EP1517332A4 - SEMICONDUCTOR MEMORY

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Every citation, both waysCites: the store holds 2 of 3

Citations
Document	Relation	Office	Category	Cited during	Relevant claims
US2002067648A1	Cites	United States of America	XA	Search report	1-7,9-12,14,25
US5301278A	Cites	United States of America	A	Search report	25
See also references of WO 2004001762A1	Non-patent	–	–	Search report	–

29 members in 7 offices

This recordMember, by publication datePriority claim

Priority claims9

Priority claims
Document	Office	Kind	Date
0206327	Japan	W	2002-06-25
0206327	Japan	W	2002-06-25
PCTJP0206327	World Intellectual Property Organization (WIPO)	–	2002-06-25
0301853	Japan	W	2003-02-20
0301853	Japan	W	2003-02-20
PCTJP0206327	–	–	–
JP2003001853	–	–	–
WO2002JP06327	–	–	–
WO2003JP01853	–	–	–

Members29

Family members, oldest first
Document	Office	Kind
WO2004001761A1	World Intellectual Property Organization (WIPO)	A1	2003-12-31
WO2004001762A1	World Intellectual Property Organization (WIPO)	A1	2003-12-31
KR20040106389A	Republic of Korea	A	2004-12-17
US2005052941A1	United States of America	A1	2005-03-10
EP1517332A1	European Patent Office (EPO)	A1	2005-03-23
CN1662996A	China	A	2005-08-31
EP1517332A4This record	European Patent Office (EPO)	A4	2005-09-14
JPWO2004001762A1	Japan	A1	2005-10-27
US2006023547A1	United States of America	A1	2006-02-02
EP1669999A1	European Patent Office (EPO)	A1	2006-06-14
KR20060067980A	Republic of Korea	A	2006-06-20
US7064998B2	United States of America	B2	2006-06-20
US7072243B2	United States of America	B2	2006-07-04
KR100615414B1	Republic of Korea	B1	2006-08-25
KR100649068B1	Republic of Korea	B1	2006-11-27
EP1517332B1	European Patent Office (EPO)	B1	2007-08-15
DE60315651D1	Germany	D1	2007-09-27
EP1669999B1	European Patent Office (EPO)	B1	2007-11-07
DE60315651T2	Germany	T2	2007-11-22
DE60317381D1	Germany	D1	2007-12-20
DE60317381T2	Germany	T2	2008-04-10
JP4119427B2	Japan	B2	2008-07-16
CN101261877A	China	A	2008-09-10
CN101452738A	China	A	2009-06-10
CN101452739A	China	A	2009-06-10
CN100520962C	China	C	2009-07-29
CN101261877B	China	B	2010-07-28
CN101452738B	China	B	2010-10-13
CN101452739B	China	B	2011-01-19

28 legal events, as 3 offices reported them to INPADOC

Over the term

Point at a mark for the event

Events

Legal events, newest first
	Event	Code	Office
2019-01-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2018-09-01	Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal feeWithdrawnR119	R119	DE
2017-04-28	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2015-06-18	Change of applicant/patenteeR081	R081	DE
2015-06-18	Change of representativeR082	R082	DE
2015-05-12	Change of representativeR082	R082	DE
2011-03-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2011-01-31	Lapsed in a contracting state [announced via postgrant information from national office to epo]LapsedPG25	PG25	EP
2010-11-19	Notification of lapseLapsedST	ST	FR
2009-10-30	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2009-08-31	Annual fee paid to national office [announced via postgrant information from national office to epo]GrantedPGFP	PGFP	EP
2009-05-29	Transmission of propertyTP	TP	FR
2008-07-23	No opposition filedOpposition26N	26N	EP
2008-06-20	No opposition filed within time limitOppositionORIGINAL CODE: 0009261PLBE	PLBE	EP
2008-06-20	Information on the status of an ep patent application or granted ep patentGrantedSTATUS: NO OPPOSITION FILED WITHIN TIME LIMITSTAA	STAA	EP
2007-12-14	Fr: translation filedET	ET	EP
2007-09-27	Corresponds to:REF	REF	EP
2007-08-15	Designated contracting statesAK	AK	EP
2007-07-13	(expected) grantORIGINAL CODE: 0009210GRAA	GRAA	EP
2007-07-06	Grant fee paidORIGINAL CODE: EPIDOSNIGR3GRAS	GRAS	EP
2007-03-02	Despatch of communication of intention to grant a patentORIGINAL CODE: EPIDOSNIGR1GRAP	GRAP	EP
2005-10-12	Designated contracting states (corrected)RBV	RBV	EP
2005-09-14	Supplementary search report drawn up and despatchedA4	A4	EP
2005-09-14	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2005-09-14	Information provided on ipc code assigned before grantRIC1	RIC1	EP
2005-03-23	Request for examination filed17P	17P	EP
2005-03-23	Designated contracting statesAK	AK	EP
2005-02-04	Public reference made under article 153(3) epc to a published international application that has entered the european phaseORIGINAL CODE: 0009012PUAI	PUAI	EP

Numbers

Publication: 1517332
Publication, DOCDB: 1517332
Publication, EPODOC: EP1517332
Application: 3705345
Application, DOCDB: 03705345
Application, EPODOC: EP20030705345

Titles3

German: HALBLEITERSPEICHER
English: SEMICONDUCTOR MEMORY
French: MEMOIRE A SEMICONDUCTEURS

Classification

CPC, 14: G11C11/406
G11C11/40603
G11C7/22
G11C11/401
G11C11/40615
G11C11/4076
G11C29/02
G11C29/022
G11C29/028
G11C29/50012
G11C2207/2281
G11C2211/4061
G11C11/4072
G11C11/4096
Filled: the office’s first classification
IPC, 3: G11C7 22
G11C11 406
G11C11 4076

Designated states1

Contracting states, 1: Türkiye

Semiconductor memory

Abstract

Term