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | EP | |
| Information on inventor provided before grant (corrected)RIN1 | RIN1 | EP | |
| Grant fee paidORIGINAL CODE: EPIDOSNIGR3GRAS | GRAS | EP | |
| Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOSNIGR1GRAP | GRAP | EP | |
| Party data changed (applicant data changed or rights of an application transferred)RAP1 | RAP1 | EP | |
| Party data changed (applicant data changed or rights of an application transferred)RAP1 | RAP1 | EP | |
| First examination report despatched17Q | 17Q | EP | |
| Supplementary search report drawn up and despatchedA4 | A4 | EP | |
| Request for extension of the european patent (deleted)DAX | DAX | EP | |
| Designated contracting states (corrected)RBV | RBV | EP | |
| Request for examination filed17P | 17P | EP | |
| Designated contracting statesAK | AK | EP | |
| Request for extension of the european patentAX | AX | EP | |
| Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI | PUAI | EP |
Numbers
- Publication
- 1517364
- Application
- 27387802
Titles3
- German
- HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG
- English
- SEMICONDUCTOR DEVICE AND ITS PRODUCING METHOD
- French
- DISPOSITIF A SEMICONDUCTEUR, ET PROCEDE DE FABRICATION
Classification
- CPC, 9
- H10P14/47
- H10P74/277
- H10W42/121
- H10W72/019
- H10W72/01255
- H10W72/251
- H10W72/983
- H10W72/29
- H10W72/952
- IPC, 5
- H01L21 60
- H01L21 288
- H01L29 40
- H01L29 78
- H10W46 00
Designated states1
- Contracting states, 1
- United Kingdom
